A light-transmitting assembly of a thin-film solar cell and a method for manufacturing the same
Patent Information
- Application Number
- CN202211441243.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-11-17
- Publication Date
- 2026-10-30
- Estimated Expiration
- 2042-11-17
AI Technical Summary
[0004]本发明要解决的技术问题是提供一种薄膜太阳能电池的透光组件及其制备方法,解决现有的透光组件透光区域占用太多发电区域发电效率低且制备方式操作繁琐的问题
[0014]本发明对比现有技术有如下的有益效果:本发明提供的薄膜太阳能电池的透光组件及其制备方法,设置分割背电极层、光电转换层和缓冲层的第二刻槽使光线可以通过第二刻槽透过电池,实现透光,并通过填充在第二刻槽中的透明导电电极层将第一刻槽和第三刻槽分割形成的各个子电池在内部串联连接;不占用太多的发电区域,保证透光性及输出电性能;通过多次激光刻划来实现不同透光要求线宽,以达到不同的透光效果,应用范围更广;制备过程成本低、效率高、操作简单。
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Figure CN115832084B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of thin-film solar cell production, and more particularly to a light-transmitting component of a thin-film solar cell and its preparation method. Background Technology
[0002] Building-integrated photovoltaics (BIPV) is a new concept in solar power generation. Simply put, it involves installing solar photovoltaic arrays on the exterior surface of a building's envelope to provide electricity. BIPV can be divided into two main categories based on how the photovoltaic array is integrated with the building: one is the integration of the photovoltaic array with the building itself, and the other is the integration of the photovoltaic array with the building, such as photovoltaic tile roofs, photovoltaic curtain walls, and photovoltaic skylights. Of these two methods, the integration of the photovoltaic array with the building is a common form, especially the integration with the building roof. Because the integration of the photovoltaic array with the building does not occupy additional ground space, it is the best installation method for the widespread application of photovoltaic power generation systems in cities, and therefore has attracted much attention.
[0003] When solar photovoltaic (PV) arrays are used on building roofs, light transmission is sometimes required, especially in applications like sunrooms where sunlight needs to pass through. Solar PV arrays typically use thin-film solar cells, which consist of a substrate layer, a back electrode layer, a photoelectric conversion layer, a buffer layer, and a conductive electrode layer arranged sequentially. The back electrode layer is an opaque metal layer, making it difficult to fabricate a light-transmitting module. Therefore, a common approach is to create power generation and light transmission areas on the thin-film solar cell module. The light transmission areas are achieved by removing all film layers above the substrate layer. Additionally, positive and negative electrodes are used to connect the various power generation areas in series. This method sacrifices too much power generation area for light transmission, affecting power generation efficiency. Furthermore, the need for positive and negative electrodes to connect the power generation areas in series is cumbersome and prone to connection failure. Therefore, it is necessary to design a light-transmitting module that does not occupy too much power generation area and achieves series connection of the power generation areas within the module, along with its fabrication method. Summary of the Invention
[0004] The technical problem to be solved by the present invention is to provide a light-transmitting component of a thin-film solar cell and its preparation method, thereby solving the problems of existing light-transmitting components having too much light-transmitting area occupying too much power generation area, resulting in low power generation efficiency and cumbersome preparation methods.
[0005] The technical solution adopted by the present invention to solve the above-mentioned technical problems is to provide a light-transmitting component for a thin-film solar cell, comprising a light-transmitting component body, wherein the light-transmitting component body includes a substrate layer, a back electrode layer, a photoelectric conversion layer, a buffer layer, and a transparent conductive electrode layer arranged sequentially. The light-transmitting component body is provided with multiple sets of groove structures, the groove structures dividing the light-transmitting component body into multiple sub-cells and connecting them in series through the transparent conductive electrode layer; the groove structure includes a first groove, a second groove, and a third groove arranged sequentially; the first groove divides the back electrode layer and is filled with the photoelectric conversion layer; the second groove divides the back electrode layer, the photoelectric conversion layer, and the buffer layer and is filled with the transparent conductive electrode layer; the third groove divides the photoelectric conversion layer, the buffer layer, and the transparent conductive electrode layer; the area where the second groove is located forms a light-transmitting region.
[0006] Furthermore, the multiple sets of groove structures are arranged in parallel and spaced apart; the first groove, the second groove, and the third groove are arranged in parallel and spaced apart.
[0007] Furthermore, the substrate layer is a soda-lime glass substrate, the back electrode layer is a Mo layer, the photoelectric conversion layer is a CIGS film layer, the buffer layer is a CdS film layer, and the transparent conductive electrode layer is a transparent BZO conductive film layer.
[0008] Furthermore, a fourth groove is provided around the perimeter of the light-transmitting component body. The fourth groove is obtained by removing the back electrode layer, the photoelectric conversion layer, the buffer layer, and the transparent conductive electrode layer.
[0009] Furthermore, an encapsulation layer and a protective layer are sequentially disposed on the side of the transparent conductive electrode layer away from the buffer layer, and the third groove is filled with the encapsulation layer. The encapsulation layer is made of EVA or PVB, and the protective layer is made of tempered glass.
[0010] Furthermore, the light-transmitting area occupies 10%-40% of the total area of the light-transmitting component.
[0011] Another technical solution adopted by the present invention to solve the above-mentioned technical problems is to provide a method for fabricating a light-transmitting component of a thin-film solar cell, comprising the following steps: S1: using a soda-lime glass substrate as a substrate layer, and sputtering a Mo layer on the substrate layer as a back electrode layer; S2: scribing the back electrode layer to form a first groove, the first groove achieving insulation between the segmented regions of the back electrode layer; S3: forming a CIGS film layer on the back electrode layer as a photoelectric conversion layer by sputtering and selenization, and simultaneously filling the first groove with the CIGS film layer; S4: depositing a CdS layer on the photoelectric conversion layer as a buffer layer by a chemical bath. S5: A second groove is formed by etching the buffer layer, the photoelectric conversion layer, and the back electrode layer in a direction parallel to the first groove, and the second groove forms a light-transmitting area; S6: A transparent BZO conductive film layer is formed on the buffer layer by chemical vapor deposition as a transparent conductive electrode layer, and the transparent BZO conductive film layer is filled in the second groove; S7: A third groove is formed by etching the transparent conductive electrode layer, the buffer layer, and the photoelectric conversion layer; S8: An insulating fourth groove is formed by laser etching the transparent conductive electrode layer, the buffer layer, the photoelectric conversion layer, and the back electrode layer on the periphery of the light-transmitting component body.
[0012] Furthermore, after step S8, the following steps are also included: S9: using EVA or PVB as encapsulation material to encapsulate on one side of the transparent conductive electrode layer of the light-transmitting component body to form an encapsulation layer; at the same time, the encapsulation layer is filled into the third groove; S10: tempered glass is provided as a protective layer in the encapsulation layer.
[0013] Further, in step S2, a P1 532nm green laser is used to form the first groove; in step S5, a P2 532nm green laser is used to form the second groove; in step S7, a P3 mechanical scribing device is used to form the third groove; and in step S8, a P4 1064nm laser is used to form the fourth groove.
[0014] Compared with the prior art, the present invention has the following advantages: The thin-film solar cell light-transmitting component and its preparation method provided by the present invention are configured with a second groove that divides the back electrode layer, photoelectric conversion layer and buffer layer, so that light can pass through the cell through the second groove, thus achieving light transmission. The individual sub-cells formed by the division of the first groove and the third groove are connected in series internally by a transparent conductive electrode layer filled in the second groove. It does not occupy too much power generation area, ensuring light transmission and output electrical performance. Different light transmission linewidths can be achieved by multiple laser scribing to achieve different light transmission effects, thus expanding the application range. The preparation process is low-cost, highly efficient and simple to operate. Attached Figure Description
[0015] Figure 1 This is a schematic diagram of the light-transmitting component structure of a thin-film solar cell in an embodiment of the present invention;
[0016] Figure 2 This is a top view of the light-transmitting component of the thin-film solar cell in an embodiment of the present invention;
[0017] Figure 3 This is a flowchart illustrating the fabrication method of the light-transmitting component of the thin-film solar cell in an embodiment of the present invention.
[0018] In the picture:
[0019] 101. Substrate layer; 102. Back electrode layer; 103. Photoelectric conversion layer; 104. Buffer layer; 105. Transparent conductive electrode layer; 106. Encapsulation layer; 107. Protective layer; 108. First groove; 109. Second groove; 110. Third groove; 111. Fourth groove. Detailed Implementation
[0020] The present invention will now be further described with reference to the accompanying drawings and embodiments.
[0021] Figure 1 This is a schematic diagram of the light-transmitting component of a thin-film solar cell and its fabrication method in an embodiment of the present invention.
[0022] Please see Figure 1 The light-transmitting component of the thin-film solar cell according to an embodiment of the present invention includes a light-transmitting component body, which includes a substrate layer 101, a back electrode layer 102, a photoelectric conversion layer 103, a buffer layer 104, and a transparent conductive electrode layer 105 arranged sequentially. The light-transmitting component body has multiple sets of groove structures, which divide the light-transmitting component body into multiple sub-cells and connect them in series through the transparent conductive electrode layer 105. The groove structure includes a first groove 108, a second groove 109, and a third groove 110 arranged sequentially. The first groove 108 divides the back electrode layer 102 and is filled with the photoelectric conversion layer 103. The second groove 109 divides the back electrode layer 102, the photoelectric conversion layer 103, and the buffer layer 104 and is filled with the transparent conductive electrode layer 105. The third groove 110 divides the photoelectric conversion layer 103, the buffer layer 104, and the transparent conductive electrode layer 105. The area where the second groove 109 is located forms a light-transmitting region.
[0023] Specifically, multiple sets of groove structures are arranged in parallel and spaced apart; the first groove 108, the second groove 109, and the third groove 110 are arranged in parallel and spaced apart. The substrate layer 101 is a soda-lime glass substrate, the back electrode layer 102 is a Mo (molybdenum) layer; the photoelectric conversion layer 103 is a CIGS (copper indium gallium selenide) film layer; the buffer layer 104 is a CdS (cadmium sulfide) film layer; and the transparent conductive electrode layer 105 is a transparent BZO (BaZrO3) conductive film layer.
[0024] Please see Figure 1 and Figure 2 The light-transmitting component of the thin-film solar cell in this embodiment of the invention has a fourth groove 111 provided around the perimeter of the light-transmitting component body. The fourth groove 111 is obtained by removing the back electrode layer 102, the photoelectric conversion layer 103, the buffer layer 104 and the transparent conductive electrode layer 105. The fourth groove 111 achieves insulation around the perimeter of the light-transmitting component body.
[0025] Preferably, an encapsulation layer 106 and a protective layer 107 are sequentially disposed on the side of the transparent conductive electrode layer 105 away from the buffer layer 104. The third groove 110 is filled with the encapsulation layer 106, which is made of EVA (ethylene-vinyl acetate copolymer) or PVB (polyvinyl butyral). The protective layer 107 is made of tempered glass. The encapsulation layer 106 and the protective layer 107 protect the light-transmitting component body and extend its service life.
[0026] Specifically, the light-transmitting area accounts for 10%-40% of the total area of the light-transmitting component. Different light transmission requirements can be achieved by adjusting the width of the second groove 109, that is, by adjusting the number of laser scribing operations to adjust the groove line width; the width of a single light-transmitting line is 300-3000μm.
[0027] Please see Figure 3 The method for preparing the light-transmitting component of the thin-film solar cell according to an embodiment of the present invention includes the following steps:
[0028] S1: A soda-lime glass substrate is used as the substrate layer 101, and a Mo layer is sputtered on the substrate layer 101 as the back electrode layer 102.
[0029] S2: A P1 532nm green laser is used to etch the back electrode layer 102 to form a first groove 108, and the first groove 108 achieves insulation between the segmented regions of the back electrode layer 102.
[0030] S3: A CIGS film is formed on the back electrode layer 102 by sputtering and selenization as a photoelectric conversion layer 103, and the CIGS film is filled in the first groove 108.
[0031] S4: A CdS layer is deposited on the photoelectric conversion layer 103 using a chemical water bath as a buffer layer 104;
[0032] S5: A P2 532nm green laser is used to etch the buffer layer 104, photoelectric conversion layer 103 and back electrode layer 102 in a direction parallel to the first groove 108 to form a second groove 109, and the second groove 109 forms a light-transmitting area.
[0033] S6: A transparent BZO conductive film layer is formed on the buffer layer 104 by chemical vapor deposition as a transparent conductive electrode layer 105. At the same time, a transparent BZO conductive film layer is filled in the second groove 109 to connect the regions of the back electrode layer 102 divided by the first groove 108 in series.
[0034] S7: The P3 mechanical scribing equipment scribing the transparent conductive electrode layer 105, buffer layer 104 and photoelectric conversion layer 103 forms a third groove 110;
[0035] S8: A P4 1064nm laser is used to laser scribing the transparent conductive electrode layer 105, buffer layer 104, photoelectric conversion layer 103 and back electrode layer 102 around the edges of the light-transmitting component body to form an insulating fourth groove 111.
[0036] S9: Using EVA or PVB as encapsulation material, encapsulation is performed on one side of the transparent conductive electrode layer 105 of the light-transmitting component body to form an encapsulation layer 106; at the same time, the encapsulation layer 106 is filled in the third groove 110.
[0037] S10: Tempered glass is provided as a protective layer 107 in the encapsulation layer 106.
[0038] In summary, the light-transmitting component and its fabrication method of the thin-film solar cell of the present invention, by setting a second groove 109 that divides the back electrode layer 102, the photoelectric conversion layer 103, and the buffer layer 104, allows light to pass through the cell through the second groove 109, thus achieving light transmission. Furthermore, the individual sub-cells formed by the division of the first groove 108 and the third groove 110 are internally connected in series by a transparent conductive electrode layer 105 filled in the second groove 109. This method does not occupy too much power generation area, ensuring light transmittance and output electrical performance. Different light transmission linewidths can be achieved through multiple laser scribing processes to achieve different light transmission effects, thus broadening the application range. The fabrication process is low-cost, highly efficient, and simple to operate.
[0039] Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be defined by the claims.
Claims
1. A light-transmitting component for a thin-film solar cell, characterized in that, The device includes a light-transmitting component body, which comprises a substrate layer, a back electrode layer, a photoelectric conversion layer, a buffer layer, and a transparent conductive electrode layer arranged sequentially. The light-transmitting component body has multiple sets of groove structures, which divide the light-transmitting component body into multiple sub-cells and connect them in series through the transparent conductive electrode layer. Each groove structure includes a first groove, a second groove, and a third groove arranged sequentially. The first groove divides the back electrode layer and is filled with the photoelectric conversion layer. The second groove divides the back electrode layer, the photoelectric conversion layer, and the buffer layer, and is filled with the transparent conductive electrode layer. The third groove divides the photoelectric conversion layer, the buffer layer, and the transparent conductive electrode layer; the area where the second groove is located forms a light-transmitting area; The substrate is a soda-lime glass substrate, and the back electrode layer is a Mo layer; the second groove is formed by etching with a 532nm green laser; the light-transmitting area occupies 10%-40% of the area of the light-transmitting component body.
2. The light-transmitting component of the thin-film solar cell as described in claim 1, characterized in that, The multiple sets of groove structures are arranged in parallel and at intervals; the first groove, the second groove, and the third groove are arranged in parallel and at intervals.
3. The light-transmitting component of the thin-film solar cell as described in claim 1, characterized in that, The photoelectric conversion layer is a CIGS film; the buffer layer is a CdS film; and the transparent conductive electrode layer is a transparent BZO conductive film.
4. The light-transmitting component of the thin-film solar cell as described in claim 1, characterized in that, The light-transmitting component body has a fourth groove around its four edges, which is obtained by removing the back electrode layer, photoelectric conversion layer, buffer layer and transparent conductive electrode layer.
5. The light-transmitting component of the thin-film solar cell as described in claim 1, characterized in that, An encapsulation layer and a protective layer are sequentially disposed on the side of the transparent conductive electrode layer away from the buffer layer. The third groove is filled with the encapsulation layer. The encapsulation layer is made of EVA or PVB, and the protective layer is made of tempered glass.
6. A method for preparing a light-transmitting component of a thin-film solar cell as described in any one of claims 1-5, characterized in that, Includes the following steps: S1: A soda-lime glass substrate is used as the base layer, and a Mo layer is sputtered on the base layer as the back electrode layer. S2: The back electrode layer is etched to form a first groove, and the first groove achieves insulation between the segmented regions of the back electrode layer; S3: A CIGS film layer is formed on the back electrode layer by sputtering and selenization as a photoelectric conversion layer, and the CIGS film layer is filled in the first groove. S4: A CdS layer is deposited on the photoelectric conversion layer as a buffer layer using a chemical water bath; S5: The buffer layer, the photoelectric conversion layer and the back electrode layer are etched in a direction parallel to the first groove to form a second groove, and the second groove forms a light-transmitting area; S6: A transparent BZO conductive film layer is formed on the buffer layer by chemical vapor deposition as a transparent conductive electrode layer. At the same time, the transparent BZO conductive film layer is filled in the second groove. S7: The transparent conductive electrode layer, buffer layer and photoelectric conversion layer are etched to form a third groove; S8: Laser scribing is performed on the transparent conductive electrode layer, buffer layer, photoelectric conversion layer and back electrode layer around the periphery of the light-transmitting component body to form an insulating fourth groove.
7. The method for preparing the light-transmitting component of a thin-film solar cell as described in claim 6, characterized in that, The following steps are included after step S8: S9: An encapsulation layer is formed by encapsulating one side of the transparent conductive electrode layer of the light-transmitting component body using EVA or PVB as the encapsulation material; at the same time, the encapsulation layer is filled into the third groove. S10: Tempered glass is provided as a protective layer in the encapsulation layer.
8. The method for preparing the light-transmitting component of a thin-film solar cell as described in claim 6, characterized in that, In step S2, a P1 532nm green laser is used to form the first groove; in step S7, a P3 mechanical scribing device is used to form the third groove; and in step S8, a P4 1064nm laser is used to form the fourth groove.
Citation Information
Patent Citations
CIGS (Copper Indium Gallium Selenide)-based thin-film solar cell and manufacturing method thereof
CN105023958A
Flexile inner-connected CIGS solar cell and preparation method thereof
CN110364579A