能高精度测温的SGT功率器件
By integrating a temperature sensing unit inside a power semiconductor chip and utilizing an SGT structure of alternating P-type and N-type conductive polysilicon, the problems of inaccurate internal temperature monitoring and area occupation are solved, achieving high-precision temperature measurement without affecting the device's operating status.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- JIANGSU CAS IGBT TECHNOLOGY CO LTD
- Filing Date
- 2022-12-21
- Publication Date
- 2026-07-17
AI Technical Summary
In existing technologies, the internal temperature monitoring of power semiconductor chips is not accurate enough, and traditional designs occupy the effective area of the chip, affecting power density.
A temperature sensing unit, including a temperature sensing trench and a temperature sensing unit body, is integrated inside a power semiconductor chip. A high-precision temperature measurement is achieved by utilizing an SGT structure with alternating distributions of temperature-sensing P-type and N-type conductive polycrystalline silicon, while maintaining compatibility with existing processes.
It enables high-precision measurement of the internal temperature of power semiconductor chips, reduces area footprint, and ensures the operating status and safety of the device.
Smart Images
Figure CN115863437B_ABST