A method for molding and encapsulating CsPbBr3 perovskite quantum dots using boron nitride nanosheets

CN115948158BActive Publication Date: 2025-04-25HEBEI UNIV OF TECH
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Patent Information

Application Number
CN202211308580.1
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-10-25
Publication Date
2025-04-25
Estimated Expiration
2042-10-25

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Abstract

The present invention is a method for molding and encapsulating CsPbBr using boron nitride nanosheets. 3 The method of perovskite quantum dots. This method uses compression molding technology to form pre-synthesized CsPbBr 3 / BN nanosheet powder is placed in a mold and pressed into a dense CsPbBr 3 / BN nanosheets, and then ground and sieved to obtain CsPbBr 3 / BN nanosheet particles, thereby achieving boron nitride encapsulation of quantum dots. The present invention adopts a nano-encapsulation strategy to prepare CsPbBr 3 The dense structure inside the BN nanosheet particles not only slows down the photodegradation process during continuous light irradiation, but also prevents the erosion of adverse factors such as moisture and oxygen, and can also retain the CsPbBr 3 Quantum dots have excellent photoluminescence properties.
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Citation Information

Patent Citations

  • Preparation method of boron nitride nanosheet

    CN112938911A