A magnonic spin torque device, a storage structure and an electronic device

Abstract

A magnonic spin torque device, a storage structure and an electronic device, the magnonic spin torque device comprises: a substrate, a spin source layer arranged on the substrate, a magnonic transport layer arranged on the side of the spin source layer away from the substrate, and a magnetic structure layer arranged on the side of the magnonic transport layer away from the substrate, wherein the magnonic transport layer comprises a multiferroic antiferromagnetic material. The scheme provided by the embodiment can realize the control of the magnonic spin torque through the electric field by using the multiferroic antiferromagnetic material as the magnonic transport layer. Compared with the scheme of using a non-multiferroic antiferromagnetic material as the magnonic transport layer, the electric field is adjustable, the transmission distance is farther, the loss is smaller, and the energy consumption is low.

Description

Technical Field

[0001] This disclosure relates to, but is not limited to, magnetic storage technology, and particularly to a magnetic spin torque device, storage structure, and electronic device. Background Technology

[0002] Magnetic random access memory (MRAM) is becoming the mainstream memory due to its advantages such as non-volatility, high persistence, and low power consumption. Spin-transfer torque (STT) was discovered in the early 1990s. STT-MRAM technology has become a mature embedded technology in recent years, with major manufacturers announcing mass production of embedded STT-MRAM. However, STT-MRAM suffers from latency and reliability issues, making it unsuitable as a replacement for L1 / L2 cache static random-access memory (SRAM). Spin-orbit torque–MARAM (SOT-MRAM), with its sub-nanosecond switching speed and better endurance, has become a potential candidate for STT-MRAM. However, the three-terminal configuration of SOT-MRAM requires at least two transistors to operate, significantly limiting integration density. Another challenge of SOT-MRAM is its high switching current, which adversely affects its reliability and bit cell area. Subsequently, researchers proposed voltage-controlled multi-bit and SOT shared write channels. However, the scalability and efficiency of this scheme are limited by the retention of the low-plane magnetic tunnel junction (MTJ) and the low-speed gate modulation. Summary of the Invention

[0003] The following is an overview of the subject matter described in detail herein. This overview is not intended to limit the scope of the claims.

[0004] This disclosure provides a magnetic spin torque device, a storage structure, and an electronic device.

[0005] This disclosure provides a magnetic spin torque device, comprising:

[0006] The substrate, a spin source layer disposed on the substrate, a magneton transport layer disposed on the side of the spin source layer away from the substrate, and a magnetic structure layer disposed on the side of the magneton transport layer away from the substrate, wherein the magneton transport layer comprises a multiferroic antiferromagnetic material.

[0007] In an exemplary embodiment, the multiferroic antiferromagnetic material includes at least one of the following: bismuth ferrite, lanthanum bismuth ferrite, terbium manganate, calcium manganate, lutetium manganate, and barium strontium manganate.

[0008] In one exemplary embodiment, the thickness of the magneton transport layer is 2 to 1000 nanometers along a direction perpendicular to the substrate.

[0009] In an exemplary embodiment, the material of the spin source layer includes at least one of the following: platinum, tantalum, tungsten, tin, platinum-manganese alloy, tungsten ditelluride, bismuth-antimony alloy, iridium-manganese alloy, iridium dioxide, strontium ruthenium oxide, and strontium iridium oxide.

[0010] In one exemplary embodiment, the magnetic structure layer includes one or more vertically magnetically anisotropic thin films.

[0011] In one exemplary embodiment, the material of the magnetic structure layer includes at least one of the following: cobalt, cobalt iron boron, iron telluride, lanthanum strontium manganese oxide, platinum cobalt monolayer, and platinum cobalt multilayer.

[0012] In an exemplary embodiment, the magnetic spin torque device further includes an electrode disposed on the side of the magnetic structure layer away from the substrate, wherein the orthographic projection of the electrode overlaps with the orthographic projection of the magnetic transport layer on a plane parallel to the substrate.

[0013] This disclosure discloses a storage structure comprising: a substrate, a spin source layer disposed on the substrate, a magnetic transport layer disposed on the side of the spin source layer away from the substrate, at least one magnetic recording unit disposed on the side of the magnetic transport layer away from the substrate, and an electrode disposed on the side of the magnetic recording unit away from the substrate. On a plane parallel to the substrate, the orthographic projection of the electrode overlaps with the orthographic projection of the magnetic transport layer. The magnetic transport layer comprises a multiferroic antiferromagnetic material.

[0014] In one exemplary embodiment, the electrodes correspond one-to-one with the magnetic recording units.

[0015] In an exemplary embodiment, the multiferroic antiferromagnetic material includes at least one of the following: bismuth ferrite, lanthanum bismuth ferrite, terbium manganate, calcium manganate, lutetium manganate, and barium strontium manganate.

[0016] In one exemplary embodiment, the thickness of the magneton transport layer is 2 to 1000 nanometers along a direction perpendicular to the substrate.

[0017] In an exemplary embodiment, the material of the spin source layer includes at least one of the following: platinum, tantalum, tungsten, tin, platinum-manganese alloy, tungsten ditelluride, bismuth-antimony alloy, iridium-manganese alloy, iridium dioxide, strontium ruthenium oxide, and strontium iridium oxide.

[0018] In an exemplary embodiment, the magnetic recording unit includes: a free layer, a barrier layer, and a fixed layer sequentially disposed on the side of the magnetic transport layer away from the substrate, wherein the free layer and the fixed layer are perpendicular to magnetic anisotropy.

[0019] This disclosure provides an electronic device including the storage structure described in any of the above embodiments.

[0020] In an exemplary embodiment, the electronic device further includes: a first switching unit corresponding to the magnetic recording unit, and a second switching unit, wherein the first switching unit is connected to a first bit line terminal, a second bit line terminal, and the electrode of the corresponding magnetic recording unit, respectively; and the second switching unit is connected to a third bit line terminal, a first word line terminal, and one end of the spin source layer; wherein,

[0021] The first switching unit is configured to provide a signal from the second bit line terminal to the electrode under the control of the first bit line terminal;

[0022] The second switching unit is configured to provide the signal of the third bit line terminal to the spin source layer under the control of the first word line terminal.

[0023] This disclosure includes a magnetic spin torque device and its storage structure, as well as an electronic device. The magnetic spin torque device comprises: a substrate, a spin source layer disposed on the substrate, a magnetic spin transport layer disposed on the side of the spin source layer away from the substrate, and a magnetic structure layer disposed on the side of the magnetic spin transport layer away from the substrate. The magnetic spin transport layer comprises a multiferroic antiferromagnetic material. The solution provided in this embodiment, using a multiferroic antiferromagnetic material as the magnetic spin transport layer, allows for control of the magnetic spin torque via an electric field. Compared to solutions using non-multiferroic antiferromagnetic materials as the magnetic spin transport layer, the electric field is adjustable, the transmission distance is longer, the loss is lower, and the energy consumption is lower.

[0024] Other features and advantages of the invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and advantages of the invention may be realized and obtained by means of the structures particularly pointed out in the description and the drawings.

[0025] After reading and understanding the accompanying diagrams and detailed descriptions, other aspects can be understood. Attached Figure Description

[0026] The accompanying drawings are provided to further understand the technical solutions of this disclosure and constitute a part of the specification. They are used together with the embodiments of this disclosure to explain the technical solutions of the present invention and do not constitute a limitation on the technical solutions.

[0027] Figure 1 A schematic diagram of a magnetic spin torque device provided as an exemplary embodiment;

[0028] Figure 2 A schematic diagram of a magnetic spin torque device provided for another exemplary embodiment;

[0029] Figure 3 A schematic diagram of a magnetic spin torque device provided as yet another exemplary embodiment;

[0030] Figure 4 A schematic diagram of a magnetization switch measuring device based on magnetic spin torque, an anomalous Hall resistance diagram, and a hysteresis loop diagram under different auxiliary magnetic fields are provided as an exemplary embodiment.

[0031] Figure 5 A schematic diagram of a storage structure provided for an exemplary implementation;

[0032] Figure 6 A schematic diagram illustrating the state changes of a storage structure as provided in an exemplary embodiment;

[0033] Figure 7 A schematic diagram of an electronic device provided as an exemplary embodiment;

[0034] Figure 8 A flowchart of a storage structure control method provided for an exemplary embodiment. Detailed Implementation

[0035] The embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. Unless otherwise specified, the embodiments of this disclosure and the features thereof can be combined arbitrarily with each other.

[0036] The steps illustrated in the flowchart in the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions. Furthermore, although a logical order is shown in the flowchart, in some cases the steps shown or described may be performed in a different order than that presented here.

[0037] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention pertains.

[0038] In the accompanying drawings, the size of the constituent elements, the thickness of the layers, or the area are sometimes exaggerated for clarity. Therefore, embodiments of this disclosure are not necessarily limited to these dimensions, and the shapes and sizes of the components in the drawings do not reflect true proportions. Furthermore, the drawings schematically illustrate ideal examples, and embodiments of this disclosure are not limited to the shapes or values ​​shown in the drawings.

[0039] The ordinal numbers “first,” “second,” “third,” etc., used in this disclosure are provided to avoid confusion among the constituent elements and do not indicate any order, quantity, or importance.

[0040] In this disclosure, for convenience, terms such as "middle," "upper," "lower," "front," "rear," "vertical," "horizontal," "top," "bottom," "inner," and "outer" are used to indicate orientation or positional relationships in conjunction with the accompanying drawings. This is solely for the purpose of facilitating the description and simplification of the specification, and does not imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation of this disclosure. The positional relationships of the constituent elements may be appropriately varied depending on the direction in which each constituent element is described. Therefore, the disclosure is not limited to the terms used herein and may be appropriately replaced as appropriate.

[0041] In this disclosure, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linkage" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; a mechanical connection or an electrical connection; a direct connection, an indirect connection via an intermediate component, or a connection within two components. Those skilled in the art can understand the specific meaning of these terms in this disclosure according to the specific circumstances.

[0042] In this disclosure, a transistor is a device that includes at least three terminals: a gate electrode, a drain electrode, and a source electrode. A transistor has a channel region between the drain electrode (drain electrode terminal, drain region, or drain electrode) and the source electrode (source electrode terminal, source region, or source electrode), and current can flow through the drain electrode, the channel region, and the source electrode. In this disclosure, the channel region refers to the region through which current primarily flows.

[0043] In this disclosure, the first electrode can be the drain electrode and the second electrode can be the source electrode, or vice versa. In cases where transistors with opposite polarities are used or where the current direction changes during circuit operation, the functions of the "source electrode" and "drain electrode" are sometimes interchanged. Therefore, in this disclosure, the "source electrode" and "drain electrode" can be interchanged.

[0044] In this disclosure, "electrical connection" includes the situation where constituent elements are connected together by a component having a certain electrical function. There are no particular limitations on the "component having a certain electrical function," as long as it enables the transmission and reception of electrical signals between the connected constituent elements. Examples of "component having a certain electrical function" include not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other components with various functions.

[0045] In this disclosure, "parallel" refers to a state in which the angle formed by two straight lines is greater than or equal to -10° and less than 10°, and therefore also includes a state in which the angle is greater than or equal to -5° and less than 5°. In addition, "perpendicular" refers to a state in which the angle formed by two straight lines is greater than or equal to 80° and less than 100°, and therefore also includes a state in which the angle is greater than or equal to 85° and less than 95°.

[0046] The statement in this disclosure that "the orthographic projection of B is within the range of the orthographic projection of A" means that the boundary of the orthographic projection of B falls within the boundary range of the orthographic projection of A, or that the boundary of the orthographic projection of A overlaps with the boundary of the orthographic projection of B.

[0047] Magnonics aims to utilize spin waves for information processing. In recent years, the field of magnonics research has rapidly emerged, becoming a new avenue for developing innovative information and communication technology devices based on beyond-complementary metal-oxide-semiconductor (BMOS) technology. Spin waves, the collective excitation of electron spin systems (their quantum magnetons) in magnetic materials, offer several advantages for data processing, including:

[0048] (1) Spin waves provide information transmission without Joule heat, which offers a good prospect for achieving low power consumption.

[0049] (2) Since spin waves are several orders of magnitude shorter than light of the same frequency, and the magnetic spectrum covers a fairly wide frequency range (GHz to THz), they have broad prospects for device miniaturization and high-speed technology development.

[0050] (3) Spin wave phase provides additional degrees of freedom, enabling advanced analog computing. Although magneton devices have shown potential for developing innovative computing devices, there are still some challenges in realizing more advanced magneton devices or even entire circuits.

[0051] Due to the high-density stacking of devices in integrated circuits, the Joule heat generated by individual micro-devices increases significant energy loss, raises device temperature, and thus degrades device performance. A better alternative is to use magnetic torque from an antiferromagnetic (AFM) insulator to control local magnetization, where the magnetic current is absorbed by the ferromagnetic layer; therefore, the magnetic torque modulates the magnetization of the ferromagnetic layer. This principle allows for the design of multiferro-antiferromagnetic magneto-based memory devices. Magneto-based memory devices will possess non-volatile, low write power consumption characteristics. Furthermore, by using multiferro-antiferromagnetic magneto transport channels as spin transistors, multiple MTJs can be combined on the same SOT orbital to achieve higher architecture density. Multiferro-antiferromagnetic magneto transport channels as spin transistors offer advantages such as high on / off ratio and high selectivity for spin (or magnetic) currents.

[0052] Multiferroic and antiferromagnetic materials, such as bismuth ferrite (BiFeO3, BFO), are room-temperature magnetoelectric coupling materials with large ferroelectric polarization and G-type antiferromagnetic magnetic order. They are expected to serve as magneton transport media. Furthermore, the magneton transport properties can be changed by modulating the ferroelectric polarization with an electric field, and they may then be used to design spin (wave) field-effect transistors.

[0053] Figure 1 A schematic diagram of a magnetic spin torque device provided as an exemplary embodiment. Figure 1 As shown, the magnetic spin torque device provided in this embodiment includes: a substrate 1, a spin source layer 2 disposed on the substrate 1, a magnetic transport layer 3 disposed on the side of the spin source layer 2 away from the substrate 1, and a magnetic structure layer 4 disposed on the side of the magnetic transport layer 3 away from the substrate 1, wherein the magnetic transport layer 3 includes a multiferroic antiferromagnetic material.

[0054] The multiferromagnetic and antiferromagnetic materials are materials that possess both ferroelectric and antiferromagnetic properties. Ferroelectric materials are those that exhibit an inherent electric dipole moment without an external electric field; antiferromagnetic materials are those whose magnetic moments are arranged in an orderly manner within a certain temperature range but do not exhibit a macroscopically strong magnetic moment.

[0055] The magnetic spin torque device provided in this embodiment, when a current is applied to the spin source layer 2, generates spin polarization accumulation at the interface between the spin source layer 2 and the magnetic spin transport layer 3 through the spin Hall effect (or Rashba-Edelstein effect, or orbital Hall effect), thereby generating a magnetic current in the magnetic spin transport layer 3. The induced magnetic current generates a magnetic spin torque in the magnetic structure layer 4. The magnetic spin transport layer 3 is a multiferroic antiferromagnetic material. Multiferroic antiferromagnetic materials have strong magnetoelectric coupling effects, exhibiting ferroelectricity and antiferromagnetism. Their polarization direction can be changed by an electric field (correspondingly controlling the magnetic structure), and the magnetic current in the magnetic spin transport layer 3 changes accordingly. The magnitude and direction of the magnetic spin torque generated in the magnetic structure layer 4 change accordingly. Therefore, the magnitude and direction of the magnetic spin torque in the magnetic structure layer 4 can be controlled by controlling the electric field applied to the magnetic spin transport layer 3.

[0056] The solution provided in this embodiment uses a multiferroic antiferromagnetic material as the magneton transport layer, which can control the magneton spin torque through an electric field. Compared with the solution using a non-multiferroic antiferromagnetic material as the magneton transport layer, the electric field is adjustable, the transmission distance is longer, the loss is smaller, and the energy consumption is lower. Compared with the technology based on the reversal of local magnetism by electron spin orbital moments, the technology based on the reversal of magnetic moments by magneton spin torque can significantly reduce the energy dissipation related to electron motion and generate less heat. Moreover, the transmission speed is longer. The electron spin diffusion length is usually only a few nanometers, while the transmission length of magnetons is several micrometers or even millimeters.

[0057] In an exemplary embodiment, the material of the substrate 1 includes, but is not limited to, at least one of the following: silicon single crystal, silicon carbide, sapphire, gadolinium gallium garnet, gallium arsenide, diamond, aluminum nitride or strontium gallium nitride titanate (SrTiO3, STO), dysprosium scandate (DyScO3, DSO), terbium scandate (TbScO3, TSO), gadolinium scandate (GdScO3, GSO), samarium scandate (SmScO3, SSO), etc.

[0058] In an exemplary embodiment, the multiferroic antiferromagnetic material may include, but is not limited to, at least one of the following: bismuth ferrite (BiFeO3, BFO), lanthanum bismuth ferrite (LaBiFeO3, LBFO), terbium manganate (TbMnO3), calcium manganate (CaMn2O7), lutetium manganate (LuMnO3), and barium strontium manganate ((SrBa)MnO3).

[0059] In one exemplary embodiment, the thickness of the magnetic spin torque layer 3 along a direction perpendicular to the substrate 1 can be 2 to 1000 nanometers. It can be seen that the magnetic spin torque device provided in this embodiment can support long transmission distances.

[0060] In an exemplary embodiment, the material of the spin source layer 2 may be a material with a spin Hall angle greater than a preset value, including but not limited to platinum (Pt), tantalum (Ta), tungsten (W), tin (Sn), platinum-manganese alloy (PtMn), tungsten distellide (WTe2), and bismuth-antimony alloy (Bi). x Sb 1-x Examples of iridium-manganese alloys include IrMn, iridium dioxide (IrO2), strontium ruthenium oxide (SrRuO3, SRO), and strontium iridium oxide (SrIrO3, abbreviated as SIO, or Sr2Ir2O4).

[0061] In one exemplary embodiment, the thickness of the spin source layer 2 along a direction perpendicular to the substrate 1 can be from a few nanometers to several hundred nanometers.

[0062] In one exemplary embodiment, the magnetic structure layer 4 may include one or more perpendicular magnetic anisotropy (PMA) thin films. The solution provided in this embodiment, compared to using in-plane anisotropic magnetic materials, is advantageous for reducing size during integration.

[0063] In one exemplary embodiment, the material of the magnetic structure layer 4 includes, but is not limited to, at least one of the following: cobalt (Co), cobalt iron boron (CoFeB), iron telluride (FeTe), lanthanum strontium manganese oxide (LSMO), platinum cobalt (PtCo) monolayer and PtCo multilayer.

[0064] In an exemplary embodiment, the magnetic structure layer 4 may include a magnetic tunnel junction or giant magnetoresistive (GMR) layer. The magnetic tunnel junction or GMR layer may include a first ferromagnetic layer, a non-magnetic insulating layer (e.g., a ferroelectric layer), and a second ferromagnetic layer arranged sequentially. The magnetic tunnel junction includes, but is not limited to, a structure composed of CoFeB / magnesium oxide (MgO) / CoFeB, i.e., the first and second ferromagnetic layers are CoFeB, and the non-magnetic insulating layer is MgO. The giant magnetoresistive layer comprises a magnetic thin film structure formed by alternating layers of ferromagnetic and non-ferromagnetic materials, which produces the GMR effect. The GMR effect is a quantum mechanical effect; when the magnetic moments of the first and second ferromagnetic layers are parallel, spin-related scattering of charge carriers is minimized, and the giant magnetoresistive layer achieves its minimum resistance; when the magnetic moments of the first and second ferromagnetic layers are antiparallel, spin-related scattering is strongest, and the giant magnetoresistive layer has its maximum resistance.

[0065] In an exemplary embodiment, the spin source layer 2 is, for example, an SRO, and the magneton transport layer 3 is, for example, a BFO.

[0066] In one exemplary embodiment, such as Figure 2 As shown, the magnetic spin torque device may further include: an electrode 5 disposed on the side of the magnetic structure layer 4 away from the substrate 1, wherein the orthographic projection of the electrode 5 overlaps with the orthographic projection of the magnetic transport layer 3 on a plane parallel to the substrate 1. The electrode 5 can be connected to a first voltage terminal, and the spin source layer 2 can be connected to a second voltage terminal, creating an electric field between the electrode 5 and the spin source layer 2. Since the magnetic transport layer 3 is a multiferroic antiferromagnetic material, its polarization direction can be changed by the electric field. Due to the magnetoelectric coupling effect, the magnetic structure changes with the polarization direction, thereby altering the magnetic transport characteristics of the magnetic transport layer 3 and correspondingly controlling the magnetic spin torque of the magnetic structure layer 4. In short, the electric field controllability of the magnetic spin torque is achieved by controlling the magnetic transport channel through an electric field.

[0067] In the previous embodiment, the spin source layer 2 is reused as a bottom electrode, forming an electric field between it and the electrode 5 (which may be referred to as the top electrode). In another exemplary embodiment, the spin source layer 2 may not be reused as a bottom electrode, and a bottom electrode may be disposed between the substrate 1 and the spin source layer 2, forming an electric field between the bottom electrode and the electrode 5 to control the polarization direction of the magnetic particle transport layer 3.

[0068] In one exemplary embodiment, such as Figure 3As shown, the magnetic spin torque device may include a substrate 1, a spin source layer 2 disposed on the substrate 1, and a plurality of magnetic transport layers 3 and a plurality of magnetic structure layers 4 sequentially disposed on the side of the spin source layer 2 away from the substrate 1. The magnetic transport layers 3 and the magnetic structure layers 4 can correspond one-to-one. On a plane parallel to the substrate 1, the orthographic projection of the magnetic transport layer 3 overlaps with the orthographic projection of the corresponding magnetic structure layer 4, the orthographic projection of the magnetic transport layer 3 overlaps with the orthographic projection of the spin source layer 2, and the orthographic projection of the magnetic structure layer 4 overlaps with the orthographic projection of the spin source layer 2. When a current is applied to the spin source layer 2, the current accumulates spin polarization at the interface between the spin source layer 2 and the plurality of magnetic transport layers 3 through the spin Hall effect, thereby generating a magnetic current in the plurality of magnetic transport layers 3. The effect of the induced magnetic current generates magnetic spin torque in the plurality of magnetic structure layers 4. In this embodiment, multiple magneton transport layers 3 and multiple magnetic structure layers 4 can be disposed on a spin source layer 2. Applying a pulse current to the spin source layer 2 can achieve the flipping of multiple magnetic structure layers 4.

[0069] Figure 4 This is a schematic diagram of a magneton spin torque device as a magnetization switch measurement device, provided as an exemplary embodiment. Figure 4 As shown in Figure a, the magnetization switch measurement device includes a substrate 1 ( Figure 4 (Not shown in the image) A spin source layer 2 disposed on a substrate 1, a magnetic transport layer 3 disposed on the side of the spin source layer 2 away from the substrate 1, and a magnetic structure layer 4 disposed on the side of the magnetic transport layer 3 away from the substrate 1. The substrate 1 is, for example, DSO, the spin source layer 2 is, for example, SRO, the magnetic transport layer 3 is, for example, BFO, and the magnetic structure layer 4 is a perpendicular magnetic anisotropy (PMA) thin film, such as PtCo. Figure 4 In the middle of a, I pulse It is a pulse current, H ext It is an external auxiliary magnetic field, its direction is along the direction of the current, M is the magnetic moment, and the arrow indicates the direction of the magnetic moment. Figure 4 In the figure, b represents the anomalous Hall resistance Rxy in the PtCo / BFO / SRO heterostructure measured at room temperature under external magnetic field sweep conditions (e.g., the applied magnetic field Hz gradually changes from -30mT to 30mT). Figure 4 In the figure, c represents the hysteresis loop measured when the auxiliary magnetic field Hx, which is in the same direction as the current applied to SRO, is +10 millitalas (mT). Figure 4 In the diagram, d represents the measured hysteresis loop when the applied auxiliary magnetic field Hx is -10mT and opposite to the current applied to the SRO. It can be seen that... Figure 4 Compared to the inverted loop shown in c, Figure 4The polarity of the reversal loop shown in Figure d changes, meaning that the magnetic torque can cause the magnetization of the perpendicular magnetic anisotropy layer (magnetic structure layer 4) to reverse. The working principle of this magnetic spin torque reversal based on multiferroic and antiferromagnetic materials is as follows: the magnetic torque of the magnetic transport layer 3 controls local magnetization; the magnetic current generated by the magnetic transport layer 3 is absorbed by the magnetic structure layer 4; therefore, the magnetic torque will adjust the magnetization of the ferromagnetic layer in the magnetic structure layer 4. When the torque transmitted by the spin source layer 2 is sufficiently large, the magnetization reverses.

[0070] Figure 5 This is a schematic diagram of a storage structure provided for an exemplary embodiment. For example... Figure 5 As shown, this embodiment provides a storage structure, including: a substrate 1, a spin source layer 2 disposed on the substrate 1, a magnetic transport layer 3 disposed on the side of the spin source layer 2 away from the substrate 1, at least one magnetic recording unit 6 disposed on the side of the magnetic transport layer 3 away from the substrate 1, and an electrode 5 disposed on the side of the magnetic recording unit 6 away from the substrate 1. On a plane parallel to the substrate 1, the orthographic projection of the electrode 6 overlaps with the orthographic projection of the magnetic transport layer 3, wherein the magnetic transport layer 3 comprises a multiferroic antiferromagnetic material.

[0071] The magnetic recording unit 6 can exhibit different states, representing 0 and 1 respectively, thereby achieving storage. The state of the magnetic recording unit 6 can be changed by the magnetic flux of the magnetic transport layer 3.

[0072] The storage structure provided in this embodiment is a magnetics memory device, which has the advantages of non-volatility and low write power consumption. In addition, when there are multiple magnetic recording units, the magnetic transport layer can be controlled independently by the voltage applied to the electrodes, which has the advantages of high on / off ratio and high selectivity.

[0073] The electrode 5 can be connected to the first voltage terminal V. G One end of the spin source layer 2 can be connected to the second voltage terminal VSS, which may be, for example, a ground terminal.

[0074] In an exemplary embodiment, the material of the substrate 1 includes, but is not limited to, at least one of the following: strontium titanate (SrTiO3, STO), dysprosium scandate (DyScO3, DSO), terbium scandate (TbScO3, TSO), gadolinium scandate (GdScO3, GSO), samarium scandate (SmScO3, SSO), etc.

[0075] In one exemplary embodiment, the electrode 5 may correspond one-to-one with the magnetic recording unit 6. However, the embodiments disclosed herein are not limited to this, and one electrode 5 may correspond to multiple magnetic recording units 6.

[0076] In an exemplary embodiment, the multiferroic antiferromagnetic material includes at least one of the following: bismuth ferrite, lanthanum bismuth ferrite, terbium manganate (TbMnO3), calcium manganate (CaMn2O7), lutetium manganate (LuMnO3), and barium strontium manganate ((SrBa)MnO3).

[0077] In one exemplary embodiment, the thickness of the magnetic transport layer 3 can be 2 to 1000 nanometers along a direction perpendicular to the substrate.

[0078] In an exemplary embodiment, the material of the spin source layer 2 may include, but is not limited to, at least one of the following: strontium ruthenium oxide or strontium iridium oxide.

[0079] In an exemplary embodiment, the magnetic recording unit 6 may include: a free layer 61, a barrier layer 62, and a fixed layer 63 sequentially disposed on the side of the magnetic transmission layer 3 away from the substrate 1.

[0080] In one exemplary embodiment, when the magnetic moment direction of the fixed layer 63 is antiparallel to the magnetic moment direction of the free layer 61, it is in a high-resistivity state, corresponding to "1" in binary; when the magnetic moment direction of the fixed layer 63 is parallel to the magnetic moment direction of the free layer 61, it is in a low-resistivity state, corresponding to "0" in binary. However, this embodiment is not limited to this; the low-resistivity state may correspond to "1" in binary, the high-resistivity state to "0" in binary, and so on. The magnetic moment direction of the fixed layer 63 is fixed, while the magnetic moment direction of the free layer 61 can be changed by the magnetic flux of the magnetic particle transport layer 3, thereby changing the state of the magnetic recording unit 6.

[0081] In an exemplary embodiment, the free layer 61 and the fixed layer 63 are perpendicular to magnetic anisotropy. Compared with in-plane magnetic anisotropy solutions, the solution provided in this embodiment can reduce size and facilitate integration.

[0082] Figure 5 Only two magnetic recording units 6 are shown in the illustration, but the embodiments disclosed herein are not limited thereto. The storage structure may include more or fewer magnetic recording units 6, and multiple MTJs may be combined on the same SOT track to achieve the required architecture density.

[0083] The following example illustrates how a storage structure works.

[0084] like Figure 6 As shown, in this embodiment, the storage structure may include two magnetic recording units, and the voltage applied to the electrodes on the first magnetic recording unit is a first voltage V. G1 The voltage applied to the electrodes on the second magnetic recording unit is the second voltage V. G2 One end of the spin source layer 2 can be connected to a current source, and the other end can be grounded.

[0085] Taking the first magnetic recording unit as an example, when V G1 When the voltage is less than the preset voltage threshold V0, the first channel in the magnetic transmission layer 3 corresponding to the first magnetic recording unit is in the on state (√); while when V G1 When the voltage is greater than or equal to a preset voltage threshold V0, the first channel in the magnetic transport layer 3 corresponding to the first magnetic recording unit is in a closed state (×). Specifically, when the first channel in the magnetic transport layer 3 corresponding to the first magnetic recording unit is in an open state, after a write current is applied to the spin source layer 2, the magnetic wave current in the magnetic transport layer 3 can change the magnetic moment direction of the free layer 61 of the first magnetic recording unit; when the first channel in the magnetic transport layer 3 corresponding to the first magnetic recording unit is in a closed state, after a write current is applied to the spin source layer 2, the magnetic wave current in the magnetic transport layer 3 does not change the magnetic moment direction of the free layer 61 of the first magnetic recording unit. The second magnetic recording unit is similar and will not be described further. By selectively controlling the first voltage V... G1 Second voltage V G2 By applying a write current, the storage state of the memory structure can be arbitrarily rewritten to "11", "00", "01" or "10".

[0086] The preset voltage threshold V0 of different magnetic recording units can be the same or different. In the following embodiments, the example is that the preset voltage threshold V0 of different magnetic recording units is the same, but the embodiments of this disclosure are not limited thereto, and the preset voltage threshold V0 of different magnetic recording units can be different.

[0087] The explanation uses an initial storage state of "11" as an example. The initial storage state of "11" is merely an example; other states are possible. This is achieved by changing the first voltage V. G1 Second voltage V G2 The storage state of the storage structure can change from "11" to "00" (see reference). Figure 6 (from a to b1 to b2), or, change from "11" to "01" (see reference). Figure 6 (from a to c1 to c2), or, change from "11" to "10" (see reference). Figure 6 (from a to d1 to d2).

[0088] like Figure 6 As shown in Figure a, the initial state is "11", that is, the state of the first magnetic recording unit is "1" and the state of the second magnetic recording unit is "1"; the magnetic moment directions of the free layer 61 and the fixed layer 63 of the first magnetic recording unit are arranged in antiparallel directions; the magnetic moment directions of the free layer 61 and the fixed layer 63 of the second magnetic recording unit are arranged in antiparallel directions.

[0089] like Figure 6 As shown in b1, the control makes the first voltage V G1<V0, the first channel in the magnon transport layer 3 corresponding to the first magnetic recording unit is in an on state, and the second voltage V G2 <V0, the second channel in the magnon transport layer 3 corresponding to the second magnetic recording unit is in an on state;

[0090] As shown in Figure 6 in b2, after a write current is applied to the spin source layer 2, since the first channel is in the on state, the magnon current in the magnon transport layer 3 changes the magnetization direction of the free layer 61 of the first magnetic recording unit, so that the magnetization direction of the free layer 61 of the first magnetic recording unit is flipped, the magnetization direction of the free layer 61 of the first magnetic recording unit is arranged in parallel with the magnetization direction of the fixed layer 63, and the state of the first magnetic recording unit is "0"; after a write current is applied to the spin source layer 2, since the second channel is in the on state, the magnon current in the magnon transport layer 3 changes the magnetization direction of the free layer 61 of the second magnetic recording unit, so that the magnetization direction of the free layer 61 of the second magnetic recording unit is flipped, the magnetization direction of the free layer 61 of the second magnetic recording unit is arranged in parallel with the magnetization direction of the fixed layer 63, and the state of the second magnetic recording unit is "0"; that is, the state of the storage structure becomes "00".

[0091] As shown in Figure 6 in c1, the control makes the first voltage V G1 <V0, the first channel in the magnon transport layer 3 corresponding to the first magnetic recording unit is in an on state, and the second voltage V G2 >V0, the second channel in the magnon transport layer 3 corresponding to the second magnetic recording unit is in an off state;

[0092] As shown in Figure 6 in c2, after a write current is applied to the spin source layer 2, since the first channel is in the on state, the magnon current in the magnon transport layer 3 changes the magnetization direction of the free layer 61 of the first magnetic recording unit, so that the magnetization direction of the free layer 61 of the first magnetic recording unit is flipped, the magnetization direction of the free layer 61 of the first magnetic recording unit is arranged in parallel with the magnetization direction of the fixed layer 63, and the state of the first magnetic recording unit is "0"; after a write current is applied to the spin source layer 2, since the second channel is in the off state, the magnon current in the magnon transport layer 3 does not change the magnetization direction of the free layer 61 of the second magnetic recording unit, the magnetization direction of the free layer 61 of the second magnetic recording unit and the magnetization direction of the fixed layer 63 remain arranged antiparallel, and the state of the second magnetic recording unit is "1"; that is, the state of the storage structure becomes "01".

[0093] As shown in Figure 6 in d1, the control makes the first voltage V G1 >V0, the first channel in the magnon transport layer 3 corresponding to the first magnetic recording unit is in an off state, and the second voltage V G2<V0, the second channel in the magnon transmission layer 3 corresponding to the second magnetic recording unit is in an on state;

[0094] As shown in Figure 6 d2, after a write current is applied to the spin source layer 2, since the first channel is in an off state, the magnon flow in the magnon transmission layer 3 does not change the magnetization direction of the free layer 61 of the first magnetic recording unit, the magnetization direction of the free layer 61 of the first magnetic recording unit and the magnetization direction of the pinned layer 63 remain antiparallel, and the state of the first magnetic recording unit remains "1"; after a write current is applied to the spin source layer 2, since the second channel is in an on state, the magnon flow in the magnon transmission layer 3 changes the magnetization direction of the free layer 61 of the second magnetic recording unit, so that the magnetization direction of the free layer 61 of the second magnetic recording unit is flipped, the magnetization direction of the free layer 61 of the second magnetic recording unit and the magnetization direction of the pinned layer 63 are arranged in parallel, and the state of the second magnetic recording unit is "0"; that is, the state of the storage structure becomes "10".

[0095] Embodiments of the present disclosure further provide an electronic device, including the storage structure according to the foregoing embodiments. The electronic device may be a storage apparatus, a smart phone, a computer, a tablet computer, an artificial intelligence device, a wearable device, a mobile power supply, or the like. The storage apparatus may include a memory in a computer, which is not limited herein.

[0096] In an exemplary embodiment, the storage structure may be controlled through an external bit line and an external word line.

[0097] In an exemplary embodiment, as shown in Figure 7 , the electronic device may further include: a first switching unit 71 and a second switching unit 72 corresponding to the magnetic recording unit, the first switching unit 71 is connected to the first bit line terminal BL1, the second bit line terminal BL2 and the electrode 5 of the corresponding magnetic recording unit respectively; the second switching unit 72 is connected to the third bit line terminal BL3, the first word line terminal WL and one end of the spin source layer 2; wherein

[0098] The first switching unit 71 is configured to provide the signal of the second bit line terminal BL2 to the electrode 5 under the control of the first bit line terminal BL1;

[0099] The second switching unit 72 is configured to provide the signal of the third bit line terminal BL3 to the spin source layer 2 under the control of the first word line terminal WL.

[0100] In an exemplary embodiment, the first switching unit 71 may include a first transistor. The first transistor may include a control electrode, a first electrode, and a second electrode. The control electrode of the first transistor is connected to the first bit line terminal BL1, the first electrode is connected to the second bit line terminal BL2, and the second electrode is connected to the electrode 5 of the corresponding magnetic recording unit.

[0101] In an exemplary embodiment, the second switching unit 72 may include a second transistor. The second transistor may include a control electrode, a first electrode, and a second electrode. The control electrode of the second transistor is connected to the first word line terminal WL, the first electrode is connected to one end of the spin source layer 2, and the second electrode is connected to the third bit line terminal BL3.

[0102] In one exemplary embodiment, the other end of the spin source layer 2 can be connected to a selection line SL. By controlling the voltage between the third bit line terminal BL3 and the selection line SL, the direction of the current applied to the spin source layer 2 can be controlled. However, this embodiment is not limited to this. The other end of the spin source layer 2 can be connected to a second voltage terminal VSS, such as a ground terminal.

[0103] In an exemplary embodiment, the first switching unit 71 may correspond one-to-one with the magnetic recording unit.

[0104] In an exemplary embodiment, different first switching units 71 can be connected to different first bit line terminals BL1 and different second bit line terminals BL2 to achieve independent control of different magnetic recording units.

[0105] In one exemplary embodiment, the first switch unit 71 in the same row or column can be connected to the same first bit terminal BL1, which can enable the simultaneous activation of one row or one column of magnetic recording units.

[0106] The first transistor is turned on and off by controlling the first line terminal BL1, thereby controlling the state of the channel of the magnetic transport layer of the corresponding magnetic recording unit, and thus controlling the on and off of the magnetic wave. When a write current pulse is applied, the magnetization state of the free layer 61 in the magnetic recording unit can be selectively flipped by the magnetic wave spin torque. The storage electronic device provided in this embodiment has the advantages of high switching ratio and high selectivity. In addition, the solution provided in this embodiment can realize parallel writing, which can achieve lower write current and smaller access transistor size, thereby effectively reducing the maximum write voltage of the MTJ. Compared with STT-MTJ, the solution provided in this embodiment has lower write power consumption; compared with SOT-MRAM, the bit cell area of ​​the solution provided in this embodiment is reduced.

[0107] This disclosure also provides a method for controlling a storage structure. For example... Figure 8 As shown, the storage structure control method provided in this embodiment includes:

[0108] Step 801: Apply a conduction voltage to the electrode to turn on the channel of the magnetic transport layer of the magnetic recording unit corresponding to the electrode; apply current to the spin source layer to achieve state flipping of the magnetic recording unit corresponding to the electrode;

[0109] Step 802: Apply a turn-off voltage to the electrode to shut down the channel of the magnetic transport layer of the magnetic recording unit corresponding to the electrode; maintain the state of the magnetic recording unit unchanged when the spin source layer is loaded with current.

[0110] The turn-on voltage is, for example, a voltage less than a preset voltage threshold V0, and the turn-off voltage is, for example, a voltage greater than or equal to the preset voltage threshold V0.

[0111] The solution provided in this embodiment can achieve electric field modulation of the magnetic particle transport channel, thereby controlling the magnetic particle spin torque and enabling independent control of the magnetization states of different MTJs (or GMRs) on the same channel. This achieves independent read and write operations. Parallel writing in this way allows for lower write current and smaller access transistors, effectively reducing the maximum write voltage of the MTJ. Compared to STT-MTJ, it has lower write power consumption; compared to SOT-MRAM, its bit cell area is smaller. Compared to voltage-controlled magnetic anisotropic (VCMA) magnetic random access memory (MRAM), which directly applies voltage to the magnetic recording cell to change the flip state without a magnetic particle transport layer, the solution provided in this embodiment is simpler to implement, has higher selectivity, and a larger on / off ratio.

[0112] While the embodiments disclosed in this invention are as described above, the content is merely for the purpose of facilitating understanding of the invention and is not intended to limit the invention. Any person skilled in the art to which this invention pertains may make any modifications and changes to the form and details of the implementation without departing from the spirit and scope disclosed herein; however, the scope of patent protection of this invention shall still be determined by the scope defined in the appended claims.

Claims

1. A magneton spin torque device, characterized in that, include: A substrate, a spin source layer disposed on the substrate, a magneton transport layer disposed on the side of the spin source layer away from the substrate, and a magnetic structure layer disposed on the side of the magneton transport layer away from the substrate, wherein the magneton transport layer comprises a multiferroic antiferromagnetic material, the spin source layer is used to excite magnetons in the magneton transport layer to generate a magneton flux; the magneton transport layer is used to generate a magneton flux in response to the excitation of the spin source layer, so as to generate a magneton spin torque in the magnetic structure layer; The multiferroic antiferromagnetic material includes at least one of the following: bismuth ferrite, lanthanum bismuth ferrite, terbium manganate, calcium manganate, lutetium manganate, and barium strontium manganate; The material of the spin source layer includes at least one of the following: platinum, tantalum, tungsten, tin, platinum-manganese alloy, tungsten ditelluride, bismuth-antimony alloy, iridium-manganese alloy, iridium dioxide, strontium ruthenate, and strontium iridium.

2. The magnetic spin torque device according to claim 1, characterized in that, Along a direction perpendicular to the substrate, the thickness of the magnetic transport layer is 2 to 1000 nanometers.

3. The magnetic spin torque device according to claim 1, characterized in that, The magnetic structure layer includes one or more vertically magnetically anisotropic thin films.

4. The magnetic spin torque device according to claim 1, characterized in that, The material of the magnetic structure layer includes at least one of the following: cobalt, cobalt iron boron, iron telluride, lanthanum strontium manganese oxide, platinum cobalt monolayer, and platinum cobalt multilayer.

5. The magnetic spin torque device according to any one of claims 1 to 4, characterized in that, The magnetic spin torque device further includes an electrode disposed on the side of the magnetic structure layer away from the substrate, wherein the orthographic projection of the electrode overlaps with the orthographic projection of the magnetic transport layer on a plane parallel to the substrate.

6. A storage structure, characterized in that, The device includes: a substrate; a spin source layer disposed on the substrate; a magnetic field transport layer disposed on the side of the spin source layer away from the substrate; at least one magnetic recording unit disposed on the side of the magnetic field transport layer away from the substrate; and an electrode disposed on the side of the magnetic recording unit away from the substrate. On a plane parallel to the substrate, the orthographic projection of the electrode overlaps with the orthographic projection of the magnetic field transport layer. The magnetic field transport layer comprises a multiferroic antiferromagnetic material. The spin source layer is used to excite magnetic fields in the magnetic field transport layer to generate a magnetic field flux. The magnetic field transport layer is used to generate a magnetic field flux in response to the excitation of the spin source layer, thereby changing the state of the magnetic recording unit. The multiferroic antiferromagnetic material includes at least one of the following: bismuth ferrite, lanthanum bismuth ferrite, terbium manganate, calcium manganate, lutetium manganate, and barium strontium manganate; The material of the spin source layer includes at least one of the following: platinum, tantalum, tungsten, tin, platinum-manganese alloy, tungsten ditelluride, bismuth-antimony alloy, iridium-manganese alloy, iridium dioxide, strontium ruthenate, and strontium iridium.

7. The storage structure according to claim 6, characterized in that, Each electrode corresponds to a magnetic recording unit.

8. The storage structure according to claim 6, characterized in that, Along a direction perpendicular to the substrate, the thickness of the magnetic transport layer is 2 to 1000 nanometers.

9. The storage structure according to any one of claims 6 to 8, characterized in that, The magnetic recording unit includes: a free layer, a barrier layer, and a fixed layer sequentially disposed on the side of the magnetic transmission layer away from the substrate, wherein the free layer and the fixed layer are perpendicular to magnetic anisotropy.

10. An electronic device, characterized in that, Includes the storage structure as described in any one of claims 6 to 9.

11. The electronic device according to claim 10, characterized in that, The electronic device further includes: a first switching unit and a second switching unit corresponding to the magnetic recording unit; the first switching unit is connected to the first bit line terminal, the second bit line terminal, and the electrode of the corresponding magnetic recording unit, respectively; the second switching unit is connected to the third bit line terminal, the first word line terminal, and one end of the spin source layer; wherein... The first switching unit is configured to provide a signal from the second bit line terminal to the electrode under the control of the first bit line terminal; The second switching unit is configured to provide the signal of the third bit line terminal to the spin source layer under the control of the first word line terminal.

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