A display panel and display device

Abstract

The application discloses a display panel and a display device, the display panel comprising a substrate substrate and a driving circuit layer and a light shielding layer sequentially located on one side of the substrate substrate; the driving circuit layer comprises a plurality of insulating layers, and part of the insulating layers comprises an opening; the insulating layer comprises a first insulating layer; the first insulating layer covers the sidewall of the opening; and the light shielding layer covers the first insulating layer at the sidewall of the opening. By extending the insulating layer in the driving circuit layer to cover the sidewall of the opening of the driving circuit layer, and by covering the first insulating layer at the sidewall of the opening with the light shielding layer, the adhesion of the light shielding layer and the substrate substrate is increased, the thin film transistor in the driving circuit layer is wrapped, the influence of light on the thin film transistor in the driving circuit layer is reduced, the problem of light leakage of the thin film transistor (TFT) in the driving circuit layer is solved, and the display effect of the display panel is improved.

Description

Technical Field

[0001] This invention relates to the field of display technology, and more particularly to a display panel and a display device. Background Technology

[0002] In display panels, the thin-film transistors (TFTs) in the driving circuit layer are quite sensitive to light and are prone to light leakage, which affects the normal display of the display panel. Summary of the Invention

[0003] This invention provides a display panel and a display device. By extending at least one insulating layer within the driving circuit layer to cover the opening sidewall of the driving circuit layer, and covering the insulating layer at the opening sidewall with a light-shielding layer, it is beneficial to increase the adhesion between the light-shielding layer and the substrate, thereby achieving the encapsulation of the thin-film transistors in the driving circuit layer, reducing the influence of light on the thin-film transistors in the driving circuit layer, and solving the problem of light leakage of the thin-film transistors (TFTs) in the driving circuit layer.

[0004] In a first aspect, embodiments of the present invention provide a display panel, including a substrate and a driving circuit layer and a light-shielding layer sequentially located on one side of the substrate;

[0005] The driving circuit layer includes multiple insulating layers, some of which include openings; the insulating layers include a first insulating layer; the first insulating layer covers the sidewall of the opening; the light-shielding layer covers the first insulating layer at the sidewall of the opening.

[0006] Secondly, embodiments of the present invention also provide a display device, which includes the display panel provided in the first aspect.

[0007] In summary, the display panel provided in this embodiment of the invention includes a substrate and a driving circuit layer and a light-shielding layer sequentially located on one side of the substrate. The driving circuit layer includes multiple insulating layers, some of which include openings. The insulating layers include a first insulating layer that covers the sidewall of the opening. The light-shielding layer covers the first insulating layer at the sidewall of the opening. By extending the insulating layer within the driving circuit layer to cover the sidewall of the opening, and covering the first insulating layer at the sidewall of the opening with the light-shielding layer, the adhesion between the light-shielding layer and the substrate is increased. This achieves the encapsulation of the thin-film transistors (TFTs) in the driving circuit layer, reduces the impact of light on the TFTs within the driving circuit layer, solves the problem of light leakage in the TFTs within the driving circuit layer, and thus improves the display effect of the display panel. Attached Figure Description

[0008] Figure 1 This is a schematic diagram of the structure of a display panel provided by related technologies;

[0009] Figure 2 This is a schematic diagram of the surface of a display panel provided in an embodiment of the present invention;

[0010] Figure 3 yes Figure 2 A cross-sectional schematic diagram of a display panel along the AA' direction;

[0011] Figure 4 yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction;

[0012] Figure 5 yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction;

[0013] Figure 6 yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction;

[0014] Figure 7 yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction;

[0015] Figure 8 yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction;

[0016] Figure 9 yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction;

[0017] Figure 10 yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction;

[0018] Figure 11 yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction;

[0019] Figure 12 yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction;

[0020] Figure 13 This is a schematic diagram of another display device provided in an embodiment of the present invention. Detailed Implementation

[0021] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, and not all of the structures.

[0022] Figure 1 This is a structural diagram of a display panel provided by related technologies. (Combined with...) Figure 1 As shown, a display panel 100 in the related technology includes a display area A1 and a transparent area A2. When the display panel 100 is in transparent display mode, there is a large transparent area. The light emitted downward from the light-emitting element 11 in the display area A1 and the ambient light incident from the transparent area A2 reach the active layer 10 of the thin film transistor (TFT). The light undergoes total internal reflection on the glass surface of the substrate 110. The reflected light shines on the TFT device from the lower glass substrate. Due to the effect of light, the thin film transistor (TFT) is prone to light leakage, causing flickering when the display panel is lit, which affects the normal display of the display panel.

[0023] To address the aforementioned technical problems, embodiments of the present invention provide a display panel comprising a substrate and a driving circuit layer and a light-shielding layer sequentially located on one side of the substrate. The driving circuit layer includes multiple insulating layers, some of which include openings. Each insulating layer includes a first insulating layer covering the sidewall of the opening. The light-shielding layer covers the first insulating layer at the sidewall of the opening. By extending the insulating layer within the driving circuit layer to cover the sidewall of the opening, and covering the first insulating layer at the sidewall of the opening with the light-shielding layer, the adhesion between the light-shielding layer and the substrate is increased. This effectively encapsulates the thin-film transistors (TFTs) within the driving circuit layer, reducing the impact of light on the TFTs and solving the problem of light leakage in the TFTs within the driving circuit layer. This improves the display effect of the display panel.

[0024] The above is the core idea of ​​this invention. The technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0025] Figure 2 This is a schematic diagram of the surface of a display panel provided in an embodiment of the present invention; Figure 3 yes Figure 2 A cross-sectional schematic diagram of a display panel along the AA' direction; Figure 4 yes Figure 2A cross-sectional schematic diagram of another type of display panel along the AA' direction; Figure 5 yes Figure 2 A cross-sectional schematic diagram of another display panel along the AA' direction. (Combined with...) Figures 2-5 As shown, the display panel 200 provided in this embodiment of the invention includes a substrate 210 and a driving circuit layer 220 and a light-shielding layer 40 sequentially located on one side of the substrate 210; the driving circuit layer 220 includes multiple insulating layers, and part of the insulating layer includes an opening V; the insulating layer includes a first insulating layer 30; the first insulating layer 30 covers the sidewall of the opening V; the light-shielding layer 40 covers the first insulating layer 30 at the sidewall of the opening V.

[0026] Specifically, the display panel 200 includes organic light-emitting diode (OLED), light-emitting diode (LED), and micro light-emitting diode (Micro LED) displays, etc. This embodiment of the invention does not impose specific limitations on the type of display panel 200. The substrate 210 of the display panel can be a rigid material such as glass or silicon wafer, or a flexible material such as ultra-thin glass, metal foil, or polymer plastic. The flexible or rigid substrate 210 can block oxygen and moisture, preventing moisture or impurities from diffusing into the display panel through the substrate 210.

[0027] The structure of the driving circuit layer 30 will be described below using the top-gate type thin-film transistor of the display panel 200 as an example. The driving circuit layer 220 includes structures such as thin-film transistors (TFTs), capacitors (C), and wiring (L). The film layers of the driving circuit layer 220 may include a buffer layer 221, an active layer 222, a gate insulating layer 223, a gate 224, an intermediate dielectric layer 225, an interlayer dielectric layer 226, a source electrode 227s, a drain electrode 227d, a passivation layer 228, a connecting electrode 229, and a planarization layer 230.

[0028] The buffer layer 221 prevents impurities such as oxygen and moisture from penetrating from the substrate 210 and can planarize the substrate 210. Furthermore, the buffer layer 221 can control the heat transfer rate during the annealing process used to form the active layer 222. The buffer layer 221 may comprise a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride.

[0029] An active layer 222 may be disposed on a buffer layer 221. The active layer 222 may include a channel region 222c and source regions 222s and drain regions 222d located at opposite ends of the channel region 222c. Taking an active layer 222 comprising a polysilicon semiconductor as an example, the channel region 222c comprises an undoped polysilicon semiconductor, and the source regions 222s and drain regions 222d may comprise doped polysilicon semiconductors. The active layer 222 may be an n-type semiconductor or a p-type semiconductor. As an example, the impurities doped in the source regions 222s and drain regions 222d may be n-type impurities; for example, materials such as phosphorus (P) ions can be used as n-type impurities. As an example, the impurities doped in the source regions 222s and drain regions 222d may be p-type impurities; for example, materials such as boron (B) ions can be used as p-type impurities. The active layer 222 may comprise a silicon semiconductor or an oxide semiconductor. The silicon semiconductor may include one or more of amorphous silicon, monocrystalline silicon, and polycrystalline silicon. As an example, the active layer 222 may include low-temperature polycrystalline silicon. A gate insulating layer 223 covers the active layer 222 and may be disposed on a buffer layer 221. The gate insulating layer 223 may include a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride. A gate 224 may be disposed on the gate insulating layer 223 and may overlap with the channel region 222c of the active layer 222. The gate 224 and the active layer 222 may form a thin-film transistor (TFT). The gate 224 may include metals such as aluminum (Al), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), and molybdenum (Mo), their alloys, their nitrides, conductive metal oxides, and transparent conductive materials. As an example, the gate 224 may include molybdenum (Mo).

[0030] An intermediate dielectric layer 225 covers the gate 224 and may be disposed on the gate insulating layer 223. The intermediate dielectric layer 225 may include a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride. As an example, the intermediate dielectric layer 225 may include silicon nitride. An interlayer dielectric layer 226 may be disposed on the intermediate dielectric layer 225, and the interlayer dielectric layer 226 may include a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride.

[0031] The source electrode 227s can contact the source region 222s of the active layer 222, and the drain electrode 227d can contact the drain region 222d of the active layer 222. The source electrode 227s and the drain electrode 227d can be formed in the same process and are located in the same film layer. As an example, a first contact hole CH1 exposing a portion of the source region 222s and a second contact hole CH2 exposing a portion of the drain region 222d can each be formed through a gate insulating layer 223, an intermediate dielectric layer 225, and an interlayer dielectric layer 226. The source electrode 227s can contact the upper surface of the source region 222s through the first contact hole CH1, and the drain electrode 227d can contact the upper surface of the drain region 222d through the second contact hole CH2. The source electrode 227s and the drain electrode 227d can include metals such as aluminum (Al), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum (Mo), their alloys, their nitrides, conductive metal oxides, transparent conductive materials, etc. As an example, the source 227s and drain 227d may include a Ti / Ai / Ti metal stack structure.

[0032] Passivation layer 228 covers source 227s and drain 227d, and passivation layer 228 may be disposed on interlayer dielectric layer 226. Passivation layer 228 may comprise a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride. As an example, passivation layer 228 may comprise silicon nitride.

[0033] The capacitor C may include a first electrode CP1 and a second electrode CP2, which can be used to maintain the node potential in the driving circuit. The first electrode CP1 may be located between the gate insulating layer 223 and the intermediate dielectric layer 225, and is located on the same film layer as the gate 224, and may be formed of the same material as the gate 224. The second electrode CP2 may be located between the intermediate dielectric layer 225 and the interlayer dielectric layer 226, and the second electrode CP2 may include metals such as aluminum (Al), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum (Mo), their alloys, their nitrides, conductive metal oxides, transparent conductive materials, etc. As an example, the second electrode CP2 may include molybdenum (Mo).

[0034] The trace L can be used to provide various signals. Taking the example of trace L located between the interlayer dielectric layer 226 and the passivation layer 228, trace L can be located on the same film layer as the source 227s and drain 227d, and can be made of the same material as the source 227s and drain 227d. Depending on the type and requirements of the signal transmitted by trace L, trace L can be located on one or more other film layers. For example, trace L can be located on the same film layer as the gate 224, or trace L can be located on the same film layer as the second electrode CP2, and so on.

[0035] The planarization layer 230 has a planarization function. The drain 227 of the thin-film transistor TFT is electrically connected to the first electrode 51 of the light-emitting element 50 through the connecting electrode 229a, and the connecting electrode 229b is electrically connected to the second electrode 52 of the light-emitting element 50. The driving circuit layer 220 includes a driving circuit for driving the light-emitting element 50 to emit light. As an example, the light-emitting element 50 may be a micro light-emitting diode (Micro LED), and the TFT is used to drive the light-emitting element 50 to emit light for display.

[0036] As shown above, combined with Figure 3 and Figure 5 As shown, the gate insulating layer 223, intermediate dielectric layer 225, interlayer dielectric layer 226, and passivation layer 228 can all be insulating layers in the driving circuit layer 220 of the display panel 200. Since some insulating layers include an opening V, the corresponding area can be a light-transmitting or transparent area that may include the display panel 200, and light leakage exists in the sidewall area of ​​the opening V. In this embodiment, any one of the gate insulating layer 223, intermediate dielectric layer 225, interlayer dielectric layer 226, and passivation layer 228 is extended to cover the sidewall of the opening V, such as... Figure 3 The passivation layer 228 covers the surface of the interlayer dielectric layer 226 away from the substrate 210 and extends to cover the sidewalls of the gate insulating layer 223, the intermediate dielectric layer 225, and the interlayer dielectric layer 226 at the opening V. The light-shielding layer 40 covers the surface of the planarization layer 310 away from the substrate 210 and extends to cover the passivation layer 228b at the sidewalls of the opening V. Figure 5 The intermediate dielectric layer 226 covers the surface of the intermediate dielectric layer 225 away from the substrate 210 and extends to cover the gate insulating layer 223 and the sidewall of the intermediate dielectric layer 225 at the opening V. The light-shielding layer 40 covers the surface of the planarization layer 310 away from the substrate 210 and extends to cover the intermediate dielectric layer 226b at the sidewall of the opening V. By increasing the coverage area of ​​a certain insulating layer in the driving circuit layer 220, the light-shielding layer 40 is extended to cover the insulating layer at the sidewall of the opening V. The insulating layer at the sidewall of the opening V can increase the adhesion between the light-shielding layer 40 and the V sidewall, prevent the light-shielding layer 40 from falling off, and ensure the stability of the structure of the light-shielding layer 40.

[0037] The light-shielding layer 40 includes a light-absorbing material that can be used for light blocking; for example, the light-shielding layer 40 includes a black pigment. As an example, the light-shielding layer 40 can be a black photoresist. On one hand, the light-shielding layer 40 can greatly reduce the reflectivity of the metal components in the driving circuit layer 220 to the light inside the display panel; on the other hand, the light-shielding layer 40 can also reduce the impact of external transmitted light from the opening V on the performance of the thin-film transistors (TFTs) in the driving circuit layer 220, reducing light leakage; furthermore, the light-shielding layer 40 can absorb the light emitted downwards from the light-emitting element 50, preventing it from being reflected and affecting the display effect.

[0038] It should be noted that the display panel also includes other film layers, such as encapsulation layers, which work together to enable the display panel to display normally. These will not be listed here.

[0039] In summary, the display panel provided by the embodiments of the present invention, by covering the opening sidewall with the first insulating layer in the multilayer insulating layers of the display panel driving circuit layer, and extending the light-shielding layer to the opening sidewall and covering the first insulating layer at the opening sidewall, increases the adhesion between the light-shielding layer and the driving circuit layer through the first insulating layer at the opening sidewall, avoids the light-shielding layer from falling off, ensures the light-shielding characteristics of the light-shielding layer, solves the problem of light leakage of the thin-film transistor (TFT) in the driving circuit layer, avoids flickering when the display panel is lit, and improves the display effect of the display panel.

[0040] One feasible implementation method is to continue combining Figures 3-5 As shown, the display panel 200 provided in this embodiment of the invention includes a display area AA and a non-display area NA, with the display area AA surrounding at least a portion of the non-display area NA; the non-display area NA includes an opening V; the display area AA includes an active layer 222, a first insulating layer 30, and a plurality of light-emitting elements 50 sequentially located on one side of a substrate 210; the first insulating layer 30 includes a first sub-insulating portion 30a and a second sub-insulating portion 30b, with the plane of the first sub-insulating portion 30a parallel to the first plane (XOY plane); the second sub-insulating portion 30b covers the first sub-insulating portion 30a. At least a portion of the sidewalls of the film layer between a and the substrate 210; the light-shielding layer 40 includes a first light-shielding portion 40a and a second light-shielding portion 40b; the film layer where the first light-shielding portion 40a is located is between the active layer 222 and the light-emitting element 50; along the first direction (shown in the Z direction in the figure), the first light-shielding portion 40a projects and covers the active layer 222; the second light-shielding portion 40b covers the second sub-insulator portion 30b; wherein, the first plane (XOY plane) is parallel to the plane where the substrate 210 is located, and the first direction (shown in the Z direction in the figure) is the thickness direction of the display panel.

[0041] Specifically, taking a Micro LED display panel as an example, the display panel 200 includes a display area AA and a non-display area NA. The display area AA is used for normal image display, and the thin-film transistor (TFT) and light-emitting element 50 are both located within the display area AA. Figure 2 As shown, the display area AA can surround the non-display area NA. The non-display area NA is a light-transmitting area V. If it is reused as a light-sensing element setting area, devices such as image sensors and fingerprint sensors can be set. Ambient light from the outside enters the display panel 200 through the light-transmitting area V to enable the image sensor, fingerprint sensor and other devices to receive light.

[0042] To prevent some of the display light or ambient light emitted from the light-emitting element 50 from reaching the active layer 222 of the thin-film transistor TFT and causing light leakage, a first insulating layer 30 is prepared by vapor deposition or physical vapor deposition. The first insulating layer 30 is one of the multiple insulating layers in the driving circuit layer 220, taking the passivation layer 228 as an example. By extending the passivation layer 228 to cover the sidewall of the non-display area NA, the first sub-insulating portion 30a covers the interlayer dielectric layer 226, the source electrode 227s, and the drain electrode 227d, and the second sub-insulating portion 30b covers the sidewall of the gate insulating layer 223, the intermediate dielectric layer 225, and the interlayer dielectric layer 226. A light-shielding layer 40 is provided between the driving circuit layer 220 and the multiple light-emitting elements 50 and on the sidewall of the non-display area NA using a patterning process. The projection of the first light-shielding portion 40a onto the plane of the substrate 210 covers each thin-film transistor TFT to block the light emitted by the light-emitting element 50. A portion of the display light passes through the display panel 200 and reaches the active region 222 of the thin-film transistor TFT. A second light-shielding portion 40b is provided to cover the sidewall of the non-display area NA and to contact the second sub-insulating portion 30b. Since the second sub-insulating portion 30b is composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride, it is beneficial to improve the adhesion between the second light-shielding portion 40b and the second sub-insulating portion 30b, ensuring the structural stability and light-shielding effect of the light-shielding layer 40, avoiding the light effect generated by the thin-film transistor TFT, thereby improving the visual imaging effect of the display panel. The light-shielding layer 40 can be fabricated in the same layer using existing film layering processes, or it can be fabricated using additional film layering processes; no specific restrictions are imposed here.

[0043] It should be noted that "patterning" in this article specifically refers to non-integral structure, that is, structure formed by first creating an integral layer of material and then carving out a specific shape during the manufacturing process.

[0044] Figure 6 yes Figure 2 A cross-sectional schematic diagram of another display panel along the AA' direction. One possible implementation, combined with... Figure 2 and Figure 6As shown, another display panel provided in this embodiment of the invention further includes an adhesive layer 222e, which is on the same layer as the active layer 222 and extends from the display area AA to a portion of the non-display area NA; a second sub-insulating portion 30b covers the sidewall of the film layer between the first sub-insulating portion 30a and the adhesive layer 222e; and a second light-shielding portion 40b contacts the surface of the adhesive layer 222e on the side away from the substrate 210.

[0045] Specifically, since the surface of the substrate 210 is usually relatively smooth, if the light-shielding layer 40 directly contacts the substrate 210, the contact surface is prone to detachment. A patterned fabrication process is also employed, where the adhesion layer 222e is fabricated in the same layer as the active layer 222, eliminating the need for additional film fabrication processes. The adhesion layer 222e is located at the boundary between the display area AA and the non-display area NA, extending from the display area AA to a portion of the non-display area NA. Specifically, as shown in the Z direction in the figure, the projection of the adhesion layer 222e overlaps with a portion of the substrate 210 in the non-display area NA. Taking the passivation layer 228 as the first insulating layer 30 as an example, a second sub-insulating portion 30b is provided to cover the sidewall of the film layer between the first sub-insulating portion 30a and the adhesion layer 222e. The second light-shielding portion 40b extends along the Z direction in the figure, covering the surface of the second light-shielding portion 40b until it terminates on the surface of the adhesion layer 222e away from the substrate 210. By adding an adhesion layer 222e to the non-display area NA, the adhesion between the second light-shielding part 40b and the surface of the second light-shielding part 40b and the adhesion layer 222e is improved, ensuring the structural stability of the light-shielding layer 40. At the same time, since the adhesion layer 222e is on the same layer as the active layer 222 and the light-shielding layer 40 is in contact with the adhesion layer 222e, the thin-film transistor TFT of the driving circuit layer 220 can be effectively wrapped, blocking the ambient light incident along the non-display area NA, reducing the light leakage of the thin-film transistor TFT, avoiding the flickering problem when the display panel is lit, thereby improving the display effect of the display panel.

[0046] Figure 7 yes Figure 2 A cross-sectional schematic diagram of another display panel along the AA' direction. One possible implementation, combined with... Figure 2 and Figure 7 As shown, another display panel provided in this embodiment of the invention has a second sub-insulating portion 30b covering the sidewall of the film layer between the first sub-insulating portion 30a and the substrate 210, and extending to the surface of the substrate 210 in the non-display area NA; along the first direction (shown in the Z direction in the figure), the area where the projection of the second sub-insulating portion 30b overlaps with the substrate 210 is the third sub-insulating portion 30c; the second light-shielding portion 40b is in contact with the surface of the third sub-insulating portion 30c away from the substrate 210.

[0047] Specifically, in combination Figure 7As shown, to prevent the light-shielding layer 40 from directly contacting the substrate 210, the second sub-insulating portion 30b can be extended to a certain distance on the surface of the substrate 210 in the non-display area NA. The second sub-insulating portion 30b covers the sidewall of the film layer between the first sub-insulating portion 30a and the substrate 210, as well as part of the surface of the substrate 210 in the non-display area NA. The second light-shielding portion 40b extends along the Z direction in the figure, covering the sidewall of the second sub-insulating portion 30b, and ends at the surface of the third sub-insulating portion 30c away from the substrate 210. By adding a third sub-insulating portion 30c, direct contact between the second light-shielding portion 40b and the substrate 210 can be avoided, which helps to improve the adhesion of the second light-shielding portion 40b and prevent the light-shielding layer 40 from falling off. By extending the area of ​​the second sub-insulating portion 30b to the substrate 210, the second light-shielding portion 40b can be sunk to the film layer where the active layer 222 is located, thereby wrapping the thin-film transistor TFT of the driving circuit layer 220, blocking the ambient light incident along the non-display area NA, thereby reducing the light leakage of the thin-film transistor TFT, avoiding the flickering problem when the display panel is lit, and improving the display effect of the display panel.

[0048] Figure 8 yes Figure 2 A cross-sectional schematic diagram of another display panel along the AA' direction. One possible implementation, combined with... Figure 2 and Figure 8 As shown, based on the above embodiments, the present invention also provides another display panel, wherein the substrate 210 of the display panel 200 includes a first groove V1, the first groove V1 being located on the side surface of the substrate 210 of the non-display area NA near the light-shielding layer 40; and a third sub-insulating portion 30c being located within the first groove V1.

[0049] Specifically, to further improve the coverage of the light-shielding layer 40 on the active layer 222 and the adhesion between the light-shielding layer 40 and the substrate 210, a groove can be cut on the surface of the substrate 210 in the non-display area NA near the light-shielding layer 40. A first groove V1 is provided on the surface of the substrate 210 in the non-display area NA near the light-shielding layer 40. As an example, the depth of the first groove V1 can be several micrometers. The second sub-insulating portion 30b extends along the Z direction in the figure to the first groove V1 on the surface of the substrate 210 in the non-display area NA and ends there. The second light-shielding portion 40b extends along the Z direction in the figure, covering the sidewall of the second light-shielding portion 40b, and ends at the surface of the third sub-insulating portion 30c away from the substrate 210. By creating a groove on the surface of the substrate 210, the third sub-insulator 30c is cut off within the first groove V1, which improves the adhesion between the third sub-insulator 30c and the substrate 210, prevents the second light-shielding part 40b from falling off, and ensures the structural stability of the light-shielding layer 40. At the same time, due to the groove, the second light-shielding part 40b can be further lowered to below the film layer where the active layer 222 is located, so that the light-shielding layer can fully wrap the thin-film transistor TFT of the driving circuit layer 220, thereby blocking the ambient light incident along the non-display area NA and reducing the light leakage of the thin-film transistor TFT.

[0050] Optional, continue to refer to Figure 8 As shown, the surface of the first groove V1 is a rough surface. This is to improve the adhesion between the third sub-insulator 30c and the substrate 210 and prevent film separation.

[0051] Figure 9 yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction; Figure 10 yes Figure 2 A cross-sectional schematic diagram of another display panel along the AA' direction. One possible implementation, combined with... Figures 6-10 Based on the above embodiments, the present invention also provides a display panel substrate 210 including a plurality of second grooves V2; the plurality of second grooves V2 are located on the side surface of the substrate 210 away from the active layer 222; along the first direction (shown in the Z direction in the figure), the projection of the area where the plurality of second grooves V2 are located covers the active layer 222.

[0052] Specifically, the TFT device location on the lower glass surface of the substrate 210 is roughened by forming multiple second grooves V2 of the same or different shapes and sizes. The shape of the second grooves V2 can be hemispherical, sawtooth, square wave, etc., which are not limited here. By setting multiple grooves below the active layer 22 of the thin film transistor TFT in the driving circuit layer 220, it is beneficial to improve the emission of light emitted downward from the light-emitting element 50 from the lower surface of the substrate 220, and avoid total reflection of light on the surface of the substrate 210 to the channel of the thin film transistor TFT, thereby reducing light leakage.

[0053] Based on the above embodiments, combined with Figures 3-10 As shown, the display panel 200 also includes a protective layer 41, which covers the light-shielding layer 40.

[0054] Specifically, a protective layer 41 is provided to cover and contact the light-shielding layer 40. The protective layer 41 can be a material resistant to the effects of peeling solutions, an inorganic layer, or a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride. It is used to protect the light-shielding layer 40 to prevent problems such as fading failure and film separation.

[0055] It should be noted that, Figures 6-10 In this example, the passivation layer 228 is used as the first insulating layer 30. In other embodiments, other insulating layers in the driving circuit layer 220 can be used to cover the sidewall between it and the substrate 210 to increase the adhesion of the light-shielding layer 40. These will not be shown one by one here.

[0056] Due to over-etching of the connecting electrode 229, protective layer 41, etc., the material of the light-shielding layer 40 between the two electrodes of the light-emitting element 50 sinks as a whole. Its lower film interface is between 230, and its upper film interface is lower than the upper surface of the outer periphery 41 of the light-emitting element 50. Figure 3 , Figures 5-10 As shown; or remove the light-shielding layer 40 between the two electrodes of the light-emitting element 50, leaving only the protective layer 41, as shown. Figure 4 As shown.

[0057] Figure 11 yes Figure 2 A cross-sectional schematic diagram of another type of display panel along the AA' direction; Figure 12 yes Figure 2 A cross-sectional schematic diagram of another display panel along the AA' direction. Based on the above embodiment, combined with... Figure 2 , Figure 11 , Figure 12As shown, taking the display panel 200 as an OLED display panel as an example, the light-shielding layer 40 of the display panel 200 includes a pixel limiting layer, the pixel limiting layer includes multiple pixel openings, and the light-emitting element 50 is located in the pixel openings; along the first direction (shown in the Z direction in the figure), the projection of the light-shielding layer 40 surrounds the light-emitting element 50.

[0058] Specifically, Figure 11 and Figure 12 Taking the passivation layer 228 as the first insulating layer 30 as an example, when preparing the pixel limiting layer of the OLED display panel, a black light-absorbing material or a light-absorbing material is used to dope the pixel limiting layer, so that it surrounds the light-emitting element 50 and extends along the Z direction in the figure to cover the sidewall between the pixel limiting layer and the substrate 210, and covers the second sub-insulating layer 30b, thereby wrapping the thin film transistor TFT in the driving circuit layer 220, thus preventing light from entering the display area AA and reducing the light leakage of the thin film transistor TFT.

[0059] Combination Figures 3-12 As shown, the display panel 200 also includes an encapsulation layer 60, which may include an encapsulating adhesive 61 and a cover plate 62. The encapsulating adhesive 61 covers the substrate 210 and the driving circuit layer 220, and is used to encapsulate the light-emitting element 300. The encapsulating adhesive 61 covers the side surface of the light-emitting element 50, and may also cover the upper surface of the light-emitting element 50. The encapsulation layer 60 of the display panel also includes an adhesive layer 63, which is located between the encapsulating adhesive 61 and the cover plate 62.

[0060] Based on the same inventive concept, embodiments of the present invention also provide a display device. Figure 13 This is a schematic diagram of the structure of the display device provided in an embodiment of the present invention, such as... Figure 13 As shown, the display device includes any of the display panels provided in the above embodiments. For example, such as... Figure 13 As shown, the display device 300 includes a display panel 200. Therefore, this display device also has the beneficial effects of the display panel in the above embodiments. The similarities can be understood with reference to the explanation of the display panel above, and will not be repeated below.

[0061] The display device 300 provided in this embodiment of the invention can be Figure 13 The mobile phone shown can also be any electronic product with display function, including but not limited to the following categories: television, laptop, desktop monitor, tablet computer, digital camera, smart bracelet, smart glasses, in-vehicle display, industrial control equipment, medical display screen, touch interactive terminal, etc. The embodiments of the present invention do not make any special limitations on this.

[0062] Note that the above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments, and substitutions can be made without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and may include many other equivalent embodiments without departing from the concept of the present invention, the scope of which is determined by the scope of the appended claims.

Claims

1. A display panel, characterized in that, It includes a substrate and a driving circuit layer and a light-shielding layer located sequentially on one side of the substrate; The driving circuit layer includes multiple insulating layers, some of which include openings; the insulating layer includes a first insulating layer; the first insulating layer covers the sidewall of the opening. The light-shielding layer covers the first insulating layer at the sidewall of the opening; The first insulating layer is a gate insulating layer, an intermediate dielectric layer, an interlayer dielectric layer, or a passivation layer, and is an inorganic material. It includes a display area and a non-display area, the display area surrounding at least a portion of the non-display area; the non-display area includes the opening; The display area includes an active layer, a first insulating layer, and a plurality of light-emitting elements, which are sequentially located on one side of the substrate. The first insulating layer includes a first sub-insulating portion and a second sub-insulating portion, and the plane of the first sub-insulating portion is parallel to a first plane. The second sub-insulating portion covers at least a portion of the sidewall of a portion of the film layer between the first sub-insulating portion and the substrate. The light-shielding layer includes a first light-shielding portion and a second light-shielding portion; the film layer containing the first light-shielding portion is located between the active layer and the light-emitting element; along a first direction, the first light-shielding portion projects and covers the active layer; the second light-shielding portion covers the second sub-insulating portion; Wherein, the first plane is parallel to the plane where the substrate is located, and the first direction is the thickness direction of the display panel.

2. The display panel according to claim 1, characterized in that, The area corresponding to the opening is the transparent or light-transmitting area of ​​the display panel.

3. The display panel according to claim 1, characterized in that, The display panel further includes an adhesive layer, which is on the same layer as the active layer and extends from the display area to a portion of the non-display area; The second sub-insulating portion covers the sidewall of the film layer between the first sub-insulating portion and the adhesive layer; the second light-shielding portion contacts the surface of the adhesive layer on the side away from the substrate.

4. The display panel according to claim 1, characterized in that, The second sub-insulating portion covers the sidewall of the film layer between the first sub-insulating portion and the substrate, and extends to the surface of the substrate in the non-display area; Along the first direction, the area where the projection of the second sub-insulating portion overlaps with the substrate is the third sub-insulating portion; the second light-shielding portion is in contact with the surface of the third sub-insulating portion on the side away from the substrate.

5. The display panel according to claim 4, characterized in that, The substrate includes a first groove located on the side surface of the substrate in the non-display area near the light-shielding layer; the third sub-insulating portion is located within the first groove.

6. The display panel according to claim 5, characterized in that, The surface of the first groove is a rough surface.

7. The display panel according to claim 1, characterized in that, The substrate includes a plurality of second grooves; the plurality of second grooves are located on the side surface of the substrate away from the active layer; Along the first direction, the projection of the regions where the multiple second grooves are located covers the active layer.

8. The display panel according to claim 1, characterized in that, The light-shielding layer includes a pixel defining layer, the pixel defining layer includes a plurality of pixel openings, and the light-emitting element is located within the pixel openings; Along the first direction, the projection of the light-shielding layer surrounds the projection of the light-emitting element.

9. The display panel according to claim 8, characterized in that, The pixel defining layer comprises a black light-absorbing material.

10. The display panel according to any one of claims 1, characterized in that, The display panel also includes a protective layer that covers the light-shielding layer.

11. A display device, characterized in that, Includes the display panel as described in any one of claims 1-10.

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