III-V族氮化物晶片N极性面单面抛光方法及III-V族氮化物晶片
By using a nanoscale polishing slurry with a pH of 7-8 and undergoing multiple thinning processes on the N-polar surface of III-V nitride wafers, the problems of high polishing difficulty and high surface roughness on the N-polar surface were solved, resulting in a wafer surface with low roughness and low defects, suitable for applications such as high-frequency, high-power microwave transistors and sensors.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SUZHOU NANOWIN SCI & TECH
- Filing Date
- 2022-12-14
- Publication Date
- 2026-07-17
AI Technical Summary
III-V nitride wafers have problems such as poor chemical stability, easy corrosion, difficult polishing, easy generation of defects on the epitaxial surface and large surface roughness. Existing polishing methods are difficult to effectively reduce surface roughness and improve the adaptability of crystal facet angle.
A nano-scale polishing slurry with a pH of 7-8, combined with a soft medium-bristle polishing pad, is used to polish the N-polar surface of a III-V group nitride wafer. The polishing pressure is 140-220 g/cm2, and the polishing disc speed is 25-35 rpm. The surface roughness is reduced by multiple single-sided thinning processes, including the use of abrasives such as boron carbide powder, silicon oxide powder, and diamond polishing slurry.
The surface roughness of the N-polar plane of III-V nitride wafers was reduced to below 0.2 nm, which reduced lattice defects, improved wafer flatness and electrical performance, and met the polishing requirements of different crystal plane bevel angles.
Smart Images
Figure CN115816262B_ABST