Temperature control method for a substrate processing device and heating element

Abstract

This invention relates to an apparatus for processing a substrate and a method for temperature control of a heating element. The invention provides a substrate processing apparatus. The substrate processing apparatus includes: a chamber having a processing space; and a support unit configured to support and heat a substrate within the processing space; wherein the support unit includes: at least one heating element for regulating the temperature of the substrate; a power source for generating power applied to the at least one heating element; a power supply line for transmitting the power generated by the power source to the at least one heating element; a power return line for grounding the at least one heating element; and a current measuring resistor disposed on the power supply line or the power return line and used to estimate the temperature of the at least one heating element.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0113966, filed with the Korean Intellectual Property Office on August 27, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments of the inventive concept described herein relate to a substrate processing apparatus and a temperature control method. Background Technology

[0004] To manufacture semiconductor devices, various processing techniques are performed on substrates such as wafers, including photolithography, etching, ion implantation, cleaning, and polishing. Plasma can be used to etch films formed on substrates or to implant ions into films on substrates. Substrate processing apparatuses for using plasma to process substrates require precise substrate processing, repeatability of processing levels between substrates even when processing multiple substrates, and uniformity of processing levels across the entire area of ​​a single substrate. To improve such precision, repeatability, and uniformity, electrostatic chucks capable of supporting and heating substrates have been used.

[0005] An electrostatic chuck may include multiple heaters, each of which can be arranged to heat a different area of ​​the substrate. Furthermore, the heaters are independently controlled, allowing the substrate temperature to be adjusted differently for each area. In recent years, the number of heaters in an electrostatic chuck has been increasing to achieve more precise substrate temperature control.

[0006] Meanwhile, to accurately control the substrate temperature, it is necessary to sense the temperature of each heater and control the heater temperature based on the sensed temperature feedback. However, as described above, as the number of heaters installed in the electrostatic chuck increases, the number of temperature sensors installed at the substrate processing device to sense the heater temperature also increases. With the increase in the number of temperature sensors, not only does the wiring structure of the chuck become more complex, but it also becomes difficult to install the temperature sensors in the chuck. Summary of the Invention

[0007] The embodiments of the present invention provide a substrate processing apparatus and a temperature control method for a heating element for effectively processing substrates.

[0008] The present invention provides a substrate processing apparatus and a method for controlling the temperature of a heating element in the absence of a temperature sensor.

[0009] The present invention provides a substrate processing apparatus and a temperature control method for feedback control of the temperature of a heating element based on an estimated temperature of the heating element estimated in the absence of a temperature sensor.

[0010] The technical objectives of this invention are not limited to those described above, and other unmentioned technical objectives will become apparent to those skilled in the art from the following description.

[0011] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes a chamber having a processing space; and a support unit configured to support and heat a substrate within the processing space, wherein the support unit includes: at least one heating element for regulating the temperature of the substrate; a power source for generating power applied to the at least one heating element; a power supply line for transmitting the power generated by the power source to the at least one heating element; a power return line for grounding the at least one heating element; and a current measuring resistor disposed on the power supply line or the power return line for estimating the temperature of the at least one heating element.

[0012] In one embodiment, the resistance of the current measuring resistor is smaller than the resistance of the at least one heating element.

[0013] In one embodiment, the support unit further includes at least one switch on the power supply line and / or the power supply line, and if the at least one switch is turned on, the current measuring resistor is connected in series with the at least one heating element.

[0014] In one embodiment, the substrate processing apparatus further includes a control unit configured to control the support unit, wherein the control unit includes: a resistance measuring unit configured to measure the current flowing through the current measuring resistor and to measure the resistance of the at least one heating element based on the measured current; and a temperature estimation unit configured to estimate the temperature of the at least one heating element based on the resistance of the at least one heating element measured by the resistance measuring unit.

[0015] In one embodiment, the resistance measuring unit determines that the resistance of the at least one heating element decreases as the current flowing through the current measuring resistor increases.

[0016] In one embodiment, the temperature estimation unit estimates the temperature of the heating element based on reference data representing a one-to-one correspondence between the resistance of the at least one heating element and the temperature, and on the resistance of the at least one heating element as measured by the resistance measurement unit.

[0017] In one embodiment, the control unit includes a control section configured to control the power supply and / or the switch based on the temperature of the at least one heating element estimated by the temperature estimation unit.

[0018] In one embodiment, if the temperature of the at least one heating element estimated by the temperature estimation unit is lower than a preset temperature, the control unit generates a control signal to increase the output of the power supply.

[0019] In one embodiment, if the temperature of the at least one heating element estimated by the temperature estimation unit is lower than a preset temperature, the control unit generates a control signal to increase the time period during which the switch is turned on.

[0020] In one embodiment, the at least one heating element, the power supply line, and the power return line are respectively configured as a plurality, and each heating element is connected to any one of the plurality of power supply lines and any one of the plurality of power return lines, but does not share the same power supply line among the plurality of power supply lines and the same power return line among the plurality of power return lines.

[0021] In one embodiment, a rectifier is installed on the power supply line and / or the power return line to prevent reverse current from flowing toward the power source.

[0022] In one embodiment, when viewed from above, a plurality of the heating elements are arranged in an M×N matrix array.

[0023] In one embodiment, a plurality of the heating elements are arranged at the center of the support unit and heat corresponding portions of the substrate along the radial and circumferential directions of the support unit.

[0024] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes a chamber having a processing space; a support unit configured to support and heat a substrate within the processing space; and a plasma source generating plasma for processing the substrate. The support unit includes: at least one heating element for regulating the temperature of the substrate; a power source for generating power applied to the at least one heating element; a power supply line for transmitting the power to the at least one heating element; a power return line grounding the at least one heating element; and a current measuring resistor disposed on the power supply line or the power return line for estimating the temperature of the at least one heating element.

[0025] In one embodiment, the ratio of the resistance of the current measuring resistor to the resistance of the at least one heating element is approximately 1:1000 to 1:15000.

[0026] In one embodiment, the support unit includes a first plate and a second plate disposed below the first plate, wherein the first plate includes: an insulating layer in which the at least one heating element is embedded; and a dielectric layer in which an electrostatic electrode for electrostatically holding the substrate is embedded, and wherein the second plate has a fluid channel through which cooling fluid flows.

[0027] In one embodiment, the current-measuring resistor is positioned on the outside of the insulating layer.

[0028] In one embodiment, the substrate processing apparatus further includes a control unit configured to control the support unit, wherein the control unit includes: a resistance measuring unit configured to measure the current flowing through the current measuring resistor and to measure the resistance of the at least one heating element based on the measured current; and a temperature estimation unit configured to estimate the temperature of the at least one heating element based on the resistance of the heating element measured by the resistance measuring unit.

[0029] In one embodiment, the control unit includes a control section configured to feed back and control the temperature of the at least one heating element based on an estimated temperature of the at least one heating element estimated by the temperature estimation unit.

[0030] The present invention provides a method for controlling the temperature of a heating element in a support unit, the support unit including the heating element for regulating the temperature of a substrate; a power source for generating power applied to the heating element; a power supply line for transmitting the power to the heating element; a power return line for grounding the heating element; and a current measuring resistor disposed on the power supply line or the power return line and used to estimate the temperature of the heating element. The method includes: measuring the current flowing through the current measuring resistor and measuring the resistance of the heating element based on the measured current; estimating the temperature of the heating element based on the measured resistance of the heating element; and feedback-controlling the temperature of the heating element based on the estimated temperature of the heating element.

[0031] According to the embodiments conceived in this invention, the substrate can be processed effectively.

[0032] According to an embodiment of the present invention, the temperature of the heating element can be estimated without a temperature sensor.

[0033] According to an embodiment of the present invention, the temperature of the heating element can be controlled based on the estimated temperature of the heating element without the need for a temperature sensor.

[0034] The effects of this invention are not limited to those described above, and other effects not mentioned will become apparent to those skilled in the art from the following description. Attached Figure Description

[0035] Referring to the following figures, the above and other objects and features will become apparent from the following description, wherein, unless otherwise stated, the same reference numerals refer to the same parts throughout the figures:

[0036] Figure 1 A substrate processing apparatus according to an embodiment of the present invention is illustrated schematically.

[0037] Figure 2 To demonstrate Figure 1 A cross-sectional view of a portion of the support unit.

[0038] Figure 3 Showing Figure 2 An array structure of heating elements.

[0039] Figure 4 A temperature control structure for a heating element according to an embodiment of the present invention is shown.

[0040] Figure 5 It shows the estimation Figure 4The temperature control structure of the heating element when the temperature of any heating element is reached.

[0041] Figure 6 A flowchart illustrating a temperature control method for a heating element according to an embodiment of the present invention is provided.

[0042] Figure 7 and Figure 8 To demonstrate based on Figure 5 A graphical example of a feedback control step that estimates the temperature of the heating element to control the temperature of the heating element.

[0043] Figure 9 An array structure of heating elements according to another embodiment of the invention is shown. Detailed Implementation

[0044] The inventive concept can be modified in various ways and can take many forms, and specific embodiments thereof will be shown and described in detail in the accompanying drawings. However, embodiments of the inventive concept are not intended to limit the specific forms disclosed, and it should be understood that the inventive concept includes all variations, equivalents, and substitutions contained within the spirit and technical scope of the inventive concept. In the description of the inventive concept, detailed descriptions of related known technologies may be omitted where such descriptions may obscure the essence of the inventive concept.

[0045] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the inventive concept. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including” as used in this specification designate the presence of stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Furthermore, the term “exemplary” is intended to refer to an example or illustration.

[0046] It should be understood that although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, components, regions, layers, and / or segments, these elements, components, regions, layers, and / or segments should not be limited by these terms unless otherwise stated. These terms are used only to distinguish one element, component, region, layer, and / or segment from another. Therefore, the first element, first component, first region, first layer, or first segment discussed below may be referred to as a second element, second component, second region, second layer, or second segment without departing from the teachings of the inventive concept.

[0047] In an embodiment of the inventive concept, a substrate processing apparatus for etching a substrate using plasma is shown. However, the inventive concept is not limited thereto and can be applied to a wide variety of apparatuses for performing processes that supply plasma into a chamber.

[0048] In the following text, reference will be made to Figures 1 to 9 The embodiments of the present invention are described in detail.

[0049] Figure 1 A substrate processing apparatus according to an embodiment of the present invention is illustrated schematically.

[0050] refer to Figure 1 The substrate processing apparatus 10 uses plasma to process the substrate W. The substrate processing apparatus 10 may include a chamber 100, a support unit 200, a nozzle unit 300, a gas supply unit 400, a plasma source, a liner unit 500, a baffle unit 600, and a control unit 800.

[0051] Chamber 100 is provided with a processing space in which substrate processing processes are performed. Chamber 100 has an internal processing space. Chamber 100 is provided in a sealed form. Chamber 100 is made of a metallic material. In one embodiment, chamber 100 may be made of aluminum. Chamber 100 may be grounded. A vent 102 is formed on the bottom of chamber 100. Vent 102 is connected to a vent line 151. Vent line 151 is connected to a pump (not shown). Reaction byproducts generated during the process and gases retained in the internal space of chamber 100 can be vented to the outside through vent line 151. The interior of chamber 100 is depressurized to a preset pressure through the venting process.

[0052] A heater (not shown) is disposed in a wall, for example, in the side wall of chamber 100. The heater heats the side wall of chamber 100. The heater is electrically connected to a heating power source (not shown). The heater can be configured to undergo Joule heating (also known as ohmic / resistance heating) when an electric current is applied to it through the heating power source. For example, the heater can be configured to generate heat when an electric current passes through it. The heat generated by the heater is transferred to the internal space. The processing space is maintained at a preset temperature by the heat provided by the heater. The heater is configured as a coil-shaped heating wire. One or more heaters can be disposed on / inside the side wall of chamber 100.

[0053] The support unit 200 can support the substrate W in the processing space of the chamber 100. The support unit 200 can be an electrostatic chuck (ESC) that electrostatically adsorbs the substrate W (such as a wafer). Alternatively, the support unit 200 can hold the substrate W in various ways (such as mechanical clamping or clamping by vacuum adsorption).

[0054] Furthermore, the support unit 200 can control the temperature of the supported substrate W. For example, the support unit 200 can increase the processing efficiency of the substrate W by increasing the temperature of the substrate W.

[0055] The support unit 200 may include a support plate 210 (exemplary first plate), an electrode plate 220 (exemplary second plate), a heating element 230, a bottom support member 240, an insulating plate 250, an annular member 270, a power line module 280, and a power supply 290.

[0056] The substrate W can be placed on the support plate 210. When viewed from above, the support plate 210 can have a disc-like shape.

[0057] In some embodiments, the top surface of the support plate 210 may have the same radius as the substrate W. In some embodiments, the radius of the top surface of the support plate 210 may be larger than the radius of the substrate W. When the substrate W is placed on the support plate 210, the edge region of the substrate W may not protrude beyond the outside of the support plate 210. Furthermore, the edge region of the support plate 210 may be stepped. An insulator 214 may be disposed at the edge region of the stepped support plate 210. When viewed from above, the insulator 214 may have a ring-like form.

[0058] Figure 2 To demonstrate Figure 1 An enlarged view of a portion of the support unit.

[0059] refer to Figure 2 The support plate 210 may include a dielectric layer 210a, a first insulating layer 210b, a second insulating layer 210c, and a heat insulation layer 210d.

[0060] An electrostatic electrode 211 can be disposed within the dielectric layer 210a. For example, the electrostatic electrode 211 can be embedded within the dielectric layer 210a. The electrostatic electrode 211 can be configured as unipolar or bipolar. The electrostatic electrode 211 can be electrically connected to an electrostatic power supply 213. The electrostatic power supply 213 includes a direct-current (DC) power supply. A clamping switch 212 can be installed between the electrostatic electrode 211 and the electrostatic power supply 213. The electrostatic electrode 211 can be electrically connected to the electrostatic power supply 213 by turning the clamping switch 212 on / off. When the clamping switch 212 is turned on, a DC current can be applied to the electrostatic electrode 211. The current applied to the electrostatic electrode 211 can generate an electrostatic force between the electrostatic electrode 211 and the substrate W. The substrate W can be clamped to the support plate 210 by the electrostatic force. The dielectric layer 210a can be formed of a material containing a dielectric. For example, dielectric layer 210a may be made of or include a ceramic-containing material.

[0061] The first insulating layer 210b and the second insulating layer 210c can be bonded together to form a cavity. Multiple cavities formed by the first insulating layer 210b and the second insulating layer 210c can exist. The first insulating layer 210b can be disposed below the dielectric layer 210a. The second insulating layer 210c can be disposed below the first insulating layer 210b. An upwardly recessed portion (i.e., recessed towards the dielectric layer 210a) is formed in the first insulating layer 210b, and the second insulating layer 210c is disposed below the first insulating layer 210b to form a cavity between them. The heating element 230 can be disposed in each cavity formed by the first insulating layer 210b and the second insulating layer 210c. Although Figure 2 The diagram shows a recess formed at the first insulating layer 210b, but the second insulating layer 210c may have a recess and / or both the first insulating layer 210b and the second insulating layer 210c may have recesses. The first insulating layer 210b and the second insulating layer 210c may be polymeric materials, inorganic materials, ceramics, such as silicon oxide, alumina, yttrium, aluminum nitride, other suitable materials, and / or combinations thereof.

[0062] The heat insulation layer 210d can be disposed below the second insulation layer 210c. The heat insulation layer 210d can serve as a thermal barrier. For example, it can minimize the transfer of heat generated by the heating element 230 to the bottom portion of the support unit 200. Furthermore, it can minimize the transfer of cold air from the cooling fluid flowing in the top fluid channel 221, which serves as a cooling fluid channel, to the insulation layers 210b and 210c on which the heating element 230 is disposed.

[0063] Heating element 230 can control the temperature of substrate W. Heating element 230 can heat substrate W. Heating element 230 can generate heat by receiving power generated by power source 290 (described later) through power line module 280. Heating element 230 can be disposed in a cavity formed by first insulating layer 210b and second insulating layer 210c. Multiple heating elements 230 can be disposed. For example, heating element 230 can each heat different areas of substrate W. For example, a first portion of heating element 230 can heat a first area of ​​substrate W. Furthermore, a second portion of heating element 230 can heat a second area of ​​substrate W.

[0064] The heating elements 230 can be arranged in a matrix array to control the temperature of each region of the substrate W, such as... Figure 3 As shown in [the document]. Although Figure 3 Four heating elements 230 arranged in a 2×2 array are shown, but the inventive concept is not limited thereto. For example, the heating elements 230 can be arranged in an M×N array (where M, N≥2). The total number of heating elements 230 can be varied as needed.

[0065] Furthermore, the heating element 230 can have a plate shape. For example, the heating element 230 can be referred to as a heating plate. Each heating element 230 can have various shapes, such as... Figure 3 The shapes shown include rectangular and pentagonal shapes. Furthermore, the heating element 230 can be a resistance heater, such as a polyimide heater, silicone rubber heater, mica heater, metal heater, ceramic heater, semiconductor heater, or carbon heater.

[0066] Furthermore, the area of ​​the heating element 230 can be larger than or correspond to the area of ​​the die fabricated on the substrate W. For example, the dimensions of each heating element 230 can be configured such that its top surface completely covers the top surface of the corresponding die to be fabricated on the substrate W. For example, the top surface area of ​​each heating element 230 can be 2 cm². 2 up to 3cm 2 Furthermore, the thickness of each heating element 230 can range from 2 micrometers to 1 millimeter, and more specifically, from 5 micrometers to 80 micrometers. Additionally, when viewed from above, the total area occupied by the heating elements 230 can be 50% to 90% of the area of ​​the top surface of the support unit 200 (e.g., the top surface of the support plate 210). For example, when viewed from above, the total area occupied by the heating elements 230 can be 90% of the top surface of the support plate 210.

[0067] The temperature control structure and temperature control method of the heating element 230 can be further demonstrated.

[0068] Return to reference Figure 1 Electrode plate 220 can be disposed below support plate 210. The top surface of electrode plate 220 can contact the bottom surface of support plate 210. Electrode plate 220 can have a disk shape. Electrode plate 220 is made of a conductive material. In one embodiment, electrode plate 220 can be made of aluminum. A top fluid channel 221 can be formed within electrode plate 220, which is a channel through which cooling fluid flows. Top fluid channel 221 primarily cools support plate 210. Cooling fluid can be supplied to top fluid channel 221. In one embodiment, the cooling fluid can be cooling water or cooling gas. Alternatively, electrode plate 220 can be an embodiment of a cooling plate.

[0069] Electrode plate 220 can be a metal plate. Electrode plate 220 can be electrically connected to bottom power supply 227. Bottom power supply 227 can be configured as a high-frequency power supply for generating high-frequency power. The high-frequency power supply can be configured as an RF power supply. The RF power supply can be configured as a high-bias power RF power supply. Electrode plate 220 can selectively receive high-frequency power from bottom power supply 227 by switching bottom switch 225. Optionally, electrode plate 220 can be grounded.

[0070] An insulating plate 250 may be disposed below the electrode plate 220. The insulating plate 250 may be in the form of a circular plate. The insulating plate 250 may have an area corresponding to the area of ​​the electrode plate 220. The insulating plate 250 may be configured as an insulating plate. In one embodiment, the insulating plate 250 may be configured as a dielectric.

[0071] The bottom support member 240 is disposed below the electrode plate 220. The bottom support member 240 is disposed below the bottom plate 260. The bottom support member 240 is configured in a ring shape.

[0072] The bottom plate 260 is disposed below the insulating plate 250. The bottom plate 260 may be made of aluminum. When viewed from above, the bottom plate 260 may be circular. The bottom plate 260 may have an internal space. A lifting pin module (not shown) for moving the substrate W from the external transmission member to the support plate 210 may be positioned within the internal space of the bottom plate 260.

[0073] An annular member 270 is disposed at the edge region of the support unit 200. The annular member 270 has an annular shape. The annular member 270 is configured to surround the top portion of the support plate 210. The annular member 270 may be disposed on an insulator 214 disposed at the edge region of the support plate 210. The annular member 270 may be configured as a focusing ring.

[0074] The nozzle unit 300 is disposed above the support unit 200 inside the chamber 100. The nozzle unit 300 is positioned facing the support unit 200. The nozzle unit 300 includes a nozzle 310, a gas injection plate 320, a cover plate 330, a top plate 340, and an insulating ring 350.

[0075] The nozzle 310 is positioned downwardly spaced a predetermined distance from the top surface of the chamber 100. The nozzle 310 is disposed above the support unit 200. A predetermined space is formed between the nozzle 310 and the top surface of the chamber 100. The nozzle 310 can be disposed in the form of a plate with a constant thickness. The bottom surface of the nozzle 310 can be anodized to prevent arcing due to plasma. The cross-section of the nozzle 310 can be configured to have the same shape and cross-sectional area as the support unit 200. The nozzle 310 includes a plurality of injection holes 311. The injection holes 311 penetrate the top and bottom surfaces of the nozzle 310 in a vertical direction.

[0076] The nozzle 310 can be made of a material that reacts with plasma (generated by a gas supplied by the gas supply unit 400) to produce a compound. For example, the nozzle 310 can be configured to react with the ions containing the highest electronegativity among the ions in the plasma to produce a compound. For example, the nozzle 310 can be made of a silicon-containing material. Alternatively, the compound generated by the reaction between the nozzle 310 and the plasma can be silicon tetrafluoride.

[0077] The nozzle 310 can be electrically connected to a top power supply 370. The top power supply 370 can be configured as a high-frequency power supply. Alternatively, the nozzle 310 can be electrically grounded.

[0078] A gas injection plate 320 is positioned on the top surface of the nozzle 310. The gas injection plate 320 can be positioned at a predetermined distance from the top surface of the chamber 100. The gas injection plate 320 can be arranged in the form of a plate with a constant thickness. A heater 323 is disposed in the edge region of the gas injection plate 320. The heater 323 heats the gas injection plate 320.

[0079] The gas injection plate 320 is provided with a diffusion zone 322 and injection holes 321. The diffusion zone 322 uniformly distributes the gas supplied from above into the injection holes 321. The diffusion zone 322 is connected to the injection holes 321 located below. Adjacent diffusion zones 322 are connected to each other. Adjacent injection holes 321 are connected to the diffusion zones 322 and penetrate the bottom surface in the vertical direction.

[0080] The injection port 321 is positioned to face the injection port 311 of the nozzle 310. The gas injection plate 320 may contain a metallic material.

[0081] A cover plate 330 is positioned above a gas injection plate 320. The cover plate 330 can be in the form of a plate with a constant thickness. The cover plate 330 is provided with a diffusion zone 332 and injection holes 331. The diffusion zone 332 uniformly distributes the gas supplied from above into the injection holes 331. The diffusion zone 332 is connected to the injection holes 331 located below. Adjacent diffusion zones 332 are connected to each other. The injection holes 331 are connected to the diffusion zones 332 and penetrate the bottom surface in the vertical direction.

[0082] A top plate 340 is disposed above a cover plate 330. The top plate 340 may be a plate with a constant thickness. The top plate 340 may have the same dimensions as the cover plate 330. A supply hole 341 is formed in the center of the top plate 340. The supply hole 341 is a hole through which gas passes. Gas passing through the supply hole 341 is supplied to the diffusion zone 332 of the cover plate 330. A cooling fluid channel 343 is formed within the top plate 340. Cooling fluid may be supplied to the cooling fluid channel 343. In one embodiment, the cooling fluid may be cooling water.

[0083] Furthermore, the nozzle 310, gas injection plate 320, cover plate 330, and top plate 340 can be supported by rods. For example, the nozzle 310, gas injection plate 320, cover plate 330, and top plate 340 can be connected to each other and supported by rods fixed to the top surface of the top plate 340. In addition, the rods can be connected to the interior of the chamber 100.

[0084] An insulating ring 350 is configured to surround the periphery of the nozzle 310, gas injection plate 320, cover plate 330, and top plate 340. The insulating ring 350 may be in the form of a circular ring. The insulating ring 350 may be made of a non-metallic material. When viewed from above, the insulating ring 350 is positioned to overlap with the annular member 270. When viewed from above, the surfaces of the insulating ring 350 that contact the nozzle 310 are positioned to overlap with the top region of the annular member 270.

[0085] The gas supply unit 400 supplies gas into the chamber 100. The gas supplied by the gas supply unit 400 can be excited into a plasma state by a plasma source. Alternatively, the gas supplied by the gas supply unit 400 can also be a fluorine-containing gas. For example, the gas supplied by the gas supply unit 400 can be carbon tetrafluoride.

[0086] The gas supply unit 400 includes a gas supply nozzle 410, a gas supply line 420, and a gas storage unit 430. The gas supply nozzle 410 is mounted at the center of the top surface of the chamber 100. An injection port is formed on the bottom surface of the gas supply nozzle 410. The injection port supplies process gas into the chamber 100. The gas supply line 420 connects the gas supply nozzle 410 to the gas storage unit 430. The gas supply line 420 supplies process gas stored in the gas storage unit 430 to the gas supply nozzle 410. A valve 421 is installed on the gas supply line 420. The valve 421 opens and closes the gas supply line 420 and regulates the flow rate of the process gas supplied through the gas supply line 420.

[0087] A plasma source excites the process gas in chamber 100 into a plasma state. In an embodiment of the present invention, a capacitively coupled plasma (CCP) source is used as the plasma source. The CCP source may include a top electrode and a bottom electrode inside chamber 100. The top electrode and the bottom electrode may be arranged vertically parallel to each other in chamber 100. One of the two electrodes may be applied with high-frequency power, while the other electrode may be grounded. An electromagnetic field may be generated in the space between the two electrodes, and the process gas supplied to this space may be excited into a plasma state. The plasma is used to perform a substrate W processing process. According to one embodiment, the top electrode of the CCP source may be configured as a nozzle unit 300, and the bottom electrode of the CCP source may be configured as the aforementioned electrode plate. High-frequency power may be applied to the bottom electrode, and the top electrode may be grounded. Alternatively, high-frequency power may be applied to both the top electrode and the bottom electrode. Accordingly, an electromagnetic field is generated between the top electrode and the bottom electrode. The generated electromagnetic field excites the process gas disposed in chamber 100 into a plasma state.

[0088] Liner unit 500 prevents damage to the inner wall of chamber 100 and support unit 200 during the process. Liner unit 500 prevents impurities generated during the process from depositing on the inner wall and support unit 200. Liner unit 500 includes an inner liner 510 and an outer liner 530.

[0089] An outer liner 530 is disposed on the inner wall of the chamber 100. The outer liner 530 has open spaces on its top and bottom surfaces. The outer liner 530 may be cylindrical. The outer liner 530 may have a radius corresponding to the inner surface of the chamber 100. The outer liner 530 is disposed along the inner surface of the chamber 100.

[0090] The outer liner 530 may be made of aluminum. The outer liner 530 protects the inner surface of the body 110. During the ignition of the process gas, an electric arc discharge can occur in the chamber 100. The electric arc discharge can damage the chamber 100. The outer liner 530 protects the inner surface of the body 110 to prevent damage to the inner surface of the body 110 due to the electric arc discharge.

[0091] The liner 510 is configured to surround the support unit 200. The liner 510 is configured in a ring shape. The liner 510 is provided to surround all of the following: support plate 210, electrode plate 220, and bottom support member 240. The liner 510 may be made of aluminum. The liner 510 protects the outer surface of the support unit 200.

[0092] A baffle unit 600 is positioned between the inner wall of the chamber 100 and the support unit 200. The baffle is arranged in an annular shape. Multiple through holes are formed at the baffle. Gas contained in the chamber 100 passes through the through holes of the baffle and is discharged through the discharge hole 102. The flow of gas can be controlled according to the shape of the baffle and the shape of the through holes.

[0093] The control unit 800 can control the substrate processing apparatus 10. The control unit 800 can control the substrate processing apparatus 10 so that the substrate processing apparatus 10 performs a plasma processing process on the substrate W. Furthermore, the control unit 800 may include: a process controller including a microprocessor (computer) for controlling the substrate processing apparatus 10; a user interface (such as a keyboard) through which an operator inputs commands to manage the substrate processing apparatus 10; a display showing the operation status of the substrate processing apparatus 10; and a memory unit storing processing schemes, i.e., control programs for executing the processing process of the substrate processing apparatus by controlling the process controller, or programs for executing components of the substrate processing apparatus based on data and processing conditions. Furthermore, the user interface and the memory unit may be connected to the process controller. The processing schemes may be stored in a storage medium in the storage unit, and the storage medium may be a hard disk, a portable disk (such as a CD-ROM or DVD), or a semiconductor memory (such as flash memory).

[0094] The temperature control structure of the heating element 230 according to an embodiment of the present invention will be shown in detail below.

[0095] Figure 4 This is a view illustrating the temperature control structure of a heating element according to an embodiment of the present invention. (Reference) Figure 4 As described above, the heating element 230 can be disposed in the support plate 210. The heating element 230 can receive power from the power supply 290 to generate heat. The power supplied by the power supply 290 can be transmitted to the heating element 230 through the power line module 280.

[0096] As described above, multiple heating elements 230 can be provided, and the heating elements 230 can be arranged in a matrix array to regulate the temperature of each region in the substrate W. For example, the heating elements 230 can be arranged in an M×N array as described above. In the following text, the heating elements 230 provided on the M×N array (M, N) can be referred to as MN heating elements 230MN. For example, the heating elements 230 provided at M×N array 1 and 1 can be referred to as 1-1 heating elements 23011. The heating elements 230 provided at M×N array 1 and 2 can be referred to as 1-2 heating elements 23012. Figure 4 For ease of explanation, we will take the arrangement of heating elements 230 along a 2×2 array as an example.

[0097] The power line module 280 can transmit power generated by the power supply 290 to the heating element 230. The power line module 280 may include a power supply line 281 and a power return line 282.

[0098] The power supply line 281 can be a line used to supply power generated by the power source 290 to the heating element 230. The power supply line 281 can refer to a line disposed at the front end of the heating element 230 based on the current flow path. Furthermore, the power supply line 281 can be electrically connected to multiple heating elements 230, for example, on the input side of the heating elements. For example, the power supply line 281 can be electrically connected to heating elements 230 disposed in the same row.

[0099] Multiple power supply lines 281 can be provided. For example, there can be M power supply lines 281, which is the number of rows in the M×N array of heating elements. For example, a power supply line 281 electrically connected to a group of heating elements 230 arranged in the first row of the M×N array can be referred to as a first power supply line 2811. Furthermore, a power supply line electrically connected to a group of heating elements 230 arranged in the second row of the M×N array can be referred to as a second power supply line 2812.

[0100] The power return line 282 can ground the heating element 230. The power return line 282 can refer to a line located at the rear end of the heating element 230 relative to the current flow path. Furthermore, the power return line 282 can be electrically connected to multiple heating elements 230, for example, to the output side of the heating elements. For example, the power return line 282 can be electrically connected to heating elements 230 arranged in the same row.

[0101] Multiple power return lines 282 can be provided. For example, N power return lines 282 can be provided, which is the number of columns in the M×N array of heating elements. For example, a power return line 282 electrically connected to a group of heating elements 230 arranged in the first column of the M×N array can be referred to as a first power return line 2821. Furthermore, a power return line 282 electrically connected to a group of heating elements 230 arranged in the second column of the M×N array can be referred to as a second power return line 2822.

[0102] Furthermore, the two heating elements 230 are not connected to the same power supply line 281 and the same power return line 282. For example, for heating element 23011 (1-1), it can be electrically connected to the first power supply line 2811 and the first power return line 2821. For heating element 23012 (1-2), it can be electrically connected to the first power supply line 2811 and the second power return line 2822. Comparing heating elements 23011 (1-1) and 23012 (1-2), the first power supply line 2811 is shared, but the power return line 282 is not shared. This is to independently control the heating of each heating element 230 while preventing the connection between the power supply line 281 and the power return line 282 from becoming complicated. If the connection between the power supply line 281 and the power return line 282 becomes complicated, problems such as short circuits may occur frequently, and maintenance may be difficult. However, according to the embodiments conceived in this invention, each of these heating elements 230 is connected to any one of the power supply lines of the power supply line 281 and any one of the power supply lines of the power return line 282, and since the heating elements 230 do not share the same power supply line of the multiple power supply lines and the same power return line of the multiple power return lines, independent control of the heating elements 230 and simplified connection can be achieved.

[0103] Furthermore, rectifier D can be installed at power supply line 281. Rectifier D can be installed at power supply line 281 and can also be installed at the front end of heating element 230. Rectifier D can be configured to correspond to each heating element 230. For example, multiple rectifiers D can be configured to correspond to each of these heating elements 230. The rectifier D corresponding to heating element 23011 can be referred to as rectifier D. 11 The rectifier D corresponding to the 1-2 heating element 23012 can be referred to as the 1-2 rectifier D. 12 The rectifier D corresponding to the MN heating element 230MN can be called the MN rectifier DMN.

[0104] The power generated by power source 290 can be selectively transferred to heating element 230 by controlling switch S. For example, switch S may include a 1-1 switch S installed at the first power supply line 2811. 11 1-2 switch S installed at the second power supply line 2812 12 2-1 switch S installed at the first power return line 2821 21 and the 2-2 switch S installed at the second power return line 2822. 22 Power can be selectively applied to the heating element 230 according to the on / off control of switch S.

[0105] For example, in order to apply power to the heating element 23011 1-1, the switch S 1-1 can be turned on. 11 and 2-1 switch S 21 The remaining switch S can be turned off. Furthermore, to apply power to heating element 23011 (1-1) and heating element 23012 (1-2), switch S (1-1) can be turned on. 11 2-1 Switch S 21 and 2-2 switch S 22 The remaining switches S can be disconnected. The control unit 800, which will be described later, can independently control the heating element 230 by selectively forming closed loops through the combination of turning these switches S on and off.

[0106] Furthermore, the current-measuring resistor RS can be installed at the power supply line 281 or the power return line 282. For example, the current-measuring resistor RS can be installed at the power return line 282. For example, the current-measuring resistor RS may include a resistor installed at the 2-1 switch S. 21 The first current measuring resistor R at the rear end S1 and installed on switch S 2-2 22 The second current measuring resistor R at the rear end S2 Furthermore, the current measuring resistor RS can be disposed outside the dielectric layer 210a and the insulating layers 210b and 210c described above.

[0107] The current-measuring resistor RS can be a shunt resistor used to measure the current (more specifically, the magnitude of the current) flowing in a closed loop. When a closed loop is formed to apply power to some of the multiple heating elements 230, the current-measuring resistor RS can be connected in series with the heating elements 230. For example, when power is applied to heating element 23021 (e.g., 2-1 heating element 23021)... Figure 5 As shown), switches S1-2 can be turned on. 12 and 2-1 switch S 21 When switch S1-2 is turned on 12 and 2-1 switch S21 At that time, 2-1 heating element 23021 and first current measuring resistor R S1 They can be connected in series. In this case, the same current can flow through the heating element 23021 and the first current measuring resistor R. S1 .

[0108] Furthermore, the current-measuring resistor RS can have a very small resistance value. When the current-measuring resistor RS and the heating element 230 are included in the same closed loop (i.e., when the current-measuring resistor RS is connected in series with the heating element 230), the voltage is divided between the series-connected heating element 230 and the current-measuring resistor RS in a manner proportional to their resistance values. The larger the resistance value of the current-measuring resistor RS, the larger the voltage divided across it, which may make it difficult to properly control the temperature of the heating element 230.

[0109] Accordingly, the resistance of the current measuring resistor RS according to the embodiment of the present invention can be smaller than the resistance of the heating element 230. For example, the resistance of the current measuring resistor RS can be negligible compared to the resistance of the heating element 230. For example, the ratio of the resistance of the current measuring resistor RS to the resistance of the heating element 230 can be approximately 1:1000 to 1:15000. For example, if the resistance of the heating element 230 is 10 [Ω], the resistance of the current measuring resistor RS can be from 1 m [Ω] to 100 m [Ω].

[0110] The control unit 800 may include a resistance measurement unit 810, a temperature estimation unit 820, and a control unit 830. The resistance measurement unit 810 can measure the current flowing in the current-measuring resistor RS and can measure the resistance of the heating element 230 based on the measured current. The resistance measurement unit 810 can perform the resistance measurement step S10, which will be described later. The temperature estimation unit 820 can estimate the temperature of the heating element 230 based on the resistance of the heating element 230 measured by the resistance measurement unit 810. The temperature estimation unit 820 can perform the temperature estimation step S20, which will be described later. The control unit 830 can provide feedback control of the temperature of the heating element 230 based on the estimated temperature of the heating element 230 estimated by the temperature estimation unit 820. For example, the control unit 830 can generate a control signal for feedback control of at least one of the power supply 290 or the switch S.

[0111] The temperature control method of the heating element 230 according to an embodiment of the present invention will be described in detail below.

[0112] Figure 6 A flowchart illustrating a temperature control method for a heating element according to an embodiment of the present invention is provided. (Reference) Figure 6The temperature control method for the heating element 230 of the present invention may include a temperature coefficient calculation step S00, a resistance measurement step S10, a temperature estimation step S20, and a feedback control step S30.

[0113] The temperature coefficient calculation step S00 can be performed before processing the substrate W. The temperature coefficient calculation step S00 can be performed before processing the substrate W, and the temperature coefficient calculation step can be performed for each heating element 230. The temperature resistivity α of each heating element 230 can be pre-stored in the control unit 800.

[0114] The temperature coefficient calculation step S00 can calculate the temperature resistivity α, which will be used in the temperature estimation step S20, described later. The temperature resistivity α can be a coefficient indicating the rate of change of resistance value with respect to the temperature change of the heating element 230. The temperature resistivity α can be calculated based on information including changes in the resistance of the heating element 230 measured by changing its temperature.

[0115] Temperature changes in the heating element 230 can be caused by altering the temperature of the cooling fluid supplied to the cooling fluid channel 221 of the electrode plate 220. Alternatively, the resistance of the heating element 230 can be measured directly using a measuring instrument, or the resistance can be measured by measuring the voltage applied across the current-measuring resistor RS using Ohm's law. In this case, to maximize the effect of the cooling fluid, the voltage generated by the power supply 290 can be kept as small as possible.

[0116] The temperature resistivity α can be calculated using the following formula.

[0117]

[0118] [α: Temperature resistivity, R1: Design resistance of heating element 230, R2: Measurement resistance of heating element 230, T1: Design temperature, T2: Measurement temperature]

[0119] The design resistance R1 can refer to the design resistance of the heating element 230. The design resistance R1 can also refer to the resistance of the heating element 230 at a design temperature T1. For example, the heating element 230 can be designed to have 10Ω at 25°C. Information regarding the design resistance R1 and the design temperature T1 can be obtained. The measured resistance R2 can refer to the resistance measured when the temperature of the heating element 230 is the measured temperature T2.

[0120] In the resistance measurement step S10, the resistance R of the heating element 230 can be measured. The resistance of the heating element 230 can be calculated using Ohm's law. For example, as... Figure 5As shown, when the heating element 230 is connected in series with the current measuring resistor RS and forms a closed loop, the resistance R of the heating element 230, the resistance RS of the current measuring resistor RS, and the current I and voltage V flowing in the closed loop can have the following relationship.

[0121]

[0122] [R: Resistance of heating element 230, RS: Resistance of current measuring resistor RS, V: Power, I: Current]

[0123] The resistance measuring unit 810 can determine that as the magnitude of the current flowing through the current measuring resistor RS increases, the resistance of the heating element 230 decreases. Furthermore, since the resistance of the current measuring resistor RS is negligible compared to the resistance R of the heating element 230, the resistance R of the heating element 230 can be determined relatively accurately by the voltage-to-current ratio.

[0124] In temperature estimation step S20, the temperature of heating element 230 can be estimated. In temperature estimation step S20, the temperature of heating element 230 can be estimated using reference data pre-stored in control unit 800 and the magnitude of the resistance R of heating element 230 measured in resistance measurement step S10. For example, the estimated temperature T of heating element 230 estimated in temperature estimation step S20 and the measured resistance of heating element 230 measured in resistance measurement step S10 can have the following relationship.

[0125]

[0126] [T: Estimated temperature of heating element 230, T0: Initial temperature of heating element 230, R: Measured resistance of heating element 230, R0: Initial resistance of heating element 230, α: Temperature resistivity coefficient, c: Calibration constant]

[0127] The reference data pre-stored in the control unit 800 may include information about the resistance (initial resistance, R0) of the heating element 230 at a specific temperature (initial temperature, T0). The temperature estimation unit 820 can estimate the temperature of the heating element 230 based on the previously stored reference data about the heating element 230 and the measured resistance R of the heating element 230 measured by the resistance measurement unit 810.

[0128] The control unit 830 can control the temperature of the heating element 230 based on the estimated temperature of the heating element 230 estimated by the temperature estimation unit 820. For example, the control unit 830 can control the output of the power supply 290 based on the estimated temperature of the heating element 230 estimated by the temperature estimation unit 820. For example, when the estimated temperature of the heating element 230 is lower than a preset temperature, then... Figure 7 As shown, the control unit 830 can generate a control signal that increases the output of the power supply 290 from the first voltage V1 to the second voltage V2.

[0129] Furthermore, when the estimated temperature of the heating element 230 is lower than the preset temperature, then... Figure 8 As shown, the control unit 830 can generate a control signal to increase the time period of the switch S so that the power supply 290 can supply power to the heating element 230 for an extended period of time.

[0130] In the example above, the heating elements 230 are arranged in a matrix array, but the inventive concept is not limited thereto. For example, as Figure 9 As shown, heating elements can be disposed at the center of the support unit (i.e., support plate 210), along the radial direction and the circumferential direction of the support plate 210. For example, when viewed from above, some heating elements 230 can be disposed in the central region of the support plate 210, and some heating elements 230 can be disposed in the edge regions of the support plate 210. For example, some heating elements 230 can be disposed in a first edge region surrounding the central region, and some heating elements 230 can be disposed in a second edge region surrounding the first edge region. Furthermore, the heating elements 230 disposed in the edge regions of the support plate 210 can be arranged to be spaced apart from each other along the circumferential direction of the support plate 210.

[0131] Typically, as a method for controlling the temperature of a heater (such as heating element 230), an offset compensation method is used to compensate for a drop in temperature of the heating element 230 by applying a preset voltage to the heating element 230. For example, in the offset compensation method, a voltage of a preset magnitude is applied to the heating element 230 for a preset time. This method is a temperature compensation method that can be easily applied when the environmental changes around the heating element 230 are very limited.

[0132] However, the heating element 230 may age, and the environment around the heating element 230 may change depending on temperature variations around the support unit 200. Accordingly, a temperature sensor may preferably be used to provide feedback control for the heating element 230.

[0133] However, as mentioned above, with the increase in the number of heating elements 230, installing multiple temperature sensors leads to various mechanical limitations and is costly. However, according to an embodiment of the present invention, a current-measuring resistor RS is mounted on the existing power supply line 281 or power return line 282 to measure the current flowing in the current-measuring resistor RS, and based on this, the resistance and temperature of the heating element 230 can be estimated. That is, the temperature of the heating element 230 can be estimated without installing temperature sensors. Accordingly, the mechanical limitations of installing multiple temperature sensors and the problems caused by installing multiple temperature sensors can be solved. Furthermore, even when it is difficult or impossible to install temperature sensors, the present invention enables feedback control of the heating element 230 based on the estimated temperature of the heating element 230, thereby improving the robustness of the heating element 230 to external environments.

[0134] The effects of this invention are not limited to those described above, and those skilled in the art to which this invention pertains can clearly understand the effects not mentioned from the specification and drawings.

[0135] Although preferred embodiments of the inventive concept have been shown and described herein, the inventive concept is not limited to the specific embodiments described above, and it should be noted that those skilled in the art to which the inventive concept pertains can implement the inventive concept in various ways without departing from the essence of the inventive concept claimed in the claims, and modifications should not be interpreted separately from the technical spirit or prospect of the inventive concept.

Claims

1. A substrate processing apparatus, the substrate processing apparatus comprising: A chamber having a processing space; as well as A support unit, configured to support and heat the substrate within the processing space, and The support unit includes: At least one heating element, said at least one heating element being used to regulate the temperature of the substrate; A power source for generating power applied to the at least one heating element; A power supply line for transmitting power generated by the power source to the at least one heating element; A power return line, wherein the power return line is used to ground the at least one heating element; and A current-measuring resistor is disposed on the power supply line or the power return line and is used to estimate the temperature of the at least one heating element. Wherein, the resistance of the current measuring resistor is smaller than the resistance of the at least one heating element. The support unit includes a first plate and a second plate disposed below the first plate. The first plate includes: An insulating layer, wherein the at least one heating element is embedded within the insulating layer; and A dielectric layer, in which electrostatic electrodes for electrostatically holding the substrate are embedded, and The second plate has a fluid channel through which the cooling fluid flows. The current measuring resistor is located on the outside of the insulating layer.

2. The substrate processing apparatus according to claim 1, wherein, The ratio of the resistance of the current measuring resistor to the resistance of the at least one heating element is 1:1000 to 1:15000.

3. The substrate processing apparatus according to claim 2, wherein, The support unit further includes at least one switch on the power supply line and / or the power supply line itself, and If the at least one switch is turned on, the current measuring resistor is connected in series with the at least one heating element.

4. The substrate processing apparatus according to any one of claims 1 to 3, further comprising a control unit configured to control the support unit, and in, The control unit includes: A resistance measuring unit, configured to measure the current flowing through the current measuring resistor, and to measure the resistance of the at least one heating element based on the measured current; and A temperature estimation unit is configured to estimate the temperature of the at least one heating element based on the resistance of the at least one heating element as measured by the resistance measurement unit.

5. The substrate processing apparatus according to claim 4, wherein, The resistance measuring unit determines that the resistance of the at least one heating element decreases as the current flowing through the current measuring resistor increases.

6. The substrate processing apparatus according to claim 4, wherein, The temperature estimation unit estimates the temperature of the heating element based on reference data representing a one-to-one correspondence between the resistance of the at least one heating element and its temperature, and on the resistance of the at least one heating element as measured by the resistance measurement unit.

7. The substrate processing apparatus according to claim 4, wherein, The control unit includes a control section configured to control the power supply and / or switch based on the temperature of the at least one heating element estimated by the temperature estimation unit.

8. The substrate processing apparatus according to claim 7, wherein, If the temperature of the at least one heating element estimated by the temperature estimation unit is lower than a preset temperature, the control unit generates a control signal to increase the output of the power supply.

9. The substrate processing apparatus according to claim 7, wherein, If the temperature of the at least one heating element estimated by the temperature estimation unit is lower than a preset temperature, the control unit generates a control signal to increase the time period during which the switch is turned on.

10. The substrate processing apparatus according to claim 4, wherein, The at least one heating element, the power supply line, and the power return line are each configured as multiple, and Each heating element is connected to any one of the plurality of power supply lines and any one of the plurality of power return lines, but does not share the same power supply line or the same power return line.

11. The substrate processing apparatus according to claim 10, wherein, The rectifier is located on the power supply line and / or the power return line, and the rectifier prevents reverse current from flowing toward the power source.

12. The substrate processing apparatus according to claim 10, wherein, When viewed from above, the multiple heating elements are arranged in an M×N matrix array.

13. The substrate processing apparatus according to claim 10, wherein, Multiple heating elements are arranged at the center of the support unit and heat corresponding portions of the substrate along the radial and circumferential directions of the support unit.

14. A substrate processing apparatus, the substrate processing apparatus comprising: A chamber having a processing space; A support unit configured to support and heat a substrate in the processing space; as well as A plasma source, said plasma source being used to generate plasma for processing the substrate, and The support unit includes: At least one heating element, said at least one heating element being used to regulate the temperature of the substrate; A power source for generating power applied to the at least one heating element; A power supply line for transmitting the power to the at least one heating element; A power return line, wherein the power return line is used to ground the at least one heating element; and A current-measuring resistor is disposed on the power supply line or the power return line and is used to estimate the temperature of the at least one heating element. The resistance of the current-measuring resistor is smaller than the resistance of the at least one heating element. The support unit includes a first plate and a second plate disposed below the first plate. The first plate includes: An insulating layer, wherein the at least one heating element is embedded within the insulating layer; and A dielectric layer, in which electrostatic electrodes for electrostatically holding the substrate are embedded, and The second plate has a fluid channel through which the cooling fluid flows. The current measuring resistor is located on the outside of the insulating layer.

15. The substrate processing apparatus according to claim 14, wherein, The ratio of the resistance of the current measuring resistor to the resistance of the at least one heating element is 1:1000 to 1:15000.

16. The substrate processing apparatus of claim 14, further comprising a control unit configured to control the support unit, and in, The control unit includes: A resistance measuring unit, configured to measure the current flowing through the current measuring resistor, and to measure the resistance of the at least one heating element based on the measured current; and A temperature estimation unit is configured to estimate the temperature of the at least one heating element based on the resistance of the heating element as measured by the resistance measurement unit.

17. The substrate processing apparatus according to claim 16, wherein, The control unit includes a control unit configured to feed back and control the temperature of the at least one heating element based on an estimated temperature of the at least one heating element estimated by the temperature estimation unit.

18. A method for controlling the temperature of a heating element in a support unit, The support unit includes the heating element for regulating the temperature of the substrate; a power source for generating power applied to the heating element; a power supply line for transmitting the power to the heating element; a power return line for grounding the heating element; and a current measuring resistor disposed on the power supply line or the power return line for estimating the temperature of the heating element. and a first plate and a second plate disposed below the first plate, and in, The first board includes: An insulating layer, wherein the heating element is embedded within the insulating layer; and A dielectric layer, in which electrostatic electrodes for electrostatically holding the substrate are embedded, and The second plate has a fluid channel through which the cooling fluid flows. The current-measuring resistor is positioned on the outside of the insulating layer. The resistance of the current measuring resistor is smaller than the resistance of the heating element. The method includes: The current flowing through the measuring resistor is measured, and the resistance of the heating element is measured based on the measured current. The temperature of the heating element is estimated based on the measured resistance of the heating element; and The temperature of the heating element is controlled based on the estimated temperature feedback of the heating element.

Images