一种半导体激光器的制作方法
By using InGaAlAs etching stop layer material and ICP etching technology during the etching process, the problem of difficult trench depth control was solved, and the performance stability and consistency of semiconductor lasers were improved.
CN115986566BActive Publication Date: 2026-07-17HENAN CHENGMING PHOTOELECTRIC NEW MATERIAL CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HENAN CHENGMING PHOTOELECTRIC NEW MATERIAL CO LTD
- Filing Date
- 2023-01-10
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In existing technologies, the etching depth of periodic trenches is difficult to control precisely, leading to unstable performance of single-wavelength semiconductor lasers.
Method used
Using InGaAlAs etching stop layer material, the etching process automatically stops on this material. Combined with ICP etching technology, the trench depth is precisely controlled, avoiding any impact on the shape of the laser ridge waveguide.
Benefits of technology
This enables precise control of the trench depth, improving the performance stability, uniformity, and consistency of the laser.
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Figure CN115986566B_ABST
Abstract
本发明涉及一种半导体激光器的制作方法，包括在InP衬底上依次生长InGaAlAs量子阱有源材料、InP间隔材料、InGaAlAs刻蚀停止层材料和InP包层材料，在InP包层材料上覆上SiO2脊波导条形掩膜，去除SiO2脊波导条形掩膜两侧的InP间隔材料、InGaAlAs刻蚀停止层材料和InP包层材料以制作出激光器脊型波导，在SiO2脊波导条形掩膜上标记出沟槽并去除该处的SiO2脊波导条形掩膜以制作出呈间隔分布的沟槽掩膜，去除相邻两沟槽掩膜之间的InP包层材料以制作出沟槽。本发明可在制作激光器脊型波导时使刻蚀自动停止在InGaAlAs量子阱有源材料上，在制作沟槽时使刻蚀自动停止在InGaAlAs刻蚀停止层材料上，从而能够对沟槽的深度进行精确控制且不会对激光器脊型波导的形状产生影响，提高激光器性能的稳定均匀性。
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