A centralized energy consuming igct valve sub-module

Abstract

This invention discloses a centralized energy-consuming IGCT valve submodule, comprising: an inlet busbar and an outlet busbar disposed on one side of a silicon stack structure; a first resistor fixed on a frame, a first capacitor horizontally arranged below the first resistor, and the first resistor and the first capacitor connected; a second resistor disposed on the frame and connected to a power supply; heat sinks disposed on both sides of the IGCT, the first diode, the second diode, and the third diode for heat dissipation; a power supply disposed below the inlet and outlet busbars; the power supply connected to the IGCT; and an IGCT driver board disposed on one side of the IGCT, supplying power to the IGCT driver board. This invention features a compact structure, natural cooling of internal components, no need for water circuit design, no risk of water leakage, high reliability, and convenient maintenance, making it of great significance for the development of offshore wind power.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor technology and relates to a centralized energy-consuming IGCT valve submodule. Background Technology

[0002] As one of the commonly required devices for offshore wind power transmission projects, the research and development of DC power consumption devices is particularly urgent.

[0003] A DC power consuming device is a power electronic device that consumes temporarily excess energy on the DC side of a system to ensure and support its continuous operation. Currently, with the continuous development of offshore wind power technology, in order to support the fault ride-through operation of offshore wind power via DC transmission systems during AC grid failures onshore, DC power consuming devices (DC-choppers or DBSs) are needed to consume the power that the system cannot transmit during AC faults. This ensures that the offshore DC system can continue to operate after short-term faults and recovery, ensuring that wind turbines do not disconnect from the grid, meeting wind power access guidelines, and further supporting the grid. However, existing DC power consuming devices generate a large amount of heat during operation, and their internal water-cooling systems are complex and prone to failure, affecting the operating efficiency of the DC power consuming device. Summary of the Invention

[0004] The purpose of this invention is to solve the problems of complex water-cooled structure design and leakage risk in the prior art, and to provide a centralized energy-consuming IGCT valve submodule.

[0005] To achieve the above objectives, the present invention employs the following technical solution:

[0006] A centralized energy-consuming IGCT valve submodule includes: a rack, a power supply, a second resistor, and a silicon stack structure;

[0007] The silicon stack structure is located inside the rack, and an inlet busbar and an outlet busbar are provided on one side of the silicon stack structure; the inlet busbar and the outlet busbar are arranged side by side; the inlet busbar and the outlet busbar are used to connect to external equipment;

[0008] A first capacitor and a first resistor are provided on one side of the silicon stack structure. The first resistor is fixed on the frame, and the first capacitor is horizontally arranged below the first resistor. A second resistor is provided on the frame. A second capacitor is provided on one side of the first capacitor. The power supply is located below the incoming busbar and the outgoing busbar. The second resistor is connected to the power supply, and the power supply controls the switching on and off of the second resistor.

[0009] The incoming busbar, silicon stack structure, and outgoing busbar are connected in sequence to form the first circuit; the incoming busbar is connected to the silicon stack structure and the first resistor respectively, the silicon stack structure and the first resistor are connected to the first capacitor, and the first capacitor is connected to the outgoing busbar to form the second circuit; the incoming busbar is connected to the silicon stack structure, the silicon stack structure is connected to the second capacitor and the power supply respectively; the second capacitor and the power supply are connected to the outgoing busbar to form the third circuit; the silicon stack structure includes a heat sink for heat dissipation of the first, second, and third circuits.

[0010] A further improvement of the present invention is that:

[0011] Furthermore, the rack includes several spatial zones; these spatial zones are arranged sequentially from left to right; the silicon stack structure is located in the second spatial zone, the first capacitor and the first resistor are located in the third spatial zone, the second capacitor is located in the last spatial zone, and the power supply, the second resistor, the incoming busbar, the outgoing busbar, and the surge arrester are all located in the first spatial zone; the spatial zones are spaced at unequal intervals.

[0012] Furthermore, both the incoming and outgoing busbars are equipped with connectors, and the surge arrester is installed above the space of the incoming and outgoing busbars through the connectors, without contacting the incoming and outgoing busbars.

[0013] Furthermore, the silicon stack structure also includes yokes arranged opposite each other, and heat dissipation press-fit component assemblies pressed between the yokes; the yokes include a first yoke, a second yoke, and a third yoke; the second yoke is disposed between the first yoke and the third yoke, dividing the silicon stack structure into a first part and a second part; the first yoke, the second yoke, and the third yoke are connected by several tension rods; the heat dissipation press-fit component assembly includes a first component unit and a second component unit; the first component unit is disposed between the first part composed of the first yoke and the second yoke; the second component unit is disposed between the second part composed of the second yoke and the third yoke.

[0014] Furthermore, the first component unit includes a first disc spring unit, a first heat sink, an IGCT, and a second heat sink; the first yoke plate, the first disc spring unit, the first heat sink, the IGCT, the second heat sink, and the second yoke plate are pressed together; the power supply is connected to the IGCT; an IGCT driver board is provided on one side of the IGCT, and the power supply supplies power to the IGCT driver board.

[0015] Furthermore, the second component unit includes a first diode, a second diode, a third diode, a first insulating pad, a second insulating pad, and a second disc spring unit; the first diode, the first insulating pad, the second diode, the second insulating pad, the third diode, and the second disc spring unit are sequentially disposed between the second yoke plate and the third yoke plate; heat sinks are disposed between the second yoke plate and the first diode, the first diode and the first insulating pad, the first insulating pad and the second diode, the second diode and the second insulating pad, the second insulating pad and the third diode, and the third diode and the second disc spring unit.

[0016] Furthermore, both the incoming and outgoing busbars are L-shaped.

[0017] Furthermore, the outer side of the frame is provided with a module bottom plate, a module top plate, a first side plate, a first front panel, a second front panel, a second side plate, a first cover plate, and a second cover plate;

[0018] The first panel is provided with through holes, through which the incoming busbar and outgoing busbar are connected to external equipment;

[0019] The first side plate and the second side plate are disposed opposite to each other on the module base plate, and the first side plate and the first cover plate are located on the same side of the module base plate; the first front panel and the second front panel are disposed opposite to each other; the first cover plate and the second cover plate are disposed opposite to each other.

[0020] Furthermore, the module's top plate, first side plate, second side plate, first cover plate, and second cover plate are all equipped with heat dissipation holes for heat dissipation.

[0021] Furthermore, the incoming busbar, silicon stack structure, and outgoing busbar are connected in sequence to form the first circuit; specifically, the IGCT and the first diode are connected in anti-parallel, one end of the IGCT and one end of the first diode are connected through a heat sink, the other end of the IGCT and the other end of the first diode are connected to the outgoing busbar, and the incoming busbar is connected to the heat sink.

[0022] The incoming busbar is connected to the silicon stack structure and the first resistor respectively. The silicon stack structure and the first resistor are also connected to the first capacitor. The first capacitor is connected to the outgoing busbar to form a second circuit. Specifically, the second diode is connected to the first capacitor, and the first resistor is connected to the first capacitor. The incoming busbar is connected to the second diode and the first resistor respectively. The outgoing busbar is connected to the first capacitor.

[0023] The incoming busbar is connected to the silicon stack structure, which is connected to the second capacitor and the power supply respectively. The second capacitor and the power supply are connected to the outgoing busbar to form a third circuit. Specifically, the third diode is connected to the second capacitor and the power supply; the second resistor is connected to the power supply; the incoming busbar is connected to the third diode; and the outgoing busbar is connected to the second capacitor and the power supply.

[0024] Compared with the prior art, the present invention has the following beneficial effects:

[0025] In this invention, the inlet and outlet busbars are located on one side of the silicon stack structure; the inlet and outlet busbars are arranged side by side; a first resistor is fixed on the frame, and a first capacitor is horizontally arranged below the first resistor, with the first resistor and the first capacitor connected; a second resistor is mounted on the frame; a second capacitor is located on one side of the first capacitor; the inlet busbar, silicon stack structure, and outlet busbar are sequentially connected to form a first circuit; the inlet busbar is connected to the silicon stack structure and the first resistor respectively, the silicon stack structure and the first resistor are simultaneously connected to the first capacitor, and the first capacitor is connected to the outlet busbar to form a second circuit; the inlet busbar is connected to the silicon stack structure, and the silicon stack structure is connected to the second capacitor and the power supply respectively; the second capacitor and the power supply are simultaneously connected to the outlet busbar to form a third circuit; the silicon stack structure includes a heat sink for heat dissipation of the first, second, and third circuits. This invention has a compact structure, uses natural cooling for internal components, requires no water circuit design, has no risk of water leakage, high reliability, and is easy to maintain, which is of great significance for the development of offshore wind power.

[0026] Furthermore, the present invention reduces stray inductance between components and provides safety and stability during valve submodule operation by using a silicon stack structure yoke plate and a press-fit method for heat dissipation press-fit components assembled between the yoke plates. Attached Figure Description

[0027] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0028] Figure 1 This is a diagram of the internal structure of the energy-consuming module of the present invention;

[0029] Figure 2 This is a diagram of the silicon stack structure of the present invention;

[0030] Figure 3 This is an external view of the energy-consuming module of the present invention.

[0031] Wherein: 1-Silicon stack structure; 2-First resistor; 3-First capacitor; 4-Second resistor; 5-Second capacitor; 6-Power supply; 7-Surge arrester; 8-Incoming busbar; 9-Outgoing busbar; 11-First yoke plate; 12-IGCT; 13-First diode; 14-Second diode; 15-Third diode; 16-First insulating gasket; 17-Second insulating gasket; 18-First heat sink; 21-Module base plate; 22-Module top plate; 23-First side plate; 24-First front panel; 25-First cover plate; 27-Tensioning rod; 31-Second yoke plate; 32-Third yoke plate; 33-First disc spring unit; 34-Second heat sink; 35-Second disc spring unit. Detailed Implementation

[0032] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0033] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0034] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0035] In the description of the embodiments of the present invention, it should be noted that if terms such as "upper," "lower," "horizontal," or "inner" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of the invention is in use, they are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention. Furthermore, terms such as "first" and "second" are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0036] Furthermore, the use of the term "horizontal" does not imply that the component must be absolutely horizontal, but rather that it can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0037] In the description of the embodiments of the present invention, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in the present invention according to the specific circumstances.

[0038] The present invention will now be described in further detail with reference to the accompanying drawings:

[0039] See Figure 1 This invention discloses a centralized energy-consuming IGCT valve submodule, comprising: a frame, a power supply 6, a second resistor 4, and a silicon stack structure 1;

[0040] The silicon stack structure 1 is installed inside the rack, and an inlet busbar 8 and an outlet busbar 9 are provided on one side of the silicon stack structure; the inlet busbar 8 and the outlet busbar 9 are arranged side by side; the inlet busbar 8 and the outlet busbar 9 are used to connect with external equipment;

[0041] Both the incoming busbar 8 and the outgoing busbar 9 are equipped with connectors. The surge arrester 7 is installed above the space of the incoming busbar 8 and the outgoing busbar 9 through the connectors, and does not contact the incoming busbar 8 and the outgoing busbar 9. The surge arrester 7 is placed as close as possible to the IGCT12 to achieve a good protection effect.

[0042] A first capacitor 3 and a first resistor 2 are provided on one side of the silicon stack structure 1. The first resistor 2 is fixed on the frame, the first capacitor 3 is horizontally arranged below the first resistor 2, and the second resistor 4 is provided on the frame. A second capacitor 5 is provided on one side of the first capacitor 3. The power supply 6 is located below the incoming busbar 8 and the outgoing busbar 9. The second resistor 4 is connected to the power supply 6, and the power supply controls the connection and disconnection of the second resistor 4.

[0043] The incoming busbar 8, silicon stack structure 1, and outgoing busbar 9 are connected in sequence to form the first circuit; the incoming busbar 8 is connected to the silicon stack structure 1 and the first resistor 2 respectively, the silicon stack structure 1 and the first resistor 2 are also connected to the first capacitor 3, and the first capacitor 3 is connected to the outgoing busbar 9 to form the second circuit; the incoming busbar 8 is connected to the silicon stack structure 1, the silicon stack structure 1 is connected to the second capacitor 5 and the power supply 6 respectively; the second capacitor 5 and the power supply 6 are also connected to the outgoing busbar 9 to form the third circuit; the silicon stack structure 1 includes a heat sink for heat dissipation of the first circuit, the second circuit, and the third circuit.

[0044] The rack comprises several spatial zones; these spatial zones are arranged sequentially from left to right; the silicon stack structure is located in the second spatial zone, the first capacitor 3 and the first resistor 2 are located in the third spatial zone, the second capacitor is located in the last spatial zone, and the power supply 6, the second resistor 4, the incoming busbar 8, the outgoing busbar 9, and the surge arrester 7 are all located in the first spatial zone; the spatial zones are spaced at unequal intervals.

[0045] See Figure 2 The silicon stack structure also includes yokes arranged opposite each other, and heat dissipation press-fit component assemblies pressed between the yokes; the yokes include a first yoke 11, a second yoke 31, and a third yoke 32; the second yoke 31 is disposed between the first yoke 11 and the third yoke 32, and divides the silicon stack structure into a first part and a second part; the first yoke 11, the second yoke 31, and the third yoke 32 are connected by a plurality of tension rods 27; the heat dissipation press-fit component assembly includes a first component unit and a second component unit; the first component unit is disposed between the first part composed of the first yoke 11 and the second yoke 31; the second component unit is disposed between the second part composed of the second yoke 31 and the third yoke 32.

[0046] The first component unit includes a first disc spring unit 33, a first heat sink 18, an IGCT12, and a second heat sink 34; the first yoke plate 11, the first disc spring unit 33, the first heat sink 18, the IGCT12, the second heat sink 34, and the second yoke plate 31 are pressed together; the power supply 6 is connected to the IGCT12; an IGCT driver board is provided on one side of the IGCT12, and the power supply 6 supplies power to the IGCT driver board through the IGCT12. The second component unit includes a first diode 13, a second diode 14, a third diode 15, a first insulating pad 16, a second insulating pad 17, and a second disc spring unit 35. The first diode 13, the first insulating pad 16, the second diode 14, the second insulating pad 17, the third diode 15, and the second disc spring unit 35 are sequentially arranged between the second yoke plate 31 and the third yoke plate 32. Heat sinks are provided between the second yoke plate 31 and the first diode 13, between the first diode 13 and the first insulating pad 16, between the first insulating pad 16 and the second diode 14, between the second diode 14 and the second insulating pad 17, between the second insulating pad 17 and the third diode 15, and between the third diode 15 and the second disc spring unit 35. Both the incoming busbar 8 and the outgoing busbar 9 are L-shaped.

[0047] See Figure 3 The outer side of the frame is provided with a module base plate 21, a module top plate 22, a first side plate 23, a first front panel 24, a second front panel, a second side plate, a first cover plate 25, and a second cover plate;

[0048] The first panel 24 is provided with through holes, through which the incoming busbar 8 and the outgoing busbar 9 are connected to external equipment;

[0049] The first side plate 23 and the second side plate are disposed opposite to each other on the module base plate 21, and the first side plate 23 and the first cover plate 25 are located on the same side of the module base plate 21; the first panel 24 and the second panel are disposed opposite to each other; the first cover plate 25 and the second cover plate are disposed opposite to each other.

[0050] The module top plate 22, first side plate 23, second side plate, first cover plate 25, and second cover plate are all provided with heat dissipation holes for heat dissipation. The heat sources are the first capacitor 3, the first resistor 2, the second capacitor 5, and the second resistor 4.

[0051] The frame is composed of multiple supporting columns. The module top plate 22 has reserved hoisting holes, so the module can be replaced as a whole during maintenance, which is convenient for maintenance.

[0052] The module is divided into three loops: the first loop, the second loop, and the third loop. The first loop includes: IGCT12 and the first diode 13 are connected in anti-parallel. One end of IGCT12 and one end of the first diode 13 are connected through a heat sink. The other end of IGCT12 and the other end of the first diode 13 are connected to the outgoing busbar 9. The incoming busbar 8 is connected to the heat sink. Current flows in from the incoming busbar 8, flows through the heat sink into IGCT12 and the first diode 13, and flows out from the outgoing busbar 9.

[0053] The second circuit includes a second diode 14 connected to a first capacitor 3, and a first resistor 2 connected to a first capacitor 3; an incoming busbar 8 is connected to the second diode 14 and the first resistor 2 respectively; an outgoing busbar 9 is connected to the first capacitor 3, the first resistor 2 is fixed on the frame, the first capacitor 3 is horizontally arranged below the first resistor 2, and the first resistor 2 and the first capacitor 3 are connected by a connecting busbar; the second circuit is as close as possible to the IGCT and is connected by copper busbars. There are many copper busbars, and the area of ​​the second circuit is minimized during the design to reduce the stray inductance of the second circuit.

[0054] The third diode 15 in the third circuit is connected to the second capacitor 5, and the third diode 15 is connected to the power supply 6; the second resistor 4 is connected to the power supply 6, and the incoming busbar 8 is connected to the third diode 15; the outgoing busbar 9 is connected to the second capacitor 5 and the power supply 6. All parts are connected by cables. The second resistor 4 is connected to the power supply 6 by a wire, the third diode 15 is connected to the second capacitor 5 by a wire, and the third diode 15 is also connected to the power supply 6 by a wire.

[0055] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A concentrated energy consuming IGCT valve sub-module, characterized in that, include: The rack, power supply (6), second resistor (4), and silicon stack structure (1); The silicon stack structure (1) is installed inside the rack, and an inlet busbar (8) and an outlet busbar (9) are provided on one side of the silicon stack structure; the inlet busbar (8) and the outlet busbar (9) are arranged side by side; the inlet busbar (8) and the outlet busbar (9) are used to connect with external equipment; The silicon stack structure (1) has a first capacitor (3) and a first resistor (2) on one side. The first resistor (2) is fixed on the frame, and the first capacitor (3) is horizontally arranged below the first resistor (2). The second resistor (4) is arranged on the frame. A second capacitor (5) is arranged on one side of the first capacitor (3). The power supply (6) is arranged below the incoming busbar (8) and the outgoing busbar (9). The second resistor (4) is connected to the power supply (6), and the power supply controls the connection and disconnection of the second resistor (4). The incoming busbar (8), silicon stack structure (1), and outgoing busbar (9) are connected in sequence to form a first circuit; the incoming busbar (8) is connected to the silicon stack structure (1) and the first resistor (2) respectively, the silicon stack structure (1) and the first resistor (2) are connected to the first capacitor (3) at the same time, and the first capacitor (3) is connected to the outgoing busbar (9) to form a second circuit; the incoming busbar (8) is connected to the silicon stack structure (1), the silicon stack structure (1) is connected to the second capacitor (5) and the power supply (6) respectively; the second capacitor (5) and the power supply (6) are connected to the outgoing busbar (9) at the same time to form a third circuit; the silicon stack structure (1) includes a heat sink for heat dissipation of the first circuit, the second circuit, and the third circuit.

2. The centralized energy consuming IGCT valve sub-module according to claim 1, characterized in that The rack includes several spatial zones; the several spatial zones are arranged sequentially from left to right; the silicon stack structure is located in the second spatial zone, the first capacitor (3) and the first resistor (2) are located in the third spatial zone, the second capacitor is located in the last spatial zone, and the power supply (6), the second resistor (4), the incoming busbar (8), the outgoing busbar (9) and the surge arrester (7) are all located in the first spatial zone; the spatial zones are spaced unequally apart.

3. The centralized energy consuming IGCT valve sub-module according to claim 2, characterized in that Both the incoming busbar (8) and the outgoing busbar (9) are equipped with connectors. The surge arrester (7) is installed above the space of the incoming busbar (8) and the outgoing busbar (9) through the connectors, and does not contact the incoming busbar (8) and the outgoing busbar (9).

4. The centralized energy consuming IGCT valve sub-module according to claim 3, characterized in that The silicon stack structure also includes yokes arranged opposite each other, and heat dissipation press-fit component assemblies pressed between the yokes; the yokes include a first yoke (11), a second yoke (31) and a third yoke (32); the second yoke (31) is disposed between the first yoke (11) and the third yoke (32), and divides the silicon stack structure into a first part and a second part; the first yoke (11), the second yoke (31) and the third yoke (32) are connected by a plurality of tension rods (27); the heat dissipation press-fit component assembly includes a first component unit and a second component unit; the first component unit is disposed between the first part composed of the first yoke (11) and the second yoke (31); the second component unit is disposed between the second part composed of the second yoke (31) and the third yoke (32).

5. The centralized energy-consuming IGCT valve submodule according to claim 4, characterized in that, The first component unit includes a first disc spring unit (33), a first heat sink (18), an IGCT (12), and a second heat sink (34); the first yoke plate (11), the first disc spring unit (33), the first heat sink (18), the IGCT (12), the second heat sink (34), and the second yoke plate (31) are pressed together; the power supply (6) is connected to the IGCT (12); an IGCT drive board is provided on one side of the IGCT (12), and the power supply (6) supplies power to the IGCT drive board.

6. The centralized energy consuming IGCT valve sub-module according to claim 5, characterized in that The second component unit includes a first diode (13), a second diode (14), a third diode (15), a first insulating pad (16), a second insulating pad (17), and a second disc spring unit (35); the first diode (13), the first insulating pad (16), the second diode (14), the second insulating pad (17), the third diode (15), and the second disc spring unit (35) are sequentially disposed between the second yoke plate (31) and the third yoke plate (32); heat sinks are disposed between the second yoke plate (31) and the first diode (13), the first diode (13) and the first insulating pad (16), the first insulating pad (16) and the second diode (14), the second diode (14) and the second insulating pad (17), the second insulating pad (17) and the third diode (15), and the third diode (15) and the second disc spring unit (35).

7. The concentrated energy-consuming IGCT valve sub-module according to claim 6, characterized in that Both the incoming busbar (8) and the outgoing busbar (9) are L-shaped.

8. The centralized energy-consuming IGCT valve submodule according to claim 7, characterized in that, The outer side of the frame is provided with a module bottom plate (21), a module top plate (22), a first side plate (23), a first front panel (24), a second front panel, a second side plate, a first cover plate (25), and a second cover plate; The first panel (24) is provided with through holes, and the incoming busbar (8) and the outgoing busbar (9) are connected to external equipment through the through holes; The first side plate (23) and the second side plate are disposed opposite to each other on the module base plate (21), and the first side plate (23) and the first cover plate (25) are located on the same side of the module base plate (21); the first panel (24) and the second panel are disposed opposite to each other; the first cover plate (25) and the second cover plate are disposed opposite to each other.

9. The centralized energy consuming IGCT valve sub-module according to claim 8, characterized in that The module top plate (22), first side plate (23), second side plate, first cover plate (25) and second cover plate are all provided with heat dissipation holes for heat dissipation.

10. The centralized energy consuming IGCT valve sub-module according to claim 9, characterized in that The incoming busbar (8), silicon stack structure (1), and outgoing busbar (9) are connected in sequence to form the first circuit; specifically, the IGCT (12) is connected in antiparallel with the first diode (13), one end of the IGCT (12) is connected to one end of the first diode (13) through a heat sink, and the other end of the IGCT (12) and the other end of the first diode (13) are connected to the outgoing busbar (9) at the same time, and the incoming busbar (8) is connected to the heat sink; The incoming busbar (8) is connected to the silicon stack structure (1) and the first resistor (2) respectively. The silicon stack structure (1) and the first resistor (2) are also connected to the first capacitor (3). The first capacitor (3) is connected to the outgoing busbar (9) to form a second circuit. Specifically, the second diode (14) is connected to the first capacitor (3), and the first resistor (2) is connected to the first capacitor (3). The incoming busbar (8) is connected to the second diode (14) and the first resistor (2) respectively. The outgoing busbar (9) is connected to the first capacitor (3). The incoming busbar (8) is connected to the silicon stack structure (1), and the silicon stack structure (1) is connected to the second capacitor (5) and the power supply (6) respectively; the second capacitor (5) and the power supply (6) are connected to the outgoing busbar (9) to form a third circuit, specifically: the third diode (15) is connected to the second capacitor (5), the third diode (15) is connected to the power supply (6); the second resistor (4) is connected to the power supply (6), and the incoming busbar (8) is connected to the third diode (15); the outgoing busbar (9) is connected to the second capacitor (5) and the power supply (6).

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