Magnetic field detection device

Abstract

The magnetic field detection device of the present invention includes a substrate, a first protrusion, a second protrusion, a first magnetoresistive film, a second magnetoresistive film, a first wiring, a second wiring, and one or more patterns. The substrate includes a flat surface. The first protrusion and the second protrusion each include a first inclined surface and a second inclined surface, and are each disposed on the flat surface. The first magnetoresistive film and the second magnetoresistive film are respectively disposed on the first inclined surface and the second inclined surface. The first wiring connects to the first magnetoresistive film disposed on the first inclined surface of the first protrusion and the second protrusion, and the second wiring connects to the second magnetoresistive film disposed on the second inclined surface of the first protrusion and the second protrusion. The first protrusion and the second protrusion are arranged adjacent to each other in a first direction such that the first inclined surface of the first protrusion and the second inclined surface of the second protrusion face each other in a first direction. One or more patterns are disposed on at least one of the first inclined surface of the first protrusion and the second inclined surface of the second protrusion, which face each other.

Description

Technical Field

[0001] This invention relates to a magnetic field detection device equipped with a magnetoresistive element. Background Technology

[0002] To date, several magnetic field detection devices using magnetoresistive elements have been proposed. For example, Patent Document 1 discloses a magnetic field detection device in which the direction of the centerline along the current flow direction of the conductor is different from the direction of the centerline along the longitudinal direction of the magnetoresistive element (see, for example, Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2016-1118 Summary of the Invention

[0006] However, such magnetic field detection devices require further miniaturization.

[0007] Therefore, it is desirable to provide a magnetic field detection device that is suitable for miniaturization while maintaining high reliability.

[0008] A magnetic field detection device according to one embodiment of the present invention includes a substrate, a first protrusion, a second protrusion, a first magnetoresistive effect film, a second magnetoresistive effect film, a first wiring, a second wiring, and one or more patterns. The substrate includes a flat surface. The first and second protrusions each include a first inclined surface and a second inclined surface, and are each disposed on the flat surface. The first inclined surface is inclined to the flat surface, and the second inclined surface is inclined to both the flat surface and the first inclined surface. The first magnetoresistive effect film is disposed on the first inclined surface, and the second magnetoresistive effect film is disposed on the second inclined surface. The first wiring connects the first magnetoresistive effect film disposed on the first inclined surface of the first protrusion and the first magnetoresistive effect film disposed on the first inclined surface of the second protrusion, and the second wiring connects the second magnetoresistive effect film disposed on the second inclined surface of the first protrusion and the second magnetoresistive effect film disposed on the second inclined surface of the second protrusion. The first and second protrusions are arranged adjacent to each other in a first direction such that the first inclined surface of the first protrusion and the second inclined surface of the second protrusion face each other in a first direction. One or more patterns are disposed on at least one of the first inclined surface of the first protrusion and the second inclined surface of the second protrusion, which face each other.

[0009] According to the magnetic field detection device of one embodiment of the present invention, short circuits between the first and second wirings can be avoided while miniaturizing, resulting in high operational reliability. Furthermore, the effects of the present invention are not limited to this, and may also include any of the effects described below. Attached Figure Description

[0010] Figure 1This is a schematic front view showing an example of the overall structure of a magnetic field detection device as one embodiment of the present invention.

[0011] Figure 2 yes Figure 1 The circuit diagram of the magnetic field detection device is shown.

[0012] Figure 3 yes Figure 1 A schematic diagram of the planar structure of the area where the components are formed.

[0013] Figure 4 yes Figure 1 A schematic cross-sectional view of the cross-sectional structure of the component forming region shown.

[0014] Figure 5 yes Figure 3 The diagram shows a cross-sectional view of the laminated section of the magnetoresistive effect film.

[0015] Figure 6 It is used for explanation Figure 5 The diagram shows the relationship between the magnetization direction of the magnetized fixed layer and the magnetization direction of the magnetized free layer.

[0016] Figure 7A yes Figure 1 A cross-sectional schematic diagram of one step in the manufacturing method of the magnetic field detection device shown.

[0017] Figure 7B Is following Figure 7A A cross-sectional diagram of the next process.

[0018] Figure 7C Is following Figure 7B A cross-sectional diagram of the next process.

[0019] Figure 7D Is following Figure 7C A cross-sectional diagram of the next process.

[0020] Figure 7E Is following Figure 7D A cross-sectional diagram of the next process.

[0021] Figure 7F Is following Figure 7E A cross-sectional diagram of the next process.

[0022] Figure 7G Is following Figure 7F A cross-sectional diagram of the next process.

[0023] Figure 7H Is following Figure 7G A cross-sectional diagram of the next process.

[0024] Figure 7I Is following Figure 7H A cross-sectional diagram of the next process.

[0025] Figure 7J Is following Figure 7I A cross-sectional diagram of the next process.

[0026] Figure 7K Is following Figure 7J A cross-sectional diagram of the next process.

[0027] Figure 8 This is a planar schematic diagram of the planar structure of the component forming area of ​​a magnetic field detection device as a reference example.

[0028] Figure 9A yes Figure 8 A schematic cross-sectional view of the cross-sectional structure of the component forming region shown.

[0029] Figure 9B yes Figure 8 A cross-sectional schematic diagram of one step in the manufacturing method of the magnetic field detection device shown.

[0030] Figure 10 This is a schematic front view showing a structural example of a magnetic field detection device as part of a first variation of the present invention.

[0031] Figure 11 This is a schematic front view showing a structural example of a magnetic field detection device as part of a second variation of the present invention.

[0032] Figure 12 This is a schematic front view showing a structural example of a magnetic field detection device as part of a third variation of the present invention.

[0033] Figure 13 It means Figure 12 The diagram shown is a schematic cross-sectional view of a structural example that is part of a magnetic field detection device as a third variation.

[0034] Figure 14A It is used for explanation Figure 12 The first explanatory diagram showing the effect of the magnetic field detection device as a third variation is shown.

[0035] Figure 14B It is used for explanation Figure 12 The second explanatory diagram shows the effect of the magnetic field detection device as a third variation.

[0036] Figure 15 This is a schematic front view showing a structural example of a magnetic field detection device as part of a fourth variation of the present invention.

[0037] Figure 16 It means Figure 15 The diagram shown is a schematic cross-sectional view of a structural example that is part of a magnetic field detection device as a fourth variation.

[0038] Symbol Explanation

[0039] 100 Magnetic Field Detection Device

[0040] 1 substrate

[0041] 2A and 2B magnetic field detection units

[0042] 3-terminal section

[0043] 4 convex parts

[0044] 40 heads top

[0045] 41, 42 inclined plane

[0046] 5. Lower layer cabling group

[0047] 51-53 Lower layer wiring

[0048] 6 Upper-layer cabling group

[0049] 61-63 Upper Layer Cabling

[0050] 31 Magnetization Fixing Layer

[0051] 32 intermediate layers

[0052] 33 Magnetized Free Layer

[0053] 7L and 7R bridging circuits

[0054] 8L and 8R differential detectors

[0055] 9 operational circuits

[0056] DA and DB pseudo-patterns

[0057] Is1~Is4 set current

[0058] Ir1~Ir4 reset current

[0059] MR1~MR4 magnetoresistive effect films

[0060] YZ1~YZ4 element formation area Detailed Implementation

[0061] The embodiments for carrying out the present invention will now be described in detail with reference to the accompanying drawings. All embodiments described below represent preferred examples of the present invention. Therefore, the numerical values, shapes, materials, constituent elements, arrangement positions of constituent elements, and connection methods shown in the following embodiments are merely examples and are not intended to limit the present invention. Therefore, constituent elements in the following embodiments that are not described in the independent claims representing the highest concept of the present invention are described as arbitrary constituent elements. Furthermore, the accompanying drawings are merely schematic diagrams and are not necessarily precise. Additionally, in the various drawings, substantially identical structures are given the same reference numerals, and repeated descriptions are omitted or simplified. The description proceeds in the following order.

[0062] 1. One implementation method

[0063] An example of a magnetic field detection device having a bridging circuit including a first magnetoresistive film and a second magnetoresistive film, wherein the first magnetoresistive film is disposed on a first inclined surface and the second magnetoresistive film is disposed on a second inclined surface.

[0064] 2. Variations

[0065] <1. One implementation method>

[0066] [Structure of the magnetic field detection device 100]

[0067] Initially, refer to Figures 1-6 The structure of the magnetic field detection device 100, which is one embodiment of the present invention, will be described.

[0068] (Overall structure of the magnetic field detection device 100)

[0069] Figure 1 This is a schematic front view showing an example of the overall structure of the magnetic field detection device 100. The magnetic field detection device 100 is a dual-axis magnetic compass capable of detecting, for example, changes in the magnetic field in the Y-axis direction and changes in the magnetic field in the Z-axis direction. The magnetic field detection device 100 can be used, for example, as an electronic compass for detecting the Earth's magnetism.

[0070] like Figure 1As shown, the magnetic field detection device 100 includes, for example, a substrate 1, magnetic field detection units 2A and 2B, and a terminal portion 3. The substrate 1 extends along an XY plane parallel to the X-axis and Y-axis directions. The thickness direction of the substrate 1 is taken as the Z-axis direction. The X-axis, Y-axis, and Z-axis directions are orthogonal to each other. The magnetic field detection units 2A and 2B are arranged adjacent to each other in the central region of the XY plane of the substrate 1. The terminal portion 3 is provided in the peripheral region of the substrate 1 other than the central region where the magnetic field detection units 2A and 2B are located. The terminal portion 3 is electrically connected to the magnetic field detection units 2A and 2B. The terminal portion 3 is an electrode that allows the magnetic field detection units 2A and 2B to be electrically connected to an external device.

[0071] The magnetic field detection unit 2A has a component forming region YZ1 and a component forming region YZ4. The component forming regions YZ1 and YZ4 extend in the Y-axis direction and are arranged adjacent to each other in the X-axis direction. Multiple magnetoresistive effect films MR1 ​​and MR4 (described later) are formed in the component forming regions YZ1 and YZ4. The magnetic field detection unit 2A further has wires C1 and C4. Wire C1 overlaps with the component forming region YZ1 in the Z-axis direction and extends in the Y-axis direction, and wire C4 overlaps with the component forming region YZ4 in the Z-axis direction and extends in the Y-axis direction. Wires C1 and C4 are configured to be supplied with set currents Is1 and Is4 flowing in the +Y direction, respectively. The set currents Is1 and Is4 form set magnetic fields for setting actions to magnetize the magnetized free layers contained in the magnetoresistive effect films MR1 ​​and MR4, respectively. Wires C1 and C4 are further configured to be supplied with reset currents Ir1 and Ir4 flowing in the -Y direction, respectively. The reset currents Ir1 and Ir4 form a reset magnetic field for resetting the magnetization of the magnetized free layers contained in the magnetoresistive films MR1 ​​and MR4, respectively.

[0072] The magnetic field detection unit 2B has a component forming region YZ2 and a component forming region YZ3. Component forming regions YZ2 and YZ3 extend in the Y-axis direction and are adjacent to each other in the X-axis direction. Multiple magnetoresistive effect films MR2 and MR3 (described later) are formed in component forming regions YZ2 and YZ3. The magnetic field detection unit 2B further includes wires C2 and C3. Wire C2 overlaps with component forming region YZ2 in the Z-axis direction and extends in the Y-axis direction, and wire C3 overlaps with component forming region YZ3 in the Z-axis direction and extends in the Y-axis direction. Wires C2 and C3 are configured to be supplied with setting currents Is2 and Is3 flowing in the -Y direction, respectively. Setting currents Is2 and Is3 form setting magnetic fields for setting actions to magnetize the magnetized free layers contained in the magnetoresistive effect films MR2 and MR3, respectively. Wires C2 and C3 are further configured to be supplied with reset currents Ir2 and Ir3 flowing in the +Y direction, respectively. The reset currents Ir2 and Ir3 form a reset magnetic field for resetting the magnetized free layers contained in the magnetoresistive films MR2 and MR3, respectively.

[0073] Figure 2 This is a circuit diagram showing an example of the circuit structure of the magnetic field detection device 100.

[0074] (Circuit structure of magnetic field detection device 100)

[0075] like Figure 2 As shown, the magnetic field detection device 100 includes bridging circuits 7L and 7R, differential detectors 8L and 8R, and a computational circuit 9. In the magnetic field detection device 100, by using these two bridging circuits 7L and 7R, changes in the magnetic field in the Y-axis and Z-axis directions can be detected.

[0076] The bridging circuit 7L includes four magnetoresistive elements 11 to 14. The bridging circuit 7L is formed by connecting magnetoresistive elements 11 and 12 in series and magnetoresistive elements 13 and 14 in series in parallel. More specifically, in the bridging circuit 7L, one end of magnetoresistive element 11 is connected to one end of magnetoresistive element 12 at connection point P1, one end of magnetoresistive element 13 is connected to one end of magnetoresistive element 14 at connection point P2, the other end of magnetoresistive element 11 is connected to the other end of magnetoresistive element 14 at connection point P3, and the other end of magnetoresistive element 12 is connected to the other end of magnetoresistive element 13 at connection point P4. Here, connection point P3 is connected to the power supply Vcc, and connection point P4 is connected to the ground terminal GND. Connection points P1 and P2 are each connected to, for example, the input terminal of a differential detector 8L.

[0077] Magnetoresistive elements 11-14 can detect changes in the signal magnetic field being detected. For example, the resistance of magnetoresistive elements 11 and 13 decreases with the application of a signal magnetic field in the +Y or +Z direction, and increases with the application of a signal magnetic field in the -Y or -Z direction. On the other hand, the resistance of magnetoresistive elements 12 and 14 increases with the application of a signal magnetic field in the +Y or +Z direction, and decreases with the application of a signal magnetic field in the -Y or -Z direction. Therefore, magnetoresistive elements 11 and 13 and magnetoresistive elements 12 and 14 output signals with a phase difference of, for example, 180° according to the change in the signal magnetic field. The signal taken from the bridging circuit 7L flows into the differential detector 8L. When a voltage is applied between connection point P3 and connection point P4, the differential detector 8L detects the potential difference between connection point P1 and connection point P2, i.e., the difference in voltage drop generated by each of magnetoresistive elements 11 and 14, and outputs it as a differential signal SL to the operational circuit 9.

[0078] The bridging circuit 7R includes four magnetoresistive elements 21 to 24. The bridging circuit 7R is formed by connecting magnetoresistive elements 21 and 22 in series and magnetoresistive elements 23 and 24 in series in parallel. More specifically, in the bridging circuit 7R, one end of magnetoresistive element 21 is connected to one end of magnetoresistive element 22 at connection point P5, one end of magnetoresistive element 23 is connected to one end of magnetoresistive element 24 at connection point P6, the other end of magnetoresistive element 21 is connected to the other end of magnetoresistive element 24 at connection point P7, and the other end of magnetoresistive element 22 is connected to the other end of magnetoresistive element 23 at connection point P8. Here, connection point P7 is connected to the power supply Vcc, and connection point P8 is connected to the ground terminal GND. Connection points P5 and P6 are each connected to, for example, the input terminal of a differential detector 8R.

[0079] Magnetoresistive elements 21-24 can detect changes in the signal magnetic field being detected. For example, the resistance of magnetoresistive elements 21 and 23 decreases with the application of a signal magnetic field in the +Y or +Z direction, and increases with the application of a signal magnetic field in the -Y or -Z direction. On the other hand, the resistance of magnetoresistive elements 22 and 24 increases with the application of a signal magnetic field in the +Y or +Z direction, and decreases with the application of a signal magnetic field in the -Y or -Z direction. Therefore, magnetoresistive elements 21 and 23 and magnetoresistive elements 22 and 24 output signals with a phase difference of, for example, 180° according to the change in the signal magnetic field. The signal taken from the bridging circuit 7R flows into the differential detector 8R. When a voltage is applied between connection point P7 and connection point P8, the differential detector 8R detects the potential difference between connection point P5 and connection point P6, i.e., the difference in voltage drop generated by each of magnetoresistive elements 21 and 24, and outputs it as a differential signal SR to the operational circuit 9.

[0080] (Structure of component formation regions YZ1~YZ4)

[0081] Figure 3 This is an enlarged planar schematic diagram of a portion of the component formation region YZ1 to YZ4. Figure 4 This is an enlarged cross-sectional schematic diagram of a portion of the component forming region YZ1 to YZ4. Figure 4 It means along Figure 3 The cross section in the direction of the arrow on line IV-IV is shown.

[0082] like Figure 3 and Figure 4 As shown, the component formation regions YZ1 to YZ4 have a substrate 1, multiple protrusions 4, multiple magnetoresistive effect films MR-A, multiple magnetoresistive effect films MR-B, a lower wiring group 5, and an upper wiring group 6. The multiple magnetoresistive effect films MR-A are connected in series through the lower wiring group 5 and the upper wiring group 6. The multiple magnetoresistive effect films MR-B are connected in series through the lower wiring group 5 and the upper wiring group 6.

[0083] The substrate 1 has a flat surface 1S extending along the XY plane. The substrate 1 can be formed from, for example, Al2O3, SiO2, SiN, etc.

[0084] Multiple protrusions 4 are disposed on the flat surface 1S and protrude upward from the flat surface 1S in the +Z direction. The multiple protrusions 4 can be made of, for example, silicon oxide (SiO2). x Insulating materials such as ) are formed. Multiple protrusions 4 extend, for example, each in the V-axis direction and are arranged adjacently in the W-axis direction. Furthermore, in Figure 3 and Figure 4In the example shown, multiple protrusions 4 are arranged separately on the flat surface 1S. Therefore, the flat surface 1S of the substrate 1 is exposed between two adjacent protrusions 4 in the W-axis direction. Furthermore, although the V-axis and W-axis directions are parallel to the XY plane, they are not parallel to both the X-axis and Y-axis directions. Specifically, the V-axis and W-axis directions form an angle of 45° with respect to both the X-axis and Y-axis directions, for example. Moreover, the V-axis and W-axis directions are orthogonal to each other.

[0085] Each of the plurality of protrusions 4 has an inclined surface 4A and an inclined surface 4B. Inclined surfaces 4A and 4B are not parallel to the flat surface 1S. That is, inclined surfaces 4A and 4B are inclined relative to the flat surface 1S. Inclined surfaces 4A and 4B form a head 4T extending in the V-axis direction and are inclined in a manner that they approach the flat surface 1S as they move away from each other from the head 4T. Therefore, it can be said that inclined surfaces 4A and 4B are not parallel to each other and are inclined relative to each other. Furthermore, inclined surface 4A is a specific example corresponding to the "first inclined surface" of the present invention, and inclined surface 4B is a specific example corresponding to the "second inclined surface" of the present invention.

[0086] Multiple magnetoresistive films MR-A are disposed on the inclined surface 4A of each protrusion 4. The multiple magnetoresistive films MR-A are arranged along the longitudinal direction of the inclined surface 4A, i.e., the V-axis direction. Each of the multiple magnetoresistive films MR-A extends in the V-axis direction such that the V-axis direction is the longitudinal direction. Similarly, multiple magnetoresistive films MR-B are disposed on the inclined surface 4B of each protrusion 4. The multiple magnetoresistive films MR-B are arranged along the longitudinal direction of the inclined surface 4B, i.e., the V-axis direction. Each of the multiple magnetoresistive films MR-B extends in the V-axis direction such that the V-axis direction is the longitudinal direction. Furthermore, the magnetoresistive film MR-A is a specific example corresponding to the "first magnetoresistive film" of the present invention, and the magnetoresistive film MR-B is a specific example corresponding to the "second magnetoresistive film" of the present invention.

[0087] The lower layer wiring group 5 is respectively disposed below the magnetoresistive effect films MR-A and MR-B, that is, between the magnetoresistive effect film MR-A and the inclined surface 4A, and between the magnetoresistive effect film MR-B and the inclined surface 4B. The lower layer wiring group 5 includes multiple lower layer wirings 51 to 53. The multiple lower layer wirings 51 are interconnected and disposed adjacently on the inclined surface 4A of the same protrusion 4 below the two magnetoresistive effect films MR-A. The multiple lower layer wirings 52 are interconnected and disposed adjacently on the inclined surface 4B of the same protrusion 4 below the two magnetoresistive effect films MR-B. The multiple lower layer wirings 53 are interconnected and disposed below the two magnetoresistive effect films MR-A on the inclined surface 4A of different protrusions 4.

[0088] The upper layer wiring group 6 is respectively disposed on the upper layer of magnetoresistive effect films MR-A and MR-B, that is, on the side opposite to the inclined plane 4A when viewed from the magnetoresistive effect film MR-A, and on the side opposite to the inclined plane 4B when viewed from the magnetoresistive effect film MR-B. The upper layer wiring group 6 includes multiple upper layer wirings 61 to 63. Multiple upper layer wirings 61 are interconnected and disposed adjacently on the upper layer of two magnetoresistive effect films MR-A on the inclined plane 4A of the same protrusion 4. Multiple upper layer wirings 62 are interconnected and disposed adjacently on the upper layer of two magnetoresistive effect films MR-B on the inclined plane 4B of the same protrusion 4. Multiple upper layer wirings 63 are interconnected and disposed on the upper layer of two magnetoresistive effect films MR-B on the inclined plane 4B of different protrusions 4.

[0089] In this way, multiple magnetoresistive effect films MR-A disposed on the inclined surface 4A are connected in series to form a magnetoresistive effect film array by a lower layer wiring 53, an upper layer wiring 61, and a lower layer wiring 51. That is, the magnetoresistive effect film MR-A is sandwiched between the upper layer wiring 61 and the lower layer wiring 51 or between the upper layer wiring 61 and the lower layer wiring 53. Furthermore, the lower layer wiring 53SP at the beginning and the lower layer wiring 53E at the end of the magnetoresistive effect film array including multiple magnetoresistive effect films MR-A are respectively connected to different terminal portions 3.

[0090] Similarly, multiple magnetoresistive effect films MR-B disposed on the inclined surface 4B are connected in series by upper wiring 63, lower wiring 52, and upper wiring 62 to form a magnetoresistive effect film array. That is, the magnetoresistive effect film MR-B is sandwiched between upper wiring 63 and lower wiring 52 or between upper wiring 62 and lower wiring 52. Furthermore, the upper wiring 63SP at the beginning and the upper wiring 63E at the end of the magnetoresistive effect film array including multiple magnetoresistive effect films MR-B are respectively connected to different terminal portions 3.

[0091] Here, the lower layer routing 53 and the upper layer routing 63 intersect at least one of the inclined planes 4A and 4B, forming an intersection point XP. At the intersection point XP, the lower layer routing 53 and the upper layer routing 63 can also be substantially orthogonal. Furthermore, in Figure 3 In the example shown, intersection point XP is provided on both inclined planes 4A and 4B. On the other hand, the lower layer wiring 53 and the upper layer wiring 63 do not intersect each other on the flat surface 1S of the substrate 1. Here, "intersection" refers to the positional relationship where the upper layer wiring 63 crosses the lower layer wiring 53 when viewed in the lamination direction, i.e., the Z-axis direction. Furthermore, "intersection" includes a position where the upper layer wiring 63 is provided at least one of the two ends of the lower layer wiring 53 in the width direction and overlaps with each other in the Z-axis direction. That is, in this embodiment, even when the upper layer wiring 63 and the lower layer wiring 53 extend side by side, if the edge of the lower layer wiring 53 in the width direction is in a position where it overlaps with the upper layer wiring 63 in the Z-axis direction, then the lower layer wiring 53 and the upper layer wiring 63 intersect.

[0092] The lower layer wirings 51-53 and the upper layer wirings 61-63 can be formed of highly conductive non-magnetic metals such as Al (aluminum), Cu (copper), Ag (silver), and Au (gold) and their alloys. Furthermore, both the lower layer wirings 51-53 and the upper layer wirings 61-63 can be single-layer structures or multi-layer structures. Moreover, the constituent materials of the lower layer wirings 51-53 and the upper layer wirings 61-63 can be the same or different.

[0093] Multiple magnetoresistive films MR-A formed in the element formation region YZ1 are connected in series to form a magnetoresistive element 11 in a bridging circuit 7L. Additionally, multiple magnetoresistive films MR-B formed in the element formation region YZ1 are connected in series to form a magnetoresistive element 21 in a bridging circuit 7R.

[0094] Multiple magnetoresistive films MR-A formed in the element formation region YZ2 are connected in series to form a magnetoresistive element 12 in a bridging circuit 7L. Additionally, multiple magnetoresistive films MR-B formed in the element formation region YZ2 are connected in series to form a magnetoresistive element 22 in a bridging circuit 7R.

[0095] Multiple magnetoresistive films MR-A formed in the element formation region YZ3 are connected in series to form a magnetoresistive element 13 in a bridging circuit 7L. Additionally, multiple magnetoresistive films MR-B formed in the element formation region YZ3 are connected in series to form a magnetoresistive element 23 in a bridging circuit 7R.

[0096] Multiple magnetoresistive films MR-A formed in the element formation region YZ4 are connected in series to form a magnetoresistive element 14 in a bridging circuit 7L. Additionally, multiple magnetoresistive films MR-B formed in the element formation region YZ4 are connected in series to form a magnetoresistive element 24 in a bridging circuit 7R.

[0097] Furthermore, by combining the aforementioned magnetic field detection device 100 with a magnetic field detection unit (referred to as magnetic field detection unit 2C for convenience) capable of detecting magnetic field changes in the X-axis direction, a 3-axis magnetic compass capable of detecting magnetic field changes in 3 directions can be realized. The magnetic field detection unit 2C mentioned here can have substantially the same structure as the aforementioned magnetic field detection device 100, except that, for example, multiple magnetoresistive effect films are formed on a surface parallel to the flat surface 1S.

[0098] Here, the magnetoresistive film MR-A constituting magnetoresistive element 11 and the magnetoresistive film MR-B constituting magnetoresistive element 21, i.e., the magnetoresistive films MR-A and MR-B formed in the element formation region YZ1, are collectively referred to as magnetoresistive film MR1. Furthermore, the magnetoresistive film MR-A constituting magnetoresistive element 12 and the magnetoresistive film MR-B constituting magnetoresistive element 22, i.e., the magnetoresistive films MR-A and MR-B formed in the element formation region YZ2, are collectively referred to as magnetoresistive film MR2. Additionally, the magnetoresistive film MR-A constituting magnetoresistive element 13 and the magnetoresistive film MR-B constituting magnetoresistive element 23, i.e., the magnetoresistive films MR-A and MR-B formed in the element formation region YZ3, are collectively referred to as magnetoresistive film MR3. Furthermore, the magnetoresistive effect film MR-A constituting the magnetoresistive effect element 14 and the magnetoresistive effect film MR-B constituting the magnetoresistive effect element 24, i.e., the magnetoresistive effect films MR-A and MR-B formed in the element formation region YZ4, are collectively referred to as the magnetoresistive effect film MR4. Figure 5 The cross-section of the stacked structure of magnetoresistive effect films MR1 ​​to MR4 is shown schematically in the figure.

[0099] like Figure 5 As shown, the magnetoresistive films MR1 ​​to MR4 have a spin valve structure with multiple functional films, including magnetic layers, stacked together. Specifically, the magnetoresistive films MR1 ​​to MR4 have a stacked structure in which a magnetization fixed layer 31, an intermediate layer 32, and a magnetization free layer 33 are stacked sequentially. The magnetization fixed layer 31 has a magnetization J31 fixed in a predetermined direction. The intermediate layer 32 is a non-magnetic material. In the magnetization free layer 33, the direction of magnetization J33 changes according to the direction of the magnetic flux of the signal magnetic field. The magnetization fixed layer 31, the intermediate layer 32, and the magnetization free layer 33 are all thin films extending along the inclined plane 4A or the inclined plane 4B. The direction of magnetization J33 of the magnetization free layer 33 can be rotated in the plane along the inclined plane 4A or the inclined plane 4B. Furthermore, as described above, the magnetoresistive films MR1 ​​to MR4 all extend in the V-axis direction. Therefore, the magnetoresistive films MR1 ​​to MR4 each exhibit shape anisotropy in the V-axis direction. Therefore, the direction of magnetization J33 of the initial magnetized free layer 33 is approximately parallel to the V-axis direction.

[0100] In addition, the fixed orientation of each magnetization J31 of the magnetoresistive films MR1 ​​to MR4 is set as follows: Figure 6 As shown. Figure 6 This is a planar schematic diagram illustrating the relationship between the magnetization J31 direction of the magnetized fixed layer 31 and the magnetization J33 direction of the magnetized free layer 33 in the initial state, for magnetoresistive effect films MR1 ​​to MR4 respectively. Figure 6 As shown in (A), in the magnetoresistive film MR1, for example, the direction of magnetization of J31 is +W and the direction of magnetization of J33 is +V. Additionally, as... Figure 6 As shown in (B), in the magnetoresistive film MR2, for example, the direction of magnetization of J31 is -W and the direction of magnetization of J33 is -V. Additionally, as... Figure 6 As shown in (C), in the magnetoresistive film MR3, for example, the direction of magnetization of J31 is +W and the direction of magnetization of J33 is -V. Furthermore, as... Figure 6 As shown in (D), in the magnetoresistive film MR4, for example, the direction of magnetization of J31 is -W and the direction of magnetization of J33 is +V.

[0101] In this manner, the fixing direction of the magnetization J31 of each magnetoresistive film MR1 to MR4 is approximately parallel to the W-axis direction, which is orthogonal to the V-axis direction. Therefore, the W-axis direction is the direction in which the magnetoresistive films MR1 ​​to MR4 exhibit high sensitivity to signal magnetic fields. However, while the magnetization fixing layer 31 of magnetoresistive films MR1 ​​and MR3 each has a magnetization J31 fixed in the +W direction, the magnetization fixing layer 31 of magnetoresistive films MR2 and MR4 each has a magnetization J31 fixed in the -W direction. Therefore, when the resistance values ​​of magnetoresistive films MR1 ​​and MR3 increase due to the application of a signal magnetic field, the resistance values ​​of magnetoresistive films MR2 and MR4 decrease. Conversely, when the resistance values ​​of magnetoresistive films MR1 ​​and MR3 decrease due to the application of a signal magnetic field, the resistance values ​​of magnetoresistive films MR2 and MR4 increase.

[0102] Furthermore, each of the magnetized fixed layer 31, intermediate layer 32, and magnetized free layer 33 constituting the magnetoresistive effect film MR1 to MR4 can be a single-layer structure or a multi-layer structure composed of multiple layers.

[0103] The magnetization fixing layer 31 is made of strongly magnetic materials such as Co (cobalt), CoFe (cobalt-iron alloy), and CoFeB (cobalt-iron-boron alloy). Furthermore, in the magnetoresistive effect films MR1 ​​to MR4, an anti-magnetic layer (not shown) can be provided adjacent to the magnetization fixing layer 31 on the side opposite to the intermediate layer 32. Such an anti-magnetic layer is made of anti-magnetic materials such as platinum-manganese alloy (PtMn) or iridium-manganese alloy (IrMn). In the magnetoresistive effect films MR1 ​​to MR4, the anti-magnetic layer has the following effect: the spin magnetic moment in the +W direction and the spin magnetic moment in the -W direction are completely canceled out, thereby fixing the magnetization J31 direction of the adjacent magnetization fixing layer 31 in the +W or -W direction.

[0104] When the spin valve structure functions as a magnetic tunnel junction (MTJ) film, the intermediate layer 32 is a non-magnetic tunnel-blocking layer made of, for example, magnesium oxide (MgO), and is a thin layer with a thickness sufficient to allow tunneling current to pass through according to quantum mechanics. Alternatively, the intermediate layer 32 can also be made of non-magnetic metals such as ruthenium (Ru), platinum group elements (Au), or copper (Cu). In this case, the spin valve structure functions as a giant magnetoresistive effect (GMR) film.

[0105] The magnetized free layer 33 is a soft, strongly magnetic layer formed from substantially the same material. The magnetized free layer 33 is composed of, for example, CoFe, NiFe, or CoFeB.

[0106] [Operation and Function of Magnetic Field Detection Device 100]

[0107] In the magnetic field detection device 100 of this embodiment, the change of the signal magnetic field applied to the magnetic field detection device 100 can be detected in the arithmetic circuit 9 based on the differential signal SL and the differential signal SR.

[0108] (Position / Reset Action)

[0109] However, in the magnetic field detection device 100, before performing the signal magnetic field detection operation, it is desirable to align the magnetization of the magnetization free layers of each magnetoresistive element in a predetermined direction. This is for the purpose of performing a more accurate signal magnetic field detection operation. Specifically, an external magnetic field of known magnitude is alternately applied in the predetermined direction and the opposite direction. This is referred to as the setting and resetting operation of the magnetization J33 of the magnetization free layer 33.

[0110] In the magnetic field detection device 100 of this embodiment, such as Figure 1As shown, the setting action is performed by supplying setting currents Is1 to Is4 to conductors C1 to C4 respectively. By supplying setting currents Is1 to Is4 to conductors C1 to C4, setting magnetic fields are generated around conductors C1 to C4 respectively. As a result, in the magnetic field detection unit 2A, setting magnetic fields in the -X direction can be applied to the magnetoresistive film MR1 of magnetoresistive elements 11 and 21 and the magnetoresistive film MR4 of magnetoresistive elements 14 and 24 respectively. Consequently, the magnetization J33 of the magnetized free layer 33 of magnetoresistive films MR1 ​​and MR4 is oriented towards the -X direction, thus performing the setting action. On the other hand, in the magnetic field detection unit 2B, setting magnetic fields in the +X direction can be applied to the magnetoresistive film MR2 of magnetoresistive elements 12 and 22 and the magnetoresistive film MR3 of magnetoresistive elements 13 and 23 respectively. Therefore, the magnetization J33 of the magnetized free layer 33 of the magnetoresistive effect films MR2 and MR3 is oriented towards the +X direction, and a positioning action is performed.

[0111] Furthermore, a reset operation is performed by supplying reset currents Ir1 to Ir4 to conductors C1 to C4, respectively. By supplying reset currents Ir1 to Ir4 to conductors C1 to C4, reset magnetic fields are generated around conductors C1 to C4. As a result, in the magnetic field detection unit 2A, reset magnetic fields in the +X direction can be applied to the magnetoresistive films MR1 ​​and MR4, respectively. Consequently, the magnetization J33 of the magnetized free layer 33 of the magnetoresistive films MR1 ​​and MR4 is aligned with the +X direction, thus performing a reset operation. On the other hand, in the magnetic field detection unit 2B, a reset magnetic field in the -X direction can be applied to the magnetoresistive films MR2 and MR3, respectively. Consequently, the magnetization J33 of the magnetized free layer 33 of the magnetoresistive films MR2 and MR3 is aligned with the -X direction, thus performing a reset operation.

[0112] [Manufacturing method of magnetic field detection device 100]

[0113] Secondly, refer to Figures 7A-7I The manufacturing method of the magnetic field detection device 100 is explained. Figures 7A-7I This is a cross-sectional schematic diagram of each step in the manufacturing process of the magnetic field detection device 100, particularly the lower wiring group 5, the magnetoresistive effect films MR-A and MR-B, and the upper wiring group 6.

[0114] Initially, after preparing substrate 1, as follows Figure 7A As shown, on the flat surface 1S, a plurality of protrusions 4 extending in the V-axis direction are arranged in the W-axis direction. Then, a conductive material film 5Z is formed in such a way that it covers the substrate 1 and the plurality of protrusions 4 as a whole.

[0115] Secondly, such as Figure 7B As shown, a magnetoresistive effect film MRZ is formed by covering a conductive material film 5Z.

[0116] Secondly, such as Figure 7C As shown, magnetoresistive effect films MR-A and MR-B of a predetermined shape are formed by selectively etching the magnetoresistive effect film MRZ using photolithography or similar methods. Then, an insulating film Z1 is formed by filling the area around the magnetoresistive effect films MR-A and MR-B.

[0117] Secondly, such as Figure 7D As shown, a first resist layer RS1 and a second resist layer RS2 are sequentially laminated to cover magnetoresistive effect films MR-A and MR-B and an insulating film Z1, thereby forming two layers resisting RS.

[0118] Secondly, such as Figure 7E As shown, after selectively exposing two layers of resist RS, the exposed portions of the two layers of resist RS are removed using a developer. This forms a two-layer resist pattern RP that selectively covers the conductive material film 5Z. The two-layer resist pattern RP consists of a first resist pattern RP1 and a second resist pattern RP2.

[0119] Secondly, such as Figure 7F As shown, two layers of resist patterns RP are used as a mask to selectively etch the insulating film Z1 and the conductive material film 5Z. That is, portions of the insulating film Z1 and the conductive material film 5Z not covered by the two layers of resist patterns RP are removed. This forms the lower layer wiring group 5 on the inclined surfaces 4A and 4B of each protrusion 4. Furthermore, in Figure 7F In the cross-section shown, lower layer wiring 51 is formed on the inclined surface 4A of each protrusion 4, and lower layer wiring 52 is formed on the inclined surface 4B of each protrusion 4. Then, an insulating film Z2 is formed by filling the portion where the insulating film Z1 and the conductive material film 5Z have been removed, and two layers of resist pattern RP are peeled off.

[0120] Secondly, such as Figure 7G As shown, two resist patterns RP-2 are formed on the magnetoresistive effect films MR-A and MR-B. In this case, the width of the two resist patterns RP-2 in the W-axis direction is narrower than the width of the underlying wirings 51 and 52 in the W-axis direction.

[0121] Secondly, such as Figure 7H As shown, insulating film Z3 is formed in a manner that covers the entirety of two layers of resist pattern RP-2, insulating film Z1, and insulating film Z2.

[0122] Secondly, by removing the two layers of resist pattern RP-2, such as Figure 7I As shown, multiple openings Z3K are formed on the insulating film Z3. The magnetoresistive effect films MR-A and MR-B are exposed above these openings Z3K.

[0123] After that, as Figure 7JAs shown, the upper wiring group 6 is formed by filling multiple openings Z3K set on the insulating film Z3. Figure 7J In the middle, it represents the upper-layer wiring 61, 62 in upper-layer wiring group 6. Finally, as Figure 7K As shown, the insulating film Z4 is formed in a manner that covers the entire insulating film Z3 and the upper wiring group 6, thus completing the manufacturing of the magnetic field detection device 100.

[0124] [Effect of the magnetic field detection device 100]

[0125] In this embodiment of the magnetic field detection device 100, the lower layer wiring 53 and the upper layer wiring 63 intersect on at least one of the inclined planes 4A and 4B, while on the flat plane 1S, the lower layer wiring 53 and the upper layer wiring 63 do not intersect. That is, as... Figure 3 As shown, the intersection point XP is located on at least one of the inclined planes 4A and 4B, while there is no intersection point XP on the flat plane 1S. Therefore, the possibility of a short circuit between the lower layer routing 53 and the upper layer routing 63 can be reduced. This is because, as described below, the lower layer routing 53 formed on the flat plane 1S is prone to burrs, while the lower layer routing 53 formed on the inclined planes 4A or 4B is less prone to burrs. Therefore, by preventing the upper layer routing 63 from intersecting with the lower layer routing 53 formed on the flat plane 1S, and instead ensuring that the lower layer routing 53 formed on the inclined planes 4A or 4B intersects with the upper layer routing 63, it is possible to prevent the lower layer routing 53 and the upper layer routing 63 from unintentionally becoming connected through the burrs of the lower layer routing 53.

[0126] Figure 8 This is a schematic front view of the component forming area of ​​the magnetic field detection device 1000, which is used as a reference example, corresponding to this embodiment. Figure 3 .like Figure 8 As shown, the magnetic field detection device 1000, as a reference example, has intersections XP1 and XP2 formed on the flat surface 1S of the substrate 1. Figure 9A It is along Figure 8 A schematic diagram of the cross-section in the direction of the arrow along the IX-IX section is shown. Figure 9A As shown, at intersection XP1, a short-circuit portion SH is formed through the burr BR. The burr BR is generated at the end of the flat surface 1S in the lower layer routing 52, 53. This burr BR is generated during the patterning of the lower layer routing 52, 53. Figure 9BThis is a cross-sectional schematic diagram of a step in the manufacturing method of the magnetic field detection device 1000, specifically showing the state immediately after the selective etching of the lower layer wirings 52, 53 has been performed. The lower layer wirings 52, 53 of the magnetic field detection device 1000 in the reference example are similar to the lower layer wiring group 5 of the magnetic field detection device 100 of this embodiment, patterned by selectively etching a conductive material film using two layers of resist patterns RP as a mask. However, in the magnetic field detection device 1000 of the reference example, a portion of the lower layer wirings 52, 53 extends in a manner that covers not only the inclined surfaces 4A, 4B but also a portion of the flat surface 1S. Generally, the thickness of the resist pattern attached to the flat surface is usually thicker than the thickness of the resist pattern attached to the inclined surface. Therefore, as... Figure 9B As shown, the thickness of the first resist pattern RP1 formed on the flat surface 1S is typically thicker than the thickness of the first resist pattern RP1 formed on the inclined surfaces 4A, 4B. If a conductive material film is selectively etched using two layers of resist patterns RP including such a first resist pattern RP1, then as Figure 9B As shown, the removed conductive material film will re-attach to the end face of the first resist pattern RP1, forming a burr BR that contacts the end faces of the lower layer wirings 52, 53. After the two layers of resist patterns RP are peeled off, the burr BR usually remains as residue on the flat surface 1S. Subsequently, if the upper layer wiring 63 is formed, the burr BR will be in contact with the upper layer wiring 63. Because the burr BR is also in contact with the end faces of the lower layer wirings 52, 53, the upper layer wiring 63 will become conductive with the lower layer wirings 52, 53.

[0127] In this embodiment, the magnetic field detection device 100 does not have intersection points XP on the flat surface 1S. Therefore, even if burrs BR are formed, the upper layer wiring group 6 is not provided at the position where it overlaps with the burrs BR in the Z-axis direction. Therefore, short circuits between the lower layer wiring group 5 and the upper layer wiring group 6 can be avoided.

[0128] For the reasons mentioned above, the density of magnetoresistive elements per unit area can be increased in the magnetic field detection device 100, while suppressing the generation of short circuits. Therefore, the magnetic field detection device 100 of this embodiment can achieve miniaturization without compromising operational reliability.

[0129] <2. Variations>

[0130] While the present invention has been described above with examples of embodiments, it is not limited to these embodiments and various modifications are possible. For instance, although a full-bridge circuit is formed using four magnetoresistive elements in the above embodiments, a half-bridge circuit can also be formed using, for example, two magnetoresistive elements in the present invention. Furthermore, the shapes and sizes of the multiple magnetoresistive films can be the same or different. Additionally, the dimensions and designs of each component are merely examples and are not limited thereto.

[0131] (First variation)

[0132] In the above embodiments, such as Figure 3 As shown, only on the inclined surfaces 4A and 4B of the protrusion 4 are areas where the upper layer wiring group 6 and the lower layer wiring group 5 overlap in the Z-axis direction. However, the present invention includes, for example... Figure 10 The concept of the magnetic field detection device 100A shown is a first modified example. Figure 10 This is a schematic front view showing a part of the magnetic field detection device 100A, which is a first modification of the present invention. Figure 10 In the magnetic field detection device 100A, an area is provided on a flat surface 1S without protrusions 4 where an upper layer wiring 63 and a lower layer wiring 53 overlap in the Z-axis direction. However, in the magnetic field detection device 100A, on the flat surface 1S, the upper layer wiring 63 and the lower layer wiring 53 do not intersect each other, but extend side by side along substantially the same direction (e.g., the W-axis direction). That is, the upper layer wiring 63 includes a flat portion 63S provided on the flat surface 1S and extending in the W-axis direction, and the lower layer wiring 53 includes a flat portion 53S provided on the flat surface 1S and extending in the W-axis direction. Figure 10In the magnetic field detection device 100A shown, the flat portion 53S is connected to the portion 53A of the lower layer wiring 53 that is disposed on the inclined surface 4A, forming an approximately L-shape when viewed from above. Similarly, the flat portion 63S is connected to the portion 63B of the upper layer wiring 63 that is disposed on the inclined surface 4B, forming an approximately L-shape when viewed from above. The flat portions 53S of the lower layer wiring 53 are disposed between the flat portions 63S of the upper layer wiring 63 and the flat surface 1S, overlapping each other in the Z-axis direction. Furthermore, the width W53 of the flat portion 53S in the V-axis direction is wider than the width W63 of the flat portion 63S that overlaps with the flat portion 53S in the Z-axis direction, and the two end edges of the flat portion 63S in the V-axis direction are located inside the flat portion 53S. Therefore, the upper layer wiring 63 does not exist at the position where it overlaps with the two end edges of the lower layer wiring 53 in the Z-axis direction. Therefore, even if burrs are generated at both ends of the flat portion 53S of the lower layer wiring 53, short circuits between the upper layer wiring 63 and the lower layer wiring 53 through such burrs can be avoided. Thus, the effects of the present invention can be achieved. Furthermore, in the magnetic field detection device 100A, the inclined surfaces 4A and 4B are all inclined along the W-axis direction extending from the flat portions 53S of the lower layer wiring 53 and the flat portions 63S of the upper layer wiring 63 provided on the flat surface 1S. Therefore, compared to the case where the flat portions 53S of the lower layer wiring 53 and the flat portions 63S of the upper layer wiring 63 extend in an inclined direction, for example, in a direction different from both the W-axis and V-axis directions, the lower layer wiring 53 and the upper layer wiring 63 can be designed more efficiently using a limited area, contributing to the miniaturization of the magnetic field detection device 100A. Furthermore, by effectively designing the lower layer wiring 53 and the upper layer wiring 63, it is possible to shorten the length of each of the lower layer wiring 53 and the upper layer wiring 63. Furthermore, during the etching process for forming the lower layer wirings 51-53 on the inclined surfaces 4A, 4B extending in the V-axis direction, the adhesion of reattachment can be reduced. Also, the W-axis direction is a specific example corresponding to the "first direction" of the present invention, and the V-axis direction is a specific example corresponding to the "second direction" of the present invention. Furthermore, the flat portion 53S is a specific example corresponding to the "first flat portion" of the present invention, and the flat portion 63S is a specific example corresponding to the "second flat portion" of the present invention. Additionally, portion 53A is a specific example corresponding to the "first inclined portion" of the present invention.

[0133] (Second variation)

[0134] Furthermore, although in Figure 10 In the magnetic field detection device 100A shown as a first modified example, the flat portion 53S and the flat portion 63S overlap, but this disclosure is not limited to this. For example Figure 11As shown in the second modified example of the magnetic field detection device 100B, the flat portions 53S and 63S provided on the flat surface 1S can each extend along the W-axis direction in a position that does not overlap with each other. Furthermore, although in Figure 10 In the magnetic field detection device 100A shown, the flat portion 53S and the portion 53A of the lower wiring 53 disposed on the inclined surface 4A are connected to form an approximate L-shape when viewed from above, but the present invention is not limited to this. Figure 11 As shown, the flat portion 53S can also be connected to the portion 53A of the lower layer wiring 53 that is disposed on the inclined surface 4A, forming a roughly T-shape when viewed from above. Similarly, although in Figure 10 In the magnetic field detection device 100A shown, the flat portion 63S and the portion 63B of the upper wiring 63 disposed on the inclined surface 4B are connected to form an approximate L-shape when viewed from above, but the present invention is not limited thereto. Figure 11 As shown, the flat portion 63S can also be connected to the portion 63B of the upper wiring 63 that is disposed on the inclined surface 4B, forming a roughly T-shape when viewed from above. Furthermore, Figure 11 This is a schematic front view showing a part of the magnetic field detection device 100B, which is a second variation of the present invention. Figure 11 The magnetic field detection device 100B, due to the aforementioned structure, allows for the effective design of the lower layer wiring 53 and the upper layer wiring 63, potentially shortening the lengths of both. This is particularly relevant with... Figure 10 The magnetic field detection device shown is different from the 100A shown, according to Figure 11 The magnetic field detection device 100B can connect the flat portion 53S to the middle portion of the portion 53A provided on the inclined surface 4A, excluding the end in the extending direction (V-axis direction). Furthermore, according to... Figure 11 The magnetic field detection device 100B can connect the flat portion 63S to the middle portion of the portion 63B provided on the inclined surface 4B, excluding the end in the extending direction (V-axis direction). Therefore, with Figure 10 Compared to the magnetic field detection device 100A shown, the design freedom of the lower wiring group 5 and the upper wiring group 6 is greatly improved, and it is also beneficial to reduce wiring resistance. Furthermore, according to... Figure 11 The magnetic field detection device 100B, during the etching process of the lower layer wiring 51-53 formed on the inclined surfaces 4A, 4B extending in the V-axis direction, can reduce the adhesion of re-attachments. Here, the extension direction of the flat portion 53S can be substantially orthogonal to the extension direction of the portion 53A. This is because compared to the case where the extension direction of the flat portion 53S is inclined to the extension direction of the portion 53A (greater than 0° and less than 90°), the amount of re-attachment can be reduced even more. Therefore, the possibility of unintentional conduction between the lower layer wiring 53 and the upper layer wiring 63 can be reduced more sufficiently.

[0135] (Third variation)

[0136] In addition, Figure 3 In one embodiment of the magnetic field detection device 100 shown, the lower wiring group 5 and the upper wiring group 6 disposed on the inclined surfaces 4A and 4B are conductors electrically connecting multiple magnetoresistive effect films MR-A and MR-B. However, this disclosure is not limited thereto. For example... Figure 12 and Figure 13 As shown in the third modified example of the magnetic field detection device 100C, one or more pseudo-patterns DB can be set on the inclined plane 4B. Figure 12 This is a schematic front view showing a part of the magnetic field detection device 100C, which is a third variation of the present invention. Additionally, Figure 13 It is along Figure 12 A cross-sectional view showing the direction of the arrow along line XIII-XIII. (See attached image.) Figure 12 and Figure 13 As shown, by setting one or more pseudo-patterns DB on the inclined plane 4B, when forming the lower layer wiring 51, 53 on the inclined plane 4A adjacent to the flat plane 1S in the W-axis direction, it is possible to suppress the generation of burrs at the edges of the lower layer wiring 51, 53, or even if burrs are generated, their size can be reduced.

[0137] Here, as Figure 14A and Figure 14B As shown in the example, the case where, in the case of two adjacent opposing inclined planes 4A and 4B sandwiching a flat plane 1S along the W-axis, a lower-layer wiring 53 is formed on inclined plane 4A, while no lower-layer wiring or pseudo-pattern is formed on inclined plane 4B, will be explained. More specifically, as shown in the example... Figure 14A and Figure 14B As shown, for two adjacent protrusions 4L and 4R in the W-axis direction, a lower layer wiring 53 and a magnetoresistive effect film MR-A are formed on the inclined surface 4A of the protrusion 4L on the left side of the paper, while no lower layer wiring and magnetoresistive effect film are formed on the inclined surface 4B of the protrusion 4R on the right side of the paper. In this case, firstly, after forming the conductive material film 5Z covering the substrate 1 and the multiple protrusions 4 as a whole, along with the magnetoresistive effect films MR-A, MR-B and the insulating film Z1, as follows... Figure 14A As shown, a two-layer resist pattern RP is formed, selectively covering a conductive material film 5Z. The two-layer resist pattern RP is disposed on the inclined surfaces 4A and 4B of the protrusion 4L. Next, as... Figure 14BAs shown, using a two-layer resist pattern RP as a mask, the insulating film Z1 and the conductive material film 5Z are selectively etched. That is, the portions of the insulating film Z1 and the conductive material film 5Z not covered by the two-layer resist pattern RP are removed. As a result, lower layer wiring 53 and lower layer wiring 52 are formed on the inclined surfaces 4A and 4B of the protrusion 4L, respectively. At this time, reattachment RD accumulates on the end faces of the two-layer resist pattern RP provided on the inclined surface 4A. The reattachment RD is mainly debris formed on the inclined surface 4B of the opposing protrusion 4R during the etching of the insulating film Z1 and the conductive material film 5Z. Even after the two-layer resist pattern RP is stripped away, such reattachment remains as burrs on the edges of the lower layer wiring 53 formed on the inclined surface 4A of the protrusion 4L. Such burrs may hinder the formation of the upper layer wiring group 6 above the lower layer wiring 53, or may cause the lower layer wiring 53 and the upper layer wiring group 6 to unintentionally short-circuit. Therefore, by setting a dummy pattern DB on the inclined surface 4B as in the magnetic field detection device 100C of this modification, it is possible to effectively suppress the generation of burrs at the lower layer wiring 53 formed on the inclined surface 4A opposite to the inclined surface 4B on which the dummy pattern DB is set.

[0138] Furthermore, such as Figure 13 As shown, in the height direction (Z-axis direction) orthogonal to the flat plane 1S, for example, the upper position DBH of the pseudo-pattern DB based on the flat plane 1S can be substantially equal to the upper position 53H of the lower layer routing 53 based on the flat plane 1S. This is because, compared to the case where the upper position DBH and the upper position 53H are different in the Z-axis direction, it is more effective to suppress the generation of burrs at the lower layer routing 53.

[0139] The dummy pattern DB is, for example, a structure that does not have wiring connections for communication or power supply with electronic devices such as magnetoresistive films MR-A and MR-B, lower wiring group 5, and upper wiring group 6. That is, although the dummy pattern DB can be made of conductive material, it is insulated from both the lower wiring group 5 and the upper wiring group 6. Furthermore, the constituent material of the dummy pattern DB can be the same as that of the lower wiring group 5 and the upper wiring group 6. This is because the dummy pattern DB can be formed simultaneously with either the lower wiring group 5 or the upper wiring group 6, improving manufacturing ease. Additionally, although more than one dummy pattern DB is provided on the inclined surface 4B in this modified example, in this invention, more than one pattern that can be used as actual wiring can be provided on the inclined surface 4B. Furthermore, this more than one pattern that can be used as actual wiring is a third wiring that is insulated from both the lower wiring group 5 and the upper wiring group 6. In other words, the "pattern" of the present invention includes both pseudo-patterns that are not used as actual wiring and patterns that can be used as actual wiring.

[0140] (Fourth variation)

[0141] Furthermore, in this invention, pseudo-patterns can also be formed on both sides of the two opposing inclined planes. For example... Figure 15 and Figure 16 As shown in the fourth modified example of the magnetic field detection device 100D, one or more pseudo-patterns DB can be provided on the inclined plane 4B, and one or more pseudo-patterns DA can also be provided on the inclined plane 4A. Figure 15 This is a schematic front view showing a part of the magnetic field detection device 100D, which is a fourth variation of the present invention. Additionally, Figure 16 It is along Figure 15 The cross-sectional view is shown in the direction of the arrow along the XVI-XVI line. In this case, in the height direction (Z-axis direction) orthogonal to the flat plane 1S, for example, the upper position DAH of the pseudo-pattern DA based on the flat plane 1S can be substantially equal to the upper position DBH of the pseudo-pattern DB based on the flat plane 1S.

[0142] Similar to the magnetic field detection device 100D, by setting pseudo-patterns DA and DB on the opposing inclined surfaces 4A and 4B respectively, the distribution density of the resist pattern formed in a manner covering the flat surface 1S and the protrusions 4 can be homogenized when forming the lower layer wiring group 5. In other words, the density difference between areas where the resist pattern covering the flat surface 1S and the protrusions 4 is formed at high density and areas where it is formed at low density can be reduced. As a result, the size and shape of the resist pattern during exposure and development can be controlled with greater precision. Therefore, the dimensional deviation of the lower layer wiring group 5 formed using this resist pattern can be reduced. Furthermore, when forming the lower layer wiring 53 in a manner that crosses the flat surface 1S sandwiched between two adjacent protrusions 4, the effect of exposure halo from the inclined surfaces 4A or 4B can be reduced. If there is exposure halo from such slopes 4A or 4B, the shape of the resist pattern used to pattern the lower layer wiring 53 may be deformed, and in this case, the dimensional accuracy of the lower layer wiring 53 may decrease. Therefore, like the magnetic field detection device 100D, by providing pseudo-patterns DA and DB on the mutually opposing slopes 4A and 4B respectively, it is possible to reduce the halo during exposure, thereby preventing a decrease in the dimensional accuracy of the lower layer wiring 53. In addition, although in this modified example, one or more pseudo-patterns DA are provided on slope 4A and one or more pseudo-patterns DB are provided on slope 4B, in the present invention, one or more patterns that can be used as actual wiring may be provided on slopes 4A and 4B respectively. Furthermore, the one or more patterns that can be used as actual wiring are third wirings that are insulated from both the lower layer wiring group 5 and the upper layer wiring group 6. That is to say, the "pattern" of the present invention includes both pseudo-patterns that are not used as actual wirings and patterns that can be used as actual wirings.

[0143] In addition, although Figure 3 In the planar schematic diagram shown, the planar shape of each protrusion 4 is a rectangle with the V-axis as its longitudinal direction; however, the planar shape of the protrusion 4 in this embodiment is not limited to this. The protrusion 4 may also have, for example, a runway-shaped outline where each of its two ends in the longitudinal direction is a semi-circle. Furthermore, in Figure 4 Although the example shows that inclined planes 4A and 4B are both planar, they could also be both curved surfaces. Furthermore, in... Figure 4 In the example shown, although the top 4T is the vertex of the intersection angle between the inclined planes 4A and 4B, the top 4T can also have a circular cross section.

[0144] Furthermore, the present invention can also adopt the following structure. (1)

[0146] A magnetic field detection device, comprising:

[0147] Substrate, including a flat surface;

[0148] The first protrusion and the second protrusion each include a first inclined surface and a second inclined surface, and are respectively disposed on the flat surface. The first inclined surface is inclined to the flat surface, and the second inclined surface is inclined to both the flat surface and the first inclined surface.

[0149] A first magnetoresistive film is disposed on the first inclined surface;

[0150] A second magnetoresistive film is disposed on the second inclined surface;

[0151] The first wiring connects the first magnetoresistive effect film disposed on the first inclined surface of the first protrusion and the first magnetoresistive effect film disposed on the first inclined surface of the second protrusion.

[0152] The second wiring connects the second magnetoresistive effect film disposed on the second inclined surface of the first protrusion and the second magnetoresistive effect film disposed on the second inclined surface of the second protrusion; and

[0153] More than one pattern

[0154] The first protrusion and the second protrusion are arranged adjacent to each other in the first direction such that the first inclined surface of the first protrusion and the second inclined surface of the second protrusion face each other in the first direction.

[0155] The one or more patterns are disposed on at least one of the first inclined surface of the first protrusion and the second inclined surface of the second protrusion, which are opposite to each other. (2)

[0157] The magnetic field detection device described in (1), wherein,

[0158] The one or more patterns have a first pattern and a second pattern.

[0159] The first pattern is disposed on the first inclined surface of the first protrusion, and the second pattern is disposed on the second inclined surface of the second protrusion. (3)

[0161] The magnetic field detection device described in (2), wherein,

[0162] In the height direction orthogonal to the flat plane, the upper position of the first pattern, which is based on the flat plane, is substantially the same as the upper position of the second pattern, which is based on the flat plane. (4)

[0164] The magnetic field detection device described in (1), wherein,

[0165] The one or more patterns are disposed on the second inclined surface of the second protrusion.

[0166] The first wiring is provided on the first inclined surface of the first protrusion, which faces the second inclined surface of the second protrusion having one or more patterns. (5)

[0168] The magnetic field detection device described in (4), wherein,

[0169] In the height direction orthogonal to the flat plane, the upper position of the one or more patterns based on the flat plane is substantially the same as the upper position of the first wiring based on the flat plane. (6)

[0171] The magnetic field detection device described in (1), wherein,

[0172] The one or more patterns are disposed on the first inclined surface of the first protrusion.

[0173] On the second inclined surface of the second protrusion facing the first inclined surface of the first protrusion having one or more patterns, a first wiring, a second wiring, and a second magnetoresistive effect film are provided, and the second magnetoresistive effect film is sandwiched between the first wiring and the second wiring in a height direction orthogonal to the flat surface. (7)

[0175] The magnetic field detection device according to any one of (1) to (6), wherein,

[0176] The one or more patterns are made of conductive material and are insulated from both the first wiring and the second wiring. (8)

[0178] The magnetic field detection device described in (7), wherein,

[0179] The constituent materials of the one or more patterns are the same as the constituent materials of the first wiring and the second wiring. (9)

[0181] The magnetic field detection device according to any one of (1) to (8), wherein,

[0182] The first wiring includes a first flat portion and a first inclined portion. The first flat portion is disposed on the flat surface and extends in a first direction, and the first inclined portion is disposed on the first inclined surface or the second inclined surface and extends in a second direction.

[0183] The first flat portion is connected to the middle portion of the first inclined portion in the second direction. (10)

[0185] The magnetic field detection device described in (9), wherein,

[0186] The first direction and the second direction are substantially orthogonal.

[0187] This disclosure contains the subject matter disclosed in Japanese priority patent application JP2022-032603 filed with the Japan Patent Office on March 3, 2022, the entire contents of which are incorporated herein by reference.

[0188] Those skilled in the art should understand that while various modifications, combinations, sub-combinations, and alternatives may arise depending on design requirements and other factors, they are all included within the scope of the appended claims or their equivalents.

Claims

1. A magnetic field detection device, comprising: Substrate, including a flat surface; Multiple protrusions, each including a first inclined surface and a second inclined surface, are disposed on the flat surface. The first inclined surface is inclined to the flat surface, and the second inclined surface is inclined to both the flat surface and the first inclined surface. A first magnetoresistive film is disposed on the first inclined surface; A second magnetoresistive film is disposed on the second inclined surface; The first wiring connects the first magnetoresistive effect film on the first inclined surface of each of two different protrusions in the plurality of protrusions to each other. The second wiring connects the second magnetoresistive effect films disposed on the second inclined surfaces of two different protrusions among the plurality of protrusions to each other; and More than one pattern The plurality of protrusions are arranged adjacent to each other in the first direction such that the first inclined surface and the second inclined surface face each other in the first direction. The one or more patterns are disposed at a position separate from the flat surface on at least one of the mutually opposing first and second inclined surfaces, and are respectively insulated from the first magnetoresistive film, the second magnetoresistive film, the first wiring and the second wiring. The constituent materials of the one or more patterns are the same as those of the first wiring and the second wiring.

2. The magnetic field detection device according to claim 1, wherein, The one or more patterns have a first pattern and a second pattern. The first pattern is disposed on the first inclined surface, and the second pattern is disposed on the second inclined surface.

3. The magnetic field detection device according to claim 2, wherein, In the height direction orthogonal to the flat plane, the upper position of the first pattern, which is based on the flat plane, is substantially the same as the upper position of the second pattern, which is based on the flat plane.

4. The magnetic field detection device according to claim 1, wherein, The plurality of protrusions have a first protrusion and a second protrusion. The one or more patterns are disposed on the second inclined surface of the second protrusion. The first wiring is provided on the first inclined surface of the first protrusion, which faces the second inclined surface of the second protrusion having one or more patterns.

5. The magnetic field detection device according to claim 4, wherein, In the height direction orthogonal to the flat plane, the upper position of the one or more patterns based on the flat plane is substantially the same as the upper position of the first wiring based on the flat plane.

6. The magnetic field detection device according to claim 1, wherein, The plurality of protrusions have a first protrusion and a second protrusion. The one or more patterns are disposed on the second inclined surface of the second protrusion. On the first inclined surface of the first protrusion, which faces the second inclined surface of the second protrusion having one or more patterns, the first wiring, the third wiring, and the first magnetoresistive film are provided. The third wiring is a wiring that connects the two first magnetoresistive effect films disposed on the first inclined surface of the first protrusion to each other. The first magnetoresistive film is disposed between the first wiring and the third wiring in a height direction orthogonal to the flat surface.

7. The magnetic field detection device according to any one of claims 1 to 6, wherein, The one or more patterns are made of conductive material.

8. The magnetic field detection device according to any one of claims 1 to 7, wherein, The first wiring includes a first flat portion and a first inclined portion. The first flat portion is disposed on the flat surface, and the first inclined portion is disposed on the first inclined surface and extends in a second direction intersecting the first direction. The first flat portion is connected to the middle portion of the first inclined portion, excluding the two ends in the second direction.

9. The magnetic field detection device according to claim 8, wherein, The first direction and the second direction are substantially orthogonal.

10. A magnetic field detection device, comprising: Substrate, including a flat surface; The first to third protrusions each include a first inclined surface and a second inclined surface, and each is disposed on the flat surface. The first inclined surface is inclined to the flat surface, and the second inclined surface is inclined to both the flat surface and the first inclined surface. A first magnetoresistive effect film is disposed on each of the first inclined surfaces of the first convex portion and the second convex portion; A second magnetoresistive film is disposed on each of the second inclined surfaces of the first protrusion and the third protrusion; The first wiring connects the first magnetoresistive effect film disposed on the first inclined surface of the first protrusion and the first magnetoresistive effect film disposed on the first inclined surface of the second protrusion. The second wiring connects the second magnetoresistive effect film disposed on the second inclined surface of the first protrusion and the second magnetoresistive effect film disposed on the second inclined surface of the third protrusion. as well as More than one pattern The first protrusion and the second protrusion are arranged adjacent to each other in the first direction such that the first inclined surface of the first protrusion and the second inclined surface of the second protrusion face each other in the first direction. The first protrusion and the third protrusion are arranged adjacent to each other in the first direction such that the second inclined surface of the first protrusion and the first inclined surface of the third protrusion face each other in the first direction. The one or more patterns are disposed on at least one of the first inclined surface of the first protrusion and the second inclined surface of the second protrusion, which are separated from the flat surface, and are respectively insulated from the first magnetoresistive film, the second magnetoresistive film, the first wiring and the second wiring. The constituent materials of the one or more patterns are the same as those of the first wiring and the second wiring.

11. A magnetic field detection device, comprising: Substrate, including a flat surface; The first to third protrusions each include a first inclined surface and a second inclined surface, and each is disposed on the flat surface. The first inclined surface is inclined to the flat surface, and the second inclined surface is inclined to both the flat surface and the first inclined surface. A first magnetoresistive effect film is disposed on each of the first inclined surfaces of the first convex portion and the second convex portion; A second magnetoresistive film is disposed on each of the second inclined surfaces of the first protrusion and the third protrusion; The first wiring connects the first magnetoresistive effect film disposed on the first inclined surface of the first protrusion and the first magnetoresistive effect film disposed on the first inclined surface of the second protrusion. The second wiring connects the second magnetoresistive effect film disposed on the second inclined surface of the first protrusion and the second magnetoresistive effect film disposed on the second inclined surface of the third protrusion. as well as More than one pattern The first protrusion and the second protrusion are arranged adjacent to each other in the first direction such that the second inclined surface of the first protrusion and the first inclined surface of the second protrusion face each other in the first direction. The first protrusion and the third protrusion are arranged adjacent to each other in the first direction such that the first inclined surface of the first protrusion and the second inclined surface of the third protrusion face each other in the first direction. The one or more patterns are disposed on at least one of the second inclined surfaces of the first protrusions and the first inclined surfaces of the second protrusions, respectively, at a position separated from the flat surface, and are respectively insulated from the first magnetoresistive film, the second magnetoresistive film, the first wiring and the second wiring. The constituent materials of the one or more patterns are the same as those of the first wiring and the second wiring.

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