Laser device and method of using the same

Abstract

The present disclosure relates to a laser device and methods of using the same. Some embodiments described herein provide a laser device. The laser device includes a first portion of the laser device, located at a proximal end of the laser device, the first portion comprising one or more optical devices, wherein the first portion is configured to emit a first electromagnetic wave having a first wavelength. The laser device includes a second portion of the laser device, located at a distal end of the laser device, the second portion comprising an optical crystal configured to receive the first electromagnetic wave and emit a second electromagnetic wave having a second wavelength based on the receiving of the first electromagnetic wave, wherein the optical crystal comprises a thin film coating disposed at an end of the optical crystal, the thin film coating configured to support emission of the second electromagnetic wave from the optical crystal and support internal reflection of the first electromagnetic wave within the optical crystal.

Description

Technical Field

[0001] This disclosure generally relates to laser devices and methods of using them. Background Technology

[0002] A laser device (optical amplification via stimulated emission of a radiating device) is a device that uses optical amplification to emit light based on received input (e.g., a stimulus). Laser devices can be configured to emit coherent electromagnetic waves (e.g., light waves) that can be focused into a beam (e.g., a transmission path). Laser devices can be used to emit electromagnetic waves for applications such as laser cutting, medical applications, measuring tools, annealing operations, and / or photolithography (e.g., photolithography). Summary of the Invention

[0003] According to one aspect of this disclosure, a laser device is provided, comprising: a first portion of the laser device located at a proximal end of the laser device, the first portion including one or more optical elements, wherein the first portion is configured to emit a first electromagnetic wave having a first wavelength; and a second portion of the laser device located at a distal end of the laser device, the second portion including an optical crystal configured to receive the first electromagnetic wave and, based on the reception of the first electromagnetic wave, emit a second electromagnetic wave having a second wavelength, wherein the optical crystal includes a thin film coating disposed at an end of the optical crystal, the thin film coating being configured to: support the emission of the second electromagnetic wave from the optical crystal and support internal reflection of the first electromagnetic wave within the optical crystal.

[0004] According to another aspect of this disclosure, a method of using a laser device is provided, comprising: receiving an input signal into a first portion of the laser device, the input signal stimulating the emission of a first electromagnetic wave having a first wavelength; receiving the first electromagnetic wave via an optical crystal in a second portion of the laser device, wherein the optical crystal includes a thin film coating disposed at an end of the optical crystal, the thin film coating being configured to: emit a second electromagnetic wave from the optical crystal based on the reception of the first electromagnetic wave, and cause the first electromagnetic wave to undergo internal reflection within the optical crystal; and emitting the second electromagnetic wave via the optical crystal.

[0005] According to another aspect of this disclosure, a method of using a laser device is provided, comprising: emitting electromagnetic waves toward an object to be inspected via the laser device, the laser device comprising: a first portion of the laser device configured to emit a first electromagnetic wave having a first wavelength; and a second portion of the laser device including an optical crystal configured to receive the first electromagnetic wave and, based on the reception of the first electromagnetic wave, emit a second electromagnetic wave having a second wavelength, wherein the optical crystal includes a thin film coating disposed at an end of the optical crystal, the thin film coating being configured to support the emission of the second electromagnetic wave from the optical crystal and to support internal reflection of the first electromagnetic wave within the optical crystal; and receiving a portion of the electromagnetic wave after the electromagnetic wave has been reflected or refracted from one or more surfaces of the object. Attached Figure Description

[0006] The various aspects of this disclosure can be best understood by reading in conjunction with the accompanying drawings through the following detailed description. It should be noted that, according to industry standard practice, the various features are not drawn to scale. In fact, for clarity of discussion, the dimensions of the various features may be arbitrarily increased or decreased.

[0007] Figures 1-3 This is a schematic diagram of an example of the laser device described in this article.

[0008] Figure 4 This is a schematic diagram of an example environment in which the systems and / or methods described herein can be implemented.

[0009] Figure 5 This is what is described in this article. Figure 1 A schematic diagram of example components of one or more devices.

[0010] Figure 6 and Figure 7 This is a flowchart of an example process related to the laser device described herein.

[0011] Figure 8 This is a schematic diagram of an example lithography system that can implement the system and / or methods described herein. Detailed Implementation

[0012] The following disclosure provides numerous different embodiments or examples for implementing various features of the provided subject matter. Specific examples of components and arrangements are described below to simplify this disclosure. Of course, these are merely examples and are not intended to be limiting. For example, the following description of forming a first feature on or over a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features such that the first and second features do not need to be in direct contact. Furthermore, reference numerals and / or letters may be repeated in various examples. Such repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0013] Furthermore, spatially related terms (e.g., "below," "under," "down," "above," "up," etc.) may be used herein to readily describe the relationship of one element or feature shown in the figure relative to another element(s) or feature(s). These spatially related terms are intended to cover different orientations of the apparatus in use or operation other than those shown in the figure. The apparatus may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially related descriptors used herein may be interpreted accordingly.

[0014] In some cases, the laser device may be configured with an optical crystal (nonlinear optical crystal) disposed between the optical components of the laser device. The optical crystal may be configured to receive a first electromagnetic wave having a first wavelength and emit a second electromagnetic wave having a second wavelength. The optical crystal may be disposed between a first mirror device and a second mirror device, wherein the first mirror device has a first thin-film coating on its surface near the optical crystal, and the second mirror device has a second thin-film coating on its surface near the optical crystal. The first thin-film coating may be configured to reflect the second electromagnetic wave (e.g., reflect a rearwardly emitted second electromagnetic wave in a forward direction). The second thin-film coating may be configured to allow the forward-emitted second electromagnetic wave to pass through the second mirror device and reflect the forward-emitted first electromagnetic wave back to the optical crystal, thereby providing an opportunity to stimulate the emission of an additional second electromagnetic wave.

[0015] Using a laser device with an optical crystal disposed between a first mirror device and a second mirror device can present manufacturing challenges, potentially leading to energy loss, and / or unnecessarily long lengths. For example, the placement of a first and second thin-film coating can present manufacturing challenges. The first and second thin-film coatings have low deposition error tolerances because they are configured to allow electromagnetic waves to be reflected and / or passed through based on thicknesses tuned to a first and / or second wavelength. Inaccurate thickness can cause errors in the electromagnetic waves passed through or reflected by either the first or second thin-film coating. Consequently, errors in the first or second thin-film coating can cause electromagnetic waves with unintended wavelengths to be emitted from the laser device, potentially damaging the device the laser device targets, such as the substrate of a semiconductor device. Additionally or alternatively, the first and second thin-film coatings may have low roughness tolerances, which can scatter electromagnetic waves. Furthermore, the laser device may lose energy (e.g., due to scattering and / or collisions with particles within the laser device) due to the space between the optical crystal and the first and second mirror devices. Furthermore, laser devices may have unnecessarily long chambers, which could be an inefficient use of space in facilities using the laser device (e.g., semiconductor manufacturing facilities). Consequently, the laser device may consume unnecessarily large amounts of energy to compensate for energy losses, and facilities may use resources to reduce energy losses (e.g., immersing the laser device in nitrogen to reduce particles between the optical crystal and the first and second mirror devices, etc.), and / or manufacturing resources may be unnecessarily consumed based on errors in the first or second thin-film coating.

[0016] Some embodiments described herein provide techniques and apparatus for using optical crystals as resonators in laser devices. In some embodiments, the optical crystal may have one or more thin-film coatings disposed at one or more ends of the optical crystal (e.g., along the rear-end and / or front-end of the transmission path of the laser device). In this way, the optical crystal can be configured to reflect a second electromagnetic wave propagating backward in a forward direction (e.g., via internal reflection at the rear end of the optical crystal) and to emit a second electromagnetic wave propagating forward from the front end of the optical crystal (e.g., traveling within the optical crystal). In some embodiments, the optical crystal can be configured to reflect a first electromagnetic wave propagating forward (e.g., traveling within the optical crystal) and reflect a first electromagnetic wave propagating backward (e.g., traveling within the optical crystal). In this way, mirror devices with thin-film coatings around the optical crystal may be unnecessary. This allows the manufacturing process of the laser device to avoid unnecessary cost and resource consumption for providing mirror devices with thin-film coatings. Furthermore, the first and second electromagnetic waves can reduce the propagation distance between devices (e.g., between an optical crystal and a mirror device with a thin-film coating), which can reduce energy loss due to particle collisions (e.g., a 10%-20% reduction at deep ultraviolet frequencies, or a 5%-10% reduction at visible light frequencies, etc.), and / or reduce scattering caused by the roughness of the thin-film coating. In this way, the laser device can, for example, improve energy efficiency and / or reduce manufacturing costs and / or time. For example, based on the reduced need for depositing a thin-film coating, the laser device can reduce downtime (e.g., a 2-3% reduction). Additionally or alternatively, the laser device can have a reduced chamber length (e.g., a 20% reduction), which can save space within the tooling that includes the laser device.

[0017] Figure 1 This is a schematic diagram of an example of the laser device 100 described herein. The laser device 100 may include additional components (e.g., optical components), a housing for arranging components within the laser device 100, and / or the laser device 100 may be connected to one or more additional devices, such as controllers, power supplies, time modulators and spatial modulators (e.g., for controlling the laser output sequence and beam shape), optical filters and gratings (e.g., for narrowing the laser spectrum), and / or input devices, and other examples. In some embodiments, the housing may include a metal housing and / or a heat sink to reduce the thermal load on the laser device 100. In some embodiments, the laser device 100 may be configured with temperature controls to maintain a threshold temperature for one or more optical crystals of the laser device 100. In some embodiments, the laser device 100 may be configured for, for example, metrology, extreme ultraviolet lithography, immersion scanning, laser annealing, and / or light sources.

[0018] like Figure 1As shown, the laser device 100 may include a mirror device 102 disposed at the rearward end of the cavity of the laser device 100. The mirror device 102 may be configured to reflect electromagnetic waves (e.g., pump electromagnetic waves) propagating in a rearward direction from the gain device 104 and / or from the optical crystal 106 (e.g., a nonlinear optical crystal). The mirror device 102 may be configured to reflect electromagnetic waves having wavelengths associated with the gain device 104 and / or the optical crystal 106.

[0019] Gain device 104 may be configured with population inversion, wherein the electronic and / or molecular energy levels of gain device 104 are raised, such that the drop in energy levels generates gain device electromagnetic waves within laser device 100. Gain device 104 may comprise crystal-based materials, such as rare earth ions, transition metal ions, yttrium aluminum garnet, yttrium orthovanadate, sapphire, and / or cesium cadmium bromide. Gain device 104 may comprise, for example, glass materials (e.g., silicate or phosphate glass doped with laser-active ions), gaseous materials (e.g., helium and neon, nitrogen, argon, carbon monoxide, carbon dioxide, or metal vapor, etc.), semiconductor materials (e.g., gallium arsenide, indium gallium arsenide, and / or gallium nitride, etc.), and / or liquid materials (e.g., dye solutions, etc.). Gain device may be disposed between mirror device 102 and optical crystal 106.

[0020] Optical crystal 106 is configured to receive electromagnetic waves having a wavelength (e.g., from gain device 104) and emit electromagnetic waves having other wavelengths (e.g., the first wavelength of a laser device). Optical crystal 106 may include, for example, barium borate, lithium iodate, potassium niobate, monopotassium phosphate, lithium triborate, barium β-borate, gallium selenide, potassium dihydrogen phosphate, lithium niobate, ammonium dihydrogen phosphate, and / or potassium titanium phosphate.

[0021] The laser device 100 may include a modulator device 108 configured to modulate electromagnetic waves emitted from an optical crystal 106 before transmitting them to a mirror device 110. Mirror devices 110 and 102 may be linearly spaced from the optical crystal 106 such that electromagnetic waves emitted from the optical crystal 106 can propagate through a vacuum or other gas before interacting with mirror devices 110 or 102. The modulator device 108 may be configured to block transmission of electromagnetic waves to the mirror device 110 during a timing interval, such that the modulator device 108 transmits electromagnetic waves to the mirror device 110 in pulses. For example, the modulator device 108 may allow transmission of electromagnetic waves during a first portion of the time and may block transmission of electromagnetic waves during a second portion of the time alternating with the first portion. In some embodiments, when modulator device 108 blocks electromagnetic waves, the electromagnetic waves can be reflected between modulator device 108 and one or more of mirror device 102 or optical crystal 106, such that during a first portion of the time, an increased amount of electromagnetic waves passes through modulator device 108.

[0022] The mirror device 110 can be configured to reflect a high proportion (e.g., about 98% and / or greater than or equal to 90%) of electromagnetic waves outside the configured wavelength range (e.g., the wavelength associated with the electromagnetic waves emitted by the optical crystal 106), and allow a high proportion (e.g., about 98% and / or greater than or equal to 90%) of electromagnetic waves within the configured wavelength range to pass through. For example, the mirror device 110 can be configured with a thickness and / or material associated with the configured wavelength range. In this way, the mirror device 110 can reduce the amount of electromagnetic waves emitted from the first portion 112 of the laser device 100 that are not configured to stimulate electromagnetic waves with a desired wavelength.

[0023] In some embodiments, the first portion 112 of the laser device 100 may include a plurality of optical crystals that receive electromagnetic waves at an incoming frequency and generate electromagnetic waves at an outgoing frequency. For example, a first optical crystal may receive electromagnetic waves at a first frequency and generate electromagnetic waves at a second frequency. A second optical crystal may receive electromagnetic waves at a second frequency and generate electromagnetic waves at a third frequency. A third optical crystal may receive electromagnetic waves at a third frequency and generate electromagnetic waves at a fourth frequency. In this way, the first portion 112 of the laser device 100 may have any number of optical crystals to convert incoming electromagnetic waves at a first frequency into outgoing electromagnetic waves at a second frequency.

[0024] Along the transmission path, after the first portion 112 of the laser device 100, the laser device 100 may include an optical crystal 114 configured to receive electromagnetic waves emitted by the optical crystal 106 and to emit electromagnetic waves of other wavelengths along the transmission path away from the first portion 112. In some embodiments, the electromagnetic waves emitted by the optical crystal 114 may be harmonics of the electromagnetic waves received from the optical crystal 106.

[0025] Optical crystal 114 may include a thin film coating 116 located at an end (e.g., rearward) of optical crystal 114 near the first portion 112. Thin film coating 116 may be configured to receive electromagnetic waves emitted from optical crystal 106 and reflect electromagnetic waves generated by optical crystal 114 (e.g., based on receiving electromagnetic waves emitted from optical crystal 106) (e.g., with 90% reflection). For example, thin film coating 116 may be configured with a thickness and / or material to associate thin film coating 116 with electromagnetic waves emitted from optical crystal 106, thereby allowing electromagnetic waves from optical crystal 106 to pass through thin film coating 116.

[0026] In some embodiments, the thin film coating 116 may be further configured to internally reflect electromagnetic waves emitted from the optical crystal 106 (first electromagnetic wave) and / or internally reflect electromagnetic waves generated by the optical crystal 114 (second electromagnetic wave) based on a first electromagnetic wave and / or a second electromagnetic wave propagating in a rearward direction within the optical crystal 114. In some embodiments, the thin film coating 116 is configured to support internal reflection of electromagnetic waves generated by the optical crystal 114 (second electromagnetic wave) and internal reflection of electromagnetic waves emitted by the optical crystal 106 based on the wavelength of the first electromagnetic wave, the wavelength of the second electromagnetic wave, the material of the thin film coating 116 (e.g., the refractive index of the material), and / or the thickness T1 of the thin film coating 116.

[0027] The optical crystal 114 may include a thin film coating 118 located at an end of the optical crystal 114 away from the first portion 112 (e.g., towards the front end). The thin film coating 118 may be configured to emit electromagnetic waves generated by the optical crystal 114 and / or may be configured to reflect electromagnetic waves emitted from the optical crystal 106.

[0028] In some embodiments, the thin film coating 118 may be further configured to emit electromagnetic waves emitted from the optical crystal 114 and / or internally reflect electromagnetic waves emitted from the optical crystal 106 based on a first electromagnetic wave and / or a second electromagnetic wave propagating in the forward direction within the optical crystal 114. In some embodiments, the thin film coating 118 is configured to support the emission of electromagnetic waves emitted from the optical crystal 114 and the internal reflection of electromagnetic waves emitted from the optical crystal 106 based on the wavelength of the first electromagnetic wave, the wavelength of the second electromagnetic wave, the material of the thin film coating 118 (e.g., refractive index), and / or the thickness T2 of the thin film coating 118.

[0029] In some embodiments, the thin film coating 116 may have a material and / or thickness such as a metal (e.g., aluminum, silver, gold, etc.) or a dielectric (e.g., SiO2, MgF2, YF3, LaF3, Al2O3, CeF3, Y2O3, HfO2, TiO2, CeF3, YF3, ZnS, ZnO, ZnSe, LaTiO3, ZrO2, etc.), which are configured to resist reflection of electromagnetic waves emitted by optical crystal 106 and to highly reflect electromagnetic waves emitted by optical crystal 114 to form a resonator. In some embodiments, the thickness of the thin film coating 116 may be less than 1 micrometer. The refractive index of the thin film coating 116 may be in the range of about 1.2 to about 2.7. The refractive index of the optical crystal 114 may be in the range of about 1.4 to about 1.7.

[0030] Multi-film coatings (e.g., thin film coating 116 and thin film coating 118) can achieve anti-reflection or high reflectivity based on interference. For example, optical coatings 116 and 118 can be configured to produce destructive interference with electromagnetic waves emitted by optical crystal 106 and constructive interference with electromagnetic waves emitted by optical crystal 114. Therefore, thin film coatings 116 and 118 can be formed with thicknesses and refractive indices suitable for fine-tuning the reflection spectrum.

[0031] Optical crystal 114 having thin-film coatings 116 and 118 may be part of portion 120 of laser device 100. Portion 120 is located further along the transmission path of laser device 100 than the first portion 112. In some embodiments, the second portion 120 of laser device 100 may include multiple optical crystals that receive electromagnetic waves at an incoming frequency and generate electromagnetic waves at an outgoing frequency. For example, a first optical crystal may receive electromagnetic waves at a first frequency and generate electromagnetic waves at a second frequency. A second optical crystal may receive electromagnetic waves at a second frequency and generate electromagnetic waves at a third frequency. A third optical crystal may receive electromagnetic waves at a third frequency and generate electromagnetic waves at a fourth frequency. In this way, the second portion 120 of laser device 100 may have any number of optical crystals to convert incoming electromagnetic waves at a first frequency into outgoing waves at a second frequency.

[0032] In an example operation of the laser device 100, the optical crystal 106 may emit a first electromagnetic wave 122. The first electromagnetic wave 122 may propagate in a forward direction toward a second portion 120 of the laser device 100 (e.g., toward the optical crystal 114). In some embodiments, a portion of the first electromagnetic wave 122 may propagate in a backward direction and may be reflected by the mirror device 102, such that this portion of the first electromagnetic wave 122 may propagate in a forward direction.

[0033] Optical crystal 114 receives a first electromagnetic wave 122 via a thin film coating 116 and emits a second electromagnetic wave 124 based on the reception of the first electromagnetic wave 122. In some embodiments, the first electromagnetic wave 122 can enter optical crystal 114 and stimulate the generation of the second electromagnetic wave 124 within optical crystal 114. In some embodiments, a portion of the electromagnetic wave 122 within optical crystal 114 can propagate through optical crystal 114 and can be internally reflected by thin film coating 118, allowing this portion of the first electromagnetic wave 122 to propagate back through optical crystal 114, thereby providing an additional opportunity to stimulate the generation of the second electromagnetic wave 124. In this way, optical crystal 114 can use the stimulation from the first electromagnetic wave to generate and emit the second electromagnetic wave 124, and during stimulation, the propagation of the first electromagnetic wave 122 and the second electromagnetic wave 124 outside optical crystal 114 is reduced.

[0034] In some embodiments, the gain device 104 receives an input signal 126 to configure population inversion of the gain device 104. In some embodiments, the input signal 126 may include an electrical signal configured to induce electronic excitation within the gain device 104. Electronic excitation within the gain device 104 may cause the gain device 104 to emit electromagnetic waves that induce electronic excitation and / or stimulation within the optical crystal 106. Figure 1 The electromagnetic wave 122 is emitted as shown. In some embodiments, the modulator device 108 receives a control signal 128 to cause the modulator device 108 to form a pulse of the first electromagnetic wave 122 before providing the first electromagnetic wave 122 to the second portion 120.

[0035] Figure 2 This is a schematic diagram of an example of the laser device 200 described herein. Figure 2 The laser device 200 shown may include a laser device or may be included within a laser device. The laser device 200 may include additional elements (e.g., optical elements), a housing for arranging elements within the laser device 200, and / or the laser device 200 may be connected to one or more additional devices, such as controllers and / or input devices, and other examples. The devices and other components of the laser device 200 may have features, configurations, and / or materials corresponding to the devices or other components of the laser device 100.

[0036] like Figure 2 As shown, the laser device 200 may include a mirror device 102 disposed at the rear end of the cavity of the laser device 200. The mirror device 102 may be configured to reflect electromagnetic waves (e.g., pump electromagnetic waves) propagating in a rearward direction from the gain device 104 and / or from the optical crystal 106 (e.g., a nonlinear optical crystal). The mirror device 102 may be configured to reflect electromagnetic waves having a wavelength associated with the gain device 104 and / or the optical crystal 106.

[0037] Gain device 104 may be configured with population inversion, wherein the electronic and / or molecular energy levels of gain device 104 are raised, such that a drop in energy level generates gain device electromagnetic waves within laser device 200. Gain device 104 may comprise crystal-based materials, such as rare earth ions, transition metal ions, yttrium aluminum garnet, yttrium orthovanadate, sapphire, and / or cesium cadmium bromide. Gain device 104 may comprise, for example, glass materials (e.g., silicate or phosphate glass doped with laser-active ions), gaseous materials (e.g., helium and neon, nitrogen, argon, carbon monoxide, carbon dioxide, or metal vapor, etc.), semiconductor materials (e.g., gallium arsenide, indium gallium arsenide, and / or gallium nitride, etc.), and / or liquid materials (e.g., dye solutions, etc.). Gain device may be disposed between mirror device 102 and optical crystal 106.

[0038] Optical crystal 106 is configured to receive electromagnetic waves having a wavelength (e.g., from gain device 104) and emit electromagnetic waves having other wavelengths (e.g., the first wavelength of a laser device). Optical crystal 106 may include, for example, barium borate, lithium iodate, potassium niobate, monopotassium phosphate, lithium triborate, barium β-borate, gallium selenide, potassium dihydrogen phosphate, lithium niobate, ammonium dihydrogen phosphate, and / or potassium titanium phosphate.

[0039] The laser device 200 may include a modulator device 108 configured to modulate electromagnetic waves emitted from an optical crystal before transmitting electromagnetic waves to the mirror device 110. The modulator device 108 may be configured to block the transmission of electromagnetic waves to the mirror device 110 during a timing interval, such that the modulator device 108 transmits electromagnetic waves to the mirror device 110 in the form of pulses.

[0040] The mirror device 110 can be configured to reflect a high proportion (e.g., about 98% and / or greater than or equal to 90%) of electromagnetic waves outside the configured wavelength range (e.g., the wavelength associated with the electromagnetic waves emitted by the optical crystal 106), and allow a high proportion (e.g., about 98% and / or greater than or equal to 90%) of electromagnetic waves within the configured wavelength range to pass through. In this way, the mirror device 110 can reduce the amount of electromagnetic waves emitted from the first portion 112 of the laser device 200 that are not configured to stimulate electromagnetic waves with the desired wavelength.

[0041] Along the transmission path, after the first portion 112 of the laser device 200, the laser device 200 may include an optical crystal 114 configured to receive electromagnetic waves emitted by optical crystal 106 and to emit electromagnetic waves of other wavelengths. The optical crystal 114 may include a thin-film coating 116 located at an end of the optical crystal 114 near the first portion 112 (e.g., towards the rear). The thin-film coating 116 may be configured to receive electromagnetic waves emitted from optical crystal 106 (when received via the first portion 112) and reflect electromagnetic waves generated by optical crystal 106 (when propagating within optical crystal 114). The thin-film coating 116 may also be configured to allow electromagnetic waves generated by optical crystal 114 (e.g., based on receiving electromagnetic waves emitted from optical crystal 106) to pass through.

[0042] Optical crystal 114 may include a thin film coating 118 located at an end of optical crystal 114 remote from the first portion 112 (e.g., towards the front end). Thin film coating 118 may be configured to reflect electromagnetic waves generated by optical crystal 114 and / or emitted from optical crystal 106. In some embodiments, the manufacturing tolerances (e.g., thickness and / or roughness) of thin film coating 118 are greater than those of thin film coating 116.

[0043] In some embodiments, the thin-film coating 118 includes two or more inclined surfaces, which may (optionally) have reflective films 118a and 118b disposed thereon. These two or more inclined surfaces may form an angle symmetrical about a longitudinal axis 130 parallel to the transmission path in the direction from the first portion 112 to the second portion 120 of the laser device. In some embodiments, these two or more inclined surfaces may be tilted relative to the transmission path within the optical crystal 114, such that the first electromagnetic wave will be internally refracted. The total internal reflection angle of the nonlinear optical crystal can be in the range of about 40 degrees to about 70 degrees. Therefore, total internal reflection can be achieved at the far end of the crystal as long as the angle is greater than 70 degrees. In this way, the optical crystal 114 may not require the thin-film coating 118, and the thin-film coating 118 can be omitted.

[0044] In some embodiments, the laser device 200 further includes a beam splitter 202 disposed along the transmission path after the second electromagnetic wave is emitted via the optical crystal 114. In some embodiments, the beam splitter 202 may be configured to split the second electromagnetic wave based on reflecting a portion 124a of the second electromagnetic wave (e.g., in a direction different from the transmission path between the optical crystals 106 and 114) and allowing a portion 124b of the second electromagnetic wave to pass through.

[0045] Beam splitter 202 and optical crystal 114 having thin film coatings 116 and 118 may be part of portion 120 of laser device 200. Portion 120 is located further away from the first portion 112 along the transmission path of laser device 200.

[0046] In an example operation of the laser device 200, the optical crystal 106 may emit a first electromagnetic wave 122. The first electromagnetic wave 122 may propagate in a forward direction toward a second portion 120 of the laser device 200 (e.g., toward the optical crystal 114). In some embodiments, a portion of the first electromagnetic wave 122 may propagate in a backward direction and may be reflected by the mirror device 102, such that this portion of the first electromagnetic wave 122 may propagate in a forward direction.

[0047] Optical crystal 114 receives a first electromagnetic wave 122 that may have previously propagated through beam splitter 202 via thin film coating 116, and emits a second electromagnetic wave 124 based on the reception of the first electromagnetic wave 122. The second electromagnetic wave 124 and / or the first electromagnetic wave 122 (collectively referred to as electromagnetic waves) can be reflected from two or more inclined surfaces having reflective films 118a and 118b disposed thereon. Based on two or more inclined surfaces formed at an angle symmetrical about the longitudinal axis 130, electromagnetic waves can be reflected such that the electromagnetic waves propagate in a direction opposite to the direction in which they propagate before being reflected from the two or more inclined surfaces.

[0048] The second electromagnetic wave 124 can be emitted from the optical crystal 114 based on the selection of the thin film coating 116, and the first electromagnetic wave 122 can be internally reflected by the thin film coating 116. After being emitted by the optical crystal 114, the second electromagnetic wave 124 can be split using a beam splitter 202. A portion 124a can be reflected by the beam splitter 202 to a direction different from the transmission direction of the laser device 200.

[0049] In some embodiments, a first electromagnetic wave 122 can enter an optical crystal 114 and stimulate the generation of a second electromagnetic wave 124 within the optical crystal 114. In some embodiments, a portion of the electromagnetic wave 122 within the optical crystal 114 can propagate through the optical crystal 114, be reflected from the thin film coating 118, and then be internally reflected by the thin film coating 116, such that this portion of the first electromagnetic wave 122 propagates back through the optical crystal 114, thus providing an additional opportunity to stimulate the generation of the second electromagnetic wave 124. In this way, the optical crystal 114 can use the stimulation from the first electromagnetic wave to generate and emit the second electromagnetic wave 124, and the amount of propagation of the first electromagnetic wave 122 and the second electromagnetic wave 124 outside the optical crystal 114 is reduced during stimulation. Additionally or alternatively, the effective length of the optical crystal 114 (e.g., associated with the amount of the second electromagnetic wave to be emitted) can be greater than the actual length of the optical crystal 114. For example, the effective length can be approximately twice the actual length.

[0050] In some embodiments, the gain device 104 receives an input signal 126 to configure population inversion of the gain device 104. In some embodiments, the input signal 126 may include an electrical signal configured to induce electronic excitation within the gain device 104. Electronic excitation within the gain device 104 may cause the gain device 104 to emit electromagnetic waves that induce electronic excitation and / or stimulation within the optical crystal 106. Figure 2 The electromagnetic wave 122 shown is emitted. In some embodiments, the modulator device 108 receives a control signal 128 to cause the modulator device 108 to form a pulse of the first electromagnetic wave 122 before providing the first electromagnetic wave 122 to the second portion 120.

[0051] Figure 3 This is a schematic diagram of an example of the laser device 300 described herein. Figure 3 The laser device 300 shown may include a laser device or may be included in a laser device. The laser device 300 may include additional elements (e.g., optical elements) not shown, a housing for arranging elements within the laser device 300, and / or the laser device 300 may be connected to one or more additional devices, such as controllers and / or input devices, and other examples.

[0052] like Figure 3 As shown, the laser device 300 may include a mirror device 102 disposed at the rear end of the cavity of the laser device 300. The mirror device 102 may be configured to reflect electromagnetic waves (e.g., pump electromagnetic waves) propagating in a rearward direction from the gain device 104 and / or from the optical crystal 106 (e.g., a nonlinear optical crystal). The mirror device 102 may be configured to reflect electromagnetic waves having a wavelength associated with the gain device 104 and / or the optical crystal 106.

[0053] Gain device 104 may be configured with population inversion, wherein the electronic and / or molecular energy levels of gain device 104 are raised, such that the drop in energy levels generates gain device electromagnetic waves within laser device 300. Gain device 104 may include crystal-based materials, such as rare earth ions, transition metal ions, yttrium aluminum garnet, yttrium orthovanadate, sapphire, and / or cesium cadmium bromide. Gain device 104 may include, for example, glass materials (e.g., silicate or phosphate glass doped with laser-active ions), gaseous materials (e.g., helium and neon, nitrogen, argon, carbon monoxide, carbon dioxide, or metal vapor, etc.), semiconductor materials (e.g., gallium arsenide, indium gallium arsenide, and / or gallium nitride, etc.) and / or liquid materials (e.g., dye solutions, etc.). Gain device may be disposed between mirror device 102 and optical crystal 106.

[0054] Optical crystal 106 is configured to receive electromagnetic waves having a wavelength (e.g., from gain device 104) and emit electromagnetic waves having other wavelengths (e.g., the first wavelength of a laser device). Optical crystal 106 may include, for example, barium borate, lithium iodate, potassium niobate, monopotassium phosphate, lithium triborate, barium β-borate, gallium selenide, potassium dihydrogen phosphate, lithium niobate, ammonium dihydrogen phosphate, and / or potassium titanium phosphate.

[0055] The laser device 300 may include a modulator device 108 configured to modulate electromagnetic waves emitted from an optical crystal before transmitting electromagnetic waves to the mirror device 110. The modulator device 108 may be configured to block the transmission of electromagnetic waves to the mirror device 110 during a timing interval, such that the modulator device 108 transmits electromagnetic waves to the mirror device 110 in the form of pulses.

[0056] like Figure 3 As shown, polarizer device 302 can be disposed between modulator device 108 and mirror device 110. In this way, laser device 300 can be configured to polarize electromagnetic waves emitted by optical crystal 106 before providing electromagnetic waves to optical crystal 114. The devices and other components of laser device 300 can have features, configurations, and / or materials corresponding to the devices or other components of laser device 100 and / or laser device 200.

[0057] The mirror device 110 can be configured to reflect a high proportion (e.g., about 98% and / or greater than or equal to 90%) of electromagnetic waves outside the configured wavelength range (e.g., the wavelength associated with the electromagnetic waves emitted by the optical crystal 106), and allow a high proportion (e.g., about 98% and / or greater than or equal to 90%) of electromagnetic waves within the configured wavelength range to pass through. In this way, the mirror device 110 can reduce the amount of electromagnetic waves emitted from the first portion 112 of the laser device 300 that are not configured to stimulate electromagnetic waves with the desired wavelength.

[0058] Along the transmission path, after the first portion 112 of the laser device 300, the laser device 300 may include an optical crystal 114 configured to receive electromagnetic waves emitted by optical crystal 106 and to emit electromagnetic waves of other wavelengths. The optical crystal 114 may include a thin-film coating 116 located at an end of the optical crystal 114 near the first portion 112 (e.g., towards the rear). The thin-film coating 116 may be configured to receive electromagnetic waves emitted from optical crystal 106 (when received via the first portion 112) and reflect electromagnetic waves generated by optical crystal 106 (when propagating within optical crystal 114). The thin-film coating 116 may also be configured to allow electromagnetic waves generated by optical crystal 114 (e.g., based on receiving electromagnetic waves emitted from optical crystal 106) to pass through.

[0059] Optical crystal 114 may include a thin film coating 118 located at an end of optical crystal 114 remote from the first portion 112 (e.g., towards the front end). Thin film coating 118 may be configured to reflect electromagnetic waves generated by optical crystal 114 and / or emitted from optical crystal 106. In some embodiments, the manufacturing tolerances (e.g., thickness and / or roughness) of thin film coating 118 are greater than those of thin film coating 116.

[0060] In some embodiments, the thin film coating 118 includes two or more inclined surfaces having reflective films 118a and 118b disposed thereon. The two or more inclined surfaces may be formed at an angle symmetrical about a longitudinal axis 130, which is parallel to the transmission path in the direction from the first portion 112 to the second portion 120 of the laser device.

[0061] In some embodiments, the laser device 300 further includes a beam splitter 304 disposed along the transmission path after the second electromagnetic wave is emitted via the optical crystal 114. In some embodiments, the beam splitter 304 may be configured to reflect the second electromagnetic wave based on the polarization of the second electromagnetic wave.

[0062] Beam splitter 304 and optical crystal 114 having thin film coatings 116 and 118 may be part of portion 120 of laser device 300. Portion 120 is located further away from the first portion 112 along the transmission path of laser device 300.

[0063] In an example operation of the laser device 300, the optical crystal 106 may emit a first electromagnetic wave 122. The first electromagnetic wave 122 may propagate in a forward direction toward a second portion 120 of the laser device 300 (e.g., toward the optical crystal 114). In some embodiments, a portion of the first electromagnetic wave 122 may propagate in a rearward direction and may be reflected by the mirror device 102, such that this portion of the first electromagnetic wave 122 may propagate in a forward direction.

[0064] Optical crystal 114 receives a first electromagnetic wave 122, which has polarization and / or has previously propagated through beam splitter 304, via thin film coating 116, and emits a second electromagnetic wave 124 based on the reception of the first electromagnetic wave 122. The second electromagnetic wave 124 and / or the first electromagnetic wave 122 (collectively referred to as electromagnetic waves) can be reflected from two or more inclined surfaces having reflective films 118a and 118b disposed thereon. Based on the two or more inclined surfaces formed at an angle symmetrical about the longitudinal axis 130, the electromagnetic waves can be reflected such that the electromagnetic waves propagate in a direction opposite to the direction of propagation of the electromagnetic waves before reflection from the two or more inclined surfaces.

[0065] The second electromagnetic wave 124 can exit the optical crystal 114 based on the selection of the thin-film coating 116, and the first electromagnetic wave 122 can be internally reflected by the thin-film coating 116. After being emitted by the optical crystal 114, the second electromagnetic wave 124 can be reflected using a beam splitter 304. The second electromagnetic wave 124 can be reflected by the beam splitter 304 to a direction different from the transmission direction of the laser device 300. In some embodiments, the electromagnetic wave 124 can be reflected based on the beam splitter acting as a polarization beam splitter and based on the second electromagnetic wave 124 being polarized (e.g., with little or no splitting). The second electromagnetic wave 124 can be polarized based on the polarization of the first electromagnetic wave 122 by the polarizer device 302.

[0066] In some embodiments, a first electromagnetic wave 122 can enter an optical crystal 114 and stimulate the generation of a second electromagnetic wave 124 within the optical crystal 114. In some embodiments, a portion of the electromagnetic wave 122 within the optical crystal 114 can propagate through the optical crystal 114, be reflected from the thin film coating 118, and then be internally reflected by the thin film coating 116, such that this portion of the first electromagnetic wave 122 propagates back through the optical crystal 114, thus providing an additional opportunity to stimulate the generation of the second electromagnetic wave 124. In this way, the optical crystal 114 can use the stimulation from the first electromagnetic wave to generate and emit the second electromagnetic wave 124, and the amount of propagation of the first electromagnetic wave 122 and the second electromagnetic wave 124 outside the optical crystal 114 is reduced during stimulation. Additionally or alternatively, the effective length of the optical crystal 114 (e.g., associated with the amount of the second electromagnetic wave to be emitted) can be greater than the actual length of the optical crystal 114. For example, the effective length can be approximately twice the actual length.

[0067] In some embodiments, the gain device 104 receives an input signal 126 to configure population inversion of the gain device 104. In some embodiments, the input signal 126 may include an electrical signal configured to induce electronic excitation within the gain device 104. Electronic excitation within the gain device 104 may cause the gain device 104 to emit electromagnetic waves that induce electronic excitation and / or stimulation within the optical crystal 106. Figure 3 The electromagnetic wave 122 shown is emitted. In some embodiments, the modulator device 108 receives a control signal 128 to cause the modulator device 108 to form a pulse of the first electromagnetic wave 122 before providing the first electromagnetic wave 122 to the second portion 120.

[0068] Figure 4 This is a schematic diagram of an example environment in which the systems and / or methods described herein can be implemented. Figure 4 An example system 400 (e.g., an inspection tool) is shown, in which laser device 100, laser device 200 and / or laser device 300 can be used.

[0069] like Figure 4As shown, laser device 402 (e.g., laser device 100, laser device 200, and / or laser device 300) can emit electromagnetic waves toward the object to be inspected. In some embodiments, laser device 402 may have a reduced length (e.g., in the direction along the electromagnetic wave path) based on one or more features described in conjunction with laser device 100, laser device 200, and / or laser device 300. In some embodiments, laser device 402 may consume a reduced amount of power resources and / or generate an increased amount of electromagnetic waves based on one or more features described in conjunction with laser device 100, laser device 200, and / or laser device 300. In some embodiments, laser device 402 may have a reduced electromagnetic wave frequency bandwidth based on one or more features described in conjunction with laser device 100, laser device 200, and / or laser device 300. In this way, laser device 402 can generate a set of electromagnetic waves that provide an inspection tool with improved result consistency (e.g., improved consistency based on electromagnetic wave refraction and / or reflection from the object).

[0070] Electromagnetic waves can pass through intensity modulator 404, filter 406, and / or polarizer 408. In some embodiments, intensity modulator 404 can control the power of electromagnetic waves directed towards an object. In some embodiments, filter 406 can filter out frequencies outside the desired frequency range from the electromagnetic waves. For example, filter 406 can be correlated with a desired frequency, such that electromagnetic waves at or within a threshold difference from the desired frequency pass through filter 406. Polarizer 408 can polarize the electromagnetic waves, giving them a common polarization (e.g., horizontal or vertical polarization). In this way, the consistency of refraction of the electromagnetic waves from the object can be improved. Alternatively or additionally, polarizer 408 can be configured together with intensity modulator 404 to reduce the power of the electromagnetic waves to a desired power range.

[0071] Electromagnetic waves can be emitted by laser device 402 and can pass through intensity modulator 404, filter 406, and / or polarizer 408 before interacting with the object under inspection 410 (e.g., placed on inspection surface 412). Electromagnetic waves can be emitted toward the object such that they can be reflected and / or refracted from one or more surfaces of the object 410. Based at least in part on the reflection and / or refraction from one or more surfaces of the object 410, the system can detect features of the object 410, such as its morphology. In some embodiments, the object 410 can be a manufactured semiconductor chip (e.g., a device under test), or it can be a wafer or semiconductor chip in an intermediate state during the manufacturing process.

[0072] After reflection or refraction from one or more surfaces of object 410, electromagnetic waves can pass through compensator 414 and / or analyzer 416. Compensator 414 and analyzer 416 may form or include a polarizer compensator sample analyzer, which enhances the contrast of the image inspection and forms an image on the system's photosensitive element. For example, compensator 414 and analyzer 416 may enhance the reception of electromagnetic waves to form an image on detector 418. In some embodiments, the image may be a grayscale image with resolution and / or contrast improved at least in part based on the compensator and / or analyzer. Detector 418 may provide the image or associated information to data acquisition device 422 via communication medium 420. Data acquisition device 422 may include a processor, memory, and / or one or more other elements that support the analysis and / or storage of images of object 410 based on the reception of electromagnetic waves emitted by laser device 402. Data acquisition device 422 may provide the image to another device and / or may report the status associated with object 410 (e.g., passed inspection or failed inspection).

[0073] Figure 5 This is a schematic diagram of example components of device 500, which may correspond to the controller of laser device 100, 200, 300, or 402, the controller of system 400, and / or the data acquisition device 422. In some embodiments, the controller of laser device 100, 200, 300, or 402, the controller of system 400, and / or the data acquisition device 422 may include one or more devices 500 and / or one or more components of device 500. Figure 5 As shown, device 500 may include bus 510, processor 520, memory 530, input component 540, output component 550 and communication component 560.

[0074] Bus 510 includes one or more components that support wired and / or wireless communication between components of device 500. Bus 510 can... Figure 5 Two or more components are coupled together, for example via operational coupling, communication coupling, electronic coupling, and / or electrical coupling. Processor 520 includes a central processing unit, graphics processing unit, microprocessor, controller, microcontroller, digital signal processor, field-programmable gate array, application-specific integrated circuit, and / or other types of processing components. Processor 520 is implemented in hardware, firmware, or a combination of hardware and software. In some embodiments, processor 520 includes one or more processors that can be programmed to perform one or more operations or processes described elsewhere herein.

[0075] Memory 530 includes volatile and / or non-volatile memory. For example, memory 530 may include random access memory (RAM), read-only memory (ROM), hard disk drive, and / or another type of memory (e.g., flash memory, magnetic storage, and / or optical storage). Memory 530 may include internal memory (e.g., RAM, ROM, or hard disk drive) and / or removable memory (e.g., removable via a universal serial bus). Memory 530 may be a non-transitory computer-readable medium. Memory 530 stores information, instructions, and / or software (e.g., one or more software applications) related to the operation of device 500. In some embodiments, memory 530 includes one or more memories coupled to one or more processors (e.g., processor 520), for example, via bus 510.

[0076] Input component 540 enables device 500 to receive input, such as user input and / or sensed input. For example, input component 540 may include a touchscreen, keyboard, keys, mouse, button, microphone, switch, sensor, GPS sensor, accelerometer, gyroscope, and / or actuator. Output component 550 enables device 500 to provide output, such as via a display, speaker, and / or light-emitting diode. Communication component 560 enables device 500 to communicate with other devices via a wired and / or wireless connection. For example, communication component 560 may include a receiver, transmitter, transceiver, modem, network interface card, and / or antenna.

[0077] Device 500 can perform one or more of the operations or processes described herein. For example, a non-transitory computer-readable medium (e.g., memory 530) can store a set of instructions (e.g., one or more instructions or code) for execution by processor 520. Processor 520 can execute the set of instructions to perform one or more of the operations or processes described herein. In some embodiments, the set of instructions is executed by one or more processors 520, causing one or more processors 520 and / or device 500 to perform one or more of the operations or processes described herein. In some embodiments, hardwired circuitry may be used in place of or in combination with instructions to perform one or more of the operations or processes described herein. Additionally or alternatively, processor 520 may be configured to perform one or more of the operations or processes described herein. Therefore, the embodiments described herein are not limited to any particular combination of hardware circuitry and software.

[0078] Figure 5 The number and arrangement of components shown are provided as an example. Device 500 may include components with... Figure 5The components shown may be additional, fewer, different, or arranged differently. Alternatively, a set of components of device 500 (e.g., one or more components) may perform one or more functions described as being performed by another set of components of device 500.

[0079] Figure 6 This is a flowchart of an example process 600 related to the laser device and processes described herein. For example, process 600 involves using a laser device. In some embodiments, Figure 6 One or more process blocks can be executed by one or more laser devices (e.g., laser device 100, laser device 200, laser device 300, and / or laser device 402). Alternatively or additionally, Figure 6 One or more process blocks may be executed by one or more components of the device 500, such as processor 520, memory 530, input component 540, output component 550 and / or communication component 560.

[0080] like Figure 6 As shown, process 600 may include receiving an input signal into a first portion of the laser device that stimulates the emission of a first electromagnetic wave having a first wavelength (block 610). For example, the laser device may receive an input signal 126 into a first portion 112 of the laser device (e.g., laser devices 100, 200, and / or 300) that stimulates the emission of a first electromagnetic wave 122 having a first wavelength, as described above.

[0081] like Figure 6 As further shown, process 600 may include receiving a first electromagnetic wave via an optical crystal in the second portion of the laser device (block 620). For example, as described herein, the laser device may receive the first electromagnetic wave 122 via an optical crystal 114 in the second portion of the laser device. In some embodiments, the optical crystal 114 includes a thin film coating (e.g., thin film coating 116 or 118) disposed at an end of the optical crystal 114. In some embodiments, the thin film coating is configured to emit a second electromagnetic wave 124 from the optical crystal 114 based on the reception of the first electromagnetic wave 122, and to cause internal reflection of the first electromagnetic wave 122 within the optical crystal 114.

[0082] like Figure 6 As further shown, process 600 may include emitting a second electromagnetic wave via an optical crystal (block 630). For example, as described herein, a laser device may emit a second electromagnetic wave 124 via optical crystal 114.

[0083] Process 600 may include additional implementations, such as any single implementation or any combination of implementations of one or more other processes described below and / or elsewhere herein.

[0084] In a first embodiment, process 600 includes receiving an input (e.g., a control signal 128) at a modulator device 108 within a first portion 112 of the laser device, and modulating the first electromagnetic wave 122 by the modulator device 108 before the first electromagnetic wave 122 is received by the optical crystal 114.

[0085] In the second embodiment, either alone or in combination with the first embodiment, process 600 includes polarizing a first electromagnetic wave 122 via a polarizer device 302 within the first portion 112 of the laser device.

[0086] In the third embodiment, either alone or in combination with one or more of the first and second embodiments, process 600 includes a portion 124a of the second electromagnetic wave 124 reflected via beam splitter 202 or beam splitter 304 and after being emitted from optical crystal 114, in a direction not parallel to the transmission path of the first electromagnetic wave 122.

[0087] In the fourth embodiment, either alone or in combination with one or more of the first to third embodiments, the end of the optical crystal 114 with the thin film coating 116 is close to the first portion 112, and the additional end of the optical crystal 114 (opposite to the end of the optical crystal 114 with the thin film coating 116) includes two or more inclined surfaces having reflective films 118a and 118b disposed thereon, and the reflective films 118a and 118b are configured to internally reflect the first electromagnetic wave 122 and the second electromagnetic wave 124 from the additional end.

[0088] although Figure 6 An example block of process 600 is shown, but in some implementations, process 600 may include... Figure 6 The comparison shown includes additional blocks, fewer blocks, different blocks, or blocks with different arrangements. Alternatively, two or more blocks of process 600 can be executed in parallel.

[0089] Figure 7 This is a flowchart of an example process 700 related to the laser device and processes described herein. For example, process 700 involves using a laser device. In some embodiments, Figure 7 One or more process blocks can be performed by one or more semiconductor processing tools (e.g., deposition tools, etching tools, and / or wafer / die transfer tools). Alternatively or additionally, Figure 7One or more process blocks may be executed by one or more components of the device 500, such as processor 520, memory 530, input component 540, output component 550 and / or communication component 560.

[0090] like Figure 7 As shown, process 700 may include setting one or more optical devices (block 710) within a first portion of the laser device. For example, as described herein, one or more semiconductor processing tools may set one or more optical devices (e.g., devices 102, 104, 106, 108, 110 and / or 302) within the first portion 112 of the laser device. In some embodiments, the first portion 112 is configured to receive and transmit a first electromagnetic wave 122 having a first wavelength based on an input signal 126.

[0091] like Figure 7 As further shown, process 700 may include depositing a thin film coating on the end of the optical crystal, the thin film coating being configured to support the emission of a second electromagnetic wave having a second wavelength from the optical crystal based on the reception of a first electromagnetic wave, and to support internal reflection of the first electromagnetic wave within the optical crystal (block 720). For example, as described herein, one or more semiconductor processing tools may deposit a thin film coating (116 or 118) on the end of the optical crystal 114. In some embodiments, the thin film coating 116 or 118 is configured to support the emission of a second electromagnetic wave 124 having a second wavelength from the optical crystal 114 based on the reception of a first electromagnetic wave 122, and to support internal reflection of the first electromagnetic wave 122 within the optical crystal 114.

[0092] like Figure 7 As further shown, process 700 may include placing an optical crystal (block 730) within a second portion of the laser device. For example, as described herein, one or more semiconductor processing tools may place the optical crystal 114 within the second portion 120 of the laser device. In some embodiments, the laser device is configured to provide a first electromagnetic wave to the optical crystal within the second portion of the laser device.

[0093] Process 700 may include additional implementations, such as any single implementation or any combination of implementations of one or more other processes described below and / or elsewhere herein.

[0094] In a first embodiment, depositing a thin film coating (116 or 118) at the end of the optical crystal 114 includes depositing a thin film coating of thickness T1 or T2 at the end of the optical crystal 114 to support the emission of a second electromagnetic wave 124 from the optical crystal 114 and to support the internal reflection of a first electromagnetic wave 122 within the optical crystal 114, wherein the thickness (T1 or T2) is based on the first wavelength, the second wavelength, and the material of the thin film coating (116 or 118).

[0095] although Figure 7 An example block of process 700 is shown, but in some implementations, process 700 may include... Figure 7 The comparison shown includes additional blocks, fewer blocks, different blocks, or blocks with different arrangements. Alternatively, two or more blocks of process 700 can be executed in parallel.

[0096] Figure 8 This is a schematic diagram of the example lithography system 800 described herein. The lithography system 800 includes an extreme ultraviolet (EUV) lithography system or another type of lithography system configured to transfer patterns onto a semiconductor substrate using mirror-based optics. The lithography system 800 can be configured for use in semiconductor processing environments, such as semiconductor foundries or semiconductor manufacturing facilities.

[0097] like Figure 8 As shown, the photolithography system 800 includes a radiation source 802 and an exposure tool 804. The radiation source 802 (e.g., an EUV radiation source or another type of radiation source) is configured to generate radiation 806, such as EUV radiation and / or another type of electromagnetic radiation (e.g., light). The exposure tool 804 (e.g., an EUV scanner tool, an EUV exposure tool, or another type of exposure tool) is configured to focus the radiation 806 onto a reflective mask 808 (or a photomask), thereby using the radiation 806 to transfer a pattern from the mask 808 onto a semiconductor substrate 810.

[0098] Radiation source 802 includes container 812 and collector 814 within container 812. Collector 814 includes a curved mirror configured to collect radiation 806 generated by radiation source 802 and focus radiation 806 to an intermediate focal point 816. Radiation 806 is generated by plasma produced from droplets 818 of target material (e.g., droplets of target material including Sn droplets or another type of droplet) exposed to laser beam 820. Droplets 818 are provided at the front of collector 814 by droplet generator (DG) 822. Droplet generator 822 is pressurized to provide a fine and controlled output of droplets 818. Laser beam 820 is provided such that it is focused through window 824 of collector 814. Laser beam 820 is focused onto droplets 818 that generate plasma. Plasma produces plasma emission, some of which is radiation 806.

[0099] Exposure tool 804 includes an illuminator 826 and a projection optics box (POB) 828. The illuminator 826 includes multiple mirrors configured to focus and / or direct radiation 806 onto a mask 808 to illuminate a pattern on the mask 808. The mirrors include, for example, mirrors 830a and 830b. Mirror 830a includes a field faceted mirror (FFM) or another type of mirror including multiple field facets. Mirror 830b includes a pupil faceted mirror (PFM) or another type of mirror including multiple pupil facets. The facets of mirrors 830a and 830b are arranged to focus, polarize, and / or otherwise tune radiation 806 from radiation source 802 to increase the uniformity of radiation 806 and / or increase specific types of radiation components (e.g., transversely electrically (TE) polarized radiation, transversely magnetically (TM) polarized radiation). Includes another mirror 832 (e.g., a relay mirror) to direct radiation 806 from illuminator 826 onto mask 808.

[0100] The projection optics box 828 includes a plurality of mirrors configured to project radiation 806 onto the semiconductor substrate 810 after pattern modification of radiation 806 based on a mask 808. The plurality of mirrors includes, for example, mirrors 834a-834f. In some embodiments, mirrors 834a-834f are configured to focus or reduce radiation 806 into an exposure field that may include one or more die regions on the semiconductor substrate 810.

[0101] Exposure tool 804 includes a wafer stage 836 (or substrate stage) configured to support a semiconductor substrate 810. Furthermore, wafer stage 836 is configured to move (or step) the semiconductor substrate 810 through multiple exposure fields as radiation 806 transfers a pattern from a mask 808 onto the semiconductor substrate 810. Wafer stage 836 is included in a bottom module 838 of exposure tool 804. Bottom module 838 includes a removable subsystem of exposure tool 804. Bottom module 838 can slide out of and / or otherwise remove from exposure tool 804 to enable cleaning and inspection of wafer stage 836 and / or its components. Bottom module 838 isolates wafer stage 836 from other areas in exposure tool 804 to reduce and / or minimize contamination of the semiconductor substrate 810. Furthermore, the bottom module 838 can provide physical isolation for the wafer stage 836 by reducing the transmission of vibrations (e.g., vibrations in the semiconductor processing environment in which the lithography system 800 is located, vibrations within the lithography system 800 during operation) to the wafer stage 836, and thus, provide physical isolation for the semiconductor substrate 810. This reduces movement and / or disturbance of the semiconductor substrate 810, lowering the likelihood that vibrations may cause pattern misalignment.

[0102] The exposure tool 804 also includes a mask stage 840, which is configured to support and / or fix the mask 808. Furthermore, the mask stage 840 is configured to move or slide the mask within the radiation lines 806, such that the radiation lines 806 scan the mask 808. In this way, a pattern of a field or beam larger than the radiation 806 can be transferred to the semiconductor substrate 810.

[0103] The lithography system 800 includes a laser source 842. The laser source 842 may include laser device 100, laser device 200, and / or laser device 300. The laser source 842 is configured to generate a laser beam 820. The laser source 842 may include a CO2-based laser source or another type of laser source. Due to the wavelength of the laser beam generated by the CO2-based laser source in the infrared (IR) region, the laser beam may be highly absorbed by tin, enabling the CO2-based laser source to achieve high power and energy for pumping tin-based plasmas. In some embodiments, the laser beam 820 includes multiple types of laser beams generated by the laser source 842 using multi-pulse technology (or multi-stage pumping technology), wherein the laser source 842 generates a pre-pulse laser beam and a main pulse laser beam to achieve higher heating efficiency of the Sn-based plasma, thereby improving conversion efficiency.

[0104] In an example exposure operation (e.g., an EUV exposure operation), a droplet generator 822 provides a flow of droplets 818 in front of a collector 814. A laser beam 820 contacts the droplets 818, thereby generating plasma. A laser source 842 generates a pre-pulsed laser beam and provides it towards the target material droplets in the flow of droplets 818, and the pre-pulsed laser beam is absorbed by the target material droplets. This transforms the target material droplets into a disk-shaped or fog-like structure. Subsequently, the laser source 842 provides a main-pulsed laser beam with high intensity and energy towards the disk-shaped target or target fog. Here, the atoms of the target material are neutralized, and ions are generated through thermal flux and shock waves. The main-pulsed laser beam pumps the ions to a higher charge state, causing the ions to radiate radiation 806 (e.g., EUV light).

[0105] Radiation 806 is collected by collector 814 and guided out of container 812, entering exposure tool 804 towards mirror 830a of illuminator 826. Mirror 830a reflects radiation 806 onto mirror 830b, which in turn reflects radiation 806 towards mask 808 onto mirror 832. Radiation 806 is modified by the pattern in mask 808. In other words, radiation 806 is reflected from mask 808 based on the pattern of mask 808. Reflecting mask 808 guides radiation 806 to mirror 834a in projection optics 828, which reflects radiation 806 onto mirror 834b. Radiation 806 continues to be reflected and reduced by mirrors 834c-834f in projection optics 828. Mirror 834f reflects radiation 806 onto semiconductor substrate 810, transferring the pattern of mask 808 onto semiconductor substrate 810. The above exposure operation is an example, and the lithography system 800 can operate according to other EUV technologies and radiation paths, including a larger number of mirrors, a smaller number of mirrors, and / or different mirror configurations.

[0106] As mentioned above, providing Figure 8 As an example. Other examples may differ from those regarding... Figure 8 Examples of the description. For example, another example could include... Figure 8 The components shown are additional, fewer, different, or differently arranged. Alternatively, Figure 8 A set of components (e.g., one or more components) can perform one or more functions as described herein that are performed by another set of components.

[0107] Based on the use of an optical crystal as a resonator in a laser device having one or more thin-film coatings at one or more ends of the optical crystal (e.g., towards the rear or front end along the transmission path of the laser device), a mirror device with a thin-film coating around the optical crystal may be unnecessary. This allows the manufacturing process of the laser device to avoid unnecessary cost and resource consumption for providing mirror devices with thin-film coatings. Furthermore, the first and second electromagnetic waves can reduce propagation between devices (e.g., between the optical crystal and the mirror device with the thin-film coating), which can reduce energy loss due to particle collisions and / or reduce scattering caused by the roughness of the thin-film coating. In this way, the laser device can, for example, improve energy efficiency and / or reduce manufacturing costs and / or time, etc.

[0108] As described in more detail above, some embodiments described herein provide a laser device. The laser device includes a first portion located at a proximal end of the laser device, the first portion including one or more optical elements, wherein the first portion is configured to emit a first electromagnetic wave having a first wavelength. The laser device includes a second portion located at a distal end of the laser device, the second portion including an optical crystal configured to receive the first electromagnetic wave and, based on the reception of the first electromagnetic wave, emit a second electromagnetic wave having a second wavelength, wherein the optical crystal includes a thin-film coating disposed at an end of the optical crystal, the thin-film coating being configured to: support the emission of the second electromagnetic wave from the optical crystal and support internal reflection of the first electromagnetic wave within the optical crystal.

[0109] As described in more detail above, some embodiments described herein provide a method. The method includes receiving an input signal into a first portion of a laser device, the input signal stimulating the emission of a first electromagnetic wave having a first wavelength. The method further includes receiving the first electromagnetic wave via an optical crystal in a second portion of the laser device. The optical crystal includes a thin-film coating disposed at an end of the optical crystal. The thin-film coating is configured to: based on the reception of the first electromagnetic wave, emit a second electromagnetic wave from the optical crystal, and cause the first electromagnetic wave to undergo internal reflection within the optical crystal. The method further includes emitting the second electromagnetic wave via the optical crystal.

[0110] As described in more detail above, some embodiments described herein provide a method. The method includes disposing one or more optical elements within a first portion of a laser device. The first portion is configured to emit a first electromagnetic wave having a first wavelength based on the reception of an input signal. The method further includes depositing a thin-film coating at an end of an optical crystal. The thin-film coating is configured to support the emission of a second electromagnetic wave having a second wavelength from the optical crystal based on the reception of the first electromagnetic wave, and to support internal reflection of the first electromagnetic wave within the optical crystal. The method further includes disposing an optical crystal within a second portion of the laser device, wherein the laser device is configured to provide the first electromagnetic wave to the optical crystal within the second portion of the laser device.

[0111] As described in more detail above, some embodiments described herein provide a method. The method includes emitting electromagnetic waves toward an object to be inspected using a laser device. The laser device includes a first portion configured to emit a first electromagnetic wave having a first wavelength. The laser device also includes a second portion comprising an optical crystal configured to receive the first electromagnetic wave and, based on the reception of the first electromagnetic wave, emit a second electromagnetic wave having a second wavelength. The optical crystal includes a thin-film coating disposed at an end of the optical crystal, the thin-film coating being configured to support the emission of the second electromagnetic wave from the optical crystal and to support internal reflection of the first electromagnetic wave within the optical crystal. The method further includes receiving a portion of the electromagnetic wave after it has been reflected or refracted from one or more surfaces of the object. The method may also include analyzing an image of the object based on the received electromagnetic waves emitted by the laser device.

[0112] This disclosure outlines features of several embodiments to enable those skilled in the art to better understand various aspects of this disclosure. Those skilled in the art will understand that they can readily use this disclosure as a basis for designing or modifying other processes and structures to achieve the same purposes and / or advantages as the embodiments introduced herein. Those skilled in the art will also recognize that these equivalent constructions do not depart from the spirit and scope of this disclosure, and that various changes, substitutions, and alterations can be made herein without departing from the spirit and scope of this disclosure.

[0113] Example 1. A laser device comprising: a first portion of the laser device located at a proximal end of the laser device, the first portion including one or more optical elements, wherein the first portion is configured to emit a first electromagnetic wave having a first wavelength; and a second portion of the laser device located at a distal end of the laser device, the second portion including an optical crystal configured to receive the first electromagnetic wave and, based on the reception of the first electromagnetic wave, emit a second electromagnetic wave having a second wavelength, wherein the optical crystal includes a thin film coating disposed at an end of the optical crystal, the thin film coating being configured to: support the emission of the second electromagnetic wave from the optical crystal and support internal reflection of the first electromagnetic wave within the optical crystal.

[0114] Example 2. The laser device according to Example 1, wherein the first portion includes: an additional optical crystal configured to generate the first electromagnetic wave.

[0115] Example 3. The laser device according to Example 1, wherein the first part includes: a modulator device configured to modulate the first electromagnetic wave before providing the first electromagnetic wave to the second part.

[0116] Example 4. The laser device according to Example 3, wherein the modulation of the first electromagnetic wave includes forming a pulse of the first electromagnetic wave based on a control signal.

[0117] Example 5. The laser device according to Example 1, wherein the thin film coating is a first thin film coating and the end of the optical crystal is a first end of the optical crystal, wherein the optical crystal includes a second thin film coating disposed at a second end of the optical crystal, wherein the second thin film coating is configured to: support the reception of the first electromagnetic wave into the optical crystal and support the internal reflection of the second electromagnetic wave within the optical crystal.

[0118] Example 6. The laser device according to Example 1, wherein the end of the optical crystal provided with the thin film coating is close to the first portion, and wherein an additional end of the optical crystal opposite to the end of the optical crystal provided with the thin film coating includes two or more inclined surfaces having a reflective film disposed thereon.

[0119] Example 7. The laser device according to Example 6, wherein the two or more inclined surfaces are formed at an angle symmetrical about a longitudinal axis parallel to the transmission path in the direction from the first part to the second part of the laser device.

[0120] Example 8. The laser device according to Example 6, wherein the reflective film is configured to support internal reflection of the first electromagnetic wave and the second electromagnetic wave.

[0121] Example 9. The laser device according to Example 6, wherein the optical crystal is configured to receive the first electromagnetic wave from a first direction, and wherein the optical crystal is configured to emit the second electromagnetic wave along a second direction opposite to the first direction.

[0122] Example 10. A laser device according to Example 6, wherein the optical crystal is configured to receive the first electromagnetic wave from a first direction, wherein the optical crystal is configured to emit the second electromagnetic wave along a second direction, and wherein a second portion of the laser device includes a beam splitter configured to reflect a portion of the second electromagnetic wave along a third direction different from the first and second directions after the second electromagnetic wave is emitted from the optical crystal.

[0123] Example 11. A laser device according to Example 10, wherein a first portion of the laser device includes a polarizer device configured to polarize the first electromagnetic wave before the optical crystal receives the first electromagnetic wave, and wherein the beam splitter is a polarization beam splitter configured to reflect that portion of the second electromagnetic wave along the third direction based on the polarization of the second electromagnetic wave.

[0124] Example 12. The laser device according to Example 1, wherein the thin film coating is configured to support the emission of the second electromagnetic wave from the optical crystal and to support the internal reflection of the first electromagnetic wave within the optical crystal based on the following: the first wavelength, the second wavelength, the material of the thin film coating, and the thickness of the thin film coating.

[0125] Example 13. The laser device according to Example 1, wherein the second part of the laser device does not have a mirror device disposed along the transmission path of the second electromagnetic wave after the second electromagnetic wave is emitted from the optical crystal.

[0126] Example 14. A method of using a laser device, comprising: receiving an input signal into a first portion of the laser device, the input signal stimulating the emission of a first electromagnetic wave having a first wavelength; receiving the first electromagnetic wave via an optical crystal in a second portion of the laser device, wherein the optical crystal includes a thin film coating disposed at an end of the optical crystal, the thin film coating being configured to: emit a second electromagnetic wave from the optical crystal based on the reception of the first electromagnetic wave, and cause the first electromagnetic wave to undergo internal reflection within the optical crystal; and emitting the second electromagnetic wave via the optical crystal.

[0127] Example 15. The method according to Example 14 further includes: receiving an input at a modulator device within a first portion of the laser device, and modulating the first electromagnetic wave by the modulator device before the first electromagnetic wave is received by the optical crystal.

[0128] Example 16. The method according to Example 14 further includes: polarizing the first electromagnetic wave via a polarizer device within a first portion of the laser device.

[0129] Example 17. The method according to Example 14 further includes: reflecting a portion of the second electromagnetic wave via a beam splitter and in a direction not parallel to the transmission path of the first electromagnetic wave after the second electromagnetic wave is emitted from the optical crystal.

[0130] Example 18. The method according to Example 14, wherein the end of the optical crystal having the thin film coating is close to the first portion, wherein an additional end of the optical crystal opposite to the end of the optical crystal having the thin film coating includes two or more inclined surfaces having a reflective film disposed thereon, and wherein the reflective film is configured to internally reflect the first electromagnetic wave from the additional end and internally reflect the second electromagnetic wave.

[0131] Example 19. A method of using a laser device, comprising: emitting electromagnetic waves toward an object to be inspected via the laser device, the laser device comprising: a first portion of the laser device configured to emit a first electromagnetic wave having a first wavelength; and a second portion of the laser device including an optical crystal configured to receive the first electromagnetic wave and, based on the reception of the first electromagnetic wave, emit a second electromagnetic wave having a second wavelength, wherein the optical crystal includes a thin film coating disposed at an end of the optical crystal, the thin film coating being configured to support the emission of the second electromagnetic wave from the optical crystal and to support internal reflection of the first electromagnetic wave within the optical crystal; and receiving a portion of the electromagnetic wave after the electromagnetic wave has been reflected or refracted from one or more surfaces of the object.

[0132] Example 20. The method according to Example 19 further includes: analyzing an image of the object based on receiving electromagnetic waves emitted by the laser device.

Claims

1. A laser device, comprising: A first portion of the laser device, located at its proximal end, includes one or more optical components. The first portion is configured to emit a first electromagnetic wave having a first wavelength; and A second portion of the laser device, located at the distal end of the laser device, includes an optical crystal configured to receive the first electromagnetic wave and, based on the reception of the first electromagnetic wave, emit a second electromagnetic wave having a second wavelength. The optical crystal includes: The first end has a thin film coating disposed thereon; and The second end includes two or more inclined surfaces having a reflective film disposed thereon, wherein the two or more inclined surfaces are formed at an angle symmetrical about a longitudinal axis parallel to the transmission path in the direction from the first part to the second part of the laser device.

2. The laser device according to claim 1, wherein, The first part includes: An additional optical crystal is configured to generate the first electromagnetic wave.

3. The laser device according to claim 1, wherein, The first part includes: A modulator device is configured to modulate the first electromagnetic wave before providing the first electromagnetic wave to the second part.

4. The laser device according to claim 3, wherein, Modulation of the first electromagnetic wave includes forming pulses of the first electromagnetic wave based on a control signal.

5. The laser device according to claim 1, wherein, The thin film coating is a first thin film coating. The optical crystal includes a second thin-film coating disposed at the second end of the optical crystal, the second thin-film coating including the reflective film. The second thin film coating is configured as follows: Supports receiving the first electromagnetic wave into the optical crystal, and Supports the internal reflection of the second electromagnetic wave within the optical crystal.

6. The laser device according to claim 1, wherein, The first end of the optical crystal is close to the first portion, and Wherein, the second end of the optical crystal is opposite to the first end.

7. The laser device according to claim 1, wherein, The reflective film is configured to support internal reflection of the first electromagnetic wave and the second electromagnetic wave.

8. The laser device according to claim 1, wherein, The optical crystal is configured to receive the first electromagnetic wave from a first direction, and The optical crystal is configured to emit the second electromagnetic wave along a second direction opposite to the first direction.

9. The laser device according to claim 1, wherein, The optical crystal is configured to receive the first electromagnetic wave from a first direction. The optical crystal is configured to emit the second electromagnetic wave along a second direction, and The second part of the laser device includes a beam splitter configured to reflect a portion of the second electromagnetic wave along a third direction different from the first and second directions after the second electromagnetic wave is emitted from the optical crystal.

10. The laser device according to claim 9, wherein, The first part of the laser device includes a polarizer device configured to polarize the first electromagnetic wave before the optical crystal receives it. The beam splitter is a polarization beam splitter configured to reflect a portion of the second electromagnetic wave along the third direction based on the polarization of the second electromagnetic wave.

11. The laser device according to claim 1, wherein, The thin-film coating is configured to support the emission of the second electromagnetic wave from the optical crystal and to support the internal reflection of the first electromagnetic wave within the optical crystal, based on the following: The first wavelength, The second wavelength, The material of the thin film coating, and The thickness of the thin film coating.

12. The laser device according to claim 1, wherein, The second part of the laser device does not have a mirror device disposed along the transmission path of the second electromagnetic wave after the second electromagnetic wave is emitted from the optical crystal.

13. A method of using a laser device, comprising: An input signal is received in the first part of the laser device, and the input signal stimulates the emission of a first electromagnetic wave having a first wavelength; The first electromagnetic wave is received via an optical crystal in the second part of the laser device, wherein the optical crystal comprises: The first end has a thin film coating disposed thereon, the thin film coating being configured as follows: Based on the reception of the first electromagnetic wave, a second electromagnetic wave is emitted from the optical crystal, and This causes the first electromagnetic wave to be internally reflected within the optical crystal; and The second end includes two or more inclined surfaces, each having a reflective film disposed thereon, wherein the two or more inclined surfaces are formed at an angle symmetrical about a longitudinal axis parallel to the transmission path in the direction from the first portion to the second portion of the laser device; and The second electromagnetic wave is emitted via the optical crystal.

14. The method of claim 13, further comprising: The input is received at the modulator device within the first part of the laser device, and The first electromagnetic wave is modulated by the modulator device before being received by the optical crystal.

15. The method of claim 13, further comprising: The first electromagnetic wave is polarized by a polarizer device within the first part of the laser device.

16. The method of claim 13, further comprising: A portion of the second electromagnetic wave is reflected via a beam splitter and after the second electromagnetic wave is emitted from the optical crystal, in a direction not parallel to the transmission path of the first electromagnetic wave.

17. The method according to claim 13, wherein, The first end of the optical crystal is close to the first portion. Wherein, the second end of the optical crystal is opposite to the first end, and The reflective film is configured to internally reflect the first electromagnetic wave from the second end and internally reflect the second electromagnetic wave.

18. A method of using a laser device, comprising: The laser device emits a second electromagnetic wave toward the object to be inspected. The laser device includes: The first portion of the laser device is configured to emit a first electromagnetic wave having a first wavelength; and A second part of the laser device includes an optical crystal configured to receive the first electromagnetic wave and, based on the reception of the first electromagnetic wave, emit a second electromagnetic wave having a second wavelength. The optical crystal includes: A first end has a thin-film coating disposed thereon, the thin-film coating being configured to support the emission of the second electromagnetic wave from the optical crystal and to support the internal reflection of the first electromagnetic wave within the optical crystal; and The second end includes two or more inclined surfaces, each having a reflective film disposed thereon, wherein the two or more inclined surfaces are formed at an angle symmetrical about a longitudinal axis parallel to the transmission path in the direction from the first portion to the second portion of the laser device; and A portion of the second electromagnetic wave is received after the second electromagnetic wave has been reflected or refracted from one or more surfaces of the object.

19. The method of claim 18, further comprising: An image of the object is analyzed based on receiving the second electromagnetic wave emitted by the laser device.

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