Tray and epitaxial growth reaction chamber for epitaxial growth

Abstract

The application provides a tray for epitaxial growth and an epitaxial growth reaction chamber. The tray comprises a first component and a second component; a recess is arranged in the center area of the first component; one or more grooves are arranged on the first component and / or the second component, and the grooves are communicated with the space outside the lateral surface of the tray and the recess; and the first component and the second component are stacked and combined to form a gas guiding channel in the tray. During the epitaxial growth reaction, the tray can utilize the pressure difference between the upper side of the center area of the tray and the outside of the tray, and utilize the Venturi principle to make a part of the gas on the upper side of the tray flow to the outside of the tray through the gas guiding channel, so as to increase the gas flow speed of the center area above the tray, reduce the residence of the gas flow of the center area above the tray, inhibit the convection and vortex phenomenon of the center area above the tray due to the rotation of the tray and the thermal buoyancy, improve the utilization efficiency of the gas source, and improve the epitaxial growth uniformity of the wafer.

Description

Technical Field

[0001] This invention relates to the field of semiconductor deposition technology, and more particularly to a tray and an epitaxial growth reaction chamber used for epitaxial growth. Background Technology

[0002] Epitaxial growth is a process in which reactive gases are delivered onto a high-temperature wafer, and a thin film is grown on the wafer through a chemical reaction.

[0003] Figure 19 This is a reaction chamber 600 of an existing epitaxial growth apparatus. Several substrates W are placed on a wafer tray 400 within the reaction chamber 600. An air inlet device 500 is positioned opposite the wafer tray 400, and an exhaust device 800 is located below the reaction chamber 600. During epitaxial growth, the reaction gas is transported along path 900 from above the reaction chamber 600 to the surface of the wafer tray 400, then along the surface of the wafer tray 400 to its outer edge (along path 902), and finally discharged from the interior of the reaction chamber 600 by the exhaust device 800 along path 904. During epitaxial growth, the wafer tray 400 typically rotates. The linear velocity of the tray surface is inversely proportional to its diameter, decreasing towards the center and reaching zero at the center point. The rotation of the tray affects the airflow above it. Due to the low linear velocity in the central region of the tray, the horizontal airflow velocity above the center is very low or even zero, easily forming a gas stagnation zone above the center of the tray. Under certain conditions, this can lead to vortices, such as... Figure 20 As shown.

[0004] When the tray temperature rises, the gas above the tray that is closer to the tray is preheated than the gas further above. This gas will move upward under the action of thermal buoyancy, generating convection, which will intensify the formation of eddies, reduce the utilization efficiency of the gas source in the central area above the tray, and affect the uniformity of epitaxial growth of the wafer on the tray.

[0005] To address the aforementioned issues, common methods include adding a purge gas outlet in the central area of ​​the air intake device to suppress vortex generation in the central area above the tray through airflow adjustment, or adjusting the overall flow field within the reaction chamber. However, both methods require adjusting the airflow to suppress vortex generation in the central area, which is time-consuming and labor-intensive, and also reduces the process debugging window. Summary of the Invention

[0006] The purpose of this invention is to provide a tray and an epitaxial growth reaction chamber for use in epitaxial growth, so as to suppress convection and eddy current phenomena in the central area above the tray due to tray rotation and thermal buoyancy, and improve the problems of low gas source utilization and low uniformity of wafer epitaxial growth in the reaction chamber of the prior art.

[0007] To achieve the above objectives, the present invention provides a tray for epitaxial growth, the tray comprising a discrete first component and a second component.

[0008] The upper surface of the first component is provided with multiple wafer-carrying areas for placing wafers. The central region of the first component is provided with a through recess, which is not a wafer-carrying area. The recess communicates with the space on the upper surface side of the tray.

[0009] The lower surface of the first component and / or the upper surface of the second component are provided with one or more grooves along the radial direction of the tray, the grooves communicating with the space on the outer side of the tray and the recess.

[0010] The first component and the second component are stacked and combined from top to bottom to form an air channel inside the tray, which is used to connect the space on the upper surface of the tray and the space on the outer surface of the tray.

[0011] In one feasible embodiment, the recess is a through hole, the central axis of the through hole coincides with the central axis of the tray, and the groove communicates with the through hole.

[0012] In one feasible embodiment, a first air guide is provided in the through hole, the outer diameter of the first air guide is smaller than the outer diameter of the through hole, and an annular channel is formed between the through hole and the first air guide, the annular channel being connected to the space on the upper surface side of the tray and the groove.

[0013] In one feasible embodiment, the top end of the first air guide is flush with the upper surface of the tray, or the top end of the first air guide protrudes from the upper surface of the tray.

[0014] In one feasible embodiment, the first air guide includes a cylindrical portion and a conical portion, wherein the interface between the cylindrical portion and the conical portion is flush with or lower than the upper surface of the tray.

[0015] In one feasible embodiment, the cylindrical portion and the tapered portion are integrally formed components or are separate components.

[0016] In one feasible embodiment, the size of the first air guide gradually decreases in the direction from the lower surface of the tray to the upper surface of the tray.

[0017] In one feasible embodiment, the first air guide is a separate component, or the first air guide is a protrusion provided by the central region of the second component in a direction toward the first component.

[0018] In one feasible embodiment, the recess is an annular groove, the central axis of which coincides with the central axis of the tray, and the groove communicates with the annular groove.

[0019] In one feasible embodiment, a second air guide is provided on the solid portion of the region surrounded by the annular groove on the first component, and the size of the second air guide gradually decreases in the direction from the lower surface of the tray to the upper surface of the tray.

[0020] In one feasible embodiment, the recess is a plurality of tubular channels, the number of which is the same as the number of grooves, and the tubular channels are connected to the grooves in a one-to-one correspondence.

[0021] In one feasible embodiment, each of the tubular channels and the corresponding groove are located in the same longitudinal section.

[0022] In one feasible embodiment, the tubular channels are evenly distributed around the central axis of the tray, and a third air guide is provided on the solid portion of the area on the tray surrounded by the tubular channels, the size of the third air guide gradually decreasing in the direction from the lower surface of the tray to the upper surface of the tray.

[0023] In one feasible embodiment, the distance from each location on the groove to the upper surface of the tray gradually increases in the direction from the center of the tray to the outer side of the tray.

[0024] In one feasible embodiment, the groove is an arc-shaped channel, and the arrangement direction of the arc-shaped channel is opposite to the rotation direction of the tray during the epitaxial growth process.

[0025] In one feasible embodiment, the plurality of wafer carrier regions are uniformly arranged circumferentially on the upper surface of the first component, and each wafer carrier region is provided with at least one receiving groove for placing wafers.

[0026] In one feasible embodiment, the grooves are evenly arranged in a plurality along the circumference.

[0027] In one feasible embodiment, at least one of the trenches is located between two adjacent wafer carrier regions on the circumference, and / or at least one of the trenches is located under the receiving groove.

[0028] The present invention also provides an epitaxial growth reaction chamber, including an air inlet device, a drive device, and the tray described in any of the above embodiments;

[0029] The tray is disposed in the reaction chamber and connected to the driving device. The driving device is used to drive the tray to rotate during the epitaxial growth process. The tray is used to place the wafer to be processed.

[0030] The air intake device is disposed opposite to the tray, and the air intake device is used to input gas source material for wafer processing into the reaction chamber during the epitaxial growth process;

[0031] Furthermore, during the epitaxial growth reaction, a portion of the reaction gas in the central region of the reaction chamber exits from the outer side of the tray via the gas guide channel.

[0032] Compared with the prior art, the present invention has the following advantages:

[0033] This invention addresses airflow from the perspective of guiding airflow. By configuring a tray as a separate first and second component, and providing one or more grooves along the radial direction of the tray on the lower surface of the first component and / or the upper surface of the second component, these grooves communicate with the space on the outer side of the tray and the recessed portion. After the first and second components are stacked and combined, an air-guiding channel is formed inside the tray, allowing gas at the center of the tray to flow to the outside during use. Thus, during the epitaxial growth reaction, due to the tray's rotation, the pressure difference between the upper side of the tray's central region and the outer side of the tray, and utilizing the Venturi principle, allows a portion of the gas on the upper side of the tray to flow to the outside of the tray through the air-guiding channel. This increases the gas flow velocity in the central region above the tray, reduces airflow stagnation in the central region, and suppresses convection and eddy currents caused by tray rotation and thermal buoyancy in the central region above the tray. This results in a larger area of ​​uniform gas source distribution, increasing the effective contact between the gas and the wafer, thereby improving the utilization efficiency of the gas source and enhancing the uniformity of wafer epitaxial growth. Furthermore, since the area with a more uniform gas source distribution is larger, more wafers can be arranged on the tray, which can increase production capacity and reduce wafer manufacturing costs. Attached Figure Description

[0034] Figures 1 to 12 This is a schematic diagram of the structure of the tray used for epitaxial growth in the first embodiment of the present invention;

[0035] Figure 13 This is a schematic diagram of the structure of the tray used for epitaxial growth in the second embodiment of the present invention;

[0036] Figure 14 This is a schematic diagram of the structure of the tray used for epitaxial growth in the third embodiment of the present invention;

[0037] Figure 15This is a schematic diagram of the structure of the tray used for epitaxial growth in the fourth embodiment of the present invention;

[0038] Figure 16 This is a schematic diagram of the structure of the tray used for epitaxial growth in the fifth embodiment of the present invention;

[0039] Figure 17 This is a schematic diagram of the structure of the tray used for epitaxial growth in the sixth embodiment of the present invention;

[0040] Figure 18 This is a schematic cross-sectional view of the epitaxial growth reaction chamber in an embodiment of the present invention.

[0041] Figure 19 This is a schematic cross-sectional view of an epitaxial growth reaction chamber in the prior art.

[0042] Figure 20 This is a flow field simulation diagram of an epitaxial growth reaction chamber in the prior art.

[0043] Numbering on the map:

[0044] 1. First component; 101. Wafer carrier area; 102. Central region; 103. Recess; 104. Through hole; 105. Annular groove; 106. Tubular channel; 107. Receiving groove;

[0045] 2. Second component; 201. Groove; 202. Air guide channel;

[0046] 3. First air guide component; 301. Cylindrical part; 302. Conical part;

[0047] 4. Second air guide component;

[0048] 5. Third air guide component;

[0049] 6. Air intake device;

[0050] 7. Drive unit;

[0051] 8. Reaction chamber;

[0052] 9. Tray. Detailed Implementation

[0053] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0054] To address the problems existing in the prior art, on one hand, embodiments of the present invention provide a tray for epitaxial growth, the tray comprising a separate first component and a second component. The upper surface of the first component is provided with a plurality of wafer-carrying areas for placing wafers. The central region of the first component is provided with a through recess, the central region being a non-wafer-carrying area. The recess communicates with the space on the upper surface side of the tray. The lower surface of the first component and / or the upper surface of the second component are provided with one or more grooves along the radial direction of the tray. The grooves communicate with the space on the outer side of the tray and the recess. The first component and the second component are stacked and combined from top to bottom to form an air guiding channel inside the tray, for guiding the space on the upper surface side of the tray and the space on the outer side of the tray.

[0055] The tray will now be described in detail with reference to Embodiments 1 to 6 and the accompanying drawings.

[0056] Example 1

[0057] refer to Figure 1 and Figure 2 The tray 9 used for epitaxial growth includes a separate first component 1 and a second component 2. The upper surface of the first component 1 is provided with a plurality of wafer support areas 101 for placing wafers. The central region 102 of the first component 1 is provided with a through recess 103. The central region 102 is a non-wafer support area. The recess 103 communicates with the space on the upper surface side of the tray 9. The lower surface of the first component 1 and / or the upper surface of the second component 2 are provided with one or more grooves 201 along the radial direction of the tray 9. The grooves 201 communicate with the space on the outer side of the tray 9 and the recess 103. The first component 1 and the second component 2 are stacked and combined from top to bottom to form an air guide channel 202 inside the tray 9, which is used to guide the space on the upper surface side of the tray 9 and the space on the outer side of the tray 9.

[0058] In some specific embodiments, reference is made to Figure 1 and Figure 2 The tray 9 is disc-shaped and horizontally positioned. The area where the wafer-carrying area 101 is located is referred to as the outer perimeter. The central region 102 and the outer perimeter are coaxially arranged around the central axis of the tray 9, with the outer perimeter located outside the central region 102. The central region 102 has a recessed portion 103 penetrating the first component 1. The upper surface of the tray 9 is the upper surface of the first component 1. The area on the upper surface of the first component 1, excluding the central region 102, is the area for placing the wafer. In other words, the area occupied by the wafer on the tray 9 does not cover the center of the tray 9. The lower surface of the first component 1 and the upper surface of the second component 2 are both provided with grooves 201, and the grooves 201 on the first component 1 and the second component 2 are correspondingly arranged. When in use, the first component 1 is fastened to the upper side of the second component 2. At this time, the grooves 201 on the two components and the recessed portion 103 together form the air guide channel 202.

[0059] In some specific embodiments, the wafer carrier area 101 is evenly distributed around the central axis of the tray 9, and the wafer carrier area 101 is set in at least one circle on the circumference of the tray 9. Then the area of ​​the central region 102 does not exceed the area of ​​the circle inscribed in each wafer carrier area 101 at the central axis of the tray 9.

[0060] In some embodiments, the plurality of wafer carrier areas 101 are evenly arranged circumferentially on the upper surface of the first component 1, and each wafer carrier area 101 is provided with at least one receiving groove 107 for placing a wafer. In some specific embodiments, the wafer carrier areas 101 are evenly distributed around the central axis of the tray 9 in two or three circumferences.

[0061] In some specific embodiments, refer to Figure 1 The upper surface of the first component 1 is provided with a plurality of wafer carrier areas 101. The plurality of wafer carrier areas 101 are evenly distributed around the central axis of the tray 9. Each wafer carrier area 101 is provided with a receiving groove 107 for placing wafers. Figure 1 The entire tray 9 is shown schematically only, comprising six wafer carrier areas 101, each with a receiving slot 107. In practice, the entire tray 9 can be configured with different numbers of wafer carrier areas 101 as needed, and each wafer carrier area 101 can also accommodate two or more receiving slots 107 for placing wafers.

[0062] In some other specific embodiments, the tray 9 is provided with a plurality of wafer carrying areas 101, which are evenly distributed in two circles around the central axis of the tray 9. Each wafer carrying area 101 is provided with a receiving groove 107 for placing wafers.

[0063] In some specific embodiments, such as Figure 3 As shown, the tray 9 is provided with multiple wafer carrying areas 101. The multiple wafer carrying areas 101 are evenly distributed around the central axis of the tray 9. Each wafer carrying area 101 is provided with multiple receiving slots 107 for placing wafers. The relative positions of the receiving slots 107 in the wafer carrying area 101 are the same, thus forming that the receiving slots 107 in the wafer carrying area 101 are evenly distributed on the circumference.

[0064] In some embodiments, the grooves 201 are evenly distributed around the circumference of the tray 9.

[0065] In some embodiments, at least one trench 201 is disposed between two adjacent wafer carrying areas 101 on the circumference of the tray 9, such as Figure 1 and Figure 4 .

[0066] In some embodiments, at least one trench 201 is disposed below a receiving groove 107 for placing a wafer within a wafer carrier region 101, such as... Figure 5 .

[0067] In some embodiments, at least one of the plurality of trenches 201 is disposed on the lower side of the receiving groove 107, and at least one of the plurality of trenches 201 is disposed between two adjacent wafer carrier regions 101, such as Figure 6 .

[0068] In some specific embodiments, refer to Figure 7 The recessed portion 103 is a through hole 104, which is coaxially arranged with the tray 9. The through hole 104 penetrates the first component 1 and communicates with the groove 201 to form the air guide channel 202. The plurality of wafer carrying areas 101 are evenly arranged on the upper surface of the first component 1.

[0069] In some specific embodiments, refer to Figure 2 The lower surface of the first component 1 and the upper surface of the second component 2 each have one, two or more grooves 201, and the grooves 201 on each of the first components 1 are respectively provided in a one-to-one correspondence with the grooves 201 on each of the second components 2.

[0070] In some specific embodiments, refer to Figure 7The lower surface of the first component 1 is provided with one or more grooves 201, while the upper surface of the second component 2 is not provided with grooves 201.

[0071] In some specific embodiments, refer to Figure 8 The lower surface of the first component 1 is not provided with grooves 201, while the upper surface of the second component 2 is provided with one or more grooves 201.

[0072] In some specific embodiments, refer to Figure 8 The groove 201 on the lower surface of the first component 1 and / or the upper surface of the second component 2 is arc-shaped when mapped onto the vertical plane.

[0073] In some specific embodiments, refer to Figure 9 The lower surface of the first component 1 and the upper surface of the second component 2 extend horizontally outward from the tray 9, such that the distance from each position on the groove 201 to the upper surface of the tray 9 is the same in the direction from the center of the tray to the outer side of the tray.

[0074] In some specific embodiments, the lower surface of the first component 1 and the upper surface of the second component 2 extend obliquely outwards towards the tray 9, such that the distance from various positions on the groove 201 to the upper surface of the tray 9 gradually varies along the direction from the center of the tray to the outer side of the tray. In some specific embodiments, the distance from the end of the groove 201 near the outer side of the tray 9 to the upper side of the tray 9 is greater than the distance from the end of the groove 201 near the central region 102 of the tray 9 to the upper side of the tray 9. That is, the position of the groove 201 near the central region 102 is relatively high, and the tubular channel 106 is located above the groove 201, which facilitates the discharge of gas above the central region 102 of the tray 9 through the gas guide channel 202. (Refer to...) Figure 10 The groove 201 is configured as a zigzag channel, which can be composed of two or more zigzag channels. The zigzag channel closest to the center of the tray 9 has the highest height inside the tray 9, and the zigzag channel closest to the outer side of the tray 9 has the lowest height inside the tray 9. In some specific embodiments, refer to... Figure 11 In the direction from the center of the tray 9 to the outside of the tray 9, the height of the groove 201 inside the tray 9 gradually decreases or the depth gradually increases. That is, as the groove 201 gradually extends outward, the distance of the point on the groove 201 from the upper side of the tray 9 gradually increases.

[0075] In some specific embodiments, refer to Figure 12The groove 201 is an arc-shaped channel. Specifically, the shape of the groove 201 mapped onto the upper surface of the first component 1 is arc-shaped, and the arrangement direction of the arc-shaped channel is opposite to the rotation direction of the tray 9 during epitaxial growth. Since the tray 9 rotates at high speed during epitaxial growth, this arrangement of the arc-shaped channel facilitates the discharge of gas as the tray 9 rotates. If the arrangement direction of the arc-shaped channel is the same as the rotation direction of the tray 9 during epitaxial growth, it will weaken or counteract the negative pressure effect caused by the Venturi effect, which is not conducive to gas discharge.

[0076] In some embodiments, the cross-section of the air guide channel 202 is circular. In some other embodiments, the cross-section of the air guide channel 202 is elliptical, square, or hexagonal.

[0077] In Embodiment 1, the recessed portion 103 located in the central region 102 of the first component 1 and the one or more grooves 201 are located inside the tray 9 and together form the gas guiding channel 202 inside the tray 9. During the epitaxial growth process, utilizing the pressure difference between the upper side of the central region 102 of the tray 9 and the outer side of the tray 9, and utilizing the Venturi principle, part of the reactive gas in the central region 102 above the tray 9 enters the recessed portion 103 and then flows out from the outer side of the tray 9 through the one or more grooves 201. This increases the gas flow velocity in the central region 102 above the tray 9 and reduces the gas flow retention in the central region 102 above the tray 9, thereby suppressing the convection and eddy current phenomena generated in the central region 102 above the tray 9 due to the rotation of the tray 9 and thermal buoyancy. This makes the area of ​​uniform gas source distribution larger, increases the effective contact between the gas and the wafer, thereby improving the utilization efficiency of the gas source and improving the uniformity of wafer epitaxial growth. Furthermore, since the area of ​​uniform gas source distribution is larger, more wafers can be arranged on the tray 9, which can increase production capacity and reduce wafer fabrication costs.

[0078] Example 2

[0079] The difference between Embodiment 2 and Embodiment 1 is that in Embodiment 2, a first air guide 3 is provided inside the through hole 104, as shown in the figure. Figure 13 A first air guide 3 can be provided on the solid portion of the second component 2 corresponding to the through hole 104. The outer diameter of the first air guide 3 is smaller than the outer diameter of the through hole 104, and an annular channel is formed between the through hole 104 and the first air guide 3. The annular channel communicates with the space on the upper surface side of the tray 9 and the groove 201. Thus, the annular channel between the recess 103 and the first component 1 forms part of the air guide channel 202, and the annular channel communicates with the one or more grooves 201. The first air guide 3 is fixedly or detachably disposed on the upper surface of the second component 2.

[0080] In some embodiments, the top end of the first air guide 3 is flush with the upper surface of the tray 9, or the top end of the first air guide 3 protrudes from the upper surface of the tray 9.

[0081] In some specific embodiments, reference is made to Figure 13 The first air guide 3 includes a cylindrical portion 301 and a conical portion 302. The interface between the cylindrical portion 301 and the conical portion 302 is flush with the upper surface of the tray 9. The cylindrical portion 301 and the conical portion 302 are integrally formed or separate components. For example, the lower side of the first air guide 3 is cylindrical, and the upper side of the first air guide 3 is conical. The upper conical shape and the lower cylindrical shape are integrally formed, or the upper conical shape is detachably connected to the lower cylindrical shape. The apex of the upper conical shape of the first air guide 3 is higher than the height of the upper surface of the tray 9.

[0082] In some embodiments, the lower side of the first air guide 3 is configured as a cylindrical or regular polygonal prism.

[0083] In some embodiments, the upper side of the first air guide 3 is configured as a cone or a regular polygonal pyramid.

[0084] In some embodiments, the interface between the cylindrical portion 301 and the tapered portion 302 is lower than the upper surface of the tray 9.

[0085] In some embodiments, the size of the first air guide 3 gradually decreases in the direction from the lower surface of the tray 9 to the upper surface of the tray 9. Specifically, the size of the first air guide 3 gradually decreases in the direction from the lower surface of the first component 1 to the upper surface of the first component 1.

[0086] In some embodiments, the first air guide 3 is a separate component, or the first air guide 3 is a protrusion provided by the central region 102 of the second component 2 in a direction toward the first component 1.

[0087] In Embodiment 2, based on Embodiment 1, a first air guide 3 is provided, which can guide the airflow in the central region 102 above the tray 9 into the air guide channel 202, making it easier for the gas in the central region 102 to be discharged, and further reducing the retention of airflow in the central region 102 above the tray 9. Furthermore, the top end of the first air guide 3 is set as a cone with a gradually decreasing size. On the one hand, this can change the spatial shape of the flow field and reduce the volume of the gas retention area; on the other hand, it can more effectively guide the gas to flow along the side wall of the cone-shaped structure into the air guide channel 202, suppressing convection and eddy current phenomena caused by the rotation of the tray 9 and thermal buoyancy.

[0088] Example 3

[0089] The difference between Embodiment 3 and Embodiment 1 is that in Embodiment 1, the recessed portion 103 is a through hole 104, the central axis of which coincides with the central axis of the tray 9, and the through hole 104 and the groove 201 form the air guide channel 202, which connects the upper surface and the outer side surface of the tray 9. In Embodiment 3, referring to… Figure 14 The recessed portion 103 is an annular groove 105, the central axis of the annular groove 105 coincides with the central axis of the tray 9, the groove 201 communicates with the annular groove 105, and the groove 201 and the annular groove 105 form the air guide channel 202.

[0090] There can be one or more grooves 201. When there are multiple grooves 201, each groove 201 is connected to the annular groove 105.

[0091] In Embodiment 3, the annular groove 105 located in the central region 102 and one or more grooves 201 extending radially along the tray 9 and connected to the annular groove 105 together form the air guiding channel 202 inside the tray 9. During the epitaxial growth process, by utilizing the pressure difference between the upper side of the central region 102 of the tray 9 and the outer side of the tray 9, and by utilizing the Venturi principle, part of the reactive gas in the central region 102 above the tray 9 enters the annular groove 105, and then flows out from the outer side of the tray 9 through one or more grooves 201, reducing the retention of airflow in the central region 102 above the tray 9, thereby suppressing the generation of vortices in the central region 102 above the tray 9.

[0092] Example 4

[0093] The difference between Example 4 and Example 3 is that in Example 4, referring to... Figure 15 The first component 1 has a second air guide 4 on the solid portion of the area surrounded by the annular groove 105. The size of the second air guide 4 gradually decreases in the direction from the lower surface of the tray 9 to the upper surface of the tray 9.

[0094] In some specific embodiments, the area of ​​the contact surface between the second air guide 4 and the solid portion of the central region 102 surrounded by the annular groove 105 is not greater than the area of ​​the solid portion of the central region 102 surrounded by the annular groove 105.

[0095] In Embodiment 4, a second air guide 4 is added based on Embodiment 3. This second air guide 4 guides the airflow in the central region 102 above the tray 9 into the air guide channel 202, making it easier for the gas in the central region 102 to exit and further reducing the retention of airflow in the central region 102 above the tray 9. Furthermore, by setting the second air guide 4 to gradually decrease in size, the spatial morphology of the flow field can be changed, reducing the volume of the gas retention area and more effectively guiding the gas along the sidewall of the conical structure into the air guide channel 202, suppressing convection and eddy current phenomena caused by the rotation of the tray 9 and thermal buoyancy.

[0096] Example 5

[0097] The difference between Embodiment 5 and Embodiment 3 is that in Embodiment 3, the recessed portion 103 is an annular groove 105, the central axis of the annular groove 105 coincides with the central axis of the tray 9, and the groove 201 communicates with the annular groove 105. However, in Embodiment 5, referring to... Figure 16 The recessed portion 103 is a plurality of tubular channels 106, the number of tubular channels 106 is the same as the number of grooves 201, and the tubular channels 106 and the grooves 201 are connected in a one-to-one correspondence.

[0098] In some embodiments, the plurality of tubular channels 106 are evenly distributed or staggered around the central axis of the tray 9. In some specific embodiments, the tray 9 has a plurality of cylindrical holes evenly distributed around the circumference of the central axis, and the plurality of cylindrical holes together form the recess 103. In some specific embodiments, the plurality of cylindrical holes are not distributed on the same circumference, but may be distributed on multiple circumferences. In some specific embodiments, the plurality of cylindrical holes are staggered, so that the air inlet of the conductor channel can be located close to the center of the original vortex that is easy to form, which can directly affect the area where vortices are easy to form and reduce the possibility of vortex formation. In some embodiments, the various tubular channels 106 are not interconnected.

[0099] In some embodiments, the tubular channel 106 and the groove 201 corresponding to the tubular channel 106 are located in the same longitudinal section, and the longitudinal sections of each tubular channel 106 and the corresponding groove 201 are evenly distributed on the circumference of the tray.

[0100] In Embodiment 5, multiple tubular channels 106 located in the central region 102 and grooves 201 extending radially along the tray 9 and correspondingly connected to the multiple tubular channels together form the gas guiding channel 202 inside the tray 9. During the epitaxial growth process, utilizing the pressure difference between the upper side of the central region 102 of the tray 9 and the outer side of the tray 9, and utilizing the Venturi principle, part of the reactive gas in the central region 102 above the tray 9 enters the tubular channels 106 and then flows out from the outer side of the tray 9 through the multiple grooves 201. This increases the gas flow velocity in the central region 102 above the tray 9 and reduces the gas flow retention in the central region 102 above the tray 9, thereby suppressing the convection and eddy current phenomena in the central region 102 above the tray 9 caused by the rotation of the tray 9 and thermal buoyancy. This makes the area of ​​uniform gas source distribution larger, increases the effective contact between the gas and the wafer, thereby improving the utilization efficiency of the gas source and improving the uniformity of wafer epitaxial growth. Furthermore, since the area with uniform gas source distribution is larger, more wafers can be arranged on tray 9, which can increase production capacity and reduce wafer manufacturing costs.

[0101] Example 6

[0102] The difference between Example 6 and Example 5 is that in Example 6, referring to... Figure 17 The tubular channels 106 are evenly distributed around the central axis of the tray 9. A third air guide 5 is provided on the solid part of the area surrounded by the tubular channels 106 on the tray 9. The size of the third air guide 5 gradually decreases in the direction from the lower surface of the tray 9 to the upper surface of the tray 9.

[0103] In some specific embodiments, the area of ​​the contact surface between the third air guide 5 and the solid portion of the central region 102 surrounded by the plurality of tubular channels 106 is not greater than the area of ​​the solid portion of the central region 102 surrounded by the plurality of tubular channels 106.

[0104] In some specific embodiments, reference is made to Figure 17 The third air guide 5 is configured as a cone and is coaxially arranged with the tray 9.

[0105] In Embodiment Six, a third air guide 5 is added based on Embodiment Five. This third air guide 5 guides the airflow in the central region 102 above the tray 9 into the air guide channel 202, making it easier for the gas in the central region 102 to exit and further reducing the retention of airflow in the central region 102 above the tray 9. Furthermore, by setting the third air guide 5 to gradually decrease in size, the spatial morphology of the flow field can be changed, reducing the volume of the gas retention area and more effectively guiding the gas along the sidewall of the conical structure into the air guide channel 202, suppressing convection and eddy current phenomena caused by the rotation of the tray 9 and thermal buoyancy.

[0106] On the other hand, the present invention provides an epitaxial growth reaction chamber 8, with reference to Figure 18 It shows a cross-sectional structural diagram of the epitaxial growth reaction chamber 8 of the present invention.

[0107] The epitaxial growth reaction chamber 8 includes an air inlet device 6, a drive device 7, and a tray 9 as described in any of the above embodiments. The tray 9 is disposed inside the reaction chamber 8 and is connected to the drive device 7. The drive device 7 is used to rotate the tray 9 during the epitaxial growth process. The tray 9 is used to place the wafer to be processed. The air inlet device 6 is disposed opposite to the tray 9. The air inlet device 6 is used to supply gas source material for wafer processing into the reaction chamber 8 during the epitaxial growth process. During the epitaxial growth reaction, part of the reaction gas in the central region 102 of the reaction chamber 8 is discharged from the outer side of the tray 9 through the gas guide channel 202.

[0108] The epitaxial growth reaction chamber 8 described in this invention is suitable for growing various III-V group, II-VI thin films or two-dimensional thin film materials, etc., and the epitaxial process reactions involved include metal-organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), etc.

[0109] In some specific embodiments of the present invention, the reaction chamber 8 is sealed, the rotating shaft of the driving device 7 extends into the reaction chamber 8, the tray 9 is fixed on the rotating shaft, and the air intake device 6 is connected to the gas source and located inside the reaction chamber 8. Exemplarily, for a vertical upright epitaxial growth reaction chamber 8, the air intake device 6 is disposed on the upper side of the tray 9 and is used to supply the epitaxial growth gas source material to the tray 9. The gas source material flows from above the tray 9 to the upper surface of the tray 9. A portion of the gas on the upper side of the central region 102 of the tray 9 flows to the outside of the tray 9 through the air guide channel 202 inside the tray 9, reducing the retention of airflow in the central region 102 above the tray 9, thereby suppressing convection and eddy current phenomena in the central region 102 above the tray 9 due to the rotation of the tray 9 and thermal buoyancy.

[0110] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A tray for use in epitaxial growth, characterized by, The tray includes a separate first component and a second component; The upper surface of the first component is provided with multiple wafer support areas for placing wafers, and the central region of the first component is provided with a through recess, which is a non-wafer support area, and the recess is connected to the space on the upper surface side of the tray. The lower surface of the first component and / or the upper surface of the second component are provided with one or more grooves along the radial direction of the tray, and the grooves communicate with the space on the outer side of the tray and the recess; Along the direction from the center of the tray to the outer side of the tray, the distance from each position on the groove to the upper surface of the tray gradually increases; The first component and the second component are stacked and combined from top to bottom to form an air channel inside the tray, which is used to connect the space on the upper surface of the tray and the space on the outer surface of the tray. The recess is either a through hole or an annular groove. When the recess is a through hole, the central axis of the through hole coincides with the central axis of the tray. A first air guide is provided inside the through hole, and the outer diameter of the first air guide is smaller than the outer diameter of the through hole, so that the gas in the central area of ​​the tray can be more easily discharged. An annular channel is formed between the through hole and the first air guide, and the annular channel communicates with the space on the upper surface side of the tray and the groove. When the recess is an annular groove, the central axis of the annular groove coincides with the central axis of the tray, and the groove communicates with the annular groove. A second air guide is provided on the solid part of the area surrounded by the annular groove on the first component, so that the gas in the central area of ​​the tray can be more easily discharged.

2. The tray of claim 1, wherein, The top end of the first air guide is flush with the upper surface of the tray, or the top end of the first air guide protrudes from the upper surface of the tray.

3. The tray of claim 2, wherein, The first air guide includes a cylindrical part and a conical part, and the interface between the cylindrical part and the conical part is flush with or lower than the upper surface of the tray.

4. The tray of claim 3, wherein, The cylindrical part and the conical part are either integrally formed components or separate components.

5. The tray of claim 2, wherein, The size of the first air guide gradually decreases in the direction from the lower surface of the tray to the upper surface of the tray.

6. The pallet according to claim 1, characterized in that, The first air guide is an independent component, or the first air guide is a protrusion provided from the central region of the second component in a direction toward the first component.

7. The tray according to claim 1, characterized in that, The size of the second air guide gradually decreases in the direction from the lower surface of the tray to the upper surface of the tray.

8. The pallet according to claim 1, characterized in that, The recessed portion comprises multiple tubular channels, the number of which is the same as the number of grooves, and the tubular channels and grooves are connected in a one-to-one correspondence.

9. The tray according to claim 8, characterized in that, Each of the tubular channels and the corresponding groove are located in the same longitudinal section.

10. The tray according to claim 8, characterized in that, The tubular channels are evenly distributed around the central axis of the tray. A third air guide is provided on the solid portion of the area on the tray surrounded by the tubular channels. The size of the third air guide gradually decreases in the direction from the lower surface of the tray to the upper surface of the tray.

11. The tray according to claim 1, characterized in that, The groove is an arc-shaped channel, and the arrangement direction of the arc-shaped channel is opposite to the rotation direction of the tray during the epitaxial growth process.

12. The pallet according to claim 1, characterized in that, The plurality of wafer carrier areas are evenly arranged circumferentially on the upper surface of the first component, and each wafer carrier area is provided with at least one receiving groove for placing wafers.

13. The pallet according to claim 12, characterized in that, The grooves are evenly distributed in multiple places along the circumference.

14. The pallet according to claim 12, characterized in that, There is at least one of the trenches located between two adjacent wafer carrier areas on the circumference, and / or there is at least one of the trenches located on the underside of the receiving groove.

15. An epitaxial growth reaction chamber, characterized in that, Includes an air intake device, a drive device, and a tray as described in any one of claims 1 to 14; The tray is disposed in the reaction chamber and connected to the driving device. The driving device is used to drive the tray to rotate during the epitaxial growth process. The tray is used to place the wafer to be processed. The air intake device is disposed opposite to the tray, and the air intake device is used to input gas source material for wafer processing into the reaction chamber during the epitaxial growth process; Furthermore, during the epitaxial growth reaction, a portion of the reaction gas in the central region of the reaction chamber exits from the outer side of the tray via the gas guide channel.

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