存储设备
By designing overlapping selector electrode structures and continuous selector material layers in the storage cell, the problem of insufficient selector conduction current was solved, the write current and read current were improved, and better storage device performance was achieved.
CN115835766BActive Publication Date: 2026-07-17KIOXIA CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- KIOXIA CORP
- Filing Date
- 2022-06-30
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In existing non-volatile storage devices, the selector's on-current is insufficient, resulting in suboptimal write and read current.
Method used
In the memory cell, the first and second electrodes of the selector are designed to overlap, and the selector material layers are provided continuously to satisfy a specific thickness relationship in order to increase the cross-sectional area of the current path.
Benefits of technology
The selector's on-current was increased, as were the write and read currents, resulting in superior storage device performance.
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Figure CN115835766B_ABST
Abstract
实施例提供了能够增加选择器的导通电流的存储设备。根据一个实施例，一种存储设备包括：第一存储单元，在第一方向上与第一存储单元相邻的第二存储单元，以及在第二方向上与第一存储单元相邻的第三存储单元，第一、第二和第三存储单元中的每一个包括电阻变化存储元件和开关元件。开关元件包括第一电极、第二电极、以及第一电极与第二电极之间的开关材料层，当从第一方向观看时，第一电极和第二电极彼此重叠，第一存储单元和第二存储单元中的第一电极彼此分开，并且第一存储单元和第二存储单元中的开关材料层被连续地提供。
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