SnTe / SnO2氨气气体传感器及制备方法
By growing SnO2 on the surface of SnTe to form a heterojunction, SnTe/SnO2 nanomaterials were prepared, which solved the problem of insufficient response of SnTe gas sensors to low concentrations of ammonia, and achieved high response value and selectivity, making it suitable for ammonia monitoring at room temperature.
CN115963154BActive Publication Date: 2026-07-17DALIAN UNIV OF TECH
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- DALIAN UNIV OF TECH
- Filing Date
- 2023-02-10
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing SnTe gas sensors have low response to low concentrations of ammonia and insufficient performance at room temperature, failing to effectively monitor ammonia concentrations.
Method used
A heterojunction composite nanomaterial, SnO2, is grown on the surface of SnTe using a hydrothermal method to enhance the specific surface area and carrier concentration of the material. This enables the fabrication of a SnTe/SnO2 heterojunction gas sensor, which utilizes a PN junction to improve response performance.
Benefits of technology
The response value and selectivity of the ammonia gas sensor have been improved, enabling stable operation at room temperature, reducing energy consumption and slowing down material aging.
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Figure CN115963154B_ABST
Abstract
本发明属于气体传感器技术领域，提供了一种SnTe / SnO2氨气气体传感器及制备方法。该SnTe / SnO2氨气气体传感器包括气体敏感材料和加热电极，气体敏感材料均匀涂覆于加热电极的表面；气体敏感材料形貌为均匀分布二氧化锡纳米颗粒的片状SnTe，具有较大的表面积‑体积比结构，可以在室温条件下实现对气体的检测。本发明采用水热法制备获得一种异质结复合纳米材料，其原材料获取方便、价格低廉、制备过程简单。
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