A substrate integrated dual-polarized antenna based on composite right / left-handed transmission line

Abstract

The application discloses a substrate integrated dual-polarized antenna based on a composite mode transmission line, which comprises a dual-mode feed network and a radiation network which are sequentially stacked in a bottom-up order, the dual-mode feed network is used for accessing TE10 mode signals and TEM mode signals and transmitting the TE10 mode signals and the TEM mode signals to the radiation network, the radiation network is used for radiating the TE10 mode signals and the TEM mode signals transmitted by the dual-mode feed network to the free space, the dual-mode feed network is realized by using a hybrid feed network based on a substrate integrated waveguide and a SICL feed structure, and the radiation network is realized by using a radiation network based on a dipole structure; the substrate integrated dual-polarized antenna has the advantages that the antenna has a low profile, high isolation, high beam amplitude and high phase stability, and can meet the application requirements of high gain and high isolation of a microwave communication link.

Description

Technical Field

[0001] This invention relates to dual-polarized antennas, and more particularly to a substrate-integrated dual-polarized antenna based on a composite mode transmission line. Background Technology

[0002] In microwave dual-polarized planar antenna applications, two sets of single-polarized antennas are typically placed alternately within a limited space. However, this overly compact layout increases the coupling between the two sets of single-polarized antennas, resulting in poor isolation between the received and transmitted signals. To achieve higher port isolation, dual-polarized antennas are usually used directly on the same radiating surface.

[0003] Traditional dual-polarized antennas use a feed network transition layer to avoid the overlap between received and transmitted signals. While this improves isolation, it also increases structural complexity, leading to an increase in profile height and raising the risk of signal leakage.

[0004] To date, most existing dual-polarized antenna solutions attempt to balance isolation and structural complexity, making it impossible to simultaneously achieve optimal results in both profile height and isolation. When these solutions are used to implement large-scale array dual-polarized antennas, the lack of adequate isolation leads to coupling and superposition between elements in the array, significantly impacting beam amplitude and phase stability. This ultimately results in reduced gain and beam phase shift, failing to meet the practical application requirements of high gain and high isolation in current microwave communication links. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to provide a substrate-integrated dual-polarized antenna based on a composite mode transmission line that has a low profile, high isolation, high beam amplitude and phase stability, and can meet the application requirements of high gain and high isolation in microwave communication links.

[0006] The technical solution adopted by this invention to solve the above-mentioned technical problems is as follows: A substrate-integrated dual-polarized antenna based on a composite mode transmission line, comprising a dual-mode feed network and a radiating network stacked sequentially from bottom to top. The dual-mode feed network is used to receive TE10 mode signals and TEM mode signals, and transmit the TE10 mode signals and TEM mode signals to the radiating network. The radiating network is used to radiate the TE10 mode signals and TEM mode signals transmitted from the dual-mode feed network to free space. The dual-mode feed network is implemented using a hybrid feed network based on a substrate-integrated waveguide and SICL feed structure; the radiating network is implemented using a radiating network based on a dipole structure.

[0007] The dual-mode feed network comprises two rectangular dielectric substrates, a substrate integrated waveguide feed network, an SICL feed network, sixteen slotted gaps, thirty-two first metallized vias, and thirty-two feed reflection cavities. The two rectangular dielectric substrates are stacked vertically, referred to as the first dielectric substrate and the second dielectric substrate from top to bottom. The length direction of the first dielectric substrate and the second dielectric substrate is taken as the left-right direction, the width direction as the front-back direction, and the thickness direction as the top-bottom direction. A first copper layer is attached to the upper surface of the first dielectric substrate, and a second copper layer is attached to the lower surface of the second dielectric substrate. The first copper layer has the same size as the upper surface of the first dielectric substrate, and the second copper layer has the same size as the lower surface of the second dielectric substrate. The substrate integrated waveguide feed network consists of a 1-to-16 power divider, which has one input port and sixteen output ports. This power divider splits a single TE10 mode signal input to its input port into sixteen TE10 mode signals, each output through one of its sixteen corresponding output ports. The input port of the power divider is the substrate integrated waveguide feed. The input ports of the network and the sixteen output ports of the 1-to-16 power divider are the sixteen output ports of the substrate integrated waveguide feed network, which extend to the upper surface of the first dielectric substrate. The sixteen slots are achieved by creating vertically penetrating rectangular slots on the first copper layer. Each of the sixteen slots corresponds to one of the sixteen output ports of the substrate integrated waveguide feed network, with the output port of the substrate integrated waveguide feed network being fully exposed at the corresponding slot. The sixteen slots serve as signal transmission channels between the substrate integrated waveguide feed network and the radiating network, transmitting the signals output from the sixteen output terminals of the substrate integrated waveguide feed network to the radiating network. The SICL feed network is disposed between the first dielectric substrate and the second dielectric substrate, with its upper surface attached to the lower surface of the first dielectric substrate and its lower surface attached to the upper surface of the second dielectric substrate.The SICL feed network includes a 1-to-32 power divider and sixteen phase delay lines. The 1-to-32 power divider has one input port and thirty-two output ports. It splits a single TEM-mode signal input to its input port into thirty-two TEM-mode signals, which are then output one-to-one from each of its thirty-two output ports. The input port of the 1-to-32 power divider is positioned opposite the input port of the substrate integrated waveguide feed network. The thirty-two output ports of the 1-to-32 power divider are arranged in a 4x8 grid. The sixteen output ports of the substrate integrated waveguide feed network... The output ports are arranged in a 4x4 grid, with rows along the front-to-back direction and columns along the left-to-right direction. The 8 output ports in the k-th row of the 1-to-32 power divider are grouped in pairs from left to right, k = 1, 2, 3, 4. Therefore, the 1-to-32 power divider has 16 groups of output ports arranged in a 4x4 grid. The output port group in the h-th row and j-th column of the 1-to-32 power divider corresponds to the output port in the h-th row and j-th column of the substrate integrated waveguide feed network, h = 1, 2, 3, 4, j = 1, 2, 3, 4. The output port of the substrate integrated waveguide feed network is located between two output ports of the 1-to-32 power divider. The upper surfaces of the sixteen phase delay lines are attached to the lower surface of the first dielectric substrate, and the lower surfaces are attached to the upper surface of the second dielectric substrate. One end of each of the sixteen phase delay lines is located in the 1-to-32 power divider in the columns 1-row 2-column, 1-row 4-column, 1-row 6-column, 1-row 8-column, 2-row 2-column, 2-row 4-column, 2-row 6-column, 2-row 8-column, 3 ... The sixteen output ports in rows 2, 3, 4, 6, 8, 2, 4, 6, and 8 are connected one-to-one. Each phase delay line is used to delay the TEM mode signal output from the output port of the 1 to 32 power divider by 180 degrees before outputting it at the other end. The other end of the phase delay line connecting the output port in row m and column n of the 1 to 32 power divider to the output port in row m and column n+1 forms a pair of differential output terminals for differential power feeding, where m = 1, 2, 3, 4.n = 1, 3, 5, 7. The sixteen output ports located in the first row, first column; the first row, third column; the first row, fifth column; the first row, seventh column; the second row, first column; the second row, third column; the second row, fifth column; the second row, seventh column; the third row, first column; the third row, third column; the third row, fifth column; the third row, seventh column; the fourth row, first column; the fourth row, third column; the fourth row, fifth column; and the fourth row, seventh column, along with the other ends of the sixteen phase delay lines, constitute the 32 output ports of the SICL power supply network. That is, the SICL power supply network has 16 pairs of differential output ports, and the input port of the one-to-thirty-two power divider is the input port of the SICL power supply network. The thirty-two first metallized vias penetrate the first dielectric substrate and the first copper layer vertically. Each pair of first metallized vias forms a group, meaning the thirty-two first metallized vias comprise sixteen groups, each group consisting of two first metallized vias. These sixteen groups correspond one-to-one with the sixteen pairs of differential output ports of the SICL feed network. In a corresponding pair of differential output ports of the SICL feed network, the lower surfaces of the two first metallized vias in that group are aligned with the two... The output ports are connected one-to-one. Sixteen sets of first metallized vias serve as signal transmission channels between the SICL feed network and the radiation network, transmitting the differential signals generated by the sixteen pairs of differential output ports of the SICL feed network to the radiation network. Each feed reflection cavity consists of six second metallized vias penetrating vertically through the first copper layer, the first dielectric substrate, the second dielectric substrate, and the second copper layer. The six second metallized vias of each feed reflection cavity are spaced apart to form a semi-circle. Thirty-two feed reflection cavities correspond one-to-one with thirty-two first metallized vias. A corresponding feed reflection cavity corresponds to a first metallized via. The six second metallized vias of the radiating cavity surround the first metallized via and do not contact the first metallized via, so as to ensure that the energy of the first metallized via does not dissipate when transmitting TEM mode signals, and to ensure that the TEM mode signals can smoothly enter the radiation network; the radiation network includes a third dielectric plate and sixteen radiation units. The third dielectric plate is a rectangular plate, which is stacked on top of the first dielectric plate. Each radiation unit includes a set of magnetic dipoles, a third metallized via, a fourth metallized via, a first via reflection cavity, a second via reflection cavity, four copper-clad patches, a first elongated copper-clad probe, a second elongated copper-clad probe, and a radiation reflection cavity;Four copper-clad patches are attached to the upper surface of the third dielectric substrate and are evenly spaced in two rows and two columns, with the rows along the front-to-back direction and the columns along the left-to-right direction. The copper-clad patch located in the first row and first column is called the first copper-clad patch, the copper-clad patch located in the first row and second column is called the second copper-clad patch, the copper-clad patch located in the second row and first column is called the third copper-clad patch, and the copper-clad patch located in the second row and second column is called the fourth copper-clad patch. The first copper-clad patch includes a first rectangular metal block and a second rectangular metal block. The second rectangular metal block is located in front of the first rectangular metal block, and the left end face of the second rectangular metal block is flush with the left end face of the first rectangular metal block. The rear end face of the rectangular metal block is connected to and in contact with the front end face of the first rectangular metal block. The second copper-clad patch and the first copper-clad patch are symmetrical from left to right. The third copper-clad patch and the first copper-clad patch are symmetrical from front to back. The second copper-clad patch and the fourth copper-clad patch are symmetrical from front to back. The third copper-clad patch and the fourth copper-clad patch are symmetrical from left to right. The lines of symmetry between the second and first copper-clad patches and the lines of symmetry between the third and fourth copper-clad patches are collinear, and this line is called the first line of symmetry. The lines of symmetry between the third and first copper-clad patches and the lines of symmetry between the third and fourth copper-clad patches are collinear, and these lines are called the first line of symmetry. The front and rear symmetry lines of the second copper-clad patch are located on the same straight line, which is called the second symmetry line. The third metallized via is located on the right side of the second rectangular metal block of the first copper-clad patch and on the left side of the portion of the second copper-clad patch symmetrical to the second rectangular metal block. The third metallized via penetrates the third dielectric substrate vertically. The center of the upper end face of the third metallized via is located on the first symmetry line. The front end of the third metallized via is located in front of the plane containing the front end face of the second rectangular metal block, and the rear end of the third metallized via is located in front of the plane containing the rear end face of the second rectangular metal block and the plane containing the front end face of the second rectangular metal block. On the rear side, the first elongated copper-clad probe is attached to the upper surface of the third dielectric substrate and is located between the first copper-clad patch and the second copper-clad patch. The front end of the first elongated copper-clad probe is connected to the rear end of the upper end face of the third metallized via. The rear end of the first elongated copper-clad probe is located in front of the plane containing the rear end face of the first rectangular metal block and behind the plane containing the front end face of the first rectangular metal block. The distance from the left end face of the first elongated copper-clad probe to the right end face of the first rectangular metal block is equal to the distance from the right end face of the first elongated copper-clad probe to the left end face of the portion of the second copper-clad patch that is symmetrical to the first rectangular metal block.The fourth metallized via and the third metallized via are symmetrical about the front and back with respect to the second line of symmetry. The second elongated copper-clad probe and the first elongated copper-clad probe are symmetrical about the front and back with respect to the second line of symmetry. The magnetic dipole includes four metallized vias, which are respectively designated as the sixth, seventh, eighth, and ninth metallized vias. The sixth metallized via sequentially penetrates the first copper-clad patch and the third dielectric substrate. The sixth metallized via is located at the lower right corner of the first copper-clad patch, and the central axis of the sixth metallized via is parallel to the... The distance between the right end faces of the first copper-clad patch is equal to the distance between the central axis of the sixth metallized via and the rear end face of the first copper-clad patch. The seventh metallized via and the sixth metallized via are symmetrical about left and right with respect to the first line of symmetry. The eighth metallized via and the sixth metallized via are symmetrical about front and back with respect to the second line of symmetry. The seventh metallized via and the ninth metallized via are symmetrical about front and back with respect to the second line of symmetry. The first via-hole reflective cavity includes seven tenth metallized vias, all of which penetrate the third dielectric substrate vertically. The apertures are spaced around the front, left, and right sides of the third metallized via, forming a semicircle. The seven tenth metallized vias do not contact the first copper-clad patch, the second copper-clad patch, or the third metallized via. The second via-cavity reflection cavity and the first via-cavity reflection cavity are symmetrical about the second line of symmetry. The radiation reflection cavity is composed of multiple fifth metallized vias, which penetrate the third dielectric substrate vertically. These fifth metallized vias are spaced apart and form a square area. The system includes a magnetic dipole, a third metallized via, a fourth metallized via, a first via-cavity reflection cavity, a second via-cavity reflection cavity, four copper-clad patches, and the tenth metallized via. A long strip copper-clad probe and a second long strip copper-clad probe are both located within the square area, and the left-right symmetry line of the square area coincides with the first symmetry line, and the front-back symmetry line coincides with the second symmetry line; sixteen radiating units are distributed in 4 rows and 4 columns on the third dielectric substrate, and the interval between two adjacent radiating units in the same row and two adjacent radiating units in the same column is 18mm; the sixteen slots of the feed layer correspond one-to-one with the sixteen radiating units of the radiating layer, and in a corresponding slot and a radiating unit, the first symmetry line of the radiating unit is located directly above the left-right symmetry line of the slot.Each radiating element has a third metallized via and a fourth metallized via forming a pair of differential input channels. The radiating network has sixteen pairs of differential input channels, each pair corresponding to one of sixteen sets of first metallized vias. In a corresponding pair of differential input channels and a set of first metallized vias, the two first metallized vias of the set of first metallized vias are located directly below the third and fourth metallized vias of the pair of differential input channels. The lower end face of the third metallized via of the pair of differential input channels is connected to the upper end face of one of the first metallized vias located below it, and the two are coaxial. The lower end face of the fourth metallized via of the pair of differential input channels is connected to the upper end face of another first metallized via located below it, and the two are coaxial. In this structure, the SICL feed network is almost completely embedded inside the substrate integrated waveguide feed network. Therefore, from the overall structural perspective, only the size of one feed network is used, which is a significant size advantage compared to existing dual-polarized antennas that require two feed networks. Furthermore, since the SICL feed network transmits TEM mode signals and the substrate integrated waveguide feed network transmits TE10 mode signals, there is extremely high isolation between the two modes. This not only ensures the feasibility of combining two feed networks into one in a dual-mode feed network but also prevents significant coupling between energy sources. Additionally, when the radiating element receives both TE10 and TEM mode signals from the dual-mode feed network, it transmits the signals differentially to the four copper patches. When one mode signal is input into the radiating network, the other mode signal is located on the line of symmetry of the magnetic current at the input port of the radiating network, thus ensuring extremely high cross-polarization. Moreover, the use of a dipole structure design for the radiating element and differential excitation ensures the symmetry of the radiation pattern.

[0008] The first, second, and third dielectric plates are all 89.5 mm long in the left-right direction and 89.5 mm long in the front-back direction. The thickness of the first dielectric plate is 0.508 mm, the thickness of the second dielectric plate is 0.508 mm, and the thickness of the third dielectric plate is 1.524 mm. The slotted gap is 8.8 mm long in the front-back direction and 0.1 mm wide in the left-right direction. The first rectangular metal block is 4.8 mm long in the left-right direction and 3.8 mm long in the front-back direction. The second rectangular metal block is 3.8 mm long in the left-right direction and 1 mm long in the front-back direction. The rear end face of the first rectangular metal block is parallel to the first line of symmetry and the distance between them is 0.3 mm. The right end face of the first rectangular metal block is parallel to the second line of symmetry and the distance between them is 0.3 mm. The central axis of the third metallized through hole is... The distance between the rear end faces of the second rectangular metal block is 0.92 mm. The length of the first elongated copper-clad probe in the front-to-back direction is 3.74 mm, and the width in the left-to-right direction is 0.34 mm. The distance between the central axis of the sixth metallized via and the right end face of the first copper-clad patch is equal to the distance between the central axis of the sixth metallized via and the rear end face of the first copper-clad patch, both being 0.4 mm. The distance between the central axis of the tenth metallized via and the central axis of the third metallized via is 0.84 mm. The diameters of the first, third, and fourth metallized vias are all 0.4 mm. The diameters of the fifth, sixth, seventh, eighth, and ninth metallized vias are all 0.5 mm. The diameters of the second and tenth metallized vias are both 0.3 mm.

[0009] Compared with existing technologies, the advantages of this invention are that it uses a hybrid feeding network based on substrate integrated waveguide and SICL feeding structure to realize a dual-mode feeding network, and a radiating network based on dipole structure to realize a radiating network. The dual-mode feeding network combines the substrate integrated waveguide feeding network and SICL feeding network, which not only maintains extremely high isolation, but also has a great size advantage over existing dual-polarized antennas fed by two independent feeding networks. At the same time, the radiating network is designed with dipole structure combined with differential excitation method, which ensures both extremely high cross-polarization level and symmetry of radiation pattern. Thus, this invention has a low profile, high isolation, high beam amplitude and phase stability, and can meet the application requirements of high gain and high isolation in microwave communication links. Attached Figure Description

[0010] Figure 1This is a perspective view of the substrate-integrated dual-polarized antenna based on a composite mode transmission line according to the present invention.

[0011] Figure 2 This is an exploded view of the substrate-integrated dual-polarized antenna based on a composite mode transmission line according to the present invention.

[0012] Figure 3 This is a perspective view of the dual-mode feed network of the substrate-integrated dual-polarized antenna based on a composite mode transmission line according to the present invention.

[0013] Figure 4 An exploded view of the dual-mode feed network of the substrate-integrated dual-polarized antenna based on a composite mode transmission line according to the present invention.

[0014] Figure 5 This is a schematic diagram of the substrate integrated waveguide feed network and SICL feed network of the dual-mode feed network of the substrate integrated dual-polarized antenna based on composite mode transmission line of the present invention.

[0015] Figure 6 This is a three-dimensional view of the radiation network of the substrate-integrated dual-polarized antenna based on a composite mode transmission line according to the present invention.

[0016] Figure 7 This is a top view of the radiating network of the substrate-integrated dual-polarized antenna based on a composite mode transmission line according to the present invention.

[0017] Figure 8 This is a schematic diagram of the radiating element of the radiating network of the substrate-integrated dual-polarized antenna based on composite mode transmission lines according to the present invention.

[0018] Figure 9 The simulation results of the radiating element of the substrate-integrated dual-polarized antenna based on composite mode transmission lines of the present invention are shown in the figure.

[0019] Figure 10 The figure shows the simulation results of the dual-mode feed network of the substrate-integrated dual-polarized antenna based on the composite mode transmission line of the present invention.

[0020] Figure 11 The simulation results of the substrate-integrated dual-polarized antenna based on composite mode transmission lines of the present invention are shown in the figure.

[0021] Figure 12 The substrate-integrated dual-polarized antenna based on composite mode transmission lines of the present invention is oriented at a frequency of 14.15 GHz. Figure 1 ;

[0022] Figure 13 The substrate-integrated dual-polarized antenna based on composite mode transmission lines of the present invention is oriented at a frequency of 14.15 GHz. Figure 2 . Detailed Implementation

[0023] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments.

[0024] Example: Figure 1 and Figure 2 As shown, a substrate-integrated dual-polarized antenna based on a composite mode transmission line includes a dual-mode feed network 1 and a radiating network 2 stacked sequentially from bottom to top. The dual-mode feed network 1 is used to receive TE10 mode signals and TEM mode signals, and transmits the TE10 mode signals and TEM mode signals to the radiating network 2. The radiating network 2 is used to radiate the TE10 mode signals and TEM mode signals transmitted from the dual-mode feed network 1 to free space. The dual-mode feed network 1 is implemented using a hybrid feed network based on a substrate-integrated waveguide and SICL feed structure; the radiating network 2 is implemented using a radiating network 2 based on a dipole structure.

[0025] like Figures 3 to 5 As shown, in this embodiment, the dual-mode feed network 1 includes two rectangular dielectric substrates, a substrate integrated waveguide feed network, an SICL feed network, sixteen slotted gaps 3, thirty-two first metallized vias 4, and thirty-two feed reflection cavities. The two rectangular dielectric substrates are stacked vertically, and are referred to as the first dielectric substrate 5 and the second dielectric substrate 6 from top to bottom. The length direction of the first dielectric substrate 5 and the second dielectric substrate 6 is taken as the left-right direction, the width direction as the front-back direction, and the thickness direction as the up-down direction. A first copper layer 7 is attached to the upper surface of the first dielectric substrate 5, and a second copper layer 8 is attached to the lower surface of the second dielectric substrate 6. The size of the first copper layer 7 is the same as that of the upper surface of the first dielectric substrate 5, and the size of the second copper layer 8 is the same as that of the upper surface of the first dielectric substrate 5. The size is the same as the lower surface of the second dielectric substrate 6. The substrate integrated waveguide feed network is composed of a 1-to-16 power divider 9, which has one input port and sixteen output ports. The 1-to-16 power divider 9 is used to split one TE10 mode signal input to its input port into sixteen TE10 mode signals and output them one-to-one from its sixteen output ports. The input port of the 1-to-16 power divider 9 is the input port of the substrate integrated waveguide feed network, and the sixteen output ports of the 1-to-16 power divider 9 are the sixteen output ports of the substrate integrated waveguide feed network. The sixteen output ports of the substrate integrated waveguide feed network extend to the upper surface of the first dielectric substrate 5.

[0026] The sixteen slots 3 are achieved by opening rectangular slots that run vertically through the first copper layer 7. The sixteen slots 3 correspond one-to-one with the sixteen output ports of the substrate integrated waveguide feed network. In the corresponding slot 3, the output port of the substrate integrated waveguide feed network is fully exposed at the slot 3. The sixteen slots 3 serve as signal transmission channels between the substrate integrated waveguide feed network and the radiation network 2, and are used to transmit the signals output from the sixteen output terminals of the substrate integrated waveguide feed network to the radiation network 2.

[0027] The SICL feed network is disposed between the first dielectric substrate 5 and the second dielectric substrate 6, with its upper surface attached to the lower surface of the first dielectric substrate 5 and its lower surface attached to the upper surface of the second dielectric substrate 6. The SICL feed network includes a 1-to-32 power divider 10 and sixteen phase delay lines 11. The 1-to-32 power divider 10 has one input port and thirty-two output ports. The 1-to-32 power divider 10 is used to split one TEM-mode signal input to its input port into thirty-two TEM-mode signals and output them one-to-one from its thirty-two output ports. The input port of the 1-to-32 power divider 10 corresponds to the input port of the substrate integrated waveguide feed network. The 32 output ports of the 1-to-32 power divider 10 are arranged in a 4x8 grid, and the 16 output ports of the substrate integrated waveguide feed network are arranged in a 4x4 grid, with the rows along the front-to-back direction and the columns along the left-to-right direction. The 8th output port in the k-th row of the 1-to-32 power divider 10 is grouped into two groups from left to right, k = 1, 2, 3, 4. Therefore, the 1-to-32 power divider 10 has 16 groups of output ports arranged in a 4x4 grid. The group of output ports in the h-th row and j-th column of the 1-to-32 power divider 10 corresponds to the group of output ports in the h-th row and j-th column of the substrate integrated waveguide feed network, h = 1, 2, 3, 4. For j = 1, 2, 3, 4, a set of output ports of the 1-to-32 power divider 10 and an output port of the substrate integrated waveguide feed network are located in the middle of the two output ports of the set of output ports of the 1-to-32 power divider 10. The upper surface of the sixteen phase delay lines 11 is attached to the lower surface of the first dielectric substrate 5, and the lower surface is attached to the upper surface of the second dielectric substrate 6. One end of the sixteen phase delay lines 11 is connected to the output ports of the 1-to-32 power divider 10 located in the 1st row and 2nd column, 1st row and 4th column, 1st row and 6th column, 1st row and 8th column, 2nd row and 2nd column, 2nd row and 4th column, and 2nd row and 6th column. The sixteen output ports in rows 2 and 8, rows 3 and 2, rows 3 and 4, rows 3 and 6, rows 3 and 8, rows 4 and 6, and rows 4 and 8 are connected one-to-one. Each phase delay line 11 is used to generate a 180-degree phase delay on the TEM-mode signal output from the output port of the 1-to-32 power divider 10 connected to it before outputting it at the other end. The other end of the phase delay line 11 connecting the output port in row m and column n of the 1-to-32 power divider 10 to the output port in row m and column n+1 constitutes a pair of differential output terminals for differential power feeding, where m = 1, 2, 3, 4.The sixteen output ports located in the first row and first column, the first row and third column, the first row and fifth column, the first row and seventh column, the second row and first column, the second row and third column, the second row and fifth column, the second row and seventh column, the third row and first column, the third row and third column, the third row and fifth column, the third row and seventh column, the fourth row and first column, the fourth row and seventh column, and the other end of the sixteen phase delay lines 11 are the 32 output ports of the SICL power supply network. That is, the SICL power supply network has 16 pairs of differential output ports, and the input port of the one-to-thirty-two power divider 10 is the input port of the SICL power supply network.

[0028] Thirty-two first metallized vias 4 penetrate the first dielectric substrate 5 and the first copper layer 7 vertically. Each pair of first metallized vias 4 forms a group, meaning the thirty-two first metallized vias 4 include sixteen groups of first metallized vias 4. Each group of first metallized vias 4 includes two first metallized vias 4. The sixteen groups of first metallized vias 4 correspond one-to-one with the sixteen pairs of differential output ports of the SICL feed network. In a corresponding group of first metallized vias 4 and a pair of differential output ports of the SICL feed network, the lower surfaces of the two first metallized vias 4 in that group are connected one-to-one with the two output ports of that pair of differential output ports of the SICL feed network. The sixteen groups of first metallized vias 4 serve as signal transmission channels between the SICL feed network and the radiation network 2, used to transmit the differential signals generated by the sixteen pairs of differential output ports of the SICL feed network to the radiation network 2.

[0029] Each feed reflector consists of six second metallized vias 12 that penetrate vertically through the first copper layer 7, the first dielectric substrate 5, the second dielectric substrate 6, and the second copper layer 8. The six second metallized vias 12 of each feed reflector are spaced apart and arranged in a semi-circle. The thirty-two feed reflectors correspond one-to-one with the thirty-two first metallized vias 4. In a corresponding feed reflector and a first metallized via 4, the six second metallized vias 12 of the feed reflector surround the first metallized via 4 and do not contact the first metallized via 4, so as to ensure that the energy of the first metallized via 4 does not dissipate when transmitting TEM mode signals, and to ensure that the TEM mode signals can smoothly enter the radiation network 2.

[0030] like Figures 6 to 8As shown, the radiation network 2 includes a third dielectric substrate 13 and sixteen radiation units 14. The third dielectric substrate 13 is a rectangular plate, stacked on top of the first dielectric substrate 5. Each radiation unit 14 includes a set of magnetic dipoles, a third metallized via 15, a fourth metallized via 16, a first via reflection cavity, a second via reflection cavity, four copper-clad patches, a first elongated copper-clad probe 17, a second elongated copper-clad probe 18, and a radiation reflection cavity. The four copper-clad patches are attached to the upper surface of the third dielectric substrate 13 and are evenly spaced in two rows and two columns. The copper patch located in the first row and first column is designated as the first copper patch 19, the copper patch located in the first row and second column is designated as the second copper patch 20, the copper patch located in the second row and first column is designated as the third copper patch 21, and the copper patch located in the second row and second column is designated as the fourth copper patch 22. The first copper patch 19 includes a first rectangular metal block 23 and a second rectangular metal block 24. The second rectangular metal block 24 is located in front of the first rectangular metal block 23, and the left end face of the second rectangular metal block 24 is adjacent to the first rectangular metal block 23. The left end face of the first rectangular metal block 23 is flush with the left end face of the second rectangular metal block 24. The rear end face of the second rectangular metal block 24 is connected to and in contact with the front end face of the first rectangular metal block 23. The second copper-clad patch 20 and the first copper-clad patch 19 are symmetrical from left to right. The third copper-clad patch 21 and the first copper-clad patch 19 are symmetrical from front to back. The second copper-clad patch 20 and the fourth copper-clad patch 22 are symmetrical from front to back. The third copper-clad patch 21 and the fourth copper-clad patch 22 are symmetrical from left to right. The lines of symmetry between the second copper-clad patch 20 and the first copper-clad patch 19 and the lines of symmetry between the third copper-clad patch 21 and the fourth copper-clad patch 22 are on the same straight line. The straight line is called the first symmetry line 25. The front and rear symmetry lines of the third copper patch 21 and the first copper patch 19 are on the same straight line as the front and rear symmetry lines of the fourth copper patch 22 and the second copper patch 20. This straight line is called the second symmetry line 26. The third metallized via 15 is located to the right of the second rectangular metal block 24 of the first copper patch 19 and to the left of the part of the second copper patch 20 that is symmetrical with the second rectangular metal block 24. The third metallized via 15 penetrates the third dielectric substrate 13 vertically. The center of the upper end face of the third metallized via 15 is located on the first symmetry line 25.The front end of the third metallized via 15 is located in front of the plane containing the front end face of the second rectangular metal block 24. The rear end of the third metallized via 15 is located in front of the plane containing the rear end face of the second rectangular metal block 24 and behind the plane containing the front end face of the second rectangular metal block 24. The first elongated copper-clad probe 17 is attached to the upper surface of the third dielectric substrate 13 and is located between the first copper-clad patch 19 and the second copper-clad patch 20. The front end of the first elongated copper-clad probe 17 is connected to the rear end of the upper end face of the third metallized via 15. The rear end of the first elongated copper-clad probe 17 is located in front of the plane containing the rear end face of the first rectangular metal block 23 and behind the plane containing the front end face of the first rectangular metal block 23. The distance from the left end face of the first elongated copper-clad probe 17 to the right end face of the first rectangular metal block 23 is equal to the distance from the right end face of the first elongated copper-clad probe 17 to the left end face of the part of the second copper-clad patch 20 that is symmetrical to the first rectangular metal block 23.The fourth metallized via 16 and the third metallized via 15 are symmetrical about the front and back with respect to the second symmetry line 26. The second elongated copper-clad probe 18 and the first elongated copper-clad probe 17 are also symmetrical about the front and back with respect to the second symmetry line 26. The magnetic dipole includes four metallized vias, which are respectively designated as the sixth metallized via 27, the seventh metallized via 28, the eighth metallized via 29, and the ninth metallized via 30. The sixth metallized via 27 passes through the first copper-clad patch 19 and the third dielectric substrate 13 in sequence. Located at the lower right corner of the first copper-clad patch 19, the distance between the central axis of the sixth metallized via 27 and the right end face of the first copper-clad patch 19 is equal to the distance between the central axis of the sixth metallized via 27 and the rear end face of the first copper-clad patch 19. The seventh metallized via 28 and the sixth metallized via 27 are symmetrical about left and right with respect to the first line of symmetry 25. The eighth metallized via 29 and the sixth metallized via 27 are symmetrical about front and back with respect to the second line of symmetry 26. The seventh metallized via 28 and the ninth metallized via 30 are symmetrical about the second line of symmetry 26. The first through-hole reflective cavity is symmetrical front to back, comprising seven tenth metallized through-holes 31, each penetrating vertically through the third dielectric substrate 13. These seven tenth metallized through-holes 31 are spaced around the front, left, and right sides of the third metallized through-hole 15, forming a semicircle. The seven tenth metallized through-holes 31 do not contact the first copper-clad patch 19, the second copper-clad patch 20, or the third metallized through-hole 15. The second through-hole reflective cavity is symmetrical to the first through-hole reflective cavity with respect to the second line of symmetry 26. The radiation reflective cavity consists of multiple fifth metallized... The system consists of vias 32, with multiple fifth metallized vias 32 penetrating the third dielectric substrate 13 vertically. The multiple fifth metallized vias 32 are spaced apart to form a square region. A set of magnetic dipoles, third metallized vias 15, fourth metallized vias 16, first via reflector cavity, second via reflector cavity, four copper-clad patches, first elongated copper-clad probe 17, and second elongated copper-clad probe 18 are all located within this square region. Furthermore, the left-right symmetry line of this square region coincides with the first symmetry line 25, and the front-back symmetry line coincides with the second symmetry line 26.

[0031] Sixteen radiating units 14 are distributed in 4 rows and 4 columns on the third dielectric substrate 13. The interval between two adjacent radiating units 14 in the same row and two adjacent radiating units 14 in the same column is 18 mm. The sixteen slots 3 of the feed layer correspond one-to-one with the sixteen radiating units 14 of the radiating layer. In a corresponding slot 3 and a radiating unit 14, the first symmetry line 25 of the radiating unit 14 is located directly above the symmetry line of the slot 3 in the left-right direction.

[0032] Each radiating element 14 has a third metallized via 15 and a fourth metallized via 16 forming a pair of differential input channels. The radiating network 2 has sixteen pairs of differential input channels, each pair corresponding to one of sixteen sets of first metallized vias 4. In a corresponding pair of differential input channels and a set of first metallized vias 4, the two first metallized vias 4 in the set of first metallized vias 4 are located directly below the third metallized via 15 and the fourth metallized via 16 of the pair of differential input channels. The lower end face of the third metallized via 15 of the pair of differential input channels is connected to the upper end face of one of the first metallized vias 4 located below it, and the two are coaxial. The lower end face of the fourth metallized via 16 of the pair of differential input channels is connected to the upper end face of another first metallized via 4 located below it, and the two are coaxial.

[0033] In this embodiment, the first dielectric plate 5, the second dielectric plate 6, and the third dielectric plate 13 are all 89.5 mm long in the left-right direction and 89.5 mm long in the front-back direction. The thickness of the first dielectric plate 5 is 0.508 mm, the thickness of the second dielectric plate 6 is 0.508 mm, and the thickness of the third dielectric plate 13 is 1.524 mm. The slot 3 is 8.8 mm long in the front-back direction and 0.1 mm wide in the left-right direction. The first rectangular metal block 23 is 4.8 mm long in the left-right direction and 3.8 mm long in the front-back direction. The second rectangular metal block 24 is 3.8 mm long in the left-right direction and 1 mm long in the front-back direction. The rear end face of the first rectangular metal block 23 is parallel to the first symmetry line 25 and the distance between them is 0.3 mm. The right end face of the first rectangular metal block 23 is parallel to the second symmetry line 26 and the distance between them is 0.3 mm. The central axis of the third metallized through hole 15 is... The distance between the rear end faces of the second rectangular metal block 24 is 0.92 mm. The length of the first elongated copper-clad probe 17 in the front-to-back direction is 3.74 mm, and the width in the left-to-right direction is 0.34 mm. The distance between the central axis of the sixth metallized via 27 and the right end face of the first copper-clad patch 19 is equal to the distance between the central axis of the sixth metallized via 27 and the rear end face of the first copper-clad patch 19, both being 0.4 mm. The distance between the central axis of the tenth metallized via 31 and the central axis of the third metallized via 15 is 0.84 mm. The diameters of the first metallized via 4, the third metallized via 15, and the fourth metallized via 16 are all 0.4 mm. The diameters of the fifth metallized via 32, the sixth metallized via 27, the seventh metallized via 28, the eighth metallized via 29, and the ninth metallized via 30 are all 0.5 mm. The diameters of the second metallized via 12 and the tenth metallized via 31 are both 0.3 mm.

[0034] The working principle of the substrate-integrated dual-polarized antenna based on composite mode transmission lines in this embodiment is as follows: When the TE10 mode signal enters the dual-mode feed network from the input port of the substrate-integrated waveguide feed network, the 1-to-16 power divider 9 converts the TE10 mode signal into sixteen TE10 mode signals and outputs them at its 16 output ports. Since the second dielectric substrate 5 of the dual-mode feed network is tightly bonded to the third dielectric substrate 136 of the radiating network, the sixteen TE10 mode signals enter the sixteen radiating elements 14 one-to-one through the sixteen slots 3. Under the action of the slots through which each TE10 mode signal passes, it differentially excites a set of magnetic dipoles and four copper-clad patches in the radiating element 14 it enters. At this time, the four copper-clad patches in each radiating element 14 act as electric dipoles, thereby each radiating element 14 transmits the T10 mode signal to its location. The E10 mode signal propagates into free space. When the TEM mode signal enters the dual-mode feed network from the input port of the SICL feed network, sixteen pairs of differential TEM mode signals are generated through the SICL feed network. The sixteen pairs of differential TEM mode signals enter the sixteen radiation units 14 one by one through 16 sets of first metallized vias. At this time, at each radiation unit 14, a pair of differential TEM mode signals are transmitted to the first elongated copper-clad probe 17 and the second elongated copper-clad probe 18 through the third metallized via 15 and the fourth metallized via 16. The pair of differential TEM mode signals on the first elongated copper-clad probe 17 and the second elongated copper-clad probe 18 jointly excite the four copper-clad patches in the radiation unit 14. The four copper-clad patches are matched with free space, so that each radiation unit 14 propagates the TEM mode signal transmitted thereto into free space.

[0035] To verify the performance of the substrate-integrated dual-polarized antenna based on a composite mode transmission line, simulations were performed on the antenna. The simulation results of the radiating element of the substrate-integrated dual-polarized antenna based on a composite mode transmission line are shown in the figure below. Figure 9 As shown in the figure, the simulation results of the dual-mode feed network of the substrate-integrated dual-polarized antenna based on the composite mode transmission line of the present invention are as follows. Figure 10 As shown in the figure, the simulation results of the substrate-integrated dual-polarized antenna based on composite mode transmission lines of the present invention are as follows. Figure 11 As shown, the substrate-integrated dual-polarized antenna based on composite mode transmission lines of the present invention has a directional characteristic at the 14.15GHz frequency point. Figure 1 like Figure 12 As shown, the substrate-integrated dual-polarized antenna based on composite mode transmission lines of the present invention has a directional characteristic at the 14.15GHz frequency point. Figure 2 like Figure 13 As shown.

[0036] Figure 9 In the middle, |S 1:1,1:1|S represents the return loss when the TEM-mode signal is input to the radiating element. 1:2,1:2 |S represents the return loss when a TE10 mode signal is input to the radiating element. 1:2,1:1 | This represents the isolation between the two modes when both modes are simultaneously input to the radiating element. It can be seen that the isolation between the two ports reaches below -30dB in the application frequency band, which is an extremely high level of isolation.

[0037] Figure 10 In the middle, |S 11 |S represents the return loss at the input port of the SICL feeder network. 22 |S represents the return loss at the input port of the substrate-integrated waveguide feed network. 21 Analyze the isolation between the input ports of the SICL feed network and the substrate integrated waveguide feed network. Figure 10 As can be seen, the isolation between the two input ports reaches below -70dB in the application frequency band, which is an extremely high level of isolation.

[0038] Figure 11 In the middle, |S 11 |S represents the return loss at the input port of the substrate-integrated waveguide feed network. 22 |S represents the return loss at the input port of the SICL feeder network. 12 The isolation between the input ports of the substrate integrated waveguide feed network and the SICL feed network is shown. It can be seen that the isolation between the two input ports reaches below -40dB in the application frequency band, which has an extremely high isolation level.

[0039] Figure 12 In this process, the signal is input from the input port of the substrate-integrated waveguide feed network into the substrate-integrated dual-polarized antenna based on the composite mode transmission line of the present invention. Analysis Figure 12 As can be seen, the gain reaches over 20dBi and the cross-polarization reaches over 40dBi. This indicates that the substrate-integrated dual-polarized antenna based on composite mode transmission lines of this invention has an extremely high level of cross-polarization and maintains an extremely high level of symmetry in its radiation pattern.

[0040] Figure 13 In this process, the signal is input from the input port of the SICL feed network into the substrate-integrated dual-polarized antenna based on composite mode transmission lines of the present invention. Analysis Figure 13 As can be seen, the gain reaches over 20dBi and the cross-polarization reaches over 40dBi. This indicates that the substrate-integrated dual-polarized antenna based on composite mode transmission lines of this invention has an extremely high level of cross-polarization and maintains an extremely high level of symmetry in its radiation pattern.

[0041] In summary, the substrate-integrated dual-polarized antenna based on composite mode transmission lines of the present invention has a low profile, high isolation, and high beam amplitude and phase stability, which can meet the application requirements of high gain and high isolation in microwave communication links.

Claims

1. A substrate-integrated dual-polarized antenna based on a composite mode transmission line, comprising a dual-mode feed network and a radiating network stacked sequentially from bottom to top, wherein the dual-mode feed network is used to receive TE10 mode signals and TEM mode signals, and transmits the TE10 mode signals and TEM mode signals to the radiating network, and the radiating network is used to radiate the TE10 mode signals and TEM mode signals transmitted by the dual-mode feed network to free space, characterized in that... The dual-mode feed network is implemented using a hybrid feed network based on a substrate integrated waveguide and SICL feed structure; the radiation network is implemented using a radiation network based on a dipole structure; the dual-mode feed network includes two rectangular dielectric substrates, a substrate integrated waveguide feed network, and an SICL feed network. The two rectangular dielectric substrates are stacked vertically, and are referred to as the first dielectric substrate and the second dielectric substrate from top to bottom. The SICL feed network is disposed between the first dielectric substrate and the second dielectric substrate, with its upper surface attached to the lower surface of the first dielectric substrate and its lower surface attached to the upper surface of the second dielectric substrate; a first copper layer is attached to the upper surface of the first dielectric substrate, and a second copper layer is attached to the lower surface of the second dielectric substrate; the substrate integrated waveguide feed network is implemented using a plurality of metallized vias that penetrate vertically through the first dielectric substrate and the second dielectric substrate and surround the SICL feed network, and the plurality of metallized vias are connected to the first copper layer and the second copper layer.

2. The substrate-integrated dual-polarized antenna based on a composite mode transmission line according to claim 1, characterized in that... The dual-mode feed network further includes sixteen slotted gaps, thirty-two first metallized vias, and thirty-two feed reflection cavities. The length direction of the first dielectric substrate and the second dielectric substrate is taken as the left-right direction, the width direction as the front-back direction, and the thickness direction as the top-bottom direction. The size of the first copper layer is the same as the upper surface of the first dielectric substrate, and the size of the second copper layer is the same as the lower surface of the second dielectric substrate. The substrate integrated waveguide feed network is composed of a 1-to-16 power divider. This 1-to-16 power divider has one input port and sixteen output ports. The 1-to-16 power divider is used to split one TE10 mode signal input from its input port into sixteen TE10 mode signals, which are output one-to-one from each of its sixteen output ports. The input port of the 1-to-16 power divider is the input port of the substrate integrated waveguide feed network, and the sixteen output ports of the 1-to-16 power divider are the sixteen output ports of the substrate integrated waveguide feed network. The sixteen output ports of the substrate integrated waveguide feed network extend to the upper surface of the first dielectric substrate. The sixteen slots are achieved by creating vertically penetrating rectangular slots on the first copper layer. Each of the sixteen slots corresponds one-to-one with one of the sixteen output ports of the substrate integrated waveguide feed network. The corresponding slot is located at one output port of the substrate integrated waveguide feed network, where the output port is fully exposed. The sixteen slots serve as signal transmission channels between the substrate integrated waveguide feed network and the radiation network, transmitting the signals output from the sixteen output terminals of the substrate integrated waveguide feed network to the radiation network. The SICL feed network includes a 1-to-32 power divider and sixteen phase delay lines. The 1-to-32 power divider has one input port and thirty-two output ports. It splits a single TEM-mode signal input to its input port into thirty-two TEM-mode signals, which are then output one-to-one from each of its thirty-two output ports. The input port of the 1-to-32 power divider is positioned opposite the input port of the substrate integrated waveguide feed network. The thirty-two output ports of the 1-to-32 power divider are arranged in a 4x8 grid. The sixteen output ports of the substrate integrated waveguide feed network... The output ports are arranged in a 4x4 grid, with rows along the front-to-back direction and columns along the left-to-right direction. The 8 output ports in the k-th row of the 1-to-32 power divider are grouped in pairs from left to right, k=1, 2, 3, 4. Therefore, the 1-to-32 power divider has 16 groups of output ports arranged in a 4x4 grid. The output port group in the h-th row and j-th column of the 1-to-32 power divider corresponds to the output port in the h-th row and j-th column of the substrate integrated waveguide feed network, h=1, 2, 3, 4, j=1, 2, 3, 4. The output port of the substrate integrated waveguide feed network is located between two output ports of the 1-to-32 power divider. The upper surfaces of the sixteen phase delay lines are attached to the lower surface of the first dielectric substrate, and the lower surfaces are attached to the upper surface of the second dielectric substrate. One end of each of the sixteen phase delay lines is located in the 1-to-32 power divider in the columns 1-row 2-column, 1-row 4-column, 1-row 6-column, 1-row 8-column, 2-row 2-column, 2-row 4-column, 2-row 6-column, 2-row 8-column, 3 ... The sixteen output ports in rows 2, 3, 4, 6, 8, 2, 4, 6, and 8 are connected one-to-one. Each phase delay line is used to delay the TEM mode signal output from the output port of the 1-to-32 power divider by 180 degrees before outputting it at the other end. The other end of the phase delay line connecting the output port in row m and column n of the 1-to-32 power divider to the output port in row m+1 forms a pair of differential output terminals for differential power feeding, where m = 1, 2, 3, 4.n=1, 3, 5, 7. The sixteen output ports located in the first row and first column, the first row and third column, the first row and fifth column, the first row and seventh column, the second row and first column, the second row and third column, the second row and fifth column, the second row and seventh column, the third row and first column, the third row and third column, the third row and fifth column, the third row and seventh column, the fourth row and first column, the fourth row and third column, the fourth row and fifth column, and the fourth row and seventh column, and the other end of the sixteen phase delay lines are the 32 output ports of the SICL power supply network. That is, the SICL power supply network has 16 pairs of differential output ports, and the input port of the one-to-thirty-two power divider is the input port of the SICL power supply network. The thirty-two first metallized vias penetrate the first dielectric substrate and the first copper layer vertically. Each pair of the thirty-two first metallized vias forms a group, meaning the thirty-two first metallized vias comprise sixteen groups of first metallized vias. Each group of first metallized vias comprises two first metallized vias. These sixteen groups of first metallized vias correspond one-to-one with the sixteen pairs of differential output ports of the SICL feed network. In a corresponding group of first metallized vias and a pair of differential output ports of the SICL feed network, the lower surfaces of the two first metallized vias in that group are connected one-to-one with the two output ports of that pair of differential output ports of the SICL feed network. These sixteen groups of first metallized vias serve as signal transmission channels between the SICL feed network and the radiating network, transmitting the differential signals generated by the sixteen pairs of differential output ports of the SICL feed network to the radiating network. Each feed reflector consists of six second metallized vias that penetrate vertically through the first copper layer, the first dielectric substrate, the second dielectric substrate, and the second copper layer. The six second metallized vias of each feed reflector are spaced apart and arranged in a semi-circle. The thirty-two feed reflectors correspond one-to-one with the thirty-two first metallized vias. In a corresponding feed reflector and a first metallized via, the six second metallized vias of the feed reflector surround the first metallized via and do not contact it, so as to ensure that the energy of the first metallized via does not dissipate when transmitting TEM mode signals, and to ensure that the TEM mode signals can smoothly enter the radiation network. The described radiating network comprises a third dielectric substrate and sixteen radiating units. The third dielectric substrate is a rectangular plate stacked on top of the first dielectric substrate. Each radiating unit includes a set of magnetic dipoles, a third metallized via, a fourth metallized via, a first via reflection cavity, a second via reflection cavity, four copper-clad patches, a first elongated copper-clad probe, a second elongated copper-clad probe, and a radiation reflection cavity. The four copper-clad patches are attached to the upper surface of the third dielectric substrate and are evenly spaced in two rows and two columns, with the rows arranged along the front-to-back direction. Along the left-right direction, the copper patch located in the first row and first column is called the first copper patch, the copper patch located in the first row and second column is called the second copper patch, the copper patch located in the second row and first column is called the third copper patch, and the copper patch located in the second row and second column is called the fourth copper patch. The first copper patch includes a first rectangular metal block and a second rectangular metal block. The second rectangular metal block is located in front of the first rectangular metal block, and the left end face of the second rectangular metal block is flush with the left end face of the first rectangular metal block. The rear end face of the rectangular metal block is connected to and in contact with the front end face of the first rectangular metal block. The second copper-clad patch and the first copper-clad patch are symmetrical from left to right. The third copper-clad patch and the first copper-clad patch are symmetrical from front to back. The second copper-clad patch and the fourth copper-clad patch are symmetrical from front to back. The third copper-clad patch and the fourth copper-clad patch are symmetrical from left to right. The lines of symmetry between the second and first copper-clad patches and the lines of symmetry between the third and fourth copper-clad patches are collinear. The straight line is called the first symmetry line. The front-to-back symmetry line of the third copper-clad patch and the first copper-clad patch is on the same straight line as the front-to-back symmetry line of the fourth copper-clad patch and the second copper-clad patch. This straight line is called the second symmetry line. The third metallized via is located on the right side of the second rectangular metal block of the first copper-clad patch and on the left side of the part of the second copper-clad patch that is symmetrical to the second rectangular metal block. The third metallized via penetrates the third dielectric substrate vertically. The center of the upper end face of the third metallized via is located on the first symmetry line.The front end of the third metallized via is located in front of the plane containing the front end face of the second rectangular metal block. The rear end of the third metallized via is located in front of the plane containing the rear end face of the second rectangular metal block and behind the plane containing the front end face of the second rectangular metal block. The first elongated copper-clad probe is attached to the upper surface of the third dielectric substrate and is located between the first copper-clad patch and the second copper-clad patch. The front end of the first elongated copper-clad probe is connected to the rear end of the upper end face of the third metallized via. The rear end of the first elongated copper-clad probe is located in front of the plane containing the rear end face of the first rectangular metal block and behind the plane containing the front end face of the first rectangular metal block. The distance from the left end face of the first elongated copper-clad probe to the right end face of the first rectangular metal block is equal to the distance from the right end face of the first elongated copper-clad probe to the left end face of the portion of the second copper-clad patch that is symmetrical to the first rectangular metal block.The fourth metallized via and the third metallized via are symmetrical about front and back with respect to the second line of symmetry. The second elongated copper-clad probe and the first elongated copper-clad probe are symmetrical about front and back with respect to the second line of symmetry. The magnetic dipole includes four metallized vias, which are respectively designated as the sixth, seventh, eighth, and ninth metallized vias. The sixth metallized via sequentially penetrates the first copper-clad patch and the third dielectric substrate. The sixth metallized via is located at the lower right corner of the first copper-clad patch. The distance between the central axis of the sixth metallized via and the right end face of the first copper-clad patch is equal to the distance between the central axis of the sixth metallized via and the rear end face of the first copper-clad patch. The seventh metallized via and the sixth metallized via are symmetrical about left and right with respect to the first line of symmetry. The eighth metallized via and the sixth metallized via are symmetrical about front and back with respect to the second line of symmetry. The seventh metallized via and the ninth metallized via are symmetrical about front and back with respect to the second line of symmetry. The metallized vias are symmetrical about the front and back with respect to the second line of symmetry. The first via-reflective cavity includes seven tenth metallized vias, all of which penetrate the third dielectric substrate vertically. These seven tenth metallized vias are spaced around the front, left, and right sides of the third metallized via, forming a semicircle. The seven tenth metallized vias do not contact the first copper patch, the second copper patch, or the third metallized via. The second via-reflective cavity is symmetrical about the front and back with respect to the first via-reflective cavity with respect to the second line of symmetry. The radiation-reflecting cavity is composed of multiple fifth metallized vias, which penetrate the third dielectric substrate vertically. These fifth metallized vias are spaced about to form a square region. A set of magnetic dipoles, the third metallized via, the fourth metallized via, the first via-reflective cavity, the second via-reflective cavity, four copper patches, the first elongated copper probe, and the second elongated copper probe are all located within this square region. The left-right symmetry line of this square region coincides with the first line of symmetry, and the front-back symmetry line coincides with the second line of symmetry. Sixteen radiating units are arranged in 4 rows and 4 columns on the third dielectric plate. The interval between two adjacent radiating units in the same row and two adjacent radiating units in the same column is 18 mm. The sixteen slots of the dual-mode feed network correspond one-to-one with the sixteen radiating units of the radiating network. In a corresponding slot and a radiating unit, the first symmetry line in the radiating unit is located directly above the symmetry line of the slot along the left and right direction. Each radiating element has a third metallized via and a fourth metallized via forming a pair of differential input channels. The radiating network has sixteen pairs of differential input channels, each pair corresponding to one of sixteen sets of first metallized vias. In a corresponding pair of differential input channels and a set of first metallized vias, the two first metallized vias of the set of first metallized vias are located directly below the third and fourth metallized vias of the pair of differential input channels. The lower end face of the third metallized via of the pair of differential input channels is connected to the upper end face of one of the first metallized vias located below it, and the two are coaxial. The lower end face of the fourth metallized via of the pair of differential input channels is connected to the upper end face of another first metallized via located below it, and the two are coaxial.

3. A substrate-integrated dual-polarized antenna based on a composite mode transmission line according to claim 2, characterized in that... The first, second, and third dielectric plates are all 89.5 mm long in the left-right direction and 89.5 mm long in the front-back direction. The thickness of the first dielectric plate is 0.508 mm, the thickness of the second dielectric plate is 0.508 mm, and the thickness of the third dielectric plate is 1.524 mm. The slotted gap is 8.8 mm long in the front-back direction and 0.1 mm wide in the left-right direction. The first rectangular metal block is 4.8 mm long in the left-right direction and 3.8 mm long in the front-back direction. The second rectangular metal block is 3.8 mm long in the left-right direction and 1 mm long in the front-back direction. The rear end face of the first rectangular metal block is parallel to the first line of symmetry and the distance between them is 0.3 mm. The right end face of the first rectangular metal block is parallel to the second line of symmetry and the distance between them is 0.3 mm. The central axis of the third metallized through hole is... The distance between the rear end faces of the second rectangular metal block is 0.92 mm. The length of the first elongated copper-clad probe in the front-to-back direction is 3.74 mm, and the width in the left-to-right direction is 0.34 mm. The distance between the central axis of the sixth metallized via and the right end face of the first copper-clad patch is equal to the distance between the central axis of the sixth metallized via and the rear end face of the first copper-clad patch, both being 0.4 mm. The distance between the central axis of the tenth metallized via and the central axis of the third metallized via is 0.84 mm. The diameters of the first, third, and fourth metallized vias are all 0.4 mm. The diameters of the fifth, sixth, seventh, eighth, and ninth metallized vias are all 0.5 mm. The diameters of the second and tenth metallized vias are both 0.3 mm.

Images