刻蚀方法、阶梯孔形成方法及圆台孔形成方法
By forming a mask-building structure on the sidewalls of the photoresist-etched window, and generating polymers using plasma deposition and dry etching techniques, the complex HSASP process was solved, enabling semiconductor structures with smaller linewidths and improving production efficiency and integration.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- WUXI CHINA RESOURCES MICROELECTRONICS
- Filing Date
- 2021-09-27
- Publication Date
- 2026-07-17
AI Technical Summary
The existing hard mask protected self-aligned miniaturization process (HSASP) is complex, costly, and difficult to achieve device structures with smaller linewidths in the process of replacing advanced processes.
By forming a mask reinforcement structure on the sidewall of the photoresist etching window, and using a plasma deposition etching machine and a dry etching machine, a polymer generated by a specific etching gas is used as the mask reinforcement structure to reduce the size of the etching window and achieve a smaller linewidth in a single etching operation.
It simplifies the process, reduces costs, improves production efficiency, and enables semiconductor structures smaller than the minimum linewidth of a lithography machine, thereby enhancing integration and performance.
Smart Images
Figure CN115881530B_ABST