A semiconductor device and a method of fabricating the same

By setting ohmic contact electrode bonding disks in the active region of gallium nitride-based semiconductor devices and using two-dimensional electron gas to shield parasitic capacitance, the problems of increased process complexity and cost in the prior art are solved, and semiconductor devices with high capacitance requirements and miniaturized designs are realized.

CN115863420BActive Publication Date: 2026-07-03DYNAX SEMICON
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
DYNAX SEMICON
Filing Date
2021-09-24
Publication Date
2026-07-03

AI Technical Summary

Technical Problem

Existing gallium nitride-based semiconductor devices face challenges in reducing parasitic capacitance due to increased process complexity and cost, particularly when reducing field plate area and using low dielectric constant dielectric materials, which affects device withstand voltage and production costs.

Method used

By setting ohmic contact electrode bonding disks in the active region and using the two-dimensional electron gas in the heterojunction structure to shield the parasitic capacitance between the ohmic contact electrode bonding disks and the substrate, and using electrode connection lines to realize the electrical connection between the electrode structure and the electrode bonding disks, the parasitic capacitance between the ohmic contact electrode bonding disks and the substrate is reduced.

Benefits of technology

It effectively reduces the parasitic capacitance between the ohmic contact electrode bonding pad and the substrate, meets the requirements for high input and output capacitance, and at the same time reduces the overall area of ​​the semiconductor device, improves integration and reduces chip cost.

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Abstract

The embodiment of the application discloses a semiconductor device and a preparation method thereof, the semiconductor device comprising an active region; further comprising: a substrate; an epitaxial structure; an electrode structure, the electrode structure comprising a plurality of ohmic contact electrodes; a first dielectric layer; an electrode connecting line, located on the side of the first dielectric layer away from the substrate; the electrode connecting line comprising an ohmic contact electrode connecting line, the ohmic contact electrode connecting line being electrically connected with the ohmic contact electrode; a second dielectric layer; an electrode bonding pad, located on the side of the second dielectric layer away from the substrate; the electrode bonding pad comprising an ohmic contact electrode bonding pad, the ohmic contact electrode bonding pad being electrically connected with the ohmic contact electrode connecting line, and at least part of the ohmic contact electrode bonding pad being located in the active region. The semiconductor device provided by the application can reduce the parasitic capacitance generated between the ohmic contact electrode bonding pad and the substrate, and meet the high requirements on the input and output capacitance of the semiconductor device.
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