Method and apparatus for detecting abnormality of photoelectric parameter

Abstract

The present disclosure provides a photoelectric parameter anomaly detection method and device, belonging to the field of optoelectronic technology. The anomaly detection method comprises: obtaining test values and back test values of photoelectric parameters of each light emitting diode on a wafer; determining a comparison value of the test value and the back test value of the same light emitting diode, the comparison value being used to indicate the change amplitude between the test value and the back test value; determining a difference between the comparison values of two adjacent light emitting diodes as a jitter value; and if the jitter value exceeds a set amplitude, determining that the test value of the wafer is abnormal. The present disclosure can improve the detection efficiency of the test value anomaly of the light emitting diode on the wafer, reduce the artificial work intensity, and improve the production efficiency of the light emitting diode.

Description

Technical Field

[0001] This disclosure relates to the field of optoelectronic technology, and in particular to a method and apparatus for detecting anomalies in photoelectric parameters. Background Technology

[0002] During the testing of the photoelectric parameters of LEDs using a testing machine, the test values ​​of photoelectric parameters (brightness and voltage of LEDs) are easily affected by changes in the state of the test probes of the testing machine, causing the test values ​​of photoelectric parameters to deviate from the true values.

[0003] In related technologies, manual calibration is required to determine whether there are any deviations or anomalies in the test values ​​of photoelectric parameters. However, there are usually a large number of light-emitting diodes on a wafer, and calibrating them one by one would consume a lot of manpower and affect the production efficiency of light-emitting diodes. Summary of the Invention

[0004] This disclosure provides a method and apparatus for detecting abnormal photoelectric parameters, which can improve the detection efficiency of abnormal test values ​​of light-emitting diodes (LEDs) on wafers, reduce manual labor intensity, and improve the production efficiency of LEDs. The technical solution is as follows:

[0005] This disclosure provides a method for detecting anomalies in photoelectric parameters. The method includes: acquiring test values ​​and backtest values ​​of the photoelectric parameters of each light-emitting diode (LED) on a wafer, wherein the test values ​​and backtest values ​​are data obtained by testing with different testing machines; determining a comparison value between the test value and the backtest value of the same LED, wherein the comparison value is used to indicate the range of change between the test value and the backtest value; determining the difference between the comparison values ​​of two adjacent LEDs as a fluctuation value; and determining that the test values ​​of the wafer are abnormal if the fluctuation value exceeds a set range.

[0006] In one implementation of this disclosure, when the photoelectric parameter is the brightness value of a light-emitting diode, the comparison value is the ratio of the difference between the test value and the backtest value to the backtest value.

[0007] In another implementation of this disclosure, when the photoelectric parameter is the voltage of a light-emitting diode, the comparison value is the difference between the test value and the backtest value.

[0008] In another implementation provided in this disclosure, determining the difference between the comparison values ​​of two adjacent light-emitting diodes as the fluctuation value includes: determining the difference between the comparison values ​​of two adjacent light-emitting diodes in the same column or row on the wafer as the fluctuation value.

[0009] In another implementation of this disclosure, the photoelectric parameters further include the wavelength of the light emitted by the light-emitting diode. After obtaining the test values ​​and backtest values ​​of the photoelectric parameters of each light-emitting diode on the wafer, the method further includes: determining the wavelength difference of each light-emitting diode, wherein the wavelength difference is the difference between the wavelength in the test value and the wavelength in the backtest value; if the wavelength difference is outside the set range, then the test values ​​and backtest values ​​of the photoelectric parameters of each light-emitting diode on the wafer are obtained again.

[0010] This disclosure provides an anomaly detection device for photoelectric parameters. The anomaly detection device includes: an acquisition module for acquiring test values ​​and backtest values ​​of photoelectric parameters of each light-emitting diode on a wafer, wherein the test values ​​and backtest values ​​are data obtained by testing with different testing machines; a first determination module for determining a comparison value between the test value and the backtest value of the same light-emitting diode, wherein the comparison value is used to indicate the variation range between the test value and the backtest value; a second determination module for determining the difference between the comparison values ​​of two adjacent light-emitting diodes as a fluctuation value; and a judgment module for determining that the test values ​​of the wafer are abnormal if the fluctuation value exceeds a set range.

[0011] In another implementation of this disclosure, when the photoelectric parameter is the brightness value of a light-emitting diode, the comparison value is the ratio of the difference between the test value and the backtest value to the backtest value.

[0012] In another implementation of this disclosure, when the photoelectric parameter is the voltage of a light-emitting diode, the comparison value is the difference between the test value and the backtest value.

[0013] In another implementation of the present disclosure, the second determining module is further configured to determine the difference between the comparison values ​​of two adjacent light-emitting diodes in the same column or row on the wafer as the fluctuation value.

[0014] In another implementation of this disclosure, the photoelectric parameters further include the wavelength of light emitted by the light-emitting diodes, and the anomaly detection device further includes a third determining module, which is used to determine the wavelength difference of each light-emitting diode, wherein the wavelength difference is the difference between the wavelength in the test value and the wavelength in the backtest value; the acquisition module is further used to reacquire the test value and backtest value of the photoelectric parameters of each light-emitting diode on the wafer if the wavelength difference is outside the set range.

[0015] The beneficial effects of the technical solutions provided in this disclosure include at least the following:

[0016] The anomaly detection method provided in this disclosure first acquires the test values ​​and backtest values ​​of all light-emitting diodes (LEDs) on the wafer. Then, it determines the comparison value of the photoelectric parameters of the same LED, where the comparison value indicates the range of change between the test value and the backtest value. Next, it determines the fluctuation value of two adjacent LEDs, which indicates the range of change in the comparison value between adjacent LEDs. Normally, when the test values ​​obtained by the test probes are normal or without errors, the fluctuation range of the comparison values ​​of adjacent LEDs is also small. Therefore, when the fluctuation value of adjacent LEDs exceeds a set range, it indicates that the fluctuation range of the comparison values ​​of adjacent LEDs is large, thus indicating an anomaly in the wafer's test values. This method of automatically identifying and judging whether test values ​​are abnormal through machine data effectively reduces manual workload, improves the detection efficiency of abnormal test values ​​of LEDs on the wafer, and increases the production efficiency of LEDs. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a flowchart of a method for detecting abnormal photoelectric parameters provided in an embodiment of this disclosure;

[0019] Figure 2 This is a flowchart of another method for detecting abnormal photoelectric parameters provided in this embodiment of the disclosure;

[0020] Figure 3 This is an abnormal photoelectric parameter detection device provided in an embodiment of the present disclosure;

[0021] Figure 4 This is a structural block diagram of a computer device provided in an embodiment of this disclosure. Detailed Implementation

[0022] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0023] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” “third,” and similar terms used in this patent application specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms “an” or “a” and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms “comprising” or “including” and similar terms mean that the elements or objects preceding “comprising” or “including” encompass the elements or objects listed following “comprising” or “including” and their equivalents, and do not exclude other elements or objects. The terms “connected” or “linked” and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms “upper,” “lower,” “left,” “right,” “top,” and “bottom,” etc., are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described objects changes.

[0024] Figure 1 This is a flowchart of a method for detecting abnormal photoelectric parameters provided in an embodiment of this disclosure. Figure 1 As shown, this anomaly detection method is executed by a host computer and includes:

[0025] Step 101: Obtain the test values ​​and backtest values ​​of the photoelectric parameters of each light-emitting diode on the wafer.

[0026] The photoelectric parameters may include the wavelength of light, the brightness of the light-emitting diode, and the voltage. The test values ​​and feedback values ​​are data obtained by testing with different testing machines.

[0027] Step 102: Determine the comparison value between the test value and the backtest value of the same LED.

[0028] The comparison value is used to indicate the magnitude of change between the test value and the backtest value.

[0029] For example, when the photoelectric parameter is voltage, the comparison value is the difference between the voltage in the test value and the voltage in the retest value. The voltage difference is the magnitude of change between the test value and the retest value.

[0030] Step 103: Determine the difference between the comparison values ​​of two adjacent LEDs as the fluctuation value.

[0031] Step 104: If the fluctuation value exceeds the set range, it is determined that the test value of the wafer is abnormal.

[0032] In this embodiment of the disclosure, if the fluctuation value does not exceed the set range, it indicates that the test value of the wafer is not abnormal.

[0033] The anomaly detection method provided in this disclosure first acquires the test values ​​and backtest values ​​of all light-emitting diodes (LEDs) on the wafer. Then, it determines the comparison value of the photoelectric parameters of the same LED, where the comparison value indicates the range of change between the test value and the backtest value. Next, it determines the fluctuation value of two adjacent LEDs, which indicates the range of change in the comparison value between adjacent LEDs. Normally, when the test values ​​obtained by the test probes are normal or without errors, the fluctuation range of the comparison values ​​of adjacent LEDs is also small. Therefore, when the fluctuation value of adjacent LEDs exceeds a set range, it indicates that the fluctuation range of the comparison values ​​of adjacent LEDs is large, thus indicating an anomaly in the wafer's test values. This method of automatically identifying and judging whether test values ​​are abnormal through machine data effectively reduces manual workload, improves the detection efficiency of abnormal test values ​​of LEDs on the wafer, and increases the production efficiency of LEDs.

[0034] Figure 2 This is a flowchart of another method for detecting abnormal photoelectric parameters provided in an embodiment of this disclosure. Figure 2 As shown, this anomaly detection method is executed by a host computer and includes:

[0035] Step 201: Obtain the test values ​​and backtest values ​​of the photoelectric parameters of each light-emitting diode on the wafer.

[0036] The photoelectric parameters may include the wavelength of light, the brightness of the light-emitting diode, and the voltage.

[0037] In this embodiment of the disclosure, the photoelectric parameters may include at least one of the brightness value and voltage of the light-emitting diode.

[0038] After wafer fabrication is completed, the photoelectric parameters of the light-emitting diodes (LEDs) on the wafer can be tested using a testing machine to obtain the test values ​​of the LEDs' photoelectric parameters. These test values ​​can be stored in the host computer's memory for later retrieval.

[0039] For example, the test machine and the host computer can be connected by wire or wireless means, so that the host computer can obtain the test values ​​detected by the test machine and store the test values ​​in the storage unit.

[0040] For example, when testing a wafer with a testing machine, the wafer is tested row by row or column by column to obtain the photoelectric parameters of the light-emitting diodes in each column or row on the wafer, thereby improving the testing speed.

[0041] The backtest values ​​can be obtained by testing the photoelectric parameters of the light-emitting diodes on the wafer using a backtesting machine. These backtest values ​​can be stored in the host computer's memory for later retrieval.

[0042] In this embodiment of the disclosure, both the backtesting machine and the testing machine are testing devices capable of testing the photoelectric parameters of light-emitting diodes.

[0043] For example, the backtesting unit and the host computer can be connected by wired or wireless means, so that the host computer can obtain the backtesting values ​​detected by the backtesting unit and store the backtesting values ​​in the storage unit.

[0044] For example, when testing a wafer using a test-back machine, the wafer is tested row by row or column by column to obtain the backtest values ​​of the photoelectric parameters of the light-emitting diodes in each column or row on the wafer, thereby improving the backtesting speed.

[0045] Step 202: Determine the wavelength difference of each LED.

[0046] The wavelength difference is the difference between the wavelength in the test value and the wavelength in the backtest value.

[0047] Step 202a: If the wavelength difference is within the set range, then the test value and the backtest value are determined to be the photoelectric parameters of the same light-emitting diode.

[0048] Step 202b: If the wavelength difference is outside the set range, then reacquire the test values ​​and backtest values ​​of the photoelectric parameters of each light-emitting diode on the wafer.

[0049] Because the wavelength measurement value of a light-emitting diode (LED) is relatively stable and not easily affected by external factors, the wavelength difference can be used to determine whether the current test value and the backtest value come from the same LED.

[0050] One method is to determine whether the test value and the backtest value are the photoelectric parameters of the same light-emitting diode by checking whether the wavelength difference is within the set range.

[0051] For example, the setting range can be from -50nm to 50nm.

[0052] For example, when the wavelength difference is within -50nm to 50nm, the test value and the backtest value are determined to be the photoelectric parameters of the same light-emitting diode.

[0053] For example, if the wavelength difference is outside the range of -50nm to 50nm, it is necessary to reacquire the test value and the retest value.

[0054] The reacquired test values ​​can be the photoelectric parameter test values ​​obtained by retesting with a testing machine. The reacquired retest values ​​can be the photoelectric parameter retest values ​​obtained by retesting with a retesting machine.

[0055] Step 203: Determine the comparison between the measured value and the backtested value of the brightness or voltage in the photoelectric parameters of the same light-emitting diode.

[0056] In this embodiment of the disclosure, when the photoelectric parameter is the brightness value of the light-emitting diode, the comparison value is the ratio of the difference between the test value and the retest value to the retest value. That is, comparison value = (test value - retest value) / retest value.

[0057] In this embodiment of the disclosure, when the photoelectric parameter is the voltage of the light-emitting diode, the comparison value is the difference between the test value and the backtest value. That is, test value = test value - backtest value.

[0058] Step 204: Determine the difference between the comparison values ​​of two adjacent LEDs as the fluctuation value.

[0059] Here, two adjacent LEDs can refer to two LEDs that are adjacent to each other in the same column or row on the wafer. Therefore, the jump value is the difference in comparison values ​​between two adjacent LEDs in the same column or row on the wafer.

[0060] For example, two adjacent light-emitting diodes in the same column on a wafer can be two light-emitting diodes that are adjacent from top to bottom in a column of light-emitting diodes; or two light-emitting diodes that are adjacent from bottom to top in a column of light-emitting diodes.

[0061] For example, two adjacent light-emitting diodes in the same row on a wafer can be two adjacent light-emitting diodes in a row of light-emitting diodes, from left to right; or two adjacent light-emitting diodes in a row of light-emitting diodes, from right to left.

[0062] Regardless of whether the comparison method is in the same row or the same column, when comparing the difference between two adjacent LEDs, each LED can be compared only once, such as comparing the first and second, the third and fourth, and so on; or each LED can be compared twice, such as comparing the first and second, the second and third, the third and fourth, and so on.

[0063] Step 205: If the fluctuation value exceeds the set range, it is determined that the test value of the wafer is abnormal.

[0064] When the photoelectric parameter is the brightness value, the test value, backtest value, comparison value and fluctuation value of each light-emitting diode on the wafer are shown in Table 1 below.

[0065] Table 1

[0066]

[0067]

[0068]

[0069] In this embodiment of the disclosure, when the photoelectric parameter is a brightness value, the setting range can be from -1% to 1%.

[0070] According to Table 1, the fluctuation value of the LEDs in the second to last and third to last rows of Table 1 is -3.26%, which exceeds the set range. Therefore, it can be determined that the test values ​​of the wafers in the example in Table 1 are abnormal.

[0071] When the photoelectric parameter is voltage, the test value, backtest value, comparison value and fluctuation value of each light-emitting diode on the wafer are shown in Table 2 below.

[0072] Table 2

[0073]

[0074]

[0075] In this embodiment of the disclosure, when the photoelectric parameter is voltage, the set amplitude can be from -0.003 to 0.003.

[0076] According to Table 2, the fluctuation value of the LEDs in rows 29 and 30 of Table 2 is 0.006, which exceeds the set range. Therefore, it can be determined that the test value of the wafer in the example in Table 2 is abnormal.

[0077] In this embodiment of the disclosure, when an abnormality is detected in the test value, a technician can further determine whether the test value is abnormal to ensure that no error occurs.

[0078] At the same time, abnormal test values ​​can be corrected. Specifically, the photoelectric parameters of the corresponding light-emitting diode can be retested and the erroneous test values ​​can be replaced and corrected.

[0079] Figure 3 This is an embodiment of an anomaly detection device for photoelectric parameters provided in this disclosure. For example... Figure 3 As shown, the photoelectric parameter anomaly detection device includes: an acquisition module 301, used to acquire the test values ​​and backtest values ​​of the photoelectric parameters of each light-emitting diode on the wafer, wherein the test values ​​and backtest values ​​are data obtained by testing with different testing machines; a first determination module 302, used to determine the comparison value between the test value and the backtest value of the same light-emitting diode, wherein the comparison value is used to indicate the change range between the test value and the backtest value; a second determination module 303, used to determine the difference between the comparison values ​​of two adjacent light-emitting diodes as the fluctuation value; and a judgment module 304, used to determine that the test value of the wafer is abnormal if the fluctuation value exceeds a set range.

[0080] Optionally, when the photoelectric parameter is the brightness value of the light-emitting diode, the comparison value is the ratio of the difference between the test value and the backtest value to the backtest value.

[0081] Optionally, when the photoelectric parameter is the voltage of the light-emitting diode, the comparison value is the difference between the test value and the backtest value.

[0082] Optionally, the second determining module 303 is further configured to determine the difference between the comparison values ​​of two adjacent light-emitting diodes in the same column or row on the wafer as the fluctuation value.

[0083] Optionally, the photoelectric parameters also include the wavelength of the light emitted by the light-emitting diode. The anomaly detection device also includes a third determining module 305, which is used to determine the wavelength difference of each light-emitting diode. The wavelength difference is the difference between the wavelength in the test value and the wavelength in the retest value. The acquisition module 301 is also used to reacquire the test value and retest value of the photoelectric parameters of each light-emitting diode on the wafer if the wavelength difference is outside the set range.

[0084] Figure 4 This is a structural block diagram of a computer device provided in an embodiment of this disclosure. For example... Figure 4 As shown, the computer device includes a processor 501 and a memory 502.

[0085] Processor 501 may include one or more processing cores, such as a quad-core processor, an octa-core processor, etc. Processor 501 may be implemented using at least one hardware form selected from DSP (Digital Signal Processing), FPGA (Field-Programmable Gate Array), and PLA (Programmable Logic Array). Processor 501 may also include a main processor and a coprocessor. The main processor, also known as a CPU (Central Processing Unit), is used to process data in the wake-up state; the coprocessor is a low-power processor used to process data in the standby state. In some embodiments, processor 501 may integrate a GPU (Graphics Processing Unit), which is responsible for rendering and drawing the content to be displayed on the screen. In some embodiments, processor 501 may also include an AI (Artificial Intelligence) processor, which is used to handle computational operations related to machine learning.

[0086] The memory 502 may include one or more computer-readable storage media, which may be non-transitory. The memory 502 may also include high-speed random access memory and non-volatile memory, such as one or more disk storage devices or flash memory devices. In some embodiments, the non-transitory computer-readable storage media in the memory 502 is used to store at least one instruction, which is executed by the processor 501 to implement the photoelectric parameter anomaly detection method provided in the method embodiments of this application.

[0087] In some embodiments, the computer device may also optionally include: a peripheral device interface 503 and at least one peripheral device. The processor 501, memory 502, and peripheral device interface 503 can be connected via a bus or signal line. Each peripheral device can be connected to the peripheral device interface 503 via a bus, signal line, or circuit board.

[0088] Those skilled in the art will understand that Figure 4 The structure shown does not constitute a limitation on the computer device and may include more or fewer components than shown, or combine certain components, or use different component arrangements.

[0089] This disclosure also provides a non-transitory computer-readable storage medium storing computer instructions for causing a computer to execute the photoelectric parameter anomaly detection method described in the above embodiments. For example, the computer-readable storage medium may be a ROM, random access memory (RAM), CD-ROM, magnetic tape, floppy disk, or optical data storage device.

[0090] Those skilled in the art will understand that all or part of the steps of the above embodiments can be implemented by hardware or by a program instructing related hardware. The program can be stored in a computer-readable storage medium, such as a read-only memory, a disk, or an optical disk.

[0091] The above is not intended to limit this disclosure in any way. Although this disclosure has been disclosed above through embodiments, it is not intended to limit this disclosure. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the technical solution of this disclosure. Any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of this disclosure without departing from the content of the technical solution of this disclosure shall still fall within the scope of the technical solution of this disclosure.

Claims

1. A method for detecting anomalies in photoelectric parameters, characterized in that, The anomaly detection method includes: The photoelectric parameters of each light-emitting diode on the wafer are obtained by test and backtest values. The test and backtest values ​​are data obtained by testing with different test machines. The photoelectric parameters include the wavelength of light, the brightness value of the light-emitting diode, and the voltage. Determine the wavelength difference for each light-emitting diode, wherein the wavelength difference is the difference between the wavelength in the test value and the wavelength in the backtest value; If the wavelength difference is within the set range, then the test value and the backtest value are determined to be the photoelectric parameters of the same light-emitting diode; If the wavelength difference is outside the set range, the test values ​​and backtest values ​​of the photoelectric parameters of each light-emitting diode on the wafer are reacquired. Determine a comparison value between the test value and the backtest value for the same light-emitting diode, the comparison value being used to indicate the magnitude of change between the test value and the backtest value; The difference between the comparison values ​​of two adjacent light-emitting diodes is determined as the fluctuation value; If the fluctuation value exceeds the set range, it is determined that the test value of the wafer is abnormal.

2. The anomaly detection method according to claim 1, characterized in that, When the photoelectric parameter is the brightness value of the light-emitting diode, the comparison value is the ratio of the difference between the test value and the backtest value to the backtest value.

3. The anomaly detection method according to claim 1, characterized in that, When the photoelectric parameter is the voltage of the light-emitting diode, the comparison value is the difference between the test value and the backtest value.

4. The anomaly detection method according to any one of claims 1 to 3, characterized in that, The step of determining the difference between the comparison values ​​of two adjacent light-emitting diodes as the fluctuation value includes: The difference in the contrast values ​​of two adjacent light-emitting diodes in the same column or row on the wafer is determined as the jitter value.

5. A device for detecting abnormal photoelectric parameters, characterized in that, The anomaly detection device includes: The acquisition module is used to acquire the test values ​​and backtest values ​​of the photoelectric parameters of each light-emitting diode on the wafer. The test values ​​and backtest values ​​are data obtained by testing with different testing machines. The photoelectric parameters include the wavelength of light, the brightness value of the light-emitting diode, and the voltage. The first determining module is used to determine a comparison value between the test value and the backtest value of the same light-emitting diode, wherein the comparison value is used to indicate the range of change between the test value and the backtest value; The second determining module is used to determine the difference between the comparison values ​​of two adjacent light-emitting diodes as the fluctuation value; The determination module is used to determine that the test value of the wafer is abnormal if the fluctuation value exceeds a set range; The third determining module is used to determine the wavelength difference of each light-emitting diode, wherein the wavelength difference is the difference between the wavelength in the test value and the wavelength in the backtest value; the acquisition module is further used to determine that the test value and the backtest value are the photoelectric parameters of the same light-emitting diode if the wavelength difference is within a set range; if the wavelength difference is outside the set range, the test value and the backtest value of the photoelectric parameters of each light-emitting diode on the wafer are reacquired.

6. The anomaly detection device according to claim 5, characterized in that, When the photoelectric parameter is the brightness value of the light-emitting diode, the comparison value is the ratio of the difference between the test value and the backtest value to the backtest value.

7. The anomaly detection device according to claim 5, characterized in that, When the photoelectric parameter is the voltage of the light-emitting diode, the comparison value is the difference between the test value and the backtest value.

8. The anomaly detection device according to any one of claims 5 to 7, characterized in that, The second determining module is further configured to determine the difference between the comparison values ​​of two adjacent light-emitting diodes in the same column or row on the wafer as the fluctuation value.

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