Substrate processing method

Abstract

This invention relates to a substrate processing method, which performs processing on a substrate in a processing space divided into a first processing region and a second processing region. The substrate processing method includes: performing a first processing on the substrate in the first processing region when the substrate, supported by a support unit, is disposed in the first processing region; rotating the support unit to move the substrate to the second processing region after the first processing is completed; and performing a second processing on the substrate in the second processing region when the substrate, supported by the support unit, is disposed in the second processing region.

Description

Technical Field

[0001] This invention relates to a substrate processing method, which involves performing processing techniques such as deposition and etching on a substrate. Background Technology

[0002] Generally, to manufacture solar cells, semiconductor devices, flat panel displays, etc., thin film layers, thin film circuit patterns, or optical patterns need to be formed on a substrate. This requires processing techniques on the substrate. Examples of these techniques include deposition processes that deposit thin films containing specific materials onto the substrate, exposure processes that selectively expose a portion of the thin film using photosensitive materials, and etching processes that remove the selectively exposed portions of the thin film to form patterns.

[0003] This processing on the substrate is performed by a substrate processing apparatus. The substrate processing apparatus includes a cavity providing processing space, a support unit supporting the substrate, and a gas jetting unit that sprays gas towards the support unit. The substrate processing apparatus uses the source gas and reaction gas sprayed by the gas jetting unit to perform the processing on the substrate.

[0004] In recent years, the demand for devices with various properties, such as doped devices and devices with multiple thin-film structures, has been increasing. However, the relevant technologies have been implemented in a process where the gas injection unit always injects a constant amount of gas and the support unit rotates continuously at a specific speed without stopping. Therefore, the relevant technologies face difficulties in processing devices with various properties, such as doped devices and devices with multiple thin-film structures. Summary of the Invention

[0005] Technical issues

[0006] The present invention aims to solve the above-mentioned problems and provide a substrate processing method that can perform processing for manufacturing devices with various characteristics, such as doped devices and devices with multiple thin film structures.

[0007] Technical means

[0008] To achieve the above objectives, the present invention may include the following elements.

[0009] The substrate processing method according to the present invention is a method for processing a substrate, which performs a processing process on the substrate in a processing space divided into a first processing region and a second processing region, and may include: a step of performing a first processing process on the substrate in the first processing region when the substrate supported by the support unit is disposed in the first processing region; a step of rotating the support unit to move the substrate to the second processing region after the first processing process is completed; and a step of performing a second processing process on the substrate in the second processing region when the substrate supported by the support unit is disposed in the second processing region.

[0010] In the substrate processing method according to the present invention, the step of performing the first processing process may include: the step of injecting a first source gas into a first processing area, and the step of injecting a second source gas into the first processing area.

[0011] In the substrate processing method according to the present invention, the step of performing the second processing process may include: the step of injecting a first reactive gas into a second processing area, and the step of injecting a second reactive gas into the second processing area.

[0012] In the substrate processing method according to the present invention, the step of performing the second processing process may include: the step of injecting a first reactive gas into a second processing region, and the step of generating plasma in the second processing region.

[0013] In the substrate processing method according to the present invention, the first processing step involves injecting a mixed gas containing two or more source gases into a first processing area. The second processing step involves injecting a mixed gas containing two or more reactant gases into a second processing area.

[0014] The substrate processing method according to the present invention is a method for processing a substrate, which performs a processing process on the substrate in a processing space divided into a first processing region and a second processing region, and may include: when the substrate supported by a support unit is disposed in the first processing region, injecting a first source gas into the first processing region to perform a first processing process using the first source gas; when the first processing process using the first source gas is completed, rotating the support unit to move the substrate to the second processing region; when the substrate that has undergone the first processing process using the first source gas is disposed in the second processing region, injecting a first reaction gas into the second processing region to perform a second processing process using the first reaction gas; and ... substrate that has undergone the first processing process using the first source gas is disposed in the second processing region, injecting a first reaction gas into the second processing region to perform a second processing process using the first reaction gas; and when the substrate that has undergone the first processing process using the first source gas is disposed in the second processing region, injecting a first reaction gas into the second processing region to perform a second processing process using the first reaction gas; and when the substrate that has undergone the first processing process using the first reaction gas is disposed in the second processing region, injecting a first reaction gas into the second processing region to perform a second processing process using the first reaction gas; and when the substrate that has undergone the first processing process using the first reaction gas is disposed in the second processing region, injecting a first reaction gas into the second processing region to perform a second processing process using the first reaction gas; and when the substrate that has undergone the first processing process using the first reaction gas is disposed The steps include: rotating a support unit to move a substrate to a first processing area during the second processing of the reactant gas; spraying a second source gas, different from the first source gas, into the first processing area to perform the first processing of the second source gas when the substrate has already undergone the second processing of the first reactant gas is placed in the first processing area; rotating the support unit to move the substrate to a second processing area after the first processing of the second source gas is completed; and spraying a second reactant gas, different from the first reactant gas, into the second processing area to perform the second processing of the second reactant gas when the substrate has already undergone the first processing of the second source gas is placed in the second processing area.

[0015] Beneficial effects

[0016] According to the present invention, the following effects can be achieved.

[0017] This invention can be implemented by adjusting the execution time of each of the processing steps using the source gas and the processing steps using the reaction gas, thus allowing adjustment of the cultivation time required for thin film growth in each of the processing steps using the source gas and the processing steps using the reaction gas. Therefore, this invention can be used for processing steps to manufacture devices with various characteristics, such as doped devices and devices with multiple thin film structures.

[0018] This invention can be implemented by spatially dividing the space into processing areas for each of the processing steps using source gases and the processing steps using reaction gases. Therefore, this invention can increase the cleaning cycle inside the chamber, thereby reducing cleaning costs and increasing the operating rate, which in turn increases the yield of substrates that have completed the processing. Attached Figure Description

[0019] Figure 1 An exploded perspective view illustrating an example of a substrate processing apparatus for performing the substrate processing method according to the present invention.

[0020] Figure 2For along Figure 1 The side cross-section diagram of the substrate processing equipment is shown by the cleavage line II in the figure.

[0021] Figure 3 for Figure 1 A plan view of the support unit in the substrate processing equipment.

[0022] Figure 4 This is a schematic flowchart of the substrate processing method according to the present invention.

[0023] Figure 5 This is a schematic flowchart of the first processing step in the substrate processing method according to the present invention.

[0024] Figure 6 A timing diagram of the gas injection phase in various embodiments of the first processing step in the substrate processing method according to the present invention.

[0025] Figure 7 This is a schematic flowchart of the second processing step in the substrate processing method according to the present invention.

[0026] Figure 8 A timing diagram of the gas injection phase in various embodiments of the second processing step in the substrate processing method according to the present invention is provided.

[0027] Figure 9 A timing diagram is provided to illustrate the gas injection period and the substrate movement period in the substrate processing method according to a modified embodiment of the present invention. Detailed Implementation

[0028] Please see Figure 1 and Figure 2 According to the substrate processing method of the present invention, a processing process is performed on a substrate S. The substrate S may be a silicon substrate, a glass substrate, a metal substrate, etc. The substrate processing method of the present invention can perform a deposition process to deposit a thin film on the substrate S, and an etching process to remove a portion of the thin film deposited on the substrate. Hereinafter, embodiments of the deposition process performed by the substrate processing method of the present invention will be mainly described, and for this reason, it will be apparent to those skilled in the art that embodiments of the substrate processing method of the present invention can be devised to perform another processing process such as etching.

[0029] The substrate processing method according to the present invention can be performed by substrate processing apparatus 1. Before describing an embodiment of the substrate processing method according to the present invention, substrate processing apparatus 1 will be described in detail.

[0030] Please see Figures 1 to 3 The substrate processing equipment 1 may include a cavity 2, a support unit 3, a gas injection unit 4, and a gas supply unit 5.

[0031] Please see Figures 1 to 3 The cavity 2 provides a processing space 100. Processing processes (such as deposition and etching processes) performed on the substrate S can be performed in the processing space 100. The processing space 100 can be divided into a first processing region 110 and a second processing region 120 within the cavity 2. A third processing region 130 can be disposed between the first processing region 110 and the second processing region 120. A support unit 3 and a gas injection unit 4 can be installed in the cavity 2. A first exhaust port 21 and a second exhaust port 22 can be coupled to the cavity 2. The first exhaust port 21 can be connected to the first processing region 110. Therefore, gas disposed in the first processing region 110 can be discharged to the outside of the cavity 2 through the first exhaust port 21. The second exhaust port 22 can be connected to the second processing region 120. Therefore, gas disposed in the second processing region 120 can be discharged to the outside of the cavity 2 through the second exhaust port 22.

[0032] Please see Figures 1 to 3 The support unit 3 can be installed in the cavity 2. The support unit 3 can support one substrate S, or can support multiple substrates S1 to S4 (e.g., Figure 3 (As shown). When the processing space 100 includes a first processing area 110, a second processing area 120, and a third processing area 130, a portion of the support unit 3 may be disposed in the first processing area 110, and another portion of the support unit 3 may be disposed in the third processing area 130. In the case where multiple substrates S1 to S4 are supported by the support unit 3, a portion of the substrates S1 to S4 may be disposed in the first processing area 110, and the remaining substrates S1 to S4 may be supported by the support unit 3 and disposed in the second processing area 120.

[0033] The support unit 3 can rotate within the cavity 2 around the support shaft 30 of the support unit 3 (e.g., Figure 3 (As shown). By rotating the support unit 3, the substrate S supported by the support unit 3 can be moved to each of the other processing areas in the cavity 2. When the support unit 3 rotates, portions of the substrates S1 to S4 can move from the first processing area 110 to the second processing area 120 via the third processing area 130, and can again move from the second processing area 120 to the first processing area 110 via the third processing area 130. The rotation of the support unit 3 can be performed by repeated stopping and starting. Therefore, the substrate S supported by the support unit 3 can move between different processing areas by repeated stopping and starting. The support unit 3 can be rotated about the support axis 30 by the rotation unit 6. The rotation and stopping of the support unit 3 can be performed repeatedly by the rotation unit 6.

[0034] Please see Figures 1 to 3The gas injection unit 4 injects gas toward the support unit 3. The gas injection unit 4 can be connected to the gas supply unit 5. Therefore, the gas injection unit 4 can inject gas supplied from the gas supply unit 5 toward the support unit 3. The gas injection unit 4 can be positioned relative to the support unit 3. The processing space 100 can be disposed between the gas injection unit 4 and the support unit 3. The gas injection unit 4 can be coupled to the cavity cover 20. The cavity cover 20 can be coupled to the cavity 2 to cover the top of the cavity 2.

[0035] The gas injection unit 4 may include a first injection unit 41 and a second injection unit 42.

[0036] The first injection unit 41 injects gas into the first processing area 110. The first processing area 110 may correspond to a portion of the processing space 100. The first injection unit 41 may be disposed above and spaced apart from the support unit 3. In this case, the first processing area 110 may be the area between the first injection unit 41 and the support unit 3. The first injection unit 41 may inject at least one source gas into the first processing area 110. The first injection unit 41 may inject purge gas into the first processing area 110. The purge gas may be an inert gas, such as argon (Ar).

[0037] The second injection unit 42 injects gas into the second processing region 120. The second processing region 120 may correspond to a portion of the processing space 100. The second injection unit 42 may be disposed above and spaced apart from the support unit 3. In this case, the second processing region 120 may be the region between the second injection unit 42 and the support unit 3. The second injection unit 42 may inject at least one reactive gas into the second processing region 120. The second injection unit 42 may inject purge gas into the second processing region 120.

[0038] The gas injection unit 4 may further include a third injection unit 43.

[0039] The third injection unit 43 injects gas into the third processing region 130. The third processing region 130 may correspond to a portion of the processing space 100. The third processing region 130 may be the region between the first processing region 110 and the second processing region 120. The third injection unit 43 may be disposed above and spaced apart from the support unit 3. The third injection unit 43 may be disposed between the first injection unit 41 and the second injection unit 42. The third injection unit 43 may inject a separating gas into the third processing region 130. The separating gas may be an inert gas, such as argon (Ar). Because the third injection unit 43 injects the separating gas into the third processing region 130, the first processing region 110 and the second processing region 120 can be spatially separated from each other, so that the gas does not mix between the first processing region 110 and the second processing region 120.

[0040] Please see Figures 1 to 3 The gas supply unit 5 supplies gas to the gas injection unit 4. The gas supply unit 5 can supply gas to each of the first injection unit 41 and the second injection unit 42. The gas supply unit 5 can also supply gas to the third injection unit 43. The gas supply unit 5 can be installed inside or outside the cavity 2.

[0041] The gas supply unit 5 may include a first supply unit 51 and a second supply unit 52.

[0042] The first supply unit 51 can supply at least one source gas to the first injection unit 41. The first supply unit 51 can also supply purge gas to the first injection unit 41. In this case, the first supply unit 51 can supply at least one source gas and purge gas to the first injection unit 41 using a preset process sequence.

[0043] The second supply unit 52 can supply at least one reactive gas to the second injection unit 42. The second supply unit 52 can also supply purge gas to the second injection unit 42. In this case, the second supply unit 52 can supply at least one reactive gas and purge gas to the second injection unit 42 according to a preset process sequence.

[0044] The gas supply unit 5 may further include a third supply unit 53.

[0045] The third supply unit 53 can supply the separating gas to the third injection unit 43. The third supply unit 53 can intermittently or continuously supply the separating gas to the third injection unit 43 while the processing is being carried out on the substrate S.

[0046] The substrate processing method according to the present invention can be performed using substrate processing equipment 1, but is not limited thereto, and substrate processing equipment implemented in different ways can also be used to perform the substrate processing method according to the present invention.

[0047] Hereinafter, embodiments of the substrate processing method according to the present invention will be described in detail with reference to the accompanying drawings.

[0048] Please see Figures 1 to 4 The substrate processing method according to the present invention may include the following steps.

[0049] First, a first processing step (step S10) is performed in the first processing area. Step S10 for the first processing step can be performed while the substrate S supported by the support unit 3 is disposed in the first processing area 110 and the rotation of the support unit 3 is stopped. When the substrate S supported by the support unit 3 is disposed in the first processing area 110, the first injection unit 41 can inject gas into the first processing area 110 to perform step S10 for the first processing step. In this case, the first injection unit 41 can inject at least one source gas into the first processing area 110. Because the source gas is injected into the first processing area 110, an adsorption process that adsorbs the source material onto the substrate S can be performed in the first processing area 110. The first injection unit 41 can inject the source gas into the first processing area 110, and then can inject the purging gas into the first processing area 110.

[0050] Subsequently, the substrate can be moved from the first processing area to the second processing area (step S20). Step S20, moving the substrate from the first processing area to the second processing area, can be performed after the first processing step S10 is completed. When the first processing step is completed, the rotating unit 6 can rotate the supporting unit 3 around the supporting shaft 30 to perform step S20, moving the substrate from the first processing area to the second processing area. When the substrate S disposed in the first processing area 110 is disposed in the second processing area 120, the rotating unit 6 can stop the rotation of the supporting unit 3. Step S20, moving the substrate S disposed in the first processing area 110 to the second processing area 120 via the third processing area 130, can be performed by rotating the supporting unit 3. When the substrate S passes through the third processing area 130, the third spraying unit 43 can spray gas onto the substrate S.

[0051] Subsequently, a second processing step (step S30) is performed in the second processing area. Step S30 for the second processing step can be performed while the substrate S supported by the support unit 3 is disposed in the second processing area 120 and the rotation of the support unit 3 is stopped. When the substrate S supported by the support unit 3 is disposed in the second processing area 120, the second spraying unit 42 can spray gas into the second processing area 120 to perform step S30 for the second processing step. In this case, the second spraying unit 42 can spray at least one reactive gas into the second processing area 120. Because the reactive gas is sprayed into the second processing area 120, a deposition process for depositing a thin film by reacting the reactive gas with the source material adsorbed on the substrate S can be performed in the second processing area 120. The second spraying unit 42 can spray the reactive gas into the second processing area 120, and then spray the purging gas into the second processing area 120.

[0052] Subsequently, the substrate can be moved from the second processing area to the first processing area (step S40). Step S40, moving the substrate from the second processing area to the first processing area, can be performed after the second processing process is completed in step S30. When the second processing process is completed, the rotating unit 6 can rotate the supporting unit 3 around the supporting shaft 30 to perform step S40, moving the substrate from the second processing area to the first processing area. When the substrate S disposed in the second processing area 120 is disposed in the first processing area 110, the rotating unit 6 can stop the rotation of the supporting unit 3. Step S40, moving the substrate S disposed in the second processing area 120 to the first processing area 110 via the third processing area 130, can be performed by rotating the supporting unit 3. When the substrate S passes through the third processing area 130, the third spraying unit 43 can spray gas onto the substrate S.

[0053] As described above, the substrate processing method according to the present invention is implemented such that the first processing process and the second processing process are performed while the substrate supported by the support unit 3 is in a stopped state. Therefore, the substrate processing method according to the present invention allows adjustment of the time for each of the first and second processing processes, thereby adjusting the cultivation time required for thin film growth in each of the first and second processing processes. Therefore, the substrate processing method according to the present invention can perform processing processes for manufacturing devices with various characteristics, such as doped devices and devices with multi-thin film structures. Furthermore, in the substrate processing method according to the present invention, the first processing region 110 for performing the first processing process and the second processing region 120 for performing the second processing process can be spatially separated from each other by a separating gas, thus preventing contamination of the interior of the cavity 2 due to the reaction between the source gas and the reactant gas. Therefore, the substrate processing method according to the present invention can increase the cleaning cycle of the interior of the cavity 2, thereby reducing cleaning costs and increasing the operating rate, and thus increasing the yield of substrates that have completed the processing process.

[0054] Therefore, the substrate processing method according to the present invention may include several embodiments of step S10 of performing the first processing process. Referring to... Figures 1 to 6 Several embodiments of step S10 of the first processing technology are described in detail. Figure 6 In the middle, the horizontal axis represents time.

[0055] A first embodiment of step S10 of the first processing technology may include step S11 of injecting a first source gas and step S12 of injecting a second source gas.

[0056] Step S11, in which the first source gas is injected into the first processing area 110, can be performed. Step S11, in which the first source gas is injected, can be performed by the first injection unit 41. Step S11, in which the first source gas is injected, can be performed while the support unit 3 is in a stopped state.

[0057] Step S12, which involves injecting a second source gas, can be performed by spraying the second source gas into the first processing area 110. Step S12 can be performed after step S11, which involves spraying the first source gas. Step S12 can be performed by the first spraying unit 41. Step S12 can be performed while the support unit 3 is stopped rotating.

[0058] Step S12, which involves injecting a second source gas different from the first source gas, can be performed by injecting a second source gas. In this case, adsorption processes using different types of source gases can be sequentially performed on the substrate S, and a doped composite film can be formed. Therefore, the substrate processing method according to the present invention can be implemented to perform processing processes for manufacturing devices with various characteristics, such as doped devices. As described above, the first embodiment of step S10 of performing the first processing process can be implemented by injecting different source gases, so that multiple metal components can be included in the film. For example, the first embodiment of step S10 of performing the first processing process can form a metal film containing one or more metals selected from hafnium (Hf), zirconium (Zr), yttrium (Y), and magnesium (Mg).

[0059] Step S12, which involves injecting a second source gas identical to the first source gas, can be performed. In this case, the adsorption process using the same type of source gas can be repeated on the substrate S, and a thin film with a dense structure can be formed.

[0060] Step S10 of the first processing step may include step S13 of injecting purging gas. Step S13 of injecting purging gas can be performed by injecting purging gas into the first processing area 110. Step S13 of injecting purging gas can be performed by the first injection unit 41. Step S13 of injecting purging gas can be performed when the support unit 3 is stopped rotating.

[0061] Step S13, which involves injecting a purging gas, can be performed after step S11, where the first source gas is injected, and before step S12, where the second source gas is injected. In other words, step S13 can be performed between step S11, where the first source gas is injected, and step S12, where the second source gas is injected. Therefore, according to the substrate processing method of the present invention, the second source gas is injected only after the first source gas that has not been adsorbed onto the substrate S has been purged with purging gas, thereby improving the quality of the substrate after the first processing process. In this case, the first embodiment of step S10, where the first processing process is performed, can be implemented such that the first source gas and the second source gas contain the same source gas, thus continuously injecting the same source gas in the same space. Because the source gas is used as a seed for depositing a seed film, the first embodiment of step S10, where the adsorption of source material based on the source gas injection and the purging based on the purging gas injection are performed continuously, can preferably adsorb the source material, thereby increasing the density of the metal seed.

[0062] In a first embodiment of step S10 of the first processing step, step S11 involves injecting a first source gas during a first source injection time. Step S12 involves injecting a second source gas during a second source injection time. In this case, the first source injection time and the second source injection time can be implemented as the same. Therefore, the substrate processing method according to the present invention can be implemented such that the time for the adsorption process using the first source gas is equal to the time for the adsorption process using the second source gas.

[0063] Compared to the first embodiment of step S10 of the first processing process described above, the second embodiment of step S10 of the first processing process differs in that the first source jetting time and the second source jetting time are implemented differently. The second embodiment of step S10 of the first processing process can be implemented such that the first source jetting time is shorter than the second source jetting time. Therefore, the substrate processing method according to the present invention can be implemented such that the time for the adsorption process using the first source gas is shorter than the time for the adsorption process using the second source gas.

[0064] Compared to the first embodiment of step S10 of the first processing process described above, the third embodiment of step S10 of the first processing process differs in that the first source jetting time and the second source jetting time are implemented differently. The third embodiment of step S10 of the first processing process can be implemented such that the first source jetting time is longer than the second source jetting time. Therefore, the substrate processing method according to the present invention can be implemented such that the adsorption process using the first source gas takes longer than the adsorption process using the second source gas.

[0065] In the second and third embodiments of step S10 of the first processing process, the first source gas and the second source gas may contain the same source gas. Therefore, the second and third embodiments of step S10 of the first processing process can be implemented by continuously injecting the same source gas in the same space. Thus, the second and third embodiments of step S10 of the first processing process can be implemented such that source gas adsorption based on source gas injection and purging based on purging gas injection are performed continuously, thereby allowing for a more favorable adsorption of the source gas and increasing the density of the metal seed crystals.

[0066] In the second and third embodiments of step S10 of the first processing process, the first source gas and the second source gas may contain different source gases. Therefore, in the second and third embodiments of step S10 of the first processing process, a multi-metal component may be contained in the membrane. For example, the second and third embodiments of step S10 of the first processing process may form a metal membrane containing one or more metals selected from hafnium (Hf), zirconium (Zr), yttrium (Y), and magnesium (Mg).

[0067] Furthermore, the second and third embodiments of step S10 of the first processing process can be implemented by injecting a first source gas and a second source gas containing different source gases at different first source injection times and second source injection times. Therefore, the second and third embodiments of step S10 of the first processing process can increase the proportion of the required metal in the membrane and improve the accuracy of adjusting the proportion of the metal contained in the membrane.

[0068] Compared to the first to third embodiments of the first processing step S10, the fourth embodiment of the first processing step S10 may further include the step S14 of injecting a third source gas.

[0069] Step S14, where a third source gas is injected into the first processing area 110, can be performed. Step S14 can be performed after step S12, where a second source gas is injected. Step S14 can be performed by the first injection unit 41. Step S14 can be performed while the support unit 3 is stopped rotating.

[0070] Step S14, which involves injecting a third source gas different from both the first and second source gases, can be performed. In this case, adsorption processes using different types of source gases can be sequentially performed on the substrate S, and a doped composite film can be formed. Therefore, the substrate processing method according to the present invention can be implemented as a processing process for manufacturing devices with a wider variety of properties.

[0071] Step S14, which involves injecting a third source gas identical to at least one of the first and second source gases, can be performed. In this case, the adsorption process using the same type of source gas can be repeated on the substrate S, and a thin film with a dense structure can be formed.

[0072] In the fourth embodiment of step S10 of the first processing process, step S13' of injecting purging gas can be performed between step S12 of injecting the second source gas and step S14 of injecting the third source gas.

[0073] The fourth embodiment of step S10 of the first processing step can be implemented such that the first source gas, the second source gas, and the third source gas contain the same source gas, and thus the same source gas is continuously injected in the same space. Therefore, the fourth embodiment of step S10 of the first processing step can be implemented such that the adsorption of source material based on the source gas injection and the purging based on the purging gas injection are carried out continuously, so that the adsorption of source material can be carried out in a better manner, thereby increasing the density of metal seed crystals.

[0074] In the fourth embodiment of step S10 of the first processing step, the first source gas, the second source gas, and the third source gas may contain different source gases. Therefore, in the fourth embodiment of step S10 of the first processing step, a multi-metal component may be contained in the membrane. For example, the fourth embodiment of step S10 of the first processing step may form a metal membrane containing one or more metals selected from hafnium (Hf), zirconium (Zr), yttrium (Y), and magnesium (Mg).

[0075] Although not shown in the accompanying drawings, step S10 of the first processing step can be implemented as an embodiment comprising four or more steps of injecting source gas. In this case, step S13 of injecting purge gas can be performed between the multiple steps of injecting source gas.

[0076] The fifth embodiment of step S10 of the first processing step may only include step S11 of injecting the first source gas. In this case, the mixed gas, which is the first source gas, may be injected into the first processing area 110 to perform step S11 of injecting the first source gas, and the mixed gas contains two or more source gases.

[0077] Therefore, the substrate processing method according to the present invention may include several embodiments of step S30, which involves performing a second processing process. Referring below... Figures 1 to 8 Several embodiments of step S30 of the second processing step are described in detail. Figure 8 In the middle, the horizontal axis represents time.

[0078] In a first embodiment of the second processing step S30, the step of injecting a first reactive gas may include step S31 and step S32 of injecting a second reactive gas.

[0079] Step S31, in which the first reactive gas is injected into the second processing area 120, can be performed. Step S31, in which the first reactive gas is injected, can be performed by the second injection unit 42. Step S31, in which the first reactive gas is injected, can be performed while the support unit 3 is stopped rotating.

[0080] Step S32, which involves injecting a second reactive gas into the second processing area 120, can be performed. Step S32 can be performed after step S31, which involves injecting the first reactive gas. Step S32 can be performed by the second injection unit 42. Step S32 can be performed while the support unit 3 is stopped rotating.

[0081] Step S32, which involves injecting a second reactive gas different from the first reactive gas, can be performed. In this case, deposition processes using different types of reactive gases can be sequentially performed on the substrate S, and a doped composite film can be formed. Therefore, the substrate processing method according to the present invention can be implemented as a processing process for manufacturing devices with various characteristics, such as doped devices.

[0082] Step S32, which involves spraying a second reactive gas identical to the first reactive gas, can be performed. In this case, a deposition process using the same type of reactive gas can be repeated on the substrate S, and a thin film with a dense structure can be formed.

[0083] As described above, the first embodiment of the second processing step S30 can be implemented by spraying reactants multiple times by spraying the first reaction gas and the second reaction gas, thereby improving membrane quality.

[0084] Step S30 of the second processing step may include step S33 of injecting purging gas. Purging gas may be injected into the second processing area 120 to perform step S33 of injecting purging gas. Step S33 of injecting purging gas may be performed by the second injection unit 42. Step S33 of injecting purging gas may be performed while the support unit 3 is stopped rotating.

[0085] Step S33, which involves injecting a purging gas, can be performed after step S31, which involves injecting the first reactive gas, and before step S32, which involves injecting the second reactive gas. In other words, step S33 can be performed between step S31, which involves injecting the first reactive gas, and step S32, which involves injecting the second reactive gas. Therefore, the substrate processing method according to the present invention allows the second reactive gas to be injected only after the first reactive gas that has not been deposited on the substrate S has been purged with purging gas, thereby improving the quality of the substrate after the second processing process.

[0086] In a first embodiment of step S30 of the second processing step, the first reactive gas may be injected during the first reaction injection time to perform step S31 of injecting the first reactive gas. The second reactive gas may be injected during the second reaction injection time to perform step S32 of injecting the second reactive gas. In this case, the first reaction injection time and the second reaction injection time may be implemented as the same. Therefore, the substrate processing method according to the invention may be implemented such that the deposition time using the first reactive gas is equal to the deposition time using the second reactive gas. Although not shown in the figures, the first reaction injection time and the second reaction injection time may be implemented as different. In this case, the substrate processing method according to the invention may be implemented such that the deposition time using the first reactive gas is different from the deposition time using the second reactive gas.

[0087] Compared to the first embodiment of step S30 of the second processing step, the second embodiment of step S30 of the second processing step differs in that a plasma generation step S34 is performed instead of a second reactive gas injection step S32. The plasma generation step S34 can be performed by generating plasma in the second processing region 120. The plasma generation step S34 can be performed by the second injection unit 42. Although not shown in the figures, the second injection unit 42 can generate plasma in the second processing region 120 using a plasma electrode and a ground electrode. In this case, the second injection unit 42 can inject the plasma generation gas into the second processing region 120. By performing the plasma generation step S34 in the second embodiment of the second processing step, the density of the film formed by the deposition process using the first reactive gas can be increased, and the step coverage can be improved. Furthermore, the second embodiment of step S30 of the second processing step can perform plasma processing immediately after film formation, thus removing impurities contained in the metal film and increasing the film density.

[0088] Compared to the first embodiment of the second processing step S30, the third embodiment of the second processing step S30 may further include the step S35 of injecting a third reactive gas.

[0089] Step S35 involves injecting a third reactive gas into the second processing area 120. Step S35 can be performed after step S32, which involves injecting the second reactive gas. Step S35 can be performed by the second injection unit 42. Step S35 can also be performed while the support unit 3 is stopped rotating.

[0090] Step S35, which involves injecting a third reactive gas different from the first and second reactive gases, can be performed. In this case, deposition processes using different types of reactive gases can be sequentially performed on the substrate S, and a doped composite film can be formed. Therefore, the substrate processing method according to the present invention can be implemented to perform processing processes for manufacturing devices with a wider variety of properties.

[0091] Step S35 can be performed by spraying a third reactive gas that is the same as at least one of the first and second reactive gases. In this case, the deposition process using the same type of reactive gas can be repeated on the substrate S, and a thin film with a dense structure can be formed.

[0092] As described above, the third embodiment of step S30 of the second processing technology can be implemented by spraying reactants by repeatedly spraying the first reaction gas, the second reaction gas and the third reaction gas, thereby improving membrane quality.

[0093] In a third embodiment of step S30 of the second processing step, step S33' of injecting purging gas can be performed between step S32 of injecting the second reaction gas and step S35 of injecting the third reaction gas.

[0094] Although not shown in the accompanying drawings, step S30 of the second processing step can be implemented as an embodiment comprising four or more steps of injecting reactive gas. In this case, step S33 of injecting purge gas can be performed between the multiple steps of injecting reactive gas.

[0095] The fourth embodiment of step S30 of the second processing step may only include step S31 of injecting the first reactive gas. In this case, the mixed gas, which is the first reactive gas, can be injected into the second processing area 120 to perform step S31 of injecting the first reactive gas, and the mixed gas contains two or more reactive gases.

[0096] Therefore, the substrate processing method according to the present invention can be implemented by combining one of the first to fifth embodiments of performing the first processing process step S10 and one of the first to fourth embodiments of performing the second processing process step S30. In the substrate processing method according to the present invention, in the case of performing one of the first to fifth embodiments of performing the first processing process step S10, performing the second processing process step S30 may only include the step S31 of spraying a first reactive gas and may be implemented by spraying a reactive gas into the second processing region 120. In the substrate processing method according to the present invention, in the case of performing one of the first to fourth embodiments of performing the second processing process step S30, performing the first processing process step S10 may only include the step S11 of spraying a first source gas and may be implemented by spraying a source gas into the first processing region 110.

[0097] Please see Figures 1 to 3 as well as Figure 9 The substrate processing method according to a modified embodiment of the present invention may include the following steps. Figure 9 In the middle, the horizontal axis represents time.

[0098] First, a first processing step using the first source gas SG1 is performed. When the substrate S supported by the support unit 3 is disposed in the first processing area 110, the first processing step using the first source gas SG1 can be performed by injecting the first source gas SG1 into the first processing area 110. The first source gas SG1 can be injected into the first processing area 110 by the first injection unit 41. When the first processing step using the first source gas SG1 is in progress, the support unit 3 can remain in a stopped state.

[0099] Subsequently, upon completion of the first processing step using the first source gas SG1, the substrate moves to the second processing region 120. This can be achieved by moving the substrate S from the first processing region 110 to the second processing region 120. When the substrate S is positioned in the second processing region 120, the rotation of the support unit 3 can be stopped. During the movement of the substrate S from the first processing region 110 to the second processing region 120, the substrate S can pass through the third processing region 130.

[0100] Subsequently, a second processing step using the first reactive gas RG1 is performed. When the substrate S supported by the support unit 3 is disposed in the second processing area 120, the second processing step using the first reactive gas RG1 can be performed by spraying the first reactive gas RG1 into the second processing area 120. The first reactive gas RG1 can be sprayed into the second processing area 120 by the second spraying unit 42. When the second processing step using the first reactive gas RG1 is in progress, the support unit 3 can remain in a stopped state.

[0101] Subsequently, upon completion of the second processing step using the first reaction gas RG1, the substrate is moved to the first processing region 110. This can be achieved by moving the substrate S from the second processing region 120 to the first processing region 110. When the substrate S is positioned in the first processing region 110, the rotation of the support unit 3 can be stopped. During the movement of the substrate S from the second processing region 120 to the first processing region 110, the substrate S can pass through the third processing region 130.

[0102] Subsequently, a first processing step using the second source gas SG2 is performed. When the substrate S supported by the support unit 3 is disposed in the first processing area 110, the first processing step using the second source gas SG2 can be performed by injecting the second source gas SG2 into the first processing area 110. The second source gas SG2 and the first source gas SG1 can be different types of source gases. The second source gas SG2 can be injected into the first processing area 110 by the first injection unit 41. When the first processing step using the second source gas SG2 is in progress, the support unit 3 can remain in a stopped state.

[0103] Subsequently, when the first processing using the second source gas SG2 is completed, the substrate is moved to the second processing area 120. When the first processing using the second source gas SG2 is completed, this step can be performed by rotating the support unit 3 to move the substrate S from the first processing area 110 to the second processing area 120.

[0104] Subsequently, a second processing step using the second reactive gas RG2 is performed. When the substrate S supported by the support unit 3 is placed in the second processing area 120, the second processing step using the second reactive gas RG2 can be performed by injecting the second reactive gas RG2 into the second processing area 120. The second reactive gas RG2 and the first reactive gas RG1 can be different types of reactive gases. The second reactive gas RG2 can be injected into the second processing area 120 by the second injection unit 42. When the second processing step using the second reactive gas RG2 is in progress, the support unit 3 can remain in a stopped state.

[0105] As described above, the substrate processing method according to the modified embodiment of the present invention is implemented by sequentially performing a first processing process using a first source gas SG1, a second processing process using a first reaction gas RG1, a first processing process using a second source gas SG2, and a second processing process using a second reaction gas RG2. Therefore, the substrate processing method according to the modified embodiment of the present invention can be implemented to form a first thin film using the first source gas SG1 and the first reaction gas RG1, and to form a second thin film using the second source gas SG2 and the second reaction gas RG2. Therefore, the substrate processing method according to the modified embodiment of the present invention can perform processing processes for manufacturing devices with various characteristics, such as devices having multiple thin film structures. Furthermore, the substrate processing method according to the modified embodiment of the present invention is implemented by sequentially performing the first processing process using the first source gas SG1, the second processing process using the first reaction gas RG1, the first processing process using the second source gas SG2, and the second processing process using the second reaction gas RG2 while the substrate supported by the support unit 3 is in a stopped state. Therefore, the substrate processing method according to the modified embodiment of the present invention allows adjustment of the cultivation time required for thin film growth in each of the first and second processing processes.

[0106] When the second processing step using the second reaction gas RG2 is completed, the substrate processing method according to the modified embodiment of the present invention can move the substrate to the first processing region 110. When the second processing step using the second reaction gas RG2 is completed, this step can be performed by rotating the support unit 3 to move the substrate S from the second processing region 120 to the first processing region 110. When the substrate S is placed in the first processing region 110, each step can be repeated starting from the step of performing the first processing step using the first source gas SG1. Therefore, by repeating the above-described process, the substrate processing method according to the modified embodiment of the present invention can perform processing on the substrate S.

[0107] This invention is not limited to the above embodiments and figures, and those skilled in the art will clearly recognize that various modifications, changes and substitutions can be made without departing from the spirit and scope of this invention.

Claims

1. A method for processing a plurality of substrates, wherein processing is performed on the plurality of substrates in a processing space divided into a first processing region and a second processing region, the method comprising: When the plurality of substrates supported by the support unit are disposed in the first processing area, a first processing step is performed on the plurality of substrates in the first processing area. The step of rotating the support unit to move the plurality of substrates to the second processing area when the first processing is completed; as well as When the plurality of substrates supported by the support unit are disposed in the second processing area, a second processing step is performed on the plurality of substrates in the second processing area. The first processing step is performed while the support unit is stopped rotating, and includes: The step of injecting a first source gas into the first processing area; The step of injecting the first source gas followed by injecting purge gas into the first processing area; as well as The step of injecting a second source gas, different from the first source gas, into the first processing area. The steps of injecting the first source gas into the first processing area, injecting the purge gas into the first processing area, and injecting the second source gas into the first processing area are performed sequentially. The second processing step is performed while the support unit is stopped rotating, and includes: The step of injecting the first reactive gas into the second processing area; The step of injecting the first reactive gas followed by the step of injecting purge gas into the second processing area; and The step of injecting a second reactive gas, different from the first reactive gas, into the second processing area. The steps of injecting the first reactive gas into the second processing area, injecting the purge gas into the second processing area, and injecting the second reactive gas into the second processing area are performed sequentially.

2. The method of claim 1, wherein the step of performing the first processing includes the step of injecting a third source gas into the first processing area.

3. The method as described in claim 1 or 2, wherein The step of injecting the first source gas into the first processing area involves injecting the first source gas within a first source injection time. The step of injecting the second source gas into the first processing area involves injecting the second source gas during a second source injection time that is different from the first source injection time.

4. The method as claimed in claim 1 or 2, wherein The step of injecting the first source gas into the first processing area involves injecting the first source gas within a first source injection time. The step of injecting the second source gas into the first processing area involves injecting the second source gas within the same second source injection time as the first source injection time.

5. The method of claim 1, wherein The second processing step includes injecting a third reactive gas, different from each of the first and second reactive gases, into the second processing area.

6. The method of claim 1, wherein the step of performing the second processing includes the step of generating plasma in the second processing region.

Images