Leveling methods and semiconductor structures

Abstract

This invention discloses a leveling method and a semiconductor structure. The leveling method includes providing a substrate with a curved structure, a first barrier layer on a first side of the substrate, and a second barrier layer on a second side of the substrate, with the first and second sides facing away from each other; forming a first isolation layer with a first opening on the first barrier layer, and forming a second isolation layer with a second opening on the second barrier layer, wherein the first opening and / or the second opening exposes the curved structure; and performing hydrogen ion overflow and / or hydrogen ion implantation treatment on the first and / or second barrier layers of the curved structure. On the one hand, the substrate treated by the leveling method of this invention has better flatness. On the other hand, the leveling method of this invention can adjust substrates with complex deformations, and has the advantages of simple operation, flexibility, and wide applicability. Furthermore, by simultaneously treating the first and second barrier layers located on opposite sides, the leveling efficiency can be improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and more specifically, to a leveling method and a semiconductor structure. Background Technology

[0002] After wafers are formed, they will warp. However, no good solution has been proposed in related technologies to solve wafer warping, which in turn affects chip manufacturing. Summary of the Invention

[0003] This invention provides a leveling method that can solve the problem of wafer warpage.

[0004] This invention also provides a semiconductor structure fabricated using the above-described leveling method.

[0005] The leveling method of this invention includes:

[0006] A substrate including a curved structure is provided, wherein a first side of the substrate has a first barrier layer and a second side of the substrate has a second barrier layer, and the first side and the second side are disposed opposite to each other;

[0007] A first isolation layer with a first opening is formed on the first barrier layer, and a second isolation layer with a second opening is formed on the second barrier layer, wherein the first opening and / or the second opening exposes the curved structure;

[0008] The first barrier layer and / or the second barrier layer of the curved structure are subjected to hydrogen ion overflow and / or hydrogen ion implantation treatment.

[0009] According to some embodiments of the present invention, hydrogen ion overflow and / or hydrogen ion implantation treatment is performed on the first barrier layer and / or the second barrier layer of the curved structure, including:

[0010] The first and second barrier layers of the curved structure are subjected to hydrogen ion overflow treatment and hydrogen ion implantation treatment, respectively.

[0011] The barrier layer for hydrogen ion overflow treatment is located on the convex side of the curved structure, and the barrier layer for hydrogen ion implantation treatment is located on the concave side of the curved structure.

[0012] According to some embodiments of the present invention, the substrate includes a plurality of the curved structures, wherein the plurality of curved structures are divided into a first part and a second part;

[0013] A first isolation layer with a first opening is formed on the first barrier layer, and a second isolation layer with a second opening is formed on the second barrier layer, wherein the first opening and / or the second opening exposes the curved structure, including:

[0014] The first isolation layer is formed on the first barrier layer, the first isolation layer covers the raised side of the first portion and exposes the recessed side of the second portion through the first opening;

[0015] A second isolation layer is formed on the second barrier layer, the second isolation layer covering the raised side of the second portion and exposing the recessed side of the first portion through the second opening;

[0016] Performing hydrogen ion overflow and / or hydrogen ion implantation treatment on the first barrier layer and / or the second barrier layer of the curved structure includes:

[0017] The exposed first and second barrier layers are subjected to hydrogen ion implantation.

[0018] According to some embodiments of the present invention, the substrate includes a plurality of the curved structures, wherein the plurality of curved structures are divided into a first part and a second part;

[0019] A first isolation layer with a first opening is formed on the first barrier layer, and a second isolation layer with a second opening is formed on the second barrier layer, wherein the first opening and / or the second opening exposes the curved structure, including:

[0020] The first isolation layer is formed on the first barrier layer, the first isolation layer covers the recessed side of the second portion, and exposes the convex side of the first portion through the first opening;

[0021] A second isolation layer is formed on the second barrier layer, the second isolation layer covering the recessed side of the first portion and exposing the convex side of the second portion through the second opening;

[0022] Performing hydrogen ion overflow and / or hydrogen ion implantation treatment on the first barrier layer and / or the second barrier layer of the curved structure includes:

[0023] The exposed first and second barrier layers are subjected to hydrogen ion spillage treatment.

[0024] According to some embodiments of the present invention, hydrogen ion overflow treatment includes:

[0025] Laser irradiation process is used.

[0026] According to some embodiments of the present invention, the hydrogen ion overflow treatment further includes:

[0027] The processing temperature is greater than 1100℃.

[0028] According to some embodiments of the present invention, hydrogen ion implantation includes:

[0029] Ion bombardment technology is employed.

[0030] According to some embodiments of the present invention, the hydrogen ion overflow treatment further includes:

[0031] The processing temperature is between 500℃ and 700℃.

[0032] According to some embodiments of the present invention, the materials of both the first barrier layer and the second barrier layer include silicon oxide or silicon oxynitride.

[0033] According to some embodiments of the present invention, the materials of the first isolation layer and the second isolation layer include silicon nitride or silicon carbonitride.

[0034] According to some embodiments of the present invention, a substrate including a curved structure is provided, wherein a first side of the substrate has a first barrier layer and a second barrier layer has a second barrier layer, comprising:

[0035] A raw silicon wafer is provided, the raw silicon wafer including a warped structure;

[0036] The first barrier layer and the second barrier layer are formed on two opposite sides of the original silicon wafer, respectively, covering the convex side and the concave side of the warped structure to form the curved structure.

[0037] According to some embodiments of the present invention, after performing hydrogen ion overflow and / or hydrogen ion implantation treatment on the first barrier layer and / or the second barrier layer of the curved structure, the method further includes:

[0038] Remove the first barrier layer and the second barrier layer.

[0039] According to some embodiments of the present invention, a substrate including a curved structure is provided, wherein a first side of the substrate has a first barrier layer and a second barrier layer has a second barrier layer, comprising:

[0040] Provide a base;

[0041] The first barrier layer and the second barrier layer are formed on two oppositely arranged sides of the substrate, respectively;

[0042] The curved structure is formed by cooling the substrate, the first barrier layer, and the second barrier layer.

[0043] According to some embodiments of the present invention, the substrate is a semiconductor substrate.

[0044] According to some embodiments of the present invention, the method further includes:

[0045] Remove the first isolation layer and the second isolation layer.

[0046] The semiconductor structure of this invention is fabricated using any of the leveling methods described above.

[0047] One embodiment of the above invention has the following advantages or beneficial effects:

[0048] The leveling method of this invention, by employing openings to expose the curved structure and by performing hydrogen ion overflow and / or hydrogen ion implantation treatment on the first and / or second barrier layers of the curved structure, enables the leveling method of this embodiment to adjust local areas of the substrate. On one hand, the substrate treated by the leveling method of this invention exhibits better flatness. On the other hand, the leveling method of this invention can adjust substrates with complex deformations, and has the advantages of simple operation, flexibility, and wide applicability. Furthermore, by simultaneously treating the first and second barrier layers located on opposite sides, the leveling efficiency can be improved. Attached Figure Description

[0049] Figure 1 The diagram shows a flowchart of the leveling method according to an embodiment of the present invention.

[0050] Figures 2A to 2C The diagram shows the principle of using hydrogen ion overflow to adjust flatness.

[0051] Figures 3A to 3C The diagram shows the principle of using hydrogen ion implantation to adjust flatness.

[0052] Figures 4A to 4C The diagram shown is a schematic diagram of the leveling method of the present invention for leveling a substrate according to a first embodiment.

[0053] Figures 5A to 5C The diagram shown is a schematic diagram of the leveling method of the present invention for leveling a substrate according to a second embodiment.

[0054] Figures 6A to 6C The diagram shown is a schematic diagram of the leveling method of the present invention for leveling a substrate according to a third embodiment.

[0055] Figures 7A to 7C The diagram shown is a schematic diagram of the leveling method of the present invention for leveling a substrate according to the fourth embodiment.

[0056] The reference numerals in the attached figures are explained as follows:

[0057] 11. Hydrogen ions 12. Pores

[0058] 100, Substrate 101, Curved Structure

[0059] 102. First side 103. Second side

[0060] 110, First barrier layer; 120, Second barrier layer

[0061] 210. First isolation layer; 211. First opening

[0062] 220. Second isolation layer; 221. Second opening

[0063] F1, tension; F2, thrust Detailed Implementation

[0064] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, they are provided so that the invention will be thorough and complete, and the concept of the exemplary embodiments will be fully conveyed to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and therefore their detailed description will be omitted.

[0065] like Figure 1 As shown, Figure 1 The diagram shows a flowchart of a leveling method according to an embodiment of the present invention. The leveling method according to an embodiment of the present invention includes:

[0066] Step S102: Provide a substrate 100 including a curved structure 101, a first side 102 of the substrate 100 having a first barrier layer 110, a second side 103 of the substrate 100 having a second barrier layer 120, and the first side 102 and the second side 103 being disposed opposite to each other.

[0067] Step S104: A first isolation layer 210 with a first opening 211 is formed on the first barrier layer 110, and a second isolation layer 220 with a second opening 221 is formed on the second barrier layer 120, wherein the first opening 211 and / or the second opening 221 expose the curved structure 101.

[0068] Step S106: Perform hydrogen ion overflow and / or hydrogen ion implantation treatment on the first barrier layer 110 and / or the second barrier layer 120 of the curved structure 101.

[0069] The leveling method of this embodiment of the invention, by employing an opening to expose the curved structure 101 and by performing hydrogen ion overflow and / or hydrogen ion implantation treatment on the first barrier layer 110 and / or the second barrier layer 120 of the curved structure 101, enables the leveling method of this embodiment to adjust local areas of the substrate 100. On one hand, the substrate 100 treated by the leveling method of this embodiment of the invention exhibits better flatness. On the other hand, the leveling method of this embodiment of the invention can adjust the substrate 100 with complex deformation, and has the advantages of simple operation, flexibility, and wide applicability. Furthermore, by simultaneously treating the first barrier layer 110 and the second barrier layer 120 located on opposite sides, the leveling efficiency can be improved.

[0070] The principle of adjusting flatness through hydrogen ion overflow / injection in the embodiments of the present invention will be explained below with reference to the accompanying drawings.

[0071] like Figures 2A to 2C As shown, Figures 2A to 2C The diagram illustrates the principle of using hydrogen ion overflow to adjust flatness. (Example) Figure 2A As shown, hydrogen ions 11 escape from the material. Figure 2B As shown, after hydrogen ions 11 escape, a large number of pores 12 appear in the material. Figure 2C As shown, after a large amount of H2 is discharged, the material will shrink, which in turn creates an inward tensile force F1.

[0072] like Figures 3A to 3C As shown, Figures 3A to 3C The diagram illustrates the principle of using hydrogen ion implantation to adjust flatness. (For example...) Figure 3A As shown, pores 12 exist in the material. Figure 3B As shown, hydrogen ions 11 are injected and occupy the original pores 12 in the material. Figure 3C As shown, due to the injection of hydrogen ions 11 into the material, the original HX bonds in the material decompose, and HH bonds are bonded to form H2. This causes the material to expand, generating an outward thrust F2. Here, X represents other ions in the material that were originally bonded to hydrogen ions.

[0073] As described above, after hydrogen ion overflow treatment, an inward pulling force F1 is formed within the material. After hydrogen ion implantation treatment, an outward pushing force F2 is formed within the material. Therefore, the leveling method of this embodiment utilizes the inward pulling force F1 to treat the convex side of the curved structure 101 and utilizes the outward pushing force F2 to treat the concave side of the curved structure 101, ultimately achieving the leveling of the substrate 100.

[0074] like Figures 4A to 4C As shown, Figures 4A to 4CThe diagram shown illustrates a substrate leveled according to a first embodiment of the leveling method of the present invention. In this embodiment, the substrate 100 includes a plurality of curved structures 101. Since the raised and recessed sides of the plurality of curved structures 101 are arranged adjacent to each other, the substrate 100 of this embodiment generally forms a wavy, warped structure.

[0075] like Figure 4A As shown, a substrate 100 including a curved structure 101 is provided. A first side 102 of the substrate 100 has a first barrier layer 110, and a second side 103 of the substrate 100 has a second barrier layer 120. The first side 102 and the second side 103 are disposed opposite to each other.

[0076] It is understood that the materials of the first barrier layer 110 and the second barrier layer 120 may include silicon oxide, silicon oxynitride, or other suitable insulating barrier materials.

[0077] Furthermore, the first barrier layer 110 on the first side 102 of the substrate 100 can be one or more layers, where multiple layers refer to two or more layers. When the first barrier layer 110 is multiple layers, the materials of each first barrier layer 110 can be the same or different. For example, one first barrier layer 110 may be made of silicon oxide, and another first barrier layer 110 may be made of silicon oxynitride.

[0078] The second barrier layer 120 on the second side 103 of the substrate 100 can be one or more layers, where multiple layers refer to two or more layers. When the second barrier layer 120 is multiple layers, the materials of each second barrier layer 120 can be the same or different. For example, one second barrier layer 120 may be made of silicon oxide, and another second barrier layer 120 may be made of silicon oxynitride.

[0079] like Figure 4B As shown, a first isolation layer 210 with a first opening 211 is formed on the first barrier layer 110, and a second isolation layer 220 with a second opening 221 is formed on the second barrier layer 120, wherein the first opening 211 and / or the second opening 221 expose the curved structure 101; the first barrier layer 110 and / or the second barrier layer 120 of the curved structure 101 are subjected to hydrogen ion overflow and / or hydrogen ion implantation treatment.

[0080] Specifically, a first insulating layer 210 is formed on the first barrier layer 110, the first insulating layer 210 covering the convex side of the first portion of the plurality of curved structures 101, and exposing the concave side of the second portion of the plurality of curved structures 101 through the first opening 211. A second insulating layer 220 is formed on the second barrier layer 120, the second insulating layer 220 covering the convex side of the second portion of the plurality of curved structures 101, and exposing the concave side of the first portion of the plurality of curved structures 101 through the second opening 221.

[0081] In this embodiment, the first part of the plurality of curved structures 101 refers to Figure 4B The curved structure on both sides, the second part refers to Figure 4B The curved structure in the middle position.

[0082] The exposed first barrier layer 110 and second barrier layer 120 are subjected to hydrogen ion implantation.

[0083] In this embodiment, due to the hydrogen ion implantation process, an outward thrust F2 can be formed within the exposed first barrier layer 110 and second barrier layer 120, ultimately achieving a leveling effect. Furthermore, in this embodiment, by simultaneously performing hydrogen ion implantation on both sides of the substrate 100, the leveling effect is improved and the efficiency is increased.

[0084] In one embodiment, the materials of the first isolation layer 210 and the second isolation layer 220 may include silicon nitride, silicon carbonitride, or other suitable materials. It should be noted that the first isolation layer 210 and the second isolation layer 220 must possess the characteristics of blocking hydrogen ion diffusion and not reacting with the first barrier layer 110 and the second barrier layer 120.

[0085] In one embodiment, the hydrogen ion implantation step in the leveling method of this invention includes:

[0086] The barrier layer of the bent structure 101 is bombarded with ions, and the processing temperature is between 500°C and 700°C.

[0087] like Figure 4C As shown, under the action of thrust F2, a substrate 100 with better flatness is obtained. Furthermore, the first isolation layer 210 and the second isolation layer 220 are removed.

[0088] It should be noted that the first barrier layer 110 and the second barrier layer 120 can be removed or retained according to the needs of subsequent processes.

[0089] like Figures 5A to 5C As shown, Figures 5A to 5CThe diagram shown illustrates a substrate leveled according to a second embodiment of the leveling method of the present invention. In this embodiment, the substrate 100 includes a plurality of curved structures 101. Since the raised and recessed sides of the plurality of curved structures 101 are arranged adjacent to each other, the substrate 100 of this embodiment generally forms a wavy, warped structure.

[0090] like Figure 5A As shown, a substrate 100 including a curved structure 101 is provided. A first side 102 of the substrate 100 has a first barrier layer 110, and a second side 103 of the substrate 100 has a second barrier layer 120. The first side 102 and the second side 103 are disposed opposite to each other.

[0091] It is understood that the materials of the first barrier layer 110 and the second barrier layer 120 may include silicon oxide, silicon oxynitride, or other suitable insulating barrier materials.

[0092] Furthermore, the first barrier layer 110 on the first side 102 of the substrate 100 can be one or more layers, where multiple layers refer to two or more layers. When the first barrier layer 110 is multiple layers, the materials of each first barrier layer 110 can be the same or different. For example, one first barrier layer 110 may be made of silicon oxide, and another first barrier layer 110 may be made of silicon oxynitride.

[0093] The second barrier layer 120 on the second side 103 of the substrate 100 can be one or more layers, where multiple layers refer to two or more layers. When the second barrier layer 120 is multiple layers, the materials of each second barrier layer 120 can be the same or different. For example, one second barrier layer 120 may be made of silicon oxide, and another second barrier layer 120 may be made of silicon oxynitride.

[0094] like Figure 5B As shown, a first insulating layer 210 is formed on the first barrier layer 110, covering the recessed side of the second portion of the plurality of curved structures 101 and exposing the convex side of the first portion of the plurality of curved structures 101 through the first opening 211. A second insulating layer 220 is formed on the second barrier layer 120, covering the recessed side of the first portion of the plurality of curved structures 101 and exposing the convex side of the second portion of the plurality of curved structures 101 through the second opening 221.

[0095] In this embodiment, the first part of the plurality of curved structures 101 refers to Figure 4B The curved structure on both sides, the second part refers to Figure 4B The curved structure in the middle position.

[0096] The exposed first barrier layer 110 and second barrier layer 120 are subjected to hydrogen ion overflow treatment.

[0097] In this embodiment, due to the hydrogen ion overflow treatment, an inward pulling force F1 can be formed within the exposed first barrier layer 110 and second barrier layer 120, ultimately achieving a leveling effect. Furthermore, in this embodiment, by simultaneously performing hydrogen ion overflow treatment on the first barrier layer 110 and second barrier layer 120 on both sides of the substrate 100, the leveling effect is improved and the efficiency is higher.

[0098] In one embodiment, the hydrogen ion overflow treatment in the leveling method of this invention includes:

[0099] The barrier layer of the curved structure 101 is irradiated with a laser, and the processing temperature is greater than 1100℃.

[0100] like Figure 5C As shown, under the action of tensile force F1, a substrate 100 with better flatness is obtained. Furthermore, the first isolation layer 210 and the second isolation layer 220 are removed.

[0101] It should be noted that the first barrier layer 110 and the second barrier layer 120 can be removed or retained according to the needs of subsequent processes.

[0102] like Figures 6A to 6C , Figures 6A to 6C The diagram shown illustrates a substrate leveled according to a third embodiment of the leveling method of the present invention. In this embodiment, the substrate 100 includes a plurality of curved structures 101. Since the raised and recessed sides of the plurality of curved structures 101 are arranged adjacent to each other, the substrate 100 of this embodiment generally forms a wavy, warped structure.

[0103] like Figure 6A As shown, a substrate 100 including a curved structure 101 is provided. A first side 102 of the substrate 100 has a first barrier layer 110, and a second side 103 of the substrate 100 has a second barrier layer 120. The first side 102 and the second side 103 are disposed opposite to each other.

[0104] It is understood that the materials of the first barrier layer 110 and the second barrier layer 120 may include silicon oxide, silicon oxynitride, or other suitable insulating barrier materials.

[0105] Furthermore, the first barrier layer 110 on the first side 102 of the substrate 100 can be one or more layers, where multiple layers refer to two or more layers. When the first barrier layer 110 is multiple layers, the materials of each first barrier layer 110 can be the same or different. For example, one first barrier layer 110 may be made of silicon oxide, and another first barrier layer 110 may be made of silicon oxynitride.

[0106] The second barrier layer 120 on the second side 103 of the substrate 100 can be one or more layers, where multiple layers refer to two or more layers. When the second barrier layer 120 is multiple layers, the materials of each second barrier layer 120 can be the same or different. For example, one second barrier layer 120 may be made of silicon oxide, and another second barrier layer 120 may be made of silicon oxynitride.

[0107] like Figure 6B As shown, a first insulating layer 210 is formed on the first barrier layer 110, and a first opening 211 of the first insulating layer 210 exposes the convex and concave sides of a plurality of curved structures 101. A second insulating layer 220 is formed on the second barrier layer 120, and a second opening 221 of the second insulating layer 220 exposes the convex and concave sides of a plurality of curved structures 101. In other words, the convex and concave sides of each curved structure 101 are exposed to the outside through the first opening 211 and the second opening 221, respectively.

[0108] The first barrier layer 110 and the second barrier layer 120 of the curved structure 101 are subjected to hydrogen ion overflow treatment and hydrogen ion implantation treatment, respectively. The barrier layer subjected to hydrogen ion overflow treatment is located on the convex side of the curved structure 101, and the barrier layer subjected to hydrogen ion implantation treatment is located on the concave side of the curved structure 101.

[0109] In this embodiment, since hydrogen ion overflow and hydrogen ion injection are performed simultaneously on both sides of each curved structure 101, an inward tensile force F1 and an outward thrust F2 can be formed within each curved structure 101. Under the combined action of the tensile force F1 and the thrust F2, a leveling effect is ultimately achieved. Furthermore, in this embodiment, by performing hydrogen ion overflow and hydrogen ion injection treatments on the first barrier layer 110 and the second barrier layer 120 of the curved structure 101 respectively, the leveling effect is improved and the efficiency is higher.

[0110] In one embodiment, the hydrogen ion overflow treatment in the leveling method of this invention includes: irradiating the blocking layer of the curved structure 101 with a laser, and the treatment temperature is greater than 1100°C.

[0111] In one embodiment, the hydrogen ion implantation process in the leveling method of this invention includes: bombarding the barrier layer of the bent structure 101 with ions, and the processing temperature is between 500°C and 700°C.

[0112] like Figure 6C As shown, under the action of tensile force F1 and thrust force F2, a substrate 100 with better flatness is obtained. Furthermore, the first isolation layer 210 and the second isolation layer 220 are removed.

[0113] It should be noted that the first barrier layer 110 and the second barrier layer 120 can be removed or retained according to the needs of subsequent processes.

[0114] like Figures 7A to 7C , Figures 7A to 7C The diagram shown is a schematic representation of a substrate leveled according to a fourth embodiment of the leveling method of the present invention. In this embodiment, the substrate 100 includes two curved structures 101 located at both ends of the substrate 100, forming a generally saddle-shaped warped structure.

[0115] like Figure 7A As shown, a substrate 100 including a curved structure 101 is provided. A first side 102 of the substrate 100 has a first barrier layer 110, and a second side 103 of the substrate 100 has a second barrier layer 120. The first side 102 and the second side 103 are disposed opposite to each other.

[0116] It is understood that the materials of the first barrier layer 110 and the second barrier layer 120 may include silicon oxide, silicon oxynitride, or other suitable insulating barrier materials.

[0117] Furthermore, the first barrier layer 110 on the first side 102 of the substrate 100 can be one or more layers, where multiple layers refer to two or more layers. When the first barrier layer 110 is multiple layers, the materials of each first barrier layer 110 can be the same or different. For example, one first barrier layer 110 may be made of silicon oxide, and another first barrier layer 110 may be made of silicon oxynitride.

[0118] The second barrier layer 120 on the second side 103 of the substrate 100 can be one or more layers, where multiple layers refer to two or more layers. When the second barrier layer 120 is multiple layers, the materials of each second barrier layer 120 can be the same or different. For example, one second barrier layer 120 may be made of silicon oxide, and another second barrier layer 120 may be made of silicon oxynitride.

[0119] like Figure 7B As shown, a first insulating layer 210 is formed on the first barrier layer 110, and a first opening 211 of the first insulating layer 210 exposes the convex side of each curved structure 101. A second insulating layer 220 is formed on the second barrier layer 120, and a second opening 221 of the second insulating layer 220 exposes the concave side of each curved structure 101. In other words, the convex side and the concave side of each curved structure 101 are exposed to the outside through the first opening 211 and the second opening 221, respectively.

[0120] The first barrier layer 110 and the second barrier layer 120 of the curved structure 101 are subjected to hydrogen ion overflow treatment and hydrogen ion implantation treatment, respectively. The barrier layer subjected to hydrogen ion overflow treatment is located on the convex side of the curved structure 101, and the barrier layer subjected to hydrogen ion implantation treatment is located on the concave side of the curved structure 101.

[0121] In this embodiment, since hydrogen ion overflow and hydrogen ion injection are performed simultaneously on both sides of each curved structure 101, an inward tensile force F1 and an outward thrust F2 can be formed within each curved structure 101. Under the combined action of the tensile force F1 and the thrust F2, a leveling effect is ultimately achieved. Furthermore, in this embodiment, by performing hydrogen ion overflow and hydrogen ion injection treatments on the first barrier layer 110 and the second barrier layer 120 of the curved structure 101 respectively, the leveling effect is improved and the efficiency is higher.

[0122] In one embodiment, the hydrogen ion overflow treatment in the leveling method of this invention includes: irradiating the blocking layer of the curved structure 101 with a laser, and the treatment temperature is greater than 1100°C.

[0123] In one embodiment, the hydrogen ion implantation process in the leveling method of this invention includes: bombarding the barrier layer of the bent structure 101 with ions, and the processing temperature is between 500°C and 700°C.

[0124] like Figure 7C As shown, under the action of tensile force F1 and thrust force F2, a substrate 100 with better flatness is obtained. Furthermore, the first isolation layer 210 and the second isolation layer 220 are removed.

[0125] It should be noted that the first barrier layer 110 and the second barrier layer 120 can be removed or retained according to the needs of subsequent processes.

[0126] Of course, it is understood that in another embodiment, the substrate 100 may also have an inverted saddle-shaped warped structure, and its leveling method is similar to that of the above embodiment, which will not be described again here.

[0127] Additionally, it is worth mentioning that, for Figure 7A The substrate shown may be subjected to hydrogen ion overflow / implantation only on the exposed first barrier layer 110 or the second barrier layer 120.

[0128] Specifically, the first opening 211 of the first isolation layer 210 exposes the first barrier layer 210 of the curved structure 101, while the second isolation layer 220 has no opening and does not expose the second barrier layer 220 of the curved structure 101. Subsequently, only the exposed first barrier layer 210 is subjected to hydrogen ion overflow / implantation treatment.

[0129] Alternatively, the second opening 221 of the second isolation layer 220 exposes the second barrier layer 220 of the curved structure 101, while the first isolation layer 210 has no opening and does not expose the first barrier layer 210 of the curved structure 101. Then, only the exposed second barrier layer 220 is subjected to hydrogen ion overflow / implantation.

[0130] In one embodiment, the step of providing a substrate 100 including a curved structure 101, a first side 102 of the substrate 100 having a first barrier layer 110, and a second side 103 of the substrate 100 having a second barrier layer 120 includes:

[0131] A raw silicon wafer is provided, the raw silicon wafer including a warped structure;

[0132] A first barrier layer 110 and a second barrier layer 120 are formed on two opposite sides of the original silicon wafer. The first barrier layer 110 and the second barrier layer 120 cover the convex side and the concave side of the warped structure, respectively, forming a curved structure 101.

[0133] In this embodiment, the bending structure 101 in the substrate 100 is specifically defined as occurring on the original silicon wafer. Specifically, after the original silicon wafer is formed, it pre-exists a warped structure; that is, the original silicon wafer includes a warped structure. Subsequently, a first barrier layer 110 and a second barrier layer 120 are formed on two opposing sides of the original silicon wafer, thereby forming the substrate 100 including the bending structure 101. Finally, the substrate 100 can be leveled according to the scheme disclosed in the above embodiment, which will not be elaborated here.

[0134] Furthermore, when the bending structure 101 of the substrate 100 is generated on the original silicon wafer, after performing hydrogen ion overflow and / or hydrogen ion implantation on the first barrier layer 110 and / or the second barrier layer 120 of the bending structure 101, the leveling method of the present invention further includes: removing the first barrier layer 110 and the second barrier layer 120.

[0135] Specifically, since the original silicon wafer has not yet undergone subsequent semiconductor processing, the first barrier layer 110 and the second barrier layer 120 can be removed after leveling to facilitate subsequent processing of the original silicon wafer.

[0136] In another embodiment, the step of providing a substrate 100 including a curved structure 101, a first side 102 of the substrate 100 having a first barrier layer 110, and a second side 103 of the substrate 100 having a second barrier layer 120 includes:

[0137] Provide a base;

[0138] A first barrier layer 110 and a second barrier layer 120 are formed on two opposite sides of the substrate, respectively.

[0139] The curved structure 101 is formed by cooling the substrate, the first barrier layer 110, and the second barrier layer 120.

[0140] In this embodiment, the bending structure 101 in the substrate 100 is specifically defined as occurring after the wafer is completed. Specifically, during the cooling process, for example, when the temperature drops from 400°C to 25°C, thermal mismatch occurs between the substrate, the first barrier layer 110, and the second barrier layer 120, leading to warping deformation.

[0141] Furthermore, the substrate is a semiconductor substrate.

[0142] In some embodiments, the semiconductor substrate may include multiple doping configurations. For example, different doping profiles (such as n-type wells or p-type wells) may be formed in regions on the substrate, designed for different device types (such as n-type multi-gate transistors or p-type multi-gate transistors). Suitable doping methods may include ion implantation and / or diffusion processes. The substrate may have isolation structures sandwiched between the regions to provide different device types. The substrate may also include other semiconductors such as germanium, silicon carbide, silicon-germanium, or diamond. The substrate may instead include semiconductor compounds and / or semiconductor alloys. Furthermore, the substrate may, where appropriate, include an epitaxial layer (which may be stressed to improve performance), a silicon-on-insulator structure, and / or other suitable enhancing structures.

[0143] In another aspect, the present invention provides a semiconductor structure manufactured by the leveling method of any of the above embodiments.

[0144] In some implementations, the semiconductor structure may include additional transistors, bipolar junction transistors, resistors, capacitors, inductors, diodes, fuses, static random access memory, and / or other logic circuits.

[0145] In summary, the advantages and beneficial effects of the leveling method and semiconductor structure of the present invention include at least the following:

[0146] The leveling method of this embodiment of the invention, by employing an opening to expose the curved structure 101 and by performing hydrogen ion overflow and / or hydrogen ion implantation treatment on the first barrier layer 110 and / or the second barrier layer 120 of the curved structure 101, enables the leveling method of this embodiment to adjust local areas of the substrate 100. On one hand, the substrate 100 treated by the leveling method of this embodiment of the invention exhibits better flatness. On the other hand, the leveling method of this embodiment of the invention can adjust the substrate 100 with complex deformation, and has the advantages of simple operation, flexibility, and wide applicability. Furthermore, by simultaneously treating the first barrier layer 110 and the second barrier layer 120 located on opposite sides, the leveling efficiency can be improved.

[0147] In the embodiments of the invention, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance; the term "multiple" refers to two or more unless otherwise explicitly defined. The terms "install," "connect," "link," and "fix" should be interpreted broadly. For example, "connect" can be a fixed connection, a detachable connection, or an integral connection; "link" can be a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of the invention according to the specific circumstances.

[0148] In the description of the embodiments of the invention, it should be understood that the terms "upper", "lower", "left", "right", "front", "rear", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of the invention and simplifying the description, and do not indicate or imply that the device or unit referred to must have a specific orientation or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of the invention.

[0149] In the description of this specification, the terms "one embodiment," "some embodiments," "specific embodiment," etc., refer to a specific feature, structure, material, or characteristic described in connection with that embodiment or example, which is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0150] The above are merely preferred embodiments of the invention and are not intended to limit the scope of the invention. Those skilled in the art will recognize that various modifications and variations can be made to the invention. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the invention should be included within the protection scope of the invention.

Claims

1. A leveling method, characterized in that, include: A substrate including a curved structure is provided, wherein a first side of the substrate has a first barrier layer and a second side of the substrate has a second barrier layer, and the first side and the second side are disposed opposite to each other; A first isolation layer with a first opening is formed on the first barrier layer, and a second isolation layer with a second opening is formed on the second barrier layer, wherein the first opening and / or the second opening exposes the curved structure; as well as The first barrier layer and / or the second barrier layer of the curved structure are subjected to hydrogen ion overflow and / or hydrogen ion implantation treatment.

2. The leveling method according to claim 1, characterized in that, Performing hydrogen ion overflow and / or hydrogen ion implantation treatment on the first barrier layer and / or the second barrier layer of the curved structure includes: The first and second barrier layers of the curved structure are subjected to hydrogen ion overflow treatment and hydrogen ion implantation treatment, respectively. The barrier layer for hydrogen ion overflow treatment is located on the convex side of the curved structure, and the barrier layer for hydrogen ion implantation treatment is located on the concave side of the curved structure.

3. The leveling method according to claim 1, characterized in that, The substrate includes a plurality of the curved structures, and the plurality of curved structures are divided into a first part and a second part; A first isolation layer with a first opening is formed on the first barrier layer, and a second isolation layer with a second opening is formed on the second barrier layer, wherein the first opening and / or the second opening exposes the curved structure, including: The first isolation layer is formed on the first barrier layer, the first isolation layer covers the raised side of the first portion and exposes the recessed side of the second portion through the first opening; A second isolation layer is formed on the second barrier layer, the second isolation layer covering the raised side of the second portion and exposing the recessed side of the first portion through the second opening; Performing hydrogen ion overflow and / or hydrogen ion implantation treatment on the first barrier layer and / or the second barrier layer of the curved structure includes: The exposed first and second barrier layers are subjected to hydrogen ion implantation.

4. The leveling method according to claim 1, characterized in that, The substrate includes a plurality of the curved structures, and the plurality of curved structures are divided into a first part and a second part; A first isolation layer with a first opening is formed on the first barrier layer, and a second isolation layer with a second opening is formed on the second barrier layer, wherein the first opening and / or the second opening exposes the curved structure, including: The first isolation layer is formed on the first barrier layer, the first isolation layer covers the recessed side of the second portion, and exposes the convex side of the first portion through the first opening; A second isolation layer is formed on the second barrier layer, the second isolation layer covering the recessed side of the first portion and exposing the convex side of the second portion through the second opening; Performing hydrogen ion overflow and / or hydrogen ion implantation treatment on the first barrier layer and / or the second barrier layer of the curved structure includes: The exposed first and second barrier layers are subjected to hydrogen ion spillage treatment.

5. The leveling method according to claim 1, characterized in that, Hydrogen ion spillover treatment includes: Laser irradiation process is used.

6. The leveling method according to claim 5, characterized in that, Hydrogen ion overflow treatment also includes: The processing temperature is greater than 1100℃.

7. The leveling method according to claim 1, characterized in that, Hydrogen ion implantation treatment includes: Ion bombardment technology is employed.

8. The leveling method according to claim 7, characterized in that, Hydrogen ion overflow treatment also includes: The processing temperature is between 500℃ and 700℃.

9. The leveling method according to claim 1, characterized in that, Both the first barrier layer and the second barrier layer are made of silicon oxide or silicon oxynitride.

10. The leveling method according to claim 1, characterized in that, The materials of the first isolation layer and the second isolation layer include silicon nitride or silicon carbonitride.

11. The leveling method according to claim 1, characterized in that, A substrate including a curved structure is provided, wherein a first side of the substrate has a first barrier layer and a second barrier layer has a second side of the substrate, comprising: A raw silicon wafer is provided, the raw silicon wafer including a warped structure; The first barrier layer and the second barrier layer are formed on two opposite sides of the original silicon wafer, respectively, covering the convex side and the concave side of the warped structure to form the curved structure.

12. The leveling method according to claim 11, characterized in that, After subjecting the first barrier layer and / or the second barrier layer of the curved structure to hydrogen ion overflow and / or hydrogen ion implantation treatment, the method further includes: Remove the first barrier layer and the second barrier layer.

13. The leveling method according to claim 1, characterized in that, A substrate including a curved structure is provided, wherein a first side of the substrate has a first barrier layer and a second barrier layer has a second side of the substrate, comprising: Provide a base; The first barrier layer and the second barrier layer are formed on two oppositely arranged sides of the substrate, respectively; The curved structure is formed by cooling the substrate, the first barrier layer, and the second barrier layer.

14. The leveling method according to claim 13, characterized in that, The substrate is a semiconductor substrate.

15. The leveling method according to claim 1, characterized in that, The method further includes: Remove the first isolation layer and the second isolation layer.

16. A semiconductor structure, characterized in that, It is manufactured using the leveling method described in any one of claims 1 to 15.

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