An artificial bandgap structure optical resonator, a method of making the same, and a laser

Abstract

This invention discloses an artificial bandgap optical resonator, its fabrication method, and a laser, relating to the field of laser technology. It solves the problems of high fabrication cost and complex processes in the existing topological artificial bandgap optical resonator fabrication methods for state manipulation. The optical resonator, from top to bottom, includes: a cladding structure, at least one first intercalation layer, a structural plate, at least one second intercalation layer, and a substrate. The thickness of the first and second intercalation layers is 1 / 20 to 1 / 4 of the thickness of the structural plate. The materials of the first and second intercalation layers are any one of gas, insulator, or semiconductor materials. By adding intercalation layers at the top and bottom of the artificial bandgap structure, the radiation of the artificial bandgap structure towards the top and bottom is controlled, realizing the generation, evolution (aggregation), splitting, and annihilation of integer topological charges. This effectively improves the control over the loss and optical modes of the optical resonator, with lower fabrication cost and relatively simple process.

Description

Technical Field

[0001] This invention relates to the field of laser technology, and in particular to an artificial bandgap structure optical resonator, its fabrication method, and a laser. Background Technology

[0002] Artificial bandgap resonant cavities possess photonic bandgap structures, and their photonic bandgap effect, band-edge modes, or flat-band modes offer advantages such as in-plane spontaneous emission, enhanced light-matter interaction, and in-plane light refraction and reflection. They are widely used in optical communication, medical, energy, and military fields, including various devices such as lasers, detectors, sensors, mirrors, optical waveguides, filters, beam splitters, optical switches, optical delayers, solar cells, and polarization controllers.

[0003] Traditional artificial bandgap optical resonators require large areas to address in-plane edge leakage, increasing fabrication costs. Furthermore, unavoidable fabrication imperfections lead to defect scattering, resulting in low quality factors. In recent years, topological artificial bandgap structures have emerged, exhibiting defect immunity and effectively suppressing non-radiative energy loss caused by scattering. Among these, the continuous-domain bound states carry integer topological charges, offering the advantage of flexible manipulation in momentum space: the aggregation of integer topological charges further enhances the suppression of out-of-plane scattering; and the manipulation of topological charges can achieve advantages such as unidirectional radiation, intrinsic chiral radiation, flat phase shift, and beam shifting. However, current manipulation of topological charges related to continuous-domain bound states relies on in-plane artificial bandgap structure geometric parameters or out-of-plane geometric symmetry, which increases lithography costs and requires complex fabrication processes.

[0004] It is evident that existing methods for controlling the state of optical resonators using topological artificial bandgap structures suffer from drawbacks such as high fabrication costs and complex processes. Summary of the Invention

[0005] This invention aims to address the problems of high fabrication cost and complex processes in the existing topological artificial bandgap optical resonator. By adding intercalation layers at the top and bottom of the artificial bandgap structure, this invention controls the radiation of the artificial bandgap structure toward the top and bottom, thereby realizing the generation, evolution (aggregation), splitting, and annihilation of integer topological charges. This effectively improves the control capability of loss and optical mode of the optical resonator, with lower fabrication cost and relatively simple process. It provides an artificial bandgap optical resonator with flexible and adjustable loss and optical mode.

[0006] To achieve the above objectives, the present invention specifically adopts the following technical solution:

[0007] An artificial bandgap optical resonator, comprising, from top to bottom: a cladding structure, at least one first intercalation layer, a structural plate, at least one second intercalation layer, and a substrate, wherein the thickness of the first intercalation layer and the second intercalation layer is 1 / 20 to 1 / 4 of the thickness of the structural plate, and the material of the first intercalation layer and the second intercalation layer is any one of gas, insulator, or semiconductor material.

[0008] Optionally, the structural plate is composed of a high refractive index component and a low refractive index component, wherein the high refractive index component is any one or more of a gas, an insulator, and a semiconductor material, and the low refractive index component is any one or more of a gas, an insulator, and a semiconductor material.

[0009] Optionally, the semiconductor material is any one elemental material or compound material from the III-V, II-VI, or IV groups, a transition metal chalcogenide material, or a perovskite material.

[0010] Optionally, the structural plate has multiple holes.

[0011] Optionally, the pattern of the hole can be one or more of the following: circle, ellipse, triangle, trapezoid, square, or rectangle.

[0012] Optionally, the maximum diameter or side length of the pattern on the structural plate is 150–600 nm.

[0013] Optionally, the lattice of the structure plate is one or more of a square lattice, a triangular lattice, a rectangular lattice, a centered rectangular lattice, or a parallelogram lattice, and the lattice constant is 300 to 1200 nm.

[0014] Optionally, the thickness of the structural plate is 250–700 nm.

[0015] The present invention also provides a method for fabricating an artificial bandgap structure optical resonator based on the above, comprising the following steps: sequentially epitaxially forming at least one second intercalation layer, a structural plate, at least one first intercalation layer, and a cladding structure on a substrate to obtain an artificial bandgap structure optical resonator.

[0016] The present invention also provides a laser based on an artificial bandgap structure optical resonator or an artificial bandgap structure optical resonator prepared by the above method.

[0017] Compared with the prior art, the advantages of the present invention are as follows:

[0018] 1. The artificial bandgap structure optical resonator involved in this invention, by setting at least one intercalation layer at both the top and bottom of the artificial bandgap structure optical resonator, can control the radiation of the artificial bandgap structure toward the top and the bottom, realize the generation, evolution (synthesis), splitting and annihilation of integer topological charges, thereby effectively improving the control capability of optical resonator loss and optical mode, while having low manufacturing cost and relatively simple process.

[0019] At least one intercalation layer is placed at the top and bottom of the artificial bandgap structure optical resonator, which can generate symmetry-protected continuous domain bound states and quasi-accidental continuous domain bound states on a single resonant band. In addition, near the anti-crossing characteristics of two coupled adjacent bands, quasi-Friedrich-Wintgen continuous domain bound states are generated. The entire process of generation, evolution, synthesis and annihilation of integer topological charges is realized through intercalation perturbation, which improves the quality factor and effectively reduces out-of-plane scattering.

[0020] Furthermore, by slowly changing the refractive index of the intercalation, it was found that the quasi-accidental continuous domain bound states approached the symmetry-protected continuous domain bound states, i.e., integer topological charge evolution; the quasi-Friedrich-Wintgen continuous domain bound states also approached the symmetry-protected continuous domain bound states, i.e., integer topological charge evolution; and the quasi-accidental continuous domain bound states and the quasi-Friedrich-Wintgen continuous domain bound states approached each other at a certain refractive index, resulting in the aggregation of integer topological charges. This significantly improved the quality factor over a large range in the momentum space of the artificial bandgap structure optical resonator involved in this invention. Subsequently, by continuing to slowly change the refractive index in the same trend, integer topological charge annihilation occurred according to the law of conservation of total topological charge.

[0021] Tunable volume Fermi arcs and singularity pairs can be observed in this system, accompanied by abrupt truncation of integer topological charge lines. Specifically, quasi-continuous bound state lines are found, and at accidental band crossings, these bound state lines are observed to be transmitted via volume Fermi arcs, accompanied by the generation of a pair of singularities.

[0022] The splitting of an integer topological charge into two half-integer topological charges and its modulation based on intercalation perturbations were observed in this system. An artificial bandgap structure optical resonator was realized, providing flexible tunability in loss and optical mode.

[0023] 2. The method for fabricating an artificial bandgap optical resonator involved in this invention is simple and has a low cost.

[0024] 3. The artificial bandgap structure optical resonator laser involved in this invention has a low threshold, large bandwidth, and high power, and the polarization, phase, and spatial distribution of the optical mode are flexibly controllable. Therefore, it can be applied to a wider range of applications. Attached Figure Description

[0025] Figure 1 This is a schematic diagram of an artificial bandgap optical resonator.

[0026] Figure 2 A schematic diagram of an artificial bandgap optical resonator structure with identical first and second intercalation layers added to both sides of the structural plate.

[0027] Figure 3 A partial structural diagram of an artificial bandgap structured optical resonator with different first and second intercalation layers added to both sides of the structural plate.

[0028] Figure 4 A partial structural diagram of an artificial bandgap structured optical resonator with multiple first intercalation layers added to one side of the structural plate and multiple second intercalation layers added to the other side.

[0029] Figure 5 A schematic diagram of the band structure for symmetry-protected continuous bound states and quasi-accidental continuous bound states.

[0030] Figure 6 Discrete polarization vector distribution diagrams for continuous-domain bound states and quasi-accidental continuous-domain bound states protected by symmetry.

[0031] Figure 7 A diagram showing the aggregation of continuous-domain bound states and quasi-accidental continuous-domain bound states to protect symmetry.

[0032] Figure 8 Quality factor distributions for the separation of continuous domain bound states and quasi-accidental continuous domain bound states for symmetry protection (a) and when they are aggregated (b).

[0033] Figure 9 A schematic diagram of the band structure for symmetry-protected continuous bound states and quasi-Friedrich-Wintgen continuous bound states.

[0034] Figure 10 Discrete polarization vector distribution diagrams for continuous-domain bound states and quasi-Friedrich-Wintgen continuous-domain bound states to protect symmetry.

[0035] Figure 11 To protect symmetry, the continuous domain bound states and quasi-Friedrich-Wintgen continuous domain bound states are aggregated in the lower branch diagram.

[0036] Figure 12 To protect symmetry, the continuous domain bound states and quasi-Friedrich-Wintgen continuous domain bound states are aggregated in the upper branch diagram.

[0037] Figure 13The quality factor distribution diagram when symmetry-preserving continuous domain bound states and quasi-Friedrich-Wintgen continuous domain bound states are aggregated.

[0038] Figure 14 This is a schematic diagram of the far-field polarization vector distribution of the two half-integer topological charges generated by splitting integer topological charges.

[0039] Figure description: 1-cladding structure, 2-first intercalation layer, 3-structural plate, 4-second intercalation layer, 5-substrate.

[0040] Figures 5 to 14 In the middle, k x a / 2π is the x-component of the in-plane wave vector, k y a / 2π is the y-component of the in-plane wave vector, and M-Γ-X[ka / 2π] is the wave vector from the Brillouin zone center (Γ) to point X in the reciprocal lattice (momentum) space.

[0041] Friedrich-Wintgen type continuous field bound states are specific terms in this field.

[0042] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are some embodiments of the present invention, but not all embodiments.

[0043] Therefore, the following detailed description of the embodiments of the present invention is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention. Detailed Implementation

[0044] Please see Figure 1 An artificial bandgap optical resonator, comprising, from top to bottom: a cladding structure, at least one first intercalation layer, a structural plate, at least one second intercalation layer, and a substrate, wherein the thickness of the first intercalation layer and the second intercalation layer is 1 / 20 to 1 / 4 of the thickness of the structural plate, and the material of the first intercalation layer and the second intercalation layer is any one of gas, insulator or semiconductor material.

[0045] It is understood that by setting at least one intercalation layer at the top and bottom of the artificial bandgap structure optical resonator and performing intercalation perturbation (slowly changing the thickness or refractive index of the intercalation layer), the present invention can control the radiation of the artificial bandgap structure toward the top and bottom, realize the generation, evolution (synthesis), splitting and annihilation of integer topological charges, thereby effectively improving the control of optical resonator loss and optical mode. The fabrication cost is low and the process is relatively simple.

[0046] Specifically, at least one intercalation layer is set at the top and bottom of the artificial bandgap structure optical resonator, which can generate symmetry-protected continuous domain bound states and quasi-accidental continuous domain bound states on a single resonant energy band. In addition, near the anti-crossing characteristics of two coupled adjacent energy bands, quasi-Friedrich-Wintgen continuous domain bound states are generated. The entire process of generation, evolution, synthesis and annihilation of integer topological charges is realized through intercalation perturbation.

[0047] Furthermore, by slowly changing the refractive index of the intercalation, it was found that the quasi-accidental continuous domain bound states approached the symmetry-protected continuous domain bound states, i.e., integer topological charge evolution; the quasi-Friedrich-Wintgen continuous domain bound states also approached the symmetry-protected continuous domain bound states, i.e., integer topological charge evolution; and the quasi-accidental continuous domain bound states and the quasi-Friedrich-Wintgen continuous domain bound states approached each other. At a certain refractive index, integer topological charges converged, and the quality factor in the momentum space of the artificial bandgap structure optical resonator involved in this invention was significantly improved over a large range. Subsequently, by continuing to slowly change the refractive index in the same trend, integer topological charge annihilation could occur according to the law of conservation of the total number of topological charges.

[0048] Furthermore, by placing at least one intercalation layer at both the top and bottom of the artificial bandgap structured optical resonator, this invention enables the observation of tunable bulk Fermi arcs and singularity pairs within the system, accompanied by the abrupt truncation and propagation of integer topological charge lines. Specifically, quasi-continuous bound state lines are discovered, and at accidental bandgap crossings, these bound state lines are observed to propagate via bulk Fermi arcs, accompanied by the generation of a pair of singularities.

[0049] The splitting of an integer topological charge into two half-integer topological charges and its modulation based on intercalation perturbations were observed in this system. An artificial bandgap structure optical resonator was realized, providing flexible tunability in loss and optical mode.

[0050] It should be noted that, in different embodiments, depending on actual needs, the optical resonant cavity may also include an active layer, a carrier blocking layer, and other layers. It is understood that the active layer is made of III-V group ternary or quaternary compound semiconductor materials.

[0051] Specifically, in some embodiments of the present invention, the optical resonant cavity includes, from top to bottom: a cladding structure, a first intercalation layer, a structural plate, a second intercalation layer, and a substrate. The thickness of the first intercalation layer and the second intercalation layer is 1 / 20 to 1 / 4 of the thickness of the structural plate. The first intercalation layer and the second intercalation layer may be made of the same or different materials.

[0052] In some embodiments of the present invention, the cladding structure may be any one of a gas, liquid, insulator or semiconductor material.

[0053] In some embodiments of the present invention, the substrate is one of GaAs substrate, InP substrate, SiN substrate, and GaN substrate.

[0054] In some embodiments of the present invention, the structural plate is composed of a high refractive index component and a low refractive index component, wherein the high refractive index component is any one or more of a gas, an insulator, and a semiconductor material, and the low refractive index component is any one or more of a gas, an insulator, and a semiconductor material.

[0055] In some embodiments of the present invention, the semiconductor material is any elemental material or compound material of group III-V, group II-VI or group IV, transition metal chalcogenide material or perovskite material.

[0056] In some embodiments of the present invention, the semiconductor material is one or more of the group consisting of Si, Ge, BN, SiN, AlN, GaN, GaP, GaAs, AlAs, InAs, InSb, AlSb, InP, GaInP, InGaAs, AlGaAs, AlGaN, GaAsP, InAlGaN, or InGaAsP, as well as novel semiconductor materials such as transition metal chalcogenides, perovskites, etc.

[0057] It should be noted that the artificial bandgap structure plate has a substrate at the bottom and a cladding at the top. When the substrate and cladding are the same, it is considered a symmetrical dielectric environment; when the substrate and cladding are different, it is considered an asymmetrical dielectric environment. The materials of the substrate and cladding can be gases, liquids, insulators, or semiconductor materials. This invention is applicable to both symmetrical and asymmetrical dielectric environments, and has a wide range of applications.

[0058] In some embodiments of the present invention, the structural plate is provided with a plurality of holes.

[0059] In some embodiments of the present invention, the pattern of the hole is one or more of the following: circular, elliptical, triangular, trapezoidal, square, or rectangular. The pattern of the hole is preferably circular.

[0060] In some embodiments of the present invention, the maximum diameter or side length of the pattern on the structural plate is 150–600 nm. Preferably, the maximum diameter or side length of the pattern on the structural plate is 150 nm.

[0061] In some embodiments of the present invention, the number of pattern cycles is greater than or equal to 15.

[0062] In some embodiments of the present invention, the crystal lattice of the structural plate is one or more of a square lattice, a triangular lattice, a rectangular lattice, a centered rectangular lattice, or a parallelogram lattice, and the lattice constant is 300–1200 nm. Preferably, the crystal lattice of the structural plate is a square lattice, and the lattice constant is preferably 300 nm.

[0063] In some embodiments of the present invention, the thickness of the structural plate is 250–700 nm. Preferably, the thickness of the structural plate is 250 nm.

[0064] In some embodiments of the present invention, the operating wavelength of the structural plate is between 700 and 1600 nm.

[0065] It is understood that by setting several holes on the structural plate and limiting their pattern shape, size, and lattice properties, the present invention can effectively control the loss and optical mode of the artificial bandgap structure optical resonator.

[0066] In some other embodiments, please refer to Figure 2 The optical resonant cavity includes a first intercalation layer and a second intercalation layer, and the first and second intercalation layers are made of the same material. The structural plate is a square lattice artificial bandgap structural plate with a circular hole pattern. Identical first and second intercalation layers are added between the plate and the cladding layer and between the plate and the substrate, respectively, to generate symmetry-protected continuous domain bound states and quasi-accidental continuous domain bound states in the single resonant band. In addition, quasi-Friedrich-Wintgen continuous domain bound states are generated near the anti-crossing characteristics of two adjacent coupled bands.

[0067] By slowly changing the refractive index of the intercalation, it was observed that the quasi-accidental continuous bound states approached the symmetry-protected continuous bound states, i.e., integer topological charge evolution; the quasi-Friedrich-Wintgen continuous bound states also approached the symmetry-protected continuous bound states, i.e., integer topological charge evolution; and the quasi-accidental continuous bound states and the quasi-Friedrich-Wintgen continuous bound states approached each other. At a certain refractive index, integer topological charges were synthesized, and a significant increase in the quality factor over a large range in momentum space was observed. Subsequently, continuing to slowly change the refractive index in the same trend, integer topological charge annihilation occurred according to the law of conservation of total topological charge. In addition, quasi-continuous bound state lines were observed, and at the location of abrupt band crossings, these quasi-continuous bound state lines were observed to be transmitted via volume Fermi arcs, accompanied by the generation of a pair of singularities.

[0068] In some other embodiments, please refer to Figure 3 The optical resonant cavity includes a first intercalation layer and a second intercalation layer, with the first and second intercalation layers made of different materials. The structural plate is a square lattice artificial bandgap structure with a circular hole pattern. Adding first and second intercalation layers of different materials between the plate and the cladding, and between the plate and the substrate, respectively, causes the integer topological charge carried by the quasi-accidental continuous domain bound states to split, resulting in two half-integer topological charges. Exchanging the upper and lower intercalation layers does not significantly alter the phenomenon. However, the integer topological charge carried by the quasi-Friedrich-Wintgen continuous domain bound states does not split, but its position in momentum space is sensitive to the intercalation exchange response.

[0069] In other embodiments, please refer to Figure 4 The optical resonant cavity comprises multiple first intercalation layers and multiple second intercalation layers, wherein the first and second intercalation layers are made of the same or different materials. The structural plate is a cubic lattice artificial bandgap structure plate with a circular hole pattern. Multiple first intercalation layers and multiple second intercalation layers are added between the artificial bandgap structure plate and the cladding, and between the artificial bandgap structure plate and the substrate, respectively, with identical composition on both sides. This allows for independent control of half of the topological charges and unidirectional radiation continuous-domain bound states.

[0070] The present invention also provides a method for fabricating an artificial bandgap structure optical resonator based on the above, comprising the following steps: sequentially epitaxially forming at least one second intercalation layer, a structural plate, at least one first intercalation layer, and a cladding structure on a substrate to obtain an artificial bandgap structure optical resonator.

[0071] In some embodiments of the present invention, the epitaxial method may employ metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) to perform epitaxy or secondary epitaxy on each layer, and photolithography may be performed on the structural layer using electron beam lithography or deep reactive ion etching.

[0072] It is understood that the method for fabricating an artificial bandgap optical resonator involved in this invention is simple and has a low cost.

[0073] The present invention also provides a laser based on an artificial bandgap structure optical resonator or an artificial bandgap structure optical resonator prepared by the above method.

[0074] It is understood that the artificial bandgap structured optical resonator laser involved in this invention has a low threshold, large bandwidth, high power, and flexible and controllable polarization, phase, and spatial distribution of optical modes. Therefore, it can be applied to a wider range of applications.

[0075] Example 1

[0076] An artificial bandgap optical resonator 1, comprising, from top to bottom: a cladding structure, a first intercalation layer, a structural plate, a second intercalation layer, and a substrate. The thickness of the first and second intercalation layers is 1 / 20th of the thickness of the structural plate, and both the first and second intercalation layers are made of AlN. The structural plate is made of a transition metal chalcogenide material and has multiple holes. The hole pattern is circular. The maximum diameter or side length of the pattern on the structural plate is 300 nm. The lattice of the structural plate is a triangular lattice and a parallelogram lattice, with a lattice constant of 400 nm. The thickness of the structural plate is 300 nm.

[0077] Example 2

[0078] An artificial bandgap optical resonator 2 comprises, from top to bottom: a cladding structure, a first intercalation layer, a structural plate, a second intercalation layer, and a substrate. The thickness of the first and second intercalation layers is 1 / 16 of the thickness of the structural plate. The first intercalation layer is made of InGaAs, and the second intercalation layer is made of Si. The structural plate is made of a transition metal chalcogenide material and has multiple holes. The hole patterns are circular and elliptical. The maximum diameter or side length of the pattern on the structural plate is 400 nm. The lattice of the structural plate is a square lattice with a lattice constant of 300 nm. The thickness of the structural plate is 250 nm.

[0079] Example 3

[0080] An artificial bandgap optical resonator 3, from top to bottom, comprises: a cladding structure, a first intercalation layer, a structural plate, two second intercalation layers, and a substrate. The thickness of the first and second intercalation layers is 1 / 15 of the thickness of the structural plate, and both the first and second intercalation layers are made of SiN. The structural plate is made of a transition metal chalcogenide material and has multiple holes. The pattern of the holes is circular. The maximum diameter or side length of the pattern on the structural plate is 150 nm. The lattice of the structural plate is a square lattice with a lattice constant of 300 nm. The thickness of the structural plate is 250 nm.

[0081] Example 4

[0082] An artificial bandgap optical resonator 4 comprises, from top to bottom: a cladding structure, a first intercalation layer, a structural plate, a second intercalation layer, and a substrate. The thickness of the first and second intercalation layers is 1 / 4 of the thickness of the structural plate, and both the first and second intercalation layers are made of Ge. The structural plate is made of perovskite and has multiple holes. The hole patterns are elliptical or triangular. The maximum diameter or side length of the pattern on the structural plate is 360 nm. The lattice of the structural plate is a triangular lattice or a parallelogram lattice, with a lattice constant of 400 nm. The thickness of the structural plate is 400 nm.

[0083] Example 5

[0084] An artificial bandgap optical resonator 5 comprises, from top to bottom: a cladding structure, a first intercalation layer, a structural plate, a second intercalation layer, and a substrate. The thickness of the first and second intercalation layers is 1 / 17 of the thickness of the structural plate. The first intercalation layer is made of InP, and the second intercalation layer is made of Si. The structural plate is made of a transition metal chalcogenide material and has multiple holes. The hole patterns are circular and elliptical. The maximum diameter or side length of the pattern on the structural plate is 400 nm. The lattice of the structural plate is a square lattice with a lattice constant of 300 nm. The thickness of the structural plate is 450 nm.

[0085] Example 6

[0086] An artificial bandgap optical resonator 6 comprises, from top to bottom: a cladding structure, a first intercalation layer, a structural plate, a second intercalation layer, and a substrate. The thickness of the first and second intercalation layers is 1 / 17 of the thickness of the structural plate. The first intercalation layer is made of InGaAs, and the second intercalation layer is made of BN. The structural plate is made of a transition metal chalcogenide material and has multiple holes. The hole patterns are circular and elliptical. The maximum diameter or side length of the pattern on the structural plate is 500 nm. The lattice of the structural plate is a square lattice with a lattice constant of 300 nm. The thickness of the structural plate is 350 nm.

[0087] Example 7

[0088] An artificial bandgap optical resonator 7 comprises, from top to bottom: a cladding structure, a first intercalation layer, a structural plate, three second intercalation layers, and a substrate. The thickness of the first and second intercalation layers is 1 / 16 of the thickness of the structural plate, and both the first and second intercalation layers are made of InGaAs. The structural plate is made of a transition metal chalcogenide material and has multiple holes. The pattern of the holes is circular. The maximum diameter or side length of the pattern on the structural plate is 150 nm. The lattice of the structural plate is a square lattice with a lattice constant of 300 nm. The thickness of the structural plate is 320 nm.

[0089] Example 8

[0090] An artificial bandgap optical resonator 8 comprises, from top to bottom: a cladding structure, a first intercalation layer, a structural plate, two second intercalation layers, and a substrate. The thickness of the first and second intercalation layers is 1 / 15 of the thickness of the structural plate. Both the first and second intercalation layers are made of GaP. The structural plate is made of a transition metal chalcogenide material and has multiple holes. The hole pattern is circular. The maximum diameter or side length of the pattern on the structural plate is 450 nm. The lattice of the structural plate is a square lattice with a lattice constant of 600 nm. The thickness of the structural plate is 350 nm.

[0091] Example 9

[0092] An artificial bandgap optical resonator 9 comprises, from top to bottom: a cladding structure, a first intercalation layer, a structural plate, a second intercalation layer, and a substrate. The thickness of the first and second intercalation layers is 1 / 16 of the thickness of the structural plate. The first intercalation layer is made of GaAsP, and the second intercalation layer is made of Si. The structural plate is made of a transition metal chalcogenide material and has multiple holes. The hole patterns are circular and elliptical. The maximum diameter or side length of the pattern on the structural plate is 420 nm. The lattice of the structural plate is a square lattice with a lattice constant of 600 nm. The thickness of the structural plate is 278 nm.

[0093] Experimental Example 1. Analysis of far-field polarization vector distribution and quality factor distribution of the artificial bandgap structure optical resonator of the present invention.

[0094] 1.1 Experimental Design

[0095] The artificial bandgap optical resonator involved in the embodiments was selected, and its far-field polarization vector distribution and quality factor distribution were analyzed. The analysis results are shown in [the table below]. Figure 5-14 .

[0096] 1.2 Results Analysis

[0097] See Figure 5 visible,( Figure 5 In the reciprocal lattice (momentum) space, M-Γ-X[Ka / 2π] represents the wave vector from the Brillouin zone center (Γ) to X. On the second energy band (dark energy band), one symmetry-protected continuous bound state and eight quasi-accidental continuous bound states can be observed.

[0098] Through intercalation perturbation, ( Figure 6-14 In the middle, K x a / 2π is the x-component of the in-plane wave vector, K y (a / 2π is the y-component of the in-plane wave vector) See [link / reference] Figure 6 As can be seen, when discrete, observing its far-field polarization vector distribution reveals one symmetry-protected continuous-domain bound state and eight quasi-accidental continuous-domain bound states; see [link to relevant documentation]. Figure 7 As can be seen, during aggregation, the distribution of its far-field polarization vector can be observed. Figure 8 It can be seen that aggregation ( Figure 8 (a) is more discrete ( Figure 8 (b)) The intuitive result is that the range of high quality factors in momentum space is greatly increased. It can be seen that out-of-plane scattering caused by imperfect preparation can be suppressed by intercalation perturbation.

[0099] See Figure 9The dark solid and dashed lines represent two energy bands that cross and couple with each other on Γ-X. A quasi-Friedrich-Wintgen continuous bound state is observed to be generated. Depending on the coupling strength, it may appear in the lower or upper branch. At the same time, each of the two energy bands has a symmetry-protected continuous bound state.

[0100] Through intercalation perturbation, see Figure 10 When discrete, its far-field polarization vector distribution consists of one symmetry-protected continuous-domain bound state and four quasi-Friedrich-Wintgen continuous-domain bound states; when aggregated, see [reference needed]. Figure 10 or Figure 12 Its far-field polarization vector distribution Figure 11 The convergence of bound states in the quasi-Friedrich-Wintgen continuous domain occurs in the lower branch, while Figure 12 This indicates the aggregation of quasi-Friedrich-Wintgen continuous domain bound states when they appear in the upper branch.

[0101] See Figure 8 (b) and Figure 13 It is evident that the aggregation effect of one symmetry-protected continuous bound state and four quasi-Friedrich-Wintgen continuous bound states is better than that of one symmetry-protected continuous bound state and eight quasi-accidental continuous bound states. This is due to the contribution of the quasi-continuous bound state line on Γ-M.

[0102] See Figure 14 As can be seen, this invention splits one integer topological charge into two half-integer topological charges, accompanied by a pair of circularly polarized singularities (Cpoint) and linearly polarized singularity lines (Lline). Therefore, this invention can generate all three types of polarization singularities and achieve novel state manipulation related to singularity optics.

[0103] In summary, the artificial bandgap structure optical resonator of this invention, by setting at least one intercalation layer at both the top and bottom of the artificial bandgap structure optical resonator, can control the radiation of the artificial bandgap structure toward the top and bottom, and realize the generation, evolution (aggregation), splitting and annihilation of integer topological charges, thereby effectively improving the control of optical resonator loss and optical mode, with low manufacturing cost and relatively simple process.

[0104] The above embodiments are merely one implementation of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this patent should be determined by the appended claims.

Claims

1. An artificial bandgap optical resonator, characterized in that, The optical resonant cavity comprises, from top to bottom: a cladding structure, at least one first intercalation layer, a structural plate, at least one second intercalation layer, and a substrate. The thickness of the first and second intercalation layers is 1 / 20 to 1 / 4 of the thickness of the structural plate. The material of the first and second intercalation layers is any one of gas, insulator, or semiconductor material. The structural plate is composed of a high-refractive-index component and a low-refractive-index component, and the structural plate has multiple holes. The lattice of the structural plate is one or more of a square lattice, a triangular lattice, a rectangular lattice, a centered rectangular lattice, or a parallelogram lattice.

2. The artificial bandgap optical resonator according to claim 1, characterized in that, The high refractive index component is any one or more of a gas, an insulator, and a semiconductor material, and the low refractive index component is any one or more of a gas, an insulator, and a semiconductor material.

3. The artificial bandgap optical resonator according to claim 2, characterized in that, The semiconductor material is any elemental material or compound material from the III-V, II-VI, or IV groups, a transition metal chalcogenide material, or a perovskite material.

4. The artificial bandgap optical resonator according to claim 1, characterized in that, The pattern of the hole is one or more of the following: circle, ellipse, triangle, trapezoid, square or rectangle.

5. The artificial bandgap optical resonator according to claim 1, characterized in that, The maximum diameter or side length of the pattern on the structural plate is 150~600 nm.

6. The artificial bandgap optical resonator according to claim 1, characterized in that, The lattice constant of the structure plate is 300~1200 nm.

7. The artificial bandgap optical resonator according to claim 1, characterized in that, The thickness of the structural plate is 250~700 nm.

8. A method for fabricating an artificial bandgap optical resonator according to any one of claims 1 to 7, characterized in that, Includes the following steps: An artificial bandgap optical resonator is obtained by sequentially epitaxially extending at least one second intercalation layer, a structural plate, at least one first intercalation layer, and a cladding structure on a substrate.

9. A laser based on any one of claims 1 to 7 or prepared by claim 8, using an artificial bandgap structure optical resonator.

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