Image sensing device

Abstract

The present application relates to an image sensing device. An image sensing device includes a semiconductor substrate including pixel regions respectively corresponding to pixels, each pixel region including a photoelectric conversion region of a corresponding pixel that generates photocharges through conversion of incident light; and a plurality of first color filters disposed over a first surface of the semiconductor substrate and positioned over the pixel regions of the semiconductor substrate to transmit incident light of a first color to the pixel regions. The pixel regions corresponding to the first color filters have different substrate thicknesses from each other.

Claims

1. An image sensing device, the image sensing device comprising: A semiconductor substrate, the semiconductor substrate comprising pixel regions corresponding to pixels, each pixel region comprising a photoelectric conversion region of the corresponding pixel that generates photocharge through the conversion of incident light; as well as A plurality of first color filters are disposed above a first surface of the semiconductor substrate and above the pixel region of the semiconductor substrate to transmit incident light of a first color into the pixel region. The pixel regions corresponding to the first color filter have different substrate thicknesses, such that the pixels corresponding to the pixel regions have the same optical properties.

2. The image sensing device according to claim 1, wherein, The plurality of first color filters are arranged adjacent to each other in an (N×N) array, where N is a natural number equal to or greater than 2.

3. The image sensing device according to claim 1, further comprising: A plurality of second color filters are arranged adjacent to each other above the first surface of the semiconductor substrate and above the pixel region of the semiconductor substrate to transmit incident light of a second color into the pixel region. as well as A plurality of third color filters are arranged adjacent to each other above the first surface of the semiconductor substrate and above the pixel region of the semiconductor substrate to transmit incident light of a third color into the pixel region. in, The pixel regions corresponding to the second color filter are formed with different substrate thicknesses, and The pixel regions corresponding to the third color filter are formed with different substrate thicknesses.

4. The image sensing device according to claim 3, wherein, The first to the third color filters are arranged in a Bayer pattern.

5. The image sensing device according to claim 1, wherein, At least some of the pixel regions are defined by a plurality of trenches etched in a direction away from the first surface.

6. The image sensing device according to claim 5, wherein, The multiple trenches have different depths from each other.

7. The image sensing device according to claim 5, further comprising: An anti-reflective layer is formed between the semiconductor substrate and the plurality of first color filters and fills the plurality of trenches.

8. The image sensing device according to claim 1, wherein, The pixel region includes photoelectric conversion regions with different sizes from each other.

9. An image sensing device, the image sensing device comprising: A pixel array comprising multiple sub-pixel blocks, each sub-pixel block comprising multiple unit pixels that generate photocharge through photoelectric conversion of incident light corresponding to a specific color. in, The plurality of unit pixels of the sub-pixel block have pixel regions located within the substrate to perform photoelectric conversion of the incident light and have different thicknesses, such that the plurality of unit pixels of the sub-pixel block have the same optical properties.

10. The image sensing device according to claim 9, wherein, At least some of the pixel regions are defined by a plurality of trenches etched in a direction away from the substrate on the surface receiving the incident light.

11. The image sensing device according to claim 10, wherein, The multiple trenches have different depths from each other.

12. The image sensing device according to claim 10, wherein, Each of the plurality of unit pixels includes an anti-reflective layer formed above the substrate and filling the trench.

13. The image sensing device according to claim 9, wherein, The sub-pixel block includes: In the first sub-pixel block, multiple first unit pixels that generate photocharge through photoelectric conversion of incident light of the first color are arranged adjacent to each other. The second sub-pixel block, in which multiple second unit pixels, whose photoelectric charges are generated by the photoelectric conversion of incident light of the second color, are arranged adjacent to each other; and The third sub-pixel block is composed of multiple third unit pixels that generate photocharge through photoelectric conversion of incident light of the third color, arranged adjacent to each other.

14. The image sensing device according to claim 13, wherein, The first to the third sub-pixel blocks are arranged in a Bayer pattern.

15. The image sensing device according to claim 9, wherein, The plurality of unit pixels are arranged adjacent to each other in an (N×N) array, where N is a natural number equal to or greater than 2.

16. The image sensing apparatus according to claim 13, wherein, Each of the first to the third sub-pixel blocks includes multiple trenches.

17. The image sensing device according to claim 16, wherein, The multiple trenches have different depths from each other.

18. The image sensing device according to claim 9, wherein, The pixel region includes photoelectric conversion regions with different sizes from each other.

19. The image sensing device according to claim 9, wherein, The pixel array includes multiple sub-pixel arrays, and in, Subpixel blocks of the same color in each of the subpixel arrays are formed with the same pattern and substrate thickness.

20. The image sensing device according to claim 9, wherein, One of the plurality of unit pixels has a pixel region with a depth greater than the depth of the pixel region of the other unit pixels that define the corresponding groove.

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