Display substrate, preparation method and repairing method thereof, and display device
By setting a connection part on the OLED display substrate, a reliable connection between the anode and the driving transistor is achieved, which solves the problem that dark spot defects caused by small foreign objects are difficult to repair, improves the repair success rate and reduces the scrap rate.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD
- Filing Date
- 2022-09-08
- Publication Date
- 2026-07-21
AI Technical Summary
In existing OLED display substrates, dark spot defects caused by small foreign objects are difficult to repair, and existing repair methods have a low success rate, which can easily lead to product scrap.
A connection part is provided on the display substrate, which is connected to the anode and the second electrode of the driving transistor. The connection is achieved by laser welding to ensure accurate isolation of foreign object sub-units and restore normal light emission.
It improved the success rate of repairing dark spot defects, reduced the product scrap rate, and saved production costs.
Smart Images

Figure CN115843196B_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of display technology, and in particular to a display substrate, its preparation and repair methods, and a display device. Background Technology
[0002] Active-matrix organic light-emitting diode (AMOLED) displays boast advantages such as wide color gamut, high resolution, and individual pixel control, leading to their increasing market share. However, during the fabrication of OLED display substrates, residual impurities can easily cause localized short circuits between the anode and cathode, resulting in dark spot defects. Currently, when foreign matter impurities appear in OLED display substrates, the light-emitting unit containing the impurity is isolated to ensure that other light-emitting units are not affected. However, when the impurity is small, its location is difficult to pinpoint, resulting in a low success rate for repair.
[0003] The inventors of this application have discovered that existing display substrates have a problem where dark spot defects caused by small foreign objects are difficult to repair. Summary of the Invention
[0004] The following is an overview of the subject matter described in detail herein. This overview is not intended to limit the scope of the claims.
[0005] This disclosure provides a display substrate, its preparation and repair methods, and a display device to solve the problem that dark spot defects in display substrates caused by small foreign objects are difficult to repair.
[0006] In a first aspect, embodiments of this disclosure provide a display substrate, including a driving circuit layer and an anode layer stacked on a substrate. The driving circuit layer includes a driving transistor, and the anode layer includes n anodes, each of which is connected to a second electrode of the driving transistor. The display substrate further includes n-1 connection portions disposed between the anodes and the driving transistors, for establishing a connection between the anodes and the second electrodes of the driving transistors when repairing dark spot defects. The n is an integer greater than or equal to 2.
[0007] In one exemplary embodiment, on a plane parallel to the display substrate, the display substrate includes a plurality of pixel units, each pixel unit including n sub-units, each sub-unit including an anode, and the pixel unit including a driving transistor; the n-1 connection portions are disposed in one-to-one correspondence with the n-1 anodes among the n anodes; the connection portion has a first end and a second end, the first end is electrically connected to the anode or configured to be soldered to the anode, the second end is electrically connected to the second electrode of the driving transistor or configured to be soldered to the second electrode of the driving transistor, and the connection portion does not electrically connect the anode and the second electrode of the driving transistor before soldering.
[0008] In one exemplary embodiment, the orthographic projection of the connection portion on the substrate and the orthographic projection of the anode on the substrate have a first overlapping region; the orthographic projection of the connection portion on the substrate and the orthographic projection of the second electrode of the driving transistor on the substrate have a second overlapping region.
[0009] In one exemplary embodiment, the orthographic projection of the first overlapping region onto the substrate includes the orthographic projection of the second overlapping region onto the substrate; or, the orthographic projection of the second overlapping region onto the substrate includes the orthographic projection of the first overlapping region onto the substrate.
[0010] In one exemplary embodiment, the connecting portion and the anode are integrally formed, and the second end is configured to be welded to the second electrode of the driving transistor.
[0011] In one exemplary embodiment, the connection portion is integrally structured with the second electrode of the driving transistor, and the first end is configured to be weldable to the anode.
[0012] Secondly, embodiments of this disclosure provide a display device, including a display substrate as described above.
[0013] Thirdly, embodiments of this disclosure provide a method for fabricating a display substrate, the method comprising: forming a driving circuit layer on a substrate, the driving structure layer including a driving transistor; forming n-1 connection portions on the driving circuit layer; forming an anode layer on the connection portions, the anode layer including n anodes, the n anodes being respectively connected to the second electrode of the driving transistor; wherein, the connection portions are disposed between the anodes and the driving transistor, for establishing a connection between the anodes and the second electrode of the driving transistor when repairing dark spot defects; and n is an integer greater than or equal to 2.
[0014] Fourthly, embodiments of this disclosure provide a method for repairing a display substrate. The display substrate includes a driving circuit layer and an anode layer stacked on a substrate. The driving circuit layer includes a driving transistor, and the anode layer includes n anodes, each of which is connected to a second electrode of the driving transistor. The display substrate also includes n-1 connection portions disposed between the anodes and the driving transistors, where n is an integer greater than or equal to 2. When repairing a dark spot defect, the repair method includes: disconnecting the connection between the anodes and the second electrode of the driving transistors; and, if the dark spot defect is not successfully repaired, establishing a connection between the anodes and the driving transistors using the connection portions.
[0015] In one exemplary embodiment, on a plane parallel to the display substrate, the display substrate includes a plurality of pixel units, each pixel unit including n sub-units, each sub-unit including an anode, and the pixel unit including the driving transistor; the n-1 connection portions are provided one-to-one with the n-1 anodes among the n anodes; the step of establishing a connection between the anode and the second electrode of the driving transistor using the connection portions when the dark spot defect is not successfully repaired includes: after disconnecting the connection between the anode and the second electrode of the driving transistor, determining whether the remaining sub-units in the pixel unit emit light normally; if the remaining sub-units in the pixel unit cannot emit light normally, determining that the dark spot defect has not been successfully repaired; and establishing a connection between the anode and the second electrode of the driving transistor using the connection portions.
[0016] In an exemplary embodiment, the connection portion has a first end and a second end; the orthographic projection of the connection portion on the substrate and the orthographic projection of the anode on the substrate have a first overlapping region; the orthographic projection of the connection portion on the substrate and the orthographic projection of the second electrode of the driving transistor on the substrate have a second overlapping region; the connection of the anode and the second electrode of the driving transistor using the connection portion includes: irradiating the first overlapping region and the second overlapping region with a laser from the side of the substrate away from the driving circuit layer, welding the first end to the anode, and welding the second end to the second electrode of the driving transistor.
[0017] In one exemplary embodiment, the connecting portion and the anode are integrally formed. The step of establishing a connection between the anode and the second electrode of the driving transistor using the connecting portion includes: irradiating the second overlapping region with a laser from the side of the substrate away from the driving circuit layer, and welding the second end to the second electrode of the driving transistor.
[0018] In one exemplary embodiment, the connecting portion and the second electrode of the driving transistor are integrally structured. The step of establishing a connection between the anode and the second electrode of the driving transistor using the connecting portion includes: irradiating the first overlapping region with a laser from the side of the substrate away from the driving circuit layer, and welding the first end and the anode.
[0019] The display substrate proposed in this disclosure provides a connection between the anode and the driving transistor. This connection establishes a link between the anode and the second electrode of the driving transistor, allowing isolated sub-units to regain light emission during dark spot repair, thus avoiding product scrap caused by incorrect isolation. This solves the problem of difficult repair of dark spot defects in display substrates caused by small foreign objects.
[0020] After reading and understanding the accompanying diagrams and detailed descriptions, the other aspects can be understood. Attached Figure Description
[0021] The accompanying drawings are provided to further understand the technical solutions of this disclosure and constitute a part of the specification. They are used together with the embodiments of this disclosure to explain the technical solutions of this disclosure and do not constitute a limitation on the technical solutions of this disclosure.
[0022] Figure 1 This is a schematic diagram of the structure of some film layers in an OLED.
[0023] Figure 2 for Figure 1 The diagram shows a foreign substance incorporated into the membrane layer.
[0024] Figure 3 This is a schematic diagram of the equivalent structure of the display substrate according to an embodiment of the present disclosure;
[0025] Figure 4 This is a schematic diagram of the structure of the first anode and the second anode in an exemplary embodiment;
[0026] Figure 5 This is a schematic diagram of the structure of the first anode and the second anode in yet another exemplary embodiment;
[0027] Figure 6 This is a schematic diagram of the structure of the first anode and the second anode in yet another exemplary embodiment;
[0028] Figure 7 This is a schematic diagram of the structure of the first anode and the second anode in yet another exemplary embodiment;
[0029] Figure 8 In an exemplary embodiment, the display substrate is along... Figure 3 A cross-sectional view of the extension direction of the first signal line;
[0030] Figure 9In an exemplary embodiment, in the disconnected state, the display substrate moves along... Figure 3 Cross-sectional view of the connecting part in the extension direction;
[0031] Figure 10 This is a schematic diagram of the equivalent circuit of the pixel driving circuit in an exemplary embodiment;
[0032] Figure 11 This is a timing diagram of the pixel driving circuit in an exemplary embodiment;
[0033] Figure 12 This is a schematic diagram of a method for repairing a display substrate provided in an exemplary embodiment.
[0034] Explanation of reference numerals in the attached figures:
[0035] 10 - Gate line; 20 - Data line; 40 - Driver transistor;
[0036] 41-First signal line; 42-Second signal line; 43-Connector;
[0037] 60 - First anode; 70 - Second anode; 100 - Substrate;
[0038] 101 - First insulating layer; 102 - Second insulating layer; 103 - Third insulating layer;
[0039] 104 - Planarization layer; 401 - Active layer; 402 - Gate electrode;
[0040] 403 - First pole; 404 - Second pole. Detailed Implementation
[0041] The embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Note that the embodiments can be implemented in many different forms. Those skilled in the art will readily understand that the methods and content can be varied in many ways without departing from the spirit and scope of this disclosure. Therefore, this disclosure should not be construed as limited to the contents described in the following embodiments. Without conflict, the embodiments and features in the embodiments of this disclosure can be arbitrarily combined with each other.
[0042] The scale of the figures in this disclosure can be used as a reference in actual manufacturing processes, but is not limited thereto. For example, the aspect ratio of the channel, the thickness and spacing of each film layer, and the width and spacing of each signal line can be adjusted according to actual needs. The number of pixels in the display substrate and the number of sub-pixels in each pixel are not limited to the quantities shown in the figures. The figures described in this disclosure are only schematic diagrams of the structure, and one aspect of this disclosure is not limited to the shapes or values shown in the figures.
[0043] The ordinal numbers “first,” “second,” and “third” used in this specification are used to avoid confusion among the constituent elements, not to limit their quantity.
[0044] In this specification, for convenience, terms such as "middle," "upper," "lower," "front," "rear," "vertical," "horizontal," "top," "bottom," "inner," and "outer" are used to indicate orientation or positional relationships in conjunction with the accompanying drawings. This is solely for the purpose of facilitating the description and simplification, and does not imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation of this disclosure. The positional relationships of the constituent elements may be appropriately varied depending on the orientation of each constituent element being described. Therefore, the use of terms not limited to those described in the specification may be appropriately replaced as needed.
[0045] In this specification, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they may refer to a fixed connection, a detachable connection, or an integral connection; a mechanical connection or an electrical connection; a direct connection, an indirect connection via an intermediate component, or a connection within two components. Those skilled in the art will understand the specific meaning of these terms in this disclosure based on the specific circumstances.
[0046] In this specification, a transistor is a device that includes at least three terminals: a gate electrode, a drain electrode, and a source electrode. A transistor has a channel region between the drain electrode (drain electrode terminal, drain region, or drain electrode) and the source electrode (source electrode terminal, source region, or source electrode), and current can flow through the drain electrode, the channel region, and the source electrode. Note that in this specification, the channel region refers to the region through which current primarily flows.
[0047] In this specification, the first electrode can be the drain electrode and the second electrode can be the source electrode, or vice versa. In cases where transistors with opposite polarities are used or the current direction changes during circuit operation, the functions of the "source electrode" and "drain electrode" may sometimes be interchanged. Therefore, in this specification, the "source electrode" and "drain electrode" can be interchanged, and the "source terminal" and "drain terminal" can be interchanged.
[0048] In this specification, "electrical connection" includes the situation where components are connected together by elements that have a certain electrical function. There are no particular limitations on what constitutes an "electrical function," as long as it allows for the transmission of electrical signals between the connected components. Examples of "electrical functions" include not only anodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other elements with various functions.
[0049] In this specification, "parallel" refers to the state where the angle formed by two straight lines is greater than or equal to -10° and less than 10°, and therefore also includes the state where the angle is greater than or equal to -5° and less than 5°. Similarly, "perpendicular" refers to the state where the angle formed by two straight lines is greater than or equal to 80° and less than 100°, and therefore also includes the state where the angle is greater than or equal to 85° and less than 95°.
[0050] In this specification, the terms "film" and "layer" may be interchanged. For example, "conductive layer" may sometimes be replaced with "conductive film." Similarly, "insulating film" may sometimes be replaced with "insulating layer."
[0051] In this specification, triangles, rectangles, trapezoids, pentagons, or hexagons are not strictly defined; they can be approximate triangles, rectangles, trapezoids, pentagons, or hexagons. Small deformations due to tolerances are possible, as are chamfered corners, curved edges, and other variations.
[0052] In this disclosure, “about” means a value that is not strictly limited and allows for process and measurement errors.
[0053] Dark spot defects may exist during the fabrication process of OLED display substrates. The cause of dark spots is that conductive foreign objects connect the anode and cathode of the OLED pixel unit, preventing the OLED pixel unit from emitting light normally. Figure 1 This is a schematic diagram of the structure of some film layers in an OLED. Figure 2 for Figure 1 A schematic diagram showing the incorporation of foreign matter into the membrane layer. (See diagram for example.) Figure 1 and Figure 2 As shown, part of the film layer includes a cathode, an anode, and a light-emitting layer disposed between the cathode and the anode. When foreign matter is introduced into the light-emitting layer, the foreign matter will simultaneously contact the cathode and the anode, causing the cathode and anode to conduct electricity. The light-emitting layer cannot emit light normally, thus producing a dark spot defect.
[0054] In some technologies, to reduce the impact of foreign objects on pixel units, a design is adopted where a pixel unit is divided into multiple sub-units. When a foreign object appears, the sub-unit containing the foreign object is isolated, so that the other sub-units within that pixel unit are unaffected. Isolation of sub-units is achieved by using a laser to sever the connection between the sub-unit and its corresponding driving transistor. However, the inventors of this application have found that this method is effective for larger, easily identifiable foreign objects. When the foreign object is too small or its location is difficult to determine, only one sub-unit can be randomly isolated. This repair method is indiscriminate and cannot guarantee a success rate. If the isolated sub-unit is one without a foreign object, more sub-units will fail to emit light normally, resulting in more dark spots, leading to repair failure and product scrap.
[0055] This disclosure provides a display substrate including a driving circuit layer and an anode layer stacked on a substrate. The driving circuit layer includes a driving transistor, and the anode layer includes n anodes, each of which is connected to a second electrode of the driving transistor. The display substrate also includes n-1 connection portions disposed between the anodes and the driving transistors, used to establish a connection between the anodes and the second electrodes of the driving transistors when repairing dark spot defects. The n is an integer greater than or equal to 2.
[0056] The display substrate proposed in this disclosure provides a connection between the anode and the driving transistor. This connection establishes a link between the anode and the second electrode of the driving transistor, allowing isolated sub-units to regain light emission during dark spot repair, thus avoiding product scrap caused by incorrect isolation. This solves the problem of difficult repair of dark spot defects in display substrates caused by small foreign objects.
[0057] In one exemplary embodiment, on a plane parallel to the display substrate, the display substrate includes a plurality of pixel units, each pixel unit including n sub-units, each sub-unit including an anode, and the pixel unit including a driving transistor; the n-1 connection portions are disposed in one-to-one correspondence with the n-1 anodes among the n anodes; the connection portion has a first end and a second end, the first end is electrically connected to the anode or configured to be soldered to the anode, the second end is electrically connected to the second electrode of the driving transistor or configured to be soldered to the second electrode of the driving transistor, and the connection portion does not electrically connect the anode and the second electrode of the driving transistor before soldering.
[0058] In one exemplary embodiment, the orthographic projection of the connection portion on the substrate and the orthographic projection of the anode on the substrate have a first overlapping region; the orthographic projection of the connection portion on the substrate and the orthographic projection of the second electrode of the driving transistor on the substrate have a second overlapping region.
[0059] In one exemplary embodiment, the orthographic projection of the first overlapping region onto the substrate includes the orthographic projection of the second overlapping region onto the substrate; or, the orthographic projection of the second overlapping region onto the substrate includes the orthographic projection of the first overlapping region onto the substrate.
[0060] In one exemplary embodiment, the connecting portion and the anode are integrally formed, and the second end is configured to be welded to the second electrode of the driving transistor.
[0061] In one exemplary embodiment, the connection portion is integrally structured with the second electrode of the driving transistor, and the first end is configured to be weldable to the anode.
[0062] Figure 3This is a schematic diagram of the equivalent structure of the display substrate according to an embodiment of this disclosure. Figure 3 As shown, the main structure of the display substrate includes gate lines 10 and data lines 20, which intersect vertically to define a plurality of matrix-arranged pixel units. Each pixel unit is the most basic light-emitting unit, emitting light of a single color, also known as a subpixel. Typically, three pixel units, such as red, green, and blue pixel units, constitute a pixel. This disclosure does not limit the number of pixel units contained in a single pixel or the color of each pixel unit. In this embodiment, each pixel unit is divided into two sub-units, and each sub-unit is provided with an anode, namely a first anode 60 and a second anode 70. The anodes in the two sub-units are independent of each other. Each pixel unit includes a driving transistor 40, a first anode 60, and a second anode 70. The driving transistor 40 is connected to the gate lines 10 and data lines 20 respectively, and is used to generate a driving current according to the data signal under the control of the gate signal; the first anode 60 and the second anode 70 are connected to the driving transistor 40 respectively, and are used to emit light under the drive of the driving current output by the driving transistor 40. The perpendicular intersection of the gate line and the data line mentioned in this embodiment refers to the perpendicular intersection of the projections of the gate line and the data line on the substrate, while the gate line and the data line do not directly contact each other due to the presence of a gate insulation layer.
[0063] In an exemplary embodiment, both the first anode 60 and the second anode 70 are anodes of the OLED display substrate.
[0064] In an exemplary embodiment, each pixel unit is provided with a single driving transistor 40, which can provide driving current to all sub-units within the pixel unit. For example... Figure 3 As shown, the first end of the driving transistor 40 can be connected to the gate line 10, the second end can be connected to the data line 20, and the third end can be connected to the first anode 60 and the second anode 70 respectively. Under the control of the gate scan signal provided by the gate line 10, the driving transistor 40 generates a driving current according to the data signal provided by the data line 20, and outputs it to the first anode 60 through the first signal line 41 and to the second anode 70 through the second signal line 42. The sub-units corresponding to the first anode 60 and the second anode 70 emit light under the drive of the driving current output by the driving transistor 40.
[0065] In an exemplary embodiment, a connection portion 43 is further provided between the driving transistor 40 and the first anode 60. The connection portion 43 has a first end and a second end. The first end is electrically connected to the first anode 60 or is configured to be soldered to the first anode 60. The second end is electrically connected to the driving transistor 40 or is configured to be soldered to the driving transistor 40. The connection portion 43 does not electrically connect the first anode 60 and the driving transistor 40 before soldering.
[0066] By providing the connection part 43, when a foreign object exists in the pixel unit, but it cannot be determined whether the foreign object is in the sub-unit where the first anode 60 is located or the sub-unit where the second anode 70 is located, the first signal line 41 can be disconnected using a laser. If the foreign object is in the sub-unit where the first anode 60 is located, the sub-unit where the first anode 60 is located is isolated after disconnecting the first signal line 41, and the sub-unit where the second anode 70 is located can emit light normally. However, if the foreign object is in the sub-unit where the second anode 70 is located, neither the sub-unit where the first anode 60 is located nor the sub-unit where the second anode 70 is located can emit light normally after disconnecting the first signal line 41. In this case, the connection part 43 can be welded to the driving transistor 40 or the first anode 60 using a laser, so that the driving transistor 40 and the first anode 60 are reconnected through the connection part 43, and the sub-unit where the first anode 60 is located can emit light normally again. By pre-setting the connection part 43, the sub-unit containing foreign objects can be accurately isolated, making the repair of the sub-unit no longer blind, improving the accuracy of the sub-unit repair, reducing the scrap rate of the display substrate, and saving production costs.
[0067] Figure 3 In the illustrated embodiment, the first and second anodes are two rectangles arranged vertically. In other embodiments, the two rectangular first and second anodes can be arranged horizontally, such as... Figure 4 As shown. In actual implementation, the shape and arrangement of the first and second anodes can be comprehensively considered based on the structural design of the pixel unit. For example, the first and second anodes can be designed as two triangular shapes, such as... Figure 5 As shown. For example, the first and second anodes can be designed as two trapezoidal shapes, such as... Figure 6 As shown. For example, the first and second anodes can be designed as two U-shapes, arranged in an interlocking manner, such as... Figure 7 As shown. In other embodiments, the shape and arrangement of the first and second anodes can be configured in any other suitable manner, and the embodiments disclosed herein are not particularly limited thereto.
[0068] Figure 3 The illustrated embodiment uses a pixel unit with two sub-units as an example. However, in actual implementation, a pixel unit can have multiple sub-units, such as three, four, or more, with one anode in each sub-unit. For example, a pixel unit can have n sub-units, which can be connected to the same driving transistor. n-1 connection parts can be provided, each corresponding to one sub-unit; one sub-unit may not have a connection part. Alternatively, n connection parts can be provided, each corresponding to one sub-unit. The number of connection parts and their correspondence with the sub-units can be set as needed, and this disclosure does not impose any limitations on this.
[0069] Figure 8 In an exemplary embodiment, the display substrate is along... Figure 3 A cross-sectional view of the extension direction of the first signal line. (See diagram below.) Figure 8 As shown, in an exemplary embodiment, the display substrate may include: a substrate 100 and a driving circuit layer, a planarization layer 104, and an anode layer sequentially disposed on the substrate 100. The driving circuit layer may include a plurality of transistors and storage capacitors (not shown) constituting a pixel driving circuit. Figure 8 As shown, the driving circuit layer may include multiple stacked insulating layers and driving transistors 40 disposed between the multiple insulating layers. The multiple insulating layers may include: a first insulating layer 101, a second insulating layer 102, and a third insulating layer 103. The driving transistor 40 may include: an active layer 401, a gate electrode 402, a first electrode 403, and a second electrode 404. The anode layer may include a first anode 60 and a second anode 70 (not shown). The second electrode 404 of the driving transistor 40 may be connected to the first anode 60. The contact point between the second electrode 404 and the first anode 60 is the first signal line 41. A planarization layer 104 is disposed between the second electrode 404 and the first anode 60. A first through-hole is disposed on the planarization layer 104, which can expose the surface of the second electrode 404. The first anode 60 can be connected to the second electrode 404 through the first through-hole. When it is necessary to isolate the sub-unit where the first anode 60 is located, a laser can be used to disconnect the connection between the second electrode 404 and the first anode 60. The display substrate along the... Figure 3 Cross-sectional structure of the extension direction of the second signal line 42 and Figure 8 Similarly, I will not go into details here.
[0070] Figure 9 In an exemplary embodiment, in the disconnected state, the display substrate moves along... Figure 3 Cross-sectional view of the extension direction of the connecting part. Figure 9 and Figure 8 The structures shown are similar, except that... Figure 9The first anode 60 is not connected to the second electrode 404. A connecting portion 43 is provided between the first anode 60 and the second electrode 404. The connecting portion 43 has a first end near the first anode 60 and a second end near the second electrode 404. The first end of the connecting portion 43 is electrically connected to the first anode 60, and the second end of the connecting portion 43 is separated from the second electrode 404 by a partial planarization layer 104. The orthographic projection of the connecting portion 43 on the substrate 100 and the orthographic projection of the first anode 60 on the substrate 100 may have a first overlapping region, and the orthographic projection of the connecting portion 43 on the substrate 100 and the orthographic projection of the second electrode 404 of the driving transistor on the substrate 100 may have a second overlapping region. The orthographic projection of the first overlapping region on the substrate 100 may overlap with the orthographic projection of the second overlapping region on the substrate 100. In an exemplary embodiment, the orthographic projection of the first overlapping region on the substrate 100 may include the orthographic projection of the second overlapping region on the substrate 100; or, the orthographic projection of the second overlapping region on the substrate 100 may include the orthographic projection of the first overlapping region on the substrate 100. Figure 9 Zhongyu Figure 8 The same structure can be seen in the reference to Figure 8 The description of [the subject] will not be repeated here. For example... Figure 9 As shown, in an exemplary embodiment, the first end of the connection portion 43 and the first anode 60 can be welded together, or the connection portion 43 and the first anode 60 can be configured as an integral structure; this disclosure does not limit this. When it is necessary to restore the connection between the driving transistor 40 and the first anode 60, a through hole can be formed between the second end of the connection portion 43 and the second electrode 404 using a laser, and the connection portion 43 can be melted and connected to the second electrode 404. The location where the through hole is formed between the second end of the connection portion 43 and the second electrode 404 can be located in the second overlapping region. After the connection between the driving transistor 40 and the first anode 60 is restored, the display substrate moves along... Figure 3 The sectional view of the extension direction of the middle connecting part can be referred to Figure 8 As shown, it will not be elaborated further here.
[0071] In other embodiments, the second end of the connecting portion 43 can be electrically connected to the second electrode 404, and a partial planarization layer 104 can be separated between the first end of the connecting portion 43 and the first anode 60. The second end of the connecting portion 43 can be welded to the second electrode 404, or the connecting portion 43 and the second electrode 404 can be configured as an integral structure. When it is necessary to restore the connection between the driving transistor 40 and the first anode 60, a through hole can be formed between the first end of the connecting portion 43 and the first anode 60 using a laser, and the connecting portion 43 can be melted and connected to the first anode 60. The through hole formed between the first end of the connecting portion 43 and the first anode 60 can be located in the first overlapping region.
[0072] In other embodiments, a partial planarization layer 104 may be separated between the first end of the connecting portion 43 and the first anode 60, and a partial planarization layer 104 may be separated between the second end of the connecting portion 43 and the second electrode 404. When it is necessary to restore the connection between the driving transistor 40 and the first anode 60, a through hole can be formed between the first end of the connecting portion 43 and the first anode 60, and between the second end of the connecting portion 43 and the second electrode 404, using a laser, and the connecting portion 43 can be melted and connected to the first anode 60. The position of the through hole formed between the first end of the connecting portion 43 and the first anode 60 can be located in the first overlapping region, and the position of the through hole formed between the second end of the connecting portion 43 and the second electrode 404 can be located in the second overlapping region. The connection relationship between the connecting portion 43 and the first anode 60 and the second electrode 404 can be set as needed, and this disclosure does not limit this.
[0073] Figure 10 This is a schematic diagram of the equivalent circuit of the pixel driving circuit in an exemplary embodiment. In an exemplary embodiment, the pixel driving circuit can be a 3T1C, 4T1C, 5T1C, 5T2C, 6T1C, or 7T1C structure. Figure 10 As shown, the pixel driving circuit may include 7 transistors (first transistor T1 to seventh transistor T7) and 1 storage capacitor C. The pixel driving circuit includes a data signal terminal D, a first scan signal terminal S1, a second scan signal terminal S2, a light emission signal terminal E, an initial signal terminal INIT, a first power supply terminal VDD, and a second power supply terminal VSS. Each terminal is connected to the corresponding signal line or power supply line.
[0074] In an exemplary embodiment, the pixel driving circuit may include a first node N1, a second node N2, and a third node N3. The first node N1 is connected to the first terminal of the third transistor T3, the second terminal of the fourth transistor T4, and the second terminal of the fifth transistor T5, respectively. The second node N2 is connected to the second terminal of the first transistor, the first terminal of the second transistor T2, the control terminal of the third transistor T3, and the second terminal of the storage capacitor C, respectively. The third node N3 is connected to the second terminal of the second transistor T2, the second terminal of the third transistor T3, and the first terminal of the sixth transistor T6, respectively.
[0075] In an exemplary embodiment, the first end of the storage capacitor C is connected to the first power supply terminal VDD, and the second end of the storage capacitor C is connected to the second node N2, that is, the second end of the storage capacitor C is connected to the control electrode of the third transistor T3.
[0076] The control electrode of the first transistor T1 is connected to the second scan signal terminal S2, the first electrode of the first transistor T1 is connected to the initial signal terminal INIT, and the second electrode of the first transistor is connected to the second node N2. When the on-level scan signal is applied to the second scan signal terminal S2, the first transistor T1 transmits the initialization voltage to the control electrode of the third transistor T3 to initialize the charge of the control electrode of the third transistor T3.
[0077] The control electrode of the second transistor T2 is connected to the first scan signal terminal S1, the first electrode of the second transistor T2 is connected to the second node N2, and the second electrode of the second transistor T2 is connected to the third node N3. When a conduction-level scan signal is applied to the first scan signal terminal S1, the second transistor T2 connects the control electrode of the third transistor T3 to its second electrode.
[0078] The control electrode of the third transistor T3 is connected to the second node N2, meaning the control electrode of the third transistor T3 is connected to the second terminal of the storage capacitor C. The first electrode of the third transistor T3 is connected to the first node N1, and the second electrode of the third transistor T3 is connected to the third node N3. The third transistor T3 can be called the driving transistor. The third transistor T3 determines the driving current flowing between the first power line and the second power line based on the potential difference between its control electrode and its first electrode.
[0079] The control electrode of the fourth transistor T4 is connected to the first scan signal terminal S1, the first electrode of the fourth transistor T4 is connected to the data signal terminal D, and the second electrode of the fourth transistor T4 is connected to the first node N1. When a conduction-level scan signal is applied to the first scan signal terminal S1, the fourth transistor T4 causes the data voltage at the data signal terminal D to be input to the pixel driving circuit.
[0080] The control electrode of the fifth transistor T5 is connected to the light-emitting signal terminal E, the first electrode of the fifth transistor T5 is connected to the first power supply terminal VDD, and the second electrode of the fifth transistor T5 is connected to the first node N1. The control electrode of the sixth transistor T6 is connected to the light-emitting signal terminal E, the first electrode of the sixth transistor T6 is connected to the third node N3, and the second electrode of the sixth transistor T6 is connected to the first electrode of the light-emitting device. When a conduction-level light-emitting signal is applied to the light-emitting signal terminal E, the fifth transistor T5 and the sixth transistor T6 form a driving current path between the first power supply terminal VDD and the second power supply terminal VSS, causing the light-emitting device to emit light.
[0081] The control terminal of the seventh transistor T7 is connected to the second scan signal terminal S2, the first terminal of the seventh transistor T7 is connected to the initial signal terminal INIT, and the second terminal of the seventh transistor T7 is connected to the first terminal of the light-emitting device. When the on-level scan signal is applied to the second scan signal terminal S2, the seventh transistor T7 transmits the initialization voltage to the first terminal of the light-emitting device to initialize or release the accumulated charge in the first terminal of the light-emitting device.
[0082] In an exemplary embodiment, the light-emitting device may be an OLED, including a stacked first electrode (anode), an organic light-emitting layer and a second electrode (cathode), or it may be a QLED, including a stacked first electrode (anode), a quantum dot light-emitting layer and a second electrode (cathode), or it may be an LED.
[0083] In an exemplary embodiment, the second electrode of the light-emitting device is connected to the second power line, the signal of the second power line is a low-level signal, and the signal of the first power line is a continuously high-level signal. The first scan signal terminal S1 is the scan signal line in the pixel driving circuit of this display row, and the second scan signal terminal S2 is the scan signal line in the pixel driving circuit of the previous display row. That is, for the nth display row, the first scan signal terminal S1 is S(n), and the second scan signal terminal S2 is S(n-1). The second scan signal terminal S2 of this display row and the first scan signal terminal S1 in the pixel driving circuit of the previous display row are the same signal line, which can reduce the signal lines of the display substrate and realize the narrow bezel of the display substrate.
[0084] In an exemplary embodiment, the first transistor T1 to the seventh transistor T7 can be either P-type transistors or N-type transistors. Using the same type of transistor in the pixel driving circuit can simplify the process flow, reduce the processing difficulty of the display substrate, and improve the product yield. In some possible implementations, the first transistor T1 to the seventh transistor T7 may include both P-type and N-type transistors.
[0085] In an exemplary embodiment, the first transistor T1 to the seventh transistor T7 can be a low-temperature polycrystalline silicon (LTPS) thin-film transistor, or an oxide thin-film transistor, or a combination of both. The active layer of the LTPS is made of low-temperature polycrystalline silicon, while the active layer of the oxide thin-film transistor is made of oxide. LTPS transistors have advantages such as high mobility and fast charging, while oxide thin-film transistors have advantages such as low leakage current. Integrating LTPS and oxide thin-film transistors onto a single display substrate to form a low-temperature polycrystalline oxide (LTPO) display substrate leverages the advantages of both, enabling low-frequency driving, reducing power consumption, and improving display quality.
[0086] Figure 11 This is a timing diagram of the pixel driving circuit in an exemplary embodiment. The following uses... Figure 10 Taking the example that all seven transistors in the pixel driving circuit shown are P-type transistors, the operation of the pixel driving circuit in an exemplary embodiment may include:
[0087] In the first stage, A1, also known as the reset stage, the signal at the second scan signal terminal S2 is low, while the signals at the first scan signal terminal S1 and the light-emitting signal terminal E are high. The low signal at the second scan signal terminal S2 turns on the first transistor T1, and the initial signal at the INIT terminal is provided to the second node N2 to initialize the storage capacitor C, clearing the original data voltage within it. The high signals at the first scan signal terminal S1 and the light-emitting signal terminal E turn off the second transistor T2, the fourth transistor T4, the fifth transistor T5, the sixth transistor T6, and the seventh transistor T7; during this stage, the OLED does not emit light.
[0088] The second stage, A2, is called the data writing stage or threshold compensation stage. During this stage, the signal at the first scan signal terminal S1 is low, while the signals at the second scan signal terminal S2 and the light emission signal terminal E are high. The data signal terminal D outputs a data voltage. Because the second terminal of the storage capacitor C is low, the third transistor T3 is turned on. The low signal at the first scan signal terminal S1 turns on the second transistor T2, the fourth transistor T4, and the seventh transistor T7. The turn-on of the second transistor T2 and the fourth transistor T4 allows the data voltage output from the data signal terminal D to be supplied to the second node N2 via the first node N1, the turned-on third transistor T3, the third node N3, and the turned-on second transistor T2. The difference between the data voltage output from the data signal terminal D and the threshold voltage of the third transistor T3 is charged into the storage capacitor C. The voltage at the second terminal of the storage capacitor C (second node N2) is Vd - |Vth|, where Vd is the data voltage output from the data signal terminal D, and Vth is the threshold voltage of the third transistor T3. The seventh transistor T7 is turned on, providing the initial voltage of the initial signal terminal INIT to the first electrode of the OLED, initializing (resetting) the first electrode of the OLED, clearing its internal pre-stored voltage, completing the initialization, and ensuring that the OLED does not emit light. The signal at the second scan signal terminal S2 is a high-level signal, causing the first transistor T1 to turn off. The signal at the light emission signal terminal E is a high-level signal, causing the fifth transistor T5 and the sixth transistor T6 to turn off.
[0089] The third stage, A3, is called the light-emitting stage. During this stage, the light-emitting signal E is at a low level, while the first scan signal S1 and the second scan signal S2 are at high levels. The low level of the light-emitting signal E turns on the fifth transistor T5 and the sixth transistor T6. The power supply voltage output from the first power supply terminal VDD then provides a driving voltage to the first electrode of the OLED through the turned-on fifth transistor T5, third transistor T3, and sixth transistor T6, driving the OLED to emit light.
[0090] During the pixel driving circuit operation, the driving current flowing through the third transistor T3 (driving transistor) is determined by the voltage difference between its gate anode and first electrode. Since the voltage at the second node N2 is Vd - |Vth|, the driving current of the third transistor T3 is:
[0091] I = K * (Vgs - Vth) 2 =K*[(Vdd-Vd+|Vth|)-Vth] 2 =K*(Vdd-Vd) 2
[0092] Where I is the driving current flowing through the third transistor T3, which is the driving current driving the OLED, K is a constant, Vgs is the voltage difference between the gate anode and the first electrode of the third transistor T3, Vth is the threshold voltage of the third transistor T3, Vd is the data voltage output by the data signal terminal D, and Vdd is the power supply voltage received by the first power supply terminal VDD from the first power supply line 81.
[0093] The following description uses the fabrication process of a display substrate as an example. The "patterning process" described in this disclosure includes, for metallic, inorganic, or transparent conductive materials, processes such as photoresist coating, mask exposure, development, etching, and photoresist stripping; for organic materials, it includes processes such as organic material coating, mask exposure, and development. Deposition can be performed using any one or more of sputtering, evaporation, and chemical vapor deposition; coating can be performed using any one or more of spraying, spin coating, and inkjet printing; etching can be performed using any one or more of dry etching and wet etching. This disclosure does not limit the methods used. A "thin film" refers to a thin film made of a certain material on a substrate using deposition, coating, or other processes. If the "thin film" does not require a patterning process during the entire fabrication process, it can also be called a "layer." If the "thin film" requires a patterning process during the entire fabrication process, it is called a "thin film" before the patterning process and a "layer" after the patterning process. The "layer" after the patterning process contains at least one "pattern." The phrase "A and B are arranged in the same layer" in this disclosure means that A and B are formed simultaneously through the same patterning process, and the "thickness" of the film layer is the dimension of the film layer in the direction perpendicular to the display substrate. In the exemplary embodiments of this disclosure, "the orthographic projection of B is within the range of the orthographic projection of A" or "the orthographic projection of A includes the orthographic projection of B" means that the boundary of the orthographic projection of B falls within the boundary range of the orthographic projection of A, or the boundary of the orthographic projection of A overlaps with the boundary of the orthographic projection of B.
[0094] In an exemplary embodiment, Figure 8 and Figure 9 The fabrication process of the display substrate shown may include the following steps.
[0095] (1) Forming a driving circuit layer pattern. In an exemplary embodiment, forming a driving circuit layer pattern may include:
[0096] A first insulating film and a semiconductor film are sequentially deposited on a substrate 100. The semiconductor film is patterned by a patterning process to form a first insulating layer 101 covering the substrate 100 and a semiconductor layer pattern disposed on the first insulating layer 101. The semiconductor layer pattern of each sub-unit may include at least an active layer 401.
[0097] Subsequently, a second insulating film and a first conductive film are deposited sequentially. The first conductive film is patterned by a patterning process to form a second insulating layer 102 covering the semiconductor layer pattern, and a first conductive layer pattern disposed on the second insulating layer 102. The first conductive layer pattern of each sub-unit may include at least a gate electrode 402.
[0098] Subsequently, a third insulating film is deposited, and the third insulating film is patterned by a patterning process to form a third insulating layer pattern covering the pattern of the first conductive layer. The third insulating layer pattern of each sub-unit may include a third insulating layer 103. Two active vias are formed on the third insulating layer 103, and the two active vias expose the two ends of the active layer 401 respectively.
[0099] Subsequently, a second conductive film is deposited and patterned using a patterning process to form a second conductive layer pattern on the third insulating layer 103. The second conductive layer pattern includes at least a first electrode 403 and a second electrode 404 located in each sub-unit. The first electrode 403 and the second electrode 404 are respectively connected to the active layer 401 through active vias.
[0100] At this point, the driving circuit layer pattern is complete. In an exemplary embodiment, the driving circuit layer of each sub-pixel may include multiple transistors and storage capacitors constituting the pixel driving circuit. Figure 8 and Figure 9 The example only uses a pixel driving circuit including a driving transistor.
[0101] In an exemplary embodiment, the substrate may be a rigid substrate or a flexible substrate. The rigid substrate may be made of materials such as glass or quartz, while the flexible substrate may be made of materials such as polyimide (PI). The flexible substrate may be a single-layer structure or a laminated structure composed of inorganic material layers and flexible material layers, which is not limited herein.
[0102] In exemplary embodiments, the first, second, and third insulating layers can be any one or more of silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiON), and can be single-layer, multi-layer, or composite layers. The first and second conductive layers can be made of metallic materials, such as any one or more of silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo), or alloys of the above metals, such as aluminum-neodymium alloy (AlNd) or molybdenum-niobium alloy (MoNb), and can be single-layer structures or multi-layer composite structures, such as Ti / Al / Ti. The semiconductor layer can be made of amorphous indium gallium zinc oxide (a-IGZO), zinc oxynitride (ZnON), or indium zinc tin oxide (IZTO), and this disclosure does not limit the specific materials used.
[0103] (2) Forming a planarization layer pattern. In an exemplary embodiment, forming a planarization layer pattern may include:
[0104] A planar thin film is coated on the substrate on which the aforementioned pattern is formed. The planar thin film is patterned by a patterning process to form a planar layer pattern covering the second conductive layer pattern. At least one first through hole, a second through hole, and a first blind hole are formed on the planar layer of each sub-unit. The first through hole and the second through hole expose the surface of the second electrode 404. The first blind hole exposes the planar layer. The orthographic projection of the first blind hole on the substrate 100 and the orthographic projection of the second electrode 404 on the substrate 100 have a second overlapping area.
[0105] (3) Forming the connection portion and the anode layer pattern. In an exemplary embodiment, forming the connection portion and the anode layer pattern may include:
[0106] A third conductive film is deposited on the substrate forming the aforementioned pattern, and the third conductive film is patterned using a patterning process to form an anode layer pattern. The anode layer pattern of each sub-unit includes at least a first anode 60 and a second anode 70. The first anode 60 can be connected through a first through-hole and a second electrode 404, and the second anode 70 can be connected through a second through-hole and a second electrode 404. The connecting part 43 and the first anode 60 can be an integral structure, and the connecting part 43 is located in a first blind hole.
[0107] In other embodiments, the first blind hole may not be formed. By controlling the thickness of the planarization layer, the connecting portion and the anode layer, the connection of the first anode 60 and the second electrode 404 under laser irradiation can also be achieved. This disclosure does not limit this.
[0108] In an exemplary embodiment, the third conductive film may be made of any one or more of the following metallic materials: silver (Ag), copper (Cu), aluminum (Al), titanium (Ti) and molybdenum (Mo), or alloys of the above metals, such as aluminum-neodymium alloy (AlNd) or molybdenum-niobium alloy (MoNb). It may be a single-layer structure or a multi-layer composite structure, such as Ti / Al / Ti.
[0109] The display substrate fabrication is now complete. The resulting structure can be as follows: Figure 8 or Figure 9 As shown. Subsequently, a light-emitting layer, a cathode, and an encapsulation layer can be formed sequentially. The structure and fabrication process are the same as existing processes, and will not be described in detail here.
[0110] In an exemplary embodiment, the display substrate may also include other film layer structures, such as protective layers, which can be prepared according to actual needs and will not be described in detail here.
[0111] The structures and fabrication processes shown in the exemplary embodiments of this disclosure are merely illustrative. In actual implementation, the corresponding structures and patterning processes can be modified and added or reduced as needed, and this disclosure does not impose any limitations.
[0112] This disclosure also provides a display device, including the display substrate described in any of the above embodiments. The display device can be any product or component with display function, such as an LED display, mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, or navigator, and this disclosure is not limited thereto.
[0113] This disclosure also provides a method for fabricating a display substrate, the method comprising: forming a driving circuit layer on a substrate, the driving structure layer including a driving transistor; forming n-1 connection portions on the driving circuit layer; forming an anode layer on the connection portions, the anode layer including n anodes, the n anodes being respectively connected to the second electrode of the driving transistor; wherein, the connection portions are disposed between the anodes and the driving transistor, for establishing a connection between the anodes and the second electrode of the driving transistor when repairing dark spot defects; and n is an integer greater than or equal to 2.
[0114] This disclosure also provides a method for repairing a display substrate. The display substrate includes a driving circuit layer and an anode layer stacked on a substrate. The driving circuit layer includes a driving transistor, and the anode layer includes n anodes, each of which is connected to a second electrode of the driving transistor. The display substrate also includes n-1 connection portions disposed between the anodes and the driving transistors, where n is an integer greater than or equal to 2. When repairing dark spot defects, the repair method includes: disconnecting the connection between the anodes and the second electrodes of the driving transistors; and, if the dark spot defects are not successfully repaired, establishing a connection between the anodes and the driving transistors using the connection portions.
[0115] In an exemplary embodiment, on a plane parallel to the display substrate, the display substrate includes a plurality of pixel units, each pixel unit including n sub-units, each sub-unit including an anode, and the pixel unit including a driving transistor; the n-1 connecting portions are configured one-to-one with the n-1 anodes among the n anodes; the step of establishing a connection between the anode and the second electrode of the driving transistor using the connecting portions when the dark spot defect is not successfully repaired includes: after disconnecting the connection between the anode and the second electrode of the driving transistor, determining whether the remaining sub-units in the pixel unit emit light normally; if the remaining sub-units in the pixel unit cannot emit light normally, determining that the dark spot defect has not been successfully repaired; and establishing a connection between the anode and the second electrode of the driving transistor using the connecting portions.
[0116] In an exemplary embodiment, the connection portion has a first end and a second end; the orthographic projection of the connection portion on the substrate and the orthographic projection of the anode on the substrate have a first overlapping region; the orthographic projection of the connection portion on the substrate and the orthographic projection of the second electrode of the driving transistor on the substrate have a second overlapping region; the connection of the anode and the second electrode of the driving transistor using the connection portion includes: irradiating the first overlapping region and the second overlapping region with a laser from the side of the substrate away from the driving circuit layer, welding the first end to the anode, and welding the second end to the second electrode of the driving transistor.
[0117] In an exemplary embodiment, the connecting portion and the anode are integrally formed. The step of establishing a connection between the anode and the second electrode of the driving transistor using the connecting portion includes: irradiating the second overlapping region with a laser from the side of the substrate away from the driving circuit layer, and welding the second end to the second electrode of the driving transistor.
[0118] In an exemplary embodiment, the connecting portion is integrally structured with the second electrode of the driving transistor. The step of establishing a connection between the anode and the second electrode of the driving transistor using the connecting portion includes: irradiating the first overlapping region with a laser from the side of the substrate away from the driving circuit layer, and welding the first end and the anode.
[0119] Figure 12 This is a schematic diagram of a method for repairing a display substrate provided in an exemplary embodiment. Figure 12 As shown, assuming a pixel unit comprises n sub-units, where n is an integer greater than or equal to 2, each sub-unit has an anode, and these n anodes are connected to the second electrode of a driving transistor. There are n-1 connection points between the anodes and the driving transistor, each connection point corresponding to one anode, enabling connection between the anode and the second electrode of the driving transistor. One of the n anodes has no connection point. When a pixel unit experiences a dark spot defect, and it is impossible to determine which sub-unit the foreign object is located in, the following repair method can be used:
[0120] S1. Disconnect the connection between the single anode and the second electrode of the driving transistor;
[0121] In this step, one anode can be selected from those anodes with corresponding connection portions, and the connection between that anode and the second electrode of the driving transistor can be disconnected. In an exemplary embodiment, a laser can be used to irradiate the substrate from the side away from the driving circuit layer to disconnect the connection between the anode and the second electrode of the driving transistor.
[0122] P1. Determine whether the remaining sub-units within the pixel unit can emit light normally;
[0123] If the foreign object is present in the sub-unit where the selected anode is located in step S1, the sub-unit where the anode is located is isolated after the connection between the anode and the second electrode of the driving transistor is disconnected. The remaining sub-units in the pixel unit can emit light normally, the dark spot defect is successfully repaired, and the repair step can be ended.
[0124] If the foreign object is not present in the sub-unit where the selected anode is located in step S1, the sub-unit where the anode is located is isolated after the connection between the anode and the second electrode of the driving transistor is disconnected. However, the other sub-units in the pixel unit still cannot emit light normally. It is determined that the dark spot defect has not been successfully repaired, and step S2 is continued.
[0125] S2. Reconnect the anode and the second electrode of the driving transistor using the connecting part;
[0126] A laser is used to irradiate the substrate from the side away from the driving circuit layer, causing the anode selected in step S1 to re-establish a connection with the second electrode of the driving transistor through the corresponding connection part. After executing step S2, the sub-unit containing the anode can resume normal light emission, and the possibility of foreign objects being located in the sub-unit containing the anode has been ruled out, so step S3 can continue to be executed.
[0127] S3. Disconnect the connection between the next anode and the second electrode of the driving transistor within the pixel unit;
[0128] In this step, another anode can be selected from those anodes with corresponding connection portions, and the connection between this anode and the second electrode of the driving transistor can be disconnected. Then, step P1 is performed for judgment. In an exemplary embodiment, a laser can be used to irradiate the substrate from the side away from the driving circuit layer to disconnect the connection between the anode and the second electrode of the driving transistor.
[0129] If the foreign object is present in the sub-unit where the selected anode is located in step S3, the sub-unit where the anode is located is isolated after the connection between the anode and the second electrode of the driving transistor is disconnected. The remaining sub-units in the pixel unit can emit light normally, the dark spot defect is successfully repaired, and the repair step can be ended.
[0130] If the foreign object is not present in the sub-unit containing the anode selected in step S3, the sub-unit containing the anode is isolated after disconnecting the connection between the anode and the second electrode of the driving transistor. However, the remaining sub-units within the pixel unit still cannot emit light normally, indicating that the dark spot defect has not been successfully repaired, and the possibility that the foreign object is located in the sub-unit containing the anode selected in steps S1 and S3 has been ruled out. Subsequently, step S2 can be repeated to re-establish the connection between the anode selected in step S3 and the second electrode of the driving transistor.
[0131] By repeating steps S2 and S3, the presence of foreign objects in each sub-unit can be determined one by one. This continues until the connection between a certain anode and the second electrode of the driving transistor is disconnected. If the remaining sub-units within the pixel unit can then emit light normally, it indicates that the foreign object is present in the disconnected sub-unit, successfully repairing the dark spot defect. Alternatively, the sub-unit without a corresponding connection can be checked last. If it is determined that no foreign objects are present in the first n-1 sub-units, it can be determined that the foreign object is present in the sub-unit without a corresponding connection. The connection between the anode and the second electrode of the driving transistor in that sub-unit can then be directly disconnected to isolate the sub-unit, completing the dark spot repair.
[0132] In exemplary embodiments, the execution order between steps S2 and S3 is not limited. For example, if the judgment result in step P1 is "not possible," step S3 can be executed first, followed by step S2, without affecting the repair result. Alternatively, if the judgment result in step P1 is "not possible," step S2 can be skipped, and step S3 can be executed directly. In the next judgment in step P1, only the luminescence status of the currently connected sub-unit is judged. After finding the sub-unit where the foreign object is located, the previously disconnected anode can be reconnected. A suitable execution order can be selected as needed, and this disclosure does not impose any restrictions on it.
[0133] While the embodiments disclosed in this invention are as described above, the content is merely for the purpose of facilitating understanding of the invention and is not intended to limit the invention. Any person skilled in the art to which this invention pertains may make any modifications and changes to the form and details of the implementation without departing from the spirit and scope disclosed herein; however, the scope of patent protection of this invention shall still be determined by the scope defined in the appended claims.
Claims
1. A display substrate, characterized in that, The display substrate includes a driving circuit layer and an anode layer stacked on a substrate. The driving circuit layer includes a driving transistor, and the anode layer includes n anodes, each of which is connected to the second electrode of the driving transistor. The display substrate also includes n-1 connection portions disposed between the anodes and the driving transistors. These connection portions are used to re-establish the connection between the anodes and the second electrode of the driving transistors after the connection between the anodes and the second electrode of the driving transistors is broken during the repair of dark spot defects. The n is an integer greater than or equal to 2.
2. The display substrate according to claim 1, characterized in that, On a plane parallel to the display substrate, the display substrate includes a plurality of pixel units, each pixel unit includes n sub-units, each sub-unit includes an anode, and the pixel unit includes the driving transistor; the n-1 connecting portions are arranged in a one-to-one correspondence with the n-1 anodes among the n anodes; The connecting portion has a first end and a second end. The first end is electrically connected to the anode or is configured to be welded to the anode. The second end is electrically connected to the second electrode of the driving transistor or is configured to be welded to the second electrode of the driving transistor. The connecting portion does not electrically connect the anode and the second electrode of the driving transistor before welding.
3. The display substrate according to claim 1 or 2, characterized in that, The orthographic projection of the connecting portion on the substrate and the orthographic projection of the anode on the substrate have a first overlapping region; the orthographic projection of the connecting portion on the substrate and the orthographic projection of the second electrode of the driving transistor on the substrate have a second overlapping region.
4. The display substrate according to claim 3, characterized in that, The orthographic projection of the first overlapping region onto the substrate includes the orthographic projection of the second overlapping region onto the substrate; or, the orthographic projection of the second overlapping region onto the substrate includes the orthographic projection of the first overlapping region onto the substrate.
5. The display substrate according to claim 2, characterized in that, The connecting part and the anode are integral structures, and the second end is configured to be welded to the second electrode of the driving transistor.
6. The display substrate according to claim 2, characterized in that, The connecting portion is integrally formed with the second electrode of the driving transistor, and the first end is configured to be solderable to the anode.
7. A display device, characterized in that, Includes the display substrate as described in any one of claims 1 to 6.
8. A method for preparing a display substrate, characterized in that, The method includes: A driving circuit layer is formed on a substrate, the driving circuit layer including driving transistors; n-1 connection portions are formed on the driving circuit layer; An anode layer is formed on the connection portion, the anode layer comprising n anodes, all of which are connected to the second electrode of the driving transistor; The connection portion is disposed between the anode and the driving transistor, and is used to reconnect the anode and the second electrode of the driving transistor after the connection between the anode and the second electrode of the driving transistor is broken when repairing a dark spot defect; n is an integer greater than or equal to 2.
9. A method for repairing a display substrate, characterized in that, The display substrate includes a driving circuit layer and an anode layer stacked on a substrate. The driving circuit layer includes a driving transistor, and the anode layer includes n anodes, each of which is connected to the second electrode of the driving transistor. The display substrate also includes n-1 connection portions disposed between the anodes and the driving transistors, where n is an integer greater than or equal to 2. When repairing dark spot defects, the repair method includes: Disconnect the connection between the anode and the second electrode of the driving transistor; If the dark spot defect cannot be repaired, the connection is used to establish a connection between the anode and the driving transistor.
10. The repair method according to claim 9, characterized in that, On a plane parallel to the display substrate, the display substrate includes a plurality of pixel units, each pixel unit includes n sub-units, each sub-unit includes an anode, and the pixel unit includes the driving transistor; the n-1 connecting portions are arranged in a one-to-one correspondence with the n-1 anodes among the n anodes; In the event that the dark spot defect cannot be successfully repaired, the method of establishing a connection between the anode and the second electrode of the driving transistor using the connection portion includes: After disconnecting the connection between the anode and the second electrode of the driving transistor, it is determined whether the remaining sub-units in the pixel unit emit light normally. If the remaining sub-units in the pixel unit cannot emit light normally, it is determined that the dark spot defect has not been successfully repaired. The connection is used to establish a connection between the anode and the second electrode of the driving transistor.
11. The repair method according to claim 10, characterized in that, The connecting portion has a first end and a second end; the orthographic projection of the connecting portion on the substrate and the orthographic projection of the anode on the substrate have a first overlapping region; the orthographic projection of the connecting portion on the substrate and the orthographic projection of the second electrode of the driving transistor on the substrate have a second overlapping region; establishing a connection between the anode and the second electrode of the driving transistor using the connecting portion includes: Laser irradiation is performed on the first overlapping region and the second overlapping region from the side of the substrate away from the driving circuit layer, so that the first end and the anode are welded together, and the second end is welded together with the second electrode of the driving transistor.
12. The repair method according to claim 11, characterized in that, The connecting portion and the anode are integrally formed. The method of establishing a connection between the anode and the second electrode of the driving transistor using the connecting portion includes: Laser irradiation is performed on the second overlapping region from the side of the substrate away from the driving circuit layer, and the second end is welded to the second electrode of the driving transistor.
13. The repair method according to claim 11, characterized in that, The connecting portion is integrally formed with the second electrode of the driving transistor. The method of establishing a connection between the anode and the second electrode of the driving transistor using the connecting portion includes: Laser irradiation is performed on the first overlapping region from the side of the substrate away from the driving circuit layer to weld the first end and the anode.