Debouncing solid state switching device

Abstract

The present disclosure provides a de-bounced solid state switching device that includes at least two insulated gate bipolar transistors ("IGBTs") within a parallel architecture. Multiple pairs of IGBTs can be used in a parallel architecture to extend the current carrying capacity and improve the voltage withstand capability. Since the size and complexity of the device is directly dependent on the user's requirements, the device provides improved flexibility and portability to facilitate time and cost efficiency. Furthermore, the procurement of the device components is simple, providing greater accessibility.

Description

Technical Field

[0001] This disclosure generally relates to circuits for switching on and off high AC or DC currents. Specifically, this disclosure provides devices configured to quickly switch on and off high AC or DC currents without producing bounce or chatter. Background Technology

[0002] In many applications that require high power in short periods of time, the ability to quickly switch on and off high AC or DC currents is sought after. For example, the testing of new electrical equipment or the efficient operation of large electrical equipment may require the ability to quickly supply or remove high currents from certain environments.

[0003] Typically, mechanical switches experience contact bounce or chirping as current is rapidly switched on and off, where the switch contacts bounce at least once before providing stable contact. This chirping causes current to pulse instead of providing a full, stable current at the moment the switch is turned on to connect it. Efforts to debounce or eliminate chirping are well-known. Such solutions often involve using mercury, low-pass filters, or testing contact bounce at lower frequencies to determine the point where the contacts are stable and usable without chirping. However, these solutions have their own problems, hazards, and inefficiencies. Summary of the Invention

[0004] This disclosure provides a debouncing solid-state switching device comprising at least two insulated-gate bipolar transistors (“IGBTs”) in a parallel architecture. Multiple pairs of IGBTs can be used in parallel architecture to expand current carrying capacity and improve breakdown voltage. Since the device size and complexity are directly dependent on user requirements, this device offers improved flexibility and portability to facilitate time and cost efficiency. Furthermore, the sourcing of device components is straightforward, providing greater accessibility.

[0005] According to an exemplary embodiment of this disclosure, a switching device is disclosed. The switching device includes at least two modules connected in parallel, each module including: a first connection terminal connected to a circuit path; a second connection terminal communicatively connected to the first connection terminal via the circuit path, the second connection terminal including a first contact; and a switch terminal communicatively connected to the circuit path, the switch terminal including a second contact. The switching device further includes a controller communicatively connected to the switch terminals of each module. The first connection terminals of each module communicatively connect to another first connection terminal of the other module, and the second connection terminals of each module communicatively connect to another second connection terminal of the other module.

[0006] The switching device may further include a rectifier diode located between the first connection terminal and the second connection terminal. The switching device may be configured to switch between an on configuration and an off configuration. The first contact may be configured to selectively contact the switching terminal, and the second contact may be configured to selectively contact the first connection terminal. The switching device may include at least four modules. The switching device may include at least six modules. Each module may be an insulated-gate bipolar transistor.

[0007] According to another embodiment of this disclosure, a switching device is disclosed. The switching device includes: a controller; a first insulated-gate bipolar transistor (IGBT), the first IGBT being connected in communication to the controller and including a first connection terminal and a second connection terminal; and a second IGBT, the second IGBT being connected in communication to the controller and including a first connection terminal and a second connection terminal. The first connection terminal of the first IGBT is connected in communication to the first connection terminal of the second IGBT, and the second connection terminal of the first IGBT is connected in communication to the second connection terminal of the second IGBT.

[0008] The switching device may further include: a third insulated-gate bipolar transistor (IGBT), the third IGBT being connected in communication to the controller and including a first connection terminal and a second connection terminal; and a fourth IGBT, the fourth IGBT being connected in communication to the controller and including a first connection terminal and a second connection terminal. The first connection terminal of each of the first IGBT, the second IGBT, the third IGBT, and the fourth IGBT is connected in communication to each of the other first connection terminals. The second connection terminal of each of the first IGBT, the second IGBT, the third IGBT, and the fourth IGBT is connected in communication to each of the other second connection terminals.

[0009] Each of the first and second insulated-gate bipolar transistors may further include a rectifier diode located between the first and second connection terminals. The second connection terminal may include a contact that selectively connects the second connection terminal to the first connection terminal to close the module circuit. The switching device may have an on-configuration and an off-configuration, in which the module circuit is closed and in which the module circuit is open.

[0010] In another embodiment of this disclosure, a method for providing current is disclosed. The method includes: providing a signal to a switch terminal of a first module, the switch terminal including a first contact; closing the first contact such that the first contact contacts a first connection terminal of the first module; providing a signal to a second connection terminal of the first module, the second connection terminal including a second contact; and closing the second contact such that the second contact contacts the switch terminal. The first connection terminal is communicatively connected to a third connection terminal of a second module, thereby providing current between the first module and the second module. The second connection terminal is communicatively connected to a fourth connection terminal of the second module, thereby providing current between the first module and the second module.

[0011] The signal can be provided by a controller that is connected in communication to the switching terminals of the first module. The first module and the second module may include a parallel architecture.

[0012] Other features and advantages of this disclosure will become apparent to those skilled in the art upon consideration of the following detailed description of exemplary embodiments that exemplify the presently conceived disclosure. Attached Figure Description

[0013] The detailed description of the accompanying drawings refers in particular to the following drawings:

[0014] Figure 1 It is a schematic diagram of a switching device including two insulated gate bipolar transistor modules in an off configuration, arranged in parallel, interconnected via a communication path, and interconnected to a controller configured to place the switching device in an on or off configuration.

[0015] Figure 2 Is with Figure 1 A schematic diagram of another switching device in a turn-off configuration that is substantially similar to the switching device, the switching device also including an additional module;

[0016] Figure 3 Is with Figure 1 and Figure 2 A schematic diagram of another switching device, substantially similar to the one in the switching device, in an off configuration, which also includes an additional module; and

[0017] Figure 4 It is in the conduction configuration. Figure 2 A schematic diagram of the switching device.

[0018] Corresponding reference numerals indicate corresponding parts in several views. Although the drawings illustrate embodiments of various features and components according to this disclosure, the drawings are not necessarily drawn to scale and some features may be exaggerated in order to better illustrate and explain this disclosure. The examples set forth herein illustrate embodiments of the invention, and such examples should not be construed as limiting the scope of the invention in any way. Detailed Implementation

[0019] Reference Figure 1 A switching device 100 is disclosed. The switching device 100 includes a pair of modules 102, such as insulated gate bipolar transistors (“IGBTs”). Each module in the module 102 is a solid-state module with three terminals: a first connection terminal 104 located near the positive terminal 116 of the module 102, a second connection terminal 106 located near the negative terminal 118 of the module 102, and a switching terminal 108 located between the first connection terminal 104 and the second connection terminal 106. The first connection terminal 104 and the second connection terminal 106 are communicatively coupled via a circuit path 124, and the switching terminal 108 is communicatively coupled to the circuit path 124 via a switch bypass 122.

[0020] Modules 102 are arranged in a parallel architecture and connected back-to-back. In other words, the first connection terminal 104a of the first module 102a is connected to the first connection terminal 104b of the second module 102b via the first connection path 126, and the second connection terminal 106a of the first module 102a is connected to the second connection terminal 106b of the second module 102b via the second connection path 128. The first connection terminals 104 of each module 102 are connected to the first connection path 126 via the first terminal path 130, and the second connection terminals 106 of each module 102 are connected to the second connection path 128 via the second terminal path 132.

[0021] The first contact 112 is connected to the switch terminal 108 of each module 102, and the second contact 114 is connected to the second connection terminal 106 of each module 102. When the switching device 100 is in an ON or ON configuration, the first contact 112 selectively contacts the first connection terminal 104 of the corresponding module 102. As further discussed herein, when the switching device 100 is in an ON configuration, almost simultaneously with the first contact 112 contacting the first connection terminal 104, the second contact 114 selectively contacts the switch terminal 108 of the corresponding module 102. Figure 1 As shown, the switching device 100 is in the off configuration.

[0022] Switching device 100 includes a controller 110 communicatively connected to each of a first switching terminal 108a of a first module 102a and a second switching terminal 108b of a second module 102b. The controller 110 is configured to switch switching device 100 from an off or open configuration where no current flows through it to an on configuration where current flows through it, including each of the first module 102a and the second module 102b, as further discussed herein. Each module 102 includes a pair of rectifier diodes 120 to direct current flow when device 100 is in a transition configuration.

[0023] Now refer to Figure 2 Another embodiment of the switching device 200 is shown in an off configuration. The switching device 200 is substantially the same as the switching device 100, except that the switching device 200 includes an additional module 102. For example, Figure 2 This includes modules 102a, 102b, 102c, and 102d. Each module 102 includes components described above. Figure 1 The switching device 100 discussed has the same components as described above, and the operation of the switching device 200 is the same as described above. Figure 1 The switching device 100 discussed is essentially the same and will be described further in this article.

[0024] Similar to switching device 100, the modules 102 of switching device 200 are arranged in a parallel architecture and connected back-to-back. In other words, the first connection terminal 104a of the first module 102a, the first connection terminal 104b of the second module 102b, the first connection terminal 102c of the third module 102c, and the first connection terminal 102d of the fourth module 102d are all connected via connection path 126 to each of the other first connection terminals 104 of the other modules 102. Similarly, the second connection terminals 106a of the first module 102a, the second connection terminal 106b of the second module 102b, the second connection terminal 106c of the third module 102c, and the second connection terminal 106d of the fourth module 102d are all connected via connection path 128 to each of the other second connection terminals 106 of the other modules 102.

[0025] Now refer to Figure 3 Another embodiment of the switching device 300 is shown in an off configuration. The switching device 300 is substantially the same as switching devices 100 and 300, except that the switching device 300 includes an additional module 102. For example, Figure 3 This includes modules 102a, 102b, 102c, 102d, 102e, and 102f. Each module 102 includes components described above. Figure 1 The switching device 100 discussed above and the above regarding Figure 2The same components are described for the switching device 200 discussed, and the operation of the switching device 300 is substantially the same as that of the switching devices 100 and 200, which will be further described herein.

[0026] Similar to switching devices 100 and 200, the modules 102 of switching device 300 are arranged in a parallel architecture and connected back-to-back. In other words, the first connection terminal 104a of the first module 102a, the first connection terminal 104b of the second module 102b, the first connection terminal 104c of the third module 102c, the first connection terminal 104d of the fourth module 102d, the first connection terminal 104e of the fifth module 102e, and the first connection terminal 104f of the sixth module 102f are all connected via connection path 126 to each of the other first connection terminals 104 of the other modules 102.

[0027] Similarly, the second connection terminal 106a of the first module 102a, the second connection terminal 106b of the second module 102b, the second connection terminal 106c of the third module 102c, the second connection terminal 106d of the fourth module 102d, the second connection terminal 106e of the fifth module 102e, and the second connection terminal 106f of the sixth module 102f are all connected in communication with each of the other second connection terminals 106 of the other modules 102 via the connection path 128.

[0028] like Figure 2 and Figure 3 As shown, the switching device may include the number of modules 102 required to perform the desired function of the switching device. As the number of modules 102 increases, the current carrying capacity and withstand voltage capability of the switching device 100 increase. The switching device may include, for example, at least 2 modules 102, at least 4 modules 102, at least 6 modules 102, at least 8 modules 102, at least 10 modules 102, at least 12 modules 102, etc., until the desired current carrying capacity and / or withstand voltage capability of the switching device is achieved.

[0029] Figure 4 An example of the on / off configuration of switching device 200 is illustrated, which is substantially the same as the on configuration of switching devices 100, 300, and other switching devices described herein. As described above, in the on configuration, contact 112 contacts the first connection terminal 104 and contact 114 contacts the switch terminal 108. The contacts between contact 112 and the first connection terminal 104, and between contact 114 and the switch terminal 108, complete the module circuitry within module 102 to allow current to flow within and between modules 102, as further discussed herein.

[0030] Controller 110 is configured to switch device 200 to an ON configuration via closing contacts 112 and 114. As shown, controller 110 is interconnected to the switching terminals 108 of each module 102. When device 200 is switched to the ON configuration, controller 110 provides a signal to each switching terminal 108 to close contact 112. When contact 112 contacts the first connection terminal 104, current flows through circuit path 124 until it reaches the second connection terminal 106, triggering contact 114 to close to shut down the module circuit. The current flow causes the closure of contacts 112 and 114 to be almost simultaneous when controller 110 provides the signal. A switch bypass path 122 can be provided from the switch terminal 108 to the circuit path 124 between the first connection terminal 104 and the second connection terminal 106 to provide a faster connection from the switch terminal 108 to the second connection terminal 106, thereby facilitating the rapid closing of the contact 114. That is, the controller sends a signal to the switch terminal 108 to close the contact 112, and the signal continues via the bypass path 122 and the circuit path 124 to close the contact 114 and complete the module circuit.

[0031] Current further flows from the first connection terminal 104 through the first terminal passage 130 to the first connection passage 126, causing current to flow between the first connection terminals 104 of each module 102. Current also flows through the second terminal passage 132 between the second connection terminals 106 and the second connection passage 128, causing current to flow between the second connection terminals 106 of each module 102. The current flow between the modules 102 completes the circuit arrangement of the device 200.

[0032] As described above, each module 102 includes a pair of rectifier diodes 120 to guide the flow of current. Exemplarily, module 102 includes two rectifier diodes 120, namely a natural body diode 120a and a parallel diode 120b, wherein the parallel diode 120b helps improve the performance of module 102. In other embodiments, only the natural body diode 120a may be present. The diode 120 is positioned along circuit path 124 between the first connection terminal 104 and the second connection terminal 106 to prevent current backflow. In other words, the diode 120 is positioned along circuit path 124 between the first terminal path 130 and the second terminal path 132.

[0033] Diode 120 indicates the direction of current within each module 102. In some modules 102 (e.g., modules 102a and 102c), the current flows along... Figure 4 The diode shape shown indicates that current flows in the forward direction. In other modules 102 (e.g., modules 102b and 102d), current flows along the direction indicated by... Figure 4The diode shape shown indicates the reverse flow direction. As long as controller 110 places device 200 in the ON configuration, current will flow in either the ON or OFF direction indicated by diode 120. When controller 110 is switched to place device 200 in the OFF configuration, contact 112 is removed from first connection terminal 104 and contact 114 is removed from switch terminal 108 to “disconnect” the current, thereby placing device 200 in the ON configuration as described above. Figure 2 The shutdown configuration shown and described.

[0034] Although the invention has been described with reference to various specific embodiments, it should be understood that many changes can be made within the spirit and scope of the described inventive concept. Therefore, the invention is not limited to the described embodiments, but will have the full scope defined by the language of the appended claims.

Claims

1. A switching device, the switching device comprising: Controller; A first insulated-gate bipolar transistor (IGBT) is connected in communication to the controller and includes a first connection terminal and a second connection terminal. The second connection terminal includes a second contact that selectively connects the second connection terminal of the first IGBT to the first connection terminal of the first IGBT to close the module circuit of the first IGBT. A second insulated-gate bipolar transistor (IGBT) is connected in communication to the controller and includes a first connection terminal and a second connection terminal. The second connection terminal of the IGBT includes a second contact that selectively connects the second connection terminal of the IGBT to the first connection terminal of the IGBT to close the module circuit of the IGBT. A third insulated-gate bipolar transistor, the third insulated-gate bipolar transistor being connected in communication to the controller and including a first connection terminal and a second connection terminal; as well as A fourth insulated-gate bipolar transistor, the fourth insulated-gate bipolar transistor being connected in communication to the controller and including a first connection terminal and a second connection terminal; Wherein, the first connection terminal of the first insulated-gate bipolar transistor is connected in a common manner to the first connection terminal of the second insulated-gate bipolar transistor, and the second connection terminal of the first insulated-gate bipolar transistor is connected in a common manner to the second connection terminal of the second insulated-gate bipolar transistor; and The second connection terminal of the third insulated-gate bipolar transistor includes a second contact, which connects the second connection terminal of the third insulated-gate bipolar transistor to the first connection terminal of the third insulated-gate bipolar transistor to close the module circuit of the third insulated-gate bipolar transistor; and The second connection terminal of the fourth insulated gate bipolar transistor includes a second contact, which connects the second connection terminal of the fourth insulated gate bipolar transistor to the first connection terminal of the fourth insulated gate bipolar transistor to close the module circuit of the fourth insulated gate bipolar transistor.

2. The switching device according to claim 1, wherein each of the first insulated-gate bipolar transistor and the second insulated-gate bipolar transistor further comprises a rectifier diode located between the first connection terminal and the second connection terminal.

3. The switching device according to claim 1, in, The first connection terminal of each of the first insulated-gate bipolar transistor, the second insulated-gate bipolar transistor, the third insulated-gate bipolar transistor, and the fourth insulated-gate bipolar transistor is connected in communication to each of the other first connection terminals; and The second connection terminal of each of the first insulated gate bipolar transistor, the second insulated gate bipolar transistor, the third insulated gate bipolar transistor, and the fourth insulated gate bipolar transistor is connected in communication to each of the other second connection terminals.

4. The switching device according to claim 1, wherein, The switching device is configured to switch between an on configuration and an off configuration.

5. The switching device according to claim 4, wherein, In the on configuration, the module circuits of the first insulated-gate bipolar transistor (IGBT), the second insulated-gate bipolar transistor (IGBT), the third insulated-gate bipolar transistor (IGBT), and the fourth insulated-gate bipolar transistor (IGBT) are closed; in the off configuration, the module circuits of the first IGBT, the second IGBT, the third IGBT, and the fourth IGBT are open.

6. The switching device according to claim 1, wherein, Each of the first insulated-gate bipolar transistor and the second insulated-gate bipolar transistor includes: A switch terminal is connected in communication with the controller and the module circuit, and the switch terminal includes a first contact.

7. The switching device according to claim 6, wherein, The second contact of the first insulated gate bipolar transistor is configured to selectively contact the switching terminal of the first insulated gate bipolar transistor, and the first contact of the switching terminal of the first insulated gate bipolar transistor is configured to selectively contact the first connection terminal of the first insulated gate bipolar transistor.

8. The switching device according to claim 1, wherein, The switching device includes at least six insulated-gate bipolar transistors.

9. The switching device according to claim 1, wherein, The first insulated-gate bipolar transistor and the second insulated-gate bipolar transistor form a parallel architecture.

10. A method for providing current using the switching device according to claim 7, the method comprising: Provide a first signal to the switching terminal of the first insulated gate bipolar transistor; Close the first contact of the switching terminal of the first insulated gate bipolar transistor, so that the first contact of the switching terminal of the first insulated gate bipolar transistor contacts the first connection terminal of the first insulated gate bipolar transistor. A second signal is provided to the second connection terminal of the first insulated gate bipolar transistor; Close the second contact of the second connection terminal of the first insulated gate bipolar transistor, so that the second contact of the second connection terminal of the first insulated gate bipolar transistor contacts the switching terminal of the first insulated gate bipolar transistor.

11. The method according to claim 10, wherein, Both the first signal and the second signal are provided by the controller.

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