Metalized film capacitor self-healing characteristic monitoring method based on ultra-high frequency electromagnetic signals

CN115877112BActive Publication Date: 2026-10-23XI AN JIAOTONG UNIV
View PDF 2 Cites 0 Cited by

Patent Information

Application Number
CN202211734472.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-12-30
Publication Date
2026-10-23
Estimated Expiration
2042-12-30

AI Technical Summary

Technical Problem

[0004]然而,相关技术中,金属化膜电容器的自愈特征存在难以监测的问题

Benefits of technology

[0032]上述基于特高频电磁信号的金属化膜电容器自愈特征监测方法,通过安装在待测金属化膜电容器上的高频电磁信号传感器,获取待测金属化膜电容器在预设时间段内产生的多个高频电磁信号,根据多个高频电磁信号,确定待测金属化膜电容器的自愈特征监测结果;高频电磁信号为待测金属化膜电容器发生自愈时产生的,且每发生一次自愈对应产生一个高频电磁信号。该方法中,通过布置非接触式的电磁传感器,在不改变待测金属化膜电容器运行回路的情况下,就能够采集待测金属化膜电容器产生的高频电磁信号,并根据高频电磁信号确定待测金属化膜电容器的自愈特征监测结果,该方法在不改变待测金属化膜电容器运行回路的情况下,用更少的监测设备就能够实现待测金属化膜电容器的精确监测,并且,不采用额外设备仅使用电磁传感器,成本较低。

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN115877112B_ABST
    Figure CN115877112B_ABST
Patent Text Reader

Abstract

The application relates to a metalized film capacitor self-healing characteristic monitoring method based on ultrahigh frequency electromagnetic signals. The method comprises the following steps: acquiring multiple high-frequency electromagnetic signals generated by a to-be-detected metalized film capacitor in a preset time period through a high-frequency electromagnetic signal sensor installed on the to-be-detected metalized film capacitor, and determining a self-healing characteristic monitoring result of the to-be-detected metalized film capacitor according to the multiple high-frequency electromagnetic signals; the high-frequency electromagnetic signal is generated when the to-be-detected metalized film capacitor occurs self-healing, and one high-frequency electromagnetic signal is generated once self-healing occurs. In the method, the accurate monitoring of the to-be-detected metalized film capacitor can be realized by using fewer monitoring devices without changing the operation loop of the to-be-detected metalized film capacitor, and the cost is reduced.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] This application relates to the field of performance testing technology, and in particular to a method for monitoring the self-healing characteristics of metallized film capacitors based on ultra-high frequency electromagnetic signals. Background Technology

[0002] During operation, under the influence of complex electrothermal stress, the weak points and impurities in the metallized film inside the capacitor will break down. Due to the Joule effect, the metal layer near the breakdown point will melt and evaporate rapidly. As the evaporation area of ​​the metal layer expands, the discharge arc is cut off, and the weak area is restored to insulation. This is called the self-healing of the metallized film capacitor, which makes the metallized film capacitor have good operational stability.

[0003] In power transmission systems, metallized film capacitors that have been in operation for a long time will repeatedly undergo self-healing. With each self-healing cycle, the capacitance of the metallized film capacitor will slowly decrease, and the capacitor will gradually age. To ensure the safe and reliable operation of the system, it is necessary to replace capacitors that have reached the end of their lifespan in a timely manner. Therefore, it is necessary to monitor the self-healing characteristics of metallized film capacitors to facilitate the timely replacement of aging capacitors.

[0004] However, in related technologies, the self-healing characteristics of metallized film capacitors are difficult to monitor. Summary of the Invention

[0005] Therefore, it is necessary to provide a method for monitoring the self-healing characteristics of metallized film capacitors based on ultra-high frequency electromagnetic signals, which can monitor the self-healing characteristics of capacitors in a simple and low-cost manner to address the above-mentioned technical problems.

[0006] In a first aspect, this application provides a method for monitoring the self-healing characteristics of a metallized film capacitor, the method comprising:

[0007] A high-frequency electromagnetic signal sensor installed on the metallized film capacitor under test acquires multiple high-frequency electromagnetic signals generated by the metallized film capacitor under test within a preset time period; the high-frequency electromagnetic signals are generated when the metallized film capacitor under test undergoes self-healing, and each self-healing corresponds to the generation of one high-frequency electromagnetic signal.

[0008] The self-healing characteristics monitoring results of the metallized film capacitor under test were determined based on multiple high-frequency electromagnetic signals.

[0009] In one embodiment, the self-healing characteristic monitoring results of the metallized film capacitor under test are determined based on multiple high-frequency electromagnetic signals, including:

[0010] Based on multiple high-frequency electromagnetic signals, the self-healing characteristics and changes in self-healing characteristics of the metallized film capacitor under test are obtained within a preset time period.

[0011] Based on the self-healing characteristics and changes in self-healing characteristics, the monitoring results of the self-healing characteristics of the metallized film capacitor under test are determined.

[0012] In one embodiment, the self-healing characteristic includes the number of self-healing cycles. The self-healing characteristic of the metallized film capacitor under test is determined based on multiple high-frequency electromagnetic signals within a preset time period, including:

[0013] Count the number of multiple high-frequency electromagnetic signals;

[0014] Based on the correspondence between the number of high-frequency electromagnetic signals and the number of pulse currents, the number of self-healing times of the metallized film capacitor under test within a preset time period is determined.

[0015] In one embodiment, the self-healing feature includes self-healing energy; the self-healing feature of the metallized film capacitor under test within a preset time period is obtained based on multiple high-frequency electromagnetic signals, including:

[0016] Determine the frequency domain energy corresponding to each high-frequency electromagnetic signal based on each high-frequency electromagnetic signal.

[0017] Based on the correspondence between the frequency domain energy of the high-frequency electromagnetic signal and the self-healing energy of the pulse current, the self-healing energy generated by the metallized film capacitor under test during each self-healing within a preset time period is obtained; the frequency domain energy of the high-frequency electromagnetic signal can reflect the self-healing energy generated when the metallized film capacitor under test undergoes self-healing.

[0018] In one embodiment, the self-healing characteristic changes of the metallized film capacitor under test within a preset time period are obtained based on multiple high-frequency electromagnetic signals, including:

[0019] Based on each high-frequency electromagnetic signal, determine the characteristic changes of each high-frequency electromagnetic signal;

[0020] Based on the characteristic changes of each high-frequency electromagnetic signal, the self-healing characteristic changes of the metallized film capacitor under test within a preset time period are determined.

[0021] In one embodiment, determining the characteristic changes of each high-frequency electromagnetic signal based on each high-frequency electromagnetic signal includes:

[0022] Each high-frequency electromagnetic signal was processed by signal transformation to obtain multiple frequency domain spectra.

[0023] Based on the energy distribution of each frequency domain spectrum, the characteristic changes of each high-frequency electromagnetic signal are determined.

[0024] In one embodiment, determining the characteristic changes of each high-frequency electromagnetic signal based on each high-frequency electromagnetic signal includes:

[0025] Based on each high-frequency electromagnetic signal, determine the time-domain characteristic changes of each high-frequency electromagnetic signal.

[0026] Secondly, this application also provides a device for monitoring the self-healing characteristics of a metallized film capacitor, the device comprising:

[0027] The acquisition module is used to acquire multiple high-frequency electromagnetic signals generated by the metallized film capacitor under test within a preset time period through a high-frequency electromagnetic signal sensor installed on the metallized film capacitor under test; the high-frequency electromagnetic signals are generated when the metallized film capacitor under test undergoes self-healing, and one high-frequency electromagnetic signal is generated for each self-healing.

[0028] The determination module is used to determine the self-healing characteristic monitoring results of the metallized film capacitor under test based on multiple high-frequency electromagnetic signals.

[0029] Thirdly, embodiments of this application provide a computer device including a memory and a processor. The memory stores a computer program, and the processor executes the computer program to implement the steps of the method provided in any of the embodiments of the first aspect described above.

[0030] Fourthly, embodiments of this application provide a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the method provided in any of the embodiments of the first aspect described above.

[0031] Fifthly, embodiments of this application also provide a computer program product, including a computer program that, when executed by a processor, implements the steps of the method provided in any of the embodiments of the first aspect described above.

[0032] The aforementioned method for monitoring the self-healing characteristics of metallized film capacitors based on ultra-high frequency electromagnetic signals acquires multiple high-frequency electromagnetic signals generated by the metallized film capacitor under test within a preset time period using a high-frequency electromagnetic signal sensor installed on the capacitor. Based on these signals, the self-healing characteristic monitoring result of the capacitor is determined. The high-frequency electromagnetic signals are generated when the capacitor undergoes self-healing, with one signal generated for each instance of self-healing. This method, by deploying non-contact electromagnetic sensors, can acquire the high-frequency electromagnetic signals generated by the capacitor under test without altering its operating circuit. The self-healing characteristic monitoring result is then determined based on these signals. This method achieves accurate monitoring of the capacitor under test with fewer monitoring devices without changing its operating circuit, and its low cost stems from using only electromagnetic sensors and no additional equipment. Attached Figure Description

[0033] Figure 1 This is an application environment diagram of a method for monitoring the self-healing characteristics of a metallized film capacitor in one embodiment.

[0034] Figure 2 This is a flowchart illustrating a method for monitoring the self-healing characteristics of a metallized film capacitor in one embodiment.

[0035] Figure 3 This is a schematic diagram of the self-healing monitoring platform in one embodiment;

[0036] Figure 4a This is a schematic diagram of the simulation results of a method for monitoring the self-healing characteristics of a metallized film capacitor in one embodiment;

[0037] Figure 4b This is a schematic diagram of the simulation results of the self-healing feature monitoring method for metallized film capacitors in another embodiment;

[0038] Figure 5a This is a schematic diagram of the simulation results of the self-healing feature monitoring method for metallized film capacitors in another embodiment;

[0039] Figure 5b This is a schematic diagram of the simulation results of the self-healing feature monitoring method for metallized film capacitors in another embodiment;

[0040] Figure 6 This is a flowchart illustrating a method for monitoring the self-healing characteristics of a metallized film capacitor in another embodiment.

[0041] Figure 7 This is a structural block diagram of a self-healing feature monitoring device for a metallized film capacitor in one embodiment.

[0042] Figure 8 This is an internal structural diagram of a computer device in one embodiment. Detailed Implementation

[0043] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0044] The self-healing feature monitoring method for metallized film capacitors provided in this application embodiment can be applied to, for example... Figure 1 In the application environment shown, the high-frequency electromagnetic signal sensor 102 communicates with the server 104 via a network. The data storage system can store the data that the server 104 needs to process. The data storage system can be integrated onto the server 104, or it can be located in the cloud or on another network server.

[0045] Among them, the high-frequency electromagnetic signal sensor 102 is a sensor capable of sensing high-frequency electromagnetic signals. The server 104 can be implemented using a standalone server or a server cluster composed of multiple servers.

[0046] Since the self-healing process of metallized film capacitors occurs inside the capacitor, the self-healing signal is difficult to capture and acquire. It usually requires the design of a complex circulating current circuit to obtain the pulse current signal.

[0047] However, the pulse current method based on the parallel loop circulating current signal requires the addition of additional equipment to the capacitor self-healing test circuit, such as adding a large-capacity capacitor in parallel with the metallized film capacitor under test, so as to form a detectable circulating current signal in the circuit when self-healing occurs.

[0048] This method involves a complex measurement circuit, requiring additional equipment such as parallel capacitors, current sensors, and current signal amplifiers. The equipment arrangement is complicated, and the measurement cost is high. It is not conducive to the monitoring of self-healing signals of metallized film capacitors, and in particular, it cannot be applied to the self-healing monitoring of capacitors in actual operation of flexible DC transmission systems.

[0049] Furthermore, since metallized film capacitors are prone to continuous self-healing under complex stress, the pulse current obtained by the pulse current method based on the parallel loop circulating current signal may overlap, making it difficult to determine the actual number of self-healing times and the magnitude of self-healing energy of the capacitor, thus making it impossible to accurately monitor the self-healing of the capacitor.

[0050] Based on this, this application provides a method for monitoring the self-healing characteristics of metallized film capacitors based on ultra-high frequency electromagnetic signals. This method can quickly and effectively monitor the internal self-healing of the metallized film capacitor under test without adding an extra circuit, thus realizing the self-healing monitoring of the metallized film capacitor under test.

[0051] In one embodiment, such as Figure 2 As shown, a method for monitoring the self-healing characteristics of a metallized film capacitor is provided, comprising the following steps:

[0052] S201, by using a high-frequency electromagnetic signal sensor installed on the metallized film capacitor under test, multiple high-frequency electromagnetic signals generated by the metallized film capacitor under test within a preset time period are acquired; the high-frequency electromagnetic signals are generated when the metallized film capacitor under test undergoes self-healing, and each self-healing corresponds to the generation of one high-frequency electromagnetic signal.

[0053] Among them, the metallized film capacitor is made of a double-layer polypropylene film coated with a metal layer and wound together.

[0054] When the metallized film capacitor under test undergoes self-healing, it can generate a high-frequency electromagnetic signal. By installing a high-frequency electromagnetic signal sensor on the metallized film capacitor under test, the high-frequency electromagnetic signal generated when the metallized film capacitor under test undergoes self-healing can be collected. The high-frequency electromagnetic signal is a signal in a specific frequency band.

[0055] Optionally, the high-frequency electromagnetic signal is an ultra-high frequency electromagnetic signal with a bandwidth of 300-1500MHz, and correspondingly, the high-frequency electromagnetic signal sensor is an ultra-high frequency electromagnetic signal sensor.

[0056] Specifically, an ultra-high frequency electromagnetic signal sensor is installed on the metallized film capacitor under test, and then the high frequency electromagnetic signal generated by the metallized film capacitor under test each time self-healing occurs within a preset time period is acquired. The acquired high frequency electromagnetic signal is the ultra-high frequency electromagnetic signal.

[0057] It should be noted that the high-frequency electromagnetic signal sensor is installed on the metallized film capacitor under test, but it is not in direct contact with the metallized film capacitor under test. Instead, it is installed at a position that can sense the ultra-high frequency electromagnetic signal generated by the metallized film capacitor under test, for example, at a preset distance from the metallized film capacitor under test.

[0058] S202, based on multiple high-frequency electromagnetic signals, determine the monitoring results of the self-healing characteristics of the metallized film capacitor under test.

[0059] The self-healing characteristic monitoring results include the number of times the metallized film capacitor under test self-heals within a preset time period and the severity of the self-healing.

[0060] In one embodiment, the self-healing characteristic monitoring result of the metallized film capacitor under test can be determined by a preset neural network model. Specifically, multiple high-frequency electromagnetic signals are used as inputs to the neural network model, and the self-healing characteristic monitoring result of the metallized film capacitor under test is obtained by analyzing the multiple high-frequency electromagnetic signals through the neural network model.

[0061] The aforementioned method for monitoring the self-healing characteristics of metallized film capacitors utilizes a high-frequency electromagnetic signal sensor installed on the metallized film capacitor under test. This sensor acquires multiple high-frequency electromagnetic signals generated by the capacitor within a preset time period. Based on these signals, the self-healing characteristic monitoring result of the metallized film capacitor is determined. The high-frequency electromagnetic signals are generated when the capacitor undergoes self-healing, with one signal generated for each instance of self-healing. This method, by employing non-contact electromagnetic sensors, can acquire the high-frequency electromagnetic signals generated by the capacitor under test without altering its operating circuit. The self-healing characteristic monitoring result is then determined based on these signals. This method achieves accurate monitoring of the metallized film capacitor under test with fewer monitoring devices, without changing its operating circuit, and is cost-effective as it uses only electromagnetic sensors and no additional equipment.

[0062] The following provides a detailed explanation of how to determine the self-healing characteristic monitoring results of a metallized film capacitor under test based on multiple high-frequency electromagnetic signals. In one embodiment, determining the self-healing characteristic monitoring results of the metallized film capacitor under test based on multiple high-frequency electromagnetic signals includes:

[0063] S301, based on multiple high-frequency electromagnetic signals, acquires the self-healing characteristics and changes in self-healing characteristics of the metallized film capacitor under test within a preset time period.

[0064] The self-healing characteristic includes the number of self-healing cycles. Since the metallized film capacitor under test generates a high-frequency electromagnetic signal each time it self-heals, the number of self-healing cycles of the metallized film capacitor under test within a preset time period can be determined based on the number of multiple high-frequency electromagnetic signals. In one embodiment, the self-healing characteristic of the metallized film capacitor under test within a preset time period is obtained based on multiple high-frequency electromagnetic signals, including:

[0065] S401 counts the number of multiple high-frequency electromagnetic signals.

[0066] S402, based on the correspondence between the number of high-frequency electromagnetic signals and the number of pulse currents, determine the number of self-healing times of the metallized film capacitor under test within a preset time period.

[0067] In one embodiment, this embodiment provides a self-healing monitoring platform for metallized film capacitors based on ultra-high frequency signals, such as... Figure 3 As shown, the experimental section consists of a DC power supply DC, a protective resistor R, and a metallized film capacitor C to be tested. x Coupling capacitor C p The measurement section consists of a high-voltage probe (Vp), a current sensor (CT), an ultra-high-frequency electromagnetic sensor (G), and their respective amplifiers. The DC power supply has an adjustable output voltage. Other components include a protection resistor (R) and the metallized film capacitor under test (C). x Parallel capacitor C p The parameters of the devices should be selected according to the test requirements, and the oscilloscope sampling rate should not be less than 5 Gs / s.

[0068] exist Figure 3 In the circuit, the protection resistor R is set at the DC output terminal of the DC power supply. When the metallized film capacitor C under test... x It can protect the DC power supply in case of self-healing or through-breakdown; coupling capacitor C p With the metallized film capacitor under test C x A parallel circuit is formed to generate a detectable loop current signal; the high-voltage probe Vp is used to detect the voltage applied to the metallized film capacitor C under test. x The actual voltage and current sensor CT are used to detect the C of the metallized film capacitor under test. x When internal self-healing occurs, the circulating current signal in the parallel circuit is detected by the ultra-high frequency electromagnetic sensor G, which is used to detect the metallized film capacitor C under test.x The ultra-high frequency electromagnetic signal emitted when the internal self-healing occurs is acquired by an oscilloscope.

[0069] The loop current signal acquired by the current sensor was selected as the trigger signal for the oscilloscope. The current signal at the moment of self-healing and the ultra-high frequency electromagnetic signal at the moment of self-healing were acquired using an ultra-high frequency electromagnetic sensor. The test results are as follows: Figure 4a and Figure 4b As shown. In Figure 4a In the short timescale (25 μs), the current signal exhibits a steeper rising edge near -2 μs. Correspondingly, in Figure 4b In the process, ultra-high frequency electromagnetic signals exhibit a distinct pulse near -2μs; for example... Figure 5a and Figure 5b As shown, in Figure 5a The medium current signal exhibits a steeper rising edge near -1 μs in a short timescale (25 μs), corresponding to this... Figure 5b The medium-frequency electromagnetic signal exhibits a distinct pulse around -1μs.

[0070] Through experiments and the collection of extensive data, it was discovered that there is a one-to-one correspondence between ultra-high frequency electromagnetic signal pulses and current signal fluctuations, proving that the collected ultra-high frequency electromagnetic signals can accurately reflect the number of self-healing events within metallized film capacitors. Under conditions ranging from the rated voltage to 1.5 times the rated voltage, the self-healing process within the capacitor becomes more frequent and intense, with a significant increase in the amplitude of the ultra-high frequency signal pulses. Therefore, ultra-high frequency electromagnetic signals can be used to reflect the number and intensity of self-healing events within the capacitor.

[0071] In this embodiment, the ultra-high frequency electromagnetic signal at the self-healing moment of the metallized film capacitor was tested, clarifying the correspondence between the ultra-high frequency electromagnetic signal and the pulse current signal at the self-healing moment, proving the feasibility of using ultra-high frequency electromagnetic signals to replace pulse current information for monitoring self-healing characteristics; and demonstrating the superiority and accuracy of ultra-high frequency electromagnetic signals in monitoring the short-term continuous self-healing inside the capacitor.

[0072] Therefore, after obtaining the number of multiple high-frequency electromagnetic signals collected by the electromagnetic sensor within a preset time period, the number of multiple high-frequency electromagnetic signals can be used as the number of self-healing times of the metallized film capacitor under test within the preset time period based on the correspondence between the number of high-frequency electromagnetic signals and the number of pulse currents.

[0073] Alternatively, the number of self-healing times of the metallized film capacitor under test within a preset time period can be determined directly through a preset statistical model. Specifically, multiple high-frequency electromagnetic signals are used as inputs to the statistical model, and the number of self-healing times of the metallized film capacitor under test within a preset time period is obtained through the analysis of multiple high-frequency electromagnetic signals by the statistical model.

[0074] In one embodiment, the spectral information of multiple high-frequency electromagnetic signals can be analyzed to determine the changes in the self-healing characteristics of the metallized film capacitor under test within a preset time period.

[0075] S302, Based on the self-healing characteristics and changes in self-healing characteristics, determine the monitoring results of the self-healing characteristics of the metallized film capacitor under test.

[0076] The self-healing characteristics and changes in self-healing characteristics are directly used as the monitoring results of the self-healing characteristics of the metallized film capacitor under test.

[0077] Optionally, the method for determining the self-healing characteristic monitoring result of the metallized film capacitor under test based on the self-healing characteristics and changes in self-healing characteristics can also be as follows: since the self-healing characteristics include the number of self-healing cycles and the self-healing energy, the self-healing characteristic monitoring result of the metallized film capacitor under test is determined according to a preset monitoring level. For example, if the number of self-healing cycles within a preset time period is within a preset range and the self-healing energy and changes in self-healing characteristics are within a preset range, then the self-healing characteristic monitoring result of the metallized film capacitor under test is determined to be "normal"; if the number of self-healing cycles within a preset time period is not within a preset range and the self-healing energy and changes in self-healing characteristics are not within a preset range, then the self-healing characteristic monitoring result of the metallized film capacitor under test is determined to be "severely abnormal"; if the number of self-healing cycles within a preset time period is not within a preset range and the self-healing energy and changes in self-healing characteristics are within a preset range, or if the number of self-healing cycles within a preset time period is within a preset range and the self-healing energy and changes in self-healing characteristics are not within a preset range, then the self-healing characteristic monitoring result of the metallized film capacitor under test is determined to be "slightly abnormal".

[0078] Among them, the self-healing characteristic monitoring result of the metallized film capacitor under test can indicate the aging state of the metallized film capacitor under test. For example, if the self-healing characteristic monitoring result of the metallized film capacitor under test is "normal", it means that the metallized film capacitor under test has not aged and does not need to be replaced with a new capacitor; if the self-healing characteristic monitoring result of the metallized film capacitor under test is "severely abnormal", it means that the metallized film capacitor under test is severely aged and needs to be replaced with a new capacitor.

[0079] Therefore, the self-healing characteristic monitoring results of the metallized film capacitor under test can be determined based on the above monitoring levels.

[0080] The aforementioned method for monitoring the self-healing characteristics of metallized film capacitors acquires the self-healing characteristics and changes in these characteristics of the metallized film capacitor under test within a preset time period based on multiple high-frequency electromagnetic signals. The monitoring results of the self-healing characteristics of the metallized film capacitor under test are then determined based on these characteristics and changes. This method determines the monitoring results of the self-healing characteristics of the metallized film capacitor under test by using the self-healing characteristics and changes in these characteristics of multiple high-frequency electromagnetic signals. By monitoring the self-healing characteristics of the metallized film capacitor under test from two dimensions—the self-healing characteristics themselves and their changes—the accuracy of the monitoring results is ensured.

[0081] In one embodiment, the self-healing characteristic includes self-healing energy. Obtaining the self-healing characteristic of the metallized film capacitor under test within a preset time period based on multiple high-frequency electromagnetic signals includes the following steps:

[0082] S501 determines the frequency domain energy corresponding to each high-frequency electromagnetic signal based on each high-frequency electromagnetic signal.

[0083] Since high-frequency electromagnetic signals are time-frequency signals, they can be converted into spectrum signals, and then the energy of the corresponding high-frequency electromagnetic signal can be obtained from the spectrum signals.

[0084] The energy of the spectral signal corresponding to each high-frequency electromagnetic signal can be calculated according to formula (1).

[0085]

[0086] Where E represents the energy spectrum of the high-frequency electromagnetic signal, f(t) represents the spectral signal corresponding to the high-frequency electromagnetic signal, and t represents the frequency.

[0087] The energy of each high-frequency electromagnetic signal obtained above is determined as the frequency domain energy of each high-frequency electromagnetic signal generated by the metallized film capacitor under test.

[0088] S502, based on the correspondence between the frequency domain energy of the high-frequency electromagnetic signal and the self-healing energy of the pulse current, obtains the self-healing energy generated by the metallized film capacitor under test during each self-healing within a preset time period.

[0089] Among them, the frequency domain energy of the high-frequency electromagnetic signal can reflect the self-healing energy generated when the metallized film capacitor under test undergoes self-healing.

[0090] Based on the comparative experiments above, it can be seen that there is a corresponding relationship between the frequency domain energy of the high-frequency electromagnetic signal generated when the metallized film capacitor under test undergoes self-healing and the self-healing energy of the pulse current generated when the metallized film capacitor under test undergoes self-healing. Therefore, based on the corresponding relationship between the frequency domain energy of the high-frequency electromagnetic signal and the self-healing energy of the pulse current, as well as the frequency domain energy of the high-frequency electromagnetic signal generated when the metallized film capacitor under test undergoes self-healing within a preset time period, the self-healing energy generated by the metallized film capacitor under test during the preset time period can be obtained.

[0091] The aforementioned method for monitoring the self-healing characteristics of metallized film capacitors determines the frequency domain energy corresponding to each high-frequency electromagnetic signal. Based on the correspondence between the frequency domain energy of the high-frequency electromagnetic signals and the self-healing energy of the pulse current, the self-healing energy generated by the metallized film capacitor under test during each self-healing process within a preset time period is obtained. The frequency domain energy of the high-frequency electromagnetic signals reflects the self-healing energy generated when the metallized film capacitor under test undergoes self-healing. This method calculates the frequency domain energy of each high-frequency electromagnetic signal and obtains the self-healing energy generated by the metallized film capacitor under test during each self-healing process within a preset time period based on the correspondence between the frequency domain energy of the high-frequency electromagnetic signals and the self-healing energy of the pulse current, ensuring the accuracy of the self-healing energy of the metallized film capacitor under test within the preset time period.

[0092] In one embodiment, the self-healing characteristic changes of the metallized film capacitor under test within a preset time period are obtained based on multiple high-frequency electromagnetic signals, including the following steps:

[0093] S1, determine the characteristic changes of each high-frequency electromagnetic signal based on each high-frequency electromagnetic signal.

[0094] In one embodiment, determining the characteristic changes of each high-frequency electromagnetic signal based on each high-frequency electromagnetic signal includes: performing signal transformation processing on each high-frequency electromagnetic signal to obtain multiple frequency domain spectra; and determining the characteristic changes of each high-frequency electromagnetic signal based on the energy distribution of each frequency domain spectra.

[0095] Each high-frequency electromagnetic signal is processed by signal transformation to obtain multiple frequency domain spectra. The signal transformation processing method can be Fast Fourier Transform.

[0096] Specifically, each high-frequency electromagnetic signal is subjected to a fast Fourier transform to obtain the frequency domain spectrum corresponding to each high-frequency electromagnetic signal.

[0097] Then, based on the energy distribution of each frequency domain spectrum, the characteristic changes of each high-frequency electromagnetic signal are determined. Specifically, for any frequency domain spectrum, the amplitude peak value in the frequency domain spectrum is obtained, and the change of the amplitude peak value in the frequency domain spectrum is taken as the characteristic change of the corresponding high-frequency electromagnetic signal.

[0098] In one embodiment, determining the characteristic changes of each high-frequency electromagnetic signal based on each high-frequency electromagnetic signal includes: determining the time-domain characteristic changes of each high-frequency electromagnetic signal based on each high-frequency electromagnetic signal.

[0099] For any high-frequency electromagnetic signal, which is a time-domain signal, the time-domain characteristics of the high-frequency electromagnetic signal can be directly obtained, and the characteristic changes can be identified as the time-domain characteristic changes of the high-frequency electromagnetic signal.

[0100] Time-domain features can include dimensional feature parameters and dimensionless feature parameters.

[0101] Alternatively, the waveform of a high-frequency electromagnetic signal can be directly determined as the time-domain characteristic change of the high-frequency electromagnetic signal.

[0102] S2, based on the characteristic changes of each high-frequency electromagnetic signal, determine the self-healing characteristic changes of the metallized film capacitor under test within a preset time period.

[0103] The characteristic changes of each high-frequency electromagnetic signal are determined as the self-healing characteristic changes of the metallized film capacitor under test within a preset time period.

[0104] The aforementioned method for monitoring the self-healing characteristics of metallized film capacitors determines the characteristic changes of each high-frequency electromagnetic signal, and then determines the self-healing characteristic changes of the metallized film capacitor under test within a preset time period based on these characteristic changes. This method, by analyzing the characteristics of each high-frequency electromagnetic signal, determines the self-healing characteristic changes of the metallized film capacitor under test within a preset time period, thus achieving characteristic monitoring of the metallized film capacitor under test.

[0105] In one embodiment, such as Figure 6 As shown, this embodiment includes the following steps:

[0106] S601 uses an ultra-high frequency electromagnetic sensor installed on the capacitor under test to collect multiple ultra-high frequency electromagnetic signals generated by the capacitor under test within a preset time period.

[0107] S602, obtains the number of multiple high-frequency electromagnetic signals.

[0108] S603 determines the number of multiple high-frequency electromagnetic signals as the number of self-healing times of the capacitor under test within a preset time period.

[0109] S604 determines the frequency domain energy corresponding to each high-frequency electromagnetic signal based on each high-frequency electromagnetic signal.

[0110] S605, based on the correspondence between the frequency domain energy of the high-frequency electromagnetic signal and the self-healing energy of the pulse current, obtains the self-healing energy generated by the metallized film capacitor under test during each self-healing within a preset time period.

[0111] S606, based on each high-frequency electromagnetic signal, determine the time-domain / frequency-domain characteristic changes of each high-frequency electromagnetic signal.

[0112] S607, based on the time-domain / frequency-domain characteristic changes of each high-frequency electromagnetic signal, determines the self-healing characteristic changes of the metallized film capacitor under test within a preset time period.

[0113] S608. If the number of self-healing times within the preset time period is within the preset range and the changes in self-healing energy and self-healing characteristics are within the preset range, then proceed to step S609; otherwise, proceed to step S610.

[0114] S609, the self-healing characteristic monitoring result of the metallized film capacitor under test is "normal".

[0115] S610, if the number of self-healing times within the preset time period is not within the preset quantity range and the changes in self-healing energy and self-healing characteristics are not within the preset range, then execute step S611; otherwise, execute step S612.

[0116] S611, the self-healing characteristic monitoring result of the metallized film capacitor under test is "severely abnormal".

[0117] S612, the self-healing characteristic monitoring result of the metallized film capacitor under test is "slightly abnormal".

[0118] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0119] Based on the same inventive concept, this application also provides a metallized film capacitor self-healing feature monitoring device for implementing the aforementioned method for monitoring the self-healing features of metallized film capacitors. The solution provided by this device is similar to the solution described in the above method. Therefore, the specific limitations of one or more embodiments of the metallized film capacitor self-healing feature monitoring device provided below can be found in the limitations of the metallized film capacitor self-healing feature monitoring method described above, and will not be repeated here.

[0120] In one embodiment, such as Figure 7 As shown, a self-healing feature monitoring device 700 for metallized film capacitors is provided, comprising: an acquisition module 701 and a determination module 702, wherein:

[0121] The acquisition module 701 is used to acquire multiple high-frequency electromagnetic signals generated by the metallized film capacitor under test within a preset time period through a high-frequency electromagnetic signal sensor installed on the metallized film capacitor under test; the high-frequency electromagnetic signals are generated when the metallized film capacitor under test undergoes self-healing, and one high-frequency electromagnetic signal is generated for each self-healing.

[0122] The determination module 702 is used to determine the self-healing characteristic monitoring results of the metallized film capacitor under test based on multiple high-frequency electromagnetic signals.

[0123] In one embodiment, the determining module 702 includes:

[0124] The first determining unit is used to obtain the self-healing characteristics and changes in self-healing characteristics of the metallized film capacitor under test within a preset time period based on multiple high-frequency electromagnetic signals.

[0125] The second determining unit is used to determine the self-healing characteristic monitoring results of the metallized film capacitor under test based on the self-healing characteristics and changes in the self-healing characteristics.

[0126] In one embodiment, the first determining unit includes:

[0127] The statistics subunit is used to count the number of multiple high-frequency electromagnetic signals.

[0128] The first determining subunit is used to determine the number of self-healing times of the metallized film capacitor under test within a preset time period based on the correspondence between the number of high-frequency electromagnetic signals and the number of pulse currents.

[0129] In one embodiment, the first determining unit includes:

[0130] The second determining subunit is used to determine the frequency domain energy corresponding to each high-frequency electromagnetic signal based on each high-frequency electromagnetic signal.

[0131] The third determining subunit is used to obtain the self-healing energy generated by the metallized film capacitor under test during each self-healing within a preset time period based on the correspondence between the frequency domain energy of the high-frequency electromagnetic signal and the self-healing energy of the pulse current; the frequency domain energy of the high-frequency electromagnetic signal can reflect the self-healing energy generated when the metallized film capacitor under test undergoes self-healing.

[0132] In one embodiment, the first determining unit includes:

[0133] The fourth determining subunit is used to determine the characteristic changes of each high-frequency electromagnetic signal based on each high-frequency electromagnetic signal.

[0134] The fifth determining subunit is used to determine the self-healing characteristic changes of the metallized film capacitor under test within a preset time period based on the characteristic changes of each high-frequency electromagnetic signal.

[0135] In one embodiment, the fourth determining subunit includes:

[0136] The signal transformation subunit is used to perform signal transformation processing on each high-frequency electromagnetic signal to obtain multiple frequency domain spectra.

[0137] The sixth determination subunit is used to determine the characteristic changes of each high-frequency electromagnetic signal based on the energy distribution of each frequency domain spectrum.

[0138] In one embodiment, the fourth determining subunit includes:

[0139] The seventh determining subunit is used to determine the time-domain characteristic changes of each high-frequency electromagnetic signal based on each high-frequency electromagnetic signal.

[0140] Each module in the aforementioned metallized film capacitor self-healing feature monitoring device can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in or independent of the processor in a computer device in hardware form, or stored in the memory of a computer device in software form, so that the processor can call and execute the operations corresponding to each module.

[0141] In one embodiment, a computer device is provided, which may be a server, and its internal structure diagram may be as follows: Figure 8 As shown, the computer device includes a processor, memory, input / output (I / O) interfaces, and a communication interface. The processor, memory, and I / O interfaces are connected via a system bus, and the communication interface is also connected to the system bus via the I / O interfaces. The processor provides computational and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system, computer programs, and a database. The internal memory provides the environment for the operation of the operating system and computer programs stored in the non-volatile storage media. The database stores monitoring data on the self-healing characteristics of metallized film capacitors. The I / O interfaces are used for exchanging information between the processor and external devices. The communication interface is used for communication with external terminals via a network connection. When the computer program is executed by the processor, it implements a method for monitoring the self-healing characteristics of metallized film capacitors.

[0142] Those skilled in the art will understand that Figure 8The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0143] In one embodiment, a computer device is provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0144] A high-frequency electromagnetic signal sensor installed on the metallized film capacitor under test acquires multiple high-frequency electromagnetic signals generated by the metallized film capacitor under test within a preset time period; the high-frequency electromagnetic signals are generated when the metallized film capacitor under test undergoes self-healing, and each self-healing corresponds to the generation of one high-frequency electromagnetic signal.

[0145] The self-healing characteristics monitoring results of the metallized film capacitor under test were determined based on multiple high-frequency electromagnetic signals.

[0146] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0147] Based on multiple high-frequency electromagnetic signals, the self-healing characteristics and changes in self-healing characteristics of the metallized film capacitor under test are obtained within a preset time period.

[0148] Based on the self-healing characteristics and changes in self-healing characteristics, the monitoring results of the self-healing characteristics of the metallized film capacitor under test are determined.

[0149] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0150] Count the number of multiple high-frequency electromagnetic signals;

[0151] Based on the correspondence between the number of high-frequency electromagnetic signals and the number of pulse currents, the number of self-healing times of the metallized film capacitor under test within a preset time period is determined.

[0152] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0153] Determine the frequency domain energy corresponding to each high-frequency electromagnetic signal based on each high-frequency electromagnetic signal.

[0154] Based on the correspondence between the frequency domain energy of the high-frequency electromagnetic signal and the self-healing energy of the pulse current, the self-healing energy generated by the metallized film capacitor under test during each self-healing within a preset time period is obtained; the frequency domain energy of the high-frequency electromagnetic signal can reflect the self-healing energy generated when the metallized film capacitor under test undergoes self-healing.

[0155] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0156] Based on each high-frequency electromagnetic signal, determine the characteristic changes of each high-frequency electromagnetic signal;

[0157] Based on the characteristic changes of each high-frequency electromagnetic signal, the self-healing characteristic changes of the metallized film capacitor under test within a preset time period are determined.

[0158] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0159] Each high-frequency electromagnetic signal was processed by signal transformation to obtain multiple frequency domain spectra.

[0160] Based on the energy distribution of each frequency domain spectrum, the characteristic changes of each high-frequency electromagnetic signal are determined.

[0161] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0162] Based on each high-frequency electromagnetic signal, determine the time-domain characteristic changes of each high-frequency electromagnetic signal.

[0163] The implementation principles and technical effects of each step in this embodiment are similar to those of the above-described method for monitoring the self-healing characteristics of metallized film capacitors, and will not be repeated here.

[0164] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon, the computer program performing the following steps when executed by a processor:

[0165] A high-frequency electromagnetic signal sensor installed on the metallized film capacitor under test acquires multiple high-frequency electromagnetic signals generated by the metallized film capacitor under test within a preset time period; the high-frequency electromagnetic signals are generated when the metallized film capacitor under test undergoes self-healing, and each self-healing corresponds to the generation of one high-frequency electromagnetic signal.

[0166] The self-healing characteristics monitoring results of the metallized film capacitor under test were determined based on multiple high-frequency electromagnetic signals.

[0167] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0168] Based on multiple high-frequency electromagnetic signals, the self-healing characteristics and changes in self-healing characteristics of the metallized film capacitor under test are obtained within a preset time period.

[0169] Based on the self-healing characteristics and changes in self-healing characteristics, the monitoring results of the self-healing characteristics of the metallized film capacitor under test are determined.

[0170] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0171] Count the number of multiple high-frequency electromagnetic signals;

[0172] Based on the correspondence between the number of high-frequency electromagnetic signals and the number of pulse currents, the number of self-healing times of the metallized film capacitor under test within a preset time period is determined.

[0173] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0174] Determine the frequency domain energy corresponding to each high-frequency electromagnetic signal based on each high-frequency electromagnetic signal.

[0175] Based on the correspondence between the frequency domain energy of the high-frequency electromagnetic signal and the self-healing energy of the pulse current, the self-healing energy generated by the metallized film capacitor under test during each self-healing within a preset time period is obtained; the frequency domain energy of the high-frequency electromagnetic signal can reflect the self-healing energy generated when the metallized film capacitor under test undergoes self-healing.

[0176] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0177] Based on each high-frequency electromagnetic signal, determine the characteristic changes of each high-frequency electromagnetic signal;

[0178] Based on the characteristic changes of each high-frequency electromagnetic signal, the self-healing characteristic changes of the metallized film capacitor under test within a preset time period are determined.

[0179] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0180] Each high-frequency electromagnetic signal was processed by signal transformation to obtain multiple frequency domain spectra.

[0181] Based on the energy distribution of each frequency domain spectrum, the characteristic changes of each high-frequency electromagnetic signal are determined.

[0182] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0183] Based on each high-frequency electromagnetic signal, determine the time-domain characteristic changes of each high-frequency electromagnetic signal.

[0184] The implementation principles and technical effects of each step in this embodiment when the computer program is executed by the processor are similar to those of the above-mentioned method for monitoring the self-healing characteristics of metallized film capacitors, and will not be repeated here.

[0185] In one embodiment, a computer program product is provided, including a computer program that, when executed by a processor, performs the following steps:

[0186] A high-frequency electromagnetic signal sensor installed on the metallized film capacitor under test acquires multiple high-frequency electromagnetic signals generated by the metallized film capacitor under test within a preset time period; the high-frequency electromagnetic signals are generated when the metallized film capacitor under test undergoes self-healing, and each self-healing corresponds to the generation of one high-frequency electromagnetic signal.

[0187] The self-healing characteristics monitoring results of the metallized film capacitor under test were determined based on multiple high-frequency electromagnetic signals.

[0188] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0189] Based on multiple high-frequency electromagnetic signals, the self-healing characteristics and changes in self-healing characteristics of the metallized film capacitor under test are obtained within a preset time period.

[0190] Based on the self-healing characteristics and changes in self-healing characteristics, the monitoring results of the self-healing characteristics of the metallized film capacitor under test are determined.

[0191] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0192] Count the number of multiple high-frequency electromagnetic signals;

[0193] Based on the correspondence between the number of high-frequency electromagnetic signals and the number of pulse currents, the number of self-healing times of the metallized film capacitor under test within a preset time period is determined.

[0194] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0195] Determine the frequency domain energy corresponding to each high-frequency electromagnetic signal based on each high-frequency electromagnetic signal.

[0196] Based on the correspondence between the frequency domain energy of the high-frequency electromagnetic signal and the self-healing energy of the pulse current, the self-healing energy generated by the metallized film capacitor under test during each self-healing within a preset time period is obtained; the frequency domain energy of the high-frequency electromagnetic signal can reflect the self-healing energy generated when the metallized film capacitor under test undergoes self-healing.

[0197] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0198] Based on each high-frequency electromagnetic signal, determine the characteristic changes of each high-frequency electromagnetic signal;

[0199] Based on the characteristic changes of each high-frequency electromagnetic signal, the self-healing characteristic changes of the metallized film capacitor under test within a preset time period are determined.

[0200] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0201] Each high-frequency electromagnetic signal was processed by signal transformation to obtain multiple frequency domain spectra.

[0202] Based on the energy distribution of each frequency domain spectrum, the characteristic changes of each high-frequency electromagnetic signal are determined.

[0203] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0204] Based on each high-frequency electromagnetic signal, determine the time-domain characteristic changes of each high-frequency electromagnetic signal.

[0205] The implementation principles and technical effects of each step in this embodiment when the computer program is executed by the processor are similar to those of the above-mentioned method for monitoring the self-healing characteristics of metallized film capacitors, and will not be repeated here.

[0206] It should be noted that the data involved in this application (including but not limited to data used for analysis, data stored, data displayed, etc.) are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of the relevant data must comply with the relevant laws, regulations and standards of the relevant countries and regions.

[0207] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0208] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0209] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A method for monitoring the self-healing characteristics of a metallized film capacitor, characterized in that, The method includes: A high-frequency electromagnetic signal sensor installed on the metallized film capacitor under test acquires multiple high-frequency electromagnetic signals generated by the metallized film capacitor under test within a preset time period; the high-frequency electromagnetic signals are generated when the metallized film capacitor under test undergoes self-healing, and each self-healing corresponds to the generation of one high-frequency electromagnetic signal. Based on the multiple high-frequency electromagnetic signals, the self-healing characteristics and changes in self-healing characteristics of the metallized film capacitor under test are obtained within the preset time period; the self-healing characteristics include the number of self-healing times and the self-healing energy, and the changes in self-healing characteristics include the time-domain / frequency-domain changes of each high-frequency electromagnetic signal. Based on the self-healing characteristics and changes in the self-healing characteristics, the self-healing characteristic monitoring results of the metallized film capacitor under test are determined, including: If the number of self-healing events within a preset time period is within a preset range and the changes in self-healing energy and self-healing characteristics are within a preset range, then the self-healing characteristic monitoring result is determined to be normal. If the number of self-healing events within the preset time period is not within the preset quantity range and the changes in self-healing energy and self-healing characteristics are not within the preset range, then the self-healing characteristic monitoring result is determined to be severely abnormal. If the number of self-healing events within the preset time period is not within the preset quantity range and the changes in self-healing energy and self-healing characteristics are within the preset range, or if the number of self-healing events within the preset time period is within the preset quantity range and the changes in self-healing energy and self-healing characteristics are not within the preset range, then the self-healing characteristic monitoring result is determined to be slightly abnormal.

2. The method according to claim 1, characterized in that, Based on the multiple high-frequency electromagnetic signals, the self-healing characteristics of the metallized film capacitor under test within the preset time period are obtained, including: Count the number of the multiple high-frequency electromagnetic signals; Based on the correspondence between the number of high-frequency electromagnetic signals and the number of pulse currents, the number of self-healing times of the metallized film capacitor under test within the preset time period is determined.

3. The method according to claim 1, characterized in that, Based on the multiple high-frequency electromagnetic signals, the self-healing characteristics of the metallized film capacitor under test within the preset time period are obtained, including: Based on each of the high-frequency electromagnetic signals, determine the frequency domain energy corresponding to each of the high-frequency electromagnetic signals; Based on the correspondence between the frequency domain energy of the high-frequency electromagnetic signal and the self-healing energy of the pulse current, the self-healing energy generated by the metallized film capacitor under test during each self-healing within the preset time period is obtained; the frequency domain energy of the high-frequency electromagnetic signal can reflect the self-healing energy generated by the metallized film capacitor under test during self-healing.

4. The method according to claim 1, characterized in that, Based on the multiple high-frequency electromagnetic signals, the self-healing characteristic changes of the metallized film capacitor under test within the preset time period are obtained, including: Based on each of the high-frequency electromagnetic signals, determine the characteristic changes of each of the high-frequency electromagnetic signals; Based on the characteristic changes of each of the high-frequency electromagnetic signals, the self-healing characteristic changes of the metallized film capacitor under test within the preset time period are determined.

5. The method according to claim 4, characterized in that, The step of determining the characteristic changes of each high-frequency electromagnetic signal based on each of the high-frequency electromagnetic signals includes: Each of the high-frequency electromagnetic signals is subjected to signal transformation processing to obtain multiple frequency domain spectra. Based on the energy distribution of each frequency domain spectrum, the characteristic changes of each high-frequency electromagnetic signal are determined.

6. The method according to claim 4, characterized in that, The step of determining the characteristic changes of each high-frequency electromagnetic signal based on each of the high-frequency electromagnetic signals includes: Based on each of the high-frequency electromagnetic signals, determine the time-domain characteristic changes of each of the high-frequency electromagnetic signals.

7. A device for monitoring the self-healing characteristics of a metallized film capacitor, characterized in that, The apparatus used in the self-healing feature monitoring method for metallized film capacitors as described in claim 1 includes: The acquisition module is used to acquire multiple high-frequency electromagnetic signals generated by the metallized film capacitor under test within a preset time period through a high-frequency electromagnetic signal sensor installed on the metallized film capacitor under test; the high-frequency electromagnetic signals are generated when the metallized film capacitor under test undergoes self-healing, and one high-frequency electromagnetic signal is generated for each self-healing. The determination module is used to determine the self-healing characteristic monitoring results of the metallized film capacitor under test based on the multiple high-frequency electromagnetic signals.

8. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the method according to any one of claims 1 to 6.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 6.

Citation Information

Patent Citations

  • Method for testing self-healing performance of self-healing metallized film capacitor

    CN112444700A

  • Capacitor self-healing detection data acquisition system and capacitor quality evaluation method

    CN115436681A