Substrate processing apparatus, processing vessel, method of manufacturing semiconductor device, and recording medium

Abstract

The present application provides a substrate processing apparatus capable of connecting and fixing a showerhead to a reaction tube while preventing the showerhead from lodging, a processing container, a semiconductor device manufacturing method, and a recording medium. A technique is provided that includes a non-metal gas introduction portion that penetrates a side wall of a processing container and is provided integrally with the side wall, has a front end that protrudes into the processing container; a non-metal showerhead that has a first linear portion that is inserted inside the gas introduction portion and is in fluid communication with the gas introduction portion, and a second linear portion that is in fluid communication with the first linear portion and is disposed along an inner wall of the processing container; and a fixing block that is provided inside the side wall of the processing container above the gas introduction portion, has a groove that enables the showerhead to move in a radial direction of the processing container.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus, a processing container, a method for manufacturing a semiconductor device, and a recording medium. Background Technology

[0002] Among the substrate processing apparatus used in the manufacturing method of semiconductor devices, there is a substrate processing apparatus having a nozzle that supplies processing gas relative to the substrate in the processing chamber (for example, Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: International Publication No. 2018 / 179157

[0006] Patent Document 2: Japanese Patent Application Publication No. 9-97767 Summary of the Invention

[0007] There are situations where wear-out nozzles need to be replaced and various nozzles need to be evaluated. In such cases, a technique is required to connect and secure the quartz nozzle to the quartz reaction tube while preventing the nozzle from tipping over.

[0008] The objective of this invention is to provide a technique that can connect and fix the nozzle to the reaction tube while preventing the nozzle from tipping over.

[0009] Other issues and new features will be identified based on the description and accompanying drawings in this specification.

[0010] The following is a brief summary of a representative solution in this invention.

[0011] According to one aspect of the present invention, a technology is provided, comprising:

[0012] A non-metallic gas inlet section penetrates the side wall of the processing container and is integrally formed with the side wall, and has a front end protruding into the processing container.

[0013] A non-metallic nozzle has a first straight section inserted inside the gas inlet and fluidly communicating with the gas inlet, and a second straight section fluidly communicating with the first straight section and disposed along the inner wall of the processing container; and

[0014] A fixing block, which is located inside the side wall of the processing container and above the gas inlet, has a groove that allows the nozzle to move in the radial direction of the processing container.

[0015] Invention Effects

[0016] According to the technology of the present invention, the nozzle can be connected to and fixed to the reaction tube while preventing the nozzle from tipping over. Attached Figure Description

[0017] Figure 1 This is a schematic structural diagram of a longitudinal processing furnace of a substrate processing apparatus preferred for use in one embodiment of the present invention, and is a diagram showing the processing furnace portion in longitudinal sectional view.

[0018] Figure 2 This is a schematic structural diagram showing the periphery of the furnace opening of the reaction tube of a substrate processing apparatus preferably used in one embodiment of the present invention. It is a horizontal cross-sectional view showing the periphery of the furnace opening.

[0019] Figure 3 This is a schematic structural diagram showing the nozzle inside the reaction tube of a substrate processing apparatus preferably used in one embodiment of the present invention.

[0020] Figure 4 This is a schematic structural diagram of a fixing block of a substrate processing apparatus preferred for use in one embodiment of the present invention.

[0021] Figure 5 This is a schematic structural diagram of the front end portion of the gas inlet section of a substrate processing apparatus preferably used in one embodiment of the present invention.

[0022] Figure 6 This is a schematic structural diagram of the reaction tube of a substrate processing apparatus preferably used in one embodiment of the present invention, located around the furnace opening. It is a longitudinal sectional view showing the gas inlet section.

[0023] Figure 7 This is a schematic structural diagram of the controller of a substrate processing apparatus preferred in one embodiment of the present invention, and a block diagram showing the control system of the controller.

[0024] Figure 8 This is a flowchart illustrating an example of a substrate processing step preferably used in one embodiment of the present invention.

[0025] Explanation of reference numerals in the attached figures

[0026] 1: Substrate processing device

[0027] 30: Nozzle

[0028] 40: Fixed block

[0029] 45: Limitation plate

[0030] 55: Stop plate

[0031] 203: Reaction tube

[0032] 232a, 232b: Gas supply pipes Detailed Implementation

[0033] Hereinafter, embodiments will be described using the accompanying drawings. In the following description, the same structural elements may be labeled with the same reference numerals, and repeated descriptions may be omitted. Furthermore, to make the description clearer, the drawings may schematically represent aspects compared to the actual form; however, these are merely examples and do not limit the interpretation of the invention.

[0034] (1) Example of the structure of a substrate processing device

[0035] Figure 1 This is a schematic structural diagram of a longitudinal processing furnace of a substrate processing apparatus preferably used in one embodiment of the present invention. It is a longitudinal sectional view showing the furnace portion. Figure 1 As shown, the substrate processing apparatus 1 includes a vertically oriented processing furnace 202. The processing furnace 202 includes a reaction tube 203 serving as a processing container. The reaction tube 203 is made of a heat-resistant and corrosion-resistant material such as quartz (SiO2) or silicon carbide (SiC), and is configured as a cylindrical component with a furnace opening at its lower end. A processing chamber 201 is formed in the hollow portion of the reaction tube 203. Inside the processing chamber 201, there is a wafer receiving area A (hereinafter referred to as area A), which houses a wafer 200 serving as a substrate, and a furnace opening peripheral area B (hereinafter referred to as area B), which is located vertically below area A and serves as a second area.

[0036] A sealing cap 219, serving as a cover, is provided below the reaction tube 203 to airtightly seal the lower opening of the reaction tube 203. A rotating mechanism 267 is provided below the sealing cap 219. The sealing cap 219 is formed in a disc shape, with an upper surface base portion 219a forming the upper surface side and a lower surface base portion 219b forming the lower surface side stacked. The upper surface base portion 219a is made of a non-metallic component, such as quartz, and its thickness is about 10 to 20 mm. The lower surface base portion 219b is made of a metallic component, such as stainless steel (SUS). The rotating shaft 255 of the rotating mechanism 267 passes through the sealing cap 219 and is connected to the boat 217. The rotating mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217. The bearing portion 219s of the rotating shaft 255, which is provided to the rotating shaft 255, is configured as a fluid seal such as a magnetic seal. The sealing cap 219 is raised and lowered vertically by a boat lift 115 located below the reaction tube 203. The boat lift 115 is configured as a conveying mechanism that moves the boat 217, i.e. the wafer 200, into and out of the processing chamber 201 by raising and lowering the sealing cap 219.

[0037] The boat 217, serving as a substrate support, is configured to support multiple wafers 200, for example, 25 to 200 wafers, in a horizontal orientation and arranged vertically with their centers aligned, i.e., arranged at intervals. The boat 217 is made of a heat-resistant material such as quartz or SiC, and has a top plate 217a and a bottom plate 217b on its top and bottom. The heat insulation body 218, which is horizontally supported in multiple layers at the bottom of the boat 217, is also made of a heat-resistant material such as quartz or SiC, and is configured to suppress heat conduction between region A and region B. The heat insulation body 218 can also be considered as part of the structural components of the boat 217.

[0038] A heater 207, serving as a first heating section, and a heater 208, serving as a second heating section, are provided on the outside of the reaction tube 203. The heater power supply unit 210 (see reference...) Figure 6 Power is supplied to heaters 207 and 208.

[0039] The heater 207 is mounted vertically in a manner that at least surrounds region A. The heater 207 is controlled in the substrate processing steps described later to heat the wafer 200 housed in region A to a specified temperature.

[0040] Heater 208 is positioned vertically below heater 207 in such a way that it surrounds at least a portion of region B.

[0041] The heater 208 is composed of multiple heater units arranged (divided) along the outer periphery of the reaction tube 203. In the substrate processing step described later, the heater 208 is controlled in a manner that specifically maintains the temperature of the sidewall around the furnace opening of the reaction tube 203 and the temperature of the piping at specified temperatures. Furthermore, the sidewall around the furnace opening of the reaction tube 203 will be referred to below only as the furnace opening sidewall.

[0042] Inside the processing chamber 201, a temperature sensor protection tube 263a is provided, extending from the outer side of the sidewall of the reaction tube 203 to the inner side and along the inner wall of the reaction tube 203. Inside the temperature sensor protection tube 263a, a temperature sensor 263, serving as a temperature detection unit, is installed, inserted from the outer side of the reaction tube 203. Based on the temperature information detected by the temperature sensor 263, the output of the heater 207 is adjusted. The temperature sensor 263 is mainly composed of a thermocouple. Alternatively, multiple temperature sensors 263 and temperature sensor protection tubes 263a may be provided.

[0043] A first gas supply pipe 232a and a second gas supply pipe 232b are connected to the side wall of the reaction tube 203 to supply gas to the processing chamber 201. Gas supply pipes 232a and 232b are non-metallic gas supply pipes made of heat-resistant materials such as quartz (SiO2) or silicon carbide (SiC), passing through the side wall of the reaction tube 203 near the furnace opening (i.e., around region B) from the outside to the inside, and then extending upwards along the inner wall of the reaction tube 203. Gas supply pipe 232b is further configured to pass upwards from the top wall portion of the reaction tube 203 and, once exiting the reaction tube 203, connect to the inside of the reaction tube 203 near the center of the top wall portion. The front end or side portion of gas supply pipe 232a and the front end opening of gas supply pipe 232b constitute a gas supply port (exhaust port). Gas supply pipe 232a is configured to supply the vaporized gas of the first oxidant to the processing chamber 201, and gas supply pipe 232b is configured to supply the gas of the second oxidant to the processing chamber 201.

[0044] On the gas supply pipe 232a, a gas generator 250a, a mass flow controller (MFC) 241a (serving as a flow controller, flow control unit), and a valve 243a (serving as an on / off valve) are sequentially arranged from the upstream side. A liquid supply pipe for supplying a first oxidant (a liquid raw material) and a carrier gas supply pipe for supplying a carrier gas for vaporizing the liquid are connected to the gas generator 250a. The first oxidant has the characteristic of being easily liquefied. The first oxidant may also have the property of corroding metal, for example, by destroying the passivation layer and causing it to rust, either alone or in mixture with other substances in the processing container.

[0045] On the gas supply pipe 232b, a gas source 250b, a mass flow controller (MFC) 241b (serving as a flow controller, flow control unit), and a valve 243b (serving as an on / off valve) are arranged sequentially from the upstream side. The gas source 250b is a gas supply pipe that supplies gas to the second oxidant, which is a gaseous raw material, and / or a carrier gas supply pipe that supplies carrier gas. When the second oxidant is a liquid raw material, the gas source 250b becomes a gas generator.

[0046] The first oxidant can be, for example, at least one of hydrogen peroxide, water, and ozone. The second oxidant can be, for example, oxygen (O2).

[0047] Here, the case where the first oxidant is, for example, hydrogen peroxide (hydrogen peroxide water).

[0048] Hydrogen peroxide water is an aqueous solution obtained by dissolving hydrogen peroxide (H2O2), which is liquid at room temperature, in water (H2O) as a solvent. The gas generator 250a generates vaporized gas by heating the hydrogen peroxide water to a specified temperature (vaporization temperature). The vaporized gas contains gaseous or atomized H2O2 and water vapor (H2O gas) at specified concentrations. The H2O2 contained in the vaporized gas is a type of reactive oxygen species, unstable, and readily releases O, generating OH free radicals, thus functioning as an oxidant (O source, oxygen source) with very strong oxidizing power.

[0049] The vaporized gas supply system mainly consists of gas supply pipe 232a, MFC 241a, and valve 243a. The gas supply system consists of gas supply pipe 232b, MFC 241b, and valve 243b.

[0050] An exhaust pipe 231 is connected to the side wall near the furnace opening (around the furnace opening) of the reaction tube 203 to discharge ambient gas from the processing chamber 201. A vacuum pump 246, serving as an exhaust device, is connected to the exhaust pipe 231 via a pressure sensor 245 (which detects the pressure inside the processing chamber 201) and an APC valve 244 (which acts as a pressure regulator). The APC valve 244 is configured to allow for vacuum exhaust and cessation of vacuum exhaust within the processing chamber 201 by opening and closing the valve while the vacuum pump 246 is operating, and to adjust the pressure inside the processing chamber 201 by adjusting the valve opening based on the pressure information detected by the pressure sensor 245 while the vacuum pump 246 is operating. The exhaust system mainly consists of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. Alternatively, the vacuum pump 246 can be included in the exhaust system.

[0051] Figure 2 This is a schematic structural diagram showing the periphery of the furnace opening of the reaction tube in a preferred embodiment of the substrate processing apparatus of the present invention. It is a horizontal sectional view showing the periphery of the furnace opening. Figure 2 As shown, gas supply pipes 232a and 232b, temperature sensor protection pipe 263a, and exhaust pipe 231 are provided on the side wall of the furnace opening of the reaction tube 203. Side wall temperature sensors 303a, 303a', and 303b for measuring the temperature of the outer circumferential surface of the furnace opening can be installed on the side wall of the furnace opening of the reaction tube 203.

[0052] use Figures 3-6 This section describes a structural example of the installation of the first gas supply pipe 232a and the second gas supply pipe 232b, as well as a structural example of the gas inlet section. Figure 3 This is a schematic structural diagram showing the nozzle inside the reaction tube of a substrate processing apparatus preferably used in one embodiment of the present invention. Figure 4This is a schematic structural diagram of a fixing block of a substrate processing apparatus preferred for use in one embodiment of the present invention. Figure 5 This is a schematic structural diagram of the front end portion of the gas inlet section of a substrate processing apparatus preferably used in one embodiment of the present invention. Figure 6 This is a schematic structural diagram of the reaction tube of a substrate processing apparatus preferably used in one embodiment of the present invention, located around the furnace opening. It is a longitudinal sectional view showing the gas inlet section.

[0053] Figure 3 This is a perspective view of the inner wall 2031 of the reaction tube 203 as seen from the inside. A first gas supply pipe 232a and a second gas supply pipe 232b are installed on the inner wall 2031 of the reaction tube 203. The first gas supply pipe 232a is detachably installed on the inner wall 2031 of the reaction tube 203. On the other hand, the second gas supply pipe 232b is non-detachably installed on the inner wall 2031 of the reaction tube 203.

[0054] The first gas supply pipe 232a is composed of a replaceable nozzle 30. The nozzle 30 has a first straight section 31 (see reference) that is inserted into the inside of the gas inlet (gas port) 50 and fluidly communicates with the gas inlet 50. Figure 6 The nozzle 30 consists of a first straight section 31 and a second straight section 32, which is fluidly connected to the first straight section 31 and disposed along the inner wall 2031 of the reaction tube (hereinafter also referred to as the processing container) 203. The first straight section 31 and the second straight section 32 are approximately right angles, and the nozzle 30 as a whole is L-shaped.

[0055] The second straight section 32 of the nozzle 30 is positioned above by the fixing block 40 and below by the front end 51 of the gas inlet section 50, thus forming a structure that can connect and fix the nozzle 30 to the reaction tube 203 while preventing the nozzle 30 from falling over and falling off.

[0056] like Figure 3 , Figure 4 As shown, the fixing block 40 is located on the inner wall 2031 of the side wall 203s of the reaction tube 203 and above the gas inlet section 50.

[0057] The fixing block 40, when viewed from above, has a groove 41 that allows the nozzle 30 to move in the radial direction of the reaction tube 203. The fixing block 40 is integrally formed with the inner wall 2031 of the reaction tube 203 by means of welding, for example, and the groove 41 is open toward the inside of the reaction tube 203.

[0058] The groove 41 of the fixing block 40 has a widened portion 43. A limiting plate 45, serving as a limiting member, is embedded in the widened portion 43. The widened portion 43 does not extend to the lower end of the fixing block 40. The limiting plate 45 is non-metallic and is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC).

[0059] By inserting the limiting plate 45 into the widening portion 43 with the nozzle 30 positioned on the bottom side of the groove 41 (the side closest to the inner wall 2031) compared to the widening portion 43, the movement of the nozzle 30 (in the radial direction toward the reaction tube 203) can be restricted. In other words, the nozzle 30 (the second straight portion 32) is positioned horizontally by being clamped between the end 41e of the outer periphery of the groove 41 of the fixing block 40 and the limiting plate 45.

[0060] The fixing block 40 is preferably located at the position where the operator extends his arm from the furnace opening portion of the reaction tube 203. It can be set at a height in the heat insulation area of ​​the reaction tube 203 (e.g., the height above area B), a height less than 40 cm from the furnace opening, or a height lower than the center of the nozzle 30 in the height direction.

[0061] like Figure 3 , Figure 5 As shown, the gas inlet 50 penetrates the sidewall 203s of the reaction tube 203 and is integrally formed with the sidewall 203s, and has a front end 51 protruding into the reaction tube 203. The gas inlet 50 is made of the same material as the reaction tube 203, such as a heat-resistant material like quartz (SiO2) or silicon carbide (SiC), and is non-metallic. The gas inlet 50 may have a double-tube structure where the ends are joined together on the outside of the processing container for the purpose of heat insulation or stress mitigation.

[0062] The end of the gas inlet 50 inside the reaction tube 203 (the front end 51 portion) extends further inside the reaction tube 203 than the nozzle 30. The front end 51 of the gas inlet 50 inside the reaction tube 203 has a groove 53 into which a stop plate 55, which serves as a stop member, is inserted. The lower side of the nozzle 30 (the second straight portion 32) is configured to be positioned horizontally by inserting the stop plate 55 into the groove 53. By inserting the stop plate 55 into the groove 53, the movement of the nozzle 30 (in the radial direction of the reaction tube 203) can be restricted.

[0063] The gas inlet section 50 has an inlet pipe 57, which has an inner diameter that is approximately corresponding to the outer diameter of the nozzle 30.

[0064] The inlet tube 57 corresponds to the inner tube in the double-tube structure. At the front end (51) and upper end of the inlet tube 57, there is a U-shaped cutout 52 with a width approximately corresponding to the inner diameter. The cutout 52 opens the upper half of the front end of the inlet tube 57, avoiding interference with the second straight section of the nozzle 30.

[0065] The lower end of the nozzle 30 has a shape corresponding to the surface opposite to the gas inlet 50, and has an opening that allows fluid communication between the interior of the nozzle 30 and the inlet pipe 57. As described above, no metal parts are used inside the reaction tube 203. This prevents corrosion caused by contact with liquefied raw materials and metal contamination inside the reaction tube.

[0066] (Example of the structure of the gas inlet section)

[0067] use Figure 6 Example of the structure of the gas inlet section. Figure 6 This is a schematic structural diagram of the reaction tube of a substrate processing apparatus preferably used in one embodiment of the present invention, located around the furnace opening. It is a longitudinal sectional view showing the gas inlet section.

[0068] like Figure 6 As shown, a gas inlet 50 is provided on the side wall 203s of the reaction tube (processing container) 203. The nozzle 30 is fixed to the mounting plate 68 by means of a first buffer ring 60, a first sealing ring 61, a washer 62, a union screw 63, a sleeve 64, a second buffer ring 65, a second sealing ring 66, a cap nut 67, and a helical spring 70, etc., while being inserted into the gas inlet 50. A cooling block 72 for cooling the furnace opening portion of the reaction tube 203 and a retaining member 73 for holding the furnace opening portion of the reaction tube 203 are provided at the furnace opening portion of the reaction tube 203.

[0069] The sleeve 64 is made of a metal such as stainless steel (SUS) or a corrosion-resistant material such as quartz (SiO2) and is cylindrical in shape. A groove is formed at the front end of one end of the sleeve 64 (the side with the gas inlet 50) for the first buffer ring 60 and the first sealing ring 61 to be inserted, and external threads are cut on the outer circumference of the other end (the side with the cap nut 67).

[0070] The counter-rotating screw 63 is made of a metal such as stainless steel (SUS) and is cylindrical in shape. The outer right side of the counter-rotating screw 63 has external threads that engage with a threaded hole in the mounting plate 68, which is made of a metal such as stainless steel (SUS). The outer left side of the counter-rotating screw 63 is shaped like a hexagonal nut. By screwing the counter-rotating screw 63 into the mounting plate 68, the helical spring 70 is stressed, and the right end of the sleeve 64 is pressed against the left wall of the gas inlet 50 via the first sealing ring 61.

[0071] The first sealing ring (also known as an O-ring) is made of fluoropolymer such as polytetrafluoroethylene (PTFE) and is designed in a ring shape. It seals the front end (right side) of the sleeve 64 with the front end (left side wall) of the gas inlet 50.

[0072] The second sealing ring (also known as an O-ring) is made of fluoropolymer such as polytetrafluoroethylene (PTFE) and is designed in a ring shape. It seals the other front end (left side) of the sleeve 64 with the outer circumferential surface of the nozzle 30.

[0073] The first buffer ring 60 and the second buffer ring 65 are made of fluoropolymers such as polytetrafluoroethylene (PTFE) and are used to prevent excessive deformation of the sealing rings (61, 66).

[0074] Washer 62 is made of metal such as stainless steel (SUS) and is provided between the opposing screw 63 and the sleeve 64 and between the helical spring 70 and the opposing screw 63 to reduce friction.

[0075] The cap nut 67 is made of a metal such as stainless steel (SUS) and is used to screw into the outer circumference of the left end of the sleeve 64, clamping the second sealing ring 66 between the sleeve 64 and the cap nut 67, thereby pressing the second sealing ring 66 against the sleeve 64 and the nozzle 30.

[0076] In this way, the nozzle 30 is supported by a sleeve 64 that is not directly connected to the mounting plate 68. Therefore, even if the assembly dimensional tolerance between the gas inlet 50 and the mounting plate 68 is large, the nozzle 30 can be installed without damage, and the nozzle angle can be finely adjusted.

[0077] When the nozzle 30 is installed in the reaction tube (processing container) 203, it can be done as follows.

[0078] 1) Insertion procedure of nozzle 30:

[0079] The operator inserts the nozzle 30 into the reactor tube 203 through the furnace opening at the bottom of the tube. Then, the first straight section 31 of the nozzle 30 is inserted into the gas inlet 50, and the second straight section 32 of the nozzle 30 is inserted into the groove 41 until the second straight section 32 of the nozzle 30 touches the bottom (outer peripheral end 41e) of the groove 41 of the fixing block 40. In this state, the operator can remove their hand from the nozzle 30 without causing it to detach, tilt, or break.

[0080] 2) Installation procedure of limiting plate 45 and stop plate 55:

[0081] The operator reaches inward from the furnace opening of the reaction tube 203, inserts the limiting plate 45 into the widening section 43, and inserts the stop plate 55 into the groove section 53.

[0082] 3) Installation procedure of nozzle 30 into gas inlet 50:

[0083] The operator properly tightens the opposing spiral component 63 and the cap nut 67, and installs the nozzle 30 airtightly onto the gas inlet section 50.

[0084] When removing the nozzle 30 from the reaction tube 203, it can be removed by reversing steps 1), 2), and 3) of the installation process described above. Specifically, loosen the counter-rotating screw 63 and the cap nut 67, then remove the limiting plate 45 and the stop plate 55, and pull the first straight section 31 of the nozzle 30 from the gas inlet 50. Then, remove the nozzle 30 from the furnace opening portion of the reaction tube 203 to the outside of the reaction tube 203.

[0085] Therefore, the quartz nozzle 30, which constitutes the first gas supply pipe 232a, can be connected to and fixed in the quartz reaction pipe 203 while preventing it from collapsing inside the reaction pipe 203. Furthermore, the nozzle 30 within the processing chamber 203 can be replaced, allowing for the evaluation of various nozzle types.

[0086] (Controller)

[0087] Next, use Figure 7 The controller 121 is described as controlling the operation of each part of the substrate processing apparatus 1. Figure 7 This is a schematic structural diagram of the controller of a substrate processing apparatus preferred in one embodiment of the present invention, and a block diagram showing the control system of the controller.

[0088] like Figure 7 As shown, the substrate processing apparatus 1 includes a controller 121 that controls the operation of each part of the substrate processing apparatus 1. The controller 121, as a control unit, is configured as a computer including a CPU 121a, RAM 121b, storage device 121c, and I / O port 121d. The RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, configured as a touch panel or the like, is connected to the controller 121.

[0089] The storage device 121c is composed of flash memory or HDD (Hard Disk Drive), etc. The storage device 121c can readablely store control programs that control the operation of the substrate processing apparatus, and process recipes that describe the steps and conditions of the substrate processing described later. The process recipes are combined in a way that enables the controller 121 to execute the steps described later and obtain a specified result, and function as a program. Hereinafter, the process recipes and control programs will be collectively referred to as a program. Alternatively, the process recipe will be referred to simply as a recipe. When the term "program" is used in this specification, it may include only the recipe, only the control program, or both. RAM 121b is configured as a storage area that temporarily holds programs and data read by the CPU 121a.

[0090] I / O port 121d is connected to the aforementioned MFC241a, valve 243a, gas generator 250a, pressure sensor 245, APC valve 244, vacuum pump 246, heater power supply unit 210, temperature sensor 263, side wall temperature sensors 303a, 303a', 303b, gas supply pipe temperature sensor (not shown), exhaust pipe temperature sensor (not shown), rotating mechanism 267, and boat lifting mechanism 115. The gas supply pipe temperature sensor measures the temperature of gas supply pipes 232a and 232b. The exhaust pipe temperature sensor measures the temperature of exhaust pipe 231.

[0091] CPU 121a is configured to read and execute control programs from storage device 121c, and to read recipes from storage device 121c based on input of operation instructions from input / output device 122. CPU 121a is configured to control the following actions in accordance with the read recipe: gas generation based on gas generator 250a; gas flow adjustment based on MFC 241a; opening and closing of valve 243a; pressure adjustment based on pressure sensor 245 using APC valve 244; starting and stopping of vacuum pump 246; adjustment of power supply from heater power unit 210 to heaters 207, 208 and cover heater based on temperature sensor 263, side wall temperature sensors 303a, 303a', 303b, gas supply pipe temperature sensor, and exhaust pipe temperature sensor; rotation and speed adjustment of boat 217 based on rotation mechanism 267; and lifting of boat 217 based on boat lift 115. The cover heater is a heater located on the underside of the sealing cover 219 for heating the sealing cover 219.

[0092] The controller 121 can be configured to install the aforementioned program stored in an external storage device (such as an HDD, CD, MO, or USB memory) 123 onto a computer. The storage device 121c and the external storage device 123 constitute a computer-readable recording medium. Hereinafter, they will be referred to collectively as a recording medium. When the term "recording medium" is used in this specification, there may be a case that includes only the storage device 121c, a case that includes only the external storage device 123, or a case that includes both. Furthermore, the program can be provided to the computer without using the external storage device 123, but using communication means such as the Internet and dedicated lines.

[0093] (2) Substrate processing process

[0094] Next, use Figure 8 This describes an example of a substrate processing step that is performed using substrate processing apparatus 1 as a step in the manufacturing process of a semiconductor device. Figure 8 This is a flowchart illustrating an example of a substrate processing step preferably used in one embodiment of the present invention. In the following description, the operation of each part constituting the substrate processing apparatus 1 is controlled by the controller 121.

[0095] Furthermore, in this substrate processing step, a film (polysilazane film or siloxane polymer) having silazane bonds (-Si-N-) or siloxane bonds (-O-Si-O-) is formed on the surface of the substrate to which the prescribed treatment is performed. These films are often formed by coating methods and are also known as SOD (Spin-on Dielectric) or SOG (Spin-on Grass). For example, there are cases where the polysilazane film contains nitrogen (N), hydrogen (H), and carbon (C) and other impurities in addition to silicon (Si). In this substrate processing step, the polysilazane film formed on the wafer 200 is modified (oxidized) by supplying a vaporized gas containing a first oxidant to the film at a relatively low temperature.

[0096] (Substrate handling process: Step S1)

[0097] Multiple wafers 200 with a polysilazane film formed on their surface are loaded into a boat 217. Then, as... Figure 1 As shown, the boat 217 supporting multiple wafers 200 is lifted by the boat elevator 115 and moved into the processing chamber 201. In this state, the sealing cap 219 seals the lower end of the reaction tube 203 via an O-ring.

[0098] (Pressure and temperature adjustment process: Step S2)

[0099] The vacuum inside the processing chamber 201, i.e., the space where the wafer 200 is located, is evacuated by a vacuum pump 246 to a predetermined pressure (modification pressure). In addition, the reaction tube 203, the wafer 200 housed in the processing chamber 201, and the sealing cap 219 are heated by heaters 207, 208 and a cap heater.

[0100] At this time, with the chip 200 stored in region A at a predetermined temperature, the power supply from the heater power unit 210 to the heater 207 is controlled based on the temperature information detected by the temperature sensor 263.

[0101] In addition, based on the temperature information detected by the temperature sensors (side wall temperature sensors 303a, 303b, gas supply pipe temperature sensor, and exhaust pipe temperature sensor) installed in the heater 208, the power supply from the heater power unit 210 to the heater unit 208 is controlled by feedback in such a way that the temperature of the side wall of the furnace opening of the reaction tube 203 and the temperatures of the gas supply pipe 232a, the temperature sensor protection pipe 263a and the exhaust pipe 231 are respectively set to a specified temperature (or a specified temperature distribution).

[0102] Feedback control of heaters 207 and 208 continues at least until the processing of wafer 200 is completed. Additionally, rotation of wafer 200 begins based on rotation mechanism 267. Operation of vacuum pump 246, heating of wafer 200, and rotation all continue at least until the processing of wafer 200 is completed.

[0103] (Modification process: Step S3)

[0104] Next, the liquid raw material and carrier gas are supplied to the gas generator 250a, which generates the vaporized gas of the first oxidant. After the amount and concentration of the vaporized gas stabilize, valves 243a and 243b are opened. While the flow is controlled by MFCs 241a and 241b, the first and second oxidants are supplied to the processing chamber 201 through the gas supply holes of gas supply pipes 232a and 232b. The gas supplied to the processing chamber 201 is discharged from the exhaust pipe 231. At this time, an oxidation reaction occurs on the surface of the wafer 200, and the polysilazane film on the wafer 200 is modified into a silicon oxide film (SiO film).

[0105] After the polysilazane membrane has been modified into a SiO membrane for the specified time, valve 243a is closed to stop the supply of vaporized gas to the processing chamber 201.

[0106] Examples of processing conditions for the modification process are as follows.

[0107] The concentration of the first oxidant in the liquid feedstock is 20-40%, preferably 25-35%.

[0108] Vaporization conditions for liquid feedstocks: heating to 120–200°C at approximately atmospheric pressure.

[0109] Modification pressure: 700–1000 hPa (atmospheric pressure, slight depressurization, or slight pressurization).

[0110] Temperature of wafer 200: 70–110°C, preferably 70–80°C

[0111] Under the temperature conditions described herein, the vaporized gas supplied to the processing chamber 201 may liquefy again within the processing chamber 201, resulting in liquid retention around the furnace opening (upper surface of the sealing cover 219, etc.). In particular, localized low-temperature zones may sometimes form in the furnace opening sidewall, the gas supply pipe 232a within the processing chamber 201, the temperature sensor protection pipe 263a, etc., as described above. Due to contact with these locally generated low-temperature zones, the vaporized gas is prone to liquefaction again.

[0112] In this embodiment, by controlling the heater 208 configured as described above, the sidewalls of the furnace opening of the reaction tube 203 are heated evenly, thereby preventing the formation of localized low-temperature regions. Here, to prevent re-liquefaction, temperature control is performed so that no region below a predetermined temperature (first lower limit temperature) is formed in the sidewalls around the furnace opening. The lower limit temperature varies depending on conditions such as the concentration of the vaporized gas, but is, for example, 80°C or higher under the processing conditions described above.

[0113] (Drying process: Step S4)

[0114] After the modification process is completed, the heater 207 is controlled to heat the wafer 200 to a temperature higher than the modification temperature described above. By maintaining this temperature, the wafer 200 and the processing chamber 201 are dried gradually.

[0115] (Cooling and atmospheric pressure recovery process: Step S5)

[0116] After the drying process is completed, the vacuum in the processing chamber 201 is exhausted. Then, the pressure in the processing chamber 201 is restored to atmospheric pressure, and after a specified time, the temperature in the processing chamber 201 is cooled to the specified temperature at which it can be removed.

[0117] (Substrate removal process: Step S6)

[0118] The sealing cap 219 is lowered by the boat lift 115, opening the lower end of the reaction tube 203. Then, the processed wafer 200 is moved out of the reaction tube 203 from the lower end of the reaction tube 203.

[0119] The present invention has been specifically described above based on the embodiments, but the present invention is not limited to the above embodiments and examples, and various modifications can be made.

Claims

1. A substrate processing apparatus, characterized in that, have: A non-metallic gas inlet section penetrates the side wall of the processing container and is integrally formed with the side wall, having a front end protruding into the processing container; A non-metallic nozzle having a first straight section inserted inside the gas inlet and fluidly communicating with the gas inlet, and a second straight section fluidly communicating with the first straight section and disposed along the inner wall of the processing container; and A fixing block, located inside the side wall of the processing container and above the gas inlet, has a groove that allows the nozzle to move in the radial direction of the processing container.

2. The substrate processing apparatus as claimed in claim 1, characterized in that, The end of the gas inlet section inside the processing container is configured to extend inward toward the processing container compared to the nozzle, and a stop is inserted at the end.

3. The substrate processing apparatus as claimed in claim 1, characterized in that, The fixing block is integrally formed with the processing container. The slot opens toward the inside of the processing container.

4. The substrate processing apparatus as claimed in claim 3, characterized in that, The groove has a widening portion, and the substrate processing apparatus also includes a non-metallic limiting member that is inserted into the widening portion when the nozzle is positioned on the bottom side of the groove relative to the widening portion, thereby restricting the movement of the nozzle.

5. The substrate processing apparatus as claimed in claim 1, characterized in that, The fixing block is located at a height in the heat insulation area of ​​the processing container or at a height lower than the center of the nozzle in the height direction.

6. The substrate processing apparatus as claimed in claim 5, characterized in that, The fixing block is located within 40cm of the furnace opening of the processing container.

7. The substrate processing apparatus as claimed in claim 4, characterized in that, The widened portion is configured not to extend to the lower end of the fixing block.

8. The substrate processing apparatus as claimed in claim 4, characterized in that, The nozzle is positioned horizontally by being clamped between the end of the groove on its outer periphery and the limiting member.

9. The substrate processing apparatus as claimed in claim 2, characterized in that, The gas inlet has an inlet tube with an inner diameter that roughly corresponds to the outer diameter of the nozzle, and a U-shaped cut at the front end and upper end of the inlet tube with a width that roughly corresponds to the inner diameter.

10. The substrate processing apparatus as claimed in claim 9, characterized in that, The lower end of the nozzle has a shape corresponding to the surface opposite to the gas inlet, and has an opening that allows fluid communication between the interior of the nozzle and the inlet pipe.

11. The substrate processing apparatus as claimed in claim 1, characterized in that, The nozzle has an outlet for supplying at least one of vaporized hydrogen peroxide, water, and ozone into the treatment container.

12. The substrate processing apparatus as claimed in claim 1, characterized in that, The nozzle is supported by a sleeve that is not rigidly connected to the mounting plate.

13. A processing container, characterized in that, have: Sidewall; A non-metallic gas inlet, which penetrates the sidewall and is integrally formed with the sidewall, has a front end protruding into the processing container; and A fixing block, located inside the side wall and above the gas inlet, has a groove that allows the nozzle to move radially within the processing container. The fixing block is configured to hold the second straight section when a nozzle having a first straight section and a second straight section extending from the first straight section after bending is inserted from the inside of the gas inlet.

14. A method for manufacturing a semiconductor device, characterized in that, The process includes the following steps: The process of transferring a substrate into the processing container of a substrate processing apparatus; and The process of processing the substrate. The substrate processing apparatus includes: a non-metallic gas inlet portion that penetrates and is integrally formed with the sidewall of the processing container and has a front end protruding into the processing container; a non-metallic nozzle having a first straight portion inserted into and fluidly communicating with the gas inlet portion, and a second straight portion fluidly communicating with the first straight portion and disposed along the inner wall of the processing container; and a fixing block disposed inside the sidewall of the processing container and above the gas inlet portion, having a groove that allows the nozzle to move in the radial direction of the processing container.

15. A recording medium, which is a computer-readable recording medium, stores a computer program, characterized in that, When the program is executed by the computer of the substrate processing device, the following steps are performed: The step of transferring a substrate into the processing container of the substrate processing apparatus; and The steps for processing the substrate. in, The substrate processing apparatus includes: a non-metallic gas inlet portion that penetrates and is integrally formed with the sidewall of the processing container and has a front end protruding into the processing container; a non-metallic nozzle having a first straight portion inserted into and fluidly communicating with the gas inlet portion, and a second straight portion fluidly communicating with the first straight portion and disposed along the inner wall of the processing container; and a fixing block disposed inside the sidewall of the processing container and above the gas inlet portion, having a groove that allows the nozzle to move in the radial direction of the processing container.

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