An apparatus for improving the power handling capability of acoustic wave resonators and filters and multiplexers

Abstract

The application provides a device for improving the power capacity of an acoustic resonator, filter and multiplexer, belonging to the technical field of high-power bulk acoustic wave filters and multiplexers, comprising a silicon substrate, a support layer, a seed layer, a double-eared channel resonator structure and a protective cap; the sandwich structure is suspended in air through the support layer surrounding it; an air cavity is formed below the sandwich structure, the periphery of the air cavity is the support layer, the periphery of the upper air cavity is a copper wall, and the heat generated in the conversion process of acoustic energy and electric energy is dissipated in the maximum degree and at the fastest speed by using the copper wall, so that the power capacity of the filter and multiplexer is improved. The application solves the problem of low power capacity of the bulk acoustic wave resonator, filter and multiplexer.

Description

Technical Field

[0001] This invention belongs to the field of high-power bulk acoustic wave filters and multiplexers, and particularly relates to a device for improving the power capacity of acoustic resonators, filters and multiplexers. Background Technology

[0002] Thin-film bulk acoustic wave (BAS) resonators, as a novel type of filtering element, possess advantages such as small size, low loss, steep roll-off edge, high operating frequency, and ease of integration, and are widely used in the field of wireless communication. However, with the development of wireless communication, the power capacity requirements for BAS filters and multiplexers are increasing, making the power capacity of filtering elements a pressing issue. As is well known, BAS resonators have a sandwich structure, with a piezoelectric material (such as AlN, ScAlN, or PZT) in the middle, and metallic materials (such as Mo, W, or Cu) on the top and bottom sides; both sides of the sandwich structure are cavities. The working principle of a BAS resonator is that when an electric field is generated between the two electrodes, the piezoelectric material can convert some electrical energy into mechanical energy in the form of sound waves, with the sound waves propagating longitudinally in the sandwich structure and vice versa. During the conversion of sound and electrical energy, heat is generated. If this heat cannot be dissipated in time, it will significantly reduce the power capacity of the BAS filter and multiplexer. Summary of the Invention

[0003] In view of the above-mentioned shortcomings in the prior art, the present invention provides a device for improving the power capacity of acoustic resonators, filters and multiplexers, which dissipates the heat generated during the conversion of acoustic energy and electrical energy to the maximum extent and at the fastest speed, thereby improving the power capacity of filters and multiplexers.

[0004] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0005] This solution provides a device for improving the power capacity of acoustic resonators, filters and multiplexers, including a silicon substrate, a support layer, a seed layer, a binaural channel resonator structure, a protective cap, a first copper wall and a second copper wall;

[0006] The support layer is located on the upper part of the silicon substrate, the seed layer is located on the upper part of the support layer, and the first cavity formed by the silicon substrate, the support layer and the seed layer is the bottom reflective air cavity of the binaural channel resonator structure; the binaural channel structure is suspended in the air by the support layer surrounding it; the protective cap is located on the upper part of the binaural channel resonator structure; the first copper wall and the second copper wall are disposed on the binaural channel resonator structure.

[0007] Furthermore, the dual-ear channel resonator structure includes a piezoelectric layer, a lower electrode layer, a lower electrode ear-shaped channel, an upper electrode ear-shaped channel, an upper electrode layer, an upper electrode protective layer, and a through hole;

[0008] The lower electrode layer is divided into a first large-area resonator and a first small-area resonator skirt by the lower electrode ear-shaped channel; the lower electrode ear-shaped channel includes two ear-shaped structures and a channel sandwiched between the two ear-shaped structures, and each ear-shaped structure is provided with a through hole penetrating the upper electrode protective layer, the upper electrode layer, the piezoelectric layer and the lower electrode layer; the first copper wall is disposed at the skirt of the first small-area resonator; the first copper wall penetrates the piezoelectric layer, the upper electrode layer and the upper electrode protective layer and extends upward to support the protective cap;

[0009] The upper electrode layer is divided into a second large-area resonator and a second small-area resonator skirt by the upper electrode ear-shaped channel; the upper electrode ear-shaped channel includes two ear-shaped structures and a channel sandwiched between the two ear-shaped structures, and each ear-shaped structure is provided with a through hole penetrating the upper electrode protective layer, the upper electrode layer, the piezoelectric layer and the lower electrode layer; the second copper wall is provided at the first small-area resonator skirt; the second copper wall penetrates the piezoelectric layer, the upper electrode layer and the upper electrode protective layer and extends upward to support the protective cap;

[0010] The second cavity formed by the upper electrode protective layer, the first copper wall, the second copper wall, and the protective cap is the top reflective air cavity of the binaural channel resonator structure.

[0011] Furthermore, the longitudinal depth of the bottom reflective air cavity and the top reflective air cavity is 1-5 μm.

[0012] Furthermore, the materials used for the lower electrode layer and the upper electrode layer are at least one of molybdenum, copper, and / or tungsten; the materials used for the first copper wall and the second copper wall are at least one of copper and / or gold; the material used for the piezoelectric layer is at least one of AlN, ScAlN, and / or PZT, which are piezoelectric materials with piezoelectric properties; the material used for the support layer is at least one of SiO2, SiC, and / or SiN; and the material used for the upper electrode protective layer is at least one of AlN and / or SiN.

[0013] Furthermore, the width of the first copper wall extends outward to 5-20µm along the center line of the skirt of the first small-area resonator in a direction away from the first large-area resonator, and the width of the second copper wall extends outward to 5-20µm along the center line of the skirt of the second large-area resonator in a direction away from the second large-area resonator.

[0014] The length of the first copper wall is the length along the skirt of the first small-area resonator, and the length of the second copper wall is the length along the skirt of the second small-area resonator; the depth of the first copper wall and the second copper wall is penetrating through the piezoelectric layer, the upper electrode layer and the upper electrode protective layer and extending upward to the protective cap.

[0015] The beneficial effects of this invention are:

[0016] (1) This invention provides a thin-film bulk acoustic wave resonator structure, called a binaural channel resonator, comprising a piezoelectric material layer and upper and lower metal layers. The sandwich structure is suspended in the air by a supporting layer surrounding it. An air cavity is formed under the sandwich structure, surrounded by the supporting layer. A copper wall surrounds the upper air cavity, and the copper wall is used to dissipate the heat generated during the conversion of acoustic energy and electrical energy to the maximum extent and at the fastest speed, thereby improving the power capacity of the filter and multiplexer. This invention solves the problem of low power capacity of bulk acoustic wave resonators, filters, and multiplexers.

[0017] (2) The present invention provides a structure of a thin film bulk acoustic wave filter and multiplexer, which is composed of multiple binaural channel resonators cascaded together. Each resonator is surrounded by Cu walls divided into two sides by binaural channels. On the one hand, it avoids unnecessary parasitic interference between resonators. On the most important side, it diffuses the heat generated by each resonator through the Cu walls on both sides to the maximum extent and at the fastest speed, thereby improving the power capacity of the thin film bulk acoustic wave filter and multiplexer. Attached Figure Description

[0018] Figure 1 This is a side view of a single binaural channel resonator device in this invention.

[0019] Figure 2 This is a schematic diagram of the binaural channel resonator structure of the present invention, which includes layers such as a first copper wall and a second copper wall.

[0020] Figure 3 This is a schematic diagram of a partial layer in the present invention that only includes the first copper wall.

[0021] Figure 4 This is a schematic diagram of a partial layer in the present invention that only includes the second copper wall.

[0022] Figure 5 This is a simplified schematic diagram of the binaural channel resonator structure in this invention.

[0023] Figure 6 This is a three-dimensional side view of a single binaural channel resonator device in this invention.

[0024] Figure 7 This is a schematic diagram of a filter circuit composed of multiple binaural channel resonators in this invention.

[0025] Figure 8 This is a schematic diagram showing the connection of the three binaural channel resonators in this invention.

[0026] Figure 9 This is a side view of the arrangement of three binaural channel resonators in this invention.

[0027] Figure 10 This is a schematic diagram of the structure of an existing filter.

[0028] Figure 11 This is a schematic diagram of the overall structure of the filter of the present invention.

[0029] Wherein, 1-silicon substrate, 2-support layer, 3-seed layer, 4-protective cap, 5-first cavity, 6-piezoelectric layer, 7-lower electrode layer, 701-first large-area resonator, 702-first small-area resonator skirt, 8-lower electrode ear-shaped channel, 9-upper electrode ear-shaped channel, 10-upper electrode layer, 1001-second large-area resonator, 1002-second small-area resonator skirt, 11-upper electrode protective layer, 12-through hole, 13-first copper wall, 14-second copper wall, 15-second cavity. Detailed Implementation

[0030] The specific embodiments of the present invention are described below to enable those skilled in the art to understand the present invention. However, it should be understood that the present invention is not limited to the scope of the specific embodiments. For those skilled in the art, various changes are obvious as long as they are within the spirit and scope of the present invention as defined and determined by the appended claims. All inventions utilizing the concept of the present invention are protected.

[0031] Example

[0032] like Figure 1 As shown, the present invention provides a device for improving the power capacity of acoustic resonators, filters and multiplexers, including a silicon substrate 1, a support layer 2, a seed layer 3, a dual-channel resonator structure, a protective cap 4, a first copper wall 13 and a second copper wall 14.

[0033] The support layer 2 is located on the upper part of the silicon substrate 1, and the seed layer 3 is located on the upper part of the support layer 2. The first cavity 5 formed by the silicon substrate 1, the support layer 2, and the seed layer 3 is the bottom reflective air cavity of the binaural channel resonator structure. The binaural channel structure is suspended in the air by the support layer 2 surrounding it. The protective cap 4 is located on the upper part of the binaural channel resonator structure. The first copper wall 13 and the second copper wall 14 are disposed on the binaural channel resonator structure.

[0034] In this embodiment, the dual-ear channel resonator structure includes a piezoelectric layer 6, a lower electrode layer 7, a lower electrode ear-shaped channel 8, an upper electrode ear-shaped channel 9, an upper electrode layer 10, an upper electrode protective layer 11, and a through hole 12.

[0035] The lower electrode layer 7 is divided into a first large-area resonator 701 and a first small-area resonator skirt 702 by the lower electrode ear-shaped channel 8; the lower electrode ear-shaped channel 8 includes two ear-shaped structures and a channel sandwiched between the two ear-shaped structures, and each ear-shaped structure is provided with a through hole 12 that penetrates the upper electrode protective layer 11, the upper electrode layer 10, the piezoelectric layer 6 and the lower electrode layer 7; the first copper wall 13 is disposed at the first small-area resonator skirt 702; the first copper wall 13 penetrates the piezoelectric layer 6, the upper electrode layer 10 and the upper electrode protective layer 11 and extends upward to support the protective cap 4;

[0036] The upper electrode layer 10 is divided into a second large-area resonator 1001 and a second small-area resonator skirt 1002 by the upper electrode ear-shaped channel 9; the upper electrode ear-shaped channel 9 includes two ear-shaped structures and a channel sandwiched between the two ear-shaped structures, and each ear-shaped structure is provided with a through hole 12 that penetrates the upper electrode protective layer 11, the upper electrode layer 10, the piezoelectric layer 6 and the lower electrode layer 7; the second copper wall 14 is disposed at the first small-area resonator skirt 1002; the second copper wall 14 penetrates the piezoelectric layer 6, the upper electrode layer 10 and the upper electrode protective layer 11 and extends upward to support the protective cap 4;

[0037] The second cavity 15 formed by the upper electrode protective layer 11, the first copper wall 13, the second copper wall 14, and the protective cap 4 is the top reflective air cavity of the binaural channel resonator structure. The longitudinal depth of the bottom reflective air cavity and the top reflective air cavity is 1-5 μm.

[0038] In this embodiment, the lower electrode layer 7 and the upper electrode layer 10 are made of at least one of molybdenum, copper, and / or tungsten; the first copper wall 13 and the second copper wall 14 are made of at least one of copper and / or gold; the piezoelectric layer 6 is made of at least one of AlN, ScAlN, and / or PZT, which are piezoelectric materials with piezoelectric properties; the support layer 2 is made of at least one of SiO2, SiC, and / or SiN; and the upper electrode protective layer 11 is made of at least one of AlN and / or SiN.

[0039] In this embodiment, the width of the first copper wall 13 extends outward to 5-20 μm along the center line of the skirt 702 of the first small area resonator in a direction away from the first large area resonator 701, and the width of the second copper wall 14 extends outward to 5-20 μm along the center line of the skirt 1002 of the second large area resonator in a direction away from the second large area resonator 1001.

[0040] The length of the first copper wall 13 is the length along the skirt 702 of the first small-area resonator, and the length of the second copper wall 14 is the length along the skirt 1002 of the second small-area resonator; the depth of the first copper wall 13 and the second copper wall 14 is penetrating through the piezoelectric layer 6, the upper electrode layer 10 and the upper electrode protective layer 11 and extending upward to the protective cap 4.

[0041] In this embodiment, the thin-film bulk acoustic resonator structure provided by the present invention can dissipate the heat generated during the conversion of acoustic energy and electrical energy to the maximum extent and at the fastest speed, thereby improving the power capacity of the filter and multiplexer. This structure is called a binaural channel resonator, which includes a piezoelectric layer 6 and its upper and lower metal layers (upper electrode layer 10 and lower electrode layer 7). This sandwich binaural channel resonator structure is suspended in the air by a support layer 2 surrounding it. The upper electrode layer 10 in the binaural channel resonator is divided into two parts by the upper electrode ear-shaped channel 9: a second large-area resonator 1001 and a second small-area resonator skirt 1002. Starting from the midline of the skirt, a connecting layer Cu (second copper wall 14) is set at a position about 5-20 micrometers larger than the lower electrode layer 7, extending outward from the direction away from the second large-area resonator 1001. The Cu layer penetrates the piezoelectric layer 6, the upper electrode layer 10 and the upper electrode protective layer 11, and continues to extend upward like a wall, supporting... The protective cap 4 is supported. The lower electrode layer 7 is divided into two parts by the lower electrode ear-shaped channel: a first large-area resonator 701 and a first small-area resonator skirt 702. Starting from the center line of the skirt, a connecting layer Cu (first copper wall 13) is set at a position about 5-20 micrometers larger than the lower electrode layer 7, away from the first large-area resonator 701. The Cu layer penetrates the piezoelectric layer 6, the upper electrode layer 10, and the upper electrode protective layer 11, and continues to extend upward like a wall, supporting the protective cap 4. The Cu walls on both sides, divided by the double ear-shaped channel, surround the resonators. On the one hand, this avoids unnecessary parasitic interference between the resonators. On the most important hand, it allows the heat generated by each resonator to be diffused away through the Cu walls on both sides to the maximum extent and at the fastest speed, thereby improving the power capacity of the thin-film bulk acoustic wave filter and multiplexer.

[0042] In this embodiment, as Figure 1As shown, films are deposited sequentially from bottom to top. 1 is a silicon substrate; 2 is a support layer (SiO2, SiC, SiN, etc.) surrounding the resonator; 3 is a seed layer (SiO2 or a composite seed layer); and the first cavity 5 formed by the silicon substrate 1, support layer 2, and seed layer 3 serves as the bottom reflective air cavity of the resonator. 7 is the lower electrode layer, made of metals such as Mo, Cu, and W; 8 is the lower electrode ear-shaped channel, dividing the lower electrode into a first large-area resonator 701 and a first small-area resonator skirt 702; 6 is a piezoelectric layer, made of piezoelectric materials such as AlN, ScAlN, and PZT; 10 is the upper electrode layer, made of metals such as Mo, Cu, and W; 9 is the upper electrode ear-shaped channel, dividing the upper electrode layer 10 into a second large-area resonator 1001 and a second small-area resonator skirt 1002; 11 is the upper electrode protective layer (AlN, SiN, etc.); and 12 is a through-hole in the two ear-shaped structures. The first copper wall 13, on the same side as the lower electrode ear-shaped channel 8, penetrates the piezoelectric layer 6, the upper electrode layer 10, and the upper electrode protective layer 11, and continues upward to support the protective cap 4. The second copper wall 14, on the same side as the upper electrode ear-shaped channel 9, penetrates the piezoelectric layer 6, the upper electrode layer 10, and the upper electrode protective layer 11, and continues upward to support the protective cap 4. The second cavity 15 formed by the upper electrode protective layer 11, the first copper wall 13, and the second copper wall 14 is the top reflecting air cavity of the resonator. The two air reflecting cavities at the top and bottom confine the energy in the resonator to improve the Q value of the resonator. When the acoustic energy and electrical energy in the resonator generate heat during the conversion process, it will be quickly transferred to the protective cap 4 through the first copper wall 13 and the second copper wall 14 around the resonator, and then transferred to the outside through the protective cap to improve its power capacity. The heat dissipation is shown by the arrow.

[0043] In this embodiment, as Figure 2 , Figure 3 and Figure 4As shown, the lower electrode layer 7 is made of metals such as molybdenum, tungsten, and copper. The lower electrode layer 7 is divided into two parts by the lower electrode ear-shaped channel 8: a first large-area resonator 701 and a first small-area resonator skirt 702. The lower electrode ear-shaped channel 8 consists of two ear-shaped structures at both ends and a channel sandwiched between the two ear-shaped structures. Through-holes 12 are provided in the two ear-shaped structures, penetrating the upper electrode protective layer 11, the upper electrode layer 10, the piezoelectric layer 6, and the lower electrode layer 7. In the figure, the upper electrode layer 10 is made of metals such as molybdenum, tungsten, and copper. The upper electrode layer 10 is divided into two parts by the upper electrode ear-shaped channel 9: a second large-area resonator 1001 and a second small-area resonator skirt 1002. The upper electrode ear-shaped channel 9 consists of two ear-shaped structures at both ends and a channel sandwiched between the two ear-shaped structures. Through-holes 12 are provided in the two ear-shaped structures, penetrating the upper electrode protective layer 11, the upper electrode layer 10, the piezoelectric layer 6, and the lower electrode layer 7. A first copper wall 13 and a second copper wall 14 are provided on the small area skirts on both sides. The first copper wall 13 is on the same side as the lower electrode ear-shaped channel 8, and the second copper wall 14 is on the same side as the upper electrode ear-shaped channel 9. The width of the first copper wall 13 and the second copper wall 14 is about 5-20 micrometers wide, extending outward from the center line of their respective small area skirts in a direction away from the large area. The length extends from their respective small area skirts to the double ear structure. The depth penetrates the piezoelectric layer 6, the upper electrode layer 10, and the upper electrode protective layer 11 and continues to extend upward like a wall, supporting the protective cap 4. The Cu walls (first copper wall 13 and second copper wall 14) on both sides of the double ear-shaped channel surround the resonator. On the one hand, this avoids unnecessary parasitic interference between the resonators. On the most important hand, it allows the heat generated by each resonator to be diffused away to the maximum extent and at the fastest speed through the Cu walls (first copper wall 13 and second copper wall 14) on both sides, thereby improving the power capacity of the thin film bulk acoustic wave filter and multiplexer.

[0044] In this embodiment, as Figure 5 As shown in the figure, the first copper wall 13 is the copper wall on the same side as the lower electrode double ear channel 8, and the second copper wall 14 is the copper wall on the same side as the upper electrode double ear channel 9.

[0045] In this embodiment, as Figure 6 As shown, its structure and the interrelationships between its layers are the same as... Figure 1 The heat dissipation process is shown by the arrow.

[0046] In this embodiment, as Figure 7 As shown, Figure 7This is a schematic diagram of a filter circuit composed of multiple binaural channel resonators. The signal flows into the filter from the input terminal In and out from the output terminal Out. The series branch consists of binaural channel resonators AE, and the parallel branch consists of binaural channel resonators FJ. There is at least one binaural channel resonator in both series and parallel configurations. L1 is the input inductor, serving a matching and connection function, and L2 is the output inductor, also serving a matching and connection function. L3-L6 are connected to the parallel resonators, and the circuit finally merges into the ground plane. When two resonators are connected, the upper electrode ear-shaped channel 9 must be connected on one side, and the lower electrode ear-shaped channel 8 on the other side, as shown in the diagram. When the left side (on the side of the first copper wall 13) of the first resonator A is the lower electrode channel, the right side (on the side of the second copper wall 14) is the upper electrode channel. For binaural channel resonator B, binaural channel resonators A and B can only be connected when the left side is the upper electrode channel. Subsequent resonators are arranged similarly.

[0047] In this embodiment, as Figure 8 As shown, Figure 8 The following examples illustrate how three binaural channel resonators, res1, res2, and res3, can be connected. When binaural channel resonators res1 and res2 are both upper electrode binaural channels 9, the two second copper walls 14 on the left and right sides can be combined into one unit through the copper in the shaded area, thus completing the connection of the two resonators. When binaural channel resonators res2 and res3 are both lower electrode binaural channels 8, the two first copper walls 13 on the left and right sides can be combined into one unit through the copper in the shaded area, thus completing the connection of the two resonators.

[0048] In this embodiment, as Figure 9 As shown, Figure 9 The image shows a side view of the three resonators arranged together. Copper is used to connect the binaural channel resonators res1 and res2, and between res2 and res3, forming a single copper wall. Each binaural channel resonator can dissipate the heat generated through the copper walls on both sides, as shown by the arrows.

[0049] In this embodiment, as Figure 10 As shown, Figure 10 The diagram shows the structure of an existing filter. The resonator does not have a copper wall, so the heat generated can only be transferred between them and finally to the sealing ring K to dissipate the heat to the protective cap 4, as shown by the arrow. The heat transfer speed is slow and the amount of heat transferred is small, so the power capacity of the filter will be poor.

[0050] In this embodiment, as Figure 11 As shown, Figure 11The diagram shows the filter structure of the present invention. The heat generated by the resonator can not only be transferred through the sealing ring K, but also quickly and to the maximum extent through the copper walls around the resonator to the protective cap, and then continue to diffuse to the outside, as shown by the arrow, thereby improving the power capacity of the bulk acoustic wave filter.

Claims

1. A device for improving the power capacity of acoustic resonators, filters, and multiplexers, characterized in that, It includes a silicon substrate (1), a support layer (2), a seed layer (3), a dual-channel resonator structure, a protective cap (4), a first copper wall (13), and a second copper wall (14). The support layer (2) is located on the upper part of the silicon substrate (1), the seed layer (3) is located on the upper part of the support layer (2), and the first cavity (5) formed by the silicon substrate (1), the support layer (2) and the seed layer (3) is the bottom reflective air cavity of the binaural channel resonator structure. The dual-ear channel structure is suspended in the air by a support layer (2) surrounding it; The protective cap (4) is located on the upper part of the dual-channel resonator structure; the first copper wall (13) and the second copper wall (14) are disposed on the dual-channel resonator structure; The dual-ear channel resonator structure includes a piezoelectric layer (6), a lower electrode layer (7), a lower electrode ear-shaped channel (8), an upper electrode ear-shaped channel (9), an upper electrode layer (10), an upper electrode protective layer (11), and a through hole (12). The lower electrode layer (7) is divided into a first large-area resonator (701) and a first small-area resonator skirt (702) by the lower electrode ear-shaped channel (8); the lower electrode ear-shaped channel (8) includes two ear-shaped structures and a channel sandwiched between the two ear-shaped structures, and each ear-shaped structure is provided with a through hole (12) penetrating the upper electrode protective layer (11), the upper electrode layer (10), the piezoelectric layer (6) and the lower electrode layer (7); the first copper wall (13) is provided at the first small-area resonator skirt (702); the first copper wall (13) penetrates the piezoelectric layer (6), the upper electrode layer (10) and the upper electrode protective layer (11) and extends upward to support the protective cap (4); The upper electrode layer (10) is divided into a second large-area resonator (1001) and a second small-area resonator skirt (1002) by the upper electrode ear-shaped channel (9); the upper electrode ear-shaped channel (9) includes two ear-shaped structures and a channel sandwiched between the two ear-shaped structures, and each ear-shaped structure is provided with a through hole (12) penetrating the upper electrode protective layer (11), the upper electrode layer (10), the piezoelectric layer (6) and the lower electrode layer (7); the second copper wall (14) is provided at the first small-area resonator skirt (1002); the second copper wall (14) penetrates the piezoelectric layer (6), the upper electrode layer (10) and the upper electrode protective layer (11) and extends upward to support the protective cap (4); The second cavity (15) formed by the upper electrode protective layer (11), the first copper wall (13), the second copper wall (14) and the protective cap (4) is the top reflective air cavity of the binaural channel resonator structure.

2. The apparatus for improving the power capacity of acoustic resonators, filters, and multiplexers according to claim 1, characterized in that, The longitudinal depth of the bottom and top reflective air cavities is 1-5 μm.

3. The apparatus for improving the power capacity of acoustic resonators, filters, and multiplexers according to claim 2, characterized in that, The materials used for the lower electrode layer (7) and the upper electrode layer (10) are at least one of molybdenum, copper, and tungsten; the materials used for the first copper wall (13) and the second copper wall (14) are at least one of copper and gold; the materials used for the piezoelectric layer (6) are at least one of AlN, ScAlN, and PZT piezoelectric materials with piezoelectric properties; the materials used for the support layer (2) are at least one of SiO2, SiC, and SiN; and the materials used for the upper electrode protective layer (11) are at least one of AlN and SiN.

4. The apparatus for improving the power capacity of acoustic resonators, filters, and multiplexers according to claim 3, characterized in that, The width of the first copper wall (13) extends outward to 5-20um along the center line of the skirt (702) of the first small area resonator in a direction away from the first large area resonator (701), and the width of the second copper wall (14) extends outward to 5-20um along the center line of the skirt (1002) of the second large area resonator in a direction away from the second large area resonator (1001). The length of the first copper wall (13) is the length along the skirt (702) of the first small area resonator, and the length of the second copper wall (14) is the length along the skirt (1002) of the second small area resonator; the depth of the first copper wall (13) and the second copper wall (14) is penetrating the piezoelectric layer (6), the upper electrode layer (10) and the upper electrode protective layer (11) and extending upward to the protective cap (4).

Images