Integrated phase-modulated interferometer arms

Abstract

An apparatus comprising a dual waveguide optical phase modulator comprising a first waveguide and a second waveguide, wherein each of the first waveguide and the second waveguide comprises a first waveguide core structure and a second waveguide core structure. At least one of the first waveguide core structure or the second waveguide core structure comprises a ridge.

Description

Technical Field

[0001] This disclosure relates to an integrated phase modulation interferometer arm. Background Technology

[0002] Interferometers typically include waveguide arms on which light waves travel between any number of splitters and combiners. The phase of the light waves propagating on the arms can be modulated using any of a variety of optical phase modulation techniques. For example, a silicon-insulator-silicon capacitor (SISCAP) type optical phase modulator uses a structure comprising at least one layer of insulating material between silicon structures forming the waveguide. This type of optical phase modulator includes a structure that allows a voltage to be applied to the capacitor structure to control the amount of phase modulation. For some interferometers, such as Mach-Zehnder interferometers (MZI), there are two such waveguides relatively close together, but sufficient space around the optical phase modulator to accommodate electrodes to apply a voltage, for example, to the capacitor structure of the SISCAP type optical phase modulator. Summary of the Invention

[0003] In general, in a first aspect, an integrated photonic device configured to operate in pairs of light waves is provided. The integrated photonic device includes a substrate. The integrated photonic device includes an optical phase-shifting structure for phase-shifting a first light wave and a second light wave of two or more light waves. The optical phase-shifting structure includes: a first layer, over the substrate, including a first semiconductor material, the first semiconductor material including a first doped region exhibiting a first conductivity type; and a second layer, over the substrate and separated from the first layer, including a second semiconductor material, the second semiconductor material including a second doped region exhibiting a second conductivity type opposite to the first conductivity type. At least one of the first layer or the second layer includes at least one ridge of its respective semiconductor material, the at least one ridge extending along a depth axis into a portion of a volume between the first layer and the second layer. At least one of the first layer or the second layer includes a segment of dielectric material across a transverse axis separating two portions of its respective doped region to separate the first light wave from the second light wave.

[0004] Implementations may include one or more of the following features. The integrated photonic device may also include a third layer, located between at least a portion of the volume between the first and second layers, said third layer comprising a dielectric material.

[0005] The integrated photonic device may further include: a first electrode, a portion of a first doped region on a first side of a segment in contact with dielectric material; a second electrode, a portion of a second doped region on the first side of a segment in contact with dielectric material; a third electrode, a portion of a first doped region on a second side of a segment in contact with dielectric material; and a fourth electrode, a portion of a second doped region on a second side of a segment in contact with dielectric material.

[0006] The first layer may be on top of the second layer, and the portion of the second doped region on the first side of the dielectric material segment may extend further along the horizontal axis from the dielectric material segment than the portion of the first doped region on the first side of the dielectric material segment.

[0007] The portion of the second doped region on the second side of the dielectric material segment can extend further along the horizontal axis from the dielectric material segment than the portion of the first doped region on the second side of the dielectric material segment.

[0008] The integrated photonic device may also include a fourth layer between the substrate and the first layer, the fourth layer comprising a dielectric material.

[0009] The fourth layer may include the buried oxide layer of a silicon-on-insulator (SOI) integrated circuit.

[0010] The dielectric material segment can contact the fourth layer.

[0011] The first and second layers may each include segments of dielectric material that separate the two parts of their respective doped regions across the horizontal axis to separate the peaks of the optical spatial mode of the first light wave from the peaks of the optical spatial mode of the second light wave.

[0012] The segments in the first and second layers can each contact the third layer.

[0013] Integrated photonic devices may also include a fifth layer, above both the first and second layers, including dielectric materials.

[0014] The dielectric material segment can separate the first ridge of the first semiconductor material of the first layer from the second ridge of the first semiconductor material of the first layer. The first ridge can extend along the propagation axis to provide a first waveguide portion to guide the optical spatial mode of the first light wave, and the second ridge can extend along the propagation axis to provide a second waveguide portion to guide the optical spatial mode of the second light wave.

[0015] The first waveguide portion and the second waveguide portion can be configured to form corresponding arms of an interferometric structure.

[0016] The interference structure may include at least a portion of a Mach-Zehnder interferometer.

[0017] Each of the first waveguide portion and the second waveguide portion may include a semiconductor-insulator-semiconductor capacitor (SISCAP).

[0018] The size of the dielectric material segments that separate the two parts of their respective doped regions across the horizontal axis can range from about 1 micrometer to 50 micrometers.

[0019] The size of the dielectric material segments that separate the corresponding doped regions across the horizontal axis can range from about 2 micrometers to 20 micrometers.

[0020] Different parts of the first doped region have different concentrations of dopant, and different parts of the second doped region may have different concentrations of dopant.

[0021] In another general aspect, a method is provided for manufacturing an integrated photonic device configured to operate in pairs of light waves. The method includes providing a substrate. The method includes forming an optical phase-shifting structure for phase-shifting a first light wave and a second light wave of two or more light waves. The optical phase-shifting structure includes: a first layer, over the substrate, comprising a first semiconductor material including a first doped region exhibiting a first conductivity type; and a second layer, over the substrate and separated from the first layer, comprising a second semiconductor material including a second doped region exhibiting a second conductivity type opposite to the first conductivity type. The method includes forming at least one ridge of the respective semiconductor material in at least one of the first or second layers, the at least one ridge extending along a depth axis into a portion of a volume between the first and second layers; and forming a segment of dielectric material in at least one of the first or second layers, across a transverse axis, separating the two portions of their respective doped regions to separate the first light wave from the second light wave.

[0022] Implementations may include one or more of the following features. The method may include forming a third layer between at least a portion of the volume between the first and second layers, wherein the third layer comprises a dielectric material.

[0023] The method may further include: forming a first electrode, the first electrode contacting a portion of a first doped region on a first side of a segment of dielectric material; forming a second electrode, the second electrode contacting a portion of a second doped region on a first side of a segment of dielectric material; forming a third electrode, the third electrode contacting a portion of a first doped region on a second side of a segment of dielectric material; and forming a fourth electrode, the fourth electrode contacting a portion of a second doped region on a second side of a segment of dielectric material.

[0024] The first layer may be on top of the second layer, and the portion of the second doped region on the first side of the dielectric material segment may extend further along the horizontal axis from the dielectric material segment than the portion of the first doped region on the first side of the dielectric material segment.

[0025] The portion of the second doped region on the second side of the dielectric material segment can extend further along the horizontal axis from the dielectric material segment than the portion of the first doped region on the second side of the dielectric material segment.

[0026] The method may also include forming a fourth layer between the substrate and the first layer, wherein the fourth layer comprises a dielectric material.

[0027] The fourth layer may include the buried oxide layer of a silicon-on-insulator (SOI) integrated circuit.

[0028] The dielectric material segment can contact the fourth layer.

[0029] The first and second layers may each include segments of dielectric material that separate the two parts of their respective doped regions across the horizontal axis to separate the peaks of the optical spatial mode of the first light wave from the peaks of the optical spatial mode of the second light wave.

[0030] The segments in the first and second layers can each contact the third layer.

[0031] The method may also include forming a fifth layer on top of both the first and second layers, wherein the fifth layer comprises a dielectric material.

[0032] The dielectric material segment can separate the first ridge of the first semiconductor material of the first layer from the second ridge of the first semiconductor material of the first layer. The first ridge can extend along the propagation axis to provide a first waveguide portion to guide the optical spatial mode of the first light wave, and the second ridge can extend along the propagation axis to provide a second waveguide portion to guide the optical spatial mode of the second light wave.

[0033] The method may include portions of corresponding arms of an interference structure formed using a first waveguide portion and a second waveguide portion.

[0034] This method may include forming a Mach-Zehnder interferometer containing an interference structure.

[0035] Each of the first waveguide portion and the second waveguide portion may include a semiconductor-insulator-semiconductor capacitor (SISCAP).

[0036] The size of the dielectric material segments that separate the two parts of their respective doped regions across the horizontal axis can range from about 1 micrometer to 50 micrometers.

[0037] The size of the dielectric material segments that separate the corresponding doped regions across the horizontal axis can range from about 2 micrometers to 20 micrometers.

[0038] Different parts of the first doped region may have different concentrations of dopant, and different parts of the second doped region may have different concentrations of dopant.

[0039] In another general aspect, an apparatus includes: a dual-waveguide optical phase modulator comprising a first waveguide and a second waveguide, wherein each of the first waveguide and the second waveguide comprises: a first waveguide core structure and a second waveguide core structure, wherein at least one of the first waveguide core structure or the second waveguide core structure comprises a ridge.

[0040] The implementation may include one or more of the following features: the first waveguide and the second waveguide may extend along the propagation direction, and the first waveguide core structure and the second waveguide core structure may be spaced apart in a depth direction perpendicular to the propagation direction.

[0041] The first waveguide core structure may include a first semiconductor material, which may include a first doped region exhibiting a first conductivity type. The second waveguide core structure may include a second semiconductor material, which may include a second doped region exhibiting a second conductivity type opposite to the first conductivity type.

[0042] Each of the first waveguide and the second waveguide may include a dielectric material disposed between the first waveguide core structure and the second waveguide core structure.

[0043] The first waveguide and the second waveguide can extend along the propagation direction, and the first waveguide core structure of the first waveguide can be spaced apart from the first waveguide core structure of the second waveguide in a transverse direction perpendicular to the propagation direction.

[0044] The first waveguide core structure may include a ridge.

[0045] The second waveguide core structure may include a ridge.

[0046] The second waveguide core structure may not include a ridge.

[0047] The second waveguide core structure may include a ridge, while the first waveguide core structure may not include a ridge.

[0048] The second waveguide core structure of the first waveguide and the second waveguide core structure of the second waveguide can form a continuous waveguide core structure.

[0049] The second waveguide core structure of the first waveguide can be spaced apart from the second waveguide core structure of the second waveguide in a transverse direction perpendicular to the propagation direction.

[0050] The first waveguide core structure of each of the first and second waveguides may include a first semiconductor material, the first semiconductor material including a first doped region exhibiting a first conductivity type. A dual-waveguide optical phase modulator may include a segment of dielectric material disposed between the first waveguide core structures of the first and second waveguides.

[0051] The segments of the dielectric material can be configured to separate the peaks of the optical spatial mode of a first light wave propagating in a first waveguide from the peaks of the optical spatial mode of a second light wave propagating in a second waveguide.

[0052] The second waveguide core structure of each of the first and second waveguides may include a second semiconductor material, the second semiconductor material including a second doped region exhibiting a second conductivity type opposite to the first conductivity type. A dual-waveguide optical phase modulator may include a segment of dielectric material disposed between the second waveguide core structures of the first and second waveguides.

[0053] The second waveguide core structure of the first waveguide and the second waveguide core structure of the second waveguide can form a continuous waveguide core structure and may include a second semiconductor material, the second semiconductor material including a second doped region exhibiting a second conductivity type opposite to the first conductivity type.

[0054] The device may include: a first electrode pair, a first waveguide core structure and a second waveguide core structure electrically coupled to a first waveguide; and a second electrode pair, a first waveguide core structure and a second waveguide core structure electrically coupled to a second waveguide. The first electrode pair is disposed on a first side relative to the transverse direction of the dielectric material, and the second electrode pair is disposed on a second side relative to the transverse direction of the dielectric material.

[0055] The device may include a substrate, wherein a first waveguide core structure is formed in a first layer above the substrate, a second waveguide core structure is formed in a second layer above the substrate, and the first layer may be above the second layer.

[0056] Each of the first and second waveguides may include a semiconductor-insulator-semiconductor capacitor (SISCAP).

[0057] The dielectric material segments can separate the first ridge of the first waveguide and the second ridge of the second waveguide. The first ridge can extend along the propagation direction of the first waveguide to provide a first waveguide portion to guide the optical spatial mode of the first light wave propagating in the first waveguide, and the second ridge can extend along the propagation direction of the second waveguide to provide a second waveguide portion to guide the optical spatial mode of the second light wave propagating in the second waveguide.

[0058] The device may include an interference structure, wherein a first waveguide and a second waveguide may be configured to form portions of corresponding arms of the interference structure.

[0059] The device may include a Mach-Zehnder interferometer containing an interference structure.

[0060] The dielectric material segments can be configured to separate the first waveguide core structure of the first waveguide from the first waveguide core structure of the second waveguide at a distance ranging from 1 micrometer to 50 micrometers.

[0061] The dielectric material segments can be configured to separate the first waveguide core structure of the first waveguide from the first waveguide core structure of the second waveguide at a distance ranging from 2 micrometers to 20 micrometers.

[0062] Different parts of the first doped region can have different concentrations of dopant.

[0063] Different parts of the second doped region can have different concentrations of dopant.

[0064] In a plane perpendicular to the propagation directions of the first and second waveguides, the first waveguide can be symmetrical about the second waveguide with respect to the midline between the first and second waveguides.

[0065] The first waveguide can be symmetrical about the second waveguide with respect to the plane between the first and second waveguides.

[0066] In another general aspect, a system includes: a processor unit comprising: a light source configured to provide a plurality of optical outputs; and a plurality of optical modulators coupled to the light source and the first unit, the plurality of optical modulators being configured to generate an optical input vector by modulating the plurality of optical outputs provided by the light source based on a plurality of modulator control signals, the optical input vector comprising a plurality of optical signals. The processor unit includes a matrix multiplication unit coupled to the plurality of optical modulators, the matrix multiplication unit being configured to convert the optical input vector into an output vector based on a plurality of weight control signals. At least one of the optical modulators comprises at least one of the above-described integrated photonic devices, or at least one of the above-described apparatuses, or an integrated photonic device manufactured according to at least one of the above-described methods.

[0067] The implementation may include the following features. Each of the optical modulators may include at least one of the above-described integrated photonic devices, or at least one of the above-described apparatuses, or an integrated photonic device manufactured according to at least one of the above-described methods.

[0068] In another general aspect, an optical processor comprising a plurality of optical modulators is provided, wherein at least one of the optical modulators comprises at least one of the above-described integrated photonic devices, or at least one of the above-described apparatuses, or an integrated photonic device manufactured according to at least one of the above-described methods.

[0069] The implementation may include the following features. Each of the optical modulators may include at least one of the above-described integrated photonic devices, or at least one of the above-described apparatuses, or an integrated photonic device manufactured according to at least one of the above-described methods.

[0070] In another general aspect, a system is provided, comprising at least one of a robot, autonomous vehicle, autonomous drone, medical diagnostic system, fraud detection system, weather forecasting system, financial forecasting system, facial recognition system, voice recognition system, or product defect detection system. At least one of the robot, autonomous vehicle, autonomous drone, medical diagnostic system, fraud detection system, weather forecasting system, financial detection system, facial recognition system, voice recognition system, or product defect detection system includes at least one of the aforementioned integrated photonic devices, or at least one of the aforementioned apparatuses, or an integrated photonic device manufactured according to at least one of the aforementioned methods.

[0071] This aspect can have one or more of the following advantages.

[0072] The techniques described herein can be used to form relatively compact optical phase modulator structures for interferometer devices in which waveguide arms are close to each other. As described in more detail below, instead of requiring two electrical contact structures on either side of a single waveguide, some implementations require only two electrical contact structures on either side of a pair of closely spaced waveguides. This can be particularly useful, for example, if there are a large number of such interferometer devices in the array, such as in optical computing devices that use MZI arrays for matrix multiplication or other operations performed on a large number of light waves. In some implementations, the interferometer devices are integrated into the same photonic integrated circuit. The compact arrangement of MZIs requiring less area for contact structures allows for a smaller chip size in the resulting device, and / or a higher density of MZIs in the resulting device.

[0073] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. In the event of any conflict with a patent application or patent application disclosure incorporated herein by reference, this specification (including the definitions) shall prevail. Attached Figure Description

[0074] The invention can be best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be emphasized that, by convention, the various features in the drawings are not drawn to scale. Instead, for clarity, the dimensions of the various features have been arbitrarily enlarged or reduced.

[0075] Figure 1A This is a schematic diagram of the cross-section of a dual-waveguide optical phase modulator.

[0076] Figure 1B This is a schematic diagram of a top view of a dual-waveguide optical phase modulator.

[0077] Figure 2A-2I It is a schematic diagram of cross-sectional views of various waveguide pair configurations.

[0078] Figure 3 This is a flowchart of an example manufacturing process for a dual-waveguide optical phase modulator.

[0079] Similar reference numerals and names in various figures indicate similar elements. Detailed Implementation

[0080] Figure 1A A cross-sectional view of a dual-waveguide optical phase modulator 100, including a left optical phase modulator 106 and a right optical phase modulator 108, is shown. The left optical phase modulator 106 includes a left waveguide 102, and the right optical phase modulator 108 includes a right waveguide 104. In this example, the cross-sectional plane is perpendicular to the propagation axis of the waveguides (z-in front of page). Different layers are shown along the depth axis (x), and the left waveguide 102 and right waveguide 104 are separated along the transverse axis (y). The left and right waveguides 102, 104 can be included in an interferometer, such as an MZI, which uses a push-pull configuration for modulating light waves propagating in the arms of the MZI between an optical splitter and an optical combiner. There can be any number of segments of optical phase modulators along each waveguide, for example in a segmented design using segments whose lengths are proportional to the amplitude of different bits in a digital-to-analog converter. Figure 1A The view is a cross-section 10 of a pair of optical phase modulators that use a SISCAP configuration to change the refractive index in a portion of their respective waveguides.

[0081] The left optical phase modulator 106 includes a SISCAP structure comprising an upper waveguide core structure 12L formed by a lightly doped p-type portion of an upper silicon layer, a lower waveguide core structure 14L formed by a lightly doped n-type portion of a lower silicon layer, and an insulating material layer 110L between them. The lower waveguide core structure 14L has a ridge defining a thin layer of insulating material (e.g., silicon dioxide or other oxides or dielectric materials) between the upper waveguide core structure 12L and the lower waveguide core structure 14L. This figure is not to scale (for ease of viewing), but in practical embodiments, the vertical thickness t0 of the lower waveguide core structure 14L and the vertical thickness t1 of the upper waveguide core structure 12L can both be significantly greater than the vertical thickness t2 of the insulating material layer between them (e.g., an order of magnitude or more).

[0082] In some embodiments, these thicknesses can be selected to have values ​​within the following exemplary ranges: t0 can be in the range of 150 nm to 500 nm, t1 can be in the range of 100 nm to 250 nm, and t2 can be in the range of 0.5 nm to 15 nm. The lateral spatial mode of the guide light wave in the left optical phase modulator 106 is vertically constrained by these waveguide core structures 12L and 14L (which have a greater refractive index than the relatively thick SiO2 cladding structures 16 and 18) and laterally constrained by the width W0 of the ridge of the lower waveguide core structure 14L. The right optical phase modulator 108 includes a SISCAP structure, which includes a corresponding structure comprising an upper waveguide core structure 12R formed by a lightly doped p-type portion of the upper silicon layer, a lower waveguide core structure 14R formed by a lightly doped n-type portion of the lower silicon layer, and an insulating layer between them.

[0083] In this example, the lower cladding structure 18 is a buried oxide (BOX) layer of a silicon-on-insulator (SiI) integrated circuit, which includes a thick silicon substrate 20, the BOX cladding structure 18, and a thin silicon layer on top of the BOX cladding structure 18. The thin silicon layer can be used to form portions of the lower waveguide core structures 14L and 14R, while other SiO2 and silicon (e.g., polysilicon) layers on top form the upper waveguide core structures 12L and 12R and the SiO2 cladding structure 16 between and above the other structures.

[0084] These fabrication steps include doping portions of the upper waveguide core structure with dopants that provide a specific conductivity type (using n-type dopants to make electrons the majority carrier type, or using p-type dopants to make holes the majority carrier type), and doping portions of the lower waveguide core structure with dopants that provide a conductivity type opposite to that of the upper waveguide core structure. For example, to achieve a waveguide core structure with electrons as the majority charge carrier type (or electron conductivity type), n-type dopants or impurities can be used to provide donor electrons. To achieve a waveguide core structure with holes as the majority charge carrier type (or hole conductivity type), p-type dopants or impurities can be used as electron acceptors. The waveguide core structure can be doped with relatively light concentrations of dopants (p-type for structures 12L and 12R, and n-type for structures 14L and 14R). For example, light doping helps reduce optical losses associated with propagating light waves. Portions with heavier doping concentrations may also exist to provide access to electrical contacts on the surface of the cladding structure 16.

[0085] Cross-section 10 shows a moderately concentrated p-type doped portion 22L adjacent to the upper waveguide core structure 12L, having a higher doping concentration than the upper waveguide core structure 12L, and a heavily concentrated p-type doped portion 24L adjacent to portion 22L, having a higher doping concentration than portion 22L. The heavy doping concentration is useful for forming electrical connections with the metal via and contact structure 26L. Similarly, there is a moderately concentrated n-type doped portion 32L adjacent to the lower waveguide core structure 14L, having a higher doping concentration than the lower waveguide core structure 14L, and a heavily concentrated n-type doped portion 34L adjacent to portion 32L, having a higher doping concentration than portion 32L. Portion 34L is also connected to the metal via and contact structure 36L.

[0086] The corresponding doped portions 22R, 24R, 32R, and 34R used for electrical connection to the metal vias and contact structures 26R and 36R are included on the right side of the right SISCAP structure of the right optical phase modulator 108 associated with the upper waveguide core structure 12R and the lower waveguide core structure 14R.

[0087] The width of the lightly doped portion of the lower waveguide core structure 14L may extend beyond the ridge width W0 by an additional width W1, and the moderately doped portion 32L may have a width W2 that provides a suitable buffer before reaching the heavily doped portion 34L. In some embodiments, these widths may be selected to have values ​​within the following exemplary ranges: for example, W0 may be in the range of 250 nm to 500 nm, W1 may be in the range of 100 nm to 1000 nm, and W2 may be in the range of 400 nm to 2000 nm.

[0088] The separation distance S between the left and right waveguide core structures of the left and right optical phase modulators 106, 108 can be selected such that the light waves guided in the left core structures 12L, 14L are separated from the light waves guided in the right core structures 12R, 14R. For example, S can be selected such that the centers of the lateral spatial modes guided in the two waveguides 102, 104 are separated, and the lateral spatial modes of the light waves have minimal overlap, which reduces any residual coupling (e.g., evanescent coupling) between the two waveguides 102, 104 that may cause undesirable crosstalk in the optical device. For example, for the size range and associated lateral spatial mode size described above, a minimum value of about 5 μm for S can be used to reduce potential crosstalk. In some embodiments, the separation distance S can be smaller (e.g., 2 μm or 1 μm) and crosstalk can still be limited to an acceptable level. Alternatively, in some embodiments, the separation distance can be larger (e.g., 10 μm or more). In some examples, S is in the range of 1 μm to 50 μm. In some examples, S is in the range of 2 μm to 20 μm.

[0089] A portion of a SiO2 cladding structure 16 is formed (e.g., deposited or grown) between the doped upper waveguide core structure 12L and the lower waveguide core structure 14L to serve as an insulating layer 110L for the active regions of the SISCAP structure that overlaps with the optical modes guided by the waveguide core structures and the surrounding cladding. For the left SISCAP structure (of the left optical phase modulator 106), adjacent doped portions extend to the left from these active regions, and for the right SISCAP structure (of the right optical phase modulator 108), adjacent doped portions extend to the right from these active regions. This allows the waveguides 102, 104 of the two adjacent optical phase modulators to be closer to each other without the need for electrical contacts on opposite sides of the two SISCAP structures.

[0090] A pair of electrical contacts on structures 26L and 36L allows an electrical signal (e.g., a voltage signal) to be applied to the left SISCAP structure of the left optical phase modulator 106. The charge distribution and corresponding carrier distribution associated with the SISCAP structure can be adjusted by changing the voltage applied between the electrical contacts on structures 26L and 36L. As the carrier distribution changes, the refractive index of the active region also changes, which alters the effective refractive index associated with the light wave propagating in waveguide 102, thereby modulating the optical phase of the light wave.

[0091] Similarly, a pair of electrical contacts of structures 26R and 36R are electrically coupled to the upper waveguide core structure 12R and the lower waveguide core structure 14R, respectively, so that an electrical signal (e.g., a voltage signal) can be applied to the right SISCAP structure of the right optical phase modulator 108. The charge distribution and corresponding carrier distribution associated with the SISCAP structure can be adjusted by adjusting the voltage applied between the electrical contacts of structures 26R and 36R. As the carrier distribution changes, the refractive index of the active region also changes, which alters the effective refractive index associated with the light wave propagating in waveguide 104, thereby modulating the optical phase of the light wave.

[0092] Figure 1BThis is a top view of an example optical device including a dual-waveguide optical phase modulator 100. Input waveguide 120 is coupled to a Y-coupler (or Y-branch) 122, which is coupled to the input ends of waveguides 102 and 104. The output ends of waveguides 102 and 104 are coupled to a Y-coupler (or Y-branch) 124, which is coupled to an output waveguide 126. Input light wave 128 propagating in input waveguide 120 is separated by Y-coupler 122 to propagate along waveguides 102 and 104. A modulator control unit (not shown) sends modulation control signals to metal contacts 26L and 36L to modulate the phase of the light wave propagating in waveguide 102. The modulator control unit sends modulation control signals to metal contacts 26R and 36R to modulate the phase of the light wave propagating in waveguide 104. The modulated optical waves in waveguides 102 and 104 are recombine at Y-coupler 124 to generate a modulated output signal 130 propagating along output waveguide 126. In this example, the moderately concentrated n-type doped portion 32L and the heavily concentrated n-type doped portion 34L are lower than the moderately concentrated p-type doped portion 22L and the heavily concentrated p-type doped portion 24L, respectively, and are not shown in the figure. Similarly, the moderately concentrated n-type doped portion 32R and the heavily concentrated n-type doped portion 34R are lower than the moderately concentrated p-type doped portion 22R and the heavily concentrated p-type doped portion 24R, respectively, and are not shown in the figure.

[0093] Figure 2A-2I Various alternative configurations for adjacent SISCAP structures are shown, which still enable adjacent waveguides to provide separate optical modes, which can be part of a device that uses relative optical phase modulation in adjacent arms (e.g., an interferometer such as MZI). Figures 2A to 2I A cross-sectional view of a dual-waveguide configuration is shown, where the cross-sectional plane is perpendicular to the waveguide's propagation axis (z-in front of page), similar to... Figure 1A , 1B Examples are shown in the text. Figure 2A It shows the corresponding Figure 1A , 1B Examples of waveguide geometry for 200 and 202.

[0094] Figure 2B An example of waveguide pair 204, 206 is shown. Figure 2A The waveguide is a vertically flipped version of 200 and 202, in which the ridge of the waveguide core structure is on the upper waveguide core structure instead of the lower waveguide core structure.

[0095] Figure 2C Examples of waveguide pairs 208 and 210 are shown, with Figure 2AThe example is similar, but the upper waveguide core structures are connected to form a continuous upper waveguide core structure 212. Lightly doped portions of the semiconductor material forming the upper waveguide core structure extend across the separation distance. In this example, even though the upper waveguide core structure 212 extends across the two waveguides 208, 210, because the lower waveguide core structures are separated, there is still minimal overlap between the lateral spatial modes of the light waves propagating in the waveguides 208, 210. This reduces any residual coupling (e.g., evanescent coupling) between the two waveguides 208 and 210.

[0096] Figure 2D An example of waveguide pair 214, 216 is shown. Figure 2C The waveguides shown are vertically flipped versions of 208 and 210.

[0097] Figure 2E Examples of waveguide pairs 218 and 220 are shown, with Figure 2A The example is similar, but the lower waveguide core structures are connected to form a continuous lower waveguide core structure 222. The lightly doped portion of the semiconductor material forming the lower ridge waveguide core structure extends across the separation distance to form a continuous lower ridge waveguide core structure 224.

[0098] Figure 2F An example of waveguide pair 226, 228 is shown. Figure 2E The waveguides shown are vertically flipped versions of 218 and 220.

[0099] Figure 2G Examples of waveguide pairs 230 and 232 are shown, wherein the upper waveguide core structure includes a ridge, and the lower waveguide core structure also includes a ridge. The depth of the ridge in the lower waveguide core structure may be the same as or different from the depth of the ridge in the upper waveguide core structure. The width of the ridge in the lower waveguide core structure may be the same as or different from the width of the ridge in the upper waveguide core structure.

[0100] Figure 2H Examples of waveguide pairs 234 and 236 are shown, wherein the upper waveguide core structure includes a ridge, and the lower waveguide core structure forms a continuous lower waveguide core structure including the ridge. The depth of the ridge in the upper waveguide core structure may be the same as or different from the depth of the ridge in the lower waveguide core structure. The width from the left edge of the upper left ridge of the upper waveguide core structure to the right edge of the upper right ridge may be the same as or different from the width of the ridge in the lower waveguide core structure.

[0101] Figure 2I An example of waveguide pair 238, 240 is shown. Figure 2H The waveguides shown are vertically flipped versions of 234 and 236.

[0102] Figure 3An example of a fabrication process 300 for manufacturing a dual-waveguide optical phase modulator is shown. Process 300 includes providing a substrate (302).

[0103] Process 300 includes forming (304) an optical phase-shifting structure for phase-shifting a first light wave and a second light wave of two or more light waves. The optical phase-shifting structure includes a first layer over a substrate and comprising a first semiconductor material including first doped regions exhibiting a first conductivity type. The optical phase-shifting structure includes a second layer over the substrate and separated from the first layer, the second layer comprising a second semiconductor material including second doped regions exhibiting a second conductivity type opposite to the first conductivity type.

[0104] Process 300 includes forming (306) at least one ridge of the corresponding semiconductor material in at least one of the first or second layers, the at least one ridge extending along the depth axis into a portion of the volume between the first and second layers.

[0105] Process 300 includes forming (308) segments of dielectric material in at least one of the first or second layers that separate the two portions of their respective doped regions across a transverse axis to separate the first light wave from the second light wave.

[0106] These manufacturing steps can be performed in any order.

[0107] While this disclosure has been described in conjunction with certain embodiments, it should be understood that this disclosure is not limited to the disclosed embodiments, but rather is intended to cover various modifications and equivalent arrangements included within the scope of the appended claims, which should be interpreted in the broadest possible sense to cover all such modifications and equivalent structures permitted by law. For example, various types of input coupling structures can be used to couple optical waveguides 102 and 104 to an input waveguide, and various types of output coupling structures can be used to couple optical waveguides 102 and 104 to an output waveguide. For example, left waveguide 102 and right waveguide 104 do not necessarily have to extend in a straight line along the propagation axis, and may also be bent along a plane perpendicular to the depth axis (x), or in other configurations.

[0108] Although the invention is defined in the appended claims, it should be understood that the invention may also be defined according to the following set of embodiments:

[0109] Example 1: An integrated photonic device configured to operate on paired optical waves, the integrated photonic device comprising:

[0110] Base; and

[0111] An optical phase-shifting structure for shifting the phase of a first light wave and a second light wave among two or more light waves, the optical phase-shifting structure comprising:

[0112] A first layer, above the substrate, includes a first semiconductor material, the first semiconductor material including a first doped region exhibiting a first conductivity type, and

[0113] The second layer, above the substrate and separated from the first layer, comprises a second semiconductor material, the second semiconductor material including a second doped region exhibiting a second conductivity type opposite to the first conductivity type;

[0114] Wherein, at least one of the first layer or the second layer includes at least one ridge of its respective semiconductor material, the at least one ridge extending along a depth axis into a portion of the volume between the first layer and the second layer; and

[0115] Wherein, at least one of the first layer or the second layer includes a segment of dielectric material that separates two portions of its respective doped region across a horizontal axis to separate the first light wave from the second light wave, wherein the horizontal axis is perpendicular to the depth axis.

[0116] Example 2: The integrated photonic device according to Example 1 further includes a third layer, which comprises the dielectric material between at least a portion of the volume between the first layer and the second layer.

[0117] Example 3: The integrated photonic device according to Example 2 further includes:

[0118] The first electrode is a portion of the first doped region on a first side of the segment that contacts the dielectric material;

[0119] The second electrode is a portion of the second doped region on the first side of the segment that contacts the dielectric material;

[0120] The third electrode is a portion of the first doped region on the second side of the segment contacting the dielectric material; and

[0121] The fourth electrode is a portion of the second doped region on the second side of the segment that contacts the dielectric material;

[0122] Example 4: The integrated photonic device according to Example 3, wherein the first layer is on top of the second layer, and the portion of the second doped region on the first side of the dielectric material segment extends further from the dielectric material segment along the transverse axis than the portion of the first doped region on the first side of the dielectric material segment.

[0123] Example 5: The integrated photonic device according to Example 4, wherein the portion of the second doped region on the second side of the dielectric material segment extends further along the transverse axis from the dielectric material segment than the portion of the first doped region on the second side of the dielectric material segment.

[0124] Example 6: The integrated photonic device according to any one of Examples 2 to 5 further includes a fourth layer between the substrate and the first layer, the fourth layer comprising the dielectric material.

[0125] Example 7: The integrated photonic device according to Example 6, wherein the fourth layer includes a buried oxide layer of a silicon-on-insulator (SOI) integrated circuit.

[0126] Example 8: The integrated photonic device according to Example 6 or 7, wherein the dielectric material segment contacts the fourth layer.

[0127] Example 9: The integrated photonic device according to Example 8, wherein the first layer and the second layer each include a segment of the dielectric material that separates two portions of their respective doped regions across the horizontal axis, so as to separate the peak of the optical spatial mode of the first light wave from the peak of the optical spatial mode of the second light wave.

[0128] Example 10: The integrated photonic device according to Example 9, wherein the segment of the first layer and the segment of the second layer each contact the third layer.

[0129] Example 11: The integrated photonic device according to any one of Examples 6 to 10 further includes a fifth layer, which includes the dielectric material on both the first layer and the second layer.

[0130] Example 12: An integrated photonic device according to any one of Examples 1 to 11, wherein a segment of dielectric material separates a first ridge of the first semiconductor material of the first layer from a second ridge of the first semiconductor material of the first layer, the first ridge extending along the propagation axis to provide a first waveguide portion to guide the optical spatial mode of the first light wave, and the second ridge extending along the propagation axis to provide a second waveguide portion to guide the optical spatial mode of the second light wave.

[0131] Example 13: The integrated photonic device according to Example 12, wherein the first waveguide portion and the second waveguide portion are configured to form portions of corresponding arms of an interference structure.

[0132] Example 14: The integrated photonic device according to Example 13, wherein the interference structure includes at least a portion of a Mach-Zehnder interferometer.

[0133] Example 15: An integrated photonic device according to any one of Examples 12 to 14, wherein each of the first waveguide portion and the second waveguide portion includes a semiconductor-insulator-semiconductor capacitor (SISCAP).

[0134] Example 16: An integrated photonic device according to any one of Examples 1 to 15, wherein the size of the dielectric material segment separating the two portions of their respective doped regions across the horizontal axis is between about 1 micrometer and 50 micrometers.

[0135] Example 17: The integrated photonic device according to Example 16, wherein the size of the dielectric material segment separating the two parts of its respective doped region across the horizontal axis is between about 2 micrometers and 20 micrometers.

[0136] Example 18: An integrated photonic device according to any one of Examples 1 to 17, wherein different portions of the first doped region have different concentrations of dopant, and different portions of the second doped region have different concentrations of dopant.

[0137] Example 19: A method for manufacturing an integrated photonic device configured to operate in pairs of light waves, the method comprising:

[0138] Provide a base;

[0139] An optical phase-shifting structure is formed for shifting the phase of a first light wave and a second light wave in two or more light waves, the optical phase-shifting structure comprising:

[0140] A first layer, above the substrate, includes a first semiconductor material, the first semiconductor material including a first doped region exhibiting a first conductivity type, and

[0141] The second layer, above the substrate and separated from the first layer, comprises a second semiconductor material, the second semiconductor material including a second doped region exhibiting a second conductivity type opposite to the first conductivity type;

[0142] At least one ridge of a respective semiconductor material is formed in at least one of the first layer or the second layer, the at least one ridge extending along the depth axis into a portion of the volume between the first layer and the second layer; and

[0143] In at least one of the first or second layers, a segment of dielectric material is formed across the horizontal axis to separate the two portions of their respective doped regions in order to separate the first light wave from the second light wave, wherein the horizontal axis is perpendicular to the depth axis.

[0144] Example 20: The method according to Example 19 includes forming a third layer between at least a portion of the volume between the first layer and the second layer, wherein the third layer includes the dielectric material.

[0145] Example 21: The method according to Example 20 further includes:

[0146] A first electrode is formed, wherein the first electrode contacts a portion of the first doped region on a first side of a segment of the dielectric material;

[0147] A second electrode is formed, the second electrode contacting a portion of the second doped region on the first side of the segment of the dielectric material;

[0148] A third electrode is formed, the third electrode contacting a portion of the first doped region on a second side of the segment of the dielectric material; and

[0149] A fourth electrode is formed, wherein the fourth electrode contacts a portion of the second doped region on the second side of the segment of the dielectric material;

[0150] Example 22: According to the method of Example 21, wherein the first layer is on top of the second layer, and the portion of the second doped region on the first side of the dielectric material segment extends further from the dielectric material segment along the transverse axis than the portion of the first doped region on the first side of the dielectric material segment.

[0151] Example 23: According to the method of Example 22, the portion of the second doped region on the second side of the dielectric material segment extends further along the transverse axis from the dielectric material segment than the portion of the first doped region on the second side of the dielectric material segment.

[0152] Example 24: The method according to any one of Examples 20 to 23 further includes forming a fourth layer between the substrate and the first layer, wherein the fourth layer comprises the dielectric material.

[0153] Example 25: According to the method of Example 24, the fourth layer includes a buried oxide layer of a silicon-on-insulator (SOI) integrated circuit.

[0154] Example 26: The method according to Example 24 or 25, wherein the segment of the dielectric material contacts the fourth layer.

[0155] Example 27: According to the method of Example 26, wherein the first layer and the second layer each include a segment of the dielectric material that separates two portions of their respective doped regions across the horizontal axis, so as to separate the peak of the optical spatial mode of the first light wave from the peak of the optical spatial mode of the second light wave.

[0156] Example 28: According to the method described in Example 27, wherein the segment of the first layer and the segment of the second layer each contact the third layer.

[0157] Example 29: The method according to any one of Examples 24 to 28 further includes forming a fifth layer on both the first layer and the second layer, wherein the fifth layer includes the dielectric material.

[0158] Example 30: The method according to any one of Examples 19 to 29, wherein the segment of the dielectric material separates a first ridge of the first semiconductor material of the first layer from a second ridge of the first semiconductor material of the first layer, the first ridge extending along the propagation axis to provide a first waveguide portion to guide the optical spatial mode of the first light wave, and the second ridge extending along the propagation axis to provide a second waveguide portion to guide the optical spatial mode of the second light wave.

[0159] Example 31: The method according to Example 30 includes forming the corresponding arms of the interference structure using the first waveguide portion and the second waveguide portion.

[0160] Example 32: The method according to Example 31 includes forming a Mach-Zehnder interferometer containing the interference structure.

[0161] Example 33: The method according to any one of Examples 30 to 32, wherein each of the first waveguide portion and the second waveguide portion comprises a semiconductor-insulator-semiconductor capacitor (SISCAP).

[0162] Example 34: The method according to any one of Examples 19 to 33, wherein the size of the dielectric material segment separating the two portions of its respective doped region across the horizontal axis is between about 1 micrometer and 50 micrometers.

[0163] Example 35: According to the method of Example 34, the size of the dielectric material segment that separates the two parts of its respective doped region across the horizontal axis is between about 2 micrometers and 20 micrometers.

[0164] Example 36: The method according to any one of Examples 19 to 35, wherein different portions of the first doped region have different concentrations of dopant, and different portions of the second doped region have different concentrations of dopant.

[0165] Example 37: An apparatus comprising:

[0166] A dual-waveguide optical phase modulator includes a first waveguide and a second waveguide, wherein each of the first waveguide and the second waveguide comprises:

[0167] A first waveguide core structure and a second waveguide core structure, wherein at least one of the first waveguide core structure or the second waveguide core structure includes a ridge.

[0168] Example 38: The apparatus according to Example 37, wherein the first waveguide and the second waveguide extend along the propagation direction, and

[0169] The first waveguide core structure and the second waveguide core structure are spaced apart in a depth direction perpendicular to the propagation direction.

[0170] Example 39: The apparatus according to Example 38, wherein the first waveguide core structure includes a first semiconductor material, the first semiconductor material includes a first doped region exhibiting a first conductivity type, and the second waveguide core structure includes a second semiconductor material, the second semiconductor material includes a second doped region exhibiting a second conductivity type opposite to the first conductivity type.

[0171] Example 40: The apparatus according to Example 39, wherein each of the first waveguide and the second waveguide includes a dielectric material disposed between the first waveguide core structure and the second waveguide core structure.

[0172] Example 41: The apparatus according to any one of Examples 37 to 40, wherein the first waveguide and the second waveguide extend along the propagation direction, and the first waveguide core structure of the first waveguide is spaced apart from the first waveguide core structure of the second waveguide in a transverse direction perpendicular to the propagation direction.

[0173] Example 42: The apparatus according to Example 41, wherein the first waveguide core structure includes the ridge.

[0174] Example 43: The apparatus according to Example 42, wherein the second waveguide core structure includes the ridge.

[0175] Example 44: The apparatus according to Example 42, wherein the second waveguide core structure does not include a ridge.

[0176] Example 45: The apparatus according to Example 41, wherein the second waveguide core structure includes the ridge, and the first waveguide core structure does not include the ridge.

[0177] Example 46: According to the apparatus of Example 41, wherein the second waveguide core structure of the first waveguide and the second waveguide core structure of the second waveguide form a continuous waveguide core structure.

[0178] Example 47: The apparatus according to Example 41, wherein the second waveguide core structure of the first waveguide is spaced apart from the second waveguide core structure of the second waveguide in a transverse direction perpendicular to the propagation direction.

[0179] Example 48: The apparatus according to any one of Examples 41 to 47, wherein the first waveguide core structure of each of the first waveguide and the second waveguide includes a first semiconductor material, the first semiconductor material including a first doped region exhibiting a first conductivity type, and

[0180] The dual-waveguide optical phase modulator includes a segment of dielectric material disposed between the first waveguide core structure of the first waveguide and the first waveguide core structure of the second waveguide.

[0181] Example 49: The apparatus according to Example 48, wherein the segments of the dielectric material are configured to separate the peak of the optical spatial mode of a first light wave propagating in the first waveguide from the peak of the optical spatial mode of a second light wave propagating in the second waveguide.

[0182] Example 50: The apparatus according to Example 48 or 49, wherein the second waveguide core structure of each of the first waveguide and the second waveguide includes a second semiconductor material, the second semiconductor material including a second doped region exhibiting a second conductivity type opposite to the first conductivity type, and

[0183] The dual-waveguide optical phase modulator includes a segment of dielectric material disposed between the second waveguide core structure of the first waveguide and the second waveguide core structure of the second waveguide.

[0184] Example 51: The apparatus according to Example 48 or 49, wherein the second waveguide core structure of the first waveguide and the second waveguide core structure of the second waveguide form a continuous waveguide core structure and include a second semiconductor material, the second semiconductor material including a second doped region exhibiting a second conductivity type opposite to the first conductivity type.

[0185] Example 52: The apparatus according to any one of Examples 48 to 51, comprising:

[0186] The first electrode pair, the first waveguide core structure and the second waveguide core structure electrically coupled to the first waveguide, and

[0187] The second electrode pair is electrically coupled to the first waveguide core structure and the second waveguide core structure of the second waveguide.

[0188] The first electrode pair is disposed on a first side in the lateral direction relative to the dielectric material, and the second electrode pair is disposed on a second side in the lateral direction relative to the dielectric material.

[0189] Example 53: The device according to any one of Examples 37 to 52 includes a substrate, wherein a first waveguide core structure is formed in a first layer above the substrate, a second waveguide core structure is formed in a second layer above the substrate, and the first layer is above the second layer.

[0190] Example 54: The apparatus according to any one of Examples 37 to 53, wherein each of the first waveguide and the second waveguide comprises a semiconductor-insulator-semiconductor capacitor (SISCAP).

[0191] Example 55: The apparatus according to any one of Examples 48 to 54, wherein the dielectric material segment separates a first ridge of the first waveguide and a second ridge of the second waveguide, the first ridge extending along the propagation direction of the first waveguide to provide a first waveguide portion to guide an optical spatial mode of a first light wave propagating in the first waveguide, and the second ridge extending along the propagation direction of the second waveguide to provide a second waveguide portion to guide an optical spatial mode of a second light wave propagating in the second waveguide.

[0192] Example 56: The apparatus according to any one of Examples 37 to 55 includes an interference structure, wherein the first waveguide and the second waveguide are configured to form portions of corresponding arms of the interference structure.

[0193] Example 57: The apparatus according to Example 56 includes a Mach-Zehnder interferometer comprising the interference structure.

[0194] Example 58: The apparatus according to any one of Examples 48 to 57, wherein the dielectric material segment is configured to separate the first waveguide core structure of the first waveguide from the first waveguide core structure of the second waveguide at a distance in the range of 1 micrometer to 50 micrometers.

[0195] Example 59: According to the apparatus of Example 58, wherein the segments of dielectric material are configured to separate the first waveguide core structure of the first waveguide from the first waveguide core structure of the second waveguide at a distance in the range of 2 micrometers to 20 micrometers.

[0196] Example 60: The apparatus according to any one of Examples 48 to 59, wherein different portions of the first doped region have different concentrations of dopant.

[0197] Example 61: The apparatus according to any one of Examples 50 to 60, wherein different portions of the second doped region have different concentrations of dopant.

[0198] Example 62: The apparatus according to any one of Examples 37 to 61, wherein, in a plane perpendicular to the propagation direction of the first waveguide and the second waveguide, the first waveguide is symmetrical about the second waveguide with respect to the centerline between the first waveguide and the second waveguide.

[0199] Example 63: The apparatus according to any one of Examples 37 to 61, wherein the first waveguide is symmetrical about the second waveguide with respect to the plane between the first waveguide and the second waveguide.

[0200] Example 64: A system comprising:

[0201] Processor unit, comprising:

[0202] A light source configured to provide multiple light outputs;

[0203] A plurality of optical modulators coupled to the light source and the first unit, the plurality of optical modulators being configured to generate an optical input vector comprising a plurality of optical signals by modulating the plurality of light outputs provided by the light source based on a plurality of modulator control signals; and

[0204] A matrix multiplication unit coupled to the plurality of optical modulators, the matrix multiplication unit being configured to convert the optical input vector into an output vector based on a plurality of weight control signals;

[0205] At least one of the optical modulators includes an integrated photonic device according to any one of Embodiments 1 to 18, or an apparatus according to any one of Embodiments 37 to 63, or an integrated photonic device manufactured according to any one of Embodiments 19 to 36.

[0206] Example 65: The system according to Example 64, wherein each of the optical modulators comprises an integrated photonic device according to any one of Examples 1 to 18, or an apparatus according to any one of Examples 37 to 63, or an integrated photonic device manufactured according to any one of Examples 19 to 36.

[0207] Example 66: An optical processor comprising a plurality of optical modulators, wherein at least one of the optical modulators comprises an integrated photonic device according to any one of Examples 1 to 18, or an apparatus according to any one of Examples 37 to 63, or an integrated photonic device manufactured according to any one of Examples 19 to 36.

[0208] Example 67: An optical processor according to Example 66, wherein each of the plurality of optical modulators comprises an integrated photonic device according to any one of Examples 1 to 18, or an apparatus according to any one of Examples 37 to 63, or an integrated photonic device manufactured according to any one of Examples 19 to 36.

[0209] Example 68: A system comprising at least one of a robot, an autonomous vehicle, an autonomous drone, a medical diagnostic system, a fraud detection system, a weather forecasting system, a financial forecasting system, a facial recognition system, a voice recognition system, or a product defect detection system.

[0210] Among them, at least one of the robot, autonomous vehicle, autonomous drone, medical diagnostic system, fraud detection system, weather forecast system, financial detection system, facial recognition system, voice recognition system or product defect detection system includes an integrated photonic device according to any one of embodiments 1 to 18, or an apparatus according to any one of embodiments 37 to 63, or an integrated photonic device manufactured according to any one of embodiments 19 to 36.

Claims

1. An integrated photonic device configured to operate on paired optical waves, the integrated photonic device comprising: Base; as well as An optical phase-shifting structure for shifting the phase of a first light wave and a second light wave in two or more light waves, the optical phase-shifting structure comprising: A first layer, above the substrate, includes a first semiconductor material, the first semiconductor material including a first doped region exhibiting a first conductivity type, and The second layer, above the substrate and separated from the first layer, comprises a second semiconductor material, the second semiconductor material including a second doped region exhibiting a second conductivity type opposite to the first conductivity type; Wherein, at least one of the first layer or the second layer includes at least one ridge of its respective semiconductor material, the at least one ridge extending along a depth axis into a portion of the volume between the first layer and the second layer; and In this embodiment, at least one of the first or second layers includes a segment of dielectric material that separates two portions of its respective doped region across a horizontal axis to separate the first light wave from the second light wave, wherein the horizontal axis is perpendicular to the depth axis. The integrated photonic device further includes a third layer, located between at least a portion of the volume between the first and second layers, the third layer comprising the dielectric material. The integrated photonic device also includes: The first electrode is a portion of the first doped region on a first side of the segment that contacts the dielectric material; The second electrode contacts a portion of the second doped region on the first side of the segment of the dielectric material.

2. The integrated photonic device according to claim 1, further comprising: The third electrode is a portion of the first doped region on the second side of the segment that contacts the dielectric material. as well as The fourth electrode is a portion of the second doped region on the second side of the segment that contacts the dielectric material.

3. The integrated photonic device of claim 2, wherein the first layer is on top of the second layer, and the portion of the second doped region on the first side of the dielectric material segment extends further from the dielectric material segment along the transverse axis than the portion of the first doped region on the first side of the dielectric material segment.

4. The integrated photonic device of claim 3, wherein the portion of the second doped region on the second side of the dielectric material segment extends further along the transverse axis from the dielectric material segment than the portion of the first doped region on the second side of the dielectric material segment.

5. The integrated photonic device of claim 1 further comprises a fourth layer between the substrate and the first layer, the fourth layer comprising the dielectric material.

6. The integrated photonic device of claim 5, wherein the fourth layer comprises a buried oxide layer of a silicon-on-insulator (SOI) integrated circuit.

7. The integrated photonic device of claim 5, wherein the dielectric material segment contacts the fourth layer.

8. The integrated photonic device according to claim 7, wherein, The first layer and the second layer each include a segment of the dielectric material that separates two portions of their respective doped regions across the horizontal axis, so as to separate the peak of the optical spatial mode of the first light wave from the peak of the optical spatial mode of the second light wave.

9. The integrated photonic device of claim 8, wherein the segment of the first layer and the segment of the second layer each contact the third layer.

10. The integrated photonic device of claim 5 further comprises a fifth layer, which includes the dielectric material on both the first layer and the second layer.

11. The integrated photonic device according to any one of claims 1 to 10, wherein a segment of the dielectric material separates a first ridge of the first semiconductor material of the first layer from a second ridge of the first semiconductor material of the first layer, the first ridge providing a first waveguide portion to guide the optical spatial mode of the first light wave, and the second ridge providing a second waveguide portion to guide the optical spatial mode of the second light wave.

12. The integrated photonic device of claim 11, wherein the first waveguide portion and the second waveguide portion are configured to form portions of corresponding arms of an interference structure.

13. The integrated photonic device of claim 12, wherein the interference structure comprises at least a portion of a Mach-Zehnder interferometer.

14. The integrated photonic device of claim 11, wherein each of the first waveguide portion and the second waveguide portion comprises a semiconductor-insulator-semiconductor capacitor (SISCAP).

15. The integrated photonic device according to any one of claims 1 to 10, wherein the size of the dielectric material segment separating the two portions of their respective doped regions across the horizontal axis is between 1 micrometer and 50 micrometers.

16. The integrated photonic device of claim 15, wherein the size of the dielectric material segment separating the two portions of their respective doped regions across the horizontal axis is between 2 micrometers and 20 micrometers.

17. The integrated photonic device according to any one of claims 1 to 10, wherein different portions of the first doped region have different concentrations of dopant, and different portions of the second doped region have different concentrations of dopant.

18. A method for manufacturing an integrated photonic device configured to operate in pairs of light waves, the method comprising: Provide a base; An optical phase-shifting structure is formed for shifting the phase of a first light wave and a second light wave in two or more light waves, the optical phase-shifting structure comprising: A first layer, above the substrate, includes a first semiconductor material, the first semiconductor material including a first doped region exhibiting a first conductivity type, and The second layer, above the substrate and separated from the first layer, comprises a second semiconductor material, the second semiconductor material including a second doped region exhibiting a second conductivity type opposite to the first conductivity type; At least one ridge of a respective semiconductor material is formed in at least one of the first layer or the second layer, the at least one ridge extending along a depth axis into a portion of the volume between the first layer and the second layer; and A segment of dielectric material is formed in at least one of the first or second layers, separating two portions of their respective doped regions across a horizontal axis to separate the first light wave from the second light wave, wherein the horizontal axis is perpendicular to the depth axis. The method further includes forming a third layer between at least a portion of the volume between the first and second layers, wherein the third layer comprises the dielectric material. The method further includes: A first electrode is formed, wherein the first electrode contacts a portion of the first doped region on a first side of a segment of the dielectric material; A second electrode is formed, which contacts a portion of the second doped region on the first side of the segment of the dielectric material.

19. The method of claim 18, further comprising: A third electrode is formed, the third electrode contacting a portion of the first doped region on a second side of the segment of the dielectric material; as well as A fourth electrode is formed, which contacts a portion of the second doped region on the second side of the segment of the dielectric material.

20. The method of claim 19, wherein the first layer is on top of the second layer, and the portion of the second doped region on the first side of the dielectric material segment extends further from the dielectric material segment along the transverse axis than the portion of the first doped region on the first side of the dielectric material segment.

21. The method of claim 20, wherein the portion of the second doped region on the second side of the segment of the dielectric material extends further along the transverse axis from the segment of the dielectric material than the portion of the first doped region on the second side of the segment of the dielectric material.

22. The method of claim 18, further comprising forming a fourth layer between the substrate and the first layer, wherein the fourth layer comprises the dielectric material.

23. The method of claim 22, wherein the fourth layer comprises a buried oxide layer of a silicon-on-insulator (SOI) integrated circuit.

24. The method of claim 22, wherein the segment of the dielectric material contacts the fourth layer.

25. The method according to claim 24, wherein, The first layer and the second layer each include a segment of the dielectric material that separates two portions of their respective doped regions across the horizontal axis, so as to separate the peak of the optical spatial mode of the first light wave from the peak of the optical spatial mode of the second light wave.

26. The method of claim 25, wherein the segment of the first layer and the segment of the second layer each contact the third layer.

27. The method of claim 22, further comprising forming a fifth layer over both the first layer and the second layer, wherein the fifth layer comprises the dielectric material.

28. The method according to any one of claims 18 to 27, wherein the segment of the dielectric material separates a first ridge of the first semiconductor material of the first layer from a second ridge of the first semiconductor material of the first layer, the first ridge providing a first waveguide portion to guide the optical spatial mode of the first light wave, and the second ridge providing a second waveguide portion to guide the optical spatial mode of the second light wave.

29. The method of claim 28, further comprising using the first waveguide portion and the second waveguide portion to form portions of corresponding arms of an interference structure.

30. The method of claim 29, comprising forming a Mach-Zehnder interferometer including the interference structure.

31. The method of claim 28, wherein each of the first waveguide portion and the second waveguide portion comprises a semiconductor-insulator-semiconductor capacitor (SISCAP).

32. The method according to any one of claims 18 to 27, wherein the size of the dielectric material segment separating the two portions of its respective doped region across the horizontal axis is between 1 micrometer and 50 micrometers.

33. The method of claim 32, wherein the size of the dielectric material segment that separates the two portions of its respective doped region across the horizontal axis is between 2 micrometers and 20 micrometers.

34. The method according to any one of claims 18 to 27, wherein different portions of the first doped region have different concentrations of dopant, and different portions of the second doped region have different concentrations of dopant.

35. An optical device, comprising: A dual-waveguide silicon-insulator-silicon capacitor type optical phase modulator includes a first waveguide and a second waveguide, wherein each of the first waveguide and the second waveguide comprises: A first waveguide core structure and a second waveguide core structure, wherein at least one of the first waveguide core structure or the second waveguide core structure includes a ridge. Each of the first waveguide and the second waveguide includes a dielectric material disposed between the first waveguide core structure and the second waveguide core structure.

36. The optical device of claim 35, wherein the first waveguide and the second waveguide extend along the propagation direction, and The first waveguide core structure and the second waveguide core structure are spaced apart in a depth direction perpendicular to the propagation direction.

37. The optical device of claim 36, wherein the first waveguide core structure comprises a first semiconductor material, the first semiconductor material comprising a first doped region exhibiting a first conductivity type, and the second waveguide core structure comprises a second semiconductor material, the second semiconductor material comprising a second doped region exhibiting a second conductivity type opposite to the first conductivity type.

38. The optical device according to any one of claims 35 to 37, wherein the first waveguide and the second waveguide extend along a propagation direction, and the first waveguide core structure of the first waveguide is spaced apart from the first waveguide core structure of the second waveguide in a transverse direction perpendicular to the propagation direction.

39. The optical device of claim 38, wherein the first waveguide core structure includes the ridge.

40. The optical device of claim 39, wherein the second waveguide core structure includes the ridge.

41. The optical device of claim 39, wherein the second waveguide core structure does not include a ridge.

42. The optical device of claim 38, wherein the second waveguide core structure includes the ridge, and the first waveguide core structure does not include the ridge.

43. The optical device according to claim 38, wherein the second waveguide core structure of the first waveguide and the second waveguide core structure of the second waveguide form a continuous waveguide core structure.

44. The optical device of claim 38, wherein the second waveguide core structure of the first waveguide is spaced apart from the second waveguide core structure of the second waveguide in a transverse direction perpendicular to the propagation direction.

45. The optical device of claim 38, wherein the first waveguide core structure of each of the first waveguide and the second waveguide comprises a first semiconductor material, the first semiconductor material comprising a first doped region exhibiting a first conductivity type, and in, The dual-waveguide silicon-insulator-silicon capacitor type optical phase modulator includes a segment of dielectric material disposed between the first waveguide core structure of the first waveguide and the first waveguide core structure of the second waveguide.

46. ​​The optical device of claim 45, wherein the segments of the dielectric material are configured to separate the peaks of the optical spatial mode of a first light wave propagating in the first waveguide from the peaks of the optical spatial mode of a second light wave propagating in the second waveguide.

47. The optical device of claim 45, wherein the second waveguide core structure of each of the first waveguide and the second waveguide comprises a second semiconductor material, the second semiconductor material comprising a second doped region exhibiting a second conductivity type opposite to the first conductivity type, and in, The dual-waveguide silicon-insulator-silicon capacitor type optical phase modulator includes a segment of dielectric material disposed between the second waveguide core structure of the first waveguide and the second waveguide core structure of the second waveguide.

48. The optical device of claim 45, wherein the second waveguide core structure of the first waveguide and the second waveguide core structure of the second waveguide form a continuous waveguide core structure, and include a second semiconductor material, the second semiconductor material including a second doped region exhibiting a second conductivity type opposite to the first conductivity type.

49. The optical device according to claim 45, comprising: The first electrode pair, the first waveguide core structure and the second waveguide core structure electrically coupled to the first waveguide, and The second electrode pair is electrically coupled to the first waveguide core structure and the second waveguide core structure of the second waveguide. The first electrode pair is disposed on a first side in the lateral direction relative to the dielectric material, and the second electrode pair is disposed on a second side in the lateral direction relative to the dielectric material.

50. The optical device according to any one of claims 35 to 37, comprising a substrate, wherein the first waveguide core structure is formed in a first layer above the substrate, the second waveguide core structure is formed in a second layer above the substrate, and the first layer is above the second layer.

51. The optical device according to any one of claims 35 to 37, wherein each of the first waveguide and the second waveguide comprises a semiconductor-insulator-semiconductor capacitor (SISCAP).

52. The optical device of claim 45, wherein the dielectric material segment separates a first ridge of the first waveguide and a second ridge of the second waveguide, the first ridge extending along the propagation direction of the first waveguide to provide a first waveguide portion for guiding an optical spatial mode of a first light wave propagating in the first waveguide, and the second ridge extending along the propagation direction of the second waveguide to provide a second waveguide portion for guiding an optical spatial mode of a second light wave propagating in the second waveguide.

53. The optical device according to any one of claims 35 to 37, comprising an interference structure, wherein the first waveguide and the second waveguide are configured to form portions of corresponding arms of the interference structure.

54. The optical device of claim 53, comprising a Mach-Zehnder interferometer including the interference structure.

55. The optical device of claim 45, wherein the dielectric material segment is configured to separate the first waveguide core structure of the first waveguide from the first waveguide core structure of the second waveguide at a distance ranging from 1 micrometer to 50 micrometers.

56. The optical device of claim 55, wherein the dielectric material segment is configured to separate the first waveguide core structure of the first waveguide from the first waveguide core structure of the second waveguide at a distance ranging from 2 micrometers to 20 micrometers.

57. The optical device of claim 45, wherein different portions of the first doped region have different concentrations of dopant.

58. The optical device of claim 47, wherein different portions of the second doped region have different concentrations of dopant.

59. The optical device according to any one of claims 35 to 37, wherein, On a plane perpendicular to the propagation directions of the first and second waveguides, the first waveguide is symmetrical about the second waveguide with respect to the centerline between the first and second waveguides.

60. The optical device according to any one of claims 35 to 37, wherein the first waveguide is symmetrical about the second waveguide with respect to the plane between the first waveguide and the second waveguide.

61. An optical system comprising: Processor unit, comprising: A light source configured to provide multiple light outputs; A plurality of optical modulators coupled to the light source and the first unit, the plurality of optical modulators being configured to generate an optical input vector comprising a plurality of optical signals by modulating the plurality of light outputs provided by the light source based on a plurality of modulator control signals; and A matrix multiplication unit coupled to the plurality of optical modulators, the matrix multiplication unit being configured to convert the optical input vector into an output vector based on a plurality of weight control signals; At least one of the optical modulators includes an integrated photonic device according to any one of claims 1 to 10, an optical device according to any one of claims 35 to 37, or an integrated photonic device manufactured by the method according to any one of claims 18 to 27.

62. The optical system of claim 61, wherein each of the optical modulators comprises the integrated photonic device of claim 1.

63. An optical processor comprising a plurality of optical modulators, wherein at least one of the optical modulators comprises an integrated photonic device according to any one of claims 1 to 10, or an optical device according to any one of claims 35 to 37, or an integrated photonic device manufactured by the method according to any one of claims 18 to 27.

64. The optical processor of claim 63, wherein each of the plurality of optical modulators comprises the integrated photonic device of claim 1.

65. An optical system comprising at least one of a robot, autonomous vehicle, autonomous drone, medical diagnostic system, fraud detection system, weather forecasting system, financial forecasting system, facial recognition system, voice recognition system, or product defect detection system. in, At least one of the following includes an integrated photonic device according to any one of claims 1 to 10, an optical device according to any one of claims 35 to 37, or an integrated photonic device manufactured by the method according to any one of claims 18 to 27: a robot, an autonomous vehicle, an autonomous drone, a medical diagnostic system, a fraud detection system, a weather forecasting system, a financial detection system, a facial recognition system, a voice recognition system, or a product defect detection system: an integrated photonic device according to any one of claims 1 to 10.

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