Polishing apparatus monitoring device and polishing apparatus

CN115990835BActive Publication Date: 2026-09-22ZING SEMICON CORP
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Patent Information

Application Number
CN202111221682.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-10-20
Publication Date
2026-09-22
Estimated Expiration
2041-10-20

AI Technical Summary

Technical Problem

在上述双面抛光工艺中,持续的旋转、挤压及研磨使得双面抛光设备的抛光垫及锭盘面(上下锭盘的盘面)发生偏差,导致抛光效果不佳

Benefits of technology

[0015]综上所述,本发明提供的双面抛光设备监测装置及双面抛光设备具有如下有益效果:利用设于第一锭盘的激光发射单元及设于第二锭盘的激光接收单元监测第一锭盘及第二锭盘之间距离数据,并利用设于第一锭盘或第二锭盘的压力传感单元监测第一锭盘及第二锭盘的加压状态的压力数据,从而及时准确的监测双面抛光设备的上下锭盘的形貌。

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Abstract

The application provides a double-sided polishing equipment monitoring device and double-sided polishing equipment, the double-sided polishing equipment monitoring device comprises a laser emitting unit, a laser receiving unit, a pressure sensing unit, a processing unit and a display unit; the laser emitting unit is arranged in a first chuck for emitting a laser line to a second chuck; the laser receiving unit is arranged in the second chuck and corresponds to the laser emitting unit, for detecting distance data of the first chuck and the second chuck; the pressure sensing unit is arranged in the first chuck or the second chuck, for detecting pressure data between the first chuck and the second chuck. The application monitors the distance data between the first chuck and the second chuck by the laser emitting unit and the laser receiving unit, and monitors the pressure data of the first chuck and the second chuck by the pressure sensing unit, so as to timely and accurately monitor the topography of the first chuck and the second chuck of the double-sided polishing equipment.
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Description

Technical Field

[0001] This invention relates to the field of semiconductors, and in particular to a polishing equipment monitoring device and a polishing equipment. Background Technology

[0002] The manufacturing process of silicon wafers mainly includes the single-crystal pulling process for making crystal rods and the processing process of the crystal rods. The crystal rod processing process generally includes slicing, lapping, chamfering, etching, polishing, and cleaning processes, through which silicon wafers with mirror-finished surfaces are obtained.

[0003] In the polishing process, a double-sided polishing process is required for silicon wafers. This process involves chemical mechanical polishing (CMP) through the relative rotation and sliding of the silicon wafer against the upper and lower polishing pads of the double-sided polishing equipment. Common double-sided polishing equipment typically includes an upper and lower ingot tray, an upper polishing pad, a lower polishing pad, a carrier, and an insert. The upper and lower polishing pads are respectively positioned on their respective upper and lower ingot trays, while the carrier and insert are positioned between them to fix the silicon wafer and allow it to rotate planetarily around a center. In this double-sided polishing process, continuous rotation, pressure, and grinding cause deviations between the polishing pads and the ingot tray surfaces (the surfaces of the upper and lower ingot trays), resulting in poor polishing performance. However, existing inspection devices primarily detect the morphology of the polishing pads and do not have dedicated monitoring devices for deviations on the ingot tray surface. They rely solely on external inspection devices, which are inconvenient to operate and ineffective. Summary of the Invention

[0004] The purpose of this invention is to provide a monitoring device and a double-sided polishing equipment for timely and accurate monitoring of the morphology of the first and second discs of the double-sided polishing equipment.

[0005] To address the aforementioned technical problems, this invention provides a monitoring device for a double-sided polishing equipment. The double-sided polishing equipment includes a first and a second ingot disk arranged opposite to each other. The first and second ingot disks have the same center of rotation and each includes a polishing disk. The monitoring device includes a laser emitting unit, a laser receiving unit, a pressure sensing unit, a processing unit, and a display unit. The laser emitting unit is disposed within the first ingot disk and surrounds the center of rotation. The laser receiving unit is disposed within the second ingot disk and corresponds to the laser emitting unit. The laser emitting unit emits a laser line towards the polishing disk of the second ingot disk. The laser receiving unit receives the laser line to detect the distance data between the first and second ingot disks. The pressure sensing unit is disposed within the first and / or second ingot disks and detects the pressure data of the first and second ingot disks. The processing unit obtains the morphology data of the polishing disk based on the distance data and the pressure data. The display unit displays the morphology data of the polishing disk.

[0006] Optionally, the polishing disk of the first ingot disk includes at least two first openings arranged around the rotation center, the first openings facing the polishing disk of the second ingot disk, and the laser emitting unit includes a plurality of laser emitters, one of which is disposed in each of the first openings.

[0007] Optionally, the polishing disk of the first ingot disk includes at least two sets of first openings, the at least two sets of first openings surrounding the rotation center with different radii, and the laser emitting unit includes a plurality of laser emitters horizontally disposed within the openings.

[0008] Optionally, the first openings are arranged in a circle.

[0009] Optionally, the first openings are arranged in at least two concentric circles, and the at least two concentric circles of first openings are radially offset from each other on the polishing disk of the first ingot.

[0010] Optionally, the polishing disc of the second ingot disc is provided with at least one second opening, the second opening facing the polishing disc of the first ingot disc, and the laser receiving unit includes at least one laser receiver disposed within the second opening.

[0011] Optionally, the second opening extends along the radial direction of the polishing disk of the second ingot disk.

[0012] Optionally, the pressure sensing unit is a planar pressure pad.

[0013] Optionally, the processing unit and the display unit may also use the morphology data to present a morphology image of the polishing disc.

[0014] According to another aspect of the present invention, the present invention also provides a double-sided polishing device, including a first spindle and a second spindle, and further including a double-sided polishing device monitoring device as described above, wherein the double-sided polishing device monitoring device is used to monitor the morphology of the first spindle and the second spindle of the double-sided polishing device.

[0015] In summary, the double-sided polishing equipment monitoring device and double-sided polishing equipment provided by the present invention have the following beneficial effects: the distance data between the first and second spindles is monitored by a laser emitting unit located on the first spindle and a laser receiving unit located on the second spindle, and the pressure data of the pressurized state of the first and second spindles is monitored by a pressure sensing unit located on the first or second spindle, thereby timely and accurately monitoring the morphology of the upper and lower spindles of the double-sided polishing equipment. Attached Figure Description

[0016] Those skilled in the art will understand that the accompanying drawings are provided to better understand the invention and do not constitute any limitation on the scope of the invention. Wherein:

[0017] Figure 1 This is a cross-sectional schematic diagram of a monitoring device for a double-sided polishing equipment provided in an embodiment of this application;

[0018] Figure 2 This is a top view schematic diagram of a first polishing disc provided in an embodiment of this application;

[0019] Figure 3 This is a top view schematic diagram of another first polishing disc provided in an embodiment of this application;

[0020] Figure 4 This is a top view schematic diagram of the second polishing disc provided in an embodiment of this application;

[0021] Figure 5 This is a cross-sectional schematic diagram of another double-sided polishing equipment monitoring device provided in the embodiments of this application.

[0022] In the attached image:

[0023] 10-First ingot disc; 11-First polishing disc; 12-First connecting disc; 12a-Vertical part; 12b-Horizontal part; 111-First opening;

[0024] 20 - Second ingot disc; 21 - Second polishing disc; 22 - Second connecting disc; 211 - Second opening;

[0025] 31-Polishing pad; 32-Laser emitting unit; 33-Laser receiving unit; 34-Pressure sensing unit;

[0026] 41-Processing unit; 42-Display unit;

[0027] 50 - Center of rotation. Detailed Implementation

[0028] To make the objectives, advantages, and features of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to facilitate and clarify the explanation of the embodiments of this invention. Furthermore, the structures shown in the drawings are often part of the actual structures. In particular, different figures may emphasize different aspects and may sometimes use different scales.

[0029] It should be understood that when an element or layer is referred to as "on" or "connected to" other elements or layers, it may be directly on or connected to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on" or "directly connected to" other elements or layers, there are no intervening elements or layers. Although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this invention, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion. Spatial relation terms such as "below," "under," "below," "above," "on top," "above," etc., may be used herein for convenience of description to describe the relationship between one element or feature shown in the figures and other elements or features. It should be understood that, in addition to the orientations shown in the figures, spatial relational terms are intended to also include different orientations of the devices in use and operation. For example, if the devices in the figures are flipped, then elements or features described as “below,” “under,” or “below” will be oriented “on” other elements or features. Devices may be oriented additionally (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly. The terminology used herein is intended only to describe particular embodiments and is not intended to limit the invention. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “comprising” is used to identify the presence of features, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, steps, operations, elements, components, and / or groups. When used herein, the terms “and / or” include any and all combinations of the associated listed items.

[0030] This invention provides a monitoring device and a double-sided polishing equipment for timely and accurate monitoring of the morphology of the upper and lower spindles of the double-sided polishing equipment.

[0031] Figure 1 This is a cross-sectional schematic diagram of the monitoring device for double-sided polishing equipment provided in the embodiments of this application.

[0032] like Figure 1 As shown, the double-sided polishing equipment includes a first ingot disk 10 and a second ingot disk 20 arranged horizontally opposite each other. The first ingot disk 10 and the second ingot disk 20 can rotate relative to each other around the same rotation center 50. Several silicon wafers can be arranged between the first ingot disk 10 and the second ingot disk 20 using a carrier (not shown in the figure, such as a basket and liner) and can rotate planetarily around the rotation center 50. The first ingot disk 10 and the second ingot disk 20 each include a corresponding connecting disk (first connecting disk 12, second connecting disk 22) and a polishing disk (first polishing disk 11, second polishing disk 21). The connecting disk connects the polishing disk and the driving mechanism for driving the polishing disk to rotate. The polishing disk is fixedly connected to the connecting disk. The surface of the polishing disk is provided with a corresponding polishing pad 31 for contacting the silicon wafer to polish the surface of the silicon wafer.

[0033] Please continue to refer to Figure 1 The double-sided polishing equipment monitoring device provided in this application embodiment is used to monitor the morphological data of the first ingot 10 and the second ingot 20 of the double-sided polishing equipment. It includes a laser emitting unit 32, a laser receiving unit 33, a pressure sensing unit 34, a processing unit 41, and a display unit 42. The laser emitting unit 32 is disposed within the first ingot 10 and surrounds the rotation center 50. The laser receiving unit 33 is disposed within the second ingot 20 and corresponds to the laser emitting unit 32. The laser emitting unit 32 emits laser lines to the polishing disk 21 of the second ingot 20, and the laser receiving unit 33 receives the laser lines to detect the distance data between the first ingot 10 and the second ingot 20. The pressure sensing unit 34 is disposed in the first ingot 10 and / or the second ingot 20 and is used to detect the pressure data between the first ingot 10 and the second ingot 20. The processing unit 41 obtains the morphological data of the polishing disk based on the distance data and the pressure data; the display unit displays the morphological data of the polishing disk.

[0034] The first ingot disk 10 can be the upper ingot disk of the double-sided polishing equipment, and the second ingot disk 20 can be the lower ingot disk of the double-sided polishing equipment. The pressure sensing unit 34 can be set on the upper ingot disk of the double-sided polishing equipment to facilitate the setting of the laser emitting unit 32 and the laser receiving unit 33. In practice, the lower ingot disk of the double-sided polishing equipment is also equipped with a carrier drive device for driving the carrier to rotate. This drive structure will occupy a certain amount of space, resulting in a smaller installation space for the lower ingot disk.

[0035] Please refer to Figure 2The first polishing disk 11 of the first ingot disk 10 has six (a group of) first openings 111 surrounding the rotation center 50. The laser emitting unit 32 includes several laser emitters, each laser emitter disposed in one of the first openings 111, for emitting laser lines to the second ingot disk 20. The six first openings 111 are evenly arranged circumferentially relative to the rotation center and are arranged in a circle. Preferably, all laser emitters of the first ingot disk 10 are disposed on the same horizontal plane, and this horizontal plane is parallel to the surface of the polishing disk, so as to facilitate subsequent calculation of the distance data between the two. It should be understood that the number of first openings 111 (laser emitters) in the first ingot disk 10 can also be two or more.

[0036] Please refer to Figure 3 In another specific embodiment, a plurality of laser emitters (first openings 111) within the first polishing disk 11 of the first ingot disk 10 are uniformly arranged in two concentric circles (two groups) to emit laser lines to the second ingot disk 20. These two groups of laser emitters with different radii are used to monitor the distance data of the positions, thereby obtaining more morphological data for the first ingot disk 10 and the second ingot disk 20. Preferably, the two groups of first openings 111 with different radii can be staggered circumferentially to obtain more morphological data. Of course, the number of concentric circles of the laser emitters (first openings 111) within the first ingot disk 10 can also be greater than two, and each circle (each group) includes at least two laser emitters.

[0037] Please refer to Figure 4 The second polishing pad 21 of the second polishing pad 20 is provided with a second opening 211 extending radially along the second polishing pad 21. A laser receiving unit 33 is disposed within the second opening 211 for receiving laser lines emitted by the laser emitter. The radial length of the second opening 211 can cover the radius range of all the first openings 111. The laser receiving unit 33 can be a strip-shaped laser receiver. It receives the laser lines emitted by the laser receivers within the first opening 111 and obtains the distance data between the laser receivers. The parallelism (levelness) data of the first polishing pad 10 and the second polishing pad 20 is determined using the distance data. It should be understood that the laser lines emitted by the laser emitter (e.g., infrared laser lines) can penetrate both polishing pads and be received by the laser receiving unit. In practice, the parallelism of the second ingot disk 20 (lower ingot disk) is usually used as a horizontal reference to monitor the overall or partial parallelism of the first ingot disk 10 (upper ingot disk). This is because the first ingot disk 10 needs to perform actions such as lifting and lowering to load and unload silicon wafers, which makes the first ingot disk 10 (upper ingot disk) more prone to deformation or tilting, thus affecting the polishing effect.

[0038] Please continue to refer to Figure 1The pressure sensing unit 34 is disposed between the first polishing disk 11 and the first connecting disk 12 of the first ingot disk 10 (upper ingot disk), and is in close contact with the first polishing disk 11 and the first connecting disk 12. It is used to detect the pressure data of the first ingot disk 10 and the second ingot disk 20 to obtain morphological data between the first polishing disk 11 and the first connecting disk 12. The pressure sensing unit 34 can be, for example, a planar pressure pad. The shape of the pressure pad can be, for example, circular, and its radius can be slightly smaller than the radius of the first polishing disk 11 and the first connecting disk 12, but the pressure pad must cover the polishing area of ​​the silicon wafer. The pressure sensing unit 34 includes multiple uniformly distributed pressure testing structures to obtain pressure data from different areas. Of course, depending on actual needs, the pressure sensing unit 34 can also be disposed between the connecting disk and the polishing disk of the second ingot disk 20, or even both the first ingot disk 10 and the second ingot disk 20 can be equipped with pressure sensing units 34.

[0039] Please continue to refer to Figure 1 The processing unit 41 is signal-connected to the laser emitting unit 32, the laser receiving unit 33, and the pressure sensing unit 34, and is used to obtain the morphology data of the polishing disk based on distance and pressure data. The display unit 42 is signal-connected to the processing unit 41 and is used to display the morphology data of the polishing disk. Preferably, the processing unit 41 can also fit the morphology data of the polishing disk into a corresponding morphology image and present it intuitively using the display unit 42.

[0040] Please refer to Figure 5 In the second type of double-sided polishing equipment monitoring device provided in this embodiment, only the positions of the laser emitting unit 32 and the laser receiving unit 33 are different. Specifically, the first connecting plate 12 includes a horizontal part 12b and a vertical part 12a, such that the vertical part 12a partially surrounds the polishing plate (e.g., the first polishing plate 11). The laser emitting unit 32 can be disposed in the first opening 111 located on the vertical part 12a. The laser receiving unit 33 is disposed in the vertical part of the second connecting plate 22 and corresponds to the laser emitting unit 32, for receiving the laser line emitted by the laser emitting unit 32.

[0041] In this embodiment, the monitoring method of the double-sided polishing equipment monitoring device may include, for example:

[0042] In the unloaded (without silicon wafers) state of the double-sided polishing equipment, the first ingot disk 10 is brought close to the second ingot disk 20 to a commonly used polishing position (without compression) to simulate the real polishing state as much as possible. Then, the first ingot disk 10 or the second ingot disk 20 is rotated at low speed. The laser line of the laser emitting unit 32 on the first ingot disk 10 is collected by the laser receiving unit 33 provided on the second ingot disk 20 to obtain the circumferential distance data between the polishing disks of the first ingot disk 10 and the second ingot disk 20, thereby analyzing the basic morphological state of the polishing disks of the first ingot disk 10 and the second ingot disk 20.

[0043] With the silicon wafer loaded in the double-sided polishing equipment, the first ingot disk 10 and the second ingot disk 20 are pressed into contact with each other and the pressure is the same as the commonly used polishing pressure, so as to detect the pressure data in the static state. By analyzing the distribution and uniformity of the pressure data, the morphology of the polishing disks of the first ingot disk 10 and the second ingot disk 20 can be obtained.

[0044] Alternatively, under normal polishing conditions of the double-sided polishing equipment, pressure data of the first disc 10 and the second disc 20 can be acquired at a certain monitoring frequency to analyze and judge the morphology of the polishing discs in real time.

[0045] This invention also provides a double-sided polishing device, which includes a first spindle, a second spindle, and a monitoring device. The double-sided polishing device uses the monitoring device to monitor the morphology of the first and second spindles.

[0046] In summary, the double-sided polishing equipment monitoring device and double-sided polishing equipment provided by the present invention have the following beneficial effects: the distance data between the first and second spindles is monitored by using a laser emitting unit located on the first spindle and a laser receiving unit located on the second spindle, and the pressure data of the first and second spindles is monitored by using a pressure sensing unit located on the first and / or second spindles, thereby timely and accurately monitoring the morphology of the upper and lower spindles of the double-sided polishing equipment.

[0047] The above description is merely a description of preferred embodiments of the present invention and is not intended to limit the scope of the present invention in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the protection scope of the claims.

Claims

1. A monitoring device for a double-sided polishing equipment, the double-sided polishing equipment comprising a first disc and a second disc arranged opposite to each other, the first disc and the second disc having the same center of rotation and each including a polishing disc, characterized in that, The monitoring device for the double-sided polishing equipment includes a laser emitting unit, a laser receiving unit, a pressure sensing unit, a processing unit, and a display unit; The laser emitting unit is disposed inside the first ingot disk and surrounds the rotation center, and the laser receiving unit is disposed inside the second ingot disk and corresponds to the laser emitting unit. The laser emitting unit is used to emit laser lines to the polishing disk of the second ingot disk, and the laser receiving unit is used to receive the laser lines to detect the distance data between the first ingot disk and the second ingot disk. The pressure sensing unit is disposed in the first spindle and / or the second spindle, and the pressure sensing unit is a surface-shaped pressure pad used to detect the pressure data of the first spindle and the second spindle. The processing unit is used to obtain the morphology data of the polishing disc based on the distance data and the pressure data; The display unit is used to display the morphological data of the polishing disc.

2. The monitoring device for double-sided polishing equipment as described in claim 1, characterized in that, The polishing disk of the first ingot includes at least two first openings arranged around the rotation center, the first openings facing the polishing disk of the second ingot, and the laser emitting unit includes a plurality of laser emitters, one of which is disposed in each of the first openings.

3. The monitoring device for double-sided polishing equipment as described in claim 2, characterized in that, The first opening is arranged in a circle.

4. The monitoring device for double-sided polishing equipment as described in claim 2, characterized in that, The first openings are arranged in at least two concentric circles, and the at least two concentric circles of first openings are radially offset from each other on the polishing disk of the first ingot.

5. The monitoring device for double-sided polishing equipment as described in claim 1, characterized in that, The polishing disc of the second ingot disc has at least one second opening facing the polishing disc of the first ingot disc, and the laser receiving unit includes at least one laser receiver disposed within the second opening.

6. The monitoring device for double-sided polishing equipment as described in claim 5, characterized in that, The second opening extends along the radial direction of the polishing disk of the second ingot disk.

7. The monitoring device for double-sided polishing equipment as described in claim 1, characterized in that, The first ingot disk also includes a connecting disk, and the pressure sensing unit is disposed between the polishing disk and the connecting disk of the first ingot disk.

8. The monitoring device for double-sided polishing equipment as described in claim 1, characterized in that, The processing unit and display unit also utilize the morphology data to present a morphological image of the polishing disc.

9. A double-sided polishing device, comprising a first disc and a second disc, characterized in that, It also includes a double-sided polishing equipment monitoring device as described in any one of claims 1 to 8, which is used to monitor the morphology of the first and second spindles.

Citation Information

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