Memory device and method of manufacturing the same

CN115867030BActive Publication Date: 2026-10-27SK HYNIX INC
View PDF 2 Cites 0 Cited by

Patent Information

Application Number
CN202210491049.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2021-09-24
Filing Date
2022-05-07
Publication Date
2026-10-27
Estimated Expiration
2042-05-07

Smart Images

  • Figure CN115867030B_ABST
    Figure CN115867030B_ABST
Patent Text Reader

Abstract

Memory devices and methods of manufacturing the same are disclosed. A memory device includes a source layer having a cell region and a peripheral circuit region defined thereon, a memory block formed on the source layer in the cell region, and a slit formed between the memory blocks. The memory device further includes a resistor formed in the source layer in the peripheral circuit region, a contact formed on the resistor, and a metal line formed on the contact and connected to a peripheral circuit.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Waveguide filter with asymmetrical coupling

    KR1020210126340A

  • Semiconductor device and method of manufacturing the semiconductor device

    CN113113420A