Equipment for processing substrates and equipment for measuring concentration

Abstract

A concentration measuring device is provided that measures the concentration of a fluid in a high-pressure environment, such as an environment in which a supercritical fluid is provided. The concentration measuring device includes: a concentration meter for measuring the concentration of a first fluid contained in a fluid in a measuring line; a sampling line for conveying process fluid from a processing space to the measuring line, in which a substrate is processed under high pressure; a control valve for opening and closing the sampling line; a fluid pressure regulator installed downstream of the control valve in the sampling line and configured to adjust the fluid passing through to a set pressure; and a pressure reducing tank installed between the sampling line and the measuring line.

Description

Technical Field

[0001] The present invention relates to an apparatus for processing a substrate and an apparatus for measuring concentration. Background Technology

[0002] Generally, semiconductor devices are manufactured from substrates such as wafers. In particular, semiconductor devices are manufactured by forming fine circuit patterns on the upper surface of the substrate through processes such as deposition, photolithography, cleaning, drying, and etching.

[0003] Generally, cleaning processes include chemical treatment to remove foreign matter from the substrate by supplying chemicals to the substrate, rinsing treatment to remove residual chemicals from the substrate by supplying liquid to the substrate, and drying treatment to remove residual liquid from the substrate.

[0004] Supercritical fluids are used for the drying process of substrates. According to one example, after replacing the purified water on the substrate with an organic solvent, supercritical fluid is supplied to the substrate in a vessel to dissolve any residual organic solvent in the supercritical fluid and remove the organic solvent from the substrate. Isopropanol (hereinafter, IPA) is used as an example of an organic solvent. Carbon dioxide (CO2), which has a relatively low critical temperature and critical pressure and in which IPA dissolves well, is used as an example of a supercritical fluid.

[0005] Because the interior of the vessel is under high pressure during the process, it is impossible to measure the concentration of organic solvents contained in the supercritical fluid in real time during the process. Alternatively, an indirect method can be used to measure the concentration of residual fumes after the process is complete, but it is impossible to observe changes in the concentration of chemical liquids (such as organic solvents) inside the vessel in real time. Summary of the Invention

[0006] This invention aims to provide a substrate processing device capable of efficiently processing substrates.

[0007] The present invention aims to provide a substrate processing apparatus and a concentration measuring apparatus capable of measuring the concentration of a chemical liquid at a predetermined time point, even during the process, as desired.

[0008] The present invention aims to provide a substrate processing apparatus and a concentration measurement device that can monitor the concentration of chemical liquids during the process and thus improve the process performance.

[0009] The problems to be solved by this invention are not limited to those described above. Those skilled in the art will clearly understand any problems not mentioned below based on the following description.

[0010] An exemplary embodiment of the present invention provides an apparatus for measuring concentration, the apparatus measuring the concentration of a fluid in a high-pressure environment, such as an environment in which a supercritical fluid is provided, the apparatus comprising: a concentration meter for measuring the concentration of a first fluid contained in a fluid in a measurement line; a sampling line for conveying process fluid from a processing space in which a substrate is processed under high pressure to the measurement line, wherein the substrate is processed under high pressure in the processing space; a control valve for opening and closing the sampling line; a fluid pressure regulator installed downstream of the control valve in the sampling line and configured to adjust the fluid passing through to a set pressure; and a pressure reducing tank installed between the sampling line and the measurement line.

[0011] In an exemplary embodiment, the device may further include: a purified gas supply line connected to the pressure reducing tank; and a purification valve installed in the purified gas supply line.

[0012] In an exemplary embodiment, the device may further include: a purified gas supply line connected to the pressure reducing tank; and a purification valve installed in the purified gas supply line.

[0013] In an exemplary embodiment, the device may further include a controller, wherein when the concentration measurement by the concentration meter is completed, the controller may supply purified gas to the pressure reducing tank by opening the purification valve.

[0014] In an exemplary embodiment, the device may further include: a discharge line connected to the pressure-reducing tank to discharge the contents of the pressure-reducing tank; and a discharge valve installed in the discharge line.

[0015] In an exemplary embodiment, the inner diameter of the discharge pipeline may be larger than the inner diameter of the measuring pipeline.

[0016] In an exemplary embodiment, the device may further include a controller, wherein the controller may open the control valve to sample the process fluid at predetermined time points during the process of treating the substrate with the process fluid in the processing space, and to measure the concentration of a first fluid contained in the process fluid.

[0017] In an exemplary embodiment, the control valve may be opened for several seconds and then closed.

[0018] In an exemplary embodiment, when the concentration of the first fluid measured by the concentration meter is equal to or less than a set value, the processing of the substrate using the process fluid can be terminated.

[0019] In an exemplary embodiment, the device may further include a controller, wherein the controller may, during the process of treating the first substrate with the process fluid in the processing space, set the control valve to an open state at a predetermined time point, and measure the concentration of the first fluid contained in the process fluid, and when the concentration of the chemical liquid measured at the predetermined time point is equal to or less than a set value, the controller sets the predetermined time point as the end time point for processing the second substrate to be processed after the first substrate.

[0020] Another exemplary embodiment of the present invention provides an apparatus for measuring concentration, the apparatus comprising: a measuring line; a concentration meter for measuring the concentration of a first fluid contained in a fluid in the measuring line; a sampling line for conveying process fluid from a processing space to the measuring line, wherein a substrate is processed in the processing space under high pressure; a control valve for opening and closing the sampling line; a fluid pressure regulator installed downstream of the control valve in the sampling line and configured to adjust the fluid passing through to a set pressure; a pressure reducing tank installed between the sampling line and the measuring line; and a controller wherein the controller opens the control valve to sample the process fluid at predetermined time points during the process of processing the substrate with the process fluid in the processing space, and measures the concentration of the first fluid contained in the process fluid.

[0021] In an exemplary embodiment, the control valve may be opened for several seconds and then closed.

[0022] In an exemplary embodiment, when the concentration of the first fluid measured by the concentration meter is equal to or less than a set value, the processing of the substrate using the process fluid can be terminated.

[0023] In an exemplary embodiment, the device may further include a controller, wherein the controller may, during the process of treating the first substrate with the process fluid in the processing space, set the control valve to an open state at a predetermined time point, and measure the concentration of the first fluid contained in the process fluid, and when the concentration of the chemical liquid measured at the predetermined time point is equal to or less than a set value, the controller sets the predetermined time point as the end time point for processing the second substrate to be processed after the first substrate.

[0024] In an exemplary embodiment, the device may further include an exhaust line for venting the atmosphere of the processing space, wherein the sampling line may be connected to the exhaust line.

[0025] In an exemplary embodiment, the concentration meter can measure the concentration while fluid is flowing in the measurement pipeline.

[0026] In an exemplary embodiment, the process fluid may be supercritical carbon dioxide, and the first fluid may be isopropanol (IPA).

[0027] Another exemplary embodiment of the present invention provides an apparatus for processing a substrate, the apparatus comprising: a vessel having a processing space for processing the substrate with a process fluid under high pressure; an exhaust line for venting the atmosphere from the processing space; a sampling line connected to the exhaust line and for opening and closing the sampling line; a control valve installed in the sampling line; a fluid pressure regulator installed downstream of the control valve in the sampling line and configured to adjust the fluid passing through to a set pressure; a pressure reducing tank connected downstream of the fluid pressure regulator; and a purified gas supply line. A chemical gas supply line is connected to the pressure-reducing tank; a purification valve is installed in the purification gas supply line; a discharge line is used to discharge fluid from the pressure-reducing tank; a discharge valve is installed on the discharge line; a measuring line is used to discharge the fluid from the pressure-reducing tank; a concentration meter is provided to the measuring line to measure the concentration of the chemical liquid contained in the fluid as the fluid flows; and a controller, wherein the controller opens the control valve for several seconds to sample the process fluid at predetermined time points during the process of treating the substrate with the process fluid in the processing space, and measures the concentration of a first fluid contained in the process fluid.

[0028] In an exemplary embodiment, when the concentration of the first fluid measured by the concentration meter is equal to or less than a set value, the processing of the substrate using the process fluid can be terminated.

[0029] In an exemplary embodiment, when the concentration of the first fluid measured at the predetermined time point is equal to or less than a set value, the predetermined time point can be set as the end time for processing the second substrate to be processed after the first substrate.

[0030] According to an exemplary embodiment of the present invention, the substrate can be processed effectively.

[0031] According to an exemplary embodiment of the present invention, the concentration of the chemical liquid can be measured even at a predetermined time point during the process at which the concentration measurement is desired.

[0032] According to an exemplary embodiment of the present invention, the concentration of chemical liquids can be monitored during the process, thereby improving process performance.

[0033] The effects of the present invention are not limited to those described above, and those skilled in the art can clearly understand the effects not mentioned from this specification and the accompanying drawings. Attached Figure Description

[0034] Figure 1 This is a schematic top plan view of a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0035] Figure 2 It is shown schematically. Figure 1 A cross-sectional view of an example of a liquid handling device.

[0036] Figure 3 It is shown schematically. Figure 1 A cross-sectional view of an example of a supercritical device.

[0037] Figure 4 This is a schematic cross-sectional view of an example 1600 of a concentration measuring device 600 applied to a supercritical apparatus.

[0038] Figure 5 This is a flowchart illustrating a concentration measurement method according to an embodiment of the present invention.

[0039] Figures 6 to 9 It is a diagram that lists the concentration measurement methods using concentration measuring equipment in sequence.

[0040] Figure 10 This is a schematic cross-sectional view of another example 2600 of a concentration measuring device 600 applied to a supercritical apparatus.

[0041] Figure 11 This is a schematic cross-sectional view of another example 3600 of a concentration measuring device 600 applied to a supercritical apparatus.

[0042] Figure 12 (a) and (b) are graphs showing the change of pressure P in the processing space 502 during the process according to each embodiment over time. Detailed Implementation

[0043] In the following description, exemplary embodiments of the invention will be described in more detail with reference to the accompanying drawings. Various modifications to the exemplary embodiments of the invention are possible, and the scope of the invention should not be construed as limited to the following exemplary embodiments. These exemplary embodiments are provided to explain the invention more fully to those skilled in the art. Therefore, the shapes of the elements in the drawings are enlarged for clearer description.

[0044] Figure 1 This is a schematic top plan view illustrating a substrate processing system according to an exemplary embodiment of the present invention. Reference Figure 1 The substrate processing system includes a transposition module 10, a processing module 20, and a controller (not shown). According to an exemplary embodiment, the transposition module 10 and the processing module 20 are arranged in one direction. Hereinafter, the direction in which the transposition module 10 and the processing module 20 are arranged is referred to as a first direction 92, and when viewed from above, a direction perpendicular to the first direction 92 is referred to as a second direction 94, and a direction perpendicular to both the first direction 92 and the second direction 94 is referred to as a third direction 96.

[0045] The transposition module 10 transfers the substrate W from the container 80 containing the substrate W to the processing module 20, and accommodates the substrate W, which has already been fully processed in the processing module 20, in the container 80. The longitudinal direction of the transposition module 10 is arranged in the second direction 94. The transposition module 10 includes a loading port 12 and a transposition frame 14. Based on the transposition frame 14, the loading port 12 is located on the side opposite to the processing module 20. The container 80 containing the substrate W is placed on the loading port 12. Multiple loading ports 12 can be provided, and the multiple loading ports 12 can be arranged in the second direction 94.

[0046] As container 80, an airtight container, such as a front-opening unified pod (FOUP), can be used. Container 80 can be placed on loading port 12 by a conveying device (not shown) (such as an overhead conveyor, overhead conveyor, or automated guided vehicle) or by an operator.

[0047] A sorting robot 120 is disposed on a sorting frame 14. A guide rail 140 with the longitudinal direction being a second direction 94 is disposed within the sorting frame 14, and the sorting robot 120 is configured to move on the guide rail 140. The sorting robot 120 includes a hand 122 on which a substrate W is placed, and the hand 122 is configured to move forward and backward, rotate about a third direction 96 as an axis, and move in the third direction 96. A plurality of hands 122 are configured to be spaced apart from each other in the vertical direction and are capable of moving forward and backward independently.

[0048] Processing module 20 includes a buffer unit 200, a conveying device 300, a liquid processing device 400, and a supercritical device 500. The buffer unit 200 provides space for the substrate W loaded onto and unloaded from the processing module 20 to temporarily reside. The liquid processing device 400 performs a liquid processing process of supplying liquid to the substrate W and processing the substrate W with the liquid. The supercritical device 500 performs a drying process of removing liquid remaining on the substrate W. The conveying device 300 conveys the substrate W between the buffer unit 200, the liquid processing device 400, and the supercritical device 500.

[0049] The longitudinal direction of the conveying device 300 can be a first direction 92. The buffer unit 200 can be disposed between the indexing module 10 and the conveying device 300. The liquid processing device 400 and the supercritical device 500 can be disposed on the transverse portion of the conveying device 300. The liquid processing device 400 and the conveying device 300 can be disposed in a second direction 94. The supercritical device 500 and the conveying device 300 can be disposed in a second direction 94. The buffer unit 200 can be positioned at one end of the conveying device 300.

[0050] According to one example, the liquid handling device 400 can be arranged on both sides of the conveying device 300, and the supercritical device 500 can be arranged on both sides of the conveying device 300, with the liquid handling device 400 positioned closer to the buffer unit 200 than the supercritical device 500. On one side of the conveying device 300, the liquid handling device 400 can be arranged in an A×B pattern (each of A and B is a natural number 1 or greater than 1) in the first direction 92 and the third direction 96. On one side of the conveying device 300, the supercritical device 500 can be arranged in a C×D pattern (each of C and D is a natural number 1 or greater than 1) in the first direction 92 and the third direction 96. Contrary to the description, only the liquid handling device 400 can be arranged on one side of the conveying device 300, and only the supercritical device 500 can be arranged on the other side of the conveying device 300.

[0051] The conveying device 300 includes a conveying robot 320. A guide rail 340 with a longitudinal direction of a first direction 92 is disposed within the conveying device 300, and the conveying robot 320 is configured to move on the guide rail 340. The conveying robot 320 includes a hand 322 on which a substrate W is placed, and the hand 322 is configured to move forward and backward, rotate about a third direction 96 as an axis, and move in the third direction 96. A plurality of hands 322 are configured to be vertically spaced apart from each other, and the hands 322 can move forward and backward independently of each other.

[0052] The buffer unit 200 includes a plurality of buffers 220 on which the substrate W is placed. The buffers 220 may be configured to be spaced apart from each other in a third direction 96. The front and rear of the buffer unit 200 are open. The front is the side facing the indexing module 10, and the rear is the side facing the conveying device 300. The indexing robot 120 can access the buffer unit 200 through the front, and the transfer robot 320 can access the buffer unit 200 through the rear.

[0053] Figure 2 This is a schematic illustration of an exemplary embodiment of the present invention. Figure 1 A diagram of the liquid handling unit 400. (Reference) Figure 2 The liquid handling device 400 includes a housing 410, a cup 420, a support unit 440, a liquid supply unit 460, a lifting unit 480, and a control unit 40. The control unit 40 controls the operation of the liquid supply unit 460, the support unit 440, and the lifting unit 480. The housing 410 is configured as a generally rectangular parallelepiped shape. The cup 420, the support unit 440, and the liquid supply unit 460 are disposed within the housing 410.

[0054] The cup 420 has a processing space with an open top, within which a substrate W is processed with liquid. A support unit 440 supports the substrate W within the processing space. A liquid supply unit 460 supplies liquid to the substrate W supported by the support unit 440. Various types of liquid can be used, and they can be supplied to the substrate W sequentially. A lifting unit 480 adjusts the relative height between the cup 420 and the support unit 440.

[0055] According to one example, cup 420 includes a plurality of recycling containers 422, 424, and 426. Each of the recycling containers 422, 424, and 426 has a recycling space for recycling liquid used to process the substrate. Each of the recycling containers 422, 424, and 426 is configured in an annular shape surrounding support unit 440. Pre-treated liquid spilled due to rotation of the substrate W during the liquid processing is introduced into the recycling space through inlets 422a, 424a, and 426a of recycling containers 422, 424, and 426, respectively. According to one example, cup 420 includes a first recycling container 422, a second recycling container 424, and a third recycling container 426. The first recycling container 422 is configured to surround support unit 440, the second recycling container 424 is configured to surround the first recycling container 422, and the third recycling container 426 is configured to surround the second recycling container 424. The second inlet 424a, which introduces liquid into the second recycling container 424, may be located above the first inlet 422a, which introduces liquid into the first recycling container 422, and the third inlet 426a, which introduces liquid into the third recycling container 426, may be located above the second inlet 424a.

[0056] The support unit 440 includes a support plate 442 and a drive shaft 444. The upper surface of the support plate 442 may be generally circular and may have a diameter larger than that of the substrate W. A support pin 442a supporting the rear surface of the substrate W is disposed at the center of the support plate 442, and the upper end of the support pin 442a is configured to protrude from the support plate 442, such that the substrate W is spaced apart from the support plate 442 by a predetermined distance. A chuck pin 442b is disposed at the edge of the support plate 442.

[0057] The chuck pin 442b is configured to protrude upward from the support plate 442 and support the lateral portion of the substrate W, such that the substrate W will not separate from the support unit 440 when the substrate W rotates. The drive shaft 444 is driven by the drive member 446 and is connected to the center of the bottom surface of the substrate W, causing the support plate 442 to rotate based on the central axis of the support plate 442.

[0058] According to one example, the liquid supply unit 460 includes a first nozzle 462, a second nozzle 464, and a third nozzle 446. The first nozzle 462 supplies a first liquid to a substrate W. The first liquid may be a liquid that removes film or foreign matter remaining on the substrate W. The second nozzle 464 supplies a second liquid to the substrate W. The second liquid may be a liquid that dissolves well in a third liquid. For example, the second liquid may be a liquid that dissolves better in a third liquid than in a first liquid. The second liquid may be a liquid that neutralizes the first liquid supplied to the substrate W. Furthermore, the second liquid may be a liquid that neutralizes the first solution and simultaneously dissolves better in a third solution than in the first solution.

[0059] According to one example, the second liquid can be water. A third nozzle 466 supplies a third liquid to the substrate W. The third liquid can be a liquid that dissolves well in a supercritical fluid used in the supercritical device 500. For example, the third liquid can be a liquid that dissolves better in the supercritical fluid used in the supercritical device 500 than in the second liquid. According to an example, the third liquid can be an organic solvent. The organic solvent can be isopropanol (IPA). For example, the supercritical fluid can be carbon dioxide.

[0060] The first nozzle 462, the second nozzle 464, and the third nozzle 466 can be supported by different arms 461, and the arms 461 can move independently. Optionally, the first nozzle 462, the second nozzle 464, and the third nozzle 466 can be mounted on the same arm and move simultaneously.

[0061] The lifting unit 480 moves the cup 420 vertically. This vertical movement of the cup 420 changes the relative height between the cup 420 and the substrate W. Consequently, the recovery containers 422, 424, and 426 for recovering the pretreated liquid are changed according to the type of liquid supplied to the substrate W, allowing for the separation and recovery of the liquid. Contrary to this description, the cup 420 can be fixedly mounted, and the lifting unit 480 can move the support unit 440 vertically.

[0062] Figure 3 It is shown schematically. Figure 1 A figure shows an exemplary embodiment of the supercritical device 500. According to the exemplary embodiment, the supercritical device 500 utilizes a supercritical fluid to remove liquid from a substrate W. According to the exemplary embodiment, the liquid on the substrate W may be IPA. The supercritical device 500 removes IPA from the substrate W by supplying supercritical fluid to the substrate and dissolving the IPA on the substrate W in the supercritical fluid.

[0063] refer to Figure 3 The supercritical device 500 includes a vessel 520, a liquid supply line 540, a support member 580, a drive member 590, and an exhaust unit 550.

[0064] The vessel 520 provides a processing space 502 in which a supercritical process is performed. In one example, the vessel 520 may be cylindrical. Alternatively, the vessel 520 may be cubic. The vessel 520 includes a first body 522 and a second body 524. The first body 522 and the second body 524 are combined with each other to provide the aforementioned processing space 502. In one example, the first body 522 is circular when viewed from above. Similarly, the second body 524 is circular when viewed from above. In one example, the first body 522 is positioned on top of the second body 524. Optionally, the first body 522 and the second body 524 may be positioned at the same height, and the first body 522 and the second body 524 may open and close to the left and right.

[0065] When the first body 522 and the second body 524 are spaced apart, the processing space 502 is opened, and at this time, the substrate W is loaded or unloaded. The drive member 590 raises and lowers either the first body 522 or the second body 524, causing the vessel 520 to move to the open or closed position.

[0066] In one example, the drive member 590 can be configured to drive the cylinder of the first body 522 or the second body 524 to rise and fall. For example, the drive member 590 can be configured to raise and lower the second body 524. Here, the open position is a position where the first body 522 and the second body 524 are spaced apart from each other, and the closed position is a position where the contact surfaces of the first body 522 and the second body 524 facing each other are in close contact with each other. That is, in the open position, the processing space 502 is opened from the outside, and in the closed position, the processing space 502 is closed to the outside.

[0067] In one example, a first discharge port 525 connected to a first supply line 542 may be formed in the first body 522. Fluid can be supplied to the processing space 502 through the first discharge port 525. In one example, a second discharge port 526 connected to a second supply line 562 and an exhaust port 527 connected to an exhaust line 552 may be formed in the second body 524. Optionally, only one of the first discharge port 525 and the second discharge port 526 may be provided in the vessel 520.

[0068] In one example, heater 570 is disposed inside the wall of vessel 520. Heater 570 heats the processing space 502 of vessel 520, such that the fluid supplied to the interior space of vessel 520 is maintained in a supercritical state. A supercritical fluid atmosphere is formed inside processing space 502.

[0069] The support member 580 supports the substrate W within the processing space 502 of the vessel 520. The substrate W, loaded into the processing space 502 of the vessel 520, is placed on the support member 580. According to an example, the substrate W is supported by the support member 580 such that the patterned surface faces upward. In one example, the support member 580 supports the substrate W above the second discharge hole 526. In one example, the support member 580 may be coupled to a first body 522. Optionally, the support member 580 may be coupled to a second body 524.

[0070] Additionally, an exhaust unit 550 is connected to the second body 524. The exhaust unit 550 discharges the atmosphere from the processing space 502. The supercritical fluid in the processing space 502 is discharged to the outside of the vessel 520 through the exhaust unit 550. The exhaust unit 550 includes exhaust lines 552 and 553 and an exhaust valve 5522. The exhaust valve 5522 is installed in the exhaust lines 552 and 553 to control whether the processing space 502 is vented and to control the exhaust flow rate.

[0071] Figure 4 This is a schematic cross-sectional view of an example 1600 of a concentration measuring device 600 applied to a supercritical apparatus. (Refer to...) Figure 4 Provide a description.

[0072] In one example, a sampling line 671 is provided connected to the exhaust line 522. The sampling line 671 can be connected upstream of the exhaust valve 5522. Fluid in the processing space 502 can be transferred to the sampling line 671. Alternatively, the sampling line 671 can also be directly connected to the processing space 502. That is, the sampling line 671 can be directly connected to the vessel 520 without passing through the exhaust line 552.

[0073] In one example, control valve 6711 is installed in sampling line 671. Control valve 6711 disconnects and connects the fluid flow to sampling line 671.

[0074] In one example, a fluid pressure regulator 674 is installed downstream of a control valve 6711 in a sampling line 671. In another example, the fluid pressure regulator 674 may be configured as a fluid regulator. The fluid pressure regulator 674 causes the fluid passing through it to be regulated to a set pressure. For example, when the pressure of the fluid on the primary side (inlet side) of the fluid pressure regulator 674 is a first pressure, the pressure of the fluid on the secondary side (outlet side) will be regulated to a second pressure. In embodiments of the invention, the second pressure is a pressure lower than the first pressure. It is difficult to measure the concentration of high-pressure fluids. The fluid pressure regulator 674 controls the pressure of the fluid so that the concentration meter 678, described later, can measure the concentration of chemical liquids contained in the process fluid.

[0075] Concentration meter 678 measures the concentration of a chemical liquid contained in a process fluid. Concentration meter 678 measures the concentration of a chemical liquid contained in a fluid flowing through a pipe 672 located downstream of a fluid pressure regulator 674. In one example, the chemical liquid to be measured is IPA, and the process fluid is supercritical carbon dioxide.

[0076] A pressure-reducing tank 675 may be further disposed between the concentration meter 678 and the fluid pressure regulator 674. A predetermined volume is formed within the pressure-reducing tank 675. The pressure-reducing tank 675 performs secondary pressure reduction on the fluid whose pressure has already been reduced by the fluid pressure regulator 674.

[0077] Measuring line 672 discharges gas from inside pressure reducing tank 675. Discharge valve 6721 is installed in measuring line 672. Concentration meter 678 can be installed upstream of the first discharge valve 6721. Concentration meter 678 measures concentration when the first discharge valve 6721 is open and process fluid is flowing.

[0078] Discharge line 676 discharges gas from inside pressure reducing tank 675. Discharge line 676 is connected to pressure reducing tank 675. A second discharge valve 6761 is installed in discharge line 676. The diameter of discharge line 676 may be larger than the diameter of measuring line 672. Discharge line 676 is used to discharge process fluid remaining in pressure reducing tank 675 after concentration measurement. When purge gas, which will be described later, is introduced, the process fluid remaining in pressure reducing tank 675 can be rapidly discharged through discharge line 676.

[0079] A purified gas supply line 673 is connected to a pressure reducing tank 675. A purification valve 6731 is installed in the purified gas supply line 673. Purified gas can be introduced into the pressure reducing tank 675 through the purified gas supply line 673. After the concentration of the purified gas is measured, the fluid remaining in the pressure reducing tank 675 is purified and removed through the pressure reducing tank 675. The purified gas can be provided as an inert gas. The purified gas can be nitrogen.

[0080] Figure 5 This is a flowchart illustrating a concentration measurement method according to an embodiment of the present invention. Figures 6 to 9 This is a diagram listing the concentration measurement methods using concentration measuring equipment in sequence. (Refer to...) Figure 5 and Figures 6 to 9 This describes a method for measuring the concentration of chemical liquids.

[0081] A controller (not shown) controls the supercritical device 500 and the concentration measuring device 600. The controller 30 can control the components of the supercritical device 500 and the concentration measuring device 600, enabling the substrate to be processed according to the set process. The controller (not shown) may include a process controller formed by a microprocessor (computer) that executes control of the substrate processing system, a user interface formed by a keyboard for operator-managed command input operations, a display for visualizing and displaying the operating status of the substrate processing equipment, and a storage unit for storing control programs for executing processes in the substrate processing system under the control of the process controller, or for storing programs (i.e., processing schemes) for executing processes in each component according to various data and processing conditions.

[0082] Reference Figure 5 and Figure 6 A description is provided. Control valve 6711 (S10) is briefly opened at a predetermined time point during the process. This brief period can be several seconds. (Refer to...) Figure 12 Describe the scheduled time points during the process. Figure 12 (a) and (b) are graphs showing the change of pressure P in the processing space 502 during the process according to each embodiment. Reference Figure 12In (a), when the internal pressure of the processing space 502 reaches the set pressure of the processed liquid, the internal pressure of the processing space 502 is maintained while supplying and venting are performed. In this case, any point in time (such as a1, b1, and c1) during the maintenance of the internal pressure can be a predetermined point in time. (See reference) Figure 12 (b) When the internal pressure of the processing space 502 reaches the set pressure of the processing liquid, a cycle is executed to change the internal pressure by performing supply and venting. In this case, any point in time during the venting operation of the internal pressure (such as a2, b2, and c2) can be a predetermined point in time. In addition to those mentioned above, predetermined points can also be selected if necessary.

[0083] Reference Figure 5 , Figure 7 and Figure 8 The following description is provided. Control valve 6711 is closed (S20). Fluid that accumulates during the brief opening of control valve 6711 passes through fluid pressure regulator 674 and is initially depressurized (S31). Fluid passing through fluid pressure regulator 674 enters pressure reducing tank 675 and is subsequently depressurized (S33). Secondary depressurization is possible because the interior of pressure reducing tank 675 provides a larger volume than pipe 671. The fluid is depressurized to a pressure at which concentration measuring device 687 can measure the concentration. The first discharge valve 6721 of measuring line 672 is set to the open state (S32). During operations S31 to S33, concentration meter 678 measures the concentration of the chemical liquid in the fluid flowing through measuring line 672 (S30). When the measurement is complete, it is preferable to close the first discharge valve 6721 to prevent fluid backflow.

[0084] Reference Figure 5 and Figure 9 The following description is provided. Upon completion of the concentration measurement, the second discharge valve 6761 is opened, and the pressure-reducing tank 675 is vented through the discharge line 676 (S40). The interior of the pressure-reducing tank 675 is then purified (S50). Purified gas is introduced into the pressure-reducing tank 675 through the purified gas supply line 673 and discharged through the discharge line 676. The purified gas removes any residual fluids and chemical liquids from the pressure-reducing tank 675.

[0085] When using the above concentration measurement method, the concentration of the chemical liquid in the treatment liquid can be measured at the corresponding time point by opening the control valve 6711 at the desired time point to measure the concentration during the process or even under high pressure conditions. This allows the concentration of the internal chemical liquid to be monitored according to changes in the process progress, thereby potentially improving process performance.

[0086] In one example, the processing of the substrate W in the supercritical device 500 can be terminated when the concentration of the chemical liquid (e.g., IPA) measured by the concentration meter 678 at a predetermined time point is equal to or less than a set value. (Reference) Figure 12 When the concentration of the chemical liquid measured at time point b1 is equal to or less than the set value, the processing of substrate W can be terminated even if there is still a preset process time.

[0087] In another example, control can be achieved by sampling the process fluid at a predetermined time point during the process of processing the first substrate with the process fluid in the processing space 502, measuring the concentration of the chemical liquid contained in the sampled process fluid, and selecting the selected predetermined time point as the end time point for processing the second substrate to be processed after the first substrate when the concentration of the chemical liquid measured at the selected predetermined time point is equal to or less than a set value.

[0088] Figure 10 This is a schematic cross-sectional view of another example 2600 of a concentration measuring device 600 applied to a supercritical apparatus. (See reference...) Figure 10 When describing another example 2600 of the concentration measuring device 600, using Figure 4 The description of the concentration measuring device 1600 replaces the description of the concentration measuring device 1600. Figure 4 The concentration measuring device 1600 has the same configuration as described. In the concentration measuring device 2600, the measuring line 672 can be used as a discharge line. Therefore, unlike... Figure 4 The concentration measuring device 1600 can remove the discharge line 676. In this case, the configuration of the device can be reduced. However, since ventilation is performed through the measuring line 672, there may be problems such as potential contamination of the measuring line 672 during discharge, and the inability to obtain a rapid discharge rate.

[0089] Figure 11 This is a schematic cross-sectional view of another example 3600 of a concentration measuring device 600 applied to a supercritical apparatus. (See reference...) Figure 11 When describing another example 3600 of the concentration measuring device 600, using Figure 4 The description of the concentration measuring device 1600 replaces the description of the concentration measuring device 1600. Figure 4 The concentration measuring device 1600 has the same configuration as described. Unlike... Figure 4In the concentration measuring device 1600, the pressure reducing tank 675 can be removed. That is, the concentration of the chemical liquid contained in the process fluid flowing through the measuring line 672 can be measured after a first pressure reduction without performing a second pressure reduction. However, when the pressure reducing tank 675 is removed, only the process fluid to which the first pressure reduction has been performed flows through the measuring line 672. In this case, since the end of the measuring line 672 is a discharge port, the risk increases, and accurate measurement may be difficult because the pressure is not sufficiently reduced.

[0090] The foregoing detailed description illustrates the present invention. Furthermore, while exemplary embodiments of the invention have been shown and described above, the invention can be used in various other combinations, modifications, and environments. That is, modifications or alterations can be made to the foregoing within the scope of the inventive concept disclosed herein, its equivalents, and / or within the scope of skill or knowledge in the art. The foregoing exemplary embodiments describe the optimal state for realizing the technical spirit of the invention, and various variations are possible for specific fields of application and uses of the invention. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed exemplary embodiments. Additionally, the appended claims should be construed as including other exemplary embodiments as well.

Claims

1. A device for measuring concentration, the device comprising: Measurement pipeline; A concentration meter for measuring the concentration of a first fluid contained in the process fluid in the measurement pipeline; A sampling pipeline for conveying the process fluid from the processing space to the measurement pipeline, wherein the substrate is processed under high pressure in the processing space; A control valve, used to open and close the sampling line; A fluid pressure regulator, which is installed downstream of the control valve in the sampling line and configured to adjust the process fluid passing through to a set pressure; as well as A pressure-reducing tank is installed between the sampling pipeline and the measuring pipeline; as well as Controller The controller opens the control valve to sample the process fluid at predetermined time points during the process of treating the substrate with the process fluid in the processing space, and measures the concentration of the first fluid contained in the process fluid. When the concentration of the first fluid measured by the concentration meter is equal to or less than a set value, the process of using the process fluid to process the substrate is terminated.

2. The device according to claim 1, further comprising: A purified gas supply line, the purified gas supply line being connected to the pressure reducing tank; and A purification valve is installed in the purified gas supply line.

3. The device according to claim 2, further comprising: Controller When the concentration measurement by the concentration meter is completed, the controller supplies purified gas to the pressure reducing tank by opening the purification valve.

4. The device according to claim 2, further comprising: A discharge line is connected to the pressure-reducing tank to allow the contents of the pressure-reducing tank to be discharged. as well as A discharge valve is installed in the discharge pipeline.

5. The device according to claim 4, wherein the inner diameter of the discharge pipeline is larger than the inner diameter of the measuring pipeline.

6. The device according to claim 1, wherein the control valve opens for several seconds and then closes.

7. The device according to claim 1, further comprising: Controller During the process of treating the first substrate with the process fluid in the processing space, the controller sets the control valve to an open state at predetermined time points and measures the concentration of the first fluid contained in the process fluid. When the concentration of the first fluid measured at the predetermined time point is equal to or less than a set value, the controller sets the predetermined time point as the end time point for processing the second substrate to be processed after the first substrate.

8. The device according to any one of claims 1 to 7, further comprising: An exhaust pipe, used to exhaust air from the processing space. The sampling line is connected to the exhaust line.

9. The apparatus according to any one of claims 1 to 7, wherein the concentration meter measures the concentration while the fluid is flowing in the measuring line.

10. The apparatus according to any one of claims 1 to 7, wherein the process fluid is supercritical carbon dioxide, and The first fluid is isopropanol (IPA).

11. An apparatus for measuring concentration, the apparatus comprising: Measurement pipeline; A concentration meter for measuring the concentration of a first fluid contained in the process fluid in the measurement pipeline; A sampling pipeline for conveying the process fluid from the processing space to the measurement pipeline, wherein the substrate is processed under high pressure in the processing space; A control valve, used to open and close the sampling line; A fluid pressure regulator, which is installed downstream of the control valve in the sampling line and configured to adjust the process fluid passing through to a set pressure; A pressure-reducing tank is installed between the sampling pipeline and the measuring pipeline; as well as Controller The controller opens the control valve to sample the process fluid at predetermined time points during the process of treating the substrate with the process fluid in the processing space, and Measure the concentration of the first fluid contained in the process fluid. When the concentration of the first fluid measured by the concentration meter is equal to or less than a set value, the process of using the process fluid to process the substrate is terminated.

12. The device of claim 11, wherein the control valve opens for several seconds and then closes.

13. The device according to claim 11, further comprising: Controller During the process of treating the first substrate with the process fluid in the processing space, the controller sets the control valve to an open state at predetermined time points and measures the concentration of the first fluid contained in the process fluid. When the concentration of the first fluid measured at the predetermined time point is equal to or less than a set value, the controller sets the predetermined time point as the end time point for processing the second substrate to be processed after the first substrate.

14. The device according to any one of claims 11 to 13, further comprising: An exhaust pipe, used to exhaust air from the processing space. The sampling line is connected to the exhaust line.

15. The apparatus according to any one of claims 11 to 13, wherein the concentration meter measures the concentration while the process fluid is flowing in the measuring line.

16. The apparatus according to any one of claims 11 to 13, wherein the process fluid is supercritical carbon dioxide, and The first fluid is isopropanol (IPA).

17. An apparatus for processing a substrate, the apparatus comprising: A vessel having a processing space for processing a substrate with process fluids under high pressure; An exhaust line for venting the atmosphere from the processing space; A sampling line, which is connected to the exhaust line; A control valve, which is installed in the sampling line and is used to open and close the sampling line; A fluid pressure regulator, which is installed downstream of the control valve in the sampling line and configured to adjust the process fluid passing through to a set pressure; A pressure-reducing tank, connected downstream of the fluid pressure regulator; A purified gas supply pipeline is connected to the pressure reducing tank; A purification valve, wherein the purification valve is installed in the purified gas supply pipeline; A discharge line for discharging the process fluid from the pressure reducing tank; A discharge valve, wherein the discharge valve is installed on the discharge pipeline; A measuring line for discharging the process fluid from the pressure reducing tank; A concentration meter is provided to the measuring line to measure the concentration of a first fluid contained in the process fluid as the process fluid flows; as well as Controller The controller opens the control valve for several seconds to sample the process fluid at predetermined time points during the process of treating the substrate with the process fluid in the processing space, and measures the concentration of a first fluid contained in the process fluid. When the concentration of the first fluid measured by the concentration meter is equal to or less than a set value, the process of using the process fluid to process the substrate is terminated.

18. The apparatus of claim 17, wherein when the concentration of the first fluid measured at the predetermined time point is equal to or less than a set value, the predetermined time point is set as the end time for processing the second substrate to be processed after the first substrate.

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