Fiber-based organic phototransistor and preparation method and application thereof
CN115802772BActive Publication Date: 2026-03-20WUHAN TEXTILE UNIV
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-11-17
- Publication Date
- 2026-03-20
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Figure CN115802772B_ABST
Abstract
The application provides a fiber-based organic photoelectric transistor and a preparation method and application thereof, a fiber substrate is compounded with a conductive polymer and a nano conductive material to obtain a conductive polymer fiber, which is used as a source-drain electrode of a flexible photoelectric transistor; the conductive polymer fiber is further adsorbed with a tungsten disulfide quantum dot to be used as a gate electrode; and the source-drain electrode and the gate electrode are assembled with a gel electrolyte to obtain the fiber-based organic photoelectric transistor. The application utilizes a synergistic effect between the conductive polymer and the nano conductive material to improve the composite performance of the material, and utilizes a synergistic control effect of graphene on the adsorption of the tungsten disulfide quantum dot to improve the photosensitive performance and light absorption of the material, so that a flexible photoelectric detector with excellent comprehensive performance is finally obtained. The flexible fiber-based organic photoelectric transistor has the advantages of simple preparation process, good flexibility, small toxicity, good repeatability and suitability for industrialized batch production, and can be applied to various wearable photoelectric detector fields.
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Citation Information
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