A method for constructing a two-dimensional lateral p-n homojunction by low-energy ion implantation doping

Abstract

The application belongs to the technical field of nanomaterials, and discloses a method for constructing a two-dimensional lateral p-n homojunction by using low-energy ion implantation doping. A few-layer two-dimensional material is obtained by mechanical exfoliation, and a spin-coated PMMA covering material is used as a mask layer. Selected areas of the two-dimensional material are exposed by using electron beam exposure and development, and the unexposed areas are still covered by PMMA. Doping ions are implanted into the exposed two-dimensional material by using a low-energy ion implantation technology, and a lateral p-n homojunction is obtained after acetone treatment. Rapid thermal annealing treatment is used to repair the lattice damage caused by implantation and activate the doping ions. The application realizes the regulation of the conduction type of the two-dimensional material by spatially selecting and doping the few-layer two-dimensional material by using low-energy ion implantation, reverses the conduction type of the two-dimensional material, and constructs a two-dimensional lateral p-n homojunction. The method is controllable in terms of doping concentration and depth, uniform in terms of doping area, pollution-free in terms of the doping process, and rich in types of doping elements, and provides an effective way for the spatially selected doping modification of two-dimensional semiconductors.

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