Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

Abstract

Provided is a substrate processing apparatus, a method of manufacturing a semiconductor device, and a recording medium, which provide a technology for detecting the state of a placement surface of a substrate. The substrate processing apparatus includes a processing chamber that performs film formation processing on a substrate; a substrate support portion that is provided inside the processing chamber and has a plurality of placement surfaces on which the substrate is placed; and a detection portion that is disposed outside or inside the processing chamber and detects the state of film formation material adhering to the placement surfaces in a non-contact manner.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a recording medium. Background Technology

[0002] In a substrate processing apparatus used in the semiconductor manufacturing field, a film forming process is performed while heating a substrate placed on a mounting surface using the heat of a heater (for example, see Patent Document 1).

[0003] However, during the film deposition process on the substrate, sometimes the film-forming material wraps around from the outer periphery of the substrate to the back side and adheres to the mounting surface. If the film-forming material accumulates on the mounting surface in this way, it may cause defects in the substrate film deposition process. Therefore, it is necessary to remove the film-forming material accumulated on the mounting surface through regular maintenance.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2021-44419 Summary of the Invention

[0007] The purpose of this disclosure is to provide a technique for detecting the state of the mounting surface of a substrate.

[0008] According to one aspect of this disclosure, a substrate processing apparatus is provided, comprising: a processing chamber for performing film-forming processing on a substrate; a substrate support disposed within the processing chamber and having a plurality of mounting surfaces for mounting the substrate; and a detection unit disposed outside or inside the processing chamber for detecting the state of film-forming material attached to the mounting surfaces in a non-contact manner.

[0009] Invention Effects

[0010] According to one aspect of this disclosure, the state of the mounting surface of the substrate can be detected. Attached Figure Description

[0011] Figure 1 This is a schematic cross-sectional view of the reactor included in the substrate processing apparatus of the first embodiment of this disclosure.

[0012] Figure 2 This is a schematic longitudinal cross-sectional view of the reactor included in the substrate processing apparatus of the first embodiment of this disclosure, and is Figure 1 The reactor shown is a 2X-2X sectional view.

[0013] Figure 3 This is an explanatory diagram illustrating the substrate support mechanism according to the first embodiment of this disclosure.

[0014] Figure 4 yes Figure 1 4X-4X sectional view.

[0015] Figure 5 This is an explanatory diagram illustrating the raw material gas supply section of the first embodiment of this disclosure.

[0016] Figure 6 This is an explanatory diagram illustrating the reaction gas supply section of the first embodiment of this disclosure.

[0017] Figure 7 This is an explanatory diagram illustrating the first inactive gas supply section of the first embodiment of this disclosure.

[0018] Figure 8 This is an explanatory diagram illustrating the second inactive gas supply section of the first embodiment of this disclosure.

[0019] Figure 9 This is an explanatory diagram illustrating the camera movement mechanism according to the first embodiment of this disclosure.

[0020] Figure 10 This is an explanatory diagram illustrating the shooting area of ​​the camera according to the first embodiment of this disclosure.

[0021] Figure 11 This is an explanatory diagram illustrating the controller according to the first embodiment of this disclosure.

[0022] Figure 12 This is a flowchart illustrating the substrate processing steps of the first embodiment of this disclosure.

[0023] Figure 13 This is a flowchart illustrating the testing process of the first embodiment of this disclosure.

[0024] Figure 14 This is a flowchart illustrating the maintenance process of the first embodiment of this disclosure.

[0025] Explanation of reference numerals in the attached figures

[0026] 100: Substrate processing apparatus

[0027] 201: Processing Room

[0028] 209A: Window

[0029] 210: Testing Department

[0030] 214: Substrate transfer machine (transport unit)

[0031] 217: Rotary stage (substrate support)

[0032] 300: Controller (Control Unit)

[0033] S: Substrate Detailed Implementation

[0034] Hereinafter, one embodiment of the present disclosure will be described with reference to the accompanying drawings. Furthermore, the drawings used in the following description are schematic, and the dimensional relationships and ratios of the elements shown may not correspond to reality. Additionally, the dimensional relationships and ratios of the elements may not be consistent between different drawings.

[0035] <First Embodiment>

[0036] The substrate processing apparatus 100 of the first embodiment of this disclosure is an apparatus used in a substrate processing step, which is a process in the manufacturing process of a semiconductor device. Hereinafter, the structure of the substrate processing apparatus 100 will be described first, and then the substrate processing step using the substrate processing apparatus 100 will be described.

[0037] (Substrate processing apparatus)

[0038] like Figure 1 As shown, the substrate processing apparatus 100 includes a reactor 200. (As indicated...) Figure 1 and Figure 2 As shown, the reactor 200 includes: a processing chamber 201 for forming a film on a substrate S; and a rotating stage 217, which serves as an example of a substrate support, disposed within the processing chamber 201 and having multiple mounting surfaces 217C for mounting the substrate S. Additionally, as... Figure 4 As shown, the reactor 200 has a detection unit 210 that detects the state of the film-forming material adhering to the substrate 217C in a non-contact manner. Furthermore, in this disclosure, "film-forming material adhering to the substrate 217C" refers to at least one of the following: adsorbates of the material itself used to process the gas, adsorbates of substances produced by the reaction of the processed gas, and films formed by the accumulation of such substances. Additionally, the reaction of the processed gas refers to at least one of the following: decomposition reaction, chemical reaction, etc.

[0039] like Figure 1 and Figure 2 As shown, the reactor 200 has a processing container 203 that is a cylindrical (for example, a cylindrical shape) airtight container, and a processing chamber 201 for forming a film on the substrate S is formed inside the processing container 203. Furthermore, the processing container 203 is formed of, for example, stainless steel (SUS), aluminum alloy, etc.

[0040] A gate valve 205 is connected to the processing container 203. The substrate S is moved in and out of the processing chamber 201 via the gate valve 205. Furthermore, the opening of the processing container 203 with the gate valve 205 in this embodiment is an example of the substrate transfer outlet in this disclosure.

[0041] like Figure 1As shown, the processing chamber 201 has a processing zone 206 for supplying processing gas and a purging zone 207 for supplying purging gas. The processing zone 206 and purging zone 207 are alternately arranged in a circumferential shape. For example, they are arranged in the order of first processing zone 206A, first purging zone 207A, second processing zone 206B, and second purging zone 207B. As will be discussed later, a raw material gas is supplied to the first processing zone 206A. A reactive gas is supplied to the second processing zone 206B. Furthermore, an inactive gas is supplied to the first purging zone 207A and the second purging zone 207B. Thus, a prescribed treatment is performed on the substrate S according to the gas supplied to each zone.

[0042] The purging zone 207 is the region that spatially separates the first processing zone 206A and the second processing zone 206B. For example... Figure 2 As shown, the height of the top 208 of the purge region 207 is lower than the height of the top 209 of the processing region 206. A top 208A is provided in the first purge region 207A, and a top 208B (not shown) is provided in the second purge region 207B. By reducing the height of each top, the pressure in the space of the purge region 207 is increased. Adjacent processing regions 206 are divided by supplying purge gas to this space. Furthermore, the purge gas also serves to remove excess gas from the substrate S.

[0043] A rotating stage 217, serving as a substrate support, is provided at the center of the processing container 203. This rotating stage 217 has a rotation axis at the center of the processing container 203 and is configured to rotate freely. The rotating stage 217 is formed of materials such as quartz, carbon, or SiC to avoid causing metal contamination to the substrate S.

[0044] The rotary table 217 is configured to support multiple (e.g., 5) substrates S within the processing container 203 in a manner that they are arranged at intervals on the same surface and along the same circumference in the direction of rotation. Here, "same surface" is not limited to being completely the same surface; the multiple substrates S can be arranged in a manner that does not overlap each other when viewed from above.

[0045] A recess 217B is provided at the support position of the substrate S on the surface of the rotary table 217, serving as a mounting portion for placing the substrate S. The same number of recesses 217B as the number of substrates S being processed are arranged at intervals between each other in a concentric circle relative to the center of the rotary table 217. Furthermore, in this embodiment, a plurality of recesses 217B are arranged at equal intervals (e.g., 72° intervals).

[0046] Each recess 217B is circular when viewed from above, for example, the rotary table 217, and concave when viewed from the side. Preferably, the diameter of the recess 217B is slightly larger than the diameter of the substrate S. The bottom surface of the recess 217B is designated as the mounting surface 217C. The substrate S is placed within the recess 217B, and is supported by the mounting surface 217C. Each recess 217B has a plurality of through holes 217A through which the pin 219 (described later) passes.

[0047] like Figure 3 As shown, a substrate holding mechanism 218 is provided in the processing container 203, below the rotary table 217 and opposite to the gate valve 205. The substrate holding mechanism 218 has multiple pins 219 that lift the substrate S and support its back side during loading and unloading. The pins 219 are extendable and can be housed within, for example, the main body of the substrate holding mechanism 218. When transferring the substrate S, the pins 219 extend, passing through the through hole 217A and holding the substrate S. Then, by moving the top tip of the pin 219 downwards, the substrate S is placed in the recess 217B. The substrate holding mechanism 218 is fixed to the processing container 203 as an example. The substrate holding mechanism 218 can be any structure that allows the pins 219 to be inserted into the through hole 217A during substrate placement, or it can be fixed to the inner peripheral protrusion 282 or the outer peripheral protrusion 283 described later.

[0048] The rotary table 217 is fixed to the core 221. The core 221 is located at the center of the rotary table 217 and serves to fix the rotary table 217. Since it is a structure that supports the rotary table 217, it is made of metal to withstand the weight. A shaft 222 is arranged below the core 221. The shaft 222 supports the core 221.

[0049] The shaft 222 passes through a hole 223 at the bottom of the processing container 203, and is covered by an airtight container 204. The lower end of the shaft 222 is connected to a rotating part 224. The rotating part 224 is equipped with a rotating shaft, a motor, etc., and is configured to rotate the rotary table 217 according to the instructions of the controller 300, which is described later as a control unit. That is, the controller 300 rotates the rotary table 217 around the core portion 221, which is a point outside the substrate S, via the rotating part 224, causing the substrate S to pass through the first processing area 206A, the first purging area 207A, the second processing area 206B, and the second purging area 207B in sequence.

[0050] A quartz cover 225 is provided to cover the core 221. That is, the quartz cover 225 is located between the core 221 and the processing chamber 201. The quartz cover 225 is configured to cover the core 221 with a gap. The quartz cover 225 is formed of materials such as quartz or SiC to avoid metal contamination of the substrate S. The core 221, shaft 222, rotating part 224, and quartz cover 225 are collectively referred to as the support part.

[0051] A heater unit 281, which houses a heater 280 serving as a heating element, is disposed below the rotary table 217. The heater 280 heats each substrate S placed on the rotary table 217. The heater 280 is circumferentially shaped along the processing container 203.

[0052] The heater unit 281 mainly consists of the following parts: an inner peripheral protrusion 282 located on the bottom of the processing container 203 and positioned at the center of the processing container 203; an outer peripheral protrusion 283 positioned at a position further outward than the heater 280; and a heater 280. The inner peripheral protrusion 282, the heater 280, and the outer peripheral protrusion 283 are arranged in a concentric circle. A space 284 is formed between the inner peripheral protrusion 282 and the outer peripheral protrusion 283. The heater 280 is disposed in the space 284. The inner peripheral protrusion 282 and the outer peripheral protrusion 283 are also components fixed to the processing container 203, and therefore can also be considered as part of the processing container 203.

[0053] The circumferential heater 280 has been described here, but it is not limited to this as long as it can heat the substrate S; it can also be configured to be divided into multiple parts. Alternatively, it can be configured to have the heater 280 built into the rotary table 217.

[0054] A flange (not shown) is formed on the upper part of the inner peripheral protrusion 282 and on the heater 280 side. The window 285 is supported by the flange 282A and the upper surface of the outer peripheral protrusion 283. The window 285 is made of a material that allows heat generated from the heater 280 to pass through, such as quartz. The window 285 is fixed by being clamped by the upper part 286A of the venting structure 286 (described later) and the inner peripheral protrusion 282.

[0055] A heater control unit 287 is connected to the heater 280. The heater 280 is electrically connected to a controller 300, which is described later as the control unit. The controller 300 controls the power supply to the heater 280 according to the instructions of the controller 300 to perform temperature control.

[0056] A non-reactive gas supply pipe 275 communicating with space 284 is provided at the bottom of the processing container 203. The non-reactive gas supply pipe 275 is connected to the second non-reactive gas supply unit 270, which will be described later. The non-reactive gas supplied from the second non-reactive gas supply unit 270 is supplied to space 284 via the non-reactive gas supply pipe 275. By setting space 284 to a non-reactive gas atmosphere, it is possible to prevent processing gas from entering through gaps near window 285.

[0057] A metal exhaust structure 286 is disposed between the outer peripheral surface of the outer peripheral protrusion 283 and the inner peripheral surface of the processing container 203. The exhaust structure 286 has an exhaust groove 288 and an exhaust buffer space 289. The exhaust groove 288 and the exhaust buffer space 289 are configured in a circumferential shape along the shape of the processing container 203.

[0058] The portion of the exhaust structure 286 that does not contact the outer peripheral protrusion 283 is referred to as the upper portion 286A. As mentioned earlier, the upper portion 286A, together with the inner peripheral protrusion 282, secures the window 285.

[0059] In this rotary substrate processing apparatus, it is desirable to set the height of the substrate S and the height of the exhaust port to be the same or close to each other. By setting the height of the substrate S and the height of the exhaust port to be the same or close to each other, the generation of turbulence at the substrate edge on the exhaust port side can be suppressed.

[0060] In this embodiment, the upper end of the exhaust structure 286 is set to the same height as the rotary table 217. In this case, as... Figure 2 Thus, the upper part 286A becomes a portion extending from the window 285. Therefore, from the viewpoint of preventing particle diffusion, a quartz cover 290 is provided on its extended portion. A space is provided between the quartz cover 290 and the upper part 286A.

[0061] At the bottom of the exhaust structure 286 are exhaust ports 291 and 292, which serve as the first exhaust section. Exhaust port 291 mainly exhausts the raw material gas supplied to the first processing zone 206A and the purge gas supplied from its upstream. Exhaust port 292 mainly exhausts the reaction gas supplied to the processing zone 206B and the purge gas supplied from its upstream. Each gas is exhausted from exhaust ports 291 and 292 via exhaust channel 288 and exhaust buffer space 289.

[0062] Next, use Figure 1 and Figure 5 Description of raw material gas supply section 240. (e.g.) Figure 1As shown, a nozzle 245 extending toward the center of the processing container 203 is inserted into the side of the processing container 203. The nozzle 245 is disposed in the first processing area 206A. The downstream end of the gas supply pipe 241 is connected to the nozzle 245. Details of the nozzle 245 will be described later.

[0063] On the gas supply pipe 241, from upstream, there are sequentially arranged a raw material gas supply source 242, a mass flow controller (MFC) 243 as a flow controller (flow control unit), and a valve 244 as an on / off valve.

[0064] Raw material gas is supplied from nozzle 245 to the first processing zone 206A via MFC243, valve 244, and gas supply pipe 241.

[0065] The term "raw material gas" as used here refers to one type of processing gas, specifically a gas that serves as a raw material during the formation of the thin film. This raw material gas contains at least one of the following elements as constituent elements of the thin film: silicon (Si), titanium (Ti), tantalum (Ta), hafnium (Hf), zirconium (Zr), ruthenium (Ru), nickel (Ni), tungsten (W), and molybdenum (Mo). Furthermore, the raw material gas of this embodiment is an example of the film-forming material disclosed herein.

[0066] Specifically, in this embodiment, the feed gas is, for example, dichlorosilane (Si2H2Cl2) gas. When the feed gas is a gas at room temperature, the MFC243 is a mass flow controller for the gas.

[0067] The raw material gas supply unit (also referred to as the first gas supply system or raw material gas supply unit) 240 mainly consists of a gas supply pipe 241, an MFC 243, a valve 244, and a nozzle 245. Alternatively, the raw material gas supply source 242 can also be included in the raw material gas supply unit 240.

[0068] Next, use Figure 1 and Figure 6 Description of the reaction gas supply section 250. (e.g.) Figure 1 As shown, a nozzle 255 extending toward the center of the processing container 203 is inserted into the side of the processing container 203. The nozzle 255 is disposed in the second processing area 206B.

[0069] The nozzle 255 is connected to the downstream end of the gas supply pipe 251. From upstream, the gas supply pipe 251 is provided with a reaction gas supply source 252, an MFC 253, and a valve 254.

[0070] The reaction gas is supplied from nozzle 255 to the second processing zone 206B via MFC253, valve 254, and gas supply pipe 251.

[0071] The term "reaction gas" as used here refers to one of the processing gases, specifically the gas that reacts with the first layer formed on the substrate S using the raw material gas. The reaction gas is, for example, at least one of ammonia (NH3), nitrogen (N2), hydrogen (H2), and oxygen (O2). Here, the reaction gas is, for example, NH3.

[0072] The reaction gas supply unit (second gas supply unit) 250 mainly consists of a gas supply pipe 251, an MFC 253, a valve 254, and a nozzle 255. Alternatively, the reaction gas supply source 252 can also be included in the reaction gas supply unit 250.

[0073] Next, use Figure 1 and Figure 7 Explanation of the first inactive gas supply section 260. (e.g.) Figure 1 As shown, nozzles 265 and 266 extending toward the center of the processing container 203 are inserted on the side of the processing container 203. Nozzle 265 is inserted into the first purging region 207A. Nozzle 265 is fixed to the top 208A of the first purging region 207A, for example. Nozzle 266 is inserted into the second purging region 207B. Nozzle 266 is fixed to the top 208B (not shown) of the second purging region 207B, for example.

[0074] The nozzles 265 and 266 are connected to the downstream end of the inert gas supply pipe 261. From upstream, the inert gas supply pipe 261 is sequentially provided with an inert gas supply source 262, an MFC 263, and a valve 264. Inert gases are supplied from the nozzles 265 and 266 to the first purging zone 207A and the second purging zone 207B, respectively, via the MFC 263, valve 264, and inert gas supply pipe 261. The inert gases supplied to the first purging zone 207A and the second purging zone 207B function as purging gases.

[0075] The first inactive gas supply unit mainly consists of an inactive gas supply pipe 261, an MFC 263, a valve 264, a nozzle 265, and a nozzle 266. Alternatively, the inactive gas supply source 262 can also be included in the first inactive gas supply unit.

[0076] Next, use Figure 2 and Figure 8The second inactive gas supply unit 270 is described. The downstream end of the inactive gas supply pipe 271 is connected to the inactive gas supply pipe 275. An inactive gas supply source 272, an MFC 273, and a valve 274 are sequentially arranged on the inactive gas supply pipe 271 from the upstream direction. Inactive gas is supplied from the inactive gas supply pipe 275 to the space 284 and the container 204 via the MFC 273, the valve 274, and the inactive gas supply pipe 271.

[0077] The inactive gas supplied to container 204 is exhausted through exhaust channel 288 via the space between rotary table 217 and window 285. This configuration prevents the raw material gas and reactant gas from bypassing the space between rotary table 217 and window 285.

[0078] The second inactive gas supply unit 270 mainly consists of an inactive gas supply pipe 271, an MFC 273, a valve 274, and an inactive gas supply pipe 275. Alternatively, the inactive gas supply source 272 can also be included in the second inactive gas supply unit 270.

[0079] The term "inactive gas" as used here refers to at least one of rare gases such as nitrogen (N2 gas), helium (He gas), neon (Ne gas), and argon (Ar gas). In this context, N2 gas is an example of an inactive gas.

[0080] like Figure 1 , Figure 2 as well as Figure 5 As shown, the processing container 203 is provided with exhaust ports 291 and 292. In addition, the rotary table 217 is provided with exhaust port 296.

[0081] The exhaust port 291 is located downstream of the first processing area 206A on the rotation direction (rotation direction of the rotary table 217) and on the outer side of the rotary table 217. This exhaust port 291 primarily exhausts the raw material gas and inactive gases. An exhaust pipe 234A, as part of the exhaust section 234, is provided in communication with the exhaust port 291. A vacuum pump 234B, serving as a vacuum exhaust device, is connected to the exhaust pipe 234A via a valve 234D (which functions as an on / off valve) and an APC (AutoPressure Controller) valve 234C (which functions as a pressure regulator). This configuration enables vacuum exhaust to achieve a predetermined pressure (vacuum level) within the processing chamber 201.

[0082] The exhaust pipe 234A, valve 234D, and APC valve 234C are collectively referred to as the exhaust section 234. Alternatively, the vacuum pump 234B may be included in the exhaust section 234.

[0083] The exhaust port 296 is located near the center of the processing chamber 201, closer to the recess 217B of the substrate S on the rotary table 217. By providing the exhaust port 296, gas supplied to the center of the rotary table 217 is exhausted from the exhaust port 296 into the space below the rotary table 217. The gas exhausted into the space below the rotary table 217 is then exhausted through the exhaust port 291 located on the outside of the processing chamber 201. The exhaust port 296 communicates with the space between the rotary table 217 and the window 285, and is primarily used for exhausting raw material gases and inactive gases.

[0084] In addition, such as Figure 1 and Figure 2 As shown, an exhaust section 235 is provided in communication with an exhaust port 292. The exhaust port 292 is located on the outer side of the rotary table 217 downstream of the rotation direction R of the second processing area 206B. It is mainly used for exhausting reactive gases and inactive gases.

[0085] An exhaust pipe 235A, which is part of the exhaust section 235, is provided in connection with the exhaust port 292. A vacuum pump 235B is connected to the exhaust pipe 235A via a valve 235D and an APC valve 235C, and the system is configured to perform vacuum exhaust in a manner that makes the pressure inside the processing chamber 201 reach a predetermined pressure (vacuum level).

[0086] The exhaust pipe 235A, valve 235D, and APC valve 235C are collectively referred to as the exhaust section 235. Alternatively, the vacuum pump 235B may be included in the exhaust section 235.

[0087] As previously described, the reactor 200 includes a detection unit 210, described later, which detects the state of the film-forming material (film) attached to the mounting surface 217C in a non-contact manner. Specifically, the detection unit 210 detects the state (e.g., film thickness distribution, crack formation, etc.) of the film-forming material attached (residual) to the mounting surface 217C after the film-forming process on the substrate S. More specifically, the detection unit 210 is configured to detect film thickness image information of the film-forming material attached to the mounting surface 217C. That is, the detection unit 210 is an imaging device (hereinafter appropriately referred to as a "camera") that obtains film thickness image information by photographing the mounting surface 217C. As an example, in this embodiment, a hyperspectral camera is used as the detection unit 210, but this disclosure is not limited to this. Furthermore, the film thickness image information detected by the detection unit 210 includes image information of the film-forming material attached to the mounting surface 217C and wavelength information. In addition, film thickness image information, which is the detection information detected by the detection unit 210, is sent to the controller 300, which is the control unit described later.

[0088] like Figure 1 and Figure 4As shown, the detection unit 210 is disposed on the outside of the processing chamber 201, that is, on the outside of the processing container 203. Specifically, the detection unit 210 is disposed above the top 209. A window 209A is provided in the top 209. This window 209A is located in the top 209 near the gate valve 205. Specifically, it extends from the gate valve 205 side of the top 209 toward the center side of the processing container 203. That is, the window 209A extends radially along the processing container 203. The window 209A is formed, for example, by quartz. Therefore, the detection unit 210 can take pictures of the interior of the processing chamber 201 through the window 209A.

[0089] like Figure 4 and Figure 9 As shown, the detection unit 210 is configured to move in a direction orthogonal to the rotation axis of the rotary table 217, i.e., in the radial direction of the rotary table 217. Specifically, the detection unit 210 is configured to move along the extending direction of the window portion 209A. Here, the detection unit 210 moves radially on the rotary table 217 using a moving mechanism 211. The moving mechanism 211 includes: a pair of guide rails 211A, which are provided on both sides across the window portion 209A; a moving block 211B, which is guided and moved by the pair of guide rails 211A; and a force-applying unit 211C, which applies a moving force to the moving block 211B. The length of the pair of guide rails 211A is longer than the length of the window portion 209A. In addition, the detection unit 210 is mounted on the lower surface of the moving block 211B. Furthermore, the force-applying unit 211C is an electric actuator that moves the moving block 211B radially on the rotary table 217, and is controlled by the controller 300. Here, the detection unit 210 can detect the film thickness image information of the mounting surface 217C through the window 209A while moving using the moving mechanism 211.

[0090] In addition, the detection unit 210 starts from the detection start position ( Figure 9 The position) moves toward the rotation axis of the rotary table 217. Here, when the detection unit 210 is in the detection start position, the portion of the outer periphery of the mounting surface 217C located radially outside the rotary table 217 (refer to) Figure 10 The detection area SR (in other words, the imaging area) is included in the detection unit 210. In other words, at the start of detection, the detection unit 210 is positioned such that the portion of the outer periphery of the mounting surface 217C located radially outward of the rotary table 217 is included in the detection area SR. Then, the detection unit 210 moves radially along the rotary table 217, and when the detection unit 210 is in the reversible position, the portion of the outer periphery of the mounting surface 217C located radially inward (center side) of the rotary table 217 is included in the detection area SR (see reference). Figure 10 In other words, during the reversal, the detection unit 210 is positioned such that the portion of the outer periphery of the mounting surface 217C located radially inside the rotary table 217 is included in the detection area SR.

[0091] Furthermore, the detection unit 210 is positioned close to the gate valve 205 at the start of detection. That is, when the detection unit 210 is in the start position, it is close to the gate valve 205.

[0092] The reactor 200 has a controller 300 that controls the operation of its various parts. For example... Figure 11 As shown, the controller 300 includes at least an arithmetic unit (CPU) 301, a RAM 302 serving as temporary storage, a storage unit 303, and a transceiver unit 304. The controller 300 is connected to each structure of the board processing apparatus 100 via the transceiver unit 304, retrieves programs and processes from the storage unit 303 according to instructions from a host controller or user, and controls the operation of each structure based on the content of the programs and processes. Furthermore, the controller 300 can be configured as a dedicated computer or a general-purpose computer. For example, by preparing an external storage device (e.g., magnetic disk, floppy disk, hard disk, CD, DVD, MO, USB flash drive, memory card, etc.) 312 storing the aforementioned programs, and installing the programs onto a general-purpose computer using the external storage device 312, the controller 300 of this embodiment can be configured. Additionally, the means for supplying programs to the computer are not limited to the case of supplying them via the external storage device 312. For example, communication methods such as the Internet or dedicated lines can be used, and information can be received from the host device 320 via the transceiver unit 311 to supply programs without the need for external storage device 312. Alternatively, input / output devices 313 such as keyboards or touch panels can be used to issue instructions to the controller 300. Furthermore, the system can be configured to use the input / output device 313 to edit programs, including the maintenance program disclosed herein, and record the edited program in the storage unit 303.

[0093] Furthermore, the storage unit 303 and the external storage device 312 constitute a computer-readable recording medium. Hereinafter, these will also be collectively referred to as recording media. Additionally, when the term "recording medium" is used in this specification, there may be cases where only the storage unit 303 is included, cases where only the external storage device 312 is included, or cases where both are included.

[0094] CPU 301 is configured to read and execute a control program (including a maintenance program) from storage unit 303, and to read the process flow from storage unit 303 based on input operation instructions from input / output device 313. Furthermore, CPU 301 is configured to control each component according to the content of the read process flow.

[0095] (Substrate processing process)

[0096] Next, use Figure 12 The substrate processing steps of the first embodiment will be described. Figure 12 This is a flowchart illustrating the substrate processing steps of this embodiment. In the following description, the operation of each component of the reactor 200 of the substrate processing apparatus 100 is controlled by the controller 300.

[0097] Here, we will illustrate with the following example: using Si2H2Cl2 gas as the raw material gas and NH3 gas as the reaction gas, a silicon nitride (SiN) film is formed on a substrate S as a thin film.

[0098] The substrate loading and placement process S110 is described below. In the reactor 200, pin 219 is raised so that it passes through the through hole 217A of the rotary table 217. As a result, pin 219 protrudes a predetermined height relative to the surface of the rotary table 217. Next, gate valve 205 is opened, and a substrate transfer machine 214, which is an example of a transfer unit, is used to... Figure 3 This places the substrate S on the pin 219. After placement, the pin 219 is lowered to place the substrate S on the recess 217B.

[0099] Then, the rotary table 217 is rotated so that the recess 217B where the substrate S is not placed is aligned with the gate valve 205. Afterward, the substrate S is similarly placed in the recess 217B. This process is repeated until the substrate S is placed in all the recesses 217B.

[0100] After the substrate S is moved into the recess 217B, the substrate transfer machine 214 is moved away from the reactor 200, and the gate valve 205 is closed to seal the processing container 203.

[0101] Furthermore, when the substrate S is moved into the processing chamber 201, it is preferable to exhaust the contents of the processing chamber 201 using exhaust units 234 and 235, and to supply N2 gas, which is an inactive gas, into the processing chamber 201 from the first inactive gas supply unit 260. This suppresses the entry of particles into the processing chamber 201 and the adhesion of particles to the substrate S. Vacuum pumps 234B and 235B are kept in a continuously operating state at least from the substrate moving and placing process (S110) until the end of the substrate removal process (S170) described later.

[0102] When the substrate S is placed on the rotary table 217, power is supplied to the heater 280 in advance to control the surface of the substrate S to a predetermined temperature. The temperature of the substrate S is, for example, above room temperature and below 650°C, preferably above room temperature and below 400°C. The heater 280 is kept energized at least from the substrate loading and placement process (S110) until the end of the substrate unloading process (S170) described later.

[0103] In parallel, inactive gas is supplied from the second inactive gas supply unit 270 to the processing container 203 and the heater unit 281. The inactive gas is supplied at least during the period from the substrate loading and placement process (S110) to the end of the substrate unloading process (S170) described later.

[0104] The rotary table rotation start process S120 is described below. After the substrate S is placed into each recess 217B, the rotating unit 224 is controlled by the controller 300 to rotate the rotary table 217 in the R direction. By rotating the rotary table 217, the substrate S moves in the order of the first processing area 206A, the first purging area 207A, the second processing area 206B, and the second purging area 207B.

[0105] The gas supply start process S130 is described below. The substrate S is heated to reach a desired temperature. After the rotary table 217 reaches the desired rotational speed, valve 244 is opened to begin supplying Si2H2Cl2 gas to the first processing zone 206A. Simultaneously, valve 254 is opened to supply NH3 gas to the second processing zone 206B.

[0106] At this time, the MFC243 is adjusted to ensure that the flow rate of Si2H2Cl2 gas is within a specified range. Furthermore, the supply flow rate of Si2H2Cl2 gas is, for example, 50 sccm or more and 500 sccm or less.

[0107] In addition, the MFC253 is adjusted to ensure that the flow rate of NH3 gas is within a specified range. Furthermore, the supply flow rate of NH3 gas is, for example, 100 sccm or more and 5000 sccm or less.

[0108] Furthermore, after the substrate loading and placement process S110, exhaust units 234 and 235 continue to vent the processing chamber 201, and N2 gas, used as a purging gas, is supplied from the first inactive gas supply unit 260 to the first purging area 207A and the second purging area 207B. Additionally, by appropriately adjusting the valve openings of APC valves 234C and 235C, the pressure within the processing chamber 201 is set to a predetermined pressure.

[0109] The film formation process S140 is described below. In the film formation process S140, a silicon-containing layer is formed in the first processing region 206A of each substrate S. In the second processing region 206B after further rotation, the silicon-containing layer reacts with NH3 gas to form a SiN film on the substrate S. The rotary table 217 is rotated a predetermined number of times to achieve the desired film thickness.

[0110] The gas supply stop procedure S150 is described below. After the rotary table 217 has rotated a specified number of times, valves 244 and 254 are closed to stop the supply of Si2H2Cl2 gas to the first processing zone 206A and the supply of NH3 gas to the second processing zone 206B.

[0111] Explanation of the rotary table rotation stop process S160. The rotation of the rotary table 217 is stopped after the gas supply stop process S150.

[0112] The substrate removal process S170 is described below. The rotary table 217 is rotated to move the substrate S to a position opposite the gate valve 205. Then, the substrate S is supported on the pin 219 in the same manner as during substrate loading. After support, the gate valve 205 is opened, and the substrate S is removed from the processing container 203 using the substrate transfer machine 214. This process is repeated for each processed substrate S until all substrates S are removed. After removal, the supply of inert gas from the first inert gas supply unit 260 and the second inert gas supply unit 270 is stopped.

[0113] The inspection process S180 is described below. In inspection process S180, the state of the film-forming material adhered to the substrate 217C is inspected. Further details of inspection process S180 are as follows: Figure 13 As shown. First, the state (film thickness image information) of the film-forming material attached to the mounting surface 217C is detected using the detection unit 210 (step S181). Specifically, the rotary table 217 is rotated so that the first recess 217B moves to a position opposite to the gate valve 205. Then, with the rotary table 217 stopped, the moving mechanism 211 is activated to move the detection unit 210 radially along the rotary table 217. With this movement, the film thickness image information of the film-forming material attached to the first mounting surface 217C is continuously detected (acquired) using the detection unit 210. After the detection unit 210 reaches the reversing position, the rotary table 217 is rotated by a predetermined angle and stopped. Then, while moving the detection unit 210 from the reversing position to the starting position, the film thickness image information of the film-forming material attached to the first mounting surface 217C is continuously detected (acquired) using the detection unit 210. By obtaining the film thickness image information of the film-forming material attached to the mounting surface 217C in this way, a high-precision film thickness distribution of the film-forming material can be obtained. After obtaining the film thickness image information of the film-forming material attached to the mounting surface 217C of the first recess 217B, the rotary table 217 is rotated so that the second recess 217B is moved to a position opposite to the gate valve 205. The film thickness image information of the film-forming material attached to the mounting surface 217C of the second recess 217B is obtained using the same method as for the first recess 217B. After obtaining the film thickness image information of the film-forming material attached to all mounting surfaces 217C, the controller 300 proceeds to step S182.

[0114] Next, in step S182, the film thickness image information detected in step S181 is analyzed. Specifically, the occurrence of film cracks (crazing) or signs of cracking are determined based on the image information in the film thickness image information. Here, signs of cracking are determined by whether fine cracks, wrinkles, etc., occur at the edges of the film-forming material. In addition, the deformation of the mounting surface 217C is determined by calculating the distance between the top 209 and the mounting surface 217C and the distance between the top 209 and the portion other than the mounting surface 217C based on the image information. Furthermore, the film thickness distribution of the film-forming material is determined based on the wavelength information. The deformation of the mounting surface 217C refers at least to the flatness of the mounting surface 217C. The film deposited on the mounting surface 217C forms a thicker portion within the mounting surface 217C where no wafer is mounted. As a result, the height of the portion of the mounting surface 217C where the wafer is mounted and the portion where no wafer is mounted differs, and the flatness deteriorates. Here, height refers to the distance between the surface of the mounting surface 217C and the detection unit 210. Furthermore, even after cleaning the mounting surface 217C, due to the film thickness distribution within the mounting surface 217C, areas that were properly cleaned and areas where the surface of the mounting surface 217C was etched due to over-cleaning result in a deterioration in the flatness of the mounting surface 217C (deformation).

[0115] Next, based on the information analyzed in step S182, it is determined whether the film thickness (maximum value) of the film-forming material exceeds a predetermined value (step S183). If the film thickness exceeds the predetermined value, the process proceeds to step S185 to perform maintenance. On the other hand, if the film thickness does not exceed the predetermined value, the process proceeds to step S184.

[0116] Next, based on the information analyzed in step S182, it is determined whether cracking or signs of cracking are found in the film-forming material (step S184). If cracking or signs of cracking are found in the film-forming material, the process proceeds to step S185 to perform maintenance. On the other hand, if no cracking or signs of cracking are found, the process proceeds to step S186.

[0117] In step S185, maintenance of the mounting surface 217C is performed. Specifically, cleaning gas is supplied into the processing chamber 201 to clean the film-forming material adhering to the mounting surface 217C. Furthermore, the cleaning gas supply system is not illustrated; it can be configured to supply gas from existing nozzles or from a dedicated nozzle. After cleaning of the mounting surface 217C is completed, the process returns to step S181 to check the state of the film-forming material adhering to the mounting surface 217C. That is, the process returns to step S181 to determine whether maintenance of the mounting surface 217C is complete.

[0118] In step S186, based on the information analyzed in step S182, it is determined whether the deformation of the mounting surface 217C exceeds a predetermined value. If the deformation of the mounting surface 217C exceeds the predetermined value, the process proceeds to step S187, and a message urging the rotary table 217 to be replaced is issued. Then, the process proceeds to step S185, and maintenance of the mounting surface 217C is performed.

[0119] Then, the inspection process S180 ends, and the substrate processing process ends.

[0120] (program)

[0121] The program of the first embodiment of this disclosure is a program that causes the controller 300, which is a computer, to perform the following steps:

[0122] The step of placing the substrate S on the placement surface 217C of the rotary table 217 provided in the processing chamber 201;

[0123] The step of performing a film deposition process on the substrate S in the processing chamber 201; and

[0124] The step of using the detection unit 210 to detect the state of the film-forming material attached to the mounting surface 217C.

[0125] Next, the effects of this embodiment will be explained.

[0126] In the substrate processing apparatus 100 of this embodiment, the state of the film-forming material deposited on the mounting surface 217C of the substrate S is detected by the detection unit 210. As a result, the tilting of the substrate S on the mounting surface 217C due to uneven film thickness distribution or peeling of the film-forming material is suppressed, and the processing uniformity of the substrate S is improved.

[0127] In addition, the film-forming material will wrap around from the outer periphery of the substrate S to the space between the mounting surface 217C and the substrate S. Therefore, by setting the outer periphery of the mounting surface 217C to be within the detection area SR, the state of the film-forming material (film) can be effectively detected.

[0128] In addition, the detection unit 210 is brought close to the gate valve 205. By bringing the detection unit 210 close to the gate valve 205, the adhesion state of the film-forming material on the mounting surface 217C can be quickly detected after the substrate S is removed.

[0129] Furthermore, the film thickness distribution on the mounting surface 217C can be determined based on the film thickness image information obtained from the detection unit 210, and the position of the substrate transfer machine 214 during loading can be adjusted according to this film thickness distribution. In addition, an appropriate maintenance period can be set based on the film thickness and crack formation status determined from the film thickness image information.

[0130] Furthermore, since the film-forming material adhesion state on the mounting surface 217C is detected while the detection unit 210 is moved radially on the rotary table 217, film thickness image information with good accuracy can be obtained using a single detection unit 210.

[0131] (Other implementation methods)

[0132] In the foregoing embodiment, film thickness image information is acquired while the rotary table 217 is stopped, but this disclosure is not limited to this structure. For example, film thickness image information can also be acquired while the rotary table 217 is rotating. In this case, the time spent on the inspection process can be shortened.

[0133] In the aforementioned embodiment, the detection unit 210 is configured to move radially within the rotary table 217, but this disclosure is not limited to this configuration. For example, the detection unit 210 may also be configured to be fixed at the starting position. Furthermore, when the detection unit 210 is fixed, such as... Figure 14 As shown, multiple settings can also be configured (in...). Figure 14 There are two detection units 210. That is, the first detection unit 210 is disposed on the outer periphery of the mounting surface 217C, and the portion located on the outer periphery side of the rotary table 217 is included in the detection area SR. The second detection unit 210 is disposed on the outer periphery of the mounting surface 217C, and the portion located on the rotation axis side of the rotary table 217 is included in the detection area SR.

[0134] In the aforementioned embodiment, the detection unit 210 is configured to move radially on the rotary table 217, but this disclosure is not limited to this configuration. For example, the detection unit 210 may move along the outer periphery of the mounting surface 217C, or it may be configured to move in other ways. That is, as long as film thickness image information of the film-forming material attached to the mounting surface 217C can be obtained, the movement pattern of the detection unit 210 is not limited.

[0135] Alternatively, the system can be configured such that multiple maintenance programs are stored in the storage unit. Based on the film thickness determined from the film thickness image information of the mounting surface 217C, the optimal maintenance program is selected from these programs and executed. For example, multiple maintenance programs can be prepared, each with a maintenance time proportional to the thickness of the film formed on the mounting surface 217C. If the film thickness exceeds a preset value, the corresponding maintenance program is read from the storage unit and executed. With this configuration, maintenance time can be optimized, and the downtime (maintenance time) of the substrate processing apparatus can be shortened. This, in turn, can improve the manufacturing productivity of semiconductor devices.

[0136] Furthermore, in the aforementioned embodiments, the following situations were described: Si2H2Cl2 gas was used as the raw material gas, NH3 gas was used as the reactant gas, and a SiN film was formed on the substrate S as a nitride film. However, SiH4, Si2H6, Si3H8, aminosilane, and TSA gas can also be used as raw material gases. O2 gas can also be used as the reactant gas to form an oxide film. Other nitride films such as TaN and TiN, oxide films such as HfO, ZrO, and SiO, and metal films such as Ru, Ni, and W can also be formed on the substrate S. In addition, when forming a TiN film or a TiO film, titanium tetrachloride (TiCl4) or similar substances can be used as the raw material gas.

[0137] The embodiments of this disclosure have been specifically described above. This disclosure is not limited to the embodiments described above, and various modifications can be made without departing from its spirit. For example, if the controller 300 detects misalignment of the substrate S relative to the mounting surface 217C based on film thickness image information of the film-forming material deposited on the mounting surface 217C during the transfer of the substrate S, it can control the substrate transfer machine 214 to retry the transfer of the substrate S. This can suppress the deformation pattern of the film thickness distribution caused by the misalignment of the substrate S.

Claims

1. A substrate processing apparatus, characterized in that, have: The processing chamber is where a film-forming process is performed on the substrate; A substrate support portion is disposed in the processing chamber and has a plurality of mounting surfaces for mounting the substrate; as well as The detection unit is disposed on the outside or inside of the processing chamber. After the substrate is removed from the processing chamber, it detects the state of the film-forming material attached to the mounting surface in a non-contact manner. The state of the film-forming material is the film thickness distribution or the occurrence of cracks in the film-forming material.

2. The substrate processing apparatus according to claim 1, characterized in that, The detection unit is disposed on the outer periphery of the mounting surface, within the detection area.

3. The substrate processing apparatus according to claim 1 or 2, characterized in that, The detection unit is located near the substrate transfer outlet of the processing chamber.

4. The substrate processing apparatus according to claim 1, characterized in that, It has a control unit capable of controlling the detection unit. The detection unit detects the film thickness image information of the film-forming material attached to the mounting surface and sends it to the control unit.

5. The substrate processing apparatus according to claim 4, characterized in that, It has a rotating part that allows the substrate support to rotate within the processing chamber. The plurality of mounting surfaces are arranged at intervals in the rotational direction of the substrate support. The substrate processing apparatus includes a conveying unit that can be controlled by the control unit to convey the substrate. The control unit is configured to control the conveying unit to retry conveying the substrate if it detects a misalignment of the substrate relative to the mounting surface based on the image information of the mounting surface.

6. The substrate processing apparatus according to claim 5, characterized in that, The control unit is configured to obtain film thickness image information of the mounting surface and film thickness image information of the portion other than the mounting surface by means of the detection unit when the rotation of the substrate support portion operated by the rotating unit is stopped.

7. The substrate processing apparatus according to claim 6, characterized in that, The control unit is configured to determine the maintenance period of the substrate support based on at least one of the film thickness image information of the mounting surface and the film thickness image information of the portion other than the mounting surface.

8. The substrate processing apparatus according to claim 5, characterized in that, Equipped with multiple of the aforementioned detection units, The detection unit described in the first description is positioned such that the portion of the outer periphery of the mounting surface located on the outer periphery side of the substrate support is included in the detection area. The second detection unit is positioned such that the portion of the outer periphery of the mounting surface located on the rotation axis side of the substrate support is included in the detection area.

9. The substrate processing apparatus according to claim 5, characterized in that, The detection unit can move in a direction orthogonal to the rotation axis of the substrate support, and while moving on the mounting surface in the orthogonal direction, it detects the film thickness image information of the mounting surface.

10. The substrate processing apparatus according to claim 4, characterized in that, The control unit is configured to perform maintenance on the substrate support when cracks are detected in the film-forming material based on film thickness image information of the mounting surface.

11. The substrate processing apparatus according to claim 4, characterized in that, It has a storage unit that records multiple maintenance procedures. The control unit is configured to read from the storage unit and execute a corresponding maintenance program if the film thickness of the film-forming material on the mounting surface, calculated based on the film thickness image information of the mounting surface, exceeds a preset value.

12. The substrate processing apparatus according to claim 11, characterized in that, It also has input / output devices capable of displaying and editing the maintenance program.

13. The substrate processing apparatus according to claim 10, characterized in that, The control unit is configured to obtain film thickness image information of the mounting surface from the detection unit after maintenance of the mounting surface, and determine whether maintenance is completed.

14. The substrate processing apparatus according to claim 4, characterized in that, The control unit is configured to calculate the deformation of each of the mounting surfaces by determining the distance between each mounting surface and the detection unit based on the film thickness image information of the plurality of mounting surfaces.

15. The substrate processing apparatus according to claim 14, characterized in that, The control unit is configured to issue a message urging the replacement of the substrate support when the deformation of at least one of the mounting surfaces exceeds a predetermined value.

16. The substrate processing apparatus according to claim 14 or 15, characterized in that, The control unit is configured to clean the mounting surface when the deformation of at least one of the mounting surfaces reaches a predetermined value or higher, and after cleaning, acquire film thickness image information of multiple mounting surfaces and export the deformation of each mounting surface.

17. The substrate processing apparatus according to claim 5, characterized in that, The control unit is configured to continuously acquire film thickness image information of the mounting surface while the substrate support is rotated under the control of the rotation unit.

18. The substrate processing apparatus according to claim 5, characterized in that, The detection unit can rotate and move in the same direction as the rotation direction of the substrate support, or it can move in a direction orthogonal to the rotation axis of the substrate support. The control unit is configured to continuously acquire film thickness image information of the mounting surface while the detection unit is moved.

19. A method for manufacturing a semiconductor device, characterized in that, It has the following processes: The process of placing a substrate on multiple mounting surfaces of a substrate support provided in a processing chamber. The process of performing a film-forming treatment on the substrate in the processing chamber; as well as After the substrate is removed from the processing chamber, the state of the film-forming material attached to the mounting surface is detected by the detection unit. The state of the film-forming material refers to the film thickness distribution or the occurrence of cracks in the film-forming material.

20. A computer-readable recording medium, characterized in that, The record contains a program that uses a computer to cause a substrate processing apparatus to perform the following steps: The step of placing a substrate on multiple mounting surfaces provided in a substrate support portion located in a processing chamber. The step of performing a film-forming process on the substrate in the processing chamber; as well as After the substrate is removed from the processing chamber, the step of detecting the state of the film-forming material attached to the mounting surface using a detection unit, wherein the state of the film-forming material is the film thickness distribution or the occurrence of cracks in the film-forming material.

21. A substrate processing method, characterized in that, It has the following processes: The process of placing a substrate on multiple mounting surfaces of a substrate support provided in a processing chamber. The process of performing a film-forming treatment on the substrate in the processing chamber; as well as After the substrate is removed from the processing chamber, the state of the film-forming material attached to the mounting surface is detected by the detection unit. The state of the film-forming material refers to the film thickness distribution or the occurrence of cracks in the film-forming material.

Images