Stage apparatus, lithographic apparatus and article manufacturing method

Abstract

The present disclosure relates to a stage apparatus, a lithographic apparatus, and an article manufacturing method. A stage apparatus for holding a substrate includes a substrate holding unit including a holding surface that holds the substrate, a driving mechanism configured to transfer the substrate to the holding surface, and a control unit configured to decide a driving curve of the driving mechanism in a height direction of the substrate based on warping information about warping of the substrate measured when the substrate is supported by a support surface smaller than the holding surface, so that the substrate is transferred to the holding surface while correcting the warping of the substrate.

Description

Technical Field

[0001] This invention relates to stage equipment, photolithography equipment, and methods for manufacturing articles. Background Technology

[0002] To manufacture various devices such as semiconductor devices or liquid crystal display elements, an exposure apparatus has been used that illuminates a subject (mask or template) via an illumination optics system and projects the pattern of the subject onto a substrate (wafer) via a projection optics system. When transferring the substrate to a chuck (substrate holding member) or when the chuck holds the substrate to transfer the pattern onto the substrate while holding it in the chuck, the exposure apparatus needs to reduce substrate deformation. Related technology is disclosed in Japanese Patent Application Publication No. 2001-60618. For example, Japanese Patent Application Publication No. 2001-60618 discloses a technique for reducing substrate (surface) deformation by providing a roughness absorbing member in the chuck, thereby holding (holding) the substrate with satisfactory flatness even if the substrate has a rough lower surface.

[0003] However, in conventional technology, if the substrate is warped, the warped substrate will be stuck when the substrate is transferred to the chuck (substrate holding member), which will cause the substrate to deform. Summary of the Invention

[0004] The present invention provides a stage device that facilitates holding a substrate with high flatness.

[0005] According to a first aspect of the present invention, a stage device for holding a substrate is provided, comprising: a substrate holding unit including a holding surface for holding the substrate; a drive mechanism configured to transfer the substrate to the holding surface; and a control unit configured to determine a drive curve of the drive mechanism driving the substrate in the height direction of the substrate based on warp information about substrate warp measured when the substrate is supported by a support surface smaller than the holding surface, such that the substrate is transferred to the holding surface while the warp of the substrate is corrected.

[0006] According to a second aspect of the invention, a photolithography apparatus for forming patterns on a substrate is provided, comprising the aforementioned stage apparatus configured to hold the substrate.

[0007] According to a third aspect of the present invention, a method for manufacturing an article is provided, comprising: forming a pattern on a substrate using the aforementioned photolithography apparatus, processing the substrate on which the pattern is formed in the forming step, and manufacturing an article from the processed substrate.

[0008] Other aspects of the invention will become apparent from the following description of exemplary embodiments with reference to the accompanying drawings. Attached Figure Description

[0009] Figure 1 This is a schematic diagram illustrating the configuration of an exposure apparatus according to one aspect of the present invention.

[0010] Figure 2 This is a plan view showing the chuck configuration from above.

[0011] Figures 3A to 3D This is a view used to illustrate the transfer of the substrate between the pin member and the chuck.

[0012] Figure 4A and Figure 4B This is a view used to illustrate the problems that occur when transferring the substrate from the pin member to the chuck.

[0013] Figure 5A and 5B This is a view used to explain in detail the determination of the driving curve according to the embodiment.

[0014] Figure 6 This is a schematic diagram illustrating the configuration of an exposure apparatus according to one aspect of the present invention. Detailed Implementation

[0015] In the following description, embodiments will be given in detail with reference to the accompanying drawings. Note that the following embodiments are not intended to limit the scope of the claimed invention. Multiple features are described in the embodiments, but there is no limitation requiring all of these features, and multiple features can be appropriately combined. Furthermore, in the drawings, the same reference numerals are given the same or similar constructions, and redundant descriptions are omitted.

[0016] Figure 1 This is a schematic diagram illustrating the configuration of an exposure apparatus 1 according to one aspect of the present invention. The exposure apparatus 1 is a photolithography apparatus used in a photolithography step, which is a device manufacturing step. In this embodiment, the exposure apparatus 1 forms a pattern on a substrate by exposing the substrate via a projection optics system. The exposure apparatus 1 includes an illumination optics system 11, a component stage 12, a projection optics system 13, a substrate stage 14, a substrate transport system 15, a chuck 20, a measurement unit 24, and a control unit 25.

[0017] The illumination optics system 11 illuminates the original (mask or mask plate) R held by the original stage 12 with light (exposure light) from a light source (not shown). The projection optics system 13 projects the light from the original R onto the substrate W held by the substrate stage 14. The substrate transport system 15 has the function of transporting the substrate W and includes, for example, a supply robot 16 for supplying the substrate W to the substrate stage 14 and a recovery robot 17 for recovering the substrate W from the substrate stage 14.

[0018] The substrate stage 14 is a movable stage that holds the substrate W. The substrate stage 14 includes a micro-motion stage 18 and a coarse-motion stage 19. On the micro-motion stage 18, a chuck 20 is arranged to hold the substrate W by adsorbing its lower surface. The chuck 20 is a substrate holding member that includes an adsorption surface (holding surface) 20A for adsorbing (holding) the substrate W.

[0019] The micro-motion stage 18 is configured to move independently along each of the X, Y, and Z directions, and to rotate independently about an axis parallel to each of the X, Y, and Z directions. Note that, as Figure 1 As shown, the X, Y, and Z axes are defined in mutually orthogonal directions. The laser interferometer 21 and plane mirror 22 serve as measuring devices for measuring the position of the micro-motion stage 18. The position of the micro-motion stage 18 can be obtained from the result (the displacement of the micro-motion stage 18) acquired by the laser interferometer 21. By moving the micro-motion stage 18, the position of the substrate W can be adjusted along the optical axis AX (Z direction) of the projection optical system 13 and in directions perpendicular to the optical axis AX (X and Y directions).

[0020] The pin member 23 is a holding member used to receive the substrate W from the supply robot 16, transfer the substrate W to the recovery robot 17, and hold the substrate W by adsorbing its lower surface. The pin member 23 is arranged (fixed to) the coarse movement stage 19 and is configured to protrude from the chuck 20 in the Z direction (perpendicular to the adsorption surface 20A of the chuck 20) ​​via a hole formed in the chuck 20.

[0021] The coarse stage 19 is configured to move separately along each of the X and Y directions and to rotate about an axis parallel to the Z direction. The position of the coarse stage 19 is measured by, for example, a laser interferometer and a plane mirror or gap sensor, and is controlled synchronously with the movement of the fine stage 18 via an actuator such as a linear motor. As described above, the pin member 23 is fixed to the coarse stage 19 and thus moves with the coarse stage 19.

[0022] The coarse stage 19 can move a long distance in the X and Y directions within the range defined by the limit sensor (not shown). On the other hand, the fine stage 18 is supported by the coarse stage 19 and can move in the X and Y directions with a shorter distance than that of the coarse stage 19.

[0023] The measuring unit 24 measures the position of the chuck 20 relative to the Z direction. The measuring unit 24 is formed, for example, by a laser interferometer and a plane mirror or gap sensor, but the invention is not limited thereto. Any configuration is possible as long as the position of the chuck 20 can be measured.

[0024] The control unit 25 is formed by a computer including a CPU and memory, and controls the entire exposure apparatus 1 (operation) according to a program stored in the memory. The control unit 25 controls the various units of the exposure apparatus 1 so that the pattern of the original R is transferred to each exposure area of ​​the substrate W according to the exposure sequence or exposure array defined in the process. When supplying or recovering the substrate W, the control unit 25 controls the process of transferring the substrate W held by the chuck 20 to the pin member 23 or the process of transferring the substrate W held by the pin member 23 to the chuck 20 via the micro-motion stage 18.

[0025] In the exposure process of transferring the pattern of the original R onto the substrate W, the substrate W is exposed while the chuck 20 holds the substrate W in place, and the micro-motion stage 18 is moved. In order to recover the exposed substrate W, the substrate W held by the chuck 20 is transferred to the pin member 23 by moving the micro-motion stage 18 downward (in the -Z direction) without interfering with the recovery robot 17, and then the pin member 23 holds the substrate W.

[0026] A ventilation line (not shown) for providing adsorption force to the adsorption chuck 20 is provided in the micro-motion stage 18, which holds the chuck 20 by the lower surface of the adsorption chuck 20. In addition, a ventilation line 26 for providing adsorption force to the substrate W placed on the chuck 20 is also provided in the micro-motion stage 18.

[0027] Ventilation line 26 is formed such that a vacuum pump 27 for generating negative pressure communicates with ventilation holes 201 formed in the chuck 20. The vacuum pump 27 discharges gas (air) inside the ventilation line 26 to the outside, causing the pressure in the ventilation line 26 to fall below atmospheric pressure, i.e., reaching negative pressure. When the ventilation line 26 (the pressure in the ventilation line 26) is set to negative pressure, each ventilation hole 201 communicating with the ventilation line 26 (the pressure in each ventilation hole 201) is also set to negative pressure. When the pressure difference between the negative pressure and atmospheric pressure is applied to the surface of the substrate W placed on the ventilation hole 201 (including the chuck 20 of the ventilation hole 201), the chuck 20 can attract (hold) the substrate W.

[0028] A regulator 28 is provided between the vacuum pump 27 and the vent 201 to regulate the internal pressure (vacuum pressure) of the ventilation line 26. A solenoid valve 29 is located between the regulator 28 and the vent 201. By opening / closing (switching) the solenoid valve 29, the state in which the ventilation line 26 on the vent 201 side is connected to the vacuum pump 27 via the solenoid valve 29 or the state in which the ventilation line 26 is open to the atmosphere can be set. The solenoid valve 29 can be controlled by a control unit 25.

[0029] Pressure sensor 30 is positioned between solenoid valve 29 and vent 201 at a branch point from ventilation line 26. Pressure sensor 30 measures the pressure value in ventilation line 26 and outputs the measurement result (notification) to control unit 25.

[0030] As described above, the pin components 23 are arranged in the coarse motion stage 19 and are all tubular, i.e., hollow. Ventilation lines 31 are provided in the pin components 23 to provide adsorption force to the substrate W placed on the pin components 23.

[0031] Ventilation duct 31 is formed to connect the vacuum pump 32, used to generate negative pressure, to the interior (space) of pin member 23. The vacuum pump 32 discharges gas (air) from inside the ventilation duct 31 to the outside, causing the pressure in the ventilation duct 31 to fall below atmospheric pressure, i.e., reaching negative pressure. When the ventilation duct 31 (pressure within the ventilation duct 31) is set to negative pressure, each pin member 23 connected to the ventilation duct 31 (pressure within each pin member 23) is also set to negative pressure. When the pressure difference between the negative pressure and atmospheric pressure is applied to the surface of the substrate W placed on the pin member 23, the pin member 23 can attract (hold) the substrate W.

[0032] A regulator 33, used to adjust the internal pressure (vacuum pressure) of the ventilation duct 31, is disposed between the vacuum pump 32 and the pin member 23. A solenoid valve 34 is disposed between the regulator 33 and the pin member 23. By opening / closing (switching) the solenoid valve 34, the state in which the ventilation duct 31 on the pin member 23 side is connected to the vacuum pump 32 via the solenoid valve 34 or the state in which the ventilation duct 31 is open to the atmosphere can be set. The solenoid valve 34 can be controlled by the control unit 25.

[0033] Pressure sensor 35 is positioned between solenoid valve 34 and pin member 23 at a branch point from ventilation duct 31. Pressure sensor 35 measures the pressure value in ventilation duct 31 and outputs the measurement result to control unit 25.

[0034] This embodiment illustrates an exposure apparatus 1 comprising two vacuum pumps 27 and 32, but the invention is not limited thereto. For example, the two vacuum pumps 27 and 32 can be configured as a single common vacuum pump. Alternatively, a vacuum pump can be configured for each pin member 23 or each vent 201 of the chuck 20.

[0035] Reference Figure 2 Describe the detailed configuration of chuck 20. Figure 2This is a plan view showing the configuration of the chuck 20 from above. The chuck 20 includes a plurality of pins for supporting the substrate W, and the substrate W is placed on the plurality of pins. Thus, the plurality of pins disposed in the chuck 20 define an adsorption surface 20A for holding the substrate W. The chuck 20 includes dikes 202 and 203 for preventing gas (air) from flowing out of the chuck 20 during adsorption (vacuum adsorption) of the substrate W. The dikes 202 and 203 are formed such that their uppermost surfaces are almost on the same plane.

[0036] By operating the vacuum pump 27 while placing the substrate W on the multiple pins provided in the chuck 20, the pressure in the ventilation line 26 communicating with the ventilation hole 201 is set to negative. This sets the space between the substrate W and the multiple pins in a vacuum state via the ventilation hole 201 in the inner region of the dike 202 and the outer region of the dike 203, so that the chuck 20 can hold the substrate W with a uniform force.

[0037] As described above, a hole (through hole) 204 for allowing the pin member 23 to protrude is formed in the chuck 20. Similarly, a hole (through hole) for allowing the pin member 23 to protrude is also formed in the micro-motion stage 18. Therefore, the micro-motion stage 18 can move in the protruding direction of the pin member 23 (i.e., in the Z direction) without interfering with the pin member 23.

[0038] This embodiment has described a structure including three pin members 23, but the invention is not limited thereto. The number of pin members 23 can be arbitrary, as long as the substrate W (relative to its size, material, and mass) can be sufficiently and stably held. Note that each pin member 23 has an area (adsorption area) for adsorbing the lower surface of the substrate W, which is equal to the area within the embankment 203; therefore, the adsorption area of ​​the substrate W is smaller than that of the chuck 20.

[0039] Furthermore, this embodiment illustrates a configuration in which the chuck 20 vacuum-adsorbs the substrate W, but the invention is not limited thereto. For example, the chuck 20 can be formed as an electrostatic chuck, which adsorbs the substrate W by the Coulomb force generated between the substrate W and the electrodes by the applied voltage.

[0040] In this embodiment, such as Figure 1 As shown, the exposure apparatus 1 includes an acquisition unit 40, which acquires warp information related to the warp of the substrate W. The substrate W is transferred from a substrate loading / unloading position (transfer position, such as a wafer transfer cassette, coating / developing machine, or in-line) to the acquisition unit 40 via a substrate transfer unit. In this embodiment, the acquisition unit 40 measures the warp of the substrate W, thereby acquiring warp information about the warp in advance (before the substrate stage 14 holds the substrate W). The substrate W is then transferred from the acquisition unit 40 to the substrate stage 14 via the substrate transfer system 15, more specifically via the supply robot 16, and held by the substrate stage 14.

[0041] In this embodiment, as described above, the acquisition unit 40 has the function of measuring the warp of the substrate W, and includes, for example, a stage 41, a laser displacement meter 42, and a processing unit 43.

[0042] The stage 41 is a support member including a support surface 41A, which supports (holds) the substrate W placed on the support surface 41A. Since the area of ​​the support surface 41A of the stage 41 is smaller than the area of ​​the adsorption surface 20A of the chuck 20, the stage 41 can support the substrate W with a less constraining force than the chuck 20. Therefore, the constrained state of the substrate W supported by the support surface 41A of the stage 41 is weaker than the constrained state of the substrate W held by the adsorption surface 20A of the chuck 20.

[0043] The laser displacement meter 42 is a measuring unit disposed above the stage 41, measuring the position of the substrate W, supported by the support surface 41A of the stage 41, in the height direction (Z direction). The laser displacement meter 42 determines the height level of the substrate W (its upper surface) by illuminating the substrate W with a laser beam and forming an image of the light reflected from the substrate W by a sensor. In this embodiment, the position of the laser displacement meter 42 is fixed. Therefore, when the substrate W is supported by the support surface 41A relative to the laser displacement meter 42, the height level of the entire substrate W is determined by rotatably driving the stage 41.

[0044] This embodiment assumes that multiple laser displacement gauges 42 are provided above the stage 41. However, the number of laser displacement gauges 42 is not limited to this, and only one laser displacement gauge 42 may be provided. The measuring unit for measuring the position of the substrate W supported by the support surface 41A of the stage 41 in the height direction is not limited to the laser displacement gauge 42, and may be, for example, a line sensor. The position of the substrate W in the height direction can be measured by a contact measuring device using a dial indicator or an optical flat.

[0045] Processing unit 43 is a unit including a CPU and memory that identifies the shape of substrate W, more specifically, the warpage of substrate W. Processing unit 43 acquires warpage information by identifying the warpage of substrate W based on the position of substrate W in the height direction (i.e., the overall height level of substrate W) measured by laser displacement meter 42. Processing unit 43 identifies the warpage shape and warpage amplitude of substrate W as the warpage of substrate W based on the overall height level of substrate W. Therefore, the warpage information includes information indicating the warpage shape of substrate W and information indicating the warpage amplitude of substrate W. The warpage shape of substrate W includes a dome shape, i.e., a shape that bulges downwards or upwards. A downwardly bulging shape is a shape in which the outer peripheral portion of substrate W warps relative to the center portion of substrate W in the +Z direction and bulges downwards relative to the adsorption surface 20A of chuck 20. An upwardly bulging shape is a shape in which the outer peripheral portion of substrate W warps relative to the center portion of substrate W in the -Z direction and bulges upwards relative to the adsorption surface 20A of chuck 20. However, the warping shape of the substrate W is not limited to a downward or upward convex shape, but includes saddle shape, tunnel shape and many other shapes, and the processing unit 43 can identify any shape as the warping shape of the substrate W.

[0046] As described above, the acquisition unit 40 acquires warp information about the warp of the substrate W, measured when the substrate W is supported by a support surface 41A of a stage 41 smaller than the adsorption surface 20A of the chuck 20. Note that in this embodiment, the stage 41 supporting the substrate W via the support surface 41A is rotatably driven relative to the laser displacement meter 42 to determine the overall height level of the substrate W. However, the stage 41 supporting the substrate W via the support surface 41A can be driven in both the X and Y directions. Alternatively, the height of the entire substrate W can be determined by rotatably driving the laser displacement meter 42 relative to the stage 41A supporting the substrate W via the support surface 41A, or by driving the laser displacement meter 42 in both the X and Y directions.

[0047] In this embodiment, the warpage of the substrate W is measured while the substrate W is supported by the stage 41 (support surface 41A). However, the invention is not limited to this. For example, as long as the substrate W is supported (held) by a surface smaller than the adsorption surface 20A of the chuck 20, the warpage of the substrate W can be measured while the substrate W is held by the supply robot 16 or the pre-alignment unit. Alternatively, by providing a laser displacement meter 42 above the substrate stage 14, the warpage of the substrate W can be measured while the substrate W is held by the pin member 23.

[0048] This embodiment has illustrated a configuration for obtaining warpage information by measuring the warpage of the substrate W inside the exposure apparatus 1. However, warpage information can also be obtained by measuring the warpage of the substrate W outside the exposure apparatus 1. In this case, the acquisition unit 40 acquires warpage information about the warpage of the substrate W from an external measuring device that measures the warpage of the substrate W supported by a surface smaller than the adsorption surface 20A of the chuck 20.

[0049] In this embodiment, the warp of the substrate W is actually measured to obtain warp information about the substrate W, but the warp of the substrate W can be predicted. For example, when the substrate W is adsorbed by the stage 41, the pin member 23, or the stage of an external measuring device, the warp of the substrate W can be predicted based on the characteristics of the change in adsorption pressure. In this case, since a measuring device for measuring the warp of the substrate W is not required, the configuration for obtaining warp information can be simplified. If a parameter representing the warp shape of the substrate W is obtained in advance, warp information about the warp of the substrate W can be obtained by providing this parameter to the acquisition unit 40.

[0050] Reference Figure 3A , 3B The 3C and 3D descriptions describe the process of transferring the substrate W, which is adsorbed (held) by the pin member 23, to the chuck 20 and adsorbed by the adsorption surface 20A of the chuck 20. This process is performed when the control unit 25 comprehensively controls the various units of the exposure equipment 1.

[0051] First, the substrate stage 14 moves in the X and Y directions (horizontal direction) and is positioned where the supply robot 16 can supply the substrate W. Then, the substrate W is transferred from the supply robot 16 to the pin member 23, and the pin member 23 holds the substrate W, as if... Figure 3A As shown.

[0052] Next, as Figure 3B As shown, the micro-motion stage 18 moves (lifts) along the +Z direction at a first speed, so that the substrate W adsorbed by the pin member 23 is located near the chuck 20. In this way, the micro-motion stage 18 serves as a drive unit that drives the chuck 20 and the pin member 23 relative to each other in the protruding direction (Z direction) of the pin member 23, so as to change the relative positional relationship between the chuck 20 (adsorption surface 20A) and the pin member 23.

[0053] Next, the micro-motion stage 18 moves in the +Z direction at a second speed lower than the first speed to a position where the lower surface of the substrate W adsorbed by the pin member 23 contacts the adsorption surface 20A of the chuck 20. When the micro-motion stage 18 moves at the second speed, each vent 201 formed in the chuck 20 is set to negative pressure to generate negative pressure (adsorption force) between the substrate W and the adsorption surface 20A before the substrate W contacts the adsorption surface 20A.

[0054] Figure 3C The diagram illustrates a state in which the lower surface of the substrate W, which is adsorbed by the pin member 23, is also adsorbed by the adsorption surface 20A, thus the substrate W is adsorbed by both the pin member 23 and the chuck 20. By simultaneously adsorbing the substrate W by the pin member 23 and the chuck 20, positional deviations caused by transferring the substrate W from the pin member 23 to the chuck 20 can be reduced (prevented).

[0055] Next, as Figure 3D As shown, by further moving the micro-motion stage 18 along the +Z direction, the pin member 23 releases the substrate W from its adsorption. This sets the substrate W to a state where it is only adsorbed (held) by the chuck 20 (adsorption surface 20A), and then the substrate W is transferred from the pin member 23 to the chuck 20.

[0056] In this embodiment, the substrate W is transferred from the pin member 23 to the chuck 20 by moving the micro-motion stage 18 (chuck 20) ​​in the +Z direction. However, the invention is not limited thereto. For example, the substrate W can be transferred from the pin member 23 to the chuck 20 by moving (lowering) the pin member 23 in the -Z direction. Alternatively, the substrate W can be transferred from the pin member 23 to the chuck 20 by moving the pin member 23 and the micro-motion stage 18 (chuck 20) ​​relative to each other in the Z direction.

[0057] As described above, in this embodiment, the pin member 23 and the micro-motion stage 18, which moves the chuck 20 in the Z direction (i.e., serves as a drive unit for relative driving of the chuck 20 and the pin member 23), form a drive mechanism for transferring the substrate W to the chuck 20. Note that, as described above, the unit that moves the pin member 23 in the Z direction can replace the micro-motion stage 18 as the drive unit for relative driving of the chuck 20 and the pin member 23. Alternatively, in addition to the micro-motion stage 18, the unit that moves the pin member 23 in the Z direction can be used as the drive unit for relative driving of the chuck 20 and the pin member 23.

[0058] Reference Figure 4A and 4B This describes a problem that occurs when the warped substrate W is transferred from the pin member 23 to the chuck 20. For example, such as... Figure 4A As shown, if the warped shape of the substrate W is a downwardly convex shape, the chuck 20 (adsorption surface 20A) begins to adsorb the substrate W from its center portion, and then adsorbs the remaining portion of the substrate W. Through the adsorption force of the chuck 20, the substrate W is forced to become almost flat relative to the adsorption surface 20A, but adsorption begins from the center portion of the substrate W, thus causing deformation of the substrate W. On the other hand, as... Figure 4BAs shown, if the warped shape of the substrate W is an upward convex shape, the chuck 20 begins to pick up the substrate W from the outer periphery of the substrate, and then picks up the remaining portion of the substrate W. Therefore, deformation of the substrate W occurs, similar to the case where the warped shape of the substrate W is a downward convex shape.

[0059] If the substrate W warps, a portion of the substrate W will first contact the adsorption surface 20A of the chuck 20. Due to the small contact area and high surface pressure, the adsorption surface 20A is easily scratched (damaged).

[0060] When the substrate W is transferred from the pin member 23 to the chuck 20, each vent 201 formed in the chuck 20 is set to negative pressure, thereby generating negative pressure between the substrate W and the chuck 20. In addition, the air pressure applied by the movement (movement speed) of the micro-motion stage 18 generates positive pressure between the substrate W and the chuck 20.

[0061] In this embodiment, based on the warp information (i.e., the shape and magnitude of the warp of the substrate W) acquired by the acquisition unit 40, the control unit 25 determines (controls) the drive curve of the micro-motion stage 18 driving the substrate W when transferring the substrate W from the pin member 23 to the chuck 20. For example, when transferring the substrate W from the pin member 23 to the chuck 20, the control unit 25 determines (changes) the speed (moving speed) of the micro-motion stage 18 as the drive curve, so that the substrate W is transferred to the adsorption surface 20A of the chuck 20, while the warp of the substrate W is corrected. In this way, by controlling the speed of the micro-motion stage 18 when transferring the substrate W from the pin member 23 to the chuck 20 based on the warp information about the warp of the substrate W, the air pressure (pressure between the substrate W and the chuck 20) ​​applied by the movement of the micro-motion stage 18 is changed.

[0062] Reference Figure 5A and 5B The description provides a practical example of determining a drive curve such that the speed of the micro-motion stage 18 changes according to the warping shape of the substrate W when transferring the substrate W from the pin member 23 to the chuck 20.

[0063] For example, such as Figure 5AAs shown, if the warped shape of the substrate W is a downwardly convex shape, the drive curve is determined such that the speed of the micro-motion stage 18 is higher than a predetermined speed when the substrate W is transferred from the pin member 23 to the chuck 20. Therefore, the positive pressure generated by the movement of the micro-motion stage 18 is greater than the negative pressure generated by the adsorption of the chuck 20 (adsorption surface 20A), resulting in a positive pressure between the substrate W and the chuck 20. Thus, when the substrate W, warped in a downwardly convex shape, is held (adsorbed) by the pin member 23, a positive pressure is generated below the substrate W, thereby suppressing warping of the substrate W. In other words, the substrate W can be transferred from the pin member 23 to the adsorption surface 20A of the chuck 20 while correcting the warping of the substrate W. Note that the predetermined speed is the default speed of the micro-motion stage 18 when the substrate W is transferred from the pin member 23 to the chuck 20 if the substrate W's shape is flat.

[0064] like Figure 5B As shown, if the warped shape of the substrate W is an upwardly convex shape, the drive curve is determined such that the speed of the micro-motion stage 18 is lower than a predetermined speed when transferring the substrate W from the pin member 23 to the chuck 20. Therefore, the positive pressure generated by the movement of the micro-motion stage 18 is less than the negative pressure generated by the adsorption of the chuck 20 (adsorption surface 20A), so the pressure between the substrate W and the chuck 20 is negative. Therefore, when the substrate W, which is warped in an upwardly convex shape, is held (adsorbed) by the pin member 23, a negative pressure is generated below the substrate W, thereby suppressing the warping of the substrate W. In other words, the substrate W can be transferred from the pin member 23 to the adsorption surface 20A of the chuck 20 while the warping of the substrate W is corrected.

[0065] The drive curve is preferably determined such that, in addition to the warpage shape of the substrate W, the speed of the micro-motion stage 18 changes according to the warpage amplitude of the substrate W when transferring the substrate W from the pin member 23 to the chuck 20. This can further suppress the warpage of the substrate W and transfer the substrate W from the pin member 23 to the adsorption surface 20A of the chuck 20 while further correcting the warpage of the substrate W.

[0066] For example, if the warpage shape of the substrate W is a downward convex shape, the drive curve is determined such that the greater the warpage of the substrate W, the higher the speed of the micro-motion stage 18 when transferring the substrate W from the pin member 23 to the chuck 20. Therefore, the greater the warpage of the substrate W, the greater the positive pressure between the substrate W and the chuck 20, and thus the warpage of the substrate W can be corrected (suppressed) according to the warpage amplitude. In other words, the substrate W can be transferred from the pin member 23 to the adsorption surface 20A of the chuck 20 while correcting the warpage of the substrate W more effectively.

[0067] On the other hand, if the warped shape of the substrate W is an upwardly convex shape, the drive curve is determined such that the greater the warping amplitude of the substrate W, the lower the speed of the micro-motion stage 18 when transferring the substrate W from the pin member 23 to the chuck 20. Therefore, the greater the warping amplitude of the substrate W, the greater the negative pressure between the substrate W and the chuck 20, and thus the warping of the substrate W can be corrected (suppressed) according to the warping amplitude of the substrate W. In other words, the substrate W can be transferred from the pin member 23 to the adsorption surface 20A of the chuck 20 while correcting the warping of the substrate W more effectively.

[0068] As described above, by using the micro-motion stage 18 to correct the warping of the substrate W while simultaneously adsorbing (holding) the substrate W on the adsorption surface 20A of the chuck 20, deformation of the substrate W can be reduced. It can also suppress scratching (damage) of the adsorption surface 20A caused when a portion of the substrate W first contacts the adsorption surface 20A of the chuck 20.

[0069] This embodiment has described the case where the warped shape of the substrate W is a dome shape, i.e., a downward or upward convex shape, but the present invention is not limited thereto. Even if the warped shape of the substrate W is saddle-shaped, tunnel-shaped, or any of many other shapes, the speed of the micro-motion stage 18 is appropriately determined (controlled) according to the shape and amplitude of the warping when the substrate W is transferred from the pin member 23 to the chuck 20.

[0070] Note that the relationship between the shape and magnitude of the warp of the substrate W and the speed of the micro-motion stage 18 required to correct the warp of the substrate W is obtained in advance through experiments or simulations. Alternatively, the speed of the micro-motion stage 18 when transferring the substrate W from the pin member 23 to the chuck 20 can be determined using machine learning obtained by accumulating the relationship between the shape and magnitude of the warp of the substrate W and the speed of the micro-motion stage 18 required to correct the warp of the substrate W.

[0071] Note that in this embodiment, the speed of the micro-motion stage 18 is determined as the drive curve when the substrate W is transferred from the pin member 23 to the chuck 20. However, the invention is not limited to this. For example, if the pin member 23 is driven to transfer the substrate W from the pin member 23 to the chuck 20, then the speed of the pin member 23 is determined as the drive curve when the substrate W is transferred from the pin member 23 to the chuck 20. If the micro-motion stage 18 and the pin member 23 are driven to transfer the substrate W from the pin member 23 to the chuck 20, then the speeds of the micro-motion stage 18 and the pin member 23 are determined as the drive curve when the substrate W is transferred from the pin member 23 to the chuck 20.

[0072] like Figure 6As shown, in addition to the vacuum pump 27 that discharges gas from the ventilation line 26 connected to the ventilation holes 201 formed in the chuck 20, the exposure apparatus 1 may also include a pump 51 that supplies gas to the ventilation line 26. In this case, the vacuum pump 27, in cooperation with the ventilation line 26, serves as a suction unit for drawing gas through the adsorption surface 20A of the chuck 20. In cooperation with the ventilation line 26, the pump 51 serves as a blow-out unit that blows gas from the adsorption surface 20A of the chuck 20 toward the substrate W to generate a positive pressure between the substrate W and the chuck 20.

[0073] When the substrate W is transferred from the pin member 23 to the chuck 20 Figure 6 The exposure apparatus 1 shown can generate negative pressure between the substrate W and the chuck 20 by drawing gas from the ventilation hole 201 or by blowing gas out of the ventilation hole 201. Furthermore, as described above, when the substrate W is transferred from the pin member 23 to the chuck 20, positive pressure is generated between the substrate W and the chuck 20 by the air pressure caused by the movement (movement speed) of the micro-motion stage 18.

[0074] To address this issue, based on the warp information acquired by the acquisition unit 40—namely, the shape and magnitude of the warp of the substrate W—the control unit 25 determines (controls) the drive curve of the micro-motion stage 18 driving the substrate W as it is transferred from the pin member 23 to the chuck 20. Furthermore, the control unit 25 controls the vacuum pump 27 and the pump 51 such that the pressure used to draw gas from the vent 201 or the pressure used to blow gas out of the vent 201 varies according to the shape and magnitude of the warp of the substrate W.

[0075] For example, if the warped shape of the substrate W is a downwardly convex shape, the drive curve is determined such that the speed of the micro-motion stage 18 is higher than a predetermined speed when transferring the substrate W from the pin member 23 to the chuck 20, as described above. Furthermore, the vacuum pump 27 is controlled such that the pressure used to draw gas from the vent 201 formed in the chuck 20 is less than a predetermined pressure. Alternatively, instead of reducing the pressure used to draw gas from the vent 201 formed in the chuck 20, the pump 51 is controlled to blow gas out of the vent 201. Therefore, since the pressure obtained by adding the negative pressure generated by the suction of the chuck 20 (adsorption surface 20A) or the positive pressure caused by the gas blowing to the positive pressure generated by the movement of the micro-motion stage 18 is a positive pressure, the pressure between the substrate W and the chuck 20 is a positive pressure. Therefore, when the substrate W, which is warped in a downwardly convex shape, is held (adsorbed) by the pin member 23, a positive pressure is generated below the substrate W, and warping of the substrate W can be suppressed. In other words, the substrate W can be transferred from the pin member 23 to the adsorption surface 20A of the chuck 20 while the warpage of the substrate W is corrected. Note that the predetermined pressure is the default pressure when gas is drawn from the vent 201 formed in the chuck 20, provided that the shape of the substrate W is flat.

[0076] On the other hand, if the warped shape of the substrate W is an upwardly convex shape, the drive curve is determined such that the speed of the micro-motion stage 18 is lower than a predetermined speed when transferring the substrate W from the pin member 23 to the chuck 20, as described above. Furthermore, the vacuum pump 27 is controlled such that the pressure used to draw gas from the vent 201 formed in the chuck 20 is greater than a predetermined pressure. Furthermore, the pump 51 is controlled not to blow gas from the vent 201 formed in the chuck 20. Therefore, since the pressure obtained by adding the negative pressure generated by the suction of the chuck 20 (adsorption surface 20A) and the positive pressure generated by the movement of the micro-motion stage 18 is a negative pressure, the pressure between the substrate W and the chuck 20 is a negative pressure. Therefore, when the substrate W, warped into an upwardly convex shape, is held (adsorbed) by the pin member 23, a negative pressure is generated below the substrate W, and warping of the substrate W can be suppressed. In other words, the substrate W can be transferred from the pin member 23 to the adsorption surface 20A of the chuck 20 while the warping of the substrate W is corrected.

[0077] Vacuum pump 27 and pump 51 are preferably controlled such that the pressure of gas drawn from or blown out of vent 201 varies not only according to the warp shape of substrate W but also according to the warp amplitude of substrate W. This can further suppress warping of substrate W and transfer substrate W from pin member 23 to adsorption surface 20A of chuck 20 while further correcting warping of substrate W.

[0078] For example, if the warpage shape of the substrate W is a downward convex shape, the pressure used for intake gas or exhaust gas is controlled such that when the warpage of the substrate W is large, the positive pressure between the substrate W and the chuck 20 is greater than when the warpage of the substrate W is small. Therefore, the greater the warpage of the substrate W, the greater the positive pressure between the substrate W and the chuck 20, and thus the warpage of the substrate W can be corrected (suppressed) according to the warpage of the substrate W. In other words, the substrate W can be transferred from the pin member 23 to the adsorption surface 20A of the chuck 20 while correcting the warpage of the substrate W more effectively.

[0079] On the other hand, if the warpage shape of the substrate W is an upwardly convex shape, the pressure used to draw in the gas is controlled so that when the warpage of the substrate W is large, the negative pressure between the substrate W and the chuck 20 is greater than when the warpage of the substrate W is small. Therefore, the greater the warpage of the substrate W, the greater the negative pressure between the substrate W and the chuck 20, and thus the warpage of the substrate W can be corrected (suppressed) according to the warpage of the substrate W. In other words, the substrate W can be transferred from the pin member 23 to the adsorption surface 20A of the chuck 20 while correcting the warpage of the substrate W more effectively.

[0080] As described above, the deformation of the substrate W can be reduced by using a vacuum pump 27 and a pump 51 in addition to the micro-motion stage 18 to adsorb (hold) the substrate W on the adsorption surface 20A of the chuck 20 while correcting the warpage of the substrate W. It can also suppress the scratching (damage) of the adsorption surface 20A caused when a part of the substrate W first contacts the adsorption surface 20A of the chuck 20.

[0081] Note that the relationship between the shape and magnitude of the warping of the substrate W, the speed of the micro-motion stage 18 required to correct the warping of the substrate W, and the pressure of the gas drawn from the vent 201 or the pressure of the gas blown out of the vent 201 is obtained in advance through experiments or simulations.

[0082] According to this embodiment, even if the substrate W is warped, the substrate W can be transferred from the pin member 23 to the adsorption surface 20A of the chuck 20, while correcting the warping of the substrate W. Therefore, when the adsorption surface 20A of the chuck 20 holds (adsorbs) the substrate W, the deformation of the substrate W can be reduced, and the substrate W can be held with high flatness.

[0083] Note that this embodiment uses exposure equipment 1 as an example, but a stage device including substrate stage 14 (micro-motion stage 18 and coarse-motion stage 19), pin member 23, control unit 25, ventilation line 26, vacuum pump 27 and pump 51 also constitutes an aspect of the present invention.

[0084] The article manufacturing method according to embodiments of the present invention is advantageous for manufacturing, for example, articles such as devices (e.g., semiconductor elements, magnetic storage media, and liquid crystal display elements). The manufacturing method includes a process of forming a pattern on a substrate using an exposure apparatus 1, a process of processing the substrate on which the pattern has been formed, and a process of manufacturing an article from the processed substrate. Furthermore, the manufacturing method may include other known processes (oxidation, film formation, vapor deposition, doping, planarization, etching, photoresist stripping, dicing, bonding, encapsulation, etc.). Compared to conventional methods, the article manufacturing method according to this embodiment is advantageous in at least one aspect of article performance, quality, productivity, and production cost.

[0085] Note that this invention does not limit the photolithography equipment to exposure equipment, but can also apply it to, for example, imprinting equipment. Imprinting equipment brings a mold (original) and imprinting material supplied (arranged) on a substrate into contact with each other, and applies curing energy to the imprinting material to form a pattern of a cured product (the pattern of the mold has been transferred to the product).

[0086] Although the invention has been described with reference to exemplary embodiments, it should be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims should be given the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.

Claims

1. A stage device for holding a substrate, comprising: A substrate holding unit, which includes a holding surface for holding the substrate; A drive mechanism configured to place the substrate on a holding surface; and The control unit is configured to control the drive mechanism in the height direction based on warp information about substrate warp measured when the substrate is supported by a support surface smaller than the holding surface. The warpage of the substrate is reduced before the substrate is placed on the retaining surface. The drive mechanism includes: A retaining member is configured to protrude from the retaining surface through a hole formed in the substrate retaining unit and to retain the substrate. as well as A driving unit is configured to drive the substrate holding unit and the holding member relative to each other in the protruding direction of the holding member. The control unit controls the speed at which the substrate is placed from the holding member onto the holding surface by relatively driving the substrate holding unit and the holding member via the drive unit. The warpage information includes information representing the warpage shape of the substrate. The control unit controls the drive mechanism so that the speed at which the substrate is placed from the holding member onto the holding surface varies according to the warpage shape of the substrate. If the warped shape of the substrate is a shape that bulges downward relative to the holding surface, the control unit controls the drive mechanism to drive such that the speed at which the substrate is placed from the holding member onto the holding surface is higher than a predetermined speed, and If the warped shape of the substrate is a shape that bulges upward relative to the holding surface, the control unit controls the drive mechanism to drive it so that the speed at which the substrate is placed from the holding member onto the holding surface is lower than a predetermined speed.

2. The platform device according to claim 1, further comprising an acquisition unit configured to acquire the warpage information. in, The control unit controls the pressure in the space between the substrate and the retaining surface to be positive or negative by controlling the drive mechanism in the height direction based on the warpage information.

3. The platform device according to claim 2, wherein the acquisition unit comprises: Including support components for supporting surfaces; A measuring unit is configured to measure the position of a substrate supported by a supporting surface in the height direction; as well as The processing unit is configured to acquire warping information based on the position measured by the measurement unit.

4. The platform device according to claim 2, wherein, The acquisition unit acquires the warping information from outside the platform device.

5. The platform device as described in claim 1, wherein, The predetermined speed is the speed at which the substrate is placed on the holding surface by driving the substrate holding unit and the holding member relative to each other via the driving unit when the substrate shape is flat.

6. The platform device according to claim 1, wherein... Warp information includes information indicating the warp shape of the substrate. The stage device also includes a suction unit configured to draw gas via the holding surface, and The control unit controls the suction unit so that the pressure of the gas used for suction changes according to the warping shape of the substrate.

7. The platform device according to claim 6, wherein... If the warped shape of the substrate is a shape that bulges downward relative to the retaining surface, then the control unit controls the suction unit such that the pressure used to suction the gas is less than a predetermined pressure, and If the warped shape of the substrate is a shape that bulges upward relative to the holding surface, the control unit controls the suction unit to make the pressure used to suction the gas greater than a predetermined pressure.

8. The platform device according to claim 7, wherein, The predetermined pressure is the pressure applied when drawing in gas, assuming the substrate is flat.

9. The platform device according to claim 6, wherein... The warpage information includes information representing the degree of warpage of the substrate, and The control unit controls the suction unit so that the pressure of the gas used for suction changes according to the warping of the substrate.

10. The platform device according to claim 1, wherein... Warp information includes information indicating the warp shape of the substrate. The stage equipment also includes a blowing unit configured to blow gas from the holding surface onto the substrate, and If the warped shape of the substrate is a shape that bulges downward relative to the holding surface, the control unit controls the blowing unit to blow out gas; and if the warped shape of the substrate is a shape that bulges upward relative to the holding surface, the control unit controls the blowing unit not to blow out gas.

11. The platform device according to claim 1, wherein... Warp information includes information indicating the warp shape of the substrate. The stage equipment also includes a blowing unit configured to blow gas from the holding surface onto the substrate, and The control unit controls the blowing unit so that the pressure of the blowing gas changes according to the warp shape of the substrate.

12. A photolithography apparatus for forming a pattern on a substrate, comprising a stage device defined in claim 1 and configured to hold the substrate.

13. A stage device for holding a substrate, comprising: A substrate holding unit, which includes a holding surface for holding the substrate; A drive mechanism configured to place the substrate on a holding surface; and The control unit is configured to control the drive mechanism in the height direction based on warp information about substrate warp measured when the substrate is supported by a support surface smaller than the holding surface. The warpage of the substrate is reduced before the substrate is placed on the retaining surface. The drive mechanism includes: A retaining member is configured to protrude from the retaining surface through a hole formed in the substrate retaining unit and to retain the substrate. as well as A driving unit is configured to drive the substrate holding unit and the holding member relative to each other in the protruding direction of the holding member. The control unit controls the speed at which the substrate is placed from the holding member onto the holding surface by relatively driving the substrate holding unit and the holding member via the drive unit. The warpage information includes information representing the degree of warpage of the substrate. The control unit controls the drive mechanism so that the speed at which the substrate is placed from the holding member onto the holding surface varies according to the degree of warpage of the substrate. If the warped shape of the substrate is a shape that bulges downward relative to the holding surface, the control unit controls the drive mechanism such that the greater the warping amplitude of the substrate, the higher the speed at which the substrate is placed from the holding member onto the holding surface. If the warped shape of the substrate is a shape that bulges upward relative to the holding surface, the control unit controls the drive mechanism such that the speed at which the substrate is placed from the holding member onto the holding surface decreases as the warping amplitude of the substrate increases.

14. A method for manufacturing an article, comprising: The step of forming a pattern on a substrate using the photolithography apparatus as defined in claim 12; Processing a substrate on which a pattern is formed during the forming step; and Articles are manufactured from processed substrates.

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