An organic light emitting device and an organic light emitting apparatus

Abstract

This invention discloses an organic light-emitting device and an organic light-emitting apparatus. The organic light-emitting device includes: a first electrode, a light-absorbing structure, an organic light-emitting layer, and a second electrode stacked sequentially; wherein the first electrode is a light-transmitting electrode, and the second electrode is a reflective electrode; the light-absorbing structure absorbs light with a wavelength shorter than that emitted by the organic light-emitting layer. The light-absorbing structure not only reduces the damage of sunlight to the organic light-emitting layer, preventing structural cracking of the organic light-emitting layer and affecting device performance, but also does not absorb light emitted by the organic light-emitting layer, ensuring high photoelectric efficiency of the organic light-emitting device. Furthermore, the increased thickness of the device avoids short circuits caused by unavoidable impurities on the substrate used in electrode fabrication, improving device reliability.

Description

Technical Field

[0001] The present invention relates to the field of light-emitting technology, and in particular to an organic light-emitting device and an organic light-emitting apparatus. Background Technology

[0002] Organic light-emitting diode (OLED) devices have broad application prospects due to their advantages such as self-illumination, high contrast, thinness, fast response speed, and applicability to flexible panels.

[0003] The bond energies of the organic materials used in OLED devices are not stable. Under the irradiation of high-energy sunlight, their structure is prone to change, resulting in the loss of photoelectric properties and affecting normal use. Currently, the solution is to apply a film to the outside of the screen to block sunlight in a specific range. However, this changes the appearance of the screen and, to some extent, blocks the light emission of the OLED, affecting photoelectric efficiency. Summary of the Invention

[0004] This invention provides an organic light-emitting device and apparatus that not only reduces the damage of sunlight to the organic light-emitting layer and prevents structural cracking of the organic light-emitting layer from affecting device performance, but also does not absorb the light emitted by the organic light-emitting layer, ensuring high photoelectric efficiency of the organic light-emitting device. Furthermore, the increased device thickness avoids short circuits caused by unavoidable impurities on the substrate used in electrode fabrication, thus improving device reliability.

[0005] According to one aspect of the present invention, an organic light-emitting device is provided, the organic light-emitting device comprising:

[0006] The first electrode, the light-absorbing structure, the organic light-emitting layer, and the second electrode are stacked in sequence.

[0007] The first electrode is a light-transmitting electrode, and the second electrode is a reflective electrode; the light-absorbing structure can absorb light with a wavelength shorter than that emitted by the organic light-emitting layer.

[0008] Furthermore, the light-absorbing structure includes a solar cell structure, which includes a first electron transport layer, a light-absorbing layer, and a first hole transport layer stacked sequentially.

[0009] The first electrode is an anode, the second electrode is a cathode, and the first electron transport layer is disposed on the side of the light-absorbing layer adjacent to the first electrode; or, the first electrode is a cathode, the second electrode is an anode, and the first electron transport layer is disposed on the side of the light-absorbing layer adjacent to the organic light-emitting layer.

[0010] Furthermore, the bandgap of the light-absorbing layer satisfies the following formula:

[0011] 1240 / λ1≤Eg<1240 / λ2; where λ1 is the minimum wavelength of the emission spectrum of the organic light-emitting layer, λ2 is the maximum wavelength of light that affects the organic light-emitting layer, and Eg is the bandgap of the light-absorbing layer;

[0012] The Fermi level difference between the first electron transport layer and the first hole transport layer is greater than or equal to the energy level difference between the conduction band of the first electron transport layer and the valence band of the first hole transport layer.

[0013] Furthermore, the thickness of the light-absorbing layer is 10nm-1000nm.

[0014] Furthermore, the light-absorbing layer is made of materials including perovskite.

[0015] Furthermore, when the first electrode is the anode and the second electrode is the cathode, the light-absorbing structure includes a second hole transport layer. The second hole transport layer includes a first region and a second region. The second region is disposed on the side of the first region adjacent to the organic light-emitting layer. The P-type particle doping concentration of the second region is greater than that of the first region.

[0016] When the first electrode is a cathode and the second electrode is an anode, the light-absorbing structure includes a second electron transport layer. The second electron transport layer includes a third region and a fourth region. The fourth region is disposed on the side of the third region adjacent to the organic light-emitting layer. The N-type particle doping concentration in the fourth region is greater than that in the third region.

[0017] Furthermore, the energy level difference between the doped energy level of the second hole transport layer after P-type particle doping and the HOMO energy level of the host material of the second hole transport layer is greater than or equal to 1240 / λ1 and less than 1240 / λ2, where λ1 is the minimum wavelength of the emission spectrum of the organic light-emitting layer and λ2 is the maximum wavelength of light that affects the organic light-emitting layer.

[0018] The energy level difference between the doped energy level of the second electron transport layer after N-type particle doping and the LUMO energy level of the host material of the second electron transport layer is greater than or equal to 1240 / λ1 and less than 1240 / λ2.

[0019] Furthermore, the thickness of the second hole transport layer is 100nm-1000nm;

[0020] The thickness of the second electron transport layer is 100nm-1000nm.

[0021] Furthermore, when the first electrode is the anode and the second electrode is the cathode, the Fermi level of the first electron transport layer is higher than -4.6 eV and the band gap is greater than 3 eV; the material of the first electron transport layer is titanium oxide or zinc oxide.

[0022] Furthermore, when the first electrode is the anode and the second electrode is the cathode, a third electron transport layer is also provided between the second electrode and the organic light-emitting layer;

[0023] When the first electrode is the cathode and the second electrode is the anode, a third hole transport layer is also provided between the second electrode and the organic light-emitting layer.

[0024] According to another aspect of the present invention, an organic light-emitting device is provided, which includes the organic light-emitting device described in the above embodiments.

[0025] This invention provides an organic light-emitting device (OLED) that incorporates a light-absorbing structure between a first electrode and an organic light-emitting layer. This structure absorbs light with wavelengths shorter than those emitted by the organic light-emitting layer. This light-absorbing structure not only reduces damage from sunlight to the organic light-emitting layer, preventing structural cracking and impacting device performance, but also ensures high photoelectric efficiency by not absorbing the emitted light. Furthermore, the increased device thickness prevents short circuits caused by unavoidable impurities on the substrate used in electrode fabrication, thus improving device reliability.

[0026] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of the present invention, nor is it intended to limit the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description

[0027] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0028] Figure 1 This is a schematic diagram of the structure of an organic light-emitting device provided in an embodiment of the present invention;

[0029] Figure 2 This is a schematic diagram of another organic light-emitting device provided in an embodiment of the present invention;

[0030] Figure 3 This is a schematic diagram of the structure of another organic light-emitting device provided in an embodiment of the present invention;

[0031] Figure 4 This is a schematic diagram of another organic light-emitting device provided in an embodiment of the present invention;

[0032] Figure 5 This is a schematic diagram of another organic light-emitting device provided in an embodiment of the present invention. Detailed Implementation

[0033] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0034] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0035] This invention provides an organic light-emitting device. Figure 1 This is a schematic diagram of the structure of an organic light-emitting device provided in an embodiment of the present invention. (Reference) Figure 1 Organic light-emitting devices include:

[0036] The first electrode 1, the light-absorbing structure 2, the organic light-emitting layer 3, and the second electrode 4 are stacked in sequence.

[0037] Among them, the first electrode 1 is a light-transmitting electrode, and the second electrode 4 is a reflective electrode; the wavelength of light absorbed by the light-absorbing structure 2 is shorter than the wavelength of light emitted by the organic light-emitting layer 3.

[0038] Specifically, a certain voltage is applied to the first electrode 1 and the second electrode 4. Holes move from the anode to the organic light-emitting layer 3, and electrons move from the cathode to the organic light-emitting layer 3. When electrons and holes meet in the organic light-emitting layer 3, a radiative recombination reaction occurs, generating photons and causing the organic light-emitting layer 3 to emit light. The first electrode 1 can be the anode, and the second electrode 4 can be the cathode, or vice versa. The transparent electrode can be made of a transparent conductive metal oxide such as indium tin oxide (ITO), or other transparent conductive materials.

[0039] The light-absorbing structure 2 can include a solar cell structure or other similar solar cell structures, as long as it can absorb light with a wavelength shorter than that emitted by the organic light-emitting layer 3. The first electrode 1 is a transparent electrode; when the organic light-emitting device emits light, light is emitted from the first electrode 1. During the use of the organic light-emitting device, sunlight will pass through the first electrode 1 and enter the device. By setting the light-absorbing structure 2 between the first electrode 1 and the organic light-emitting layer 3, since the wavelength of light absorbed by the light-absorbing structure 2 is shorter than that emitted by the organic light-emitting layer 3, the light-absorbing structure 2 can not only absorb ultraviolet light with shorter wavelengths from sunlight, reducing damage to the organic light-emitting layer 3 and preventing structural cracking of the organic light-emitting layer 3 that could affect device performance, but also does not absorb light emitted by the organic light-emitting layer 3, thus not affecting its luminous effect.

[0040] This invention provides an organic light-emitting device (OLED) that incorporates a light-absorbing structure 2 between a first electrode 1 and an organic light-emitting layer 3. The light-absorbing structure 2 absorbs light with a wavelength shorter than that emitted by the organic light-emitting layer 3. This not only reduces the damage to the organic light-emitting layer 3 from sunlight and prevents structural cracking that could affect device performance, but also ensures high photoelectric efficiency by not absorbing the light emitted by the organic light-emitting layer 3. Furthermore, the increased device thickness prevents short circuits caused by unavoidable impurities on the substrate used in electrode fabrication, thus improving device reliability.

[0041] In addition, organic light-emitting devices are generally fabricated by sequentially forming a first electrode 1, an organic light-emitting layer 3, and a second electrode 4 on a substrate, or by sequentially forming a second electrode 4, an organic light-emitting layer 3, and a first electrode 1. When fabricating the first electrode 1 or the second electrode 4, impurity particles inevitably exist on the substrate. These impurity particles may cause a short circuit between the first electrode 1 and the second electrode 4 after fabrication. In this embodiment, by setting a light-absorbing structure 2 between the first electrode 1 and the organic light-emitting layer 3, the thickness of the device is increased. This can cover the impurity particles on the substrate or the fabrication defects on the first electrode 1 or the second electrode 4 caused by impurity particles, thereby avoiding short circuits and improving the reliability of the device.

[0042] Figure 2 This is a schematic diagram of another organic light-emitting device provided in an embodiment of the present invention. Figure 3 This is a schematic diagram of another organic light-emitting device provided in an embodiment of the present invention. Optional, refer to... Figure 2 and Figure 3 The light-absorbing structure includes a solar cell structure 21, which includes a first electron transport layer 5, a light-absorbing layer 6 and a first hole transport layer 7 stacked sequentially.

[0043] like Figure 2As shown, the first electrode 1 is the anode, the second electrode 4 is the cathode, and the first electron transport layer 5 is disposed on the side of the light-absorbing layer 6 adjacent to the first electrode 1; or, as... Figure 3 As shown, the first electrode 1 is the cathode, the second electrode 4 is the anode, and the first electron transport layer 5 is disposed on the side of the light-absorbing layer 6 adjacent to the organic light-emitting layer 3.

[0044] Specifically, when the first electrode 1 is the anode and the second electrode 4 is the cathode, such as Figure 2 As shown, the organic light-emitting device includes a first electrode 1 (anode), a first electron transport layer 5, a light-absorbing layer 6, a first hole transport layer 7, an organic light-emitting layer 3, and a second electrode 4 (cathode) stacked sequentially. The first electron transport layer 5 can be made of an n-type doped material, or an n-type material such as titanium oxide or zinc oxide; this embodiment of the invention does not impose any limitations on this. Under conditions without sunlight irradiation, the light-absorbing layer 6 generates electron-hole pairs under the voltage applied to the first electrode 1 (anode) and the second electrode 4 (cathode). Electrons move towards the first electron transport layer 5, and holes move towards the first hole transport layer 7, thus providing holes for the organic light-emitting layer 3. Electrons generated at the second electrode 4 (cathode) also move towards the organic light-emitting layer 3, thus providing electrons for the organic light-emitting layer 3. When electrons and holes meet in the organic light-emitting layer 3, a recombination reaction occurs, generating photons and causing the organic light-emitting layer 3 to emit light. When exposed to sunlight, sunlight enters the light-absorbing layer 6 through the first electrode 1 (anode). Under the action of sunlight, the speed at which the light-absorbing layer 6 generates electron-hole pairs can be accelerated. The current generated by the sunlight is then fed into the organic light-emitting layer 3, thereby improving the current efficiency entering the organic light-emitting layer 3 and increasing the brightness of the organic light-emitting device when used outdoors in sunlight.

[0045] When the first electrode 1 is the cathode and the second electrode 4 is the anode, as follows: Figure 3 As shown, the organic light-emitting device includes a first electrode 1 (cathode), a first hole transport layer 7, a light-absorbing layer 6, a first electron transport layer 5, an organic light-emitting layer 3, and a second electrode 4 (anode) stacked in sequence.

[0046] In the absence of sunlight, under the voltage applied to the first electrode 1 (cathode) and the second electrode 4 (anode), the light-absorbing layer 6 generates electron-hole pairs. Holes move to the first hole transport layer 7, and electrons move to the first electron transport layer 5, thus providing electrons for the organic light-emitting layer 3. Holes generated at the second electrode 4 (anode) move to the organic light-emitting layer 3, thus providing holes for it. When electrons and holes meet in the organic light-emitting layer 3, a recombination reaction occurs, generating photons and causing the organic light-emitting layer 3 to emit light. Under sunlight, sunlight enters through the first electrode 1 (cathode). Under the influence of sunlight, the generation of electron-hole pairs in the light-absorbing layer 6 is accelerated. The current generated by the sunlight replenishes the organic light-emitting layer 3, thereby increasing the current efficiency entering the organic light-emitting layer 3 and improving the brightness of the organic light-emitting device when used outdoors in sunlight.

[0047] Optional, see reference Figure 2 The bandgap width of the light-absorbing layer 6 satisfies the following formula:

[0048] 1240 / λ1≤Eg<1240 / λ2; where λ1 is the minimum wavelength of the emission spectrum of the organic light-emitting layer 3, λ2 is the maximum wavelength of light affecting the organic light-emitting layer 3, and Eg is the bandgap width of the light-absorbing layer. Eg is the bandgap width of the light-absorbing layer 6.

[0049] Specifically, since the energy of electrons in a solid is not continuous but exists in discontinuous energy bands, conduction requires the presence of free electrons or holes. The energy band where free electrons exist is called the conduction band, and the energy band where free holes exist is called the valence band. Therefore, for a bound electron to become a free electron or hole, it must acquire sufficient energy to transition from the valence band to the conduction band. This minimum energy is called the band gap. When the energy released by the light entering the light-absorbing layer 6 exceeds the band gap of the light-absorbing layer 6, the bound electrons in the light-absorbing layer 6 can become free electrons or holes, and this light can be absorbed by the light-absorbing layer 6.

[0050] 1240 / λ1 represents the energy corresponding to the minimum wavelength of light emitted by the organic light-emitting layer 3, and 1240 / λ2 represents the energy corresponding to the maximum wavelength of light that affects the organic light-emitting layer 3, such as the energy corresponding to ultraviolet light. The bandgap of the light-absorbing layer 6 is set to be greater than or equal to the energy corresponding to the minimum wavelength of light emitted by the organic light-emitting layer 3, and less than the energy corresponding to the maximum wavelength of light that affects the organic light-emitting layer 3. This allows the light-absorbing layer 6 to absorb the light that affects the organic light-emitting layer 3, without absorbing the light emitted by the organic light-emitting layer 3. This prevents the light that affects the organic light-emitting layer 3 from damaging it. Furthermore, absorbing the light that affects the organic light-emitting layer 3 can increase the current density of the organic light-emitting device, thereby improving the brightness of the organic light-emitting device when used outdoors in sunlight.

[0051] For example, the minimum wavelength λ1 of the emission spectrum of the organic light-emitting layer 3 is 580 nm. If Eg1240 / λ1 can be set, then the band gap of the light-absorbing layer 6 is 2140 eV.

[0052] Optionally, the Fermi level difference between the first electron transport layer 5 and the first hole transport layer 7 is greater than or equal to the energy level difference between the conduction band of the first electron transport layer 5 and the valence band of the first hole transport layer 7. This reduces the voltage required for carrier transport between the first electron transport layer 5 and the first hole transport layer 7, thereby lowering the voltage required to drive the organic light-emitting device to emit light.

[0053] Optional, continue to refer to Figure 2 The thickness of the light-absorbing layer 6 is 10nm-1000nm.

[0054] Specifically, the thicker the light-absorbing layer 6, the stronger its light absorption capacity. If the thickness of the light-absorbing layer 6 is less than 10nm, it is easy to result in insufficient light absorption capacity, failing to effectively protect the organic light-emitting layer 3; if the thickness of the light-absorbing layer 6 is greater than 1000nm, the organic light-emitting device becomes too thick. By setting the thickness of the light-absorbing layer 6 to 10nm-1000nm, it is possible to ensure that the light-absorbing layer 6 can absorb more sunlight, better protect the organic light-emitting layer 3, better increase the current of the organic light-emitting device, improve the luminous brightness, and also make the internal electric field of the entire organic light-emitting device smaller, thus improving the device lifespan, and also avoiding the organic light-emitting device becoming too thick.

[0055] Optional, continue to refer to Figure 2 The light-absorbing layer 6 is made of perovskite materials, such as CH3NH3ClBr. x .

[0056] Where x can be set as needed. CH3NH3ClBr x The band gap is 2140eV, ensuring that the light-absorbing layer 6 can absorb light from sunlight with wavelengths shorter than the minimum emission wavelength of organic light-emitting devices.

[0057] Figure 4 This is a schematic diagram of another organic light-emitting device provided in an embodiment of the present invention. Figure 5 This is a schematic diagram of another organic light-emitting device provided in an embodiment of the present invention. Optional, refer to... Figure 4 When the first electrode 1 is the anode and the second electrode 4 is the cathode, the light-absorbing structure includes a second hole transport layer 22. The second hole transport layer 22 includes a first region 8 and a second region 9. The second region 9 is disposed on the side of the first region 8 adjacent to the organic light-emitting layer 3. The P-type particle doping concentration of the second region 9 is greater than that of the first region 8.

[0058] refer to Figure 5 When the first electrode 1 is the cathode and the second electrode 2 is the anode, the light-absorbing structure includes a second electron transport layer 23. The second electron transport layer 23 includes a third region 10 and a fourth region 11. The fourth region 11 is disposed on the side of the third region 10 adjacent to the organic light-emitting layer 3. The N-type particle doping concentration of the fourth region 11 is greater than that of the third region 10.

[0059] Specifically, when the first electrode 1 is the anode and the second electrode 4 is the cathode, such as Figure 4 As shown, the organic light-emitting device (OLED) sequentially includes a first electrode 1 (anode), a first region 8 of a second hole transport layer 22, a second region 9 of the second hole transport layer 22, an organic light-emitting layer 3, and a second electrode 4 (cathode). Because the P-type particle doping concentration in the second region 9 of the second hole transport layer 22 is greater than that in the first region 8, the different doping concentrations allow the first region 8 and the second region 9 to form a PN junction-like structure. When sunlight shines, light enters through the first electrode 1 (anode). The PN junction-like structure formed by the first region 8 and the second region 9 can absorb smaller wavelengths of sunlight, thus preventing sunlight from causing the organic light-emitting layer 3 to crack and affecting the performance of the OLED. Furthermore, it can replenish the current within the OLED by absorbing sunlight, thereby increasing its brightness when used outdoors in sunlight.

[0060] When the first electrode 1 is the cathode and the second electrode 4 is the anode, as follows: Figure 5 As shown, the organic light-emitting device sequentially includes a first electrode 1 (cathode), a third region 10 of the second electron transport layer 23, a fourth region 11 of the second electron transport layer 23, an organic light-emitting layer 3, and a second electrode 4 (anode). Because the N-type particle doping concentration in the fourth region 11 of the second electron transport layer 23 is greater than that in the third region 10, the different doping concentrations allow the third region 10 and the fourth region 11 to form a PN junction-like structure. When sunlight shines, light enters through the first electrode 1 (cathode). The PN junction-like structure formed by the third region 10 and the fourth region 11 can absorb smaller wavelengths of sunlight, thus preventing the organic light-emitting layer 3 from cracking due to sunlight, which would affect the performance of the organic light-emitting device. Furthermore, it can replenish the current within the organic light-emitting device by absorbing sunlight, thereby increasing its brightness when used outdoors in sunlight.

[0061] Optional, see reference Figure 4 and Figure 5The energy level difference between the doping energy level of the second hole transport layer 22 after P-type particle doping and the HOMO energy level of the host material of the second hole transport layer 22 is greater than or equal to 1240 / λ1 and less than 1240 / λ2, where λ1 is the minimum wavelength of the emission spectrum of the organic light-emitting layer 3 and λ2 is the maximum wavelength of the light that affects the organic light-emitting layer 3; the energy level difference between the doping energy level of the second electron transport layer 23 after N-type particle doping and the LUMO energy level of the host material of the second electron transport layer 23 is greater than or equal to 1240 / λ1 and less than 1240 / λ2.

[0062] For details, please refer to Figure 4 The energy difference between the doping energy level of the second hole transport layer 22 after P-type particle doping and the HOMO energy level of the host material of the second hole transport layer 22 determines the wavelength of light that the second hole transport layer 22 can absorb. The energy difference between the doping energy level of the second hole transport layer 22 after P-type particle doping and the HOMO energy level of the host material of the second hole transport layer 22 is set to be greater than or equal to 1240 / λ1 and less than 1240 / λ2, so that the second hole transport layer 22 can absorb light that affects the organic light-emitting layer 3, such as ultraviolet light, without absorbing the light emitted by the organic light-emitting layer 3, thus avoiding damage to the organic light-emitting layer 3 by ultraviolet light and other light. Furthermore, absorbing light that affects the organic light-emitting layer 3, such as ultraviolet light, can increase the current density of the organic light-emitting device and improve the brightness of the organic light-emitting device when used outdoors in sunlight.

[0063] refer to Figure 5 The energy level difference between the doping energy level of the second electron transport layer 23 after N-type particle doping and the LUMO energy level of the host material of the second electron transport layer 23 determines the wavelength of light that the second electron transport layer 23 can absorb. The energy level difference between the doping energy level of the second electron transport layer 23 after N-type particle doping and the LUMO energy level of the host material of the second electron transport layer 23 is set to be greater than or equal to 1240 / λ1 and less than 1240 / λ2, so that the second electron transport layer 23 can absorb light such as ultraviolet light that affects the organic light-emitting layer 3, but will not absorb the light emitted by the organic light-emitting layer 3. This avoids damage to the organic light-emitting layer 3 caused by ultraviolet light and other light that affects the organic light-emitting layer 3. Furthermore, absorbing light such as ultraviolet light that affects the organic light-emitting layer 3 can increase the current density of the organic light-emitting device and improve the brightness of the organic light-emitting device when used outdoors in sunlight.

[0064] Optional, see reference Figure 4 The thickness of the second hole transport layer 22 is 100nm-1000nm;

[0065] refer to Figure 5 The thickness of the second electron transport layer 23 is 100nm-1000nm.

[0066] Specifically, the thicker the second hole transport layer 22 / second electron transport layer 23, the stronger its light absorption capacity. If the thickness of the second hole transport layer 22 / second electron transport layer 23 is less than 100nm, the light absorption capacity is insufficient, and it cannot effectively protect the organic light-emitting layer 3; if the thickness of the second hole transport layer 22 / second electron transport layer 23 is greater than 1000nm, the overall device thickness becomes too large. By setting the thickness of the second hole transport layer 22 to 100nm-1000nm and the thickness of the second electron transport layer 23 to 100nm-1000nm, it is ensured that the second hole transport layer 22 / second electron transport layer 23 can absorb more sunlight, better protect the organic light-emitting layer 3, better increase the current of the organic light-emitting device, improve the luminous brightness, and also make the internal electric field of the entire organic light-emitting device smaller, thus improving the device lifespan, and avoiding the organic light-emitting device being too thick.

[0067] Optional, such as Figure 2 As shown, when the first electrode 1 is the anode and the second electrode 4 is the cathode, the Fermi level of the first electron transport layer 5 is higher than -4.6 eV and the band gap is greater than 3 eV; the material of the first electron transport layer 5 is titanium oxide or zinc oxide.

[0068] Specifically, the Fermi level of the first electron transport layer 5 is higher than -4.6 eV, which allows it to form a Schottky contact with the first electrode 1 (anode), thereby reducing the injection voltage of the first electron transport layer 5. At the same time, the band gap is greater than 3 eV, which can ensure that enough light enters the light-absorbing layer 6.

[0069] Optional, see reference Figure 2 and Figure 4 When the first electrode 1 is the anode and the second electrode 4 is the cathode, at least one of the following is provided between the second electrode 4 and the organic light-emitting layer 3: a third electron transport layer 12, a hole blocking layer, and an electron injection layer.

[0070] refer to Figure 3 and Figure 5 When the first electrode 1 is the cathode and the second electrode 4 is the anode, at least one of the following is provided between the second electrode 4 and the organic light-emitting layer 3: a third hole transport layer 13, an electron blocking layer, and a hole injection layer.

[0071] Specifically, by setting a third electron transport layer 12, a hole blocking layer, and an electron injection layer, the electron injection efficiency can be improved, thereby increasing the device's luminous efficiency. By setting a third hole transport layer 13, an electron blocking layer, and a hole injection layer, the hole injection efficiency can be improved, thereby increasing the device's luminous efficiency.

[0072] This invention provides an organic light-emitting device, which includes the organic light-emitting device described in the above embodiments.

[0073] An organic light-emitting device provided in this embodiment of the invention has a light-absorbing structure between a first electrode and an organic light-emitting layer. The light-absorbing structure can absorb light with a wavelength shorter than that emitted by the organic light-emitting layer. The light-absorbing structure can not only reduce the damage of sunlight to the organic light-emitting layer and prevent the organic light-emitting layer structure from cracking and affecting the device performance, but also does not absorb the light emitted by the organic light-emitting layer and does not affect the light-emitting effect of the organic light-emitting layer.

[0074] It should be understood that the various forms of processes shown above can be used, with steps reordered, added, or deleted. For example, the steps described in this invention can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this invention can be achieved, and this is not limited herein.

[0075] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. An organic light emitting device, characterized by, include: The first electrode, the light-absorbing structure, the organic light-emitting layer, and the second electrode are stacked in sequence. Wherein, the first electrode is a light-transmitting electrode, and the second electrode is a reflective electrode; the wavelength of the light absorbed by the light-absorbing structure is less than the wavelength of the light emitted by the organic light-emitting layer; The light-absorbing structure includes a solar cell structure, which includes a first electron transport layer, a light-absorbing layer, and a first hole transport layer stacked sequentially. The first electrode is an anode, the second electrode is a cathode, and the first electron transport layer is disposed on the side of the light-absorbing layer adjacent to the first electrode; or, the first electrode is a cathode, the second electrode is an anode, and the first electron transport layer is disposed on the side of the light-absorbing layer adjacent to the organic light-emitting layer. The bandgap width of the light-absorbing layer satisfies the following formula: 1240 / λ1≤Eg<1240 / λ2; where λ1 is the minimum wavelength of the emission spectrum of the organic light-emitting layer, λ2 is the maximum wavelength of light that affects the organic light-emitting layer, and Eg is the bandgap of the light-absorbing layer; The Fermi level difference between the first electron transport layer and the first hole transport layer is greater than or equal to the energy level difference between the conduction band of the first electron transport layer and the valence band of the first hole transport layer.

2. The organic light-emitting device according to claim 1, characterized in that: The thickness of the light-absorbing layer is 10nm-1000nm.

3. The organic light-emitting device according to claim 1, characterized in that: The light-absorbing layer is made of perovskite material.

4. The organic light-emitting device according to claim 1, characterized in that: When the first electrode is the anode and the second electrode is the cathode, the Fermi level of the first electron transport layer is higher than -4.6 eV and the band gap is greater than 3 eV; the material of the first electron transport layer is titanium oxide or zinc oxide.

5. An organic light-emitting device, characterized in that, It includes at least one organic light-emitting device as described in any one of claims 1-4.

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