A method for molding and encapsulating CsPbBr3 perovskite quantum dots using boron nitride nanosheets
CN115948158BActive Publication Date: 2025-04-25HEBEI UNIV OF TECH
Patent Information
- Application Number
- CN202211308580.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-10-25
- Publication Date
- 2025-04-25
- Estimated Expiration
- 2042-10-25
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Figure CN115948158B_ABST
Abstract
The present invention is a method for molding and encapsulating CsPbBr using boron nitride nanosheets. 3 The method of perovskite quantum dots. This method uses compression molding technology to form pre-synthesized CsPbBr 3 / BN nanosheet powder is placed in a mold and pressed into a dense CsPbBr 3 / BN nanosheets, and then ground and sieved to obtain CsPbBr 3 / BN nanosheet particles, thereby achieving boron nitride encapsulation of quantum dots. The present invention adopts a nano-encapsulation strategy to prepare CsPbBr 3 The dense structure inside the BN nanosheet particles not only slows down the photodegradation process during continuous light irradiation, but also prevents the erosion of adverse factors such as moisture and oxygen, and can also retain the CsPbBr 3 Quantum dots have excellent photoluminescence properties.
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Citation Information
Patent Citations
Preparation method of boron nitride nanosheet
CN112938911A