一种基于钙钛矿吸光层的光伏器件及其制备方法

By using a barrier sheet to cover the ammonium salt solution during the perovskite annealing process, the problem of easy decomposition of perovskite films was solved, the performance and stability of photovoltaic devices were improved, and high photoelectric conversion efficiency was achieved.

CN115915879BActive Publication Date: 2026-07-17WUHAN UNIV

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
WUHAN UNIV
Filing Date
2022-11-28
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Perovskite thin films are prone to decomposition during the preparation process, resulting in poor performance of photovoltaic devices. Furthermore, existing methods are insufficient to effectively suppress this decomposition, which affects the stability and efficiency of the devices.

Method used

By using a surface-coated barrier film, the volatilization of ammonium salt is prevented during the perovskite annealing process. A high-quality perovskite light-absorbing layer film is formed by spin-coating PbI2 and ammonium salt solution and covering it with the barrier film for annealing.

Benefits of technology

It effectively suppressed the decomposition of perovskite, improved crystallinity, reduced defect state density, and changed conductivity, thereby improving the performance and stability of photovoltaic devices, with a wider bandgap and a lower probability of deep-level defects.

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Abstract

本申请涉及一种基于钙钛矿吸光层的光伏器件及其制备方法,包括如下步骤:在导电衬底上制备二氧化锡传输层;将PbI2溶液旋涂至二氧化锡传输层上,退火至室温,在PbI2上层旋涂铵盐溶液,表面覆盖阻隔片,退火,移除阻隔片,得到钙钛矿吸光层薄膜。本申请提供的制备方法在钙钛矿退火过程中表面覆盖阻隔片,阻隔片通过物理阻隔法有效抑制铵盐挥发,遏制钙钛矿的分解并提高其结晶度,抑制残余碘化铅的形成,从而获得大晶粒高质量与稳定性好的宽带隙p型钙钛矿薄膜,钙钛矿晶粒尺寸最大可增大至20μm左右,载流子寿命延长至683ns,费米能级降低至‑4.86eV,表明钙钛矿导电性能也发生了改变,从偏n型变化至偏p型导电。该方法为制备高性能光伏器件提供了基础。
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