电光相位调制器
By employing a separate dielectric material structure for the first and third stripes and an extended region electrical coupling design in the electro-optic phase modulator, the modulation efficiency of free carrier density is improved, solving the problem of low photoelectric conversion efficiency in the prior art and achieving a phase shift effect at a lower voltage.
CN115903281BActive Publication Date: 2026-07-17STMICROELECTRONICS (CROLLES 2) SAS
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- STMICROELECTRONICS (CROLLES 2) SAS
- Filing Date
- 2019-01-14
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing electro-optic phase modulators have low photoelectric conversion efficiency, resulting in high power consumption.
Method used
The first and third stripes are made of doped semiconductor material of the first conductivity type, separated by a dielectric material structure and electrically coupled to the control voltage node by lateral extension of the extended region. Combined with the thin design of the middle strip, the modulation efficiency of free carrier density is improved.
Benefits of technology
This technology enables a given phase shift to be achieved at a lower control voltage, improving electro-optical conversion efficiency and reducing power consumption.
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Figure CN115903281B_ABST
Abstract
本公开的实施例涉及电光相位调制器。一种电光相位调制器包括由条带的堆叠制成的波导。堆叠包括由第一导电类型的掺杂半导体材料制成的第一条带、由导电材料或第二导电类型的掺杂半导体材料制成的第二条带、以及由第一导电类型的掺杂半导体材料制成的第三条带。第二条带通过由介电材料制成的第一接口层被与第一条带分开，并且第三条带通过由介电材料制成的第二接口层被与第二条带分开。
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