A method, apparatus, device and storage medium for monitoring plasma collision intensity

Abstract

The present disclosure provides a kind of plasma collision intensity monitoring method, device, equipment and storage medium, it is related to the field of semiconductor technology.The method mainly includes: obtaining the historical production data and current trial production data of process cavity, current trial production data includes current trial production ion signal intensity;According to historical production data and current trial production ion signal intensity, the ion signal intensity range corresponding to current maintenance cycle is calculated;The current ion signal intensity of process cavity in current maintenance cycle monitored in formal production process is compared with the ion signal intensity range corresponding to current maintenance cycle, and the monitoring result of the plasma collision intensity of process cavity is obtained.The present disclosure provides a kind of plasma collision intensity monitoring method, device, equipment and storage medium, the current ion signal intensity of process cavity in formal production process can be monitored in real time, and alarm information can be sent when the current ion signal intensity does not meet the ion signal intensity range.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and in particular to a method, apparatus, device and storage medium for monitoring plasma collision intensity. Background Technology

[0002] During chip manufacturing, dielectric layer etching is required. As the etching depth of contact holes increases during this process, etching termination (also known as contact opening) may occur. Typically, with the dielectric etching rate and uniformity remaining constant, changes in plasma impact intensity within the process cavity have little impact on areas with relatively small etching aspect ratios, but a greater impact on areas with relatively large aspect ratios, potentially leading to etching termination and leakage current at the wafer edges.

[0003] There is currently no solution in the industry to address the problem of etching termination caused by changes in the plasma collision intensity in the process chamber. Summary of the Invention

[0004] This disclosure provides a method, apparatus, device, and storage medium for monitoring plasma collision intensity, in order to at least solve the above-mentioned technical problems existing in the prior art.

[0005] According to a first aspect of this disclosure, a method for monitoring plasma collision intensity is provided. The method includes: acquiring historical production data and current trial production data of a process chamber, wherein the current trial production data includes the current trial production ion signal intensity; calculating the ion signal intensity range corresponding to the current maintenance cycle based on the historical production data and the current trial production ion signal intensity; and comparing the current ion signal intensity of the process chamber within the current maintenance cycle, which is monitored during formal production, with the ion signal intensity range corresponding to the current maintenance cycle to obtain a monitoring result of the plasma collision intensity of the process chamber.

[0006] In one possible implementation, calculating the ion signal intensity range corresponding to the current maintenance cycle based on the historical production data and the current trial production ion signal intensity includes: calculating a second signal fluctuation range for the current maintenance cycle based on a first signal fluctuation range in the historical production data; calculating a target signal intensity value for the current maintenance cycle based on the current trial production ion signal intensity, the average signal intensity in the historical production data, and the historical trial production ion signal intensity; and calculating the ion signal intensity range corresponding to the current maintenance cycle based on the second signal fluctuation range and the target signal intensity value.

[0007] In one possible implementation, the second signal fluctuation range is calculated according to the following formula: Range = ax1 + bx2 + cx3 + ... + mxn Where Range is the fluctuation range of the second signal, a, b, c, and m are the weights corresponding to the previous n maintenance cycles of the current maintenance cycle, and x1, x2, x3, x4, x5, x6, x7, x8, x9, x1, x1, x2, x1, x2, x3, x4, x9, x1, x1, x2 ...1, x1, x9, x1, x1, x1, n These represent the fluctuation range of the first signal corresponding to the nth maintenance cycle of the current maintenance cycle.

[0008] In one possible implementation, the step of calculating the target signal strength value for the current maintenance cycle based on the current trial production ion signal strength, the average signal strength in the historical production data, and the historical trial production ion signal strength includes: calculating the difference between the average signal strength and the historical trial production ion signal strength; and calculating the target signal strength value based on the current trial production ion signal strength and the difference.

[0009] In one possible implementation, the target signal strength value is calculated according to the following formula: Target = A + ay1 + by2 + cy3 + ... + my n Where Target is the target signal strength value, A is the current trial production ion signal strength, a, b, c, and m are the weights corresponding to the first n maintenance cycles of the current maintenance cycle, and y1, y2, y3, y4, y5, y6, y7, y8, y9, ... n These are the differences between the average signal intensity of the previous n maintenance cycles and the historical ion signal intensity during trial production, respectively.

[0010] In one possible implementation, the current trial production data includes the process parameters of the current trial production wafer. Before comparing the current ion signal intensity of the process cavity within the current maintenance cycle, which is monitored during the formal production process, with the ion signal intensity range corresponding to the current maintenance cycle to obtain the monitoring result of the plasma collision intensity of the process cavity, the method further includes: performing failure analysis on the current trial production wafer based on the process parameters to obtain analysis results; when the analysis results indicate that the current trial production wafer has etch termination, sending a first alarm message for an abnormal current maintenance cycle.

[0011] In one possible implementation, the step of comparing the current ion signal intensity of the process chamber within the current maintenance cycle, obtained during formal production, with the ion signal intensity range corresponding to the current maintenance cycle, to obtain the monitoring result of the plasma collision intensity of the process chamber includes: determining whether the current ion signal intensity meets the ion signal intensity range, and obtaining a determination result; if the determination result is yes, then the plasma collision intensity is normal; if the determination result is no, then the plasma collision intensity is abnormal, and a second alarm message indicating abnormal plasma collision intensity is issued.

[0012] According to a second aspect of this disclosure, a plasma collision intensity monitoring device is provided. The device includes: an acquisition module for acquiring historical production data and current trial production data of a process chamber, wherein the current trial production data includes the current trial production ion signal intensity; a calculation module for calculating the ion signal intensity range corresponding to the current maintenance cycle based on the historical production data and the current trial production ion signal intensity; and a monitoring module for comparing the current ion signal intensity of the process chamber within the current maintenance cycle, obtained during formal production, with the ion signal intensity range corresponding to the current maintenance cycle, to obtain the monitoring result of the plasma collision intensity of the process chamber.

[0013] According to a third aspect of this disclosure, an electronic device is provided, comprising:

[0014] At least one processor; and

[0015] A memory communicatively connected to the at least one processor; wherein,

[0016] The memory stores instructions that can be executed by the at least one processor to enable the at least one processor to perform the methods described in this disclosure.

[0017] According to a fourth aspect of this disclosure, a non-transitory computer-readable storage medium is provided storing computer instructions for causing the computer to perform the methods described in this disclosure.

[0018] This disclosure discloses a method, apparatus, equipment, and storage medium for monitoring plasma collision intensity. First, it acquires historical production data and current trial production data of the process cavity. Then, based on the current trial production ion signal intensity from the historical and current trial production data, it calculates the ion signal intensity range corresponding to the current maintenance cycle. Finally, it compares the current ion signal intensity of the process cavity within the current maintenance cycle, obtained during formal production, with the corresponding ion signal intensity range to obtain the monitoring result of the plasma collision intensity of the process cavity. Therefore, it allows for real-time monitoring of the current ion signal intensity (i.e., the plasma collision intensity of the process cavity) during formal production. Furthermore, it can issue an alarm when the current ion signal intensity does not meet the ion signal intensity range. Operators can then stop production based on the alarm and re-maintain the process cavity, thereby avoiding etching termination due to changes in the plasma collision intensity of the process cavity.

[0019] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of this disclosure, nor is it intended to limit the scope of this disclosure. Other features of this disclosure will become readily apparent from the following description. Attached Figure Description

[0020] The above and other objects, features, and advantages of this disclosure will become readily apparent from the following detailed description of exemplary embodiments, taken in conjunction with the accompanying drawings. Several embodiments of this disclosure are illustrated in the drawings by way of example and not limitation, in which:

[0021] In the accompanying drawings, the same or corresponding reference numerals indicate the same or corresponding parts.

[0022] Figure 1 A schematic flowchart of a plasma collision intensity monitoring method according to a first embodiment of the present disclosure is shown;

[0023] Figure 2 A schematic flowchart of a plasma collision intensity monitoring method according to a second embodiment of the present disclosure is shown;

[0024] Figure 3 A schematic flowchart of a plasma collision intensity monitoring method according to a third embodiment of this disclosure is shown;

[0025] Figure 4 A schematic diagram of the structure of a plasma collision intensity monitoring device according to the sixth embodiment of this disclosure is shown;

[0026] Figure 5 A schematic diagram of the composition structure of an electronic device according to an embodiment of the present disclosure is shown. Detailed Implementation

[0027] To make the objectives, features, and advantages of this disclosure more apparent and understandable, the technical solutions in the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this disclosure, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this disclosure without creative effort are within the scope of protection of this disclosure.

[0028] Figure 1 A schematic flowchart of a plasma collision intensity monitoring method according to a first embodiment of this disclosure is shown, as follows: Figure 1 As shown, the method mainly includes:

[0029] Step S101: Obtain historical production data and current trial production data of the process chamber, wherein the current trial production data includes the current trial production ion signal intensity.

[0030] In this embodiment, historical production data and current trial production data of the process cavity are first acquired. The historical production data includes the ion signal intensity during the historical maintenance cycle of the process cavity, and the ion signal intensity is the plasma collision intensity. The current trial production data is the data generated by the trial production wafer during the current maintenance cycle of the process cavity, including the current trial production ion signal intensity, the current trial production wafer linewidth, and the current trial production wafer depth, etc.

[0031] In one embodiment, a signal strength sensor can be installed in the process chamber to monitor the ion signal intensity of the process chamber in each historical maintenance cycle and store the monitored ion signal intensity to obtain historical production data of the process chamber; when the process chamber is in trial production in the current maintenance cycle, the same signal strength sensor is used to monitor the ion signal intensity of the current trial production.

[0032] Step S102: Calculate the ion signal intensity range corresponding to the current maintenance cycle based on the historical production data and the current trial production ion signal intensity.

[0033] In this embodiment, the ion signal intensity of each historical maintenance cycle in the historical production data can reflect the ion signal intensity of the current maintenance cycle. For example, the average value of the ion signal intensity of each historical maintenance cycle can be used to predict the ion signal intensity of the current maintenance cycle. Therefore, after obtaining the historical production data and the current trial production data, the range of ion signal intensity corresponding to the current maintenance cycle can be calculated based on the current trial production ion signal intensity in the historical production data and the current trial production data.

[0034] In one implementation, after acquiring historical production data, the signal fluctuation range of each historical maintenance cycle can be determined based on the upper and lower limits of the signal strength in the historical production data. Then, the signal fluctuation range of the current maintenance cycle is determined based on the average of the signal fluctuation ranges of each historical maintenance cycle. Finally, the ion signal intensity range corresponding to the current maintenance cycle is determined based on the signal fluctuation range of the current maintenance cycle and the current trial production ion signal intensity. Specifically, if the signal fluctuation range of the current maintenance cycle is n and the current trial production ion signal intensity is m, then the ion signal intensity range corresponding to the current maintenance cycle can be determined as follows:

[0035] Step S103: The current ion signal intensity of the process chamber within the current maintenance cycle, which is monitored during the formal production process, is compared with the ion signal intensity range corresponding to the current maintenance cycle to obtain the monitoring result of the plasma collision intensity of the process chamber.

[0036] In this embodiment, during formal production within the current maintenance cycle of the process chamber, the current ion signal intensity of the process chamber can be monitored in real time, and compared with the ion signal intensity range corresponding to the current maintenance cycle to obtain the monitoring result of the plasma collision intensity of the process chamber. Specifically, if the current ion signal intensity is within the ion signal intensity range, the monitoring result can show that the plasma collision intensity is normal; if the current ion signal intensity is not within the ion signal intensity range, the monitoring result can show that the plasma collision intensity is abnormal.

[0037] In the first embodiment of this disclosure, historical production data and current trial production data of the process cavity are first acquired. Then, based on the current trial production ion signal intensity in the historical production data and the current trial production data, the ion signal intensity range corresponding to the current maintenance cycle is calculated. The current ion signal intensity of the process cavity within the current maintenance cycle, as monitored during formal production, is compared with the ion signal intensity range corresponding to the current maintenance cycle to obtain the monitoring result of the plasma collision intensity of the process cavity. Therefore, the current ion signal intensity of the process cavity can be monitored in real time during formal production, and the monitoring results can be obtained. Based on the monitoring results, operators can determine whether the plasma collision intensity of the process cavity is normal, thereby avoiding etching termination due to changes in the plasma collision intensity of the process cavity.

[0038] Figure 2 A schematic flowchart of a plasma collision intensity monitoring method according to a second embodiment of this disclosure is shown, as follows: Figure 2 As shown, step S102 mainly includes:

[0039] Step S201: Calculate the second signal fluctuation range of the current maintenance cycle based on the first signal fluctuation range in the historical production data.

[0040] In this embodiment, the second signal fluctuation range of the current maintenance cycle is first calculated based on the first signal fluctuation range in historical production data. The first signal fluctuation range is the difference between the upper limit and the lower limit of the ion signal intensity in each historical production cycle. The ion signal intensities in each historical production cycle in the historical production data are shown in Table 1 below:

[0041] Table 1

[0042]

[0043]

[0044] According to Table 1, the fluctuation range of the first signal in the historical maintenance cycles 1, 2, 3, and 4 is 2000.

[0045] In one possible implementation, the fluctuation range of the second signal can be calculated according to the following formula:

[0046] Range = ax1 + bx2 + cx3 + ... + mx n ,

[0047] Where Range represents the fluctuation range of the second signal, a, b, c, and m are the weights corresponding to the previous n maintenance cycles of the current maintenance cycle, and x1, x2, x3, x4, x5, x6, x7, x8, x9, x1, x1, x2, x1, x2, x3, x9, x1, x1, x2, x1, x1, x2, x9, x1, x1, x1, x2, x1, x1, x1, n These represent the fluctuation range of the first signal corresponding to the nth maintenance cycle of the current maintenance cycle.

[0048] In one implementation, the weights corresponding to the first n maintenance cycles of the current maintenance cycle can be set according to the quality of the wafers produced. For example, the first 4 maintenance cycles of the current maintenance cycle can be taken as historical maintenance cycles 1, 2, 3, and 4. If the wafer yield produced in historical maintenance cycle 1 is higher, then historical maintenance cycle 1 is given a higher weight; if the wafer yield produced in historical maintenance cycle 3 is lower, then historical maintenance cycle 1 is given a lower weight, and so on.

[0049] Step S202: Calculate the target signal strength value for the current maintenance cycle based on the current trial production ion signal strength, the average signal strength in the historical production data, and the historical trial production ion signal strength.

[0050] In this embodiment, it is also necessary to calculate the target value of the signal strength for the current maintenance cycle based on the current trial production ion signal strength, the average signal strength in historical production data, and the historical trial production ion signal strength. The average signal strength is the average value of the ion signal strength during the production process in each historical maintenance cycle. As shown in Table 1, the average signal strengths for historical maintenance cycles 1, 2, 3, and 4 are 6500, 6700, 6600, and 6800, respectively. The historical trial production ion signal strength is the ion signal strength generated during trial production in each historical maintenance cycle.

[0051] In one possible implementation, the correspondence between the average signal strength in each historical maintenance cycle and the historical trial production ion signal strength can be determined first. For example, the multiple relationship or difference between the average signal strength in each historical maintenance cycle and the historical trial production ion signal strength can be determined. This correspondence can then be used as the correspondence between the target signal strength value of the current maintenance cycle and the current trial production ion signal strength. Based on this correspondence and the current trial production ion signal strength, the target signal strength value of the current maintenance cycle can be calculated.

[0052] Step S203: Calculate the ion signal intensity range corresponding to the current maintenance cycle based on the second signal fluctuation range and the signal intensity target value.

[0053] In this embodiment, based on the second signal fluctuation range and the target signal strength value of the current maintenance cycle, the ion signal strength range corresponding to the current maintenance cycle can be calculated. The target signal strength value is the standard target value that the ion signal strength should reach, and the second signal fluctuation range is the range of fluctuation of the ion signal strength around the target signal strength value. Specifically, if the second signal fluctuation range is p and the target signal strength value is q, then the ion signal strength range corresponding to the current maintenance cycle can be determined as follows:

[0054] In the second embodiment of this disclosure, the accurate ion signal intensity range of the current maintenance cycle is calculated based on the ion signal intensity in the historical maintenance cycles, so as to facilitate the subsequent monitoring of the current ion signal intensity during the formal production process of the current maintenance cycle based on the ion signal intensity range.

[0055] Figure 3 A schematic flowchart of a plasma collision intensity monitoring method according to a third embodiment of this disclosure is shown, as follows: Figure 3 As shown, step S202 mainly includes:

[0056] Calculate the difference between the average signal strength and the historical trial production ion signal strength; calculate the target signal strength value based on the current trial production ion signal strength and the difference.

[0057] In this embodiment, the difference between the average signal strength in historical production data and the historical trial production ion signal strength is first calculated. This difference can characterize the correspondence between the average signal strength and the historical trial production ion signal strength. Then, based on the current trial production ion signal strength and the difference, the target signal strength value for the current maintenance cycle is calculated.

[0058] In one possible implementation, the target signal strength value can be calculated according to the following formula:

[0059] Targey = A + ay1 + by2 + cy3 + ... + my n ,

[0060] Where Target is the target signal strength value, A is the current trial production ion signal strength, a, b, c, and m are the weights corresponding to the first n maintenance cycles of the current maintenance cycle, and y1, y2, y3, y4, y5, y6, y7, y8, y9, y1, y2, y3, y4 ...5, y6, n These are the differences between the average signal intensity of the previous n maintenance cycles and the historical ion signal intensity during trial production, respectively.

[0061] In the fourth embodiment of this disclosure, the current pilot production data includes the process parameters of the current pilot production wafer. Before step S103, the method further includes:

[0062] Based on the process parameters, a failure analysis is performed on the current trial production wafer to obtain the analysis results; the analysis results indicate that when the current trial production wafer has an etching termination, a first alarm message for an abnormal current maintenance cycle is sent.

[0063] In this embodiment, the process parameters of the current pilot production wafer include the linewidth, depth, and grain condition. Based on these parameters, failure analysis can be performed on the current pilot production wafer to determine if etching termination exists. If the analysis indicates etching termination, a first alarm message for an abnormal current maintenance cycle is sent. Specifically, if etching termination is present, it indicates an abnormal current maintenance cycle for the process chamber. Based on this alarm message, production can be stopped and the process chamber re-maintained. Formal production is not initiated immediately, thus reducing the scrap rate.

[0064] In one embodiment, standard process parameters for the wafer can be stored in advance. When performing failure analysis on the current trial production wafer, the process parameters of the current trial production wafer are compared with the standard process parameters. If the comparison results show that the process parameters of the current trial production wafer do not meet the standard process parameters, it can be considered that the current trial production wafer has etch termination.

[0065] In the fifth embodiment of this disclosure, step S103 mainly includes:

[0066] Determine whether the current ion signal intensity meets the ion signal intensity range, and obtain a determination result; if the determination result is yes, the plasma collision intensity is normal; if the determination result is no, the plasma collision intensity is abnormal, and a second alarm message for the abnormal plasma collision intensity is issued.

[0067] In this embodiment, it is first necessary to determine whether the current ion signal intensity in the formal production process meets the ion signal intensity range. If the determination result is yes, the plasma collision intensity is normal; if the determination result is no, the plasma collision intensity is abnormal, and a second alarm message for abnormal plasma collision intensity is issued. The staff can stop production according to the second alarm message and re-maintain the process chamber to avoid etching termination caused by changes in the plasma collision intensity of the process chamber.

[0068] Figure 4 A schematic diagram of the structure of a plasma collision intensity monitoring device according to the sixth embodiment of this disclosure is shown, as follows: Figure 4 As shown, the device mainly includes:

[0069] The acquisition module 10 is used to acquire historical production data and current trial production data of the process chamber, wherein the current trial production data includes the current trial production ion signal intensity; the calculation module 11 is used to calculate the ion signal intensity range corresponding to the current maintenance cycle based on the historical production data and the current trial production ion signal intensity; the monitoring module 12 is used to compare the current ion signal intensity of the process chamber within the current maintenance cycle obtained during formal production with the ion signal intensity range corresponding to the current maintenance cycle to obtain the monitoring result of the plasma collision intensity of the process chamber.

[0070] In one embodiment, the calculation module 11 mainly includes: a first calculation submodule, used to calculate a second signal fluctuation range for the current maintenance cycle based on a first signal fluctuation range in the historical production data; a second calculation submodule, used to calculate a target signal strength value for the current maintenance cycle based on the current trial production ion signal strength, the average signal strength in the historical production data, and the historical trial production ion signal strength; and a third calculation submodule, used to calculate the ion signal strength range corresponding to the current maintenance cycle based on the second signal fluctuation range and the target signal strength value.

[0071] In one embodiment, the first calculation submodule is further configured to calculate the second signal fluctuation range according to the following formula: Range=ax1+bx2+cx3+…+mx n Where Range is the fluctuation range of the second signal, a, b, c, and m are the weights corresponding to the previous n maintenance cycles of the current maintenance cycle, and x1, x2, x3, x4, x5, x6, x7, x8, x9, x1, x1, x2, x1, x2, x3, x4, x9, x1, x1, x2 ...1, x1, x9, x1, x1, x1, n These represent the fluctuation range of the first signal corresponding to the nth maintenance cycle of the current maintenance cycle.

[0072] In one possible implementation, the second calculation submodule mainly includes: a first calculation unit, used to calculate the difference between the average signal strength and the historical trial production ion signal strength; and a second calculation unit, used to calculate the target signal strength value based on the current trial production ion signal strength and the difference.

[0073] In one embodiment, the second calculation unit is further configured to calculate the target signal strength value according to the following formula: Target = A + ay1 + by2 + cy3 + ... + my n Where Target is the target signal strength value, A is the current trial production ion signal strength, a, b, c, and m are the weights corresponding to the first n maintenance cycles of the current maintenance cycle, and y1, y2, y3, y4, y5, y6, y7, y8, y9, ... n These are the differences between the average signal intensity of the previous n maintenance cycles and the historical ion signal intensity during trial production, respectively.

[0074] In one embodiment, the device further includes: a failure analysis module, used to perform failure analysis on the current trial production wafer according to the process parameters and obtain analysis results; and an alarm module, used to send a first alarm message of current maintenance cycle abnormality when the analysis results indicate that the current trial production wafer has etch termination.

[0075] In one embodiment, the monitoring module 12 is further configured to: determine whether the current ion signal intensity meets the ion signal intensity range, and obtain a determination result; if the determination result is yes, then the plasma collision intensity is normal; if the determination result is no, then the plasma collision intensity is abnormal, and a second alarm message for the abnormal plasma collision intensity is issued.

[0076] According to embodiments of this disclosure, this disclosure also provides an electronic device and a readable storage medium.

[0077] Figure 5 A schematic block diagram of an example electronic device 500 that can be used to implement embodiments of the present disclosure is shown. The electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device may also represent various forms of mobile devices, such as personal digital processors, cellular phones, smartphones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the present disclosure described and / or claimed herein.

[0078] like Figure 5 As shown, device 500 includes a computing unit 501, which can perform various appropriate actions and processes based on a computer program stored in read-only memory (ROM) 502 or a computer program loaded from storage unit 508 into random access memory (RAM) 503. RAM 503 may also store various programs and data required for the operation of device 500. The computing unit 501, ROM 502, and RAM 503 are interconnected via bus 504. Input / output (I / O) interface 505 is also connected to bus 504.

[0079] Multiple components in device 500 are connected to I / O interface 505, including: input unit 506, such as keyboard, mouse, etc.; output unit 507, such as various types of monitors, speakers, etc.; storage unit 508, such as disk, optical disk, etc.; and communication unit 509, such as network card, modem, wireless transceiver, etc. Communication unit 509 allows device 500 to exchange information / data with other devices through computer networks such as the Internet and / or various telecommunications networks.

[0080] The computing unit 501 can be a variety of general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of the computing unit 501 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special-purpose artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. The computing unit 501 performs the various methods and processes described above, such as a plasma impact intensity monitoring method. For example, in some embodiments, a plasma impact intensity monitoring method can be implemented as a computer software program tangibly contained in a machine-readable medium, such as storage unit 508. In some embodiments, part or all of the computer program can be loaded and / or installed on device 500 via ROM 502 and / or communication unit 509. When the computer program is loaded into RAM 503 and executed by the computing unit 501, one or more steps of the plasma impact intensity monitoring method described above can be performed. Alternatively, in other embodiments, the computing unit 501 may be configured to perform a plasma impact intensity monitoring method by any other suitable means (e.g., by means of firmware).

[0081] Various embodiments of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), application-specific standard products (ASSPs), systems-on-a-chip (SoCs), payload-programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various embodiments may include implementations in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which may be a dedicated or general-purpose programmable processor, capable of receiving data and instructions from a storage system, at least one input device, and at least one output device, and transmitting data and instructions to the storage system, the at least one input device, and the at least one output device.

[0082] The program code used to implement the methods of this disclosure may be written in any combination of one or more programming languages. This program code may be provided to a processor or controller of a general-purpose computer, special-purpose computer, or other programmable data processing apparatus, such that when executed by the processor or controller, the program code causes the functions / operations specified in the flowcharts and / or block diagrams to be implemented. The program code may be executed entirely on a machine, partially on a machine, as a standalone software package partially on a machine and partially on a remote machine, or entirely on a remote machine or server.

[0083] In the context of this disclosure, a machine-readable medium can be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, apparatus, or device. A machine-readable medium can be a machine-readable signal medium or a machine-readable storage medium. A machine-readable medium can be, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.

[0084] To provide interaction with a user, the systems and techniques described herein can be implemented on a computer having: a display device for displaying information to the user (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor); and a keyboard and pointing device (e.g., a mouse or trackball) through which the user provides input to the computer. Other types of devices can also be used to provide interaction with the user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including sound input, voice input, or tactile input).

[0085] The systems and technologies described herein can be implemented in computing systems that include backend components (e.g., as a data server), or computing systems that include middleware components (e.g., an application server), or computing systems that include frontend components (e.g., a user computer with a graphical user interface or web browser through which a user can interact with embodiments of the systems and technologies described herein), or any combination of such backend, middleware, or frontend components. The components of the system can be interconnected via digital data communication of any form or medium (e.g., a communication network). Examples of communication networks include local area networks (LANs), wide area networks (WANs), and the Internet.

[0086] Computer systems can include clients and servers. Clients and servers are generally located far apart and typically interact via communication networks. Client-server relationships are created by computer programs running on the respective computers and having a client-server relationship with each other. Servers can be cloud servers, servers in distributed systems, or servers incorporating blockchain technology.

[0087] It should be understood that the various forms of processes shown above can be used to rearrange, add, or delete steps. For example, the steps described in this disclosure can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution disclosed in this disclosure can be achieved, and this is not limited herein.

[0088] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this disclosure, "a plurality of" means two or more, unless otherwise explicitly specified.

[0089] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A method for monitoring plasma collision intensity, characterized in that, The method includes: Acquire historical production data and current trial production data of the process chamber, wherein the current trial production data includes the current trial production ion signal intensity; Based on the historical production data and the current trial production ion signal intensity, calculate the ion signal intensity range corresponding to the current maintenance cycle; The current ion signal intensity of the process chamber within the current maintenance cycle, as monitored during formal production, is compared with the ion signal intensity range corresponding to the current maintenance cycle to obtain the monitoring result of the plasma collision intensity of the process chamber. Based on the historical production data and the current trial production ion signal intensity, calculate the ion signal intensity range corresponding to the current maintenance cycle, including: Based on the first signal fluctuation range in the historical production data, the second signal fluctuation range of the current maintenance cycle is calculated; the first signal fluctuation range is the difference between the upper limit and the lower limit of the ion signal intensity in each historical production cycle. Calculate the difference between the average signal strength in the historical production data and the ion signal strength in the historical trial production; the average signal strength is the average ion signal strength during the production process in each historical maintenance cycle; Calculate the target signal strength value for the current maintenance cycle based on the current trial production ion signal strength and the difference. Based on the second signal fluctuation range and the target signal intensity value, calculate the ion signal intensity range corresponding to the current maintenance cycle; The fluctuation range of the second signal is calculated using the following formula: Range=ax1+bx2+cx3+…+mx n , The target signal strength value is calculated using the following formula: Target = A + ay l +by2+cy3+…+my n , Where Range represents the fluctuation range of the second signal, a, b, c, and m are the weights corresponding to the previous n maintenance cycles of the current maintenance cycle, and x1, x2, x3, x4, x5, x6, x7, x8, x9, x1, x1, x2, x1, x2, x3, x9, x1, x1, x2, x1, x1, x2, x9, x1, x1, x1, x2, x1, x1, x1, n These represent the fluctuation range of the first signal corresponding to the nth maintenance cycle of the current maintenance cycle; Target is the target signal intensity value, A is the current trial production ion signal intensity, and y1, y2, y3, y n These are the differences between the average signal intensity of the previous n maintenance cycles and the historical ion signal intensity during trial production, respectively.

2. The method according to claim 1, characterized in that, The current trial production data includes the process parameters of the current trial production wafer. Before comparing the current ion signal intensity of the process cavity within the current maintenance cycle, which is monitored during formal production, with the ion signal intensity range corresponding to the current maintenance cycle to obtain the monitoring result of the plasma collision intensity of the process cavity, the method further includes: Based on the process parameters, a failure analysis is performed on the currently pilot-produced wafer to obtain the analysis results; The analysis results indicate that when the current trial production wafer experiences etching termination, a first alarm message indicating an abnormality in the current maintenance cycle is sent.

3. The method according to any one of claims 1 to 2, characterized in that, The step of comparing the current ion signal intensity of the process chamber within the current maintenance cycle, as monitored during formal production, with the ion signal intensity range corresponding to the current maintenance cycle, to obtain the monitoring result of the plasma collision intensity of the process chamber includes: Determine whether the current ion signal intensity meets the ion signal intensity range, and obtain the determination result; If the judgment result is yes, then the plasma collision intensity is normal; If the judgment result is negative, then the plasma collision intensity is abnormal, and a second alarm message indicating abnormal plasma collision intensity is issued.

4. A plasma collision intensity monitoring device, characterized in that, The device includes: The acquisition module is used to acquire historical production data and current trial production data of the process chamber, wherein the current trial production data includes the current trial production ion signal intensity; The calculation module is used to calculate the range of ion signal intensity corresponding to the current maintenance cycle based on the historical production data and the current trial production ion signal intensity. The monitoring module is used to compare the current ion signal intensity of the process chamber within the current maintenance cycle, which is obtained during the formal production process, with the ion signal intensity range corresponding to the current maintenance cycle, to obtain the monitoring result of the plasma collision intensity of the process chamber. Based on the historical production data and the current trial production ion signal intensity, calculate the ion signal intensity range corresponding to the current maintenance cycle, including: Based on the first signal fluctuation range in the historical production data, the second signal fluctuation range of the current maintenance cycle is calculated; the first signal fluctuation range is the difference between the upper limit and the lower limit of the ion signal intensity in each historical production cycle. Calculate the difference between the average signal strength in the historical production data and the ion signal strength in the historical trial production; the average signal strength is the average ion signal strength during the production process in each historical maintenance cycle; Calculate the target signal strength value for the current maintenance cycle based on the current trial production ion signal strength and the difference. Based on the second signal fluctuation range and the target signal intensity value, calculate the ion signal intensity range corresponding to the current maintenance cycle; The fluctuation range of the second signal is calculated using the following formula: Range=ax1+bx2+cx3+…+mx n , The target signal strength value is calculated using the following formula: Target = A + ay l +by2+cy3+…+my n , Where Range represents the fluctuation range of the second signal, a, b, c, and m are the weights corresponding to the previous n maintenance cycles of the current maintenance cycle, and x1, x2, x3, x4, x5, x6, x7, x8, x9, x1, x1, x2, x1, x2, x3, x9, x1, x1, x2, x1, x1, x2, x9, x1, x1, x1, x2, x1, x1, x1, n These represent the fluctuation range of the first signal corresponding to the nth maintenance cycle of the current maintenance cycle; Target is the target signal intensity value, A is the current trial production ion signal intensity, and y1, y2, y3, y n These are the differences between the average signal intensity of the previous n maintenance cycles and the historical ion signal intensity during trial production, respectively.

5. An electronic device, characterized in that, include: At least one processor; as well as A memory communicatively connected to the at least one processor; wherein, The memory stores instructions that can be executed by the at least one processor to enable the at least one processor to perform the method of any one of claims 1-3.

6. A non-transitory computer-readable storage medium storing computer instructions, characterized in that, The computer instructions are used to cause the computer to perform the method according to any one of claims 1-3.

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