一种应用于MEMS器件的温度补偿方法

By constructing a temperature compensation parameter table and using real-time querying, the accuracy and storage capacity issues of MEMS inertial sensors across the entire temperature range were solved, achieving efficient temperature compensation and fast querying, and improving the temperature characteristics of MEMS devices.

CN115962789BActive Publication Date: 2026-07-17CHINA ELECTRONICS TECH GRP NO 26 RES INST

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
CHINA ELECTRONICS TECH GRP NO 26 RES INST
Filing Date
2022-11-22
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Traditional temperature compensation methods for MEMS inertial sensors suffer from low accuracy and large data storage capacity across the entire temperature range. In particular, they are not effective in compensating for non-smooth, uneven characteristic curves, and traditional methods use a single axial temperature for compensation.

Method used

A temperature compensation parameter table is constructed. The temperature of each axis of the MEMS device is collected in real time. The temperature compensation parameter index number is calculated, and the temperature compensation parameter table is queried by the index number for compensation. The corresponding temperature compensation parameter is compensated by the temperature of each axis. After being expanded by a fixed factor, it is stored in short type to reduce storage capacity.

Benefits of technology

It improves the temperature performance of MEMS devices across the entire temperature range, enables fast lookup and online temperature compensation, reduces storage capacity, and improves compensation accuracy.

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Abstract

本发明属于MEMS器件的温度补偿技术领域,具体涉及一种应用于MEMS器件的温度补偿方法,该方法包括:构建温度补偿参数表;实时采集MEMS器件的各轴向温度,根据实时获取的轴向温度计算MEMS器件的温补参数索引号;根据温补参数索引号在温度补偿参数表中进行查询,根据查询结果对MEMS器件的温度进行补偿;针对传统的温度补偿参数矩阵采用double类型,存储容量大等问题,本发明采用各自轴向温度分别补偿对应轴向温补参数,对温补参数扩大固定倍数后,采用short型进行存储,提高各轴向温补效果同时,缩小温补参数矩阵存储容量。
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