Photosensitive element substrate and method for manufacturing the same
By introducing a multi-layer structure design into the flexible photosensitive element substrate, including first and second flexible structures and a metal layer, the problems of easy damage and image inhomogeneity during the manufacturing process of the photosensitive element are solved, thereby improving mechanical strength and image quality.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- AU OPTRONICS CORP
- Filing Date
- 2022-12-16
- Publication Date
- 2026-06-16
Smart Images
Figure CN115911070B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to a substrate and a method for manufacturing the same, and more particularly to a photosensitive element substrate and a method for manufacturing the same. Background Technology
[0002] Photosensitive elements have a wide range of applications, with image sensors commonly used in electronic devices such as mobile phones, tablets, and laptops being a prime example. In addition, non-visible light (e.g., X-ray) sensors used in security checks, industrial inspections, or medical examinations are becoming a key development area for manufacturers due to their high added value.
[0003] Photosensitive substrates used in X-ray imaging typically have a photosensitive element layer and a scintillator layer on one side to sense X-ray signals. If the photosensitive substrate is flexible, during its manufacturing process, the flexible structure and photosensitive element layer are usually formed on a carrier plate first, and then the flexible structure and photosensitive element layer are peeled off from the carrier plate and attached to the flexible substrate. This peeling process often causes damage to the photosensitive element and can lead to image murmurs. Summary of the Invention
[0004] This invention provides a photosensitive element substrate and its manufacturing method, which can improve the mechanical strength of the photosensitive element substrate and improve the image quality.
[0005] The method for manufacturing a photosensitive element substrate according to the present invention includes the following steps: providing a carrier plate, forming a first resin layer on the carrier plate, and forming a first barrier layer on the first resin layer. Then, forming a metal layer on the first barrier layer, wherein the thickness of the metal layer is 130 nm. Up to 4000 Between. A second resin layer is formed on the metal layer, and a second barrier layer is formed on the second resin layer. An electronic component layer is formed on the second barrier layer, wherein the electronic component layer includes a thin-film transistor and a photodiode.
[0006] The photosensitive element substrate of the present invention includes a first flexible structure, a metal layer, a second flexible structure, and an electronic component layer. The first flexible structure includes a first resin layer and a first barrier layer disposed on the first resin layer. The metal layer is disposed on the first barrier layer. The second flexible structure includes a second resin layer disposed on the metal layer and a second barrier layer disposed on the second resin layer, wherein the metal layer is disposed between the first barrier layer and the second resin layer, and the thickness of the metal layer is 130 mm. Up to 4000 Between. An electronic component layer is disposed on the second flexible structure, wherein the electronic component layer includes thin-film transistors and photodiodes. Attached Figure Description
[0007] Figures 1A to 1DThis is a cross-sectional schematic diagram of the manufacturing process of a photosensitive element substrate according to an embodiment of the present invention.
[0008] Figures 2A to 2B This is a cross-sectional schematic diagram of the manufacturing process of a photosensitive element substrate according to another embodiment of the present invention.
[0009] Figures 3A to 3B This is a cross-sectional schematic diagram of the manufacturing process of a photosensitive element substrate according to another embodiment of the present invention.
[0010] Figure 4A A cross-sectional schematic diagram of a photosensitive element substrate according to another embodiment of the present invention.
[0011] Figure 4B yes Figure 4A A top view of a photosensitive element substrate.
[0012] Figure 5A A top view of a photosensitive element substrate according to another embodiment of the present invention.
[0013] Figure 5B yes Figure 5A A magnified top view of region A of the photosensitive element substrate.
[0014] Figure 5C yes Figure 5B A cross-sectional view along section line B-B'.
[0015] Explanation of reference numerals in the attached figures:
[0016] 10, 20, 30, 40, 50: Photosensitive element substrate
[0017] 100a, 100b, 100c: substrate
[0018] 101: Carrier board
[0019] 102: Release layer
[0020] 110: First flexible structure
[0021] 112: First resin layer
[0022] 114: First Barrier Layer
[0023] 120: Metal layer
[0024] 130: Second flexible structure
[0025] 132: Second resin layer
[0026] 134: Second Barrier Layer
[0027] 140: Electronic Components Layer
[0028] 150: Scintillator layer
[0029] 160: Conductive film
[0030] CH: Semiconductor Channel Layer
[0031] G: Gate
[0032] GI: Gate insulating layer
[0033] D: Drain electrode
[0034] E1: First electrode
[0035] E2: Second electrode
[0036] LN1: First signal line
[0037] LN2: Second signal line LN3: Third signal line
[0038] L1: X-ray
[0039] L2, L3: Visible light
[0040] L4: Reflected light
[0041] IL1, IL2, IL3, IL4, IL5: Insulating layers; OP1, OP2: Openings
[0042] PD: Photodiode
[0043] pH: Photosensitive layer
[0044] PL1, PL2: Planarization layers
[0045] R1: Active Zone
[0046] R2: Surrounding Area
[0047] S: Source
[0048] T: Thin-film transistor
[0049] V1, V2: Through holes Detailed Implementation
[0050] Figures 1A to 1D This is a cross-sectional schematic diagram of the manufacturing process of a photosensitive element substrate according to an embodiment of the present invention.
[0051] Please refer to Figure 1AA carrier plate 101 is provided. The carrier plate 101 is a rigid substrate, and its material is, for example, glass, ceramic, silicon wafer, or other rigid materials. In this embodiment, a release layer 102 may be formed on the carrier plate 101, allowing the carrier plate 101 to be separated from the film layer formed in subsequent process steps through the release layer 102. In some embodiments, the release layer 102 is, for example, composed of a material with weak adhesion. In other embodiments, the adhesion of the material constituting the release layer may be reduced by thermal processing, ultraviolet (UV) processing, laser processing, or other similar processes.
[0052] Please continue to refer to Figure 1A A first resin layer 112 is formed on a carrier plate 101, and a first barrier layer 114 is formed on the first resin layer 112. The material of the first resin layer 112 is, for example, polyimide (PI), polyethylene terephthalate (PET), or other flexible materials. The material of the first barrier layer 114 can be, for example, nitrides, oxides, oxynitrides, or other inorganic materials, but the invention is not limited thereto. In some embodiments, the thickness of the first resin layer 112 is between 2 μm and 10 μm, and the thickness of the first barrier layer 114 is between 100 nm and 900 nm. The first resin layer 112 and the first barrier layer 114 constitute a first flexible structure 110.
[0053] Please continue to refer to Figure 1A A metal layer 120 is formed on the first barrier layer 114. The material of the metal layer 120 is, for example, molybdenum, aluminum, or other suitable metal. The thickness of the metal layer 120 can be 130 mm. Up to 4000 In some embodiments, the method of forming the metal layer 120 includes physical vapor deposition, chemical vapor deposition, atomic layer deposition, or other suitable processes. In some embodiments, the metal layer 120 may be patterned by an etching process.
[0054] Please continue to refer to Figure 1AA second resin layer 132 is formed on the metal layer 120, and a second barrier layer 134 is formed on the second resin layer 132. In some embodiments, the metal layer 120 is patterned to have a plurality of openings, and the second resin layer 132 fills the openings of the metal layer 120 and contacts the first barrier layer 114. The material of the second resin layer 132 is, for example, polyimide (PI), polyethylene terephthalate (PET), or other flexible materials. The material of the second barrier layer 134 can be, for example, nitrides, oxides, oxynitrides, or other inorganic materials, but the invention is not limited thereto. In some embodiments, the thickness of the second resin layer 132 is between 2 μm and 10 μm, and the thickness of the second barrier layer 134 is between 100 nm and 900 nm. The second resin layer 132 and the second barrier layer 134 constitute a second flexible structure 130. In some embodiments, the first resin layer 112 and the second resin layer 132 comprise the same material, and the first barrier layer 114 and the second barrier layer 134 comprise the same material, but the present invention is not limited thereto.
[0055] Please continue to refer to Figure 1A An electronic component layer 140 is formed on the second barrier layer 134. The electronic component layer 140 may include signal lines (not shown), thin-film transistors (not shown), and photodiodes (not shown), but the invention is not limited thereto. The electronic component layer 140 is adapted to convert visible light signals into electrical signals. In some embodiments, a scintillator layer 150 may optionally be formed on the electronic component layer 140. The scintillator layer 150 is adapted to convert X-rays into visible light.
[0056] Please refer to Figure 1B The carrier plate 101 is then removed. For example, external energy can be applied to the release layer 102 by means of ultraviolet light, laser, visible light, or heat to reduce the adhesion of the release layer 102, and then the carrier plate 101 is removed. In some embodiments, the carrier plate 101 can also be removed by mechanical peeling or other suitable removal processes, which are not limited to this invention. Since the metal layer 120 is disposed between the first flexible structure 110 and the second flexible structure 130, the metal layer 120 can strengthen the overall structure and prevent the electronic component layer 140 from being damaged during the process of removing the carrier plate 101. In addition, the metal layer 120 has the effect of shielding static electricity, which can prevent the static electricity generated during the removal of the carrier plate 101 from damaging the electronic component layer 140.
[0057] Please refer to Figure 1CThe substrate 100a is attached to the first resin layer 112. The substrate 100a is a flexible substrate, and the material of the substrate 100a is, for example, polyethylene terephthalate (PET), polyimide (PI), or other flexible materials. In some embodiments, the thickness of the substrate 100a is between 50 μm and 500 μm.
[0058] Please refer to Figure 1D Optionally, a conductive film 160 is disposed on a substrate 100a, with the substrate 100a located between the conductive film 160 and the first resin layer 112. The material of the conductive film 160 is, for example, a conductive polymer material or a polymer material containing conductive material internally. The conductive film 160 can reduce the possibility of damage to the electronic component layer 140 due to static electricity during subsequent modularization processes of the photosensitive element substrate 10. In some embodiments, the conductive film 160 is an adhesive tape, and the method of disposing of the conductive film 160 includes attaching the conductive film 160 to the substrate 100a. In some embodiments, during the attachment of the conductive film 160, uneven attachment may occur due to process errors.
[0059] After the above process, the fabrication of the photosensitive element substrate 10 can be roughly completed.
[0060] Please refer to Figure 1D The photosensitive element substrate 10 includes a first flexible structure 110, a metal layer 120, a second flexible structure 120, and an electronic component layer 140. In this embodiment, the photosensitive element substrate 10 further includes a conductive film 160, a substrate 100a, and a scintillator layer 150. The first flexible structure 110 is disposed on the substrate 100a. The first flexible structure 110 includes a first resin layer 112 and a first barrier layer 114 disposed on the first resin layer 112. The metal layer 120 is disposed on the first barrier layer 114, and the thickness of the metal layer 120 can be 130 mm. Up to 4000 A second flexible structure 130 is disposed on the metal layer 120. The second flexible structure 130 includes a second resin layer 132 and a second barrier layer 134 disposed on the second resin layer 132. In other words, the metal layer 120 is disposed between the first flexible structure 110 and the second flexible structure 130, and is located between the first barrier layer 114 and the second resin layer 132. An electronic component layer 140 is disposed on the second flexible structure 130. A scintillator layer 150 is disposed on the electronic component layer 140. A conductive film 160 is disposed on the substrate 100a, and the substrate 100a is located between the conductive film 160 and the first resin layer 112. That is, the conductive film 160, the first flexible structure 110, the metal layer 120, and the second flexible structure 120 are respectively disposed on both sides of the substrate 100a.
[0061] In this embodiment, the substrate 100a is a flexible substrate, thus the photosensitive element substrate 10 is flexible and can be used flexibly according to the shape of different objects under test, such as for pipeline inspection, welding inspection, etc., but the present invention is not limited thereto. In other embodiments, the substrate 100a can be a rigid planar substrate or a rigid curved substrate.
[0062] In some embodiments, the metal layer 120 is floating. In other words, the metal layer 120 is not directly electrically connected to the components in the electronic component layer 140.
[0063] When performing X-ray sensing using the photosensitive substrate 10, the photosensitive substrate 10 can convert X-ray L1 into visible light L2 through the scintillator layer 150. After the visible light L2 is incident on the electronic component layer 140, part of the visible light L2 is absorbed by the electronic component layer 140, while another part of the visible light L3 passes through the electronic component layer 140. Since the metal layer 120 is disposed on the back side of the electronic component layer 140 and the thickness of the metal layer 120 is 130 mm... Up to 4000 In this process, at least a portion of the visible light L3 passes through the metal layer 120 before incident on the conductive film 160, causing the visible light L3 to be reflected by the metal layer 120 to form reflected light L4, which then returns to the electronic component layer 140. In other words, the metal layer 120 can improve the problem of visible light L3 irradiating the conductive film 160, thereby avoiding image unevenness caused by uneven adhesion of the conductive film 160 to the photosensitive substrate 10. Furthermore, even if the visible light L3 passes through the patterned metal layer 120 and is reflected by the uneven conductive film 160 to form directionally deflected reflected light, the directionally deflected reflected light is easily reflected again by the patterned metal layer 120 and leaves the photosensitive substrate 10, thereby avoiding image quality degradation caused by directionally deflected reflected light.
[0064] Figures 2A to 2B This is a cross-sectional schematic diagram of the manufacturing process of a photosensitive element substrate according to another embodiment of the present invention. Figures 2A to 2B Can continue Figure 1B A cross-sectional schematic diagram of the manufacturing method of the photosensitive element substrate. (Regarding...) Figures 1A to 1B The steps are explained in the foregoing embodiments and will not be repeated here. It must be noted that... Figures 2A to 2B The embodiments follow Figures 1A to 1D The component reference numerals and partial contents of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here.
[0065] Please refer to Figure 2AAfter removing the carrier plate 101, the substrate 100b is attached to the first resin layer 112. The substrate 100b is a rigid curved substrate, and its material is, for example, glass, ceramic, silicon wafer or other suitable material. In this way, the first flexible structure 110, the metal layer 120, the second flexible structure 120 and the electronic component layer 140 can be bent to a certain extent according to the curvature of the substrate 100b.
[0066] Please refer to Figure 2B A conductive film 160 is disposed on the substrate 100b.
[0067] After the above processes, the fabrication of the photosensitive element substrate 20 can be largely completed. In this embodiment, the photosensitive element substrate 20 and... Figure 1D The main difference between the photosensitive element substrate 10 and the photosensitive element substrate 20 is that the substrate 100b of the photosensitive element substrate 20 is a rigid curved substrate.
[0068] Figures 3A to 3B This is a cross-sectional schematic diagram illustrating the manufacturing process of a photosensitive element substrate according to another embodiment of the present invention. It must be noted here that... Figures 3A to 3B The embodiments follow Figures 1A to 1D The component reference numerals and partial contents of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here.
[0069] Please refer to Figure 3A A carrier substrate 101 is provided. The carrier substrate 101 is a rigid planar substrate, and its material is, for example, glass, ceramic, silicon wafer, or other materials with a certain degree of rigidity. Then, a first resin layer 112 is formed on the carrier substrate 101 in sequence, and a first barrier layer 114 is formed on the first resin layer 112. A metal layer 120 is formed on the first barrier layer 114, a second resin layer 132 is formed on the metal layer 120, a second barrier layer 134 is formed on the second resin layer 132, an electronic component layer 140 is formed on the second barrier layer 134, and a scintillator layer 150 is formed on the electronic component layer 140. In this embodiment, the first resin layer 112 is in direct contact with the carrier substrate 101, that is, no release layer is provided between the first resin layer 112 and the carrier substrate 101.
[0070] Please refer to Figure 3B A conductive film 160 is placed on the carrier plate 101.
[0071] After the above processes, the fabrication of the photosensitive element substrate 30 can be largely completed. The photosensitive element substrate 30 of this embodiment and... Figure 1DThe main difference between the photosensitive element substrate 10 and the photosensitive element substrate 30 is that the substrate 100c of the photosensitive element substrate 30 is a rigid planar substrate. Therefore, during the manufacturing process, the carrier plate 101 can be directly used as the substrate 100c of the photosensitive element substrate 30, and the first flexible structure 110, the metal layer 120, the second flexible structure 120 and the electronic component layer 140 can be directly formed on the substrate 100c without the need for a carrier plate removal process.
[0072] Figure 4A A cross-sectional schematic diagram of a photosensitive element substrate according to another embodiment of the present invention. Figure 4B yes Figure 4A A top view of a photosensitive element substrate. For clarity, Figure 4B Some components are omitted from the diagram; only the relative positions of the metal layer 120 and the substrate 100a are schematically shown. The omitted parts can be referenced elsewhere. Figure 4A To understand. Figure 4A , 4B The embodiments follow Figures 1A to 1D The component reference numerals and partial contents of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here.
[0073] Please refer to Figure 4A and Figure 4B The main difference between the photosensitive substrate 40 of this embodiment and the photosensitive substrate 10 of FIG. 1 is that the metal layer 120 of the photosensitive substrate 40 is located only in the active region R1 of the photosensitive substrate 40. Specifically, the photosensitive substrate 40 has an active region R1 and a peripheral region R2 located on at least one side of the active region R1. The thin-film transistor (not shown) and photodiode (not shown) in the electronic component layer 140 are located in the active region R1, and the metal layer 120 is also located in the active region R1. In other words, the metal layer 120 can overlap with the thin-film transistor and the photodiode.
[0074] Although this embodiment shows the peripheral region R2 as surrounding the active region R1, it is not intended to limit the invention. The peripheral region R2 may be located on at least one side of the active region R1 or adjusted as needed. The peripheral region R2 may be provided with bonding pads (not shown), signal lines (not shown), or other components (not shown).
[0075] Figure 5A A top view of a photosensitive element substrate according to another embodiment of the present invention. Figure 5B yes Figure 5A A magnified top view of region A of the photosensitive element substrate. Figure 5C yes Figure 5B A sectional view along section line B-B'. For clarity, Figure 5BSome components are omitted from the diagram, and a portion of the structure of the metal layer 120 and the electronic component layer 140 is schematically shown in perspective. The omitted parts can be referred to... Figure 5C To understand. Figures 5A to 5C The embodiments follow Figures 4A to 4B The component reference numerals and partial contents of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here.
[0076] Please refer to Figures 5A to 5C In this embodiment, the photosensitive substrate 50 and Figures 4A to 4B The main difference between the photosensitive element substrate 40 and the photosensitive element substrate 50 is that the metal layer 120 of the photosensitive element substrate 50 includes multiple openings, and these openings overlap with the photosensitive diodes PD. Specifically, the electronic component layer 140 may include multiple arrayed photosensitive diodes PD and thin-film transistors T electrically connected to the corresponding photosensitive diodes PD. The photosensitive diodes PD and the thin-film transistors T are located in the active region R1 of the photosensitive element substrate 50.
[0077] The thin-film transistor T may include a gate G, a semiconductor channel layer CH, a source S, and a drain D. The gate G is disposed on the second barrier layer 134 and electrically connected to the first signal line LN1. In some embodiments, the first signal line LN1 and the gate G are located on the same conductive layer and are integrally connected. In some embodiments, the materials of the first signal line LN1 and the gate G may include metal, a nitride of a metal material, an oxide of a metal material, an oxide oxynitride of a metal material, or other suitable materials, or a stacked layer of a metal material and other conductive materials. The semiconductor channel layer CH is disposed above the gate G, and a gate insulating layer GI is sandwiched between the gate G and the semiconductor channel layer CH. In some embodiments, the semiconductor channel layer CH may include low-temperature polysilicon (LTPS), indium gallium zinc oxide (IGZO), or other semiconductor materials. The source S and the drain D are respectively disposed at both ends of the semiconductor channel layer CH to be electrically connected to the semiconductor channel layer CH. In some embodiments, the source S and the drain D are located on the same conductive layer. In some embodiments, the materials of the source S and the drain D include metal, nitride of metal, oxide of metal, oxynitride of metal, or other suitable materials, or a stacked layer of metal and other conductive materials.
[0078] A photodiode (PD) may include a first electrode E1, a photosensitive layer PH, and a second electrode E2. The first electrode E1 is disposed on the gate insulating layer GI and extends to the drain D, being electrically connected to the drain D. In some embodiments, the first electrode E1 and the drain D are located in the same conductive layer and are integrally connected. An insulating layer IL1 is disposed on the semiconductor channel layer CH, the source S, the drain D, and the first electrode E1. The insulating layer IL1 has an opening OP1 overlapping the first electrode E1. The photosensitive layer PH is disposed in the opening OP1 and on the first electrode E1. The material of the photosensitive layer PH may include silicon-rich oxide, silicon-rich nitride, silicon-rich oxynitride, silicon-rich carbide, silicon-rich oxycarbide, hydrogenated silicon-rich oxide, hydrogenated silicon-rich nitride, hydrogenated silicon-rich carbide, or a combination thereof. In other embodiments, the photosensitive layer PH may include a stacked layer of P-type semiconductors, intrinsically semiconductors, and N-type semiconductors. In other words, in other embodiments, the photosensitive layer PH may be a PIN diode. A second electrode E2 is disposed on the photosensitive layer PH. In some embodiments, the second electrode E2 includes a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide, or a stacked layer of at least two of the above, but the present invention is not limited thereto. An insulating layer IL2 is disposed on the photodiode PD and the thin-film transistor T to cover the insulating layer IL1, the photosensitive layer PH, and the second electrode E2. A planarization layer PL1 is disposed on the insulating layer IL2.
[0079] The source S can be electrically connected to the second signal line LN2 through a via V1. For example, the second signal line LN2 is disposed on the planarization layer PL1, and the via V1 can pass through the planarization layer PL1, the insulating layer IL2, and the insulating layer IL3 to be electrically connected to the source S. In some embodiments, the insulating layer IL3 can be disposed between the second signal line LN2 and the planarization layer PL1, and the insulating layer IL4 can cover the second signal line L2.
[0080] The second electrode E2 can be electrically connected to the third signal line LN3 through the via V2. For example, the third signal line LN3 is disposed on the insulating layer IL4, and the via V2 can pass through the insulating layer IL3, the planarization layer PL1, and the insulating layer IL2 to be electrically connected to the second electrode E2. In some embodiments, the insulating layer IL5 can be disposed on the third signal line LN3, and the planarization layer PL2 can be disposed on the insulating layer IL5.
[0081] The metal layer 120 is located in the active region R1 and is mesh-like, including multiple openings OP2, each opening OP2 overlapping at least one corresponding opening in the photodiode PD. In other words, the metal layer 120 does not overlap with the photodiode PD. This reduces the parasitic capacitance between the metal layer 120 and the photodiode PD.
Claims
1. A method for manufacturing a photosensitive element substrate, comprising: Provide a carrier board; A first resin layer is formed on the carrier plate; A first barrier layer is formed on the first resin layer, wherein the thickness of the first barrier layer is between 100 nm and 900 nm, and wherein the first resin layer and the first barrier layer constitute a first flexible structure. A metal layer is formed on the first barrier layer, wherein the thickness of the metal layer is between 130 Å and 4000 Å, and wherein the metal layer has multiple openings; A second resin layer is formed on the metal layer, wherein the second resin layer fills the openings in the metal layer and contacts the first barrier layer; A second barrier layer is formed on the second resin layer, wherein the second resin layer and the second barrier layer constitute a second flexible structure; and An electronic component layer is formed on the second barrier layer, wherein the electronic component layer includes a plurality of arrayed photodiodes and thin-film transistors electrically connected to the corresponding photodiodes, wherein each opening overlaps at least one of the photodiodes and at least one of the thin-film transistors.
2. The manufacturing method as described in claim 1, further comprising: Remove the carrier plate; as well as A flexible substrate or a curved substrate is attached to the first resin layer.
3. The manufacturing method as described in claim 2 further includes disposing a conductive film on the flexible substrate or the curved substrate, wherein the flexible substrate or the curved substrate is located between the conductive film and the first resin layer.
4. The manufacturing method of claim 2, wherein the material of the carrier plate includes glass, ceramic, or silicon wafer, the material of the flexible substrate includes polyethylene terephthalate or polyimide, and the material of the curved substrate includes glass, ceramic, or metal.
5. The manufacturing method as described in claim 1 further includes disposing a conductive film on the carrier plate, wherein the carrier plate is located between the conductive film and the first resin layer, and the carrier plate is a rigid substrate.
6. A photosensitive element substrate, comprising: A first flexible structure includes a first resin layer and a first barrier layer disposed on the first resin layer, wherein the thickness of the first barrier layer is between 100 nm and 900 nm. A metal layer is disposed on the first barrier layer, wherein the metal layer has a plurality of openings; A second flexible structure includes a second resin layer disposed on the metal layer and a second barrier layer disposed on the second resin layer, wherein the metal layer is disposed between the first barrier layer and the second resin layer, the thickness of the metal layer is between 130 Å and 4000 Å, and the second resin layer fills the openings in the metal layer and contacts the first barrier layer. as well as An electronic component layer is disposed on the second flexible structure, wherein the electronic component layer includes a plurality of arrayed photodiodes and thin-film transistors electrically connected to the corresponding photodiodes, wherein each opening overlaps at least one of the photodiodes and at least one of the thin-film transistors.
7. The photosensitive element substrate of claim 6, wherein the metal layer is a mesh.
8. The photosensitive element substrate of claim 7, wherein the metal layer is floating.
9. The photosensitive element substrate as claimed in claim 7, further comprising: A substrate is disposed on the first resin layer, and the first resin layer is located between the substrate and the first barrier layer, wherein the substrate includes a rigid planar substrate, a flexible substrate, or a rigid curved substrate.
10. The photosensitive element substrate as claimed in claim 9, further comprising: A conductive film is disposed on the substrate, and the substrate is located between the conductive film and the first resin layer; as well as A scintillator layer is disposed on the electronic component layer.