薄膜晶体管及采用薄膜晶体管的滤波器
By introducing an interface charge layer into the thin-film transistor, the self-gating effect is achieved by utilizing the interface charge layer between the carbon nanotube structure and the gate insulating layer, thus solving the problem of weak rectification characteristics of two-dimensional semiconductor transistors and realizing reconfigurable rectification characteristics.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TSINGHUA UNIVERSITY
- Filing Date
- 2021-09-02
- Publication Date
- 2026-07-17
AI Technical Summary
Transistors made of existing two-dimensional semiconductor materials have weak rectification characteristics, and contact asymmetry introduced during manufacturing can easily affect the rectification effect.
By introducing an interface charge layer into thin-film transistors, the interface charge layer between the carbon nanotube structure and the gate insulating layer acts as an additional gate in the Schottky barrier region near the drain, thereby realizing the self-gating effect of the carbon nanotube channel and achieving reconfigurable rectification behavior.
The reconfigurable rectification characteristics of the thin-film transistor are realized when switching between p-type and n-type gate voltages. Holes and electrons are injected through a narrow Schottky barrier region at the drain, and the rectification characteristics switch between forward and reverse.
Smart Images
Figure CN115810668B_ABST