用于控制氮化物基开关装置的电压尖峰吸收控制器及方法
By designing a voltage spike absorption controller, the drain-source voltage of the GaN switching device is sensed and controlled, solving the problem of GaN switching devices being damaged in flyback converters due to avalanche breakdown capability, and achieving effective absorption and protection against transient spike voltages.
CN115956334BActive Publication Date: 2026-07-17INNOSCIENCE (SHENZHEN) SEMICON CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- INNOSCIENCE (SHENZHEN) SEMICON CO LTD
- Filing Date
- 2022-11-21
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
GaN switching devices lack avalanche breakdown capability in flyback converters, leading to device damage during high voltage spikes. Existing technologies struggle to effectively control voltage spikes.
Method used
A voltage spike absorption controller is designed, comprising a VCC node, a GND node, a CTRL node, a DS node, a voltage regulator, a voltage divider, a comparator, a driver, and an OR gate. By sensing the drain-source voltage, it generates a control signal to turn on the nitride-based switching device and absorb transient voltage spikes.
Benefits of technology
It effectively absorbs transient voltage spikes, preventing the voltage stress on the drain terminal of the GaN switch from exceeding the breakdown voltage and protecting the device from damage.
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Figure CN115956334B_ABST
Abstract
本公开提供一种用于控制氮化物基开关装置的电压尖峰吸收控制器。所述电压尖峰吸收控制器包含：电压调节器，其被配置成接收DC电源且产生已调节的DC电压；分压器，其被配置成接收漏极‑源极电压且对所述漏极‑源极电压进行分压以产生分压；驱动器，其被配置成接收参考电压且产生驱动电压；比较器，其被配置成将所述分压与所述参考电压进行比较，并产生比较输出电压，使得当所述分压大于所述参考电压时，所述比较输出电压具有高电平值；或门，其被配置成接收所述比较输出电压和所述驱动电压，且产生用于控制所述氮化物基开关装置的控制电压，使得当所述氮化物基开关装置上的所述漏极‑源极电压高于阈值时，所述氮化物基开关装置接通。
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