Semiconductor engineering exhaust gas treatment device

Abstract

A semiconductor engineering exhaust gas treatment device that treats exhaust gas generated from a semiconductor engineering and moved to a vacuum pump is provided. The semiconductor engineering exhaust gas treatment device includes a plasma generation section that generates plasma; a reaction chamber that decomposes a perfluorinated compound by the plasma to generate a decomposed gas; and a gas supply section that supplies the decomposed gas from the reaction chamber to a treatment chamber into which the exhaust gas from the semiconductor engineering flows and from which treated exhaust gas is discharged to the vacuum pump, the decomposed gas reacting with the exhaust gas in the treatment chamber to inhibit a component passing through the exhaust gas from generating a salt in a solid state.

Description

Technical Field

[0001] This invention relates to a semiconductor engineering waste gas treatment device, and more specifically to a semiconductor engineering waste gas treatment device that suppresses the formation of solid phase salts before they are discharged by a vacuum pump. Background Technology

[0002] As industries such as semiconductors and LCDs become larger and production increases, the types of gases used in these processes are also increasing. Semiconductor manufacturing processes involve many steps, and the types of gases used are as diverse as the many steps themselves.

[0003] For example, in semiconductor device manufacturing processes, wafers supplied to processing chambers undergo repeated photolithography, etching, diffusion, and metal deposition processes. Various engineering gases are used during these processes, and after completion, the waste gases are discharged from the processing chamber via vacuum pumps. These waste gases may contain toxic components, and therefore are purified using semiconductor engineering waste gas treatment devices such as scrubbers.

[0004] However, the generation of powder from the exhaust gases during such semiconductor engineering becomes a problem due to varying temperature and pressure conditions. For example, in the case of TiN engineering, where titanium chloride (TiCl4) gas and ammonia (NH3) gas are reacted to deposit titanium nitride (TiN) on a wafer using chemical vapor deposition (CVD), residual TiN powder and ammonium chloride (NH4Cl) powder that are not deposited on the wafer during the TiN process become deposited in the exhaust pipe and vacuum pump, causing problems.

[0005] Figure 1 This is a schematic diagram illustrating an example of salt powder generated from waste gas in semiconductor engineering.

[0006] Ammonium chloride (NH4Cl) powder is generated by the reaction of ammonia (NH3) gas and hydrogen chloride (HCl) gas contained in the exhaust gas discharged from the engineering chamber during TiN engineering. In the foreline at a pressure of approximately 1–2 Torr, ammonium chloride exists in the gaseous phase at 160–170 °C. However, it becomes a solid phase below 340 °C at 760 Torr.

[0007] To address the issue of ammonium chloride (NH4Cl) causing powder deposits inside exhaust pipes, a previous technique employed was to heat the exhaust pipe to a specific temperature using a heating device such as a heating sleeve to prevent hydrogen chloride (HCl) gas and ammonia (NH3) gas from reacting to form solid ammonium chloride (NH4Cl). The solid ammonium chloride (NH4Cl) then passed through the exhaust pipe as decomposed hydrogen chloride (HCl) gas and ammonia (NH3) gas.

[0008] However, this existing technology cannot serve as a fundamental solution to the powder deposition problem because hydrogen chloride (HCl) gas and ammonia (NH3) gas can easily react to regenerate ammonium chloride (NH4Cl) powder.

[0009] As mentioned above, byproducts (e.g., NH4Cl) generated during processes using TiCl, NH3, or WF6, particularly the large amounts of ammonium chloride formed in ALD TiN processes, result in solid-phase salts and cause the aforementioned problems. Consequently, increased vacuum pump failures and downtime losses lead to frequent production and equipment operation issues. Furthermore, frequent maintenance and cleaning costs increase, among other problems. Therefore, strategies for stable and economical operation of vacuum pumps are needed. Summary of the Invention

[0010] Technical issues

[0011] The technical objective of this invention is to provide a semiconductor engineering waste gas treatment device located at the front end of a vacuum pump, which reduces the generation of NH4Cl salt powder by decomposing NF3 gas (generating F free radicals), thus ensuring the electrode life of the plasma compared to existing technologies.

[0012] However, the technical objectives to be achieved by this invention are not limited to those described above. Those skilled in the art to which this invention pertains can clearly understand other technical objectives not mentioned in the following description.

[0013] Technical solution

[0014] To achieve the aforementioned technical objective, one embodiment of the present invention provides a semiconductor engineering waste gas treatment apparatus for treating waste gas generated from semiconductor engineering and moving toward a vacuum pump. The semiconductor engineering waste gas treatment apparatus includes: a plasma generation unit that generates plasma; a reaction chamber that decomposes perfluorinated compounds through the plasma to generate decomposition gas; and a gas supply unit that supplies the decomposition gas from the reaction chamber to the waste gas inflow from the semiconductor engineering process and discharges the treated waste gas to the treatment chamber of the vacuum pump, wherein the decomposition gas can react with the waste gas in the treatment chamber to suppress the formation of solid-state salts from components of the waste gas.

[0015] In one embodiment of the present invention, the plasma generation unit generates N2 plasma via an electric arc plasma, and NF3, which is the perfluorinated compound supplied to the reaction chamber, is decomposed by the N2 plasma to generate N2, NF3, or F. -The decomposition gas supplied to the processing chamber reacts with the NH3 in the waste gas or the generated NH4Cl to generate gaseous NH4F, thereby suppressing the generation of solid NH4Cl.

[0016] In one embodiment of the present invention, the gas supply unit may include: a connecting pipe for moving decomposition gas from the reaction chamber; and a gas injection unit disposed between the connecting pipe and the processing chamber for injecting the decomposition gas into the processing chamber.

[0017] In one embodiment of the present invention, the gas injection section may include: an outer tube section, one end of which is connected to the connecting tube; and a pressure differential centering section, which extends to the other end of the outer tube section and is disposed inside the outer tube at a distance from the inner side surface of the outer tube section, thereby injecting the decomposed gas into the processing chamber through the pressure difference between the connecting tube and the processing chamber.

[0018] In one embodiment of the present invention, the uniformity of the decomposed gas can be improved and flow into the pressure differential centering section by the eddy current generated by the space between the differential centering section and the inner side of the outer tube.

[0019] In one embodiment of the invention, the NF3 gas may be supplied to the reaction chamber instead of between the positive and negative electrodes that generate the arc plasma in order to improve the lifetime of the positive and negative electrodes.

[0020] In one embodiment of the invention, ammonium chloride is formed from the waste gas via the following reaction formula 1.

[0021] [Reaction Formula 1]

[0022] 6TiCl4+20NH3→6TiN+N2+12HCl+12NH4Cl

[0023] The formation of solid-phase ammonium chloride salt is suppressed within the processing chamber by the following reactions 2 and 3.

[0024] [Reaction 2]

[0025] TiCl4+4NH3+3F→TiN+3NH4F+2Cl2

[0026] [Reaction 3]

[0027] 8NH4Cl + 6F → 6NH4F + 8HCl + N2.

[0028] In one embodiment of the present invention, a control unit may be included to adjust the composition and supply of the decomposition gas by adjusting the supply of the N2 plasma and the supply of the NF3.

[0029] Technical effect

[0030] According to embodiments of the present invention, the formation of ammonium chloride is suppressed by decomposing the gas, thereby improving productivity by reducing vacuum pump failures and downtime losses. Furthermore, the PM cycle can be extended.

[0031] Furthermore, the structure of the outer pipe section and the differential pressure centering section of the gas supply unit allows for a more uniform supply of the components of the decomposed gas.

[0032] Furthermore, the semiconductor engineering waste gas treatment device according to this application can overcome the capacity limitations of existing MicroWave, ICP, and RF methods. That is, existing technologies suffer from increased capacity, energy consumption, and operating costs due to the recent increase in gas usage in nanoengineering. However, the semiconductor engineering waste gas treatment device according to this application can easily handle increased engineering gas usage by readily adjusting the supply of decomposition gases.

[0033] Furthermore, instead of directly injecting NF3 onto the electrodes of the plasma generation unit, NF3 is supplied to the reaction chamber, and the N2 plasma decomposes the NF3 to generate decomposition gas. This solves the problem of shortened electrode life in the plasma generation unit and extends its lifespan. Of course, highly corrosion-resistant materials can be used in the reaction chamber and other reaction components.

[0034] The effects of the present invention are not limited to those described above, and should be understood to include all effects that can be deduced from the composition of the invention as described in the detailed description of the invention or the claims. Attached Figure Description

[0035] Figure 1 This is a schematic diagram illustrating an example of salt powder generated from waste gas in semiconductor engineering;

[0036] Figure 2 This is a schematic diagram illustrating a semiconductor engineering waste gas treatment apparatus according to an embodiment of the present invention;

[0037] Figure 3 This is a schematic diagram illustrating the process by which a semiconductor engineering waste gas treatment apparatus functions between a semiconductor device and a vacuum pump, according to an embodiment of the present invention.

[0038] Figure 4 This is a schematic diagram illustrating the manner in which a semiconductor engineering waste gas treatment device is connected to a semiconductor engineering waste gas and vacuum pump according to an embodiment of the present invention.

[0039] Figure 5This is a schematic diagram illustrating an example of the plasma generation section and reaction chamber of a semiconductor engineering waste gas treatment apparatus;

[0040] Figure 6 This is a schematic diagram illustrating the supply of NF3 to the reaction chamber;

[0041] Figure 7 This is a schematic diagram illustrating the connection part of the semiconductor engineering waste gas treatment device;

[0042] Figure 8 This is a schematic diagram illustrating the gas injection section of the gas supply unit in a semiconductor engineering waste gas treatment device.

[0043] Figure 9 This is a schematic diagram illustrating the process of reducing salt powder in a semiconductor engineering waste gas treatment device according to an embodiment of the present invention;

[0044] Figure 10 and Figure 11 This is a schematic diagram illustrating the NF3 decomposition efficiency test results of a semiconductor engineering waste gas treatment device according to an embodiment of the present invention;

[0045] Figure 12 and Figure 13 This is a schematic diagram illustrating the performance test results of a semiconductor engineering waste gas treatment device according to an embodiment of the present invention;

[0046] Figure 14 This is a schematic diagram illustrating the performance and effects of a semiconductor engineering waste gas treatment device according to an embodiment of the present invention. Detailed Implementation

[0047] This invention can be modified in many ways and can take many forms. Specific embodiments are illustrated in the accompanying drawings and described in detail in the specification. However, it should be understood that this invention is not intended to limit it to the specific disclosed manner, but rather to include all modifications, equivalents, and substitutions encompassing the spirit and technical scope of this invention. Similar reference numerals are used to label similar components in the accompanying drawings.

[0048] Unless otherwise defined, all terms used herein, including technical or scientific terms, shall have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. Terms defined in commonly used dictionaries shall be interpreted as having the meaning consistent with their meaning in the context, and shall not be construed as having an ideal or overly formal meaning unless expressly defined in this application.

[0049] The preferred embodiments of the present invention will be described in more detail below with reference to the accompanying drawings.

[0050] This invention relates to a semiconductor engineering waste gas treatment device for treating waste gases generated during semiconductor engineering and moving towards a vacuum pump. The device prevents by-products caused by special gases generated during the main semiconductor process from flowing into the vacuum pump, thus avoiding problems related to pump maintenance and equipment operation. This improves the efficiency of pump maintenance and equipment operation and extends the vacuum pump's volume-to-power (V / P) lifespan.

[0051] Figure 2 This is a schematic diagram illustrating a semiconductor engineering waste gas treatment apparatus according to an embodiment of the present invention.

[0052] See Figure 2 The semiconductor engineering waste gas treatment device 100 includes a plasma generation unit 110, a reaction chamber 120, and a gas supply unit 130.

[0053] The plasma generation unit 110 has a positive electrode and a negative electrode, and is capable of generating arc plasma. Furthermore, N2 gas is supplied to the plasma generation unit 110, and nitrogen (N2) plasma can be generated through the arc plasma.

[0054] In the reaction chamber 120, the perfluorinated compound can be decomposed into a decomposition gas by the plasma. That is, perfluorinated compounds and plasma flow into the reaction chamber 120, and the perfluorinated compound is converted into a decomposition gas by the plasma.

[0055] The gas supply unit 130 is capable of supplying decomposition gas from the reaction chamber 120 to the processing chamber 200. Within the gas supply unit 130, the decomposition gas has a uniform concentration. For this purpose, the gas supply unit 130 includes a connecting pipe 131 and a gas injection unit 132.

[0056] The connecting pipe 131 is a double-structured bent pipe component. It is cooled by water in the external space and the decomposition gas is supplied from the reaction chamber 120 to the connecting pipe 131 in the internal space. The connecting pipe 131 is disposed between the reaction chamber 120 and the gas injection section 132, and cools the decomposition gas from the reaction chamber 120 before supplying it to the gas injection section 132.

[0057] The gas injection section 132 has an outer tube section 1321 and a differential pressure centering section 1322. One side of the outer tube section 1321 is connected to the connecting pipe 131, and the differential pressure centering section 1322 is attached to the other side. The differential pressure centering section 1322 is disposed inside the outer tube section 1321 and has a shape that protrudes towards the connecting pipe 131. Inside the gas injection section 312, the decomposed gas is discharged to the outside with a uniform concentration through a vortex.

[0058] Figure 3 This is a schematic diagram illustrating the operation of a semiconductor engineering waste gas treatment apparatus between a semiconductor device and a vacuum pump according to an embodiment of the present invention.

[0059] See Figure 3 Waste gas from the semiconductor engineering process flows into the processing chamber 200, and decomposition gas supplied from the semiconductor engineering waste gas treatment device 100 also flows into the processing chamber 200. Waste gas, treated by the reaction of the waste gas and the decomposition gas, is generated within the processing chamber 200. The treated waste gas is then discharged to a vacuum pump.

[0060] The decomposition gas supplied from the gas supply unit 130 to the processing chamber can react with the exhaust gas in the processing chamber to suppress the formation of solid-state salts or remove the generated solid-state salts.

[0061] Figure 4 This is a schematic diagram illustrating the manner in which a semiconductor engineering waste gas treatment device is connected to a semiconductor engineering waste gas vacuum pump according to an embodiment of the present invention.

[0062] See Figure 4 Nitrogen gas is supplied to the plasma generation unit, and cooling water is also supplied to the plasma generation unit. Furthermore, NF3 gas, an example of a perfluorinated compound, is supplied to the reaction chamber, and cooling water is also supplied to the reaction chamber. The cooling water is also supplied to the gas supply unit, and the supplied cooling water fills the external space of the connecting pipe, which is a double-structured bent pipe component, for cooling the decomposition gas.

[0063] Figure 5 This illustrates the present invention. Figure 2 A cross-sectional view of the plasma generation section.

[0064] See Figure 5 The plasma generation unit 110 is capable of generating N2 plasma via electric arc plasma. The plasma generation unit 110 may include an electrode cooling PCW unit 111, a negative electrode 112, a positive electrode 113, an N2 supply unit 114, a plasma circular tube 115, and a cooling PCW unit 116. PCW is an abbreviation for process cooling water, referring to cooling operations performed using water. However, the cooling operation is not limited to water; any liquid capable of cooling is acceptable.

[0065] When N2 gas flows in through the N2 supply section 114, N2 plasma is generated between the negative electrode 112 and the positive electrode 113 through arc discharge. The generated N2 plasma is discharged through the plasma circular tube 115. The electrode cooling PCW section 111 prevents the negative electrode 112 or the positive electrode 113 from overheating and performs cooling operation. Furthermore, the cooling PCW section 116 prevents the high temperature heat from the plasma generation section 110 from being transferred to the reaction chamber 120, thus hindering the gas decomposition process.

[0066] Figure 6 This illustrates the invention. Figure 2 A cross-sectional view of the reaction chamber.

[0067] See Figure 6 The reaction chamber has a perfluorinated compound inlet 121 and an internal chamber 122. Gas-phase perfluorinated compounds are supplied through the perfluorinated compound inlet 121 to flow into the internal chamber 122. NF3 gas, as an example of the perfluorinated compound supplied to the internal chamber 122 of the reaction chamber 120, can be decomposed by N2 plasma to generate N2, NF3, or F... - The decomposition of NF3 gas. That is, F radicals can be generated through plasma decomposition of NF3 gas.

[0068] The NF3 gas is not directly injected into the torch of the plasma generation section, but flows into the reaction chamber 120 located at the bottom. That is, the NF3 gas is not supplied between the positive and negative electrodes that generate the arc plasma, but is supplied to the reaction chamber 120, thereby improving the lifespan of the positive and negative electrodes of the plasma generation section.

[0069] The reaction chamber 120 has a dual-structure chamber for maintaining the plasma flame at near-atmospheric pressure, thereby ensuring plasma density.

[0070] As described above, the generated decomposition gas is supplied to the processing chamber and reacts with the NH3 in the waste gas or the generated NH4Cl to generate gaseous NH4F, thus suppressing the generation of solid NH4Cl.

[0071] Figure 7 This is a schematic diagram illustrating the connecting pipes of the gas supply section of the semiconductor engineering waste gas treatment device.

[0072] Figure 8 This is a schematic diagram illustrating the gas injection section of the gas supply unit in a semiconductor engineering waste gas treatment apparatus.

[0073] Figure 9 This is a schematic diagram illustrating the process of reducing salt powder in a semiconductor engineering waste gas treatment apparatus according to an embodiment of the present invention.

[0074] The gas supply unit 130 may include a connecting pipe 131 and a gas injection unit 132.

[0075] See Figure 7 One end of the connecting pipe 131 is connected to the reaction chamber 120, and the other end is connected to the gas supply unit. The decomposition gas from the reaction chamber 120 can move through the connecting pipe 131. For example, the connecting pipe 131 can be a double-structure bent pipe component. The double-structure bent pipe component can have a PCW supply structure, thus allowing the temperature of the decomposition gas inside the connecting pipe to be adjusted through the internal pipe cooling effect. That is, in the double structure, the outer space is filled with cooling water, and the decomposition gas is supplied to the inner space. The temperature-regulated decomposition gas flows into the gas injection unit.

[0076] See Figure 8 The gas injection unit 132 can be disposed between the connecting pipe 131 and the processing chamber. The gas injection unit 132 is capable of injecting decomposition gas from the connecting pipe 131 into the processing chamber.

[0077] As an example, the gas injection section 132 may include an outer tube section 1321 connected at one end to the connecting pipe 131 and a pressure differential centering section 1322. The gas injection section 132 may be a connecting centering section that disperses the pressure inside the connecting pipe 131.

[0078] The outer tube portion 1321 may be a tubular connector that connects the connecting tube 131 and the processing chamber. The outer tube portion 1321 may have a shape in which the diameter decreases as it approaches the differential pressure centering portion 1322. One side of the outer tube portion 1321 is connected to the connecting tube, and the other side is connected to the differential pressure centering portion 1322.

[0079] The differential pressure centering part 1322 can be disposed inside the outer tube 1321, spaced apart from the inner surface of the outer tube 1321. The differential pressure centering part 1322 has a tube-shaped structure with a diameter smaller than that of the outer tube 1321 and a shape that protrudes towards the connecting tube 131. The differential pressure centering part 1322 can inject decomposed gas into the processing chamber through the pressure difference between the connecting tube 131 and the processing chamber. For example, the pressure of the connecting tube 131 can be 10... -1 Torr, the pressure in the processing chamber is 10. -3 Torr. Due to the structural characteristics of the differential pressure centering section, fluid eddies and fluid pressure rise in this area. Therefore, the hydraulic pressure in the inner region of the outer tube where the differential pressure centering section is located is higher than the pressure at the outlet from the differential pressure centering section. Consequently, the decomposed gas at the differential pressure centering section can flow into the processing chamber through the pressure difference.

[0080] A vortex can occur due to the space between the outer surface of the pressure differential centering section 1322 and the inner surface of the outer tube. A vortex is a phenomenon where a portion of a fluid is disturbed and flows in the opposite direction to its main flow. The decomposed gas flowing in from the connecting pipe 131 has its main flow from the connecting pipe toward the pressure differential centering section 1322. A vortex is formed in the space between the outer surface of the pressure differential centering section 1322 and the outer tube section 1321, flowing in the opposite direction to its main flow. The radius of the outer tube section 1321 gradually decreases with distance from the connecting pipe 131, therefore, the closer to the... Figure 3 The higher the pressure in the processing chamber, the greater the velocity of the eddy current compared to the velocity of the main flow, resulting in a more uniform concentration of decomposed gas within the gas injection section. This improves the uniformity of the decomposed gas flowing from the connecting pipe 131 into the gas injection section 132, allowing it to flow into the inlet of the pressure differential centering section. Consequently, decomposed gas with further improved uniformity can be supplied to the processing chamber.

[0081] Ammonium can be formed as shown in the following reaction formula 1 due to semiconductor engineering.

[0082] [Reaction Formula 1]

[0083] 6TiCl4+20NH3→6TiN+N2+12HCl+12NH4Cl

[0084] As mentioned above, this ammonium chloride can undergo a phase transition from a gaseous phase to a solid phase depending on temperature and pressure conditions. If the resulting solid salt flows into the vacuum pump, it can cause vacuum pump malfunctions, project interruptions, and other significant disruptions to normal operation.

[0085] The semiconductor engineering waste gas treatment apparatus according to this embodiment can prevent problems such as vacuum pump failure by vaporizing the solid-phase salt generated from the waste gas from semiconductor engineering before it is discharged to the vacuum pump.

[0086] Specifically, as shown in reaction formulas 2 and 3 below, the formation of solid ammonium chloride salts can be suppressed in the processing chamber.

[0087] [Reaction 2]

[0088] Ticl4+4NH3+3F→TiN+3NH4F+2Cl2

[0089] [Reaction 3]

[0090] 8NH4Cl + 6F → 6NH4F + 8HCl + N2

[0091] The decomposition gases formed by N2 plasma may include N2, NF3, or F. -The high-energy components of this decomposition gas react with the ammonia in the waste gas to inhibit the formation of ammonium chloride, and react with the already formed ammonium chloride to decompose it, thereby inhibiting the formation of solid-phase ammonium chloride salts.

[0092] Figure 10 This is a schematic diagram illustrating the test results of the NF3 gas decomposition efficiency of a semiconductor engineering waste gas treatment device according to an embodiment of the present invention.

[0093] Figure 11 To illustrate an embodiment of the present invention, the following is provided: Figure 10 The table shows the test conditions.

[0094] Figure 11 The conditions for the project, such as the N2 plasma supply, are shown.

[0095] See Figure 10 and Figure 11 N2 plasma is generated according to the current and voltage conditions set in the table. The amount of N2 plasma flowing into the plasma generation unit is as follows: Figure 11 The table shows the results. Furthermore, NF3, a perfluorinated compound, was supplied to the reaction chamber at a flow rate of 3 L / m. The amount of NF3 gas was measured at the downstream end of the vacuum pump under conditions where no exhaust gas was supplied. A large amount of NF3 gas was detected when the plasma was turned off, while NF3 decreased when N2 plasma was supplied at 6 L / m, indicating that decomposition was in progress. Subsequently, with increased N2 plasma supply, the amount of NF3 detected was extremely small or undetectable, thus confirming that the decomposition was proceeding smoothly.

[0096] As described above, the composition and quantity of the decomposition gas can be adjusted by regulating the N2 plasma supply. That is, the composition and quantity of N2, NF3, or F contained in the decomposition gas can be adjusted. - Element.

[0097] The semiconductor engineering waste gas treatment apparatus of this embodiment may further include a control unit that adjusts the composition and supply of the decomposition gas by adjusting the supply of N2 plasma and NF3.

[0098] Figure 12 This is a schematic diagram illustrating the results of testing the binding reaction of ammonia in the treatment chamber according to an embodiment of the present invention.

[0099] Figure 13 To illustrate an embodiment of the present invention, the following is provided: Figure 12 The table shows the test conditions.

[0100] See Figure 12 and Figure 13 NH3 gas is supplied to the engineering chamber, such as Figure 12The N2 gas shown is supplied to the plasma generation unit. NF3 gas is also supplied to the reaction chamber at a flow rate of 3 L / min. The flow rate of N2 discharged via a vacuum pump is 20 L / min. The current and voltage conditions represent the power used to generate N2 plasma in the plasma generation unit. Figure 12 The graph shows the concentrations of NF3 and NH3, which were measured from the gas discharged through a vacuum pump.

[0101] Ammonia flowed into the engineering chamber after 30 seconds of performance testing. At 1 minute and 30 seconds, the NH3 supply was stopped, and NF3 gas was supplied to the N2 plasma. Then, from approximately 3 minutes and 30 seconds, the NH3 gas supply resumed, with the N2 plasma being repeatedly switched on and off at intervals. Through this repeated switching of the N2 plasma, the processing gas was uniformly distributed in the reaction chamber, gas supply section, and processing chamber, ensuring that all components could function normally.

[0102] At approximately 8 minutes and 45 seconds, with the N2 plasma activated, the NH3 gas supplied to the processing chamber began to decompose, and its concentration decreased sharply. Then, at 10 minutes and 20 seconds, the N2 plasma was shut off, interrupting the NH3 gas supply. Because the N2 plasma was shut off, the decomposition gas produced during NF3 decomposition was not generated, and the supplied NF3 was discharged through a vacuum pump, increasing the amount of discharged NF3. Furthermore, since the NH3 gas supply was also interrupted, the NH3 discharged through the vacuum pump was not detectable.

[0103] Finally, after 11 minutes and 35 seconds, with the N2 plasma activated, the NF3 gas decomposed into a decomposition gas via plasma. Therefore, the amount of NF3 in the vacuum pump decreased dramatically.

[0104] That is, it can be confirmed that the components of the decomposition gas generated when the plasma is turned on react well with the ammonia in the waste gas, and the decomposition gas can be adjusted to be supplied only with N2 or supplied with NF3 along with N2 plasma to induce the reaction between the decomposition gas and ammonia.

[0105] This allows the formation of ammonium chloride to be suppressed or the generated ammonium chloride to decompose into NH4F gas.

[0106] Figure 14 This is a table used to illustrate the performance of a semiconductor engineering waste gas treatment device according to an embodiment of the present invention.

[0107] See Figure 14 It is evident that the semiconductor engineering waste gas treatment device according to the present invention has superior and significant effects compared to existing methods.

[0108] Existing technologies employ indirect, non-contact decomposition of NF3 gas using microwaves or ICP, which leads to increased energy consumption. In contrast, this invention utilizes direct arc discharge to generate plasma from N2 gas, allowing the NF3 gas to directly contact the generated plasma for direct decomposition. Therefore, it can generate high-density plasma with low energy consumption, producing a large quantity of decomposition gas.

[0109] That is, by suppressing the formation of ammonium chloride through gas decomposition as described above, the number of vacuum pump failures and downtime losses are reduced, thereby improving productivity. Furthermore, it can extend the PM cycle time.

[0110] Furthermore, the structure of the outer pipe section 1321 and the differential pressure centering section in the gas supply section 130 enables the decomposition gas to be supplied with more uniform composition.

[0111] Furthermore, the semiconductor engineering waste gas treatment device according to this application can overcome the capacity limitations of existing Micro Wave, ICP, and RF methods. That is, existing technologies suffer from increased capacity, energy consumption, and operating costs due to the recent increase in gas usage in nanoengineering. However, the semiconductor engineering waste gas treatment device according to this application can easily handle increased engineering gas usage by readily adjusting the supply of decomposition gases.

[0112] Furthermore, instead of directly injecting NF3 into the electrodes of the plasma generation unit 110, NF3 is supplied to the reaction chamber 120, and decomposition gas is generated by N2 plasma decomposing NF3. This solves the problem of shortened electrode life in the plasma generation unit and extends the electrode life of the plasma generation unit 110. Of course, highly corrosion-resistant materials can be used in the reaction chamber and other reaction parts.

[0113] The above description of the present invention is for illustrative purposes, and those skilled in the art will understand that other specific embodiments can be readily modified without changing the technical concept or essential features of the invention. Therefore, it should be understood that the embodiments described above are for comprehensive illustration and not for limitation. For example, the constituent elements described as a single type may also be implemented separately, and similarly, the constituent elements described separately may be implemented in combination.

[0114] The scope of this invention is shown in the appended claims and should be interpreted as including all modifications or variations derived from the meaning, scope, and equivalent concepts of the claims.

Claims

1. A semiconductor engineering waste gas treatment device, characterized in that it treats waste gas generated from semiconductor engineering and moving towards a vacuum pump, wherein... include: Plasma generation unit, which generates plasma; A reaction chamber in which perfluorinated compounds are decomposed by the plasma to generate decomposition gases; as well as The gas supply unit supplies the decomposition gas from the reaction chamber to the waste gas inflow from the semiconductor process and discharges the treated waste gas to the processing chamber of the vacuum pump. In this process, the decomposition gas reacts with the waste gas within the treatment chamber to inhibit the formation of solid-state salts from the components of the waste gas. The plasma generation unit generates N2 plasma through an electric arc plasma. The perfluorinated compound NF3 supplied to the reaction chamber is decomposed by the N2 plasma to generate N2, NF3, or F. - The decomposition gas, The decomposition gas supplied to the processing chamber reacts with NH3 in the waste gas or the generated NH4Cl to generate gaseous NH4F, thereby suppressing the formation of solid NH4Cl.

2. The semiconductor engineering waste gas treatment device according to claim 1, characterized in that, The gas supply unit includes: A connecting pipe for the movement of decomposition gases from the reaction chamber; and A gas injection unit is disposed between the connecting pipe and the processing chamber to inject the decomposed gas into the processing chamber.

3. The semiconductor engineering waste gas treatment device according to claim 2, characterized in that, The gas injection unit includes: The outer tube, one end of which is connected to the connecting tube; and A differential pressure centering section, which connects to the other end of the outer tube and is disposed inside the outer tube at a distance from the inner side of the outer tube, injects the decomposed gas into the processing chamber through the pressure difference between the connecting pipe and the processing chamber.

4. The semiconductor engineering waste gas treatment device according to claim 3, characterized in that: The eddy current generated by the space between the differential pressure centering section and the inner surface of the outer tube improves the uniformity of the decomposed gas and flows into the differential pressure centering section.

5. The semiconductor engineering waste gas treatment device according to claim 2, characterized in that: The NF3 gas is supplied to the reaction chamber instead of between the positive and negative electrodes that generate the arc plasma, in order to improve the lifetime of the positive and negative electrodes.

6. The semiconductor engineering waste gas treatment device according to claim 1, characterized in that: The waste gas forms ammonium chloride through reaction formula 1, and the formation of solid-phase ammonium chloride salt is suppressed within the treatment chamber through reactions formulas 2 and 3. [Reaction Formula 1] [Reaction 2] [Reaction 3] 。 7. The semiconductor engineering waste gas treatment device according to claim 1, characterized in that, Also includes: The control unit regulates the composition and supply of the decomposition gas by adjusting the supply of the N2 plasma and the supply of the NF3.

Images