Semiconductor device
By optimizing the mold design and the protrusion structure of the sealing resin, the problem of mold-resin adhesion was solved, improving the production efficiency and yield of semiconductor packaging and achieving higher productivity.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- KK TOSHIBA
- Filing Date
- 2022-01-17
- Publication Date
- 2026-07-14
AI Technical Summary
In existing semiconductor packaging production processes, the adhesion problem between the mold and the resin leads to reduced productivity, especially in large-cavity packaging, where poor resin filling and frequent mold cleaning affect production efficiency.
By optimizing the mold design, increasing the ratio of the direct gate to the cross-sectional area of the cavity to more than 10%, and setting protrusions on the sealing resin, the stability of resin flow is ensured and the adhesion between the mold and the resin is reduced.
It effectively inhibits the adhesion between the mold and the resin, improves the production efficiency and yield of semiconductor packaging, reduces the frequency of mold cleaning, and enhances productivity.
Smart Images
Figure CN115831882B_ABST
Abstract
Description
[0001] Related applications
[0002] This application enjoys priority based on Japanese Patent Application No. 2021-152689 (filed on September 17, 2021). This application incorporates all contents of the basic application by reference to that basic application. Technical Field
[0003] The implementation methods mainly involve semiconductor devices. Background Technology
[0004] As a resin sealing technology for semiconductors, transfer molding is one method. In transfer molding, a semiconductor package is manufactured by filling a cavity containing a semiconductor chip with molten resin in a plunger and then allowing it to solidify. For example, the productivity of semiconductor packages can be improved by filling multiple cavities connected by a sprue with molten resin. Summary of the Invention
[0005] The implementation provides a semiconductor device that can improve productivity.
[0006] The semiconductor device of the embodiment includes: a die pad; a semiconductor chip fixed on the die pad; and a sealing resin covering at least a portion of the semiconductor chip and the die pad. The sealing resin has a first side surface and a second side surface opposite to the first side surface in a first direction, a lower surface and an upper surface opposite to the lower surface in a second direction, at least one first protrusion on the first side surface, and at least one second protrusion on the second side surface. The cross-sectional area of the at least one first protrusion on a section perpendicular to the first direction is at least 10% of the maximum cross-sectional area of the sealing resin on a section perpendicular to the first direction, and the cross-sectional area of the at least one second protrusion on a section perpendicular to the first direction is at least 10% of the maximum cross-sectional area. The maximum cross-sectional area is 6 mm². 2 above. Attached Figure Description
[0007] Figure 1A , Figure 1B , Figure 1C This is a schematic diagram of the semiconductor device according to the first embodiment.
[0008] Figure 2A , Figure 2B , Figure 2C This is a schematic cross-sectional view of the semiconductor device according to the first embodiment.
[0009] Figure 3 This is a schematic cross-sectional view illustrating an example of a method for manufacturing a semiconductor device according to the first embodiment.
[0010] Figure 4A , Figure 4B This is a schematic cross-sectional view illustrating an example of a method for manufacturing a semiconductor device according to the first embodiment.
[0011] Figure 5 This is a schematic cross-sectional view illustrating an example of a method for manufacturing a semiconductor device according to the first embodiment.
[0012] Figure 6 This is a schematic cross-sectional view illustrating an example of a method for manufacturing a semiconductor device according to the first embodiment.
[0013] Figure 7A , Figure 7B This is a schematic cross-sectional view illustrating an example of a method for manufacturing a semiconductor device according to the first embodiment.
[0014] Figure 8 This is a schematic cross-sectional view illustrating an example of a method for manufacturing a semiconductor device according to the first embodiment.
[0015] Figure 9 This is a schematic cross-sectional view illustrating an example of a method for manufacturing a semiconductor device according to the first embodiment.
[0016] Figure 10A , Figure 10B , Figure 10C This is a schematic diagram of a comparative example of the semiconductor device according to the first embodiment.
[0017] Figure 11A , Figure 11B , Figure 11C This is a schematic cross-sectional view of a comparative example of the semiconductor device according to the first embodiment.
[0018] Figure 12A , Figure 12B This is a schematic cross-sectional view illustrating an example of a manufacturing method for a comparative example of the semiconductor device according to the first embodiment.
[0019] Figure 13 This is a schematic cross-sectional view illustrating an example of a manufacturing method for a comparative example of the semiconductor device according to the first embodiment.
[0020] Figure 14A , Figure 14B , Figure 14C This is a schematic cross-sectional view of the semiconductor device according to the second embodiment.
[0021] Figure 15A , Figure 15B This is a schematic cross-sectional view illustrating an example of a method for manufacturing a semiconductor device according to the second embodiment.
[0022] Figure 16A , Figure 16B , Figure 16C This is a schematic diagram of a semiconductor device according to the third embodiment.
[0023] Figure 17A , Figure 17B , Figure 17C This is a schematic diagram of a semiconductor device according to the fourth embodiment.
[0024] Figure 18A , Figure 18B , Figure 18C This is a schematic cross-sectional view of the semiconductor device according to the fourth embodiment. Detailed Implementation
[0025] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Furthermore, in the following description, the same or similar parts will sometimes be labeled with the same reference numerals, and descriptions of parts that have been described once will be appropriately omitted.
[0026] In this specification, the lengths of components constituting a semiconductor device, for example, can be determined from images obtained using a Scanning Electron Microscope (SEM).
[0027] (First Implementation)
[0028] The semiconductor device according to the first embodiment includes: a die pad; a semiconductor chip fixed on the die pad; and a sealing resin covering at least a portion of the semiconductor chip and the die pad. The sealing resin has a first side surface and a second side surface opposite to the first side surface in a first direction, a lower surface and an upper surface opposite to the lower surface in a second direction, at least one first protrusion on the first side surface, at least one second protrusion on the second side surface, and the cross-sectional area of the at least one first protrusion on a section perpendicular to the first direction is at least 10% of the maximum cross-sectional area of the sealing resin on the section perpendicular to the first direction. The cross-sectional area of the at least one second protrusion on the section perpendicular to the first direction is at least 10% of the maximum cross-sectional area, and the maximum cross-sectional area is 6 mm². 2 above.
[0029] The semiconductor device in the first embodiment is a semiconductor package 100 in which a semiconductor chip is sealed with resin.
[0030] Figure 1A , Figure 1B as well as Figure 1C This is a schematic diagram of the semiconductor device according to the first embodiment. Figure 1A It is a top view. Figure 1B It is a cross-sectional view. Figure 1B yes Figure 1A AA' section. Figure 1CIt is a cross-sectional view. Figure 1C yes Figure 1A BB' section.
[0031] Figure 2A , Figure 2B as well as Figure 2C This is a schematic cross-sectional view of the semiconductor device according to the first embodiment. Figure 2A yes Figure 1A The CC' section. Figure 2B yes Figure 1A The DD' section. Figure 2C yes Figure 1A The EE' section.
[0032] The semiconductor package 100 includes a semiconductor chip 10, a die pad 12, a lead portion 14, a bonding wire 16, and a sealing resin 18.
[0033] The sealing resin 18 has a first side surface sf1, a second side surface sf2, a third side surface sf3, a fourth side surface sf4, a lower surface bf, and an upper surface tf. The sealing resin 18 has a first protrusion 18a and a second protrusion 18b.
[0034] Hereinafter, the direction from the first side sf1 toward the second side sf2 is defined as the first direction, the direction from the third side sf3 toward the fourth side sf4 is defined as the third direction, and the direction from the lower surface bf toward the upper surface tf is defined as the second direction.
[0035] Semiconductor chip 10 is, for example, a power semiconductor device. Semiconductor chip 10 is, for example, a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), an Insulated Gate Bipolar Transistor (IGBT), or a diode.
[0036] The semiconductor chip 10 is fixed to the die pad 12. The semiconductor chip 10 is fixed to the surface of the die pad 12, for example, using solder.
[0037] The die pad 12 is, for example, rectangular in shape. The die pad 12 is made of metal. The die pad 12 is, for example, copper or a copper alloy.
[0038] The thickness of the bare die pad 12 is, for example, 0.5 mm.
[0039] The lead portion 14 is located in a third direction from the die pad 12. The lead portion 14 is metal. For example, the lead portion 14 is copper or a copper alloy. The lead portion 14 is formed, for example, from the same material as the die pad 12.
[0040] The thickness of the bare die pad 12 is, for example, 0.5 mm.
[0041] The bonding wire 16 connects the semiconductor chip 10 to the lead portion 14. The bonding wire 16 electrically connects the semiconductor chip 10 to the lead portion 14.
[0042] The bonding wire 16 is a metal wire. The bonding wire 16 may contain, for example, copper (Cu) or aluminum (Al). The bonding wire 16 may be, for example, a copper wire or an aluminum wire.
[0043] Sealing resin 18 covers the semiconductor chip 10 and the bonding wire 16. Sealing resin 18 covers at least a portion of the bare die pad 12. Sealing resin 18 covers at least a portion of the lead portion 14. Sealing resin 18 functions to protect the semiconductor chip 10 and the bonding wire 16.
[0044] The sealing resin 18 comprises a resin. For example, the sealing resin 18 comprises an epoxy resin.
[0045] The sealing resin 18 has a first side sf1, a second side sf2, a third side sf3, a fourth side sf4, a lower surface bf, and an upper surface tf. The second side sf2 is opposite to the first side sf1 in a first direction. The fourth side sf4 is opposite to the third side sf3 in a third direction. The upper surface tf is opposite to the lower surface bf in a second direction.
[0046] The sealing resin 18 has a first protrusion 18a and a second protrusion 18b.
[0047] The first protrusion 18a is provided on the first side surface sf1 of the sealing resin 18. The first protrusion 18a protrudes in a first direction.
[0048] The second protrusion 18b is provided on the second side surface sf2 of the sealing resin 18. The second protrusion 18b protrudes in the first direction.
[0049] The cross-sectional area of the first protrusion 18a on the section perpendicular to the first direction is more than 10% and less than 50% of the maximum cross-sectional area of the sealing resin 18 on the section perpendicular to the first direction. For example, Figure 2C The area of the cross-section of the sealing resin 18 shown is the maximum cross-sectional area of the sealing resin 18. For example, Figure 2A The area of the cross-section of the first protrusion 18a shown is Figure 2C The area of the cross-section of the sealing resin 18 shown is more than 10% and less than 50%.
[0050] Furthermore, the cross-sectional area of the second protrusion 18b on the section perpendicular to the first direction is more than 10% and less than 50% of the maximum cross-sectional area of the sealing resin 18 on the section perpendicular to the first direction. For example, Figure 2BThe area of the cross-section of the second protrusion 18b shown is Figure 2C The area of the cross-section of the sealing resin 18 shown is more than 10% and less than 50%.
[0051] The maximum cross-sectional area of the sealing resin 18 is 6 mm². 2 above.
[0052] The length of the first protrusion 18a in the second direction ( Figure 2A d1 in the figure is, for example, 100 μm or more and 1 mm or less. Additionally, the length of the second protrusion 18b in the second direction ( Figure 2B d2 in the example is greater than 0.1 mm and less than 1 mm.
[0053] The third-direction length of the first protrusion 18a is, for example, 0.1 mm or more and 5 mm or less. Similarly, the third-direction length of the second protrusion 18b is, for example, 0.1 mm or more and 5 mm or less.
[0054] The distance between the upper surface tf and the lower surface bf ( Figure 2C For example, d3 in the figure is 1 mm or more. In other words, the thickness of the sealing resin 18 is 1 mm or more.
[0055] The length of the first protrusion 18a in the first direction is, for example, 0.05 mm or more and 2 mm or less. Similarly, the length of the second protrusion 18b in the first direction is, for example, 0.05 mm or more and 2 mm or less.
[0056] Next, an example of a method for manufacturing a semiconductor device according to the first embodiment will be described.
[0057] The semiconductor package 100 of the first embodiment is manufactured using a transfer molding method.
[0058] Figure 3 , Figure 4A , Figure 4B , Figure 5 , Figure 6 , Figure 7A , Figure 7B , Figure 8 as well as Figure 9 This is a schematic cross-sectional view illustrating an example of a method for manufacturing a semiconductor device according to the first embodiment. Figure 3 , Figure 5 , Figure 6 , Figure 8 as well as Figure 9 It is a cross-sectional view parallel to the direction of resin flow. Figure 4A , Figure 4B , Figure 7A as well as Figure 7B It is a cross-sectional view perpendicular to the direction of resin flow. Figure 4A yes Figure 3 The FF' section. Figure 4B yes Figure 3 The GG' section. Figure 7A yes Figure 6 The HH' section. Figure 7B yes Figure 6 Section II'.
[0059] First, a lead frame containing multiple die pads 12 with semiconductor chips 10 fixed to them is clamped using a mold consisting of an upper mold 31 and a lower mold 32. The lead frame containing multiple die pads 12 with semiconductor chips 10 fixed to them is clamped between the upper mold 31 and the lower mold 32. Figure 3 ).exist Figures 3 to 9 The diagram omits the lead frame portion other than the bare die pad 12.
[0060] By aligning the upper mold 31 and the lower mold 32, multiple chambers 34 are formed and a sprue 36 connects the adjacent chambers 34. Figure 4A , Figure 4B The bare die pad 12 on which the semiconductor chip 10 is fixed is located inside the chamber 34.
[0061] Figure 4A It is a cross-sectional view including the direct sprue 36. Figure 4B It is a cross-sectional view including chamber 34.
[0062] The cross-sectional area of the sprue 36 on the section perpendicular to the resin flow direction is more than 10% of the maximum cross-sectional area of the chamber 34 on the section perpendicular to the resin flow direction. For example, Figure 4B The area of the cross-section of chamber 34 shown is the maximum cross-sectional area of chamber 34. For example, Figure 4A The area of the cross-section of the direct sprue 36 shown is Figure 4B The cross-sectional area of the chamber 34 shown is more than 10% and less than 50%.
[0063] The maximum cross-sectional area of chamber 34 is 6 mm². 2 above.
[0064] Next, molten resin 38 is filled into chamber 34 by a plunger not shown in the figure. Figure 5 Resin 38 flows through a sprue 36 between chambers 34. Resin 38 is, for example, epoxy resin.
[0065] After all chambers 34 are filled with resin 38, the resin 38 is cooled and cured. Figure 6 , Figure 7A , Figure 7B ).like Figure 7AAs shown, cured resin 38 also remains at the sprue. A portion of the resin 38 remaining at the sprue becomes the first protrusion 18a and the second protrusion 18b of the semiconductor package 100. Filled with... Figure 7B The resin 38 inside the chamber 34 shown becomes the sealing resin 18 of the semiconductor package 100.
[0066] Next, the upper mold 31 and the lower mold 32 are separated from the cured resin 38. Figure 8 ).
[0067] Next, the resin 38 remaining at the direct sprue is cut off using a laser. Figure 9 The first protrusion 18a and the second protrusion 18b are formed by cutting off the resin 38 remaining in the sprue.
[0068] Through the manufacturing method described above, multiple semiconductor packages 100 according to the first embodiment are formed.
[0069] Next, the function and effects of the semiconductor device in the first embodiment will be explained.
[0070] Figure 10A , Figure 10B as well as Figure 10C This is a schematic diagram of a comparative example of the semiconductor device according to the first embodiment. Figure 10A It is a top view. Figure 10B It is a cross-sectional view. Figure 10B yes Figure 10A AA' section. Figure 10C It is a cross-sectional view. Figure 10C yes Figure 10A BB' section.
[0071] Figure 10A , Figure 10B as well as Figure 10C It is the semiconductor device of the first embodiment. Figure 1A , Figure 1B as well as Figure 1C The corresponding diagram.
[0072] Figure 11A , Figure 11B as well as Figure 11C This is a schematic cross-sectional view of a comparative example of the semiconductor device according to the first embodiment. Figure 11A yes Figure 10A The CC' section. Figure 11B yes Figure 10A The DD' section. Figure 11C yes Figure 10A The EE' section.
[0073] Figure 11A , Figure 11B as well as Figure 11CIt is the semiconductor device of the first embodiment. Figure 2A , Figure 2B as well as Figure 2C The corresponding diagram.
[0074] A comparative example of the semiconductor device in the first embodiment is a semiconductor package 900 in which a semiconductor chip is sealed with resin. The semiconductor package 900 includes a semiconductor chip 10, a die pad 12, a lead portion 14, a bonding wire 16, and a sealing resin 18.
[0075] The semiconductor package 900 of the comparative example differs from the semiconductor package 100 of the first embodiment in that the cross-sectional area of the first protrusion 18a on the cross-section perpendicular to the first direction is less than 10% of the maximum cross-sectional area of the sealing resin 18 on the cross-section perpendicular to the first direction. For example, Figure 11C The area of the cross-section of the sealing resin 18 shown is the maximum cross-sectional area of the sealing resin 18. For example, Figure 11A The area of the cross-section of the first protrusion 18a shown is less than Figure 11C The area of the cross-section of the sealing resin 18 shown is 10%.
[0076] Furthermore, the semiconductor package 900 of the comparative example differs from the semiconductor package 100 of the first embodiment in that the cross-sectional area of the second protrusion 18b on the cross-section perpendicular to the first direction is less than 10% of the maximum cross-sectional area of the sealing resin 18 on the cross-section perpendicular to the first direction. For example, Figure 11B The area of the cross-section of the second protrusion 18b shown is less than Figure 11C The area of the cross-section of the sealing resin 18 shown is 10%.
[0077] In the manufacturing method of the comparative example of the semiconductor device of the first embodiment, the shapes of the portions of the upper mold 31 and the lower mold 32 that form the direct sprue are different from those in the manufacturing method of the semiconductor device of the first embodiment.
[0078] Figure 12A , Figure 12B as well as Figure 13 This is a schematic cross-sectional view illustrating an example of a manufacturing method for a comparative example of the semiconductor device according to the first embodiment. Figure 12A , Figure 12B It is a cross-sectional view perpendicular to the direction of resin flow. Figure 13 It is a cross-sectional view parallel to the direction of resin flow. Figure 12A , Figure 12B It is the same as the semiconductor device manufacturing method of the first embodiment. Figure 4A , Figure 4B The corresponding diagram. Additionally... Figure 13 It is the same as the semiconductor device manufacturing method of the first embodiment. Figure 8 The corresponding diagram.
[0079] Figure 12A It is a cross-sectional view including the direct sprue 36. Figure 12B It is a cross-sectional view including chamber 34.
[0080] The cross-sectional area of the direct sprue 36 on the section perpendicular to the resin flow direction is less than 10% of the maximum cross-sectional area of the chamber 34 on the section perpendicular to the resin flow direction. For example, Figure 12B The area of the cross-section of chamber 34 shown is the maximum cross-sectional area of chamber 34. For example, Figure 12A The area of the cross-section of the direct sprue 36 shown is smaller than Figure 12B The area of the cross-section of the chamber 34 shown is 10%.
[0081] The maximum cross-sectional area of chamber 34 is 6 mm². 2 above.
[0082] like Figure 13 As shown, in the manufacturing method of the comparative example, when separating the upper mold 31 and the lower mold 32 from the cured resin 38, sometimes a portion 38x of the resin adheres to the portion of the upper mold 31 and the lower mold 32 where the sprue is formed.
[0083] If a portion 38x of resin adheres to the parts of the upper mold 31 and lower mold 32 that form the sprue, the effective cross-sectional area of the sprue will decrease, for example, when continuously forming the next semiconductor package 900, potentially leading to poor filling of the resin 38. Consequently, for example, the yield of the semiconductor package 900 will decrease, and the productivity of the semiconductor package 900 will be reduced.
[0084] Furthermore, if a portion 38x of resin adheres to the portion of the upper mold 31 and lower mold 32 where the sprue is formed, then, for example, before continuously forming the semiconductor package 900, the upper mold 31 and lower mold 32 need to be cleaned, which reduces the productivity of the semiconductor package 900.
[0085] Resin adhesion to the mold is believed to result from a strong covalent bond between the mold and resin through resin dehydration and condensation. Adhesive additives are added to the resin filling the cavity, for example, to improve adhesion to lead frames, etc. During resin curing, the mold and resin are bonded together through hydrogen bonds by the adhesive additives, thus improving the adhesion between the mold and resin.
[0086] In the comparative manufacturing method, it is considered that the pressure or viscosity of the resin in the direct sprue increases, thereby causing the resin to undergo dehydration condensation. The mold and the resin are then bonded together through covalent bonds, which are more stable than hydrogen bonds, resulting in the adhesion of the mold to the resin.
[0087] The inventors' research results indicate that the pressure and viscosity of the resin in the sprue depend on the ratio of the sprue's cross-sectional area to the maximum cross-sectional area of the chamber. Furthermore, it has been clarified that by increasing the ratio of the sprue's cross-sectional area to the maximum cross-sectional area of the chamber, the pressure or viscosity of the resin in the sprue can be reduced. Therefore, it has been clarified that by increasing the aforementioned ratio, resin dehydration and condensation can be suppressed, and adhesion between the mold and the resin in the sprue can be suppressed.
[0088] The inventors' research results show that by making the cross-sectional area of the sprue on the section perpendicular to the resin flow direction more than 10% of the maximum cross-sectional area of the chamber on the section perpendicular to the resin flow direction, it is possible to suppress the adhesion of the mold and resin in the sprue.
[0089] Previously, the cross-sectional area of the sprue was optimized from the perspectives of cavity filling speed and the efficiency of laser cutting of resin at the sprue. This time, from the perspective of suppressing the adhesion between the mold and resin in the sprue, we have also found that the cross-sectional area of the sprue needs to be optimized.
[0090] In particular, the maximum cross-sectional area of the chamber is 6 mm². 2 In the above cases, in the previous methods for optimizing the cross-sectional area of the sprue, the cross-sectional area of the sprue is less than 10% of the maximum cross-sectional area of the chamber.
[0091] In the semiconductor package 100 of the first embodiment, the cross-sectional area of the first protrusion 18a on the cross-section perpendicular to the first direction is 10% or more of the maximum cross-sectional area of the sealing resin 18 on the cross-section perpendicular to the first direction. Furthermore, the cross-sectional area of the second protrusion 18b on the cross-section perpendicular to the first direction is 10% or more of the maximum cross-sectional area of the sealing resin 18 on the cross-section perpendicular to the first direction.
[0092] The semiconductor package 100 is manufactured using a mold in which the cross-sectional area of the sprue 36 on the cross-section perpendicular to the flow direction of the resin 38 is at least 10% of the maximum cross-sectional area of the chamber 34 on the cross-section perpendicular to the flow direction of the resin 38. Therefore, adhesion between the mold and the resin in the sprue during the manufacture of the semiconductor package 100 can be suppressed. This improves the productivity of the semiconductor package 100.
[0093] In semiconductor package 100, the distance between the upper surface tf and the lower surface bf ( Figure 2C The thickness of the sealing resin 18 in the semiconductor package 100 is preferably 1 mm or more. In other words, the thickness of the sealing resin 18 in the semiconductor package 100 is preferably 1 mm or more. The configuration of the semiconductor package 100 is particularly effective when the thickness of the sealing resin 18 is 1 mm or more and the maximum cross-sectional area of the sealing resin 18 is increased.
[0094] From the viewpoint of suppressing the adhesion between the mold and the resin in the sprue, the length of the first protrusion 18a in the second direction ( Figure 2A The length of d1 in the second direction is preferably 0.1 mm or more, more preferably 0.2 mm or more. Furthermore, from the viewpoint of suppressing adhesion between the mold and resin in the sprue, the length of the second protrusion 18b in the second direction ( Figure 2B The d2 in the figure is preferably 0.1 mm or more, and more preferably 0.2 mm or more.
[0095] From the viewpoint of improving the efficiency of laser-based cutting of resin at the direct sprue, the length of the first protrusion 18a in the second direction ( Figure 2A The length of d1 in the second direction is preferably 1 mm or less. Furthermore, from the viewpoint of suppressing adhesion between the mold and resin in the sprue, the length of the second protrusion 18b in the second direction ( Figure 2B The d2 in the figure is preferably less than 1 mm.
[0096] The maximum cross-sectional area of chamber 34 is preferably 4 mm². 2 The above is preferred to be 6mm. 2 The above is further preferred to be 10mm. 2 above.
[0097] According to the first embodiment, semiconductor packaging that can improve productivity can be achieved.
[0098] (Second Implementation)
[0099] The semiconductor device of the second embodiment differs from that of the semiconductor device of the first embodiment in that the shape of the cross section of at least one first protrusion perpendicular to the first direction is a trapezoidal shape with opposite sides in the second direction as the upper and lower bases, and the shape of the cross section of at least one second protrusion perpendicular to the first direction is a trapezoidal shape with opposite sides in the second direction as the upper and lower bases. Hereinafter, some descriptions that are repeated in the first embodiment will be omitted.
[0100] Figure 14A , Figure 14B as well as Figure 14C This is a schematic cross-sectional view of the semiconductor device according to the second embodiment. Figure 14A , Figure 14B as well as Figure 14C It is the semiconductor device of the first embodiment. Figure 2A , Figure 2B as well as Figure 2C The corresponding diagram.
[0101] The semiconductor device in the second embodiment is a semiconductor package 200 in which a semiconductor chip is sealed with resin.
[0102] like Figure 14AAs shown, the shape of the first protrusion 18a in its cross-section perpendicular to the first direction is a trapezoidal shape with its upper and lower bases being opposite sides in the second direction. Furthermore, as... Figure 14B As shown, the shape of the second protrusion 18b on the cross section perpendicular to the first direction is a trapezoidal shape with the opposite sides in the second direction as the upper and lower bases.
[0103] Figure 15A , Figure 15B This is a schematic cross-sectional view illustrating an example of a method for manufacturing a semiconductor device according to the second embodiment. Figure 15A , Figure 15B It is a cross-sectional view perpendicular to the direction of resin flow. Figure 15A , Figure 15B It is the same as the semiconductor device manufacturing method of the first embodiment. Figure 4A , Figure 4B The corresponding diagram.
[0104] Figure 15A It is a cross-sectional view including the direct sprue 36. Figure 15B It is a cross-sectional view including chamber 34.
[0105] like Figure 15A As shown, in the cross-section including the sprue 36, the upper mold 31 has a tapered shape. The tapered angle is, for example, 70 degrees or more and 85 degrees or less.
[0106] In manufacturing the semiconductor package 200 of the second embodiment, the upper mold 31 has a tapered shape in the cross-section including the sprue 36. This shape suppresses resin adhesion to the mold when separating the upper mold 31 from the cured resin 38. Therefore, the productivity of the semiconductor package 200 is further improved compared to the semiconductor package 100.
[0107] According to the second embodiment, semiconductor packaging that can improve productivity can be achieved.
[0108] (Third Implementation)
[0109] The semiconductor device of the third embodiment differs from the semiconductor device of the first embodiment in that the sealing resin comprises inorganic particles, the length in the second direction of at least one first protrusion is at least twice the average particle size of the inorganic particles, and the length in the second direction of at least one second protrusion is at least twice the average particle size of the inorganic particles. Hereinafter, some descriptions that are repeated in the first embodiment will be omitted.
[0110] Figure 16A , Figure 16B as well as Figure 16C This is a schematic diagram of a semiconductor device according to the third embodiment. Figure 16A It is a top view. Figure 16B It is a cross-sectional view. Figure 16B yes Figure 16A AA' section. Figure 16C It is a cross-sectional view. Figure 16C yes Figure 16A BB' section.
[0111] Figure 16A , Figure 16B as well as Figure 16C It is the semiconductor device of the first embodiment. Figure 1A , Figure 1B as well as Figure 1C The corresponding diagram.
[0112] The semiconductor device in the third embodiment is a semiconductor package 300 in which a semiconductor chip is sealed with resin. The semiconductor package 300 includes a semiconductor chip 10, a die pad 12, a lead portion 14, a bonding wire 16, and a sealing resin 18.
[0113] like Figure 16B as well as Figure 16C As shown, the sealing resin 18 contains inorganic particles 18p. The inorganic particles 18p are so-called fillers.
[0114] Inorganic particles 18p, for example, have the function of reducing the difference in the coefficients of thermal expansion between the semiconductor chip 10 and the sealing resin 18, and suppressing the generation of stress within the semiconductor package 300. By suppressing the generation of stress within the semiconductor package 300, for example, poor connection between the semiconductor chip 10 and the bonding wire 16, and poor connection between the lead portion 14 and the bonding wire 16 can be suppressed, thereby improving the reliability of the semiconductor package 300.
[0115] The inorganic particles 18p are, for example, silica particles. The average particle size of the inorganic particles 18p is, for example, 30 μm or more and 100 μm or less. The particle size of the inorganic particles 18p is, for example, defined by the maximum diameter of the particles. The average particle size of the inorganic particles 18p is, for example, obtained by calculating the average value of the maximum diameter of each particle from a cross-sectional image of the sealing resin 18 obtained by SEM, using image processing.
[0116] For example, if the size of the sprue is smaller than the particle size of the inorganic particles, the inorganic particles will have difficulty flowing through the sprue during semiconductor packaging. Consequently, the pressure or viscosity of the resin in the sprue will increase, creating a potential risk of adhesion between the mold and the resin in the sprue.
[0117] In the package 300 of the third embodiment, the length of the first protrusion 18a in the second direction ( Figure 16B d1) is more than twice the average particle size of the inorganic particles. Additionally, the length of the second protrusion 18b in the second direction ( Figure 16BIn this context, d2) is more than twice the average particle size of the inorganic particles.
[0118] Therefore, during the manufacturing of package 300, the increase in pressure or viscosity of the resin in the direct sprue can be suppressed. As a result, the productivity of package 300 is improved.
[0119] From the viewpoint of suppressing the increase in pressure or viscosity of the resin in the direct sprue, the length of the first protrusion 18a in the second direction ( Figure 16B The d1 in the second direction is more preferably three times or more the average particle size of the inorganic particles. Furthermore, the length of the second protrusion 18b in the second direction ( Figure 16B The d2 in the figure is more preferably three times or more the average particle size of the inorganic particles.
[0120] From the viewpoint of suppressing the increase in pressure or viscosity of the resin in the direct sprue, the third-direction length of the first protrusion 18a is preferably more than twice the average particle size of the inorganic particles. Similarly, the third-direction length of the second protrusion 18b is preferably more than twice the average particle size of the inorganic particles.
[0121] According to the third embodiment, semiconductor packaging that can improve productivity can be achieved.
[0122] (Fourth Implementation)
[0123] The semiconductor device of the fourth embodiment differs from that of the semiconductor device of the first embodiment in that at least two or more first protrusions and at least two or more second protrusions are present. Hereinafter, some descriptions that are repeated in the first embodiment will be omitted.
[0124] Figure 17A , Figure 17B as well as Figure 17C This is a schematic diagram of a semiconductor device according to the fourth embodiment. Figure 17A It is a top view. Figure 17B It is a cross-sectional view. Figure 17B yes Figure 17A AA' section. Figure 17C It is a cross-sectional view. Figure 17C yes Figure 17A BB' section.
[0125] Figure 17A , Figure 17B as well as Figure 17C It is the semiconductor device of the first embodiment. Figure 1A , Figure 1B as well as Figure 1C The corresponding diagram.
[0126] Figure 18A , Figure 18B as well as Figure 18CThis is a schematic cross-sectional view of the semiconductor device according to the fourth embodiment. Figure 18A yes Figure 17A The CC' section. Figure 18B yes Figure 17A The DD' section. Figure 18C yes Figure 17A The EE' section.
[0127] Figure 18A , Figure 18B as well as Figure 18C It is the semiconductor device of the first embodiment. Figure 2A , Figure 2B as well as Figure 2C The corresponding diagram.
[0128] The semiconductor device of the fourth embodiment is a semiconductor package 400 in which a semiconductor chip is sealed with resin. The semiconductor package 400 includes a semiconductor chip 10, a die pad 12, a lead portion 14, a bonding wire 16, and a sealing resin 18.
[0129] The sealing resin 18 has a first protrusion 18a1, a first protrusion 18a2, a second protrusion 18b1, and a second protrusion 18b2.
[0130] Two first protrusions, a first protrusion 18a1 and a first protrusion 18a2, are provided on the first side surface sf1 of the sealing resin 18. In addition, two second protrusions, a second protrusion 18b1 and a second protrusion 18b2, are provided on the second side surface sf2 of the sealing resin 18.
[0131] The sum of the cross-sectional areas of the first protrusion 18a1 and the first protrusion 18a2 on the cross-section perpendicular to the first direction is more than 10% and less than 50% of the maximum cross-sectional area of the sealing resin 18 on the cross-section perpendicular to the first direction. For example, Figure 18C The area of the cross-section of the sealing resin 18 shown is the maximum cross-sectional area of the sealing resin 18. For example, Figure 18A The sum of the cross-sectional area of the first protrusion 18a1 and the cross-sectional area of the first protrusion 18a2 shown is: Figure 18C The area of the cross-section of the sealing resin 18 shown is more than 10% and less than 50%.
[0132] Furthermore, the sum of the cross-sectional areas of the second protrusion 18b1 and the second protrusion 18b2 on the section perpendicular to the first direction is more than 10% and less than 50% of the maximum cross-sectional area of the sealing resin 18 on the section perpendicular to the first direction. For example, Figure 18B The sum of the cross-sectional areas of the second protrusion 18b1 and the second protrusion 18b2 shown is: Figure 18C The area of the cross-section of the sealing resin 18 shown is more than 10% and less than 50%.
[0133] The maximum cross-sectional area of the sealing resin 18 is 6 mm². 2 above.
[0134] Furthermore, the number of first protrusions and the number of second protrusions can be three or more. Moreover, the first protrusion and the second protrusion can also be trapezoidal in shape with opposite sides in the second direction as the upper and lower bases.
[0135] The positions of the first protrusion and the second protrusion are, for example, symmetrical with respect to a surface perpendicular to the first direction. By making the position of the sprue symmetrical, the flow of resin in the chamber is stabilized, and resin filling with less deviation can be achieved.
[0136] According to the fourth embodiment, semiconductor packaging that can improve productivity can be achieved.
[0137] Several embodiments of the present invention have been described, but these embodiments are provided as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. For example, the constituent elements of one embodiment may be replaced or modified with the constituent elements of other embodiments. These embodiments and their variations are included in the scope or spirit of the invention, and are included in the scope of the invention and its equivalents as described in the claims.
Claims
1. A semiconductor device, characterized in that, have: bare die pads; Semiconductor chips, fixed on the bare die pads; and Sealing resin (18) covers at least a portion of the semiconductor chip and the die pads. The sealing resin It has a first side and a second side, wherein the second side is opposite to the first side in a first direction. It has a lower surface and an upper surface, the upper surface being opposite to the lower surface in a second direction. It has at least one first protrusion (18a) provided on the first side surface. It has at least one second protrusion (18b) provided on the second side surface. The cross-sectional area of the at least one first protrusion on the section perpendicular to the first direction is more than 10% of the maximum cross-sectional area of the sealing resin on the section perpendicular to the first direction. The cross-sectional area of the at least one second protrusion on the cross-section perpendicular to the first direction is more than 10% of the maximum cross-sectional area. The maximum cross-sectional area is 6mm². 2 above.
2. The semiconductor device as claimed in claim 1, characterized in that, The distance between the upper surface and the lower surface is more than 1 mm.
3. The semiconductor device as claimed in claim 1, characterized in that, The length of the at least one first protrusion in the second direction is 0.1 mm or more, and the length of the at least one second protrusion in the second direction is 0.1 mm or more.
4. The semiconductor device as claimed in claim 1, characterized in that, The shape of the cross section of the at least one first protrusion perpendicular to the first direction is a trapezoidal shape with opposite sides in the second direction as the upper and lower bases. The shape of the cross section of the at least one second protrusion perpendicular to the first direction is a trapezoidal shape with opposite sides in the second direction as the upper and lower bases.
5. The semiconductor device as claimed in claim 1, characterized in that, The sealing resin contains inorganic particles. The length of the at least one first protrusion in the second direction is more than twice the average particle size of the inorganic particles. The length of the second direction of the at least one second protrusion is more than twice the average particle size of the inorganic particles.
6. The semiconductor device as claimed in claim 5, characterized in that, The inorganic particles are silicon dioxide particles.
7. The semiconductor device as claimed in claim 1, characterized in that, There are two or more first protrusions. The number of at least one second protrusion is two or more.
8. The semiconductor device as claimed in claim 1, characterized in that, The sealing resin comprises epoxy resin.
9. The semiconductor device as claimed in claim 2, characterized in that, The length of the at least one first protrusion in the second direction is 0.1 mm or more, and the length of the at least one second protrusion in the second direction is 0.1 mm or more.
10. The semiconductor device as claimed in claim 9, characterized in that, The shape of the cross section of the at least one first protrusion perpendicular to the first direction is a trapezoidal shape with opposite sides in the second direction as the upper and lower bases. The shape of the cross section of the at least one second protrusion perpendicular to the first direction is a trapezoidal shape with opposite sides in the second direction as the upper and lower bases.