Substrate processing apparatus

By configuring an adjustment unit in the substrate processing device, the heat loss problem at the nozzle edge and in the slit area of ​​the chamber is solved, and the effective concentration and distribution adjustment of plasma are achieved, thereby improving processing efficiency and cleaning effect.

CN115995376BActive Publication Date: 2025-12-16TES CO LTD
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Patent Information

Application Number
CN202211277942.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2021-10-19
Filing Date
2022-10-19
Publication Date
2025-12-16
Estimated Expiration
2042-10-19

AI Technical Summary

Technical Problem

In substrate processing equipment, heat loss occurs at the edge of the nozzle and in the narrow area of ​​the chamber, and the plasma is difficult to concentrate on the substrate or effectively adjust its distribution, affecting processing efficiency and cleaning effect.

Method used

By configuring an adjustment unit in the substrate processing apparatus, including a conductor section, an RF electrode, and a heater, the temperature and plasma distribution at the electrode edge are adjusted, and a band-stop filter is used to compensate for heat loss, thereby independently adjusting the temperature and RF impedance of multiple separate conductor sections.

Benefits of technology

It improves the efficiency and cleaning effect of substrate processing, shortens the processing time, reduces heat loss and particulate matter adhesion, and achieves effective plasma concentration and direction adjustment.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present invention relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus capable of compensating for heat loss of a first electrode and a chamber interior and further adjusting a plasma distribution in a case where a processing process is performed on a substrate using plasma or a chamber interior is cleaned using plasma.
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Citation Information

Patent Citations

  • PECVD apparatus and process

    CN104737274A

  • Dual zone temperature control of upper electrodes

    US20130126476A1