Chemical mechanical polishing pad and method of making and using same

Abstract

The application discloses a preparation method of a chemical mechanical polishing pad. The method comprises the following steps: coating polyurethane slurry on a transparent film roll, obtaining a porous polyurethane film through a coagulation film forming method, degrading polymer powder containing an ester bond in the porous polyurethane film through an alkali solution to form micro-porous holes, and finally preparing the chemical mechanical polishing pad through post-processing. The polyurethane slurry is obtained by mixing a polymer containing an ester bond, a polar solvent, an anion substance and a polyurethane resin, and is coated on a substrate. In the process of coagulation film forming, water-induced phase separation forms water droplet-shaped holes, and the polymer containing an ester bond occupies space in the polyurethane and is coagulated into a fixed type. Then, the powder is degraded through alkali solution immersion. After elution, micro-pores can be formed in the polyurethane solid phase, the micro-mechanical structure of the polishing pad is more balanced, the supporting force on the object to be polished is more uniform, the polishing liquid can flow in the micro-porous holes, and the supply of the polishing liquid is more uniform and stable.

Description

Technical Field

[0001] This invention relates to the field of polishing pad preparation, specifically to a chemical mechanical polishing pad, its preparation method, and its application. Background Technology

[0002] Semiconductor chips are made by forming grooves on silicon wafers through photolithography and etching processes, and then going through processes such as ion implantation, annealing, diffusion, physical vapor deposition (PVD), chemical vapor deposition (CVD), and chemical mechanical polishing (CMP) to finally realize a layer of micro-integrated circuit structure on the wafer. Chips are made by integrating multiple layers of micro-circuit structures.

[0003] In the manufacturing of micro-integrated circuits, different deposition techniques and processes are used to deposit layers onto the surface of semiconductor wafers in stages, followed by chemical etching to remove excess and unwanted parts. Repeating this process according to the chip design to stack different circuit patterns on the wafer surface yields multi-layered microcircuits, commonly known as semiconductor chips. However, this results in a microscopically uneven surface on the wafer. As chip integration density increases, the number of circuit layers within the chip also increases. The manufacturing of multi-layered microcircuits is done layer by layer from the bottom up. If the surface of the lower layer is not flat enough, it will directly affect the formation of the upper microcircuits. Therefore, the processing technology for each layer of microcircuit requires the silicon wafer to have a planar surface, primarily achieved through chemical mechanical polishing (CMP) to ensure the surface planarity meets the requirements of the upper layers.

[0004] Chemical mechanical polishing (CMP) is a crucial step in semiconductor chip manufacturing. It removes excess material and impurities from the surface, reducing defects such as surface roughness and scratches. As chip manufacturing processes advance, the interconnects on chips become increasingly finer, and the number of stacked layers increases. Therefore, the polishing quality of each silicon wafer layer—the degree of surface planarization—directly determines the quality of the semiconductor chip. In the CMP process, a polishing head picks up the silicon wafer and brings it into contact with the polishing surface of a polishing pad. The polishing head applies pressure, pressing the wafer against the polishing surface. Simultaneously, polishing fluid is supplied between the wafer and the polishing surface. The polishing pad and wafer rotate relative to each other, polishing the silicon wafer surface. Through the combined action of chemical etching and mechanical abrasion, the wafer surface is polished and planarized. The CMP process typically requires two polishing stages to achieve a high degree of surface planarity. The first stage, rough polishing, uses a harder polishing pad (e.g., IC1000) to planarize the wafer and remove a significant amount of excess material. The second stage, fine polishing, removes scratches and other defects introduced during rough polishing. Polishing pads used for fine polishing must be soft and have better conformability to non-flat silicon wafer surfaces. Polishing pads prepared using the condensation film method can well meet the needs of fine polishing. In the CMP process, the polishing slurry mainly plays a role in grinding and polishing. A key function of the polishing pad is to uniformly supply the polishing slurry to the polishing interface and provide uniform support. Because the micropore structure of polyurethane porous membranes prepared using conventional processes is mostly a teardrop-shaped pore structure with smaller tops and larger bottoms, the polishing slurry is absorbed and stored inside these pores. It can be supplied to the polishing interface during polishing, but these pores are of uneven size and not interconnected. Therefore, the polishing slurry supplied to the polishing interface during polishing is also uneven, which will prevent further improvement in the surface flatness of the workpiece. Especially in the high-end chip manufacturing process, this defect will directly affect the chip yield.

[0005] Patent application CN201710644484.7 discloses a low-defect porous polishing pad, comprising an open-cell polymer matrix, a polishing surface, and a polishing layer of a certain thickness. The open-cell polymer matrix has vertical pores and open channels interconnecting these vertical pores. A porous matrix with both macropores and micropores is formed by the coagulation of two types of polyurethane, anionic and nonionic surfactants, creating grooved channels. This allows for stable polishing of multiple wafers at excellent copper and TEOS rates, resulting in significantly lower scratches and chatter defects. However, the number and size of the open channels interconnecting the vertical pores—interconnected micropores formed within the polyurethane solid phase—are difficult to control precisely. They are highly susceptible to variations in process conditions, making batch-to-batch consistency difficult and requiring strict control over the production process. Summary of the Invention

[0006] To address the aforementioned problems, the first aspect of this invention provides a method for preparing a chemical mechanical polishing pad, comprising the following steps:

[0007] S1. Preparation of polyurethane slurry;

[0008] S2. Coat the surface of the transparent film roll with the polyurethane slurry obtained in S1, and solidify it with a coagulating liquid to obtain a polyurethane film;

[0009] S3. Immerse the polyurethane membrane obtained in S2 in an alkaline solution, then wash it with water and perform post-treatment to obtain the final product.

[0010] In some preferred embodiments, the raw materials for preparing the polyurethane slurry in S1, by weight, include 0.5-13 parts of a polymer containing ester bonds, 15-65 parts of a polar solvent, 1-6 parts of anionic substances, and 100 parts of polyurethane resin; preferably, the raw materials for preparing the polyurethane slurry in S1, by weight, include 1-10 parts of a polymer containing ester bonds, 20-60 parts of a polar solvent, 2-4 parts of anionic substances, and 100 parts of polyurethane resin.

[0011] In some preferred embodiments, the ester-containing polymer is selected from at least one of polylactic acid (PLA), polylactic-co-glycolic acid copolymer (PLGA), polybutylene succinate (PBS), alkali-soluble polyester (COPET), polyethylene succinate (PES), and polymethyl methacrylate (PMMA); preferably, the ester-containing polymer is selected from at least one of PLA, PLGA, and COPET; more preferably, the ester-containing polymer is COPET or PLA.

[0012] In some preferred embodiments, the COPET is a polyethylene terephthalate resin in which sodium dimethyl isophthalate sulfonate and polyethylene glycol participate in block copolymerization.

[0013] In this invention, polymers containing ester bonds are selected that are insoluble or sparingly soluble in specific polar solvents, but can degrade rapidly in alkaline solutions of certain concentrations and temperatures. The lower the degree of polymerization and crystallinity, the faster the degradation rate. The selection of polymers containing ester bonds facilitates their suspension in the polyurethane resin slurry as fine particles. During solidification, these particles uniformly occupy the space of the polyurethane solid phase, achieving uniform pore size in the polishing pad. The degradation characteristic of these polymers when immersed in alkaline solutions helps to degrade and wash away the occupier particles, leaving interconnected micropores of appropriate size. This allows the polishing liquid to circulate within these micropores, increasing the polishing effect of the polishing pad.

[0014] In some preferred embodiments, the polar solvent is selected from at least one of N,N-dimethylformamide (DMF), tetrahydrofuran (THF), and dimethyl sulfoxide (DMSO); preferably, the polar solvent is DMF.

[0015] In some preferred embodiments, the anionic substance is selected from at least one of sodium dodecylbenzenesulfonate, sodium dodecyl sulfonate, sodium dioctyl succinate sulfonate, disodium fatty alcohol polyoxyethylene ether sulfosuccinate, lignin sulfonate, sodium fatty alcohol polyoxyethylene ether sulfate, and sodium lauryl sulfate; preferably, the anionic substance containing a chain fatty acid group is sodium dioctyl succinate sulfonate.

[0016] In some preferred embodiments, the solid content of the polyurethane resin is 18-40 wt%; preferably, the solid content of the polyurethane resin is 25-35 wt%.

[0017] In some preferred embodiments, the specific operation for preparing the polyurethane slurry in S1 is as follows: after uniformly dispersing the polymer containing ester bonds and the anionic substance in a polar solvent, polyurethane resin is added to obtain the slurry.

[0018] In some preferred embodiments, the ester-containing polymer is a pretreated micron-sized ester-containing polymer powder.

[0019] In some preferred embodiments, the pretreatment specifically involves: the unsaturated polymer is first pulverized into small particles, then pulverized a second time into fine powder, and finally sieved with a stainless steel sieve to obtain the final product.

[0020] In some preferred embodiments, the crushing process refers to the process of using mechanical force to hammer, cut, squeeze, grind, etc., solid materials to make them into small pieces, granules, or powder. This application does not particularly limit the crushing process.

[0021] Preferably, the pulverization method is selected from one of mechanical pulverizer pulverization, grinding mill pulverization, and air jet mill pulverization.

[0022] In some preferred embodiments, the mechanical crusher is selected from at least one of, for example, toothed crusher, hammer crusher, knife crusher, turbine crusher, pressure mill crusher, and milling crusher.

[0023] In some preferred embodiments, the grinding mill is selected from at least one of ball mills and roller mills.

[0024] More preferably, the first pulverization process is mechanical pulverization, and the second pulverization process is air jet pulverization.

[0025] In some preferred embodiments, the stainless steel screen has a mesh size of 800 to 2000; preferably, the stainless steel screen has a mesh size of 1000.

[0026] In some preferred embodiments, the average particle size of the ester-containing polymer powder is ≤25μm; preferably, the average particle size of the ester-containing polymer powder is ≤13μm.

[0027] The ester-containing polymers selected in this invention are generally in a relatively coarse block or granular state, with particle sizes much larger than the size required for pulverization production. The applicant discovered that first pulverizing them into small particles, then further pulverizing them into powder, and finally sieving them through a sieve of a specific mesh size, yields polymer powder of suitable size. In particular, first pulverizing using a mechanical pulverizer to obtain small particles, and then further pulverizing them using an air jet mill to obtain fine powder, can further increase the yield of the obtained polymer powder. If only mechanical pulverization of the polymer is used, the powder yield is very low. It is speculated that the reason might be that pulverizing in two different ways can effectively reduce the size deviation of the fine powder, thereby obtaining micropores of uniform size. Simultaneously, using a 1000-mesh stainless steel sieve reduces the sieving rate, thus solving the problem of low fine powder yield. The applicant unexpectedly discovered that when the particle size of the polymer containing ester bonds does not exceed 25 μm, especially not more than 13 μm, the resulting micropore structure is uniform and stable, and the grinding efficiency is high. If the particle size exceeds 13 μm, especially more than 25 μm, the space occupied by the particles in the polyurethane solid phase is too large, which will affect the structure of conventional teardrop-shaped pores and easily lead to severe deformation of the teardrop-shaped pore structure. This is not conducive to the stability of the micromechanical structure, resulting in large size deviation of the micropores, reduced porosity, and consequently reduced grinding rate of the final polishing pad and increased non-uniformity. Selecting powder with a particle size of less than or equal to 13 μm has less impact on the teardrop-shaped pore structure, and the resulting polishing pad has the best overall performance.

[0028] In some preferred embodiments, the transparent film roll in S2 is not specifically limited; preferably, the transparent film roll in S2 is selected from at least one of polyethylene terephthalate (PET), polypropylene (PP), polyethylene (PE), polycarbonate (PC), and acrylonitrile-butadiene-styrene terpolymer (ABS); preferably, the transparent film roll in S2 is PP.

[0029] In some preferred embodiments, the condensate in S2 is selected from at least one of DMF, THF, and DMSO; preferably, the condensate in S2 is DMF; more preferably, the condensate in S2 is a 15-27 wt% DMF aqueous solution; even more preferably, the condensate in S2 is a 20 wt% DMF aqueous solution.

[0030] In some preferred embodiments, the coating method in S2 is coating with a scraper.

[0031] In some preferred embodiments, the alkaline solution in S3 is selected from at least one of lithium hydroxide aqueous solution, sodium hydroxide aqueous solution, potassium hydroxide aqueous solution, sodium carbonate aqueous solution, and ammonia aqueous solution; preferably, the alkaline solution in S3 is selected from at least one of lithium hydroxide aqueous solution, sodium hydroxide aqueous solution, and potassium hydroxide aqueous solution; more preferably, the alkaline solution in S3 is potassium hydroxide aqueous solution.

[0032] In some preferred embodiments, the temperature of the alkaline solution is 1–100°C; preferably, the temperature of the alkaline solution is 50–100°C; and even more preferably, the temperature of the alkaline solution is 60°C.

[0033] In some preferred embodiments, the mass percentage of solute in the alkaline solution is 1% to 55%; preferably, the mass percentage of solute in the alkaline solution is 1% to 50%; more preferably, the mass percentage of solute in the alkaline solution is 3% to 50%; and even more preferably, the mass percentage of solute in the alkaline solution is 3%.

[0034] The inventors have discovered that the concentration and temperature of the alkaline solution affect the degradation rate of polymer powder containing ester bonds. When the mass content of the solute in the alkaline aqueous solution is between 1% and 50% and the temperature is between 1°C and 100°C, the polymer powder containing ester bonds can be degraded, and the degradation rate is uniform, resulting in a uniform microporous structure.

[0035] In some preferred embodiments, the post-processing in S3 is a conventional post-processing procedure for polishing pad manufacturing in the art; preferably, the post-processing in S3 is drying, polishing, and cleaning.

[0036] A second aspect of the present invention provides a chemical mechanical polishing pad, which is prepared by the above-described preparation method.

[0037] A third aspect of the present invention provides an application of a chemical mechanical polishing pad for use in the chemical mechanical polishing process of semiconductor chip manufacturing.

[0038] Compared with the prior art, the present invention has the following beneficial effects:

[0039] (1) In this application, a polyurethane slurry is prepared by mixing a polymer containing ester bonds, a polar solvent, an anionic substance, and a polyurethane resin, and then coated onto a substrate. During the coagulation and film formation process, the aqueous phase separates to form teardrop-shaped pores, while the polymer containing ester bonds occupies space within the polyurethane and coagulates and solidifies together. The powder is then degraded by soaking in an alkaline solution, and after elution, micropores are formed within the polyurethane solid phase. These micropores are interconnected and communicate with the teardrop-shaped pores, allowing the polishing fluid to circulate within these micropores. At the same time, the presence of these micropores makes the micromechanical structure of the polishing pad more balanced, the support force on the workpiece to be polished more uniform, and the supply of polishing fluid more uniform and stable, making it suitable for surface chemical mechanical polishing in the semiconductor device manufacturing process.

[0040] (2) In this application, a porous polyurethane membrane is obtained by coating a transparent film roll with polyurethane slurry and then by condensing the membrane. The alkali-soluble polymer powder in the membrane is then degraded by an alkaline solution to form occupied micropores. Finally, a chemical mechanical polishing pad is prepared by post-processing. The micropores of the chemical mechanical polishing pad are uniform in size and have suitable porosity, and the polishing performance is excellent, which provides favorable support for improving the yield of high-end process chips. Attached Figure Description

[0041] Figure 1 A flowchart of a method for preparing a chemical mechanical polishing pad.

[0042] Figure 2 SEM image of the cross section of the sample obtained in Example 2.

[0043] Figure 3 SEM image of the cross section of the sample obtained in Comparative Example 1.

[0044] Figure labeling: 11 coagulation solution, 12 alkaline solution, 13 water. Detailed Implementation

[0045] Example 1

[0046] 1. A method for preparing a chemical mechanical polishing pad, comprising the following steps, such as... Figure 1 As shown:

[0047] S1. Preparation of polyurethane slurry;

[0048] S2. The polyurethane slurry obtained in S1 is coated onto the surface of a transparent film roll and solidified with coagulating liquid 11 to obtain a polyurethane film.

[0049] S3. Immerse the polyurethane membrane obtained in S2 in alkaline solution 12, then wash and post-treat it with water 13 to obtain the final product.

[0050] The raw materials for preparing the polyurethane slurry in S1, by weight, include 1 part of a polymer containing ester bonds, 45 parts of a polar solvent, 2 parts of anionic substances, and 100 parts of polyurethane resin.

[0051] The polymer containing ester bonds is COPET.

[0052] The COPET is a polyethylene terephthalate resin (purchased from Shaoxing Xineng Textile Technology Co., Ltd.) that is a block copolymer of sodium dimethyl isophthalate sulfonate and polyethylene glycol.

[0053] The polar solvent is DMF.

[0054] The anionic substance is sodium dioctyl succinate sulfonate.

[0055] The solid content of the polyurethane resin is 25-35 wt% (purchased from Zhejiang Huada Resin HDW-20M).

[0056] The specific operation for preparing the polyurethane slurry in S1 is as follows: after the polymer containing ester bonds and the anionic substance are evenly dispersed in a polar solvent, polyurethane resin is added to obtain the slurry.

[0057] The ester-containing polymer is a pretreated, micron-sized ester-containing polymer powder.

[0058] The specific operation of the pretreatment is as follows: the unsaturated polymer is crushed into small particles in the first crushing process, and then crushed into fine powder in the second crushing process. The powder is then sieved with a stainless steel sieve to obtain the final product.

[0059] The crushing process refers to the process of using mechanical force to hammer, cut, squeeze, grind, etc., solid materials to turn them into small pieces, granules, or powder.

[0060] The first pulverization process is mechanical pulverization, and the second pulverization process is air jet pulverization.

[0061] The mechanical crusher is a toothed crusher.

[0062] The stainless steel screen has a mesh size of 1000.

[0063] The average particle size of the polymer powder containing ester bonds is ≤13μm.

[0064] The transparent film roll in S2 is made of PP (purchased from Changzhou Xinmei New Material Packaging Factory).

[0065] The condensate in S2 is a 20wt% DMF aqueous solution.

[0066] The coating method in S2 is coating with a scraper.

[0067] The alkaline solution in S3 is an aqueous solution of potassium hydroxide.

[0068] The temperature of the alkaline solution is 60°C.

[0069] The mass percentage of solute in the alkaline solution is 3%.

[0070] The post-processing in S3 includes drying, polishing, and cleaning.

[0071] 2. A chemical mechanical polishing pad, which is prepared by the above-described preparation method.

[0072] 3. An application of a chemical mechanical polishing pad for use in the chemical mechanical polishing process of semiconductor chip manufacturing.

[0073] Example 2:

[0074] 1. A method for preparing a chemical mechanical polishing pad, which differs from Example 1 in that:

[0075] The raw materials for preparing the polyurethane slurry in S1, by weight, include 5 parts of a polymer containing ester bonds, 45 parts of a polar solvent, 2 parts of anionic substances, and 100 parts of polyurethane resin.

[0076] 2. A chemical mechanical polishing pad, which is prepared by the above-described preparation method.

[0077] 3. An application of a chemical mechanical polishing pad for use in the chemical mechanical polishing process of semiconductor chip manufacturing.

[0078] Example 3:

[0079] 1. A method for preparing a chemical mechanical polishing pad, which differs from Example 2 in that:

[0080] The raw materials for preparing the polyurethane slurry in S1, by weight, include 10 parts of a polymer containing ester bonds, 45 parts of a polar solvent, 2 parts of anionic substances, and 100 parts of polyurethane resin.

[0081] 2. A chemical mechanical polishing pad, which is prepared by the above-described preparation method.

[0082] 3. An application of a chemical mechanical polishing pad for use in the chemical mechanical polishing process of semiconductor chip manufacturing.

[0083] Example 4:

[0084] 1. A method for preparing a chemical mechanical polishing pad, which differs from Example 2 in that:

[0085] The ester-containing polymer is PLA, purchased from Natureworks 4032D, USA.

[0086] 2. A chemical mechanical polishing pad, which is prepared by the above-described preparation method.

[0087] 3. An application of a chemical mechanical polishing pad for use in the chemical mechanical polishing process of semiconductor chip manufacturing.

[0088] Example 5:

[0089] 1. A method for preparing a chemical mechanical polishing pad, which differs from Example 2 in that:

[0090] The mass percentage of solute in the alkaline solution is 50%.

[0091] 2. A chemical mechanical polishing pad, which is prepared by the above-described preparation method.

[0092] 3. An application of a chemical mechanical polishing pad for use in the chemical mechanical polishing process of semiconductor chip manufacturing.

[0093] Example 6:

[0094] 1. A method for preparing a chemical mechanical polishing pad, which differs from Example 2 in that:

[0095] The temperature of the alkaline solution is 100°C.

[0096] 2. A chemical mechanical polishing pad, which is prepared by the above-described preparation method.

[0097] 3. An application of a chemical mechanical polishing pad for use in the chemical mechanical polishing process of semiconductor chip manufacturing.

[0098] Comparative Example 1:

[0099] 1. A method for preparing a chemical mechanical polishing pad, which differs from Example 2 in that:

[0100] The stainless steel screen has a mesh size of 500.

[0101] The average particle size of the polymer powder containing ester bonds is ≤25μm.

[0102] 2. A chemical mechanical polishing pad, which is prepared by the above-described preparation method.

[0103] 3. An application of a chemical mechanical polishing pad for use in the chemical mechanical polishing process of semiconductor chip manufacturing.

[0104] Comparative Example 2:

[0105] 1. A method for preparing a chemical mechanical polishing pad, which differs from Example 2 in that:

[0106] The raw materials for preparing the polyurethane slurry in S1, by weight, include 15 parts of a polymer containing ester bonds, 45 parts of a polar solvent, 2 parts of anionic substances, and 100 parts of polyurethane resin.

[0107] The average particle size of the polymer powder containing ester bonds is ≤13μm.

[0108] 2. A chemical mechanical polishing pad, which is prepared by the above-described preparation method.

[0109] 3. An application of a chemical mechanical polishing pad for use in the chemical mechanical polishing process of semiconductor chip manufacturing.

[0110] Performance testing

[0111] 1. Size testing of interconnected micropores: The cross-sectional structure of the polishing pad samples obtained in the examples and comparative examples was analyzed using SEM (scanning electron microscopy). The size of the micropores within a 0.2 mm length was observed and calculated using the formula... The standard deviation σ of the micropore size was calculated; see the specific test results below. Figure 2 , Figure 3 Table 1.

[0112] 2. Porosity of the microporous membrane: After drying the polishing pad samples obtained in the examples and comparative examples to constant weight, weigh them and record the weight as w1. Then, soak them in anhydrous ethanol for 24 hours. After removing them, gently absorb the ethanol adsorbed on the surface with filter paper, and quickly weigh them a second time and record the weight as w2. Calculate the porosity of the microporous membrane according to the formula.

[0113]

[0114] In the formula, w1 and w2 are the masses of the samples before and after soaking, respectively, in grams; ρ1 is the density of polyurethane, in g / cm³. 3 ρ2 is the density of anhydrous ethanol, in g / cm³. 3 The specific test results are shown in Table 2.

[0115] 3. Polishing Performance: Polishing was conducted using Anji D2000E silica polishing slurry on a single-module integrated CMP polisher (Hangzhou SIZONE Electronic Technology Inc.). TEOS blanket-coated silicon wafers were used as monitor wafers to determine the removal rate (RR). Polishing conditions used in the experiments included: a polishing platform speed of 93 rpm; a polishing head speed of 87 rpm; a polishing slurry flow rate of 170 mL / min; and a polishing time of 90 s / wafer.

[0116] The film thickness before polishing was measured by scanning 49 points on a silicon wafer using a FILMETRICS film thickness measurement tool (Filmetrics, Inc., USA). and subsequent film thickness To calculate the average removal amount at 49 locations MEAN = AVERAGE(PRE-POST); and according to the following formula:

[0117] Calculate the standard deviation of the amount removed;

[0118] Through calculation formula The grinding rate of the test wafer was obtained. Through calculation formula The non-uniformity of the amount of material removed from the test wafer was obtained (Nu, %), which reflects the degree of planarization of the wafer surface after polishing.

[0119] The polishing data of the test wafer (moniter wafer) was recorded at the 26th, 52nd, 78th, 104th and 145th wafer counts. The RR and Nu of each of the five test wafers were counted and their average value was calculated as the recorded data. The specific test results are shown in Table 2.

[0120] Table 1. Performance test results of the examples and comparative examples.

[0121]

Claims

1. A method for preparing a chemical mechanical polishing pad, characterized in that, It includes the following steps S1. Preparation of polyurethane slurry; S2. Coat the surface of the transparent film roll with the polyurethane slurry obtained in S1, and solidify it with a coagulating liquid to obtain a polyurethane film; S3. Immerse the polyurethane membrane obtained in S2 in an alkaline solution, then wash it with water and perform post-treatment to obtain the final product; The raw materials for preparing the polyurethane slurry in S1, by weight, include 0.5-13 parts of polymer containing ester bonds, 15-65 parts of polar solvent, 1-6 parts of anionic substance, and 100 parts of polyurethane resin. The ester-containing polymer is a pretreated, micron-sized ester-containing polymer powder; the average particle size of the ester-containing polymer powder is ≤25μm. The ester-containing polymer is COPET or PLA, wherein COPET is a polyethylene terephthalate resin in which sodium dimethyl isophthalate sulfonate and polyethylene glycol participate in block copolymerization. The specific operation of the pretreatment is as follows: the polymer containing ester bonds is crushed into small particles in the first crushing process, and then crushed into fine powder in the second crushing process. The powder is then sieved with a stainless steel sieve to obtain the final product. The mesh size of the stainless steel sieve is 800~2000 mesh.

2. The method for preparing a chemical mechanical polishing pad according to claim 1, characterized in that, The specific operation for preparing the polyurethane slurry in S1 is as follows: after the polymer containing ester bonds and the anionic substance are evenly dispersed in a polar solvent, polyurethane resin is added to obtain the slurry.

3. A method for preparing a chemical mechanical polishing pad according to claim 1 or 2, characterized in that, The anionic substance is selected from at least one of sodium dodecylbenzenesulfonate, sodium dodecyl sulfonate, sodium dioctyl succinate sulfonate, disodium fatty alcohol polyoxyethylene ether sulfosuccinate, lignin sulfonate, sodium fatty alcohol polyoxyethylene ether sulfate, and sodium lauryl sulfate.

4. The method for preparing a chemical mechanical polishing pad according to claim 1, characterized in that, The pulverization process is selected from one of the following: mechanical pulverizer pulverization, grinding mill pulverization, and air jet mill pulverization.

5. The method for preparing a chemical mechanical polishing pad according to claim 1, characterized in that, The alkaline solution in S3 is selected from at least one of lithium hydroxide aqueous solution, sodium hydroxide aqueous solution, potassium hydroxide aqueous solution, sodium carbonate aqueous solution, and ammonia aqueous solution; The temperature of the alkaline solution is 1~100℃; the mass percentage of the solute in the alkaline solution is 1%~55%.

6. A chemical mechanical polishing pad, characterized in that, It is obtained by the preparation method described in any one of claims 1-5.

7. An application of the chemical mechanical polishing pad according to claim 6, characterized in that, Its chemical mechanical polishing process is used in semiconductor chip manufacturing.

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