Method for producing a conductive grid of a photovoltaic element and photovoltaic element

Abstract

The application provides a preparation method of a conductive grid of a photovoltaic element and the photovoltaic element, wherein the preparation method comprises the following steps: S1, covering an ITO film layer on one side of a photovoltaic substrate; S2, coating conductive glue with a required grid shape on the ITO film layer; S3, heating the conductive glue to sinter the conductive glue, so as to form a conductive grid; S4, depositing a SiN film layer on the ITO film layer and the conductive grid by a gas phase deposition method; S5, removing the SiN film layer deposited on the conductive grid by laser etching; S6, forming a conductive circuit on the conductive grid by electroplating copper or silver; and S7, removing the SiN film layer deposited outside the conductive circuit by laser etching and cleaning. The application simplifies the manufacturing process of the conductive grid and meets the demand of mass production.

Description

Technical Field

[0001] This invention relates to the field of photoelectric conversion technology, and in particular to a method for preparing a conductive grid for a photovoltaic element and a photovoltaic element. Background Technology

[0002] Compared with traditional power generation, solar power generation is a carbon-free power generation technology. Its power generation scale is not limited by region and can be applied to places such as rooftops, deserts and islands. The generated electricity can not only be used by the user, but also be transmitted to the power grid. It is one of the most widely used new energy power generation technologies at present.

[0003] One of the components used in solar power generation is the photovoltaic element. The photovoltaic element mainly consists of a substrate for supporting the device and a conductive grid on the substrate that has conductive properties.

[0004] The conductive grids on existing photovoltaic elements are all made by electroplating. However, making conductive grids by electroplating requires an additional cumbersome exposure and development step, which makes the manufacturing process complicated and cannot meet the needs of mass production. Summary of the Invention

[0005] To address the shortcomings of the aforementioned related technologies, this invention proposes a method for preparing conductive meshes for photovoltaic elements. This method solves the problem that existing photovoltaic elements use electroplating to fabricate conductive meshes, which requires additional exposure and development steps, resulting in a complex manufacturing process that cannot meet the needs of mass production.

[0006] To address the aforementioned technical problems, in a first aspect, the present invention provides a method for preparing a conductive grid for a photovoltaic element, comprising the following steps:

[0007] S1. Cover one side of the photovoltaic substrate with an ITO thin film layer;

[0008] S2. Coat the ITO thin film layer with conductive adhesive to form the desired mesh shape;

[0009] S3. The conductive adhesive is heated to sinter it, thereby forming a conductive mesh;

[0010] S4. A SiN thin film layer is deposited on the ITO thin film layer and the conductive grid by vapor deposition.

[0011] S5. The SiN thin film layer deposited on the conductive mesh is removed by laser etching;

[0012] S6. Conductive lines are formed on the conductive grid by electroplating copper or silver.

[0013] S7. Remove the SiN thin film layer deposited outside the conductive lines by laser etching and cleaning.

[0014] Preferably, the photovoltaic substrate has protruding electrode structures at both ends.

[0015] Preferably, the cross-section of the electrode structure is any one of rectangular, trapezoidal, and circular shapes.

[0016] Preferably, the conductive adhesive is a paste formed by mixing conductive metal powder and organic matter.

[0017] Preferably, the conductive metal powder is any one or a mixture of nickel powder, aluminum powder, silver powder and copper powder.

[0018] Preferably, the organic compound is any one or a mixture of epoxy resin, phenolic resin, ethylene glycol, terpineol, and propylene glycol.

[0019] Preferably, the conductive adhesive is applied to the ITO thin film layer using screen printing or dispensing techniques.

[0020] Preferably, the thickness of the SiN thin film layer is 10-200 nm.

[0021] Preferably, the material of the ITO thin film layer is InSn.

[0022] Secondly, the present invention provides a photovoltaic element, wherein the conductive grid on the photovoltaic element is made by the conductive grid preparation method of the photovoltaic element as described above.

[0023] Compared with existing technologies, the conductive grid preparation method for photovoltaic elements in this invention involves first covering an ITO thin film layer on a photovoltaic substrate, then coating the ITO thin film layer with a conductive adhesive to form the desired grid shape, heating the conductive adhesive to form a conductive grid, then depositing a SiN thin film layer on the ITO thin film layer and the conductive grid, removing the SiN thin film layer deposited on the conductive grid, forming conductive lines on the conductive grid, and finally removing the SiN thin film layer deposited outside the conductive lines to obtain the conductive grid for the photovoltaic element. This conductive grid preparation method simplifies the manufacturing process of the conductive grid by eliminating the need for exposure and development steps, thus meeting the needs of mass production. Attached Figure Description

[0024] The present invention will now be described in detail with reference to the accompanying drawings. The above and other aspects of the present invention will become clearer and more readily understood through the detailed description following the accompanying drawings. In the drawings:

[0025] Figure 1 A flowchart illustrating the steps of a method for preparing a conductive grid for a photovoltaic element, as provided in this embodiment of the invention;

[0026] Figure 2This is a process flow diagram of a method for preparing a conductive grid for a photovoltaic element, provided as an embodiment of the present invention.

[0027] 1. Photovoltaic substrate; 2. ITO thin film layer; 3. Conductive adhesive; 4. SiN thin film layer; 5. Conductive circuit. Detailed Implementation

[0028] The specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0029] The specific embodiments / examples described herein are specific implementations of the present invention, used to illustrate the concept of the invention, and are illustrative and exemplary, and should not be construed as limiting the implementation methods or scope of the present invention. In addition to the embodiments described herein, those skilled in the art can employ other obvious technical solutions based on the content disclosed in the claims and specification of this application. These technical solutions include those that make any obvious substitutions and modifications to the embodiments described herein, all of which are within the protection scope of the present invention.

[0030] This invention provides a method for preparing a conductive grid for a photovoltaic element, combined with... Figure 1 and Figure 2 As shown, it includes the following steps:

[0031] S1. Cover one side of the photovoltaic substrate 1 with an ITO thin film layer 2.

[0032] In this embodiment, the material of the ITO thin film layer 2 is InSn. Of course, depending on actual needs, the ITO thin film layer 2 can also be made of other materials.

[0033] In this embodiment, the photovoltaic substrate 1 has protruding electrode structures at both ends; the cross-section of the electrode structure can be any shape selected from rectangle, trapezoid, and circle. Of course, depending on actual needs, the cross-section of the electrode structure can also be designed into other shapes.

[0034] S2. Coat the ITO thin film layer 2 with conductive adhesive 3 to form the desired mesh shape.

[0035] In this embodiment, the conductive adhesive 3 is a paste formed by mixing conductive metal powder and organic matter.

[0036] In this embodiment, the conductive metal powder is any one or a mixture of conductive metal powders such as nickel powder (Ni powder), aluminum powder (Al powder), silver powder (Ag powder), and copper powder (Cu powder); the organic material is any one or a mixture of organic materials such as epoxy resin, phenolic resin, ethylene glycol, terpineol, and propylene glycol.

[0037] In this embodiment, the conductive adhesive 3 is coated onto the ITO thin film layer 2 using screen printing or dispensing techniques.

[0038] S3. The conductive adhesive 3 is heated to sinter it, thereby forming a conductive mesh.

[0039] S4. A SiN thin film layer 4 is deposited on the ITO thin film layer 2 and the conductive grid by vapor deposition.

[0040] In this embodiment, the thickness of the SiN thin film layer 4 is 10-200 nm.

[0041] In this embodiment, the vapor deposition method can be to use a gas containing thin film constituent atoms, such as microwave or radio frequency, to locally form plasma. At this time, because the plasma has strong chemical activity, it is easy to react, and the desired SiN thin film layer 4 can be deposited on the photovoltaic substrate 1.

[0042] S5. The SiN thin film layer 4 deposited on the conductive mesh is removed by laser etching.

[0043] S6. Conductive lines 5 are formed on the conductive grid by electroplating copper or silver.

[0044] S7. The SiN thin film layer 4 deposited outside the conductive line 5 is removed by laser etching and cleaning.

[0045] After the SiN thin film layer 4 deposited outside the conductive line 5 is removed, the preparation of the conductive grid of the photovoltaic element is completed.

[0046] Compared with the prior art, the conductive grid preparation method of the photovoltaic element in this embodiment first covers an ITO thin film layer 2 on the photovoltaic substrate 1, then coats a conductive adhesive 3 to form the desired grid shape on the ITO thin film layer 2, and heats the conductive adhesive 3 to form a conductive grid. Then, a SiN thin film layer 4 is deposited on the ITO thin film layer 2 and the conductive grid, and the SiN thin film layer 4 deposited on the conductive grid is removed. Then, conductive lines 5 are formed on the conductive grid, and finally, the SiN thin film layer 4 deposited outside the conductive lines 5 is removed, thereby obtaining the conductive grid of the photovoltaic element. Since this conductive grid preparation method does not require the exposure and development steps, it simplifies the manufacturing process of the conductive grid and meets the needs of mass production.

[0047] The present invention also provides an embodiment of a photovoltaic element, wherein the conductive grid on the photovoltaic element is made by the conductive grid preparation method of the photovoltaic element described in the above embodiment.

[0048] Since the conductive grid on the photovoltaic element in this embodiment is made by the conductive grid preparation method of the photovoltaic element in the above embodiment, it can also achieve the technical effect achieved by the conductive grid preparation method of the photovoltaic element in the above embodiment, and will not be described in detail here.

[0049] The above description is merely an embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural or procedural transformations made based on the content of the present invention specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of the present invention.

Claims

1. A method for preparing a conductive grid for a photovoltaic element, characterized in that, Includes the following steps: S1. Cover one side of the photovoltaic substrate with an ITO thin film layer; S2. Coat the ITO thin film layer with conductive adhesive to form the desired mesh shape; S3. The conductive adhesive is heated to sinter it, thereby forming a conductive mesh; S4. A SiN thin film layer is deposited on the ITO thin film layer and the conductive grid by vapor deposition. S5. The SiN thin film layer deposited on the conductive mesh is removed by laser etching; S6. Conductive lines are formed on the conductive grid by electroplating copper or silver. S7. Remove the SiN thin film layer deposited outside the conductive lines by laser etching and cleaning.

2. The method for preparing the conductive grid of a photovoltaic element as described in claim 1, characterized in that, The photovoltaic substrate has protruding electrode structures at both ends.

3. The method for preparing the conductive grid of a photovoltaic element as described in claim 2, characterized in that, The cross-section of the electrode structure can be any shape among rectangle, trapezoid, and circle.

4. The method for preparing the conductive grid of a photovoltaic element as described in claim 1, characterized in that, The conductive adhesive is a paste formed by mixing conductive metal powder and organic matter.

5. The method for preparing the conductive grid of a photovoltaic element as described in claim 4, characterized in that, The conductive metal powder is any one or more of nickel powder, aluminum powder, silver powder, and copper powder.

6. The method for preparing the conductive grid of a photovoltaic element as described in claim 4, characterized in that, The organic compound is any one or a mixture of epoxy resin, phenolic resin, ethylene glycol, terpineol, and propylene glycol.

7. The method for preparing the conductive grid of a photovoltaic element as described in claim 1, characterized in that, The conductive adhesive is applied to the ITO thin film layer using screen printing or dispensing techniques.

8. The method for preparing the conductive grid of a photovoltaic element as described in claim 1, characterized in that, The thickness of the SiN thin film layer is 10-200 nm.

9. The method for preparing the conductive grid of a photovoltaic element as described in claim 1, characterized in that, The material of the ITO thin film layer is InSn.

10. A photovoltaic element, characterized in that, The conductive grid on the photovoltaic element is made by the conductive grid preparation method of the photovoltaic element according to any one of claims 1 to 9.

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