Gct component package structure

Abstract

This invention provides a GCT element packaging structure, including a GCT chip. The anode of the GCT chip is connected to an anode molybdenum sheet, which is connected to an anode copper block. An anode skirt extends from the anode copper block. The cathode of the GCT chip is connected to a cathode molybdenum sheet, which is connected to a cathode copper base. A cathode skirt extends from the cathode copper base. The gate of the GCT chip is connected to a gate lead-out ring, which is connected to a gate lead-out flange. The gate lead-out flange includes a gate skirt with a concave pleated structure facing the cathode skirt. An insulating ceramic ring is disposed between the anode skirt and the cathode skirt, and the gate lead-out flange divides the insulating ceramic ring into upper and lower parts. The GCT element packaging structure of this invention reduces parasitic inductance without introducing new materials or processes, and is not limited by the design thickness of the lower part of the insulating ceramic ring.

Description

Technical Field

[0001] This invention relates to the field of power semiconductor device technology, and more specifically to a GCT element packaging structure. Background Technology

[0002] As a fully controllable power semiconductor device, the IGCT (Inductively Coupled Transformer) has great potential for application in flexible DC power grids due to its advantages such as high blocking capability, low conduction loss, and high turn-off current. With the increasing demand for IGCTs in power grids and industrial drives, the required turn-off current of these devices is gradually increasing. The turn-off capability of an IGCT is closely related to the parasitic inductance of its package structure.

[0003] The cathode of a gate commutated thyristor (GCT) is typically formed by a series of tiny combs arranged around a continuously connected gate region. The design of the chip gate position determines the gate lead-out method of the package. Chip gates are generally classified into three types based on their location design: 1) Center gate: The gate is located at the center of the chip and is circular. The distance difference between the center gate and the cathode combs at various points on the chip is relatively large. During the turn-off process, the current after the gate cathode commutates is transmitted from the outside to the center. The current concentration at the center can easily lead to a high current density and current filamentation phenomenon. In addition, the corresponding package structure has a large parasitic inductance, making it more suitable for devices with low current capacity; 2) Ring gate: The gate is located in the middle of the chip and is circular. During the turn-off process, the current after the gate cathode commutates is transmitted bidirectionally from the center to the inner and outer rings of the device. The current density at the middle ring gate is moderate, and the corresponding package structure has a moderate parasitic inductance, making it more suitable for devices with moderate or high current capacity; 3) Edge gate: The gate is located at the edge of the chip and is circular. During the turn-off process, the current after the gate cathode commutates is transmitted from the center to the outer ring of the chip. Furthermore, the contact area of ​​the outer edge gate is larger, the current density is low, and the corresponding package structure has a low parasitic inductance, making it more suitable for devices with high current capacity.

[0004] With the development of GCT chip technology, its turn-off current capacity has gradually increased, thus necessitating a reduction in the parasitic inductance of the GCT package. Existing technologies for reducing the parasitic inductance of the GCT package structure focus on two main aspects: reducing the thickness of the lower ceramic ring to decrease the gate-cathode circuit, thereby reducing parasitic inductance; and adopting an edge-gate design to reduce the gate-cathode circuit, thereby reducing the circuit area and achieving low inductance. The main problems with these technologies are as follows: eliminating the lower ceramic ring design and reducing the gate-cathode circuit lowers parasitic inductance, but requires the use of new materials for sealing, necessitating high-temperature resistant insulating sealing materials, which reduces component manufacturability and makes component manufacturing and sealing difficult; proposing to reduce the lower ceramic ring thickness to ≤2mm requires the introduction of new processes, increasing device manufacturing costs; in existing edge-gate designs, components such as the insulating base, disc spring, and gasket in the gate spring assembly are located below the gate lead, making bottom-up assembly impossible, resulting in significant difficulties in assembly operations within the limited area of ​​the edge gate. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to overcome the shortcomings of the prior art and provide a GCT component packaging structure that reduces parasitic inductance without the need to introduce new materials or processes and is not limited by the design thickness of the lower part of the insulating ceramic ring, thereby improving the manufacturability of the packaged component.

[0006] To solve the above-mentioned technical problems, the technical solution proposed by this invention is as follows:

[0007] A GCT element packaging structure includes a GCT chip, wherein the anode of the GCT chip is connected to an anode molybdenum sheet, the anode molybdenum sheet is connected to an anode copper block, an anode skirt is led out from the anode copper block, the cathode of the GCT chip is connected to a cathode molybdenum sheet, the cathode molybdenum sheet is connected to a cathode copper base, a cathode skirt is led out from the cathode copper base, the gate of the GCT chip is connected to a gate lead-out ring, the gate lead-out ring is connected to a gate lead-out flange, the gate lead-out flange includes a gate skirt, the gate skirt is provided with a concave pleated structure, the concave pleated structure is oriented towards the cathode skirt, an insulating ceramic ring is provided between the anode skirt and the cathode skirt, and the gate lead-out flange divides the insulating ceramic ring into upper and lower parts.

[0008] According to the GCT element packaging structure of the present invention, a concave pleated structure is designed on the gate skirt, with the concave pleated structure pointing towards the cathode, to reduce the magnetic flux of the gate and cathode circuits in the packaging structure, thereby reducing parasitic inductance. Simultaneously, it avoids fatigue failure caused by thermal expansion and contraction of the cathode and gate skirts due to current-driven heat generation. Secondly, the gate lead-out flange leads the gate along the lower part of the insulating ceramic ring, further reducing the height of the lower insulating ceramic ring and the area of ​​the gate and cathode circuits, thus effectively reducing parasitic inductance. Therefore, the GCT element of the present invention, through innovation in the gate skirt structure and the combined use of edge gate structure design, reduces parasitic inductance without introducing new materials or processes, and is not limited by the design thickness of the lower part of the insulating ceramic ring, thereby improving the manufacturability of the packaged component.

[0009] The above technical solution can be further improved as described below.

[0010] According to the GCT element packaging structure of the present invention, in a preferred embodiment, the gate lead-out flange further includes a lead-out gate and a gate spoke, the gate spoke being connected to the gate lead-out ring, wherein the lead-out gate is connected to the gate skirt, and a concave pleated structure is provided between the lead-out gate and the gate spoke, the direction of the concave pleated structure pointing towards the cathode skirt.

[0011] Furthermore, a concave pleated structure is designed between the gate electrode and the gate spokes, with the concave pleated structure pointing towards the cathode, in order to reduce the parasitic inductance of the gate-cathode circuit in the package structure, and at the same time to avoid the failure of the cathode skirt due to thermal expansion and contraction caused by current-carrying heat.

[0012] Specifically, in a preferred embodiment, the lead-out electrode has an n-shaped structure and the cathode skirt has a ring-shaped structure, so that the lead-out electrode and the cathode skirt cover the lower part of the insulating ceramic ring.

[0013] Specifically, the cathode skirt structure and the gate lead structure work together to cover the lower ceramic ring, reducing the gate cathode circuit and further reducing the parasitic inductance of the gate cathode circuit in the package structure.

[0014] Specifically, in another preferred embodiment, the lead-out electrode has an L-shaped structure and the cathode skirt has a Z-shaped structure, so that the lead-out electrode and the cathode skirt cover the lower part of the insulating ceramic ring.

[0015] Specifically, the cathode skirt structure and the gate lead structure work together to cover the lower ceramic ring, reducing the gate cathode circuit and further reducing the parasitic inductance of the gate cathode circuit in the package structure.

[0016] Furthermore, in a preferred embodiment, an L-shaped groove is provided along the circumferential direction on the side of the cathode copper base that is connected to the gate lead-out flange. A gate spoke and an insulating sleeve are provided in the L-shaped groove. The insulating sleeve is fitted onto the gate spoke, thereby isolating the gate spoke from the cathode copper block.

[0017] Specifically, an L-shaped groove is designed on the cathode copper base, and the gate and cathode are isolated by a thin insulating sleeve, reducing the gate and cathode circuit area, thereby further reducing the parasitic inductance of the gate-cathode circuit of the package structure. At the same time, the gate insulating base, gate elastic support component, and gasket are assembled from bottom to top on the gate spokes without interference.

[0018] Specifically, in a preferred embodiment, a gate insulating seat is embedded between the gate lead-out ring and the side of the cathode copper seat and the cathode molybdenum sheet. A U-shaped notch is provided at the top of the gate insulating seat near the gate lead-out ring. The gate spokes are L-shaped long strips. The ends of the gate spokes are bent along the side wall of the U-shaped notch to form a U-shaped structure. An elastic support component is provided inside the gate insulating seat. Gaskets are provided at both ends of the elastic support component to achieve insulation isolation between the gate lead-out ring, the elastic support component, the gaskets and the cathode copper seat and the cathode molybdenum sheet.

[0019] After the gate spokes of the above structure are isolated by being built into the groove, they are fixed in the cathode copper block by an insulating sleeve. The gate insulating seat can provide good support for the gate lead ring and can also arrange elastic support components such as disc springs and gate components in a good way. This facilitates installation and assembly in the limited space of the gate, improves production efficiency, and the insulating seat is used to insulate and isolate the gate and cathode, which helps to reduce the area of ​​the gate and cathode circuit, thereby reducing parasitic inductance.

[0020] Specifically, in a preferred embodiment, the gate insulating seat is an annular structure with an L-shaped cross-section, and a stepped structure is provided on the upper end of the gate insulating seat near the cathode molybdenum sheet.

[0021] The insulating base structure described above is simple and can effectively limit the cathode molybdenum sheet. It also facilitates the installation of gate lead-out spokes and gate lead-out rings, thereby ultimately enabling the chip gate to be led out.

[0022] Specifically, in a preferred embodiment, the gate lead-out ring has an L-shaped cross-section, and the side of the gate lead-out ring closest to the cathode molybdenum sheet is provided with a chamfered structure.

[0023] Specifically, the sidewall of the gate lead-out ring near the cathode is chamfered to increase the discharge distance between the gate and the cathode.

[0024] Furthermore, in a preferred embodiment, a convex pleated structure is provided on the cathode skirt, with the convex pleated structure facing the gate skirt.

[0025] Specifically, a convex pleated structure is designed on both sides of the insulating ceramic ring on the cathode skirt, with the convex pleated structure pointing towards the gate, in order to reduce the parasitic inductance of the gate cathode circuit of the package structure, and at the same time to avoid the failure of the cathode skirt due to thermal expansion and contraction caused by the heat generated during current flow.

[0026] Specifically, in a preferred embodiment, the GCT element packaging structure of the present invention includes a GCT element tube cap and a GCT element tube seat, and the anode skirt includes a first anode skirt and a second anode skirt. The GCT element tube seat includes a cathode copper seat, a cathode skirt, a gate lead-out flange, an insulating ceramic ring, and a first anode skirt. The GCT element tube cap includes an anode copper block and a second anode skirt. The first anode skirt and the second anode skirt are pressure welded to form a sealing edge.

[0027] Specifically, in the GCT element packaging structure of the present invention, the gate skirt and the cathode skirt can be integrally molded, which improves the sealing performance of the casing and achieves the manufacturability of each packaging component without the introduction of new materials or new processes.

[0028] Compared with the prior art, the advantages of the present invention are: while reducing parasitic inductance, it does not require the introduction of new materials or processes, and is not limited by the design thickness of the lower part of the insulating ceramic ring, thereby improving the manufacturability of the packaged component. Attached Figure Description

[0029] The invention will now be described in more detail with reference to embodiments and the accompanying drawings.

[0030] Figure 1 The schematic diagram illustrates a partial structure of the GCT element packaging structure according to an embodiment of the present invention;

[0031] Figure 2 The schematic diagram shows the main view structure of the cathode copper base in an embodiment of the present invention;

[0032] Figure 3 Schematic representation Figure 2 Sectional view in direction A;

[0033] Figure 4 The schematic diagram shows the main view structure of the gate lead-out flange in an embodiment of the present invention;

[0034] Figure 5 The schematic diagram shows the front view structure of the gate insulator in an embodiment of the present invention;

[0035] Figure 6 Schematic representation Figure 5 Sectional view in direction B;

[0036] Figure 7The illustration shows another partial structure of the GCT element package structure according to an embodiment of the present invention.

[0037] In the accompanying drawings, the same parts use the same reference numerals. The drawings are not drawn to scale. Detailed Implementation

[0038] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments, but this does not limit the scope of protection of the present invention.

[0039] Figure 1 The diagram schematically shows a partial structure of the GCT element packaging structure 100 of Embodiment 1 of the present invention. Figure 2 The schematic diagram shows the main view structure of the cathode copper base 6 in Embodiment 1 of the present invention. Figure 3 Schematic representation Figure 2 Sectional view of A direction. Figure 4 The schematic diagram shows the main view structure of the gate lead-out flange 9 in Embodiment 1 of the present invention. Figure 5 The schematic diagram shows the front view structure of the gate insulator 13 in Embodiment 1 of the present invention. Figure 6 Schematic representation Figure 5 Sectional view of section B. Figure 7 The diagram schematically shows a partial structure of the GCT element packaging structure 100' of Embodiment 2 of the present invention.

[0040] Example 1

[0041] like Figure 1 and Figure 4 As shown, the GCT element packaging structure 100 of this embodiment includes a GCT chip 1, wherein the anode of the GCT chip 1 is connected to an anode molybdenum sheet 2, the anode molybdenum sheet 2 is connected to an anode copper block 3, an anode skirt 4 is led out from the anode copper block 3, the cathode of the GCT chip 1 is connected to a cathode molybdenum sheet 5, the cathode molybdenum sheet 5 is connected to a cathode copper base 6, a cathode skirt 7 is led out from the cathode copper base 6, the gate of the GCT chip 1 is connected to a gate lead-out ring 8, the gate lead-out ring 8 is connected to a gate lead-out flange 9, the gate lead-out flange 9 includes a gate skirt 91, a set of concave pleated structures 92 is provided on the gate skirt 91, the concave pleated structures 92 are oriented towards the cathode skirt 7, an insulating ceramic ring 10 is provided between the anode skirt 4 and the cathode skirt 7, and the gate lead-out flange 9 divides the insulating ceramic ring 10 into upper and lower parts 101 and 102.

[0042] According to the GCT element packaging structure of the present invention, a concave pleated structure is designed on the gate skirt, with the concave pleated structure pointing towards the cathode, to reduce the magnetic flux of the gate and cathode circuits in the packaging structure, thereby reducing parasitic inductance. Simultaneously, it avoids fatigue failure caused by thermal expansion and contraction of the cathode and gate skirts due to current-driven heat generation. Secondly, the gate lead-out flange leads the gate along the lower part of the insulating ceramic ring, further reducing the height of the lower insulating ceramic ring and the area of ​​the gate and cathode circuits, thus effectively reducing parasitic inductance. Therefore, the GCT element of the present invention, through innovation in the gate skirt structure and the combined use of edge gate structure design, reduces parasitic inductance without introducing new materials or processes, and is not limited by the design thickness of the lower part of the insulating ceramic ring, thereby improving the manufacturability of the packaged component.

[0043] Specifically, in this embodiment, the cathode and gate of the GCT chip 1 are located on the same side, while the anode of the GCT chip 1 is located on the other side. The anode molybdenum sheet 2 is connected to the anode of the GCT chip 1, and the anode of the element is led out through the anode copper block 3. The cathode molybdenum sheet 5 is connected to the chip cathode of the GCT chip 1, and the anode of the element is led out through the cathode copper seat 6. The gate lead-out ring 8 is installed between the gate of the GCT chip and the lead-out flange 9 to lead out the chip gate. The gate skirt 91 and the cathode skirt 7 represent the gate and cathode of the GCT element, respectively, and are directly and firmly connected to the corresponding electrodes on the PCB board of the GCT gate drive unit to form a low-inductance connection.

[0044] like Figure 1 and Figure 4 As shown, in a preferred embodiment of the GCT element packaging structure according to the present invention, the gate lead-out flange 9 further includes a lead-out gate 93 and a gate spoke 94 connected to the gate lead-out ring 8. The lead-out gate 93 is connected to the gate skirt 91, and a set of concave pleated structures 92 is provided between the lead-out gate 93 and the gate spoke 94, with the direction of the concave pleated structures 92 pointing towards the cathode skirt 7. Further, the concave pleated structures are designed between the lead-out gate and the gate spokes, and the direction of the concave pleated structures points towards the cathode to reduce the parasitic inductance of the gate-cathode circuit of the packaging structure, and to avoid the failure of the cathode skirt due to thermal expansion and contraction caused by current-carrying heat.

[0045] like Figure 1 As shown, specifically in this embodiment, the gate electrode 93 has an n-shaped structure, and the cathode skirt 7 has an elongated structure, so that the gate electrode 93 and the cathode skirt 7 cover the lower portion 102 of the insulating ceramic ring 10. Specifically, the cathode skirt structure and the gate electrode lead-out structure cooperate to cover the lower ceramic ring, reducing the gate cathode circuit, thereby further reducing the parasitic inductance of the gate cathode circuit in the package structure.

[0046] like Figures 1 to 3As shown, further, in this embodiment, an L-shaped groove 61 is provided along the circumferential direction on the side of the cathode copper base 6 that connects to the gate lead-out flange 9. An insulating sleeve 11 and gate spokes 94 are sequentially embedded in the groove 61 from the inside out. Specifically, the L-shaped groove on the cathode copper base isolates the gate cathode through a thin insulating sleeve, reducing the gate and cathode circuit area, thereby further reducing the parasitic inductance of the gate cathode circuit in the encapsulation structure. Preferably, the number of gate spokes 94 includes 8 to 24 groups, with the insulating sleeve 11 passing through the gate spokes 94. Correspondingly, the groove 61 includes 8 to 24 groups.

[0047] Specifically, in a preferred embodiment, a gate insulating seat 14 is embedded between the gate lead-out ring 8 and the side of the cathode copper seat 6 and the cathode molybdenum sheet 5. A U-shaped notch 141 is provided at the top end of the gate insulating seat 14 near the gate lead-out ring 8. The gate spoke 94 is an L-shaped long strip structure. The end of the gate spoke 94 is bent along the side wall of the U-shaped notch 141 to form a U-shaped structure. A disc spring 12 is provided inside the gate insulating seat 14. Washers 13 are provided at both ends of the disc spring 12 to achieve insulation isolation between the gate lead-out ring, the elastic support component, the washers and the cathode copper seat and the cathode molybdenum sheet.

[0048] After the gate spokes of the above structure are built into the L-shaped groove 61, the cathode copper block can effectively support the gate insulating seat, facilitating the arrangement of elastic support components such as disc springs and gaskets in the gate insulating seat. After bending the end of the gate spoke 94 along the inner side of the U-shaped notch 141 at the top of the gate insulating seat 14 to form a U-shaped structure, the gate lead-out ring is then fitted on. This facilitates the bottom-up assembly of the components in the gate assembly within the limited space of the gate, improving production efficiency. The gate insulating seat serves as insulation and isolation between the gate and the cathode, reducing the circuit area between the gate and the cathode. Preferably, the gate assembly includes one set of gate insulating seats 14, two sets of disc springs 12, two sets of gaskets 13, and a gate lead-out ring 8.

[0049] like Figure 1 and Figure 5 , Figure 6 As shown, specifically in this embodiment, the gate insulating base 14 is a strip structure, and a stepped structure 142 is provided on the upper end of the gate insulating base 14 near the cathode molybdenum sheet 5. The insulating base structure described above is simple and can effectively limit the cathode molybdenum sheet, install and connect the end of the gate spokes, thereby ultimately realizing the lead-out of the chip gate.

[0050] like Figure 1 As shown, specifically in this embodiment, the gate lead-out ring 8 has an L-shaped cross-section, and the side of the gate lead-out ring 8 near the cathode molybdenum sheet 5 is provided with a chamfered structure. Specifically, the sidewall of the gate lead-out ring near the cathode is chamfered to increase the discharge distance between the gate and the cathode.

[0051] like Figure 1 As shown, further, in this embodiment, a convex pleated structure 71 is provided on the cathode skirt 7, and the convex pleated structure 71 is oriented towards the gate skirt. Specifically, one set of convex pleated structures is designed on each side of the insulating ceramic ring on the cathode skirt, and the convex pleated structures are oriented towards the gate, so as to reduce the gate-cathode circuit area of ​​the package structure, thereby reducing the parasitic inductance between the gate and the cathode, and at the same time, it can avoid fatigue failure caused by thermal expansion and contraction due to current flow and heat generation on the cathode skirt.

[0052] Specifically, in this embodiment, the GCT element packaging structure 100 includes a GCT element tube cap and a GCT element tube seat. The anode skirt 4 includes a first anode skirt 41 and a second anode skirt 42. The GCT element tube seat includes a cathode copper seat 6, a cathode skirt 7, a gate lead-out flange 9, an insulating ceramic ring 10, and a first anode skirt 41. The GCT element tube cap includes an anode copper block 3 and a second anode skirt 42. The first anode skirt 41 and the second anode skirt 42 are welded together to form a sealing edge. Specifically, in the GCT element packaging structure of the present invention, the gate skirt and the cathode skirt can be integrally molded, improving the sealing performance of the tube shell. Without the introduction of new materials or new processes, the manufacturability of each packaging component is improved.

[0053] Example 2

[0054] like Figure 7 As shown, specifically, the difference between the GCT element package structure 100' of this embodiment and the above-described embodiment 1 is that the lead-out gate 93 has an L-shaped structure and the cathode skirt 7 has a Z-shaped structure, so that the lead-out gate 93 and the cathode skirt 7 cover the lower portion 102 of the insulating ceramic ring 10. Specifically, the cathode skirt structure and the gate lead-out structure cooperate to cover the lower ceramic ring, reducing the gate-cathode circuit, thereby further reducing the parasitic inductance of the gate-cathode circuit of the package structure.

[0055] As can be seen from the above embodiments, the GCT component packaging structure of the present invention reduces parasitic inductance without the need to introduce new materials or processes, and is not limited by the design thickness of the lower part of the insulating ceramic ring, thereby improving the manufacturability of the packaged component.

[0056] Although the invention has been described with reference to preferred embodiments, various modifications can be made and components can be replaced with equivalents without departing from the scope of the invention. In particular, the technical features mentioned in the various embodiments can be combined in any manner as long as there is no structural conflict. The invention is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A GCT component packaging structure, characterized in that, Including the GCT chip; among which, The anode of the GCT chip is connected to an anode molybdenum sheet, the anode molybdenum sheet is connected to an anode copper block, and an anode skirt is led out from the anode copper block; The cathode of the GCT chip is connected to a cathode molybdenum sheet, the cathode molybdenum sheet is connected to a cathode copper base, and a cathode skirt is led out from the cathode copper base; The gate of the GCT chip is connected to a gate lead-out ring, and the gate lead-out ring is connected to a gate lead-out flange. The gate lead-out flange includes a gate skirt, and the gate skirt is provided with a concave pleated structure, the concave pleated structure being oriented towards the cathode skirt. An insulating ceramic ring is provided between the anode skirt and the cathode skirt, and the gate lead-out flange divides the insulating ceramic ring into upper and lower parts. The gate lead-out flange further includes a lead-out gate and gate spokes; the gate spokes are connected to the gate lead-out ring, wherein the lead-out gate is connected to the gate skirt, and a concave pleated structure is provided between the lead-out gate and the gate spokes, the direction of the concave pleated structure pointing towards the cathode skirt, and a set of convex pleated structures are designed on each side of the insulating ceramic ring on the cathode skirt, the direction of the convex pleated structures facing the gate skirt, and the convex pleated structures are arranged opposite to the concave pleated structures; The lead-out electrode has an n-shaped structure and the cathode skirt has an annular structure, or the lead-out electrode has an L-shaped structure and the cathode skirt has a Z-shaped structure, so that the lead-out electrode and the cathode skirt cover the lower part of the insulating ceramic ring.

2. The GCT element packaging structure according to claim 1, characterized in that, An L-shaped groove is provided along the circumferential direction on the side of the cathode copper base that is connected to the gate lead-out flange. A gate spoke and an insulating sleeve are provided in the L-shaped groove, and the insulating sleeve is sleeved on the gate spoke.

3. The GCT element packaging structure according to claim 2, characterized in that, A gate insulating seat is embedded between the gate lead-out ring and the side of the cathode copper seat and the cathode molybdenum sheet; A U-shaped notch is provided at the top of the gate electrode insulating seat near the gate electrode lead-out ring. The gate electrode spokes are L-shaped long strips. The ends of the gate electrode spokes are bent along the sidewall of the U-shaped notch to form a U-shaped structure. An elastic support component is provided inside the gate electrode insulating seat. Gaskets are provided at both ends of the elastic support component.

4. The GCT element packaging structure according to claim 3, characterized in that, The gate insulating base has a ring structure and an L-shaped cross-section. A stepped structure is provided on the upper end of the gate insulating base near the cathode molybdenum sheet.

5. The GCT element packaging structure according to claim 1, characterized in that, The gate lead-out ring has an L-shaped cross-section, and the side of the gate lead-out ring closest to the cathode molybdenum sheet has a chamfered structure.

6. The GCT element packaging structure according to claim 1, characterized in that, The device includes a GCT element tube cap and a GCT element tube seat, wherein the anode skirt includes a first anode skirt and a second anode skirt; wherein, The GCT element tube socket includes the cathode copper base, the cathode skirt, the gate lead flange, the insulating ceramic ring, and the first anode skirt; the GCT element tube cover includes the anode copper block and the second anode skirt; The first anode skirt edge and the second anode skirt edge are press-welded to form a sealing edge.

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