一种增强MXenes饱和吸收信号的方法
By growing MoS2 in situ on MXenes to form a heterojunction, the problem of insufficient saturated absorption signal of MXenes was solved, and its nonlinear optical performance was significantly enhanced.
CN115981066BActive Publication Date: 2026-07-17CENT SOUTH UNIV
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CENT SOUTH UNIV
- Filing Date
- 2022-09-09
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In the present technology, nonlinear optical research on MXenes mainly focuses on reporting the performance or inherent characteristics of specific MXenes, and lacks effective strategies to enhance their saturable absorption signals.
Method used
By in-situ growing MoS2 on two-dimensional layered MXenes material to form a heterojunction, the structure of the MXenes/MoS2 heterojunction was optimized, and an appropriate excitation wavelength was selected to enhance its saturation absorption signal.
Benefits of technology
At a specific wavelength, the saturation absorption signal of the MXenes/MoS2 heterojunction is about twice that of the MXenes material, which significantly improves the nonlinear optical performance.
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Abstract
本发明属于光学非线性材料领域，具体涉及一种增强MXenes饱和吸收信号的方法。所述方法至少包含以下步骤：步骤一在MXenes层状材料上原位生长MoS2形成异质结；步骤二测量MXenes / MoS2异质结的饱和吸收信号，即在不同激发光波长下测量MXenes / MoS2异质结的饱和吸收信号；根据饱和吸收信号的强弱，选出最适合的激发光波长。当MXenes为碳化铌时，在激发光波长为1300nm和1550nm时所述MXenes / MoS2异质结的饱和吸收信号大于所述二维层状MXenes材料的饱和吸收信号，且MXenes / MoS2异质结饱和吸收信号相比于MXenes材料增强了2倍左右。
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